Commenced in January 2007
Paper Count: 30054
Investigation of Multiple Material Gate Impact on Short Channel Effects and Reliability of Nanoscale SOI MOSFETs
Abstract:In this paper the features of multiple material gate silicon-on-insulator MOSFETs are presented and compared with single material gate silicon-on-insulator MOSFET structures. The results indicate that the multiple material gate structures reduce short channel effects such as drain induce barrier lowering, hot electron effect and better current characteristics in comparison with single material structures
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1077974Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF
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