%0 Journal Article
	%A Paniz Tafakori and  Ali A. Orouji
	%D 2013
	%J International Journal of Electrical and Computer Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 74, 2013
	%T Investigation of Multiple Material Gate Impact on Short Channel Effects and Reliability of Nanoscale SOI MOSFETs
	%U https://publications.waset.org/pdf/11808
	%V 74
	%X In this paper the features of multiple material gate
silicon-on-insulator MOSFETs are presented and compared with
single material gate silicon-on-insulator MOSFET structures. The
results indicate that the multiple material gate structures reduce short
channel effects such as drain induce barrier lowering, hot electron
effect and better current characteristics in comparison with single
material structures
	%P 128 - 131