Search results for: Thin films UV induced deposition

Authors: Smaali Assia, Outemzabet Ratiba, Media El Mahdi, Kadi Mohamed

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Films of pure tin oxide SnO2 and in presence of antimony atoms (SnO2-Sb) deposited onto glass substrates have shown a sufficiently high energy gap to be transparent in the visible region, a high electrical mobility and a carrier concentration which displays a good electrical conductivity [1]. In this work, the effects of polycrystalline silicon substrate on the optical properties of pure and Sb doped tin oxide is investigated. We used the APCVD (atmospheric pressure chemical vapour deposition) technique, which is a low-cost and simple technique, under nitrogen ambient, for growing this material. A series of SnO2 and SnO2-Sb have been deposited onto polycrystalline silicon substrates with different contents of antimony atoms at the same conditions of deposition (substrate temperature, flow oxygen, duration and nitrogen atmosphere of the reactor). The effect of the substrate in terms of morphology and nonlinear optical properties, mainly the reflectance, was studied. The reflectance intensity of the device, compared to the reflectance of tin oxide films deposited directly on glass substrate, is clearly reduced on the overall wavelength range. It is obvious that the roughness of the poly-c silicon plays an important role by improving the reflectance and hence the optical parameters. A clear shift in the minimum of the reflectance upon doping level is observed. This minimum corresponds to strong free carrier absorption, resulting in different plasma frequency. This effect is followed by an increase in the reflectance depending of the antimony doping. Applying the extended Drude theory to the combining optical and electrical obtained results these effects are discussed.

Keywords: Doping, oxide, reflectance.

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Authors: A. U. Moreh, M. Momoh, H. N. Yahya, B. Hamza, I. G. Saidu, S. Abdullahi

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This work studies the effect of thickness on structural and electrical properties of CuAlS2 thin films grown by two stage vacuum thermal evaporation technique. CuAlS2 thin films of thicknesses 50nm, 100nm and 200nm were deposited on suitably cleaned corning 7059 glass substrate at room temperature (RT). In the first stage Cu-Al precursors were grown at room temperature by thermal evaporation and in the second stage Cu-Al precursors were converted to CuAlS2 thin films by sulfurisation under sulfur atmosphere at the temperature of 673K. The structural properties of the films were examined by X-ray diffraction (XRD) technique while electrical properties of the specimens were studied using four point probe method. The XRD studies revealed that the films are of crystalline in nature having tetragonal structure. The variations of the micro-structural parameters, such as crystallite size (D), dislocation density ( ), and micro-strain ( ), with film thickness were investigated. The results showed that the crystallite sizes increase as the thickness of the film increases. The dislocation density and micro-strain decreases as the thickness increases. The resistivity (  ) of CuAlS2 film is found to decrease with increase in film thickness, which is related to the increase of carrier concentration with film thickness. Thus thicker films exhibit the lowest resistivity and high carrier concentration, implying these are the most conductive films. Low electrical resistivity and high carrier concentration are widely used as the essential components in various optoelectronic devices such as light-emitting diode and photovoltaic cells.

Keywords: Crystalline, CuAlS2, evaporation, resistivity, sulfurisation, thickness.

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Authors: Hsin-Ping Huang, Shyankay Jou

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Resistive switching of aluminum nitride (AlN_x) thin film was demonstrated in a TaN/AlN_x/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), R_HRS/R_LRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlN_x/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlN_x film.

Keywords: Aluminum nitride, nonvolatile memory, resistive switching, thin films.

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Authors: M. Gómez-Gómez, M. E. Sánchez-Vergara

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Many sustainable approaches to generate electric energy have emerged in the last few decades; one of them is through solar cells. Yet, this also has the disadvantage of highly polluting inorganic semiconductor manufacturing processes. Therefore, the use of molecular semiconductors must be considered. In this work, allene compounds C24H26O4 and C24H26O5 were used as dopants to manufacture semiconductor films based on PbPc by high-vacuum evaporation technique. IR spectroscopy was carried out to determine the phase and any significant chemical changes which may occur during the thermal evaporation. According to UV-visible spectroscopy and Tauc’s model, the deposition process generated thin films with an activation energy range of 1.47 eV to 1.55 eV for direct transitions and 1.29 eV to 1.33 eV for indirect transitions. These values place the manufactured films within the range of low bandgap semiconductors. The flexible devices were manufactured: polyethylene terephthalate (PET), Indium tin oxide (ITO)/organic semiconductor/Cubic Close Packed (CCP). The characterization of the devices was carried out by evaluating electrical conductivity using the four-probe collinear method. I-V curves were obtained under different lighting conditions at room temperature. OS1 (PbPc/C24H26O4) showed an Ohmic behavior, while OS2 (PbPc/C24H26O5) reached higher current values at lower voltages. The results obtained show that the semiconductor devices doped with allene compounds can be used in the manufacture of optoelectronic devices.

Keywords: Electrical properties, optical gap, phthalocyanine, thin film.

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Authors: Chueh-Jung Huang, Chia-Hung Li, Hsueh-Lung Wang, Tsun-Nan Lin

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Zinc oxide thin films with various microstructures were grown on substrates by using HCOOH-sols. The reaction mechanism of the sol system was investigated by performing an XPS analysis of as-synthesized films, due to the products of hydrolysis and condensation in the sol system contributing to the chemical state of the as-synthesized films. The chemical structures of the assynthesized films related to the microstructures of the final annealed films were also studied. The results of the Zn 2p3/2, C 1s and O1s XPS patterns indicate that the hydrolysis reaction in the sol system is strongly influenced by the HCOOH agent. The results of XRD and FE-SEM demonstrated the microstructures of the annealed films are related to the content of hydrolyzed zinc hydrate (Zn-OH) species present, and that content of the Zn-OH species in the sol system increases the HCOOH adding, and these Zn-OH species existing in the sol phase are responsible for large ZnO crystallites in the final annealed films.

Keywords: zinc oxide, hydrolysis catalyst, zinc acetate source, formic acid.

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Authors: S. Kowsari, M. Aghaziarati

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Pyrite (FeS2) is a promising candidate for cathode materials in batteries because of it`s high theoretical capacity, low cost and non-toxicity. In this study, nano size iron disulfide thin film was prepared on graphite substrate through a new method as battery cathode. In this way, acetylene black and poly vinylidene fluoride were used as electron conductor and binder, respectively. Fabricated thin films were analyzed by XRD and SEM. These results and electrochemical data confirm improvement of battery discharge capacity in comparison with commercial type of pyrite.

Keywords: Nano pyrite, Thin film, Battery cathode, capacity.

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Authors: Lali Kalanadzde

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We investigated magneto-optical Kerr effect in transparent region of implanted ferrite-garnet films for the (YBiCa)3(FeGe)5O12. The implantation process was carried out at room temperature by Ne+ ions with energy of 100 KeV and with various doses (0.5-2.5) 1014 ion/cm². We discovered that slight deviation of the plane of external alternating magnetic field from plane of sample leads to appearance intensive magneto-optical maximum in transparent region of garnet films ħω=0.5-2.0 eV. In the proceeding, we have also found that the deviation of polarization plane from P- component of incident light leads to the appearance of the similar magneto-optical effects in this region. The research of magnetization processes in transparent region of garnet films showed that the formation of magneto-optical effects in region ħω⁼0.5-2.3 eV has a rather complex character.

Keywords: Ferrite-garnet films, ion implantation, magneto-optical, thin films.

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Authors: Sergey M. Karabanov, Dmitry V. Suvorov

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Magnetically controlled microelectromechanical system (MCMEMS) switches is one of the directions in the field of micropower switching technology. MCMEMS switches are a promising alternative to Hall sensors and reed switches. The most important parameter for MCMEMS is the contact resistance, which should have a minimum value and is to be stable for the entire duration of service life. The value and stability of the contact resistance is mainly determined by the contact coating material. This paper presents the research results of a contact coating based on nanoscale ruthenium films obtained by electrolytic deposition. As a result of the performed investigations, the deposition modes of ruthenium films are chosen, the regularities of the contact resistance change depending on the number of contact switching, and the coating roughness are established. It is shown that changing the coating roughness makes it possible to minimize the contact resistance.

Keywords: Contact resistance, electrode coating, electrolythic deposition, magnetically controlled MEMS.

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Authors: C. Photiphitak, P. Rakkwamsuk, P. Muthitamongkol, C. Sae-Kung, C. Thanachayanont

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TiO2/Ag composite films were prepared by incorporating Ag in the pores of mesoporous TiO2 films using a photoreduction method. The Ag nanoparticle sizes were in a range of 3.66-38.56 nm. The TiO2/Ag composite films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscropy (TEM). The TiO2 films and TiO2/Ag composite films were immersed in a 0.3 mM N719 dye solution and characterized by UV-Vis spectrophotometer. The TiO2/Ag/N719 composite film showed that an optimal size of Ag nanoparticles was 19.12 nm and, hence, gave the maximum optical absorption spectra. The improved absorption was due to surface plasmon resonance induced by the Ag nanoparticles to enhance the absorption coefficient of the dye.

Keywords: Silver nanoparticle, TiO2/Ag composite films, Optical properties, surface plasmon resonance

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Authors: S. Tunmee, P. Wongpanya, I. Toda, X. L. Zhou, Y. Nakaya, N. Konkhunthot, S. Arakawa, H. Saitoh

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The hydrogenated amorphous carbon films (α-C:H) were deposited on p-type Si (100) substrates at different thicknesses by radio frequency plasma enhanced chemical vapor deposition technique (rf-PECVD). Raman spectra display asymmetric diamond-like carbon (DLC) peaks, representative of the α-C:H films. The decrease of intensity ID/IG ratios revealed the sp3 content arise at different thicknesses of the α-C:H films. In terms of mechanical properties, the high hardness and elastic modulus values showed the elastic and plastic deformation behaviors related to sp3 content in amorphous carbon films. Electrochemical properties showed that the α-C:H films exhibited excellent corrosion resistance in air-saturated 3.5 wt.% NaCl solution for pH 2 at room temperature. Thickness increasing affected the small sp2 clusters in matrix, restricting the velocity transfer and exchange of electrons. The deposited α-C:H films exhibited excellent mechanical properties and corrosion resistance.

Keywords: Thickness, Mechanical properties, Electrochemical corrosion properties, α-C:H film.

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Authors: G. Korotcenkov, V. Brinzari, B. K. Cho

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The thermoelectric properties of nano-scaled In₂O₃:Sn films deposited by spray pyrolysis are considered in the present report. It is shown that multicomponent In₂O₃:Sn-based films are promising material for the application in thermoelectric devices. It is established that the increase in the efficiency of thermoelectric conversion at C_Sn~5% occurred due to nano-scaled structure of the films studied and the effect of the grain boundary filtering of the low energy electrons. There are also analyzed the limitations that may appear during such material using in devices developed for the market of thermoelectric generators and refrigerators. Studies showed that the stability of nano-scaled film’s parameters is the main problem which can limit the application of these materials in high temperature thermoelectric converters.

Keywords: Energy conversion technologies, thermoelectricity, In2O3-based films, power factor, nanocomposites, stability.

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Authors: Dhiflaoui Hafedh, Khlifi Kaouthar, Ben Cheikh Larbi Ahmed

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The present study deals with the characterization of CrSiN coatings obtained by PVD magnetron sputtering systems. CrSiN films were deposited with different Si contents, in order to check the effect of at.% variation on the different properties of the Cr–N system. Coatings were characterized by scanning electron microscopy (SEM) for thickness measurements, X-ray diffraction. Surface morphology and the roughness characteristics were explored using AFM, Mechanicals properties, elastic and plastic deformation resistance of thin films were investigated using nanoindentation test. We observed that the Si addition improved the hardness and the Young’s modulus of the Cr–N system. Indeed, the hardness value is 18,56 GPa for CrSiN coatings. Besides, the Young’s modulus value is 224,22 GPa for CrSiN coatings for Si content of 1.2 at.%.

Keywords: Thin film, mechanicals properties, PVD.

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Authors: Jeff Letcher, Dennis Tierney, Haider Raad

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Antennas are devices for transmitting and/or receiving signals which make them a necessary component of any wireless system. In this paper, a thermal deposition technique is utilized as a method to fabricate antenna structures on substrates. Thin-film deposition is achieved by evaporating a source material (metals in our case) in a vacuum which allows vapor particles to travel directly to the target substrate which is encased with a mask that outlines the desired structure. The material then condenses back to solid state. This method is used in comparison to screen printing, chemical etching, and ink jet printing to indicate advantages and disadvantages to the method. The antenna created undergoes various testing of frequency ranges, conductivity, and a series of flexing to indicate the effectiveness of the thermal deposition technique. A single band antenna that is operated at 2.45 GHz intended for wearable and flexible applications was successfully fabricated through this method and tested. It is concluded that thermal deposition presents a feasible technique of producing such antennas.

Keywords: Thermal deposition, wearable antennas, Bluetooth technology, flexible electronics.

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Authors: Guojia Ma, Guoqiang Lin, Shuili Gong, Gang Sun, Dawang Wang

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A diamond-like carbon (DLC) based solid-lubricant film was designed and DLC films were successfully prepared using a microwave plasma enhanced magnetron sputtering deposition technology. Post-test characterizations including Raman spectrometry, X-ray diffraction, nano-indentation test, adhesion test, friction coefficient test were performed to study the influence of substrate bias voltage on the mechanical properties of the W- and S-doped DLC films. The results indicated that the W- and S-doped DLC films also had the typical structure of DLC films and a better mechanical performance achieved by the application of a substrate bias of -200V.

Keywords: Adhesive Strength, Coefficient of Friction, Substrate Bias, W- and S-doped DLC film

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Authors: Yong-Taeg Oh, Won Song, Seok-Eui Choi, Bo-Ra Koo, Dong-Chan Shin

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ZnO+Ga2O3 functionally graded thin films (FGTFs) were examined for their potential use as Solar cell and organic light emitting diodes (OLEDs). FGTF transparent conducting oxides (TCO) were fabricated by combinatorial RF magnetron sputtering. The composition gradient was controlled up to 10% by changing the plasma power of the two sputter guns. A Ga2O3+ZnO graded region was placed on the top layer of ZnO. The FGTFs showed up to 80% transmittance. Their surface resistances were reduced to < 10% by increasing the Ga2O3: pure ZnO ratio in the TCO. The FGTFs- work functions could be controlled within a range of 0.18 eV. The controlled work function is a very promising technology because it reduces the contact resistance between the anode and Hall transport layers of OLED and solar cell devices.

Keywords: Work Function, TCO, Functionally Graded Thin Films, Resistance, Transmittance.

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Authors: X. L. Zhou, S. Tunmee, I. Toda, K. Komatsu, S. Ohshio, H. Saitoh

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Hydrogenated amorphous carbon (a-C:H) films have been synthesized by a radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) technique with different bias voltage from 0.0 to -0.5 kV. The Raman spectra displayed the polymer-like hydrogenated amorphous carbon (PLCH) film with 0.0 to -0.1 and a-C:H films with -0.2 to -0.5 kV of bias voltages. The surface chemical information of all films were studied by X-ray photoelectron spectroscopy (XPS) technique, presented to C-C (sp2 and sp3) and C-O bonds, and relative carbon (C) and oxygen (O) atomics contents. The O contamination had affected on structure and optical properties. The true density of PLCH and a-C:H films were characterized by X-ray refractivity (XRR) method, showed the result as in the range of 1.16-1.73 g/cm3 that depending on an increasing of bias voltage. The hardness was proportional to the true density of films. In addition, the optical properties i.e. refractive index (n) and extinction coefficient (k) of these films were determined by a spectroscopic ellipsometry (SE) method that give formation to in 1.62-2.10 (n) and 0.04-0.15 (k) respectively. These results indicated that the optical properties confirmed the Raman results as presenting the structure changed with applied bias voltage increased.

Keywords: Negative bias voltage, a-C:H film, Oxygen contamination, Optical properties.

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Authors: Jürgen Geiser, Robert Röhle

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In this paper we present modeling and simulation for physical vapor deposition for metallic bipolar plates. In the models we discuss the application of different models to simulate the transport of chemical reactions of the gas species in the gas chamber. The so called sputter process is an extremely sensitive process to deposit thin layers to metallic plates. We have taken into account lower order models to obtain first results with respect to the gas fluxes and the kinetics in the chamber. The model equations can be treated analytically in some circumstances and complicated multi-dimensional models are solved numerically with a software-package (UG unstructed grids, see [1]). Because of multi-scaling and multi-physical behavior of the models, we discuss adapted schemes to solve more accurate in the different domains and scales. The results are discussed with physical experiments to give a valid model for the assumed growth of thin layers.

Keywords: Convection-diffusion equations, multi-scale problem, physical vapor deposition, reaction equations, splitting methods.

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Authors: Tahereh Talebi, Reza Ghomashchi, Pejman Talemi, Sima Aminorroaya

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Electrophoretic deposition (EPD) of p-type Bi₂Te₃ material has been accomplished, and a high quality crack-free thick film has been achieved for thermoelectric (TE) applications. TE generators (TEG) can convert waste heat into electricity, which can potentially solve global warming problems. However, TEG is expensive due to the high cost of materials, as well as the complex and expensive manufacturing process. EPD is a simple and cost-effective method which has been used recently for advanced applications. In EPD, when a DC electric field is applied to the charged powder particles suspended in a suspension, they are attracted and deposited on the substrate with the opposite charge. In this study, it has been shown that it is possible to prepare a TE film using the EPD method and potentially achieve high TE properties at low cost. The relationship between the deposition weight and the EPD-related process parameters, such as applied voltage and time, has been investigated and a linear dependence has been observed, which is in good agreement with the theoretical principles of EPD. A stable EPD suspension of p-type Bi₂Te₃ was prepared in a mixture of acetone-ethanol with triethanolamine as a stabilizer. To achieve a high quality homogenous film on a copper substrate, the optimum voltage and time of the EPD process was investigated. The morphology and microstructures of the green deposited films have been investigated using a scanning electron microscope (SEM). The green Bi₂Te₃ films have shown good adhesion to the substrate. In summary, this study has shown that not only EPD of p-type Bi₂Te₃ material is possible, but its thick film is of high quality for TE applications.

Keywords: Electrical conductivity, electrophoretic deposition, p-type Bi2Te3, thermoelectric materials, thick films.

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Authors: Hamdi Muhyuddin D. Barra, Henry J. Ramos

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Titanium nitride (TiN) has been synthesized using the sheet plasma negative ion source (SPNIS). The parameters used for its effective synthesis has been determined from previous experiments and studies. In this study, further enhancement of the deposition rate of TiN synthesis and advancement of the SPNIS operation is presented. This is primarily achieved by the addition of Sm-Co permanent magnets and a modification of the configuration in the TiN deposition process. The magnetic enhancement is aimed at optimizing the sputtering rate and the sputtering yield of the process. The Sm-Co permanent magnets are placed below the Ti target for better sputtering by argon. The Ti target is biased from –250V to – 350V and is sputtered by Ar plasma produced at discharge current of 2.5–4A and discharge potential of 60–90V. Steel substrates of dimensions 20x20x0.5mm3 were prepared with N2:Ar volumetric ratios of 1:3, 1:5 and 1:10. Ocular inspection of samples exhibit bright gold color associated with TiN. XRD characterization confirmed the effective TiN synthesis as all samples exhibit the (200) and (311) peaks of TiN and the non-stoichiometric Ti2N (220) facet. Cross-sectional SEM results showed increase in the TiN deposition rate of up to 0.35μm/min. This doubles what was previously obtained [1]. Scanning electron micrograph results give a comparative morphological picture of the samples. Vickers hardness results gave the largest hardness value of 21.094GPa.

Keywords: Chemical vapor deposition, Magnetized sheetplasma, Thin-film synthesis, Titanium nitride.

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Authors: Gui Sob Byun, Yang Doo Lee, Kyong Soo Lee, Keun Soo Lee, Sun-Woo Park, Byeong Kwon Ju

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We fabricated multi-walled carbon nanotube (MCNT) emitters by an electroporetic deposition (EPD) method using a MCNT-sodium dodecyl sulfate (SDS) suspension. MCNT films were prepared on graphite tip using EPD. We observe field emission properties of MCNT film after heat treatment. Consequently, The MCNT film on graphite tip exhibit good electron emission current.

Keywords: Field emission, Multi-wall carbon-nanotube (MCNT), Electrophoretic deposition (EPD)

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Authors: Emma R. Arakelova, Stepan G. Grigoryan, Ashot M. Khachatryan, Karapet E. Avjyan, Lilia M. Savchenko, Flora G. Arsenyan

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The paper presents a new drugs delivery system, based on the thin film technology. As a model antitumor drug, highly toxic doxorubicin is chosen. The system is based on the technology of obtaining zinc oxide composite of doxorubicin by deposition of nanosize ZnO films on the surface of doxorubicin coating on glass substrate using DC magnetron sputtering of zinc targets in Ar:O₂ medium at room temperature. For doxorubicin zinc oxide compositions in the form of coatings and gels with 180-200nm thick ZnO films, higher (by a factor 2) in vivo (ascitic Ehrlich's carcinoma) antitumor activity is observed at low doses of doxorubicin in comparison with that of the initial preparation at therapeutic doses. The vector character of the doxorubicin zinc oxide composite transport to tumor tissues ensures the increase in antitumor activity as well as decrease of toxicity in comparison with the initial drug.

Keywords: Antitumor activity, doxorubicin, DC magnetron sputtering, zinc oxide.

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Authors: C. Photiphitak, P. Rakkwamsuk, P. Muthitamongkol, C. Thanachayanont

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TiO2/MgO composite films were prepared by coating the magnesium acetate solution in the pores of mesoporous TiO2 films using a dip coating method. Concentrations of magnesium acetate solution were varied in a range of 1x10-4 – 1x10-1 M. The TiO2/MgO composite films were characterized by scanning electron microscopy (SEM), transmission electron microscropy (TEM), electrochemical impedance spectroscopy(EIS) , transient voltage decay and I-V test. The TiO2 films and TiO2/MgO composite films were immersed in a 0.3 mM N719 dye solution. The Dye-sensitized solar cells with the TiO2/MgO/N719 structure showed an optimal concentration of magnesium acetate solution of 1x10-3 M resulting in the MgO film estimated thickness of 0.0963 nm and giving the maximum efficiency of 4.85%. The improved efficiency of dyesensitized solar cell was due to the magnesium oxide film as the wide band gap coating decays the electron back transfer to the triiodide electrolyte and reduce charge recombination.

Keywords: Magnesium oxide thin film, TiO2/MgO composite films, Electrochemical Impedance Spectrum, Transient voltage decay

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Authors: Dhiflaoui Hafedh, Khlifi Kaouthar, Ben Cheikh Larbi Ahmed

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These Monolayer and multilayer coatings of CrN and AlCrN deposited on 100Cr6 (AISI 52100) substrate by PVD magnetron sputtering system. The microstructures of the coatings were characterized using atomic force microscopy (AFM). The AFM analysis revealed the presence of domes and craters that are uniformly distributed over all surfaces of the various layers. Nanoindentation measurement of CrN coating showed maximum hardness (H) and modulus (E) of 14 GPa and 190 GPa, respectively. The measured H and E values of AlCrN coatings were found to be 30 GPa and 382 GPa, respectively. The improved hardness in both the coatings was attributed mainly to a reduction in crystallite size and decrease in surface roughness. The incorporation of Al into the CrN coatings has improved both hardness and Young’s modulus.

Keywords: CrN/AlCrN, coatings, hardness, nano-indentation.

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Authors: Feng-Hao Hsu, Na-Fu Wang, Yu-Zen Tsai, Yu-Song Cheng, Cheng-Fu Yang, Mau-Phon Houng

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This study fabricates p-type Ni_1−xO:Li/n-Si heterojunction solar cells (P⁺/n HJSCs) by using radio frequency (RF) magnetron sputtering and investigates the effect of substrate temperature on photovoltaic cell properties. Grazing incidence x-ray diffraction, four point probe, and ultraviolet-visible-near infrared discover the optoelectrical properties of p-Ni_1-xO thin films. The results show that p-Ni_1-xO thin films deposited at 300 ^oC has the highest grain size (22.4 nm), average visible transmittance (~42%), and electrical resistivity (2.7 Ωcm). However, the conversion efficiency of cell is shown only 2.33% which is lower than the cell (3.39%) fabricated at room temperature. This result can be mainly attributed to interfacial layer thickness (SiO_x) reduces from 2.35 nm to 1.70 nm, as verified by high-resolution transmission electron microscopy.

Keywords: Heterojunction, nickel oxide, solar cells, sputtering.

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Authors: Kandpal M. , Gundampati R. K , Debnath M.

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Microbial contamination, most of which are fecal born in drinking water and food industry is a serious threat to humans. Escherichia coli is one of the most common and prevalent among them. We have developed a sensor for rapid and an early detection of contaminants, taking E.coli as a threat indicator organism. The sensor is based on co-polymerizations of aniline and formaldehyde in form of thin film over glass surface using the vacuum deposition technique. The particular doping combination of thin film with Fe-Al and Fe-Cu in different concentrations changes its non conducting properties to p- type semi conductor. This property is exploited to detect the different contaminants, believed to have the different surface charge. It was found through experiments that different microbes at same OD (0.600 at 600 nm) have different conductivity in solution. Also the doping concentration is found to be specific for attracting microbes on the basis of surface charge. This is a simple, cost effective and quick detection method which not only decreases the measurement time but also gives early warnings for highly contaminated samples.

Keywords: Sensor, Vacuum deposition technique, thin film, E.coli detection, doping concentration.

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Authors: G. Gokceli, O. Eksik, E. Ozkan Zayim, N. Karatepe

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Alternative electrode materials for optoelectronic devices have been widely investigated in recent years. Since indium tin oxide (ITO) is the most preferred transparent conductive electrode, producing ITO films by simple and cost-effective solution-based techniques with enhanced optical and electrical properties has great importance. In this study, single- and multi-walled carbon nanotubes (SWCNT and MWCNT) incorporated into the ITO structure to increase electrical conductivity, mechanical strength, and chemical stability. Carbon nanotubes (CNTs) were firstly functionalized by acid treatment (HNO₃:H₂SO₄), and the thermal resistance of CNTs after functionalization was determined by thermogravimetric analysis (TGA). Thin films were then prepared by spin coating technique and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), four-point probe measurement system and UV-Vis spectrophotometer. The effects of process parameters were compared for ITO, MWCNT-ITO, and SWCNT-ITO films. Two factors including CNT concentration and annealing temperature were considered. The UV-Vis measurements demonstrated that the transmittance of ITO films was 83.58% at 550 nm, which was decreased depending on the concentration of CNT dopant. On the other hand, both CNT dopants provided an enhancement in the crystalline structure and electrical conductivity. Due to compatible diameter and better dispersibility of SWCNTs in the ITO solution, the best result in terms of electrical conductivity was obtained by SWCNT-ITO films with the 0.1 g/L SWCNT dopant concentration and heat-treatment at 550 °C for 1 hour.

Keywords: CNT incorporation, ITO electrode, spin coating, thin film.

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Authors: D.N Awang Sh'ri, E. Hamzah

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The deposition of diamond films on a Si3N4 substrate is an attractive technique for industrial applications because of the excellent properties of diamond. Pretreatment of substrate is very important prior to diamond deposition to promote nucleation and adhesion between coating and substrate. Deposition of nanocrystalline diamonds films on silicon nitride substrate have been carried out by HF-CVD technique using mixture of methane and hydrogen gases. Different pretreatment of substrate including chemical etching consists of hot acid etching and basic etching and mechanical etching were used to study the quality of diamond formed on the substrate. The structure and morphology of diamond coating have been studied using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM) while diamond film quality has been characterized using Raman spectroscopy. AFM was used to investigate the effect of chemical etching and mechanical pretreatment on the surface roughness of the substrates and the resultant morphology of nanocrystalline diamond. It was found that diamond film deposited on as-received, basic etched and grinded substrate shows the morphology of cauliflower while blasted and acidic etched substrates produce smooth, continuous diamond film. However, the Raman investigation did not show any deviation in quality of diamond film for any pretreatment.

Keywords: Nanocrystalline diamond, Chemical VaporDeposition, Pretreatment, Silicon Nitride

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Authors: G. Zuppardi, F. Romano

Abstract:

Technology of thin film deposition is of interest in many engineering fields, from electronic manufacturing to corrosion protective coating. A typical deposition process, like that developed at the University of Eindhoven, considers the deposition of a thin, amorphous film of C:H or of Si:H on the substrate, using the Expanding Thermal arc Plasma technique. In this paper a computing procedure is proposed to simulate the flow field in a deposition chamber similar to that at the University of Eindhoven and a sensitivity analysis is carried out in terms of: precursor mass flow rate, electrical power, supplied to the torch and fluid-dynamic characteristics of the plasma jet, using different nozzles. To this purpose a deposition chamber similar in shape, dimensions and operating parameters to the above mentioned chamber is considered. Furthermore, a method is proposed for a very preliminary evaluation of the film thickness distribution on the substrate. The computing procedure relies on two codes working in tandem; the output from the first code is the input to the second one. The first code simulates the flow field in the torch, where Argon is ionized according to the Saha-s equation, and in the nozzle. The second code simulates the flow field in the chamber. Due to high rarefaction level, this is a (commercial) Direct Simulation Monte Carlo code. Gas is a mixture of 21 chemical species and 24 chemical reactions from Argon plasma and Acetylene are implemented in both codes. The effects of the above mentioned operating parameters are evaluated and discussed by 2-D maps and profiles of some important thermo-fluid-dynamic parameters, as per Mach number, velocity and temperature. Intensity, position and extension of the shock wave are evaluated and the influence of the above mentioned test conditions on the film thickness and uniformity of distribution are also evaluated.

Keywords: Deposition chamber, Direct Simulation Mote Carlo method (DSMC), Plasma chemistry, Rarefied gas dynamics.

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Authors: Dirk Hegemann, Martin Amberg

Abstract:

Sputter deposition processes, especially for sputtering from metal targets, are well investigated. For practical reasons, i.e. for industrial processes, energetic considerations for sputter deposition are useful in order to optimize the sputtering process. In particular, for substrates at floating conditions it is required to obtain energetic conditions during film growth that enables sufficient dense metal films of good quality. The influence of ion energies, energy density and momentum transfer is thus examined both for sputtering at the target as well as during film growth. Different regimes dominated by ion energy, energy density and momentum transfer were identified by using different plasma sources and by varying power input, pressure and bias voltage.

Keywords: Energy density, film growth, momentum transfer, sputtering.

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Authors: Xiaodong Gao, Pingchuan Dong, Qichao Gao

Abstract:

This work attempts to predict the deposition rate of asphaltene particles in blockage tube through CFD simulation. The Euler-Lagrange equation has been applied during the flow of crude oil and asphaltene particles. The net gravitational force, virtual mass, pressure gradient, Saffman lift, and drag forces are incorporated in the simulations process. Validation of CFD simulation results is compared to the benchmark experiments from the previous literature. Furthermore, the effects of blockage location, blockage length, and blockage thickness on deposition rate are also analyzed. The simulation results indicate that the maximum deposition rate of asphaltene occurs in the blocked tube section, and the greater the deposition thickness, the greater the deposition rate. Moreover, the deposition amount and maximum deposition rate along the length of the tube have the same trend. Results of this study are in the ability to better understand the deposition of asphaltene particles in production and help achieve to deal with the asphaltene challenges.

Keywords: Asphaltene deposition rate, blockage length, blockage thickness, blockage diameter, transient condition.

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