Search results for: Strained Si/SiGe on insulator.

Authors: Morteza Fathipour, Samira Omidbakhsh, Kimia Khodayari

Abstract:

RF performance of SOI CMOS device has attracted significant amount of interest recently. In order to improve RF parameters, Strained Si/Relaxed Si0.8Ge0.2 investigated as a replacement for Si technology .Enhancement of carrier mobility associated with strain engineering makes Strained Si a promising candidate for improving RF performance of CMOS technology. From the simulation, the cut-off frequency is estimated to be 224 GHZ, whereas in SOI at similar bias is about 188 GHZ. Therefore, Strained Si exhibits 19% improvement in cut-off frequency over similar Si counterpart. In this paper, Ion/Ioff ratio is studied as one of the key parameters in logic and digital application. Strained Si/SiGe demonstrates better Ion/Ioff characteristic than SOI, in similar channel length of 100 nm.Another important key analog figures of merit such as Early Voltage (VEA) ,transconductance vs drain current (gm /Ids) are studied. They introduce the efficiency of the devices to convert dc power into ac frequency.

Keywords: cut-off frequency, RF application, Silicon oninsulator, Strained Si/SiGe on insulator.

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Authors: V.Fathipour, M. A. Malakootian, S. Fathipour, M. Fathipour

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In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.

Keywords: High Frequency MOSFET, Design of RF LDMOS, Strained-Silicon, LDMOS.

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Authors: Y. Li, K. Buddharaju, X. P. Wang

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The mechanism of nickel (Ni) metallization in silicon-germanium (Si_0.5Ge_0.5) alloy nanowire (NW) was studied. Transmission electron microscope imaging with in-situ annealing was conducted at temperatures of 200^oC to 600°C. During rapid formation of Ni germanosilicide, loss of material from from the SiGe NW occurred which led to the formation of a thin Ni germanosilicide filament and eventual void. Energy dispersive X-ray spectroscopy analysis along the SiGe NW before and after annealing determined that Ge atoms tend to out-diffuse from the Ni germanosilicide towards the Ni source in the course of annealing. A model for the Ni germanosilicide formation in SiGe NW is proposed to explain this observation.

Keywords: SiGe, nanowires, germanosilicide.

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Authors: Fatemeh Karimi, Morteza Fathipour, Hamdam Ghanatian, Vala Fathipour

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In this paper we investigate the electrical characteristics of a new structure of gate all around strained silicon nanowire field effect transistors (FETs) with dual dielectrics by changing the radius (RSiGe) of silicon-germanium (SiGe) wire and gate dielectric. Indeed the effect of high-κ dielectric on Field Induced Barrier Lowering (FIBL) has been studied. Due to the higher electron mobility in tensile strained silicon, the n-type FETs with strained silicon channel have better drain current compare with the pure Si one. In this structure gate dielectric divided in two parts, we have used high-κ dielectric near the source and low-κ dielectric near the drain to reduce the short channel effects. By this structure short channel effects such as FIBL will be reduced indeed by increasing the RSiGe, ID-VD characteristics will be improved. The leakage current and transfer characteristics, the threshold-voltage (Vt), the drain induced barrier height lowering (DIBL), are estimated with respect to, gate bias (VG), RSiGe and different gate dielectrics. For short channel effects, such as DIBL, gate all around strained silicon nanowire FET have similar characteristics with the pure Si one while dual dielectrics can improve short channel effects in this structure.

Keywords: SNWT (silicon nanowire transistor), Tensile Strain, high-κ dielectric, Field Induced Barrier Lowering (FIBL), cylindricalnano wire (CW), drain induced barrier lowering (DIBL).

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Authors: Guiheng Zhang, Wei Zhang, Jun Fu, Yudong Wang

Abstract:

A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Volterra Series is applied to analyze nonlinearity sources of SiGe HBT device model clearly. Meanwhile, the influence of operating current to IMD3 is discussed. Then a β-helper current mirror bias circuit is applied to improve linearity, since the β-helper current mirror bias circuit can offer stable base biasing voltage. Meanwhile, it can also work as predistortion circuit when biasing voltages of three bias circuits are fine-tuned, by this way, the power gain and operating current of PA are optimized for best linearity. The three power stages which fabricated by 0.18 μm SiGe technology are bonded to the printed circuit board (PCB) to obtain impedances by Load-Pull system, then matching networks are done for best linearity with discrete passive components on PCB. The final measured three-stage PA exhibits 21.1 dBm of output power at 1 dB compression point (OP1dB) with power added efficiency (PAE) of 20.6% and 33 dB power gain under 3.3 V power supply voltage.

Keywords: High gain power amplifier, linearization bias circuit, SiGe HBT model, Volterra Series.

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Authors: M. Nageswara Rao, V. S. N. K. Chaitanya, P. Pratyusha

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High voltage insulator has to withstand sever electrical stresses. Higher electrical stresses lead to erosion of the insulator surface. Degradation of insulating properties leads to flashover and in some extreme cases it may cause to puncture. For analyzing these electrical stresses and implement necessary actions to diminish the electrical stresses, numerical methods are best. By minimizing the electrical stresses, reliability of the power system will improve. In this paper electric field intensity at critical regions of 400 kV silicone composite insulator is analyzed using finite element method. Insulator is designed using FEMM-2D software package. Electric Field Analysis (EFA) results are analyzed for five cases i.e., only insulator, insulator with two sides arcing horn, High Voltage (HV) end grading ring, grading ring-arcing horn arrangement and two sides grading ring. These EFA results recommended that two sides grading ring is better for minimization of electrical stresses and improving life span of insulator.

Keywords: Polymer insulator, electric field analysis, numerical methods, finite element method, FEMM-2D.

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Authors: Hyunwon Moon

Abstract:

It is necessary to realize new biomedical wireless communication systems which send the signals collected from various bio sensors located at human body in order to monitor our health. Also, it should seamlessly connect to the existing wireless communication systems. A 5.8 GHz ISM band low power RF front-end receiver for a biomedical wireless communication system is implemented using a 0.5 µm SiGe BiCMOS process. To achieve low power RF front-end, the current optimization technique for selecting device size is utilized. The implemented low noise amplifier (LNA) shows a power gain of 9.8 dB, a noise figure (NF) of below 1.75 dB, and an IIP3 of higher than 7.5 dBm while current consumption is only 6 mA at supply voltage of 2.5 V. Also, the performance of a down-conversion mixer is measured as a conversion gain of 11 dB and SSB NF of 10 dB.

Keywords: Biomedical, low noise amplifier, mixer, receiver, RF front-end, SiGe.

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Authors: I. Kurashvili, G. Darsavelidze, T. Kimeridze, G. Chubinidze, I. Tabatadze

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At present, a number of modern semiconductor devices based on SiGe alloys have been created in which the latest achievements of high technologies are used. These devices might cause significant changes to networking, computing, and space technology. In the nearest future new materials based on SiGe will be able to restrict the A³B⁵ and Si technologies and firmly establish themselves in medium frequency electronics. Effective realization of these prospects requires the solution of prediction and controlling of structural state and dynamical physical –mechanical properties of new SiGe materials. Based on these circumstances, a complex investigation of structural defects and structural-sensitive dynamic mechanical characteristics of SiGe alloys under different external impacts (deformation, radiation, thermal cycling) acquires great importance. Internal friction (IF) and shear modulus temperature and amplitude dependences of the monocrystalline boron-doped Si_1-xGe_x(x≤0.05) alloys grown by Czochralski technique is studied in initial and ⁶⁰Co gamma-irradiated states. In the initial samples, a set of dislocation origin relaxation processes and accompanying modulus defects are revealed in a temperature interval of 400-800 ⁰C. It is shown that after gamma-irradiation intensity of relaxation internal friction in the vicinity of 280 ⁰C increases and simultaneously activation parameters of high temperature relaxation processes reveal clear rising. It is proposed that these changes of dynamical mechanical characteristics might be caused by a decrease of the dislocation mobility in the Cottrell atmosphere enriched by the radiation defects.

Keywords: Gamma-irradiation, internal friction, shear modulus, SiGe alloys.

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Authors: B. Marungsri, W. Onchantuek, A. Oonsivilai

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This paper presents the simulation the results of electric field and potential distributions along surface of silicone rubber polymer insulators. Near the same leakage distance subjected to 15 kV in 50 cycle salt fog ageing test, alternate sheds silicone rubber polymer insulator showed better contamination performance than straight sheds silicone rubber polymer insulator. Severe surface ageing was observed on the straight sheds insulator. The objective of this work is to elucidate that electric field distribution along straight sheds insulator higher than alternate shed insulator in salt fog ageing test. Finite element method (FEM) is adopted for this work. The simulation results confirmed the experimental data, as well.

Keywords: Electric field distribution, potential distribution, silicone rubber polymer insulator, finite element method.

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Authors: B. Marungsri, W. Onchantuek, A. Oonsivilai, T. Kulworawanichpong

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This paper presents the simulation results of electric field and potential distributions along surface of silicone rubber polymer insulators under clean and various contamination conditions with/without water droplets. Straight sheds insulator having leakage distance 290 mm was used in this study. Two type of contaminants, playwood dust and cement dust, have been studied the effect of contamination on the insulator surface. The objective of this work is to comparison the effect of contamination on potential and electric field distributions along the insulator surface when water droplets exist on the insulator surface. Finite element method (FEM) is adopted for this work. The simulation results show that contaminations have no effect on potential distribution along the insulator surface while electric field distributions are obviously depended on contamination conditions.

Keywords: electric field distribution, potential distribution, silicone rubber polymer insulator, finite element method

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Authors: Waluyo, Ngapuli I. Sinisuka, Suwarno, Maman A. Djauhari

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This paper presents the experimental results of comparison between leakage currents and discharge currents. The leakage currents were obtained on polluted porcelain insulator. Whereas, the discharge currents were obtained on lightly artificial polluted porcelain specimen. The conducted measurements were leakage current or discharge current and applied voltage. The insulator or specimen was in a hermetically sealed chamber, and the current waveforms were analyzed using FFT. The result indicated that the leakage current (LC) on low RH condition the fifth harmonic would be visible, and followed by the seventh harmonic. The insulator had capacitive property. Otherwise, on 99% relative humidity, the fifth harmonic would also be visible, and the phase angle reached up to 12.2 degree. Whereas, on discharge current, the third harmonic would be visible, and followed by fifth harmonic. The third harmonic would increase as pressure reduced. On this condition, the specimen had a non-linear characteristics

Keywords: leakage current, discharge current, third harmonic, fifth harmonic, porcelain.

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Authors: M. Nageswara Rao, V. S. N. K. Chaitanya, P. Vijaya Haritha

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Insulators are one of the most significant equipment in power system. The insulators’ operation may affect the power flow, line loss and reliability. The electrical parameters that influence the performance of insulator are surface leakage current, corona and dry band arcing. Electric field stresses on the insulator surface will degrade the insulating properties and lead to puncture. Electric filed stresses can be analyzed by numerical methods and experimental evaluation. As per economic aspects, evaluation by numerical methods are best. In outdoor insulation, a hydrophobic surface can facilitate to prevent water film formation on the insulation surface, which is decisive for diminishing leakage currents and partial discharge (PD) under heavy polluted environments and harsh weather conditions. Polymer materials like silicone rubber have an outstanding hydrophobic property among general insulation materials. In this paper, electrical field intensity of 220 kV porcelain and polymer double tension insulator strings at critical regions are analyzed and compared by using Finite Element Method. Hydrophobic conditions of polymer insulator with equal and unequal water molecule conditions are verified by using finite element method.

Keywords: Porcelain insulator, polymer insulator, electric field analysis, EFA, finite element method, FEM, hydrophobicity, FEMM-2D.

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Authors: Shiyang Zhu, G. Q. Lo, D. L. Kwong

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Silicon photonics is merging as a unified platform for driving photonic based telecommunications and for local photonic based interconnect but it suffers from large footprint as compared with the nanoelectronics. Plasmonics is an attractive alternative for nanophotonics. In this work, two CMOS compatible plasmonic waveguide platforms are compared. One is the horizontal metal-insulator-Si-insulator-metal nanoplasmonic waveguide and the other is metal-insulator-Si hybrid plasmonic waveguide. Various passive and active photonic devices have been experimentally demonstrated based on these two plasmonic waveguide platforms.

Keywords: Plasmonics, on-chip integration, Silicon photonics.

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Authors: Waluyo, Parouli M. Pakpahan, Suwarno, Maman A. Djauhari

Abstract:

This paper presents the experimental results of leakage current waveforms which appears on porcelain insulator surface due to existence of artificial pollutants. The tests have been done using the chemical compounds of NaCl, Na2SiO3, H2SO4, CaO, Na2SO4, KCl, Al2SO4, MgSO4, FeCl3, and TiO2. The insulator surface was coated with those compounds and dried. Then, it was tested in the chamber where the high voltage was applied. Using correspondence analysis, the result indicated that the fundamental harmonic of leakage current was very close to the applied voltage and third harmonic leakage current was close to the yielded leakage current amplitude. The first harmonic power was correlated to first harmonic amplitude of leakage current, and third harmonic power was close to third harmonic one. The chemical compounds of H2SO4 and Na2SiO3 affected to the power factor of around 70%. Both are the most conductive, due to the power factor drastically increase among the chemical compounds.

Keywords: Chemical compound, harmonic, porcelain insulator, leakage current.

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Authors: Pin-Hsu Kao, Wen-Shou Tseng, Hung-Ming Tai, Yuan-Ming Chang, Jenh-Yih Juang

Abstract:

We report a lithography-free approach to fabricate the biomimetics, quasi-beehive Si nanostructures (QBSNs), on Si-substrates. The self-assembled SiGe nanoislands via the strain induced surface roughening (Asaro-Tiller-Grinfeld instability) during in-situ annealing play a key role as patterned sacrifice regions for subsequent reactive ion etching (RIE) process performed for fabricating quasi-beehive nanostructures on Si-substrates. As the measurements of field emission, the bare QBSNs show poor field emission performance, resulted from the existence of the native oxide layer which forms an insurmountable barrier for electron emission. In order to dramatically improve the field emission characteristics, the platinum nanopillars (Pt-NPs) were deposited on QBSNs to form Pt-NPs/QBSNs heterostructures. The turn-on field of Pt-NPs/QBSNs is as low as 2.29 V/μm (corresponding current density of 1 μA/cm2), and the field enhancement factor (β-value) is significantly increased to 6067. More importantly, the uniform and continuous electrons excite light emission, due to the surrounding filed emitters from Pt-NPs/QBSNs, can be easily obtained. This approach does not require an expensive photolithographic process and possesses great potential for applications.

Keywords: Biomimetics, quasi-beehive Si, SiGe nanoislands, platinum nanopillars, field emission.

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Authors: Harun Gülan, Muhsin Tunay Gencoglu, Mehmet Cebeci

Abstract:

The main function of the insulators used in high voltage (HV) transmission lines is to insulate the energized conductor from the pole and hence from the ground. However, when the insulators fail to perform this insulation function due to various effects, failures occur. The deterioration of the insulation results either from breakdown or surface flashover. The surface flashover is caused by the layer of pollution that forms conductivity on the surface of the insulator, such as salt, carbonaceous compounds, rain, moisture, fog, dew, industrial pollution and desert dust. The source of the majority of failures and interruptions in HV lines is surface flashover. This threatens the continuity of supply and causes significant economic losses. Pollution flashover in HV insulators is still a serious problem that has not been fully resolved. In this study, a water jet test system has been established in order to investigate the behavior of insulators under dirty conditions and to determine their flashover performance. Flashover behavior of the insulators is examined by applying impulse voltages in the test system. This study aims to investigate the insulator behaviour under high impulse voltages. For this purpose, a water jet test system was installed and experimental results were obtained over a real system and analyzed. By using the water jet test system instead of the actual insulator, the damage to the insulator as a result of the flashover that would occur under impulse voltage was prevented. The results of the test system performed an important role in determining the insulator behavior and provided predictability.

Keywords: Insulator, pollution flashover, high impulse voltage, water jet model.

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Authors: A.G.E. Sutjipto, Jufriadi, R. Muhida, Afzeri, E.Y. Adesta

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Charging and discharging phenomenon on the surface of materials can be found in plasma display panel, spacecraft charging, high voltage insulator, etc. This report gives a simple explanation on this phenomenon. A scanning electron microscope was used not only as a tool to produce energetic electron beam to charge an insulator without metallic coating and to produce a surface discharging (surface breakdown/flashover) but also to observe the visible charging and discharging on the sample surface. A model of electric field distribution on the surface was developed in order to explain charging and discharging phenomena. Since charging and discharging process involves incubation time, therefore this process can be used to evaluate the insulation property of materials under electron bombardment.

Keywords: Flashover, SEM, Electron Bombardment, Electric Field.

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Authors: Yasin Khan

Abstract:

Overhead electrical insulators form an important link in an electric power system. Along with the traditional insulators (i.e. glass and porcelain, etc) presently the polymeric insulators are also used world widely. These polymeric insulators are very sensitive to various environmental parameters such temperature, environmental pollution, UV-radiations, etc. which seriously effect their electrical, chemical and hydrophobic properties. The UV radiation level in the central region of Saudi Arabia is high as compared to the IEC standard for the accelerated aging of the composite insulators. Commonly used suspension type of composite EPDM (Ethylene Propylene Diene Monomer) insulator was subjected to accelerated stress aging as per modified IEC standard simulating the inland arid deserts atmospheric condition and also as per IEC-61109 standard. The hydrophobic characteristics were studied by measuring the contact angle along the insulator surface before and after the accelerated aging of the samples. It was found that EPDM insulator loses it hydrophobic properties proportional to the intensity of UV irradiations and its rate of recovery is also very low as compared to Silicone Rubber insulator.KeywordsEPDM, composite insulators, accelerated aging, hydrophobicity, contact angle.

Keywords: EPDM, composite insulators, accelerated aging, hydrophobicity, contact angle.

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Authors: Gugyong Kim, Sugnsu Kang, Yongjun Lee, Sooncheol Park, Wonwook Jung

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When cars are released from the factory, strut noises are very small and therefore it is difficult to perceive them. As the use time and travel distance increase, however, strut noises get larger so as to cause users much uneasiness. The noises generated at the field include engine noises and flow noises and therefore it is difficult to clearly discern the noises generated from struts. This study developed a test method which can reproduce field strut noises in the lab. Using the newly developed noise evaluation test, this study analyzed the effects that insulator performance degradation and failure can have on car noises. The study also confirmed that the insulator durability test by the simple back-and-forth motion cannot completely reflect the state of the parts failure in the field. Based on this, the study also confirmed that field noises can be reproduced through a durability test that considers heat aging.

Keywords: Insulator, noise, performance degradation, strut

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Authors: M. Nageswara Rao, N. Sumathi, V. S. N. K. Chaitanya

Abstract:

In electrical power system, high voltage insulators are necessary for consistent performance. All insulators are exposed to different mechanical and electrical stresses. Mechanical stresses occur due to various loads such as wind load, hardware and conductors weight. Electrical stresses are due to over voltages and operating voltages. The performance analysis of polymer insulators is an essential, as most of the electrical utility companies are employing polymer insulators for new and updated transmission lines. In this paper, electric field is analyzed for 400 kV silicone (SiR) composite insulator by COULOMB 3D software based on boundary element method. The field results are compared with EPRI reference values. Our results proved that values at critical regions are very less compared to EPRI reference values. And also experimentally 400 kV single V suspension string is evaluated as per IEC standards.

Keywords: Electric field analysis, silicone composite insulator, boundary element method, RIV, Corona.

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Authors: Paniz Tafakori, Ali A. Orouji

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In this paper the features of multiple material gate silicon-on-insulator MOSFETs are presented and compared with single material gate silicon-on-insulator MOSFET structures. The results indicate that the multiple material gate structures reduce short channel effects such as drain induce barrier lowering, hot electron effect and better current characteristics in comparison with single material structures

Keywords: Short-channel effects (SCEs), Dual material gate (DMG), Triple material gate (TMG), Pentamerous material gate (PMG).

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Authors: J. Grasaesom, S. Thong-om, W. Payakcho, A. Oonsivilai, B. Marungsri

Abstract:

This paper presents the experimental results on ageing deterioration of silicone rubber outdoor polymer insulator under salt water dip wheel test based on IEC 62217. In order to comparison effect of chemical contents, silicone rubber outdoor polymer insulators having same configuration and leakage distant from two manufactures were tested together continuously 30,000 test cycles. Many discharge activities were observed in during the test. After 30,000 test cycles, in spite of same configuration, differences in degree of surface aging were observed. Physical analysis such as decreasing in hydrophobicity and increasing in hardness measurement were measured on two-type tested specimen surface in order to confirm degree of surface ageing. Furthermore, chemical analysis by ATR-FTIR to diagnose the chemical change of tested specimen surface was conducted to confirm the physical analysis results.

Keywords: ageing of silicone rubber, salt water dip wheel test, silicone rubber polymer insulator

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Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

Abstract:

Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, Kink Effect, SILVACO TCAD.

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Authors: Asfar Ali Khan, Ekram Husain

Abstract:

Modern Society is strongly dependent on a reliable power supply. The availability of cheap and reliable supply of electrical energy is an indicator of societal welfare. Uninterrupted reliable operation of a modern power system depends to a great extent on reliable and satisfactory performance of insulators under different environmental conditions. This paper reports result of natural pollution tests that have been done at sites around city of Aligarh (India). Flashover voltage per insulation distance (FOVUID) of porcelain disc insulator for different pH values, ESDD has been recorded for proper correlation between electrical and chemical parameters. The pH of the contaminants has been suggested to be an effective pollution severity indicator and may be used as a diagnostic parameter for proper maintenance of porcelain insulators.

Keywords: Porcelain insulators, Flashover Voltage, pH value, Conductivity, ESDD.

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Authors: P. Nadimi, D. D. Caviglia, E. Di Zitti

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We propose an all optical flip-flop circuit composedof two Silicon-on-insulator microring resonators coupled to straightwaveguides by exploiting the optical bistability behavior due to thenonlinear Kerr effect. We used the transfer matrix analysis toinvestigate continuous wave propagation through microrings, as wellwe considered the nonlinear switching characteristics of an opticaldevice using a double-coupler silicon ring resonator in presence ofthe Kerr nonlinearity, thus obtaining the bistability behavior of theoutput port, the drop port and also inside the silicon microringresonator. It is shown that the bistability behavior depends on thecontrol of the input wavelength.KeywordsAll optical flip-flops, Kerr effect, microringresonator, optical bistability.

Keywords: All optical flip-flops, Kerr effect, microring resonator, optical bistability.

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Authors: Shuvro Chowdhury, Esmat Farzana, Rizvi Ahmed, A. T. M. Golam Sarwar, M. Ziaur Rahman Khan

Abstract:

The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness and adding doping impurities cause an increase in the threshold voltage. Moreover, the temperature effects cause a significant amount of threshold voltage shift. The temperature dependence of threshold voltage has also been observed with Self- Consistent approach which are well supported from experimental performance of practical devices.

Keywords: C-V characteristics, Self-Consistent Analysis, Siliconon-Insulator, Ultra-thin film.

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Authors: S. Kassou, R. El Mrabet, A. Belaaraj, P. Guionneau, N. Hadi, T. Lamcharfi

Abstract:

The organic–inorganic hybrid perovskite-like [C₆H₅C₂H₄NH₃]₂ZnCl₄ (PEA-ZnCl₄) was synthesized by saturated solutions method. X-ray powder diffraction, Raman spectroscopy, UV-visible transmittance, and capacitance meter measurements have been used to characterize the structure, the functional groups, the optical parameters, and the dielectric constants of the material. The material has a layered structure. The optical transmittance (T %) was recorded and applied to deduce the absorption coefficient (α) and optical band gap (Eg). The hybrid shows an insulator character with a direct band gap about 4.46 eV, and presents high dielectric constants up to a frequency of about 10⁵ Hz, which suggests a ferroelectric behavior. The reported optical and dielectric properties can help to understand the fundamental properties of perovskite materials and also to be used for optimizing or designing new devices.

Keywords: Dielectric constants, optical band gap (Eg), optical parameters, Raman spectroscopy, self-assembly organic inorganic hybrid.

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Authors: S. Thong-om, W. Payakcho, J. Grasasom, B. Marungsri

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This paper presents the experimental results of salt fog ageing test of silicone rubber housing material for outdoor polymer insulator based on IEC 61109. Four types of HTV silicone rubber sheet with different amount of ATH were tested continuously 1000<=hours in salt fog chamber. By visual observation after tested, slightly surface erosion was observed on tested specimen surface near the energized end. Furthermore, increasing in hardness and reduction in hydrophobicity were measured on tested specimen comparing with new specimen. In addition, chemical analysis by ATRFTIR was conducted in order to elucidate the chemical change of tested specimens comparing with new specimen. Physical and chemical results confirmed the experimental results as well.

Keywords: Accelerated ageing test, HTV silicone rubber, housing material, salt fog test, surface erosion, polymer insulator.

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Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

Although silicon photonic devices provide a significantly larger bandwidth and dissipate a substantially less power than the electronic devices, they suffer from a large size due to the fundamental diffraction limit and the weak optical response of Si. A potential solution is to exploit Si plasmonics, which may not only miniaturize the photonic device far beyond the diffraction limit, but also enhance the optical response in Si due to the electromagnetic field confinement. In this paper, we discuss and summarize the recently developed metal-insulator-Si-insulator-metal nanoplasmonic waveguide as well as various passive and active plasmonic components based on this waveguide, including coupler, bend, power splitter, ring resonator, MZI, modulator, detector, etc. All these plasmonic components are CMOS compatible and could be integrated with electronic and conventional dielectric photonic devices on the same SOI chip. More potential plasmonic devices as well as plasmonic nanocircuits with complex functionalities are also addressed.

Keywords: Silicon nanoplasmonics, Silicon nanophotonics, Onchip integration, CMOS

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Authors: Shobha Sharma, Amita Dev

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This research paper presents highly optimized barrel shifter at 22nm Hi K metal gate strained Si technology node. This barrel shifter is having a unique combination of static and dynamic body bias which gives lowest power delay product. This power delay product is compared with the same circuit at same technology node with static forward biasing at ‘supply/2’ and also with normal reverse substrate biasing and still found to be the lowest. The power delay product of this barrel sifter is .39362X10-17J and is lowered by approximately 78% to reference proposed barrel shifter at 32nm bulk CMOS technology. Power delay product of barrel shifter at 22nm Hi K Metal gate technology with normal reverse substrate bias is 2.97186933X10-17J and can be compared with this design’s PDP of .39362X10-17J. This design uses both static and dynamic substrate biasing and also has approximately 96% lower power delay product compared to only forward body biased at half of supply voltage. The NMOS model used are predictive technology models of Arizona state university and the simulations to be carried out using HSPICE simulator.

Keywords: Dynamic body biasing, highly optimized barrel shifter, PDP, Static body biasing.

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