Search results for: silicon carbide

Authors: Yong Seo Koo, Jong Ho Nam, Yong Nam Choi, Dae Yeol Yoo, Jung Woo Han

Abstract:

This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage.

Keywords: ESD (Electro-Static Discharge), SCR (Silicon Controlled Rectifier), holding Voltage.

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Authors: N. Sumathi, R. Srinivasa Rao

Abstract:

This paper presents the experimental results of 11 kV and 33 kV silicon composite insulators under artificial salt and urea polluted conditions. The tests were carried out under different seasons like summer, winter, and monsoon. The artificial pollution is prepared by properly dissolving the salt and urea in the water. The prepared salt and urea pollutions are sprayed on the insulators and dried up for sufficiently large time. The process is continued until a uniform layer is formed on the surface of insulator. For each insulator rating, four samples were tested. The maximum leakage current and breakdown voltage were measured. From experimental data, performance of test specimen is evaluated by comparing breakdown voltage and leakage current during different seasons when exposed to salt and urea polluted conditions. From these results the performance of the insulators can be predicted when they are installed in industrial, agricultural, and coastal areas. The experimental tests were carried out in the High Voltage laboratory using two stage cascade transformer having the rating of 1000 kVA, 500 kV.

Keywords: Silicon composite insulators, Urea pollution, Leakage current, Breakdown voltage, salt pollution, artificial pollution.

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Authors: Samy E. Oraby, Ayman M. Alaskari

Abstract:

The importance of machining process in today-s industry requires the establishment of more practical approaches to clearly represent the intimate and severe contact on the tool-chipworkpiece interfaces. Mathematical models are developed using the measured force signals to relate each of the tool-chip friction components on the rake face to the operating cutting parameters in rough turning operation using multilayers coated carbide inserts. Nonlinear modeling proved to have high capability to detect the nonlinear functional variability embedded in the experimental data. While feedrate is found to be the most influential parameter on the friction coefficient and its related force components, both cutting speed and depth of cut are found to have slight influence. Greater deformed chip thickness is found to lower the value of friction coefficient as the sliding length on the tool-chip interface is reduced.

Keywords: Mathematical modeling, Cutting forces, Frictionforces, Friction coefficient and Chip ratio.

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Authors: Samy E. Oraby, Ayman M. Alaskari

Abstract:

In recent years, scanning probe atomic force microscopy SPM AFM has gained acceptance over a wide spectrum of research and science applications. Most fields focuses on physical, chemical, biological while less attention is devoted to manufacturing and machining aspects. The purpose of the current study is to assess the possible implementation of the SPM AFM features and its NanoScope software in general machining applications with special attention to the tribological aspects of cutting tool. The surface morphology of coated and uncoated as-received carbide inserts is examined, analyzed, and characterized through the determination of the appropriate scanning setting, the suitable data type imaging techniques and the most representative data analysis parameters using the MultiMode SPM AFM in contact mode. The NanoScope operating software is used to capture realtime three data types images: “Height", “Deflection" and “Friction". Three scan sizes are independently performed: 2, 6, and 12 μm with a 2.5 μm vertical range (Z). Offline mode analysis includes the determination of three functional topographical parameters: surface “Roughness", power spectral density “PSD" and “Section". The 12 μm scan size in association with “Height" imaging is found efficient to capture every tiny features and tribological aspects of the examined surface. Also, “Friction" analysis is found to produce a comprehensive explanation about the lateral characteristics of the scanned surface. Configuration of many surface defects and drawbacks has been precisely detected and analyzed.

Keywords: SPM AFM contact mode, carbide inserts, scan size, surface defects, surface roughness, PSD.

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Authors: Bang-Shiuh Chen, Lien-Wen Chen

Abstract:

We have devised a thermal carpet cloak theoretically and implemented in silicon using layered metamaterial. The layered metamaterial is composed of single crystalline silicon and its phononic crystal. The design is based on a coordinate transformation. We demonstrate the result with numerical simulation. Great cloaking performance is achieved as a thermal insulator is well hidden under the thermal carpet cloak. We also show that the thermal carpet cloak can even the temperature on irregular surface. Using thermal carpet cloak to manipulate the heat conduction is effective because of its low complexity.

Keywords: Metamaterial, heat conduction, cloaking, phononic crystal.

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Authors: Shiyang Zhu, G. Q. Lo, D. L. Kwong

Abstract:

Silicon photonics is merging as a unified platform for driving photonic based telecommunications and for local photonic based interconnect but it suffers from large footprint as compared with the nanoelectronics. Plasmonics is an attractive alternative for nanophotonics. In this work, two CMOS compatible plasmonic waveguide platforms are compared. One is the horizontal metal-insulator-Si-insulator-metal nanoplasmonic waveguide and the other is metal-insulator-Si hybrid plasmonic waveguide. Various passive and active photonic devices have been experimentally demonstrated based on these two plasmonic waveguide platforms.

Keywords: Plasmonics, on-chip integration, Silicon photonics.

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Authors: Z. X. Chen, N. Singh, D.-L. Kwong

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This paper presents a vertical silicon nanowire n- MOSFET integrated with a CMOS-compatible fully-silicided (FUSI) NiSi2 gate. Devices with nanowire diameter of 50nm show good electrical performance (SS < 70mV/dec, DIBL < 30mV/V, Ion/Ioff > 107). Most significantly, threshold voltage tunability of about 0.2V is shown. Although threshold voltage remains low for the 50nm diameter device, it is expected to become more positive as nanowire diameter reduces.

Keywords: NiSi , fully-silicided (FUSI) gate, vertical siliconnanowire (SiNW), CMOS compatible.

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Authors: Zone-Ching Lin, Meng-Hua Lin, Ying-Chih Hsu

Abstract:

This paper uses quasi-steady molecular statics model and diamond tool to carry out simulation temperature rise of nanoscale orthogonal cutting single-crystal silicon. It further qualitatively analyzes temperature field of silicon workpiece without considering heat transfer and considering heat transfer. This paper supposes that the temperature rise of workpiece is mainly caused by two heat sources: plastic deformation heat and friction heat. Then, this paper develops a theoretical model about production of the plastic deformation heat and friction heat during nanoscale orthogonal cutting. After the increased temperature produced by these two heat sources are added up, the acquired total temperature rise at each atom of the workpiece is substituted in heat transfer finite difference equation to carry out heat transfer and calculates the temperature field in each step and makes related analysis.

Keywords: Quasi-steady molecular statics, Nanoscale orthogonal cutting, Finite difference, Temperature.

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Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

Abstract:

Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, Kink Effect, SILVACO TCAD.

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Authors: D.N Awang Sh'ri, E. Hamzah

Abstract:

The deposition of diamond films on a Si3N4 substrate is an attractive technique for industrial applications because of the excellent properties of diamond. Pretreatment of substrate is very important prior to diamond deposition to promote nucleation and adhesion between coating and substrate. Deposition of nanocrystalline diamonds films on silicon nitride substrate have been carried out by HF-CVD technique using mixture of methane and hydrogen gases. Different pretreatment of substrate including chemical etching consists of hot acid etching and basic etching and mechanical etching were used to study the quality of diamond formed on the substrate. The structure and morphology of diamond coating have been studied using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM) while diamond film quality has been characterized using Raman spectroscopy. AFM was used to investigate the effect of chemical etching and mechanical pretreatment on the surface roughness of the substrates and the resultant morphology of nanocrystalline diamond. It was found that diamond film deposited on as-received, basic etched and grinded substrate shows the morphology of cauliflower while blasted and acidic etched substrates produce smooth, continuous diamond film. However, the Raman investigation did not show any deviation in quality of diamond film for any pretreatment.

Keywords: Nanocrystalline diamond, Chemical VaporDeposition, Pretreatment, Silicon Nitride

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Authors: Jianwen Li, Hongfang Ma, Weixin Qian, Haitao Zhang, Weiyong Ying

Abstract:

Methanol-to-propylene conversion was carried out in a continuous-flow fixed-bed reactor over nano-sized HZSM-5 zeolites. The HZSM-5 catalysts were synthesized with different Si/Al ratio and silicon sources, and treated with NaOH. The structural property, morphology, and acidity of catalysts were measured by XRD, N₂ adsorption, FE-SEM, TEM, and NH₃-TPD. The results indicate that the increment of Si/Al ratio decreased the acidity of catalysts and then improved propylene selectivity, while silicon sources had slight impact on the acidity but affected the product distribution. The desilication after alkali treatment could increase intracrystalline mesopores and enhance propylene selectivity.

Keywords: Alkali treatment, HZSM-5, methanol-to-propylene, synthesis condition.

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Authors: S. Palaniyappan, P. K. Chennam, M. Trautmann, H. Ahmad, T. Mehner, T. Lampke, G. Wagner

Abstract:

In structural-health monitoring of fiber reinforced plastics (FRPs), every single inorganic fiber sensor that are integrated into the bulk material requires an electrical insulation around itself, when the surrounding reinforcing fibers are electrically conductive. This results in a more accurate data acquisition only from the sensor fiber without any electrical interventions. For this purpose, thin nano-films of aluminium oxide (Al₂O₃)-based electrical-insulation coatings have been fabricated around the Silicon Carbide (SiC) single fiber sensors through reactive DC magnetron sputtering technique. The sputtered coatings were amorphous in nature and the thickness of the coatings increased with an increase in the sputter time. Microstructural characterization of the coated fibers performed using scanning electron microscopy (SEM) confirmed a homogeneous circumferential coating with no detectable defects or cracks on the surface. X-ray diffraction (XRD) analyses of the as-sputtered and 2 hours annealed coatings (825 & 1125 ˚C) revealed the amorphous and crystalline phases of Al₂O₃ respectively. Raman spectroscopic analyses produced no characteristic bands of Al₂O₃, as the thickness of the films was in the nanometer (nm) range, which is too small to overcome the actual penetration depth of the laser used. In addition, the influence of the insulation coatings on the mechanical properties of the SiC sensor fibers has been analyzed.

Keywords: Al2O3 insulation coating, reactive sputtering, SiC single fiber sensor, single fiber tensile test.

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Authors: Smaali Assia, Outemzabet Ratiba, Media El Mahdi, Kadi Mohamed

Abstract:

Films of pure tin oxide SnO2 and in presence of antimony atoms (SnO2-Sb) deposited onto glass substrates have shown a sufficiently high energy gap to be transparent in the visible region, a high electrical mobility and a carrier concentration which displays a good electrical conductivity [1]. In this work, the effects of polycrystalline silicon substrate on the optical properties of pure and Sb doped tin oxide is investigated. We used the APCVD (atmospheric pressure chemical vapour deposition) technique, which is a low-cost and simple technique, under nitrogen ambient, for growing this material. A series of SnO2 and SnO2-Sb have been deposited onto polycrystalline silicon substrates with different contents of antimony atoms at the same conditions of deposition (substrate temperature, flow oxygen, duration and nitrogen atmosphere of the reactor). The effect of the substrate in terms of morphology and nonlinear optical properties, mainly the reflectance, was studied. The reflectance intensity of the device, compared to the reflectance of tin oxide films deposited directly on glass substrate, is clearly reduced on the overall wavelength range. It is obvious that the roughness of the poly-c silicon plays an important role by improving the reflectance and hence the optical parameters. A clear shift in the minimum of the reflectance upon doping level is observed. This minimum corresponds to strong free carrier absorption, resulting in different plasma frequency. This effect is followed by an increase in the reflectance depending of the antimony doping. Applying the extended Drude theory to the combining optical and electrical obtained results these effects are discussed.

Keywords: Doping, oxide, reflectance.

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Authors: T. Brettschneider, C. Dorrer, H. Suy, T. Braun, E. Jung, R. Hoofman, M. Bründel, R. Zengerle, F. Lärmer

Abstract:

We present an integration approach of a CMOS biosensor into a polymer based microfluidic environment suitable for mass production. It consists of a wafer-level-package for the silicon die and laser bonding process promoted by an intermediate hot melt foil to attach the sensor package to the microfluidic chip, without the need for dispensing of glues or underfiller. A very good condition of the sensing area was obtained after introducing a protection layer during packaging. A microfluidic flow cell was fabricated and shown to withstand pressures up to Δp = 780 kPa without leakage. The employed biosensors were electrically characterized in a dry environment.

Keywords: CMOS biosensor, laser bonding, silicon polymer integration, wafer level packaging.

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Authors: Dhairya Partap Sing, Vikram Singh, Sudhir Kumar

Abstract:

This investigation proposes Friction stir welding technique to solve the fusion welding problems. Objectives of this investigation are fabrication of AA7075-10%wt. Silicon carbide (SiC) aluminum metal matrix composite and optimization of optimal process parameters of friction stir welded AA7075-10%wt. SiC Composites. Composites were prepared by the mechanical stir casting process. Experiments were performed with four process parameters such as tool rotational speed, weld speed, axial force and tool geometry considering three levels of each. The quality characteristics considered is joint efficiency (JE). The welding experiments were conducted using L₂₇ orthogonal array. An orthogonal array and design of experiments were used to give best possible welding parameters that give optimal JE. The fabricated welded joints using rotational speed of 1500 rpm, welding speed (1.3 mm/sec), axial force (7 k/n) of and tool geometry (square) give best possible results. Experimental result reveals that the tool rotation speed, welding speed and axial force are the significant process parameters affecting the welding performance. The predicted optimal value of percentage JE is 95.621. The confirmation tests also have been done for verifying the results.

Keywords: Metal matrix composite, axial force, joint efficiency, rotational speed, traverse speed, tool geometry.

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Authors: Muhibul Haque Bhuyan

Abstract:

This paper reports on the impact study with the variation of the gate insulation material and thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate materials used here are silicon dioxide (SiO₂), aluminum silicate (Al₂SiO₅), silicon nitride (Si₃N₄), alumina (Al₂O₃), hafnium silicate (HfSiO₄), tantalum pentoxide (Ta₂O₅), hafnium dioxide (HfO₂), zirconium dioxide (ZrO₂), and lanthanum oxide (La₂O₃) upon a p-type silicon substrate material. The gate insulation thickness was varied from 2.0 nm to 3.5 nm for a 50 nm channel length pocket implanted n-MOSFET. There are several models available for this device. We have studied and simulated threshold voltage model incorporating drain and substrate bias effects, surface potential, inversion layer charge, pinch-off voltage, effective electric field, inversion layer mobility, and subthreshold drain current models based on two linear symmetric pocket doping profiles. We have changed the values of the two parameters, viz. gate insulation material and thickness gradually fixing the other parameter at their typical values. Then we compared and analyzed the simulation results. This study would be helpful for the nano-scaled MOS device designers for various applications to predict the device behavior.

Keywords: Linear symmetric pocket profile, pocket implanted n-MOS Device, model, impact of gate material, insulator thickness.

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Authors: V. E. Messerle, O. A. Lavrichshev, A. B. Ustimenko

Abstract:

The article presents a plasma chemical technology for processing solid fuels, using examples of bituminous and brown coals. Thermodynamic and experimental investigation of the technology was made. The technology allows producing synthesis gas from the coal organic mass and valuable components (technical silicon, ferrosilicon, aluminum, and carbon silicon, as well as microelements of rare metals, such as uranium, molybdenum, vanadium, etc.) from the mineral mass. The thusly produced highcalorific synthesis gas can be used for synthesis of methanol, as a high-calorific reducing gas instead of blast-furnace coke as well as power gas for thermal power plants.

Keywords: Gasification, mineral mass, organic mass, plasma, processing, solid fuel, synthesis gas, valuable components.

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Authors: Kyoung-il Do, Byung-seok Lee, Hee-guk Chae, Jeong-yun Seo Yong-seo Koo

Abstract:

In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage.

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Authors: Tania Bose, Minto Rattan, Neeraj Chamoli

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In this paper, an attempt has been made to study the effect of thermal gradation on the steady-state creep behavior of rotating isotropic disc made of functionally graded material using threshold stress based Sherby’s creep law. The composite discs made of aluminum matrix reinforced with silicon carbide particulate have been taken for analysis. The stress and strain rate distributions have been calculated for the discs rotating at elevated temperatures having thermal gradation. The material parameters of creep vary radially and have been estimated by regression fit of the available experimental data. Investigations for discs made up of linearly increasing particle content operating under linearly decreasing temperature from inner to outer radii have been done using von Mises’ yield criterion. The results are displayed and compared graphically in designer friendly format for the above said disc profile with the disc made of particle reinforced composite operating under uniform temperature profile. It is observed that radial and tangential stresses show minor variation and the strain rates vary significantly in the presence of thermal gradation as compared to disc having uniform temperature.

Keywords: Creep, functionally graded isotropic material, steady-state, thermal gradation.

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Authors: Hamed Bagheri, Seyd Javid Shariati

Abstract:

The effects of type and amount of solvent on lubricant which is used in disposable medical devices are investigated in this article. Two kinds of common solvent, n-Hexane and n-Heptane, are used. The mechanical behavior of syringe has shown that n-Heptane has better mixing ratio and also more effective spray process in the barrel of syringe than n-Hexane because of similar solubility parameter to silicon oil. The results revealed that movement of plunger in the barrel increases when pure silicone is used because non-uniform film is created on the surface of barrel, and also, it seems that the form of silicon is converted from oil to gel due to sterilization process. The results showed that the convenient mixing ratio of solvent/lubricant oil is 80/20.

Keywords: Disposable medical devices, lubricant oil, solvent effect, solubility parameter.

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Authors: N. Das, N. Samanta, L. Pandey, C. Roy Chaudhuri

Abstract:

Early diagnosis of infection like Hep-B virus in blood is important for low cost medical treatment. For this purpose, it is desirable to develop a point of care device which should be able to detect trace quantities of the target molecule in blood. In this paper, we report a nanoporous silicon oxide sensor which is capable of detecting down to 1fM concentration of Hep-B surface antigen in blood without the requirement of any centrifuge or pre-concentration. This has been made possible by the presence of resonant peak in the sensitivity characteristics. This peak is observed to be dependent only on the concentration of the specific antigen and not on the interfering species in blood serum. The occurrence of opposite impedance change within the pores and at the bottom of the pore is responsible for this effect. An electronic interface has also been designed to provide a display of the virus concentration.

Keywords: Impedance spectroscopy, Ultrasensitive detection in blood, Peak frequency, Electronic interface.

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Authors: Chih Chin Yang, Lan Hui Huang, Bo Shum Chen, Jia Liang Ke, Chung Lun Tsai

Abstract:

The control of oxygen flow rate during growth of titanium dioxide by mass flow controller in DC plasma sputtering growth system is studied. The impedance of TiO2 films for inductance effect is influenced by annealing time and oxygen flow rate. As annealing time is increased, the inductance of TiO2 film is the more. The growth condition of optimum and maximum inductance for TiO2 film to serve as sensing device are oxygen flow rate of 15 sccm and large annealing time. The large inductance of TiO2 film will be adopted to fabricate the biosensor to obtain the high sensitivity of sensing in biology.

Keywords: Annealed, Inductance, Silicon substarte, Titanium dioxide

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Authors: K.Kadirgama, M.M.Noor, K.A. Abou-El-Hossein, H.H.Habeeb, M.M. Rahman, B.Mohamad, R.A. Bakar

Abstract:

Cutting fluids, usually in the form of a liquid, are applied to the chip formation zone in order to improve the cutting conditions. Cutting fluid can be expensive and represents a biological and environmental hazard that requires proper recycling and disposal, thus adding to the cost of the machining operation. For these reasons dry cutting or dry machining has become an increasingly important approach; in dry machining no coolant or lubricant is used. This paper discussed the effect of the dry cutting on cutting force and tool life when machining aerospace materials (Haynes 242) with using two different coated carbide cutting tools (TiAlN and TiN/MT-TiCN/TiN). Response surface method (RSM) was used to minimize the number of experiments. ParTiAlN Swarm Optimisation (PSO) models were developed to optimize the machining parameters (cutting speed, federate and axial depth) and obtain the optimum cutting force and tool life. It observed that carbide cutting tool coated with TiAlN performed better in dry cutting compared with TiN/MT-TiCN/TiN. On other hand, TiAlN performed more superior with using of 100 % water soluble coolant. Due to the high temperature produced by aerospace materials, the cutting tool still required lubricant to sustain the heat transfer from the workpiece.

Keywords: Dry cutting, partial swarm optimisation, response surface method, tool life

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Authors: Shubhajit Roy Chowdhury, Aritra Banerjee, Aniruddha Roy, Hiranmay Saha

Abstract:

The paper proposes the novel design of a 3T XOR gate combining complementary CMOS with pass transistor logic. The design has been compared with earlier proposed 4T and 6T XOR gates and a significant improvement in silicon area and power-delay product has been obtained. An eight transistor full adder has been designed using the proposed three-transistor XOR gate and its performance has been investigated using 0.15um and 0.35um technologies. Compared to the earlier designed 10 transistor full adder, the proposed adder shows a significant improvement in silicon area and power delay product. The whole simulation has been carried out using HSPICE.

Keywords: XOR gate, full adder, improvement in speed, area minimization, transistor count minimization.

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Authors: V. Spaeth, A. Djerbi-Tegguer

Abstract:

The recycling of concrete, bricks and masonry rubble as concrete aggregates is an important way to contribute to a sustainable material flow. However, there are still various uncertainties limiting the widespread use of Recycled Concrete Aggregates (RCA). The fluctuations in the composition of grade recycled aggregates and their influence on the properties of fresh and hardened concrete are of particular concern regarding the use of RCA. Most of problems occurring while using recycled concrete aggregates as aggregates are due to higher porosity and hence higher water absorption, lower mechanical strengths, residual impurities on the surface of the RCA forming weaker bond between cement paste and aggregate. So, the reuse of RCA is still limited. Efficient polymer based treatment is proposed in order to reuse RCA easier. The silicon-based polymer treatments of RCA were carried out and were compared. This kind of treatment can improve the properties of RCA such as the rate of water absorption on treated RCA is significantly reduced.

Keywords: Recycled concrete aggregates, water absorption, silicon-based agent and polymer.

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Authors: M. Mika, L. Pina, M. Landova, L. Sveda, R. Havlikova, V. Marsikova, R. Hudec, A. Inneman

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Future astronomical projects on large space x-ray imaging telescopes require novel substrates and technologies for the construction of their reflecting mirrors. The mirrors must be lightweight and precisely shaped to achieve large collecting area with high angular resolution. The new materials and technologies must be cost-effective. Currently, the most promising materials are glass or silicon foils. We focused on precise shaping these foils by thermal forming process. We studied free and forced slumping in the temperature region of hot plastic deformation and compared the shapes obtained by the different slumping processes. We measured the shapes and the surface quality of the foils. In the experiments, we varied both heat-treatment temperature and time following our experiment design. The obtained data and relations we can use for modeling and optimizing the thermal forming procedure.

Keywords: Glass, silicon, thermal forming, x-ray

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Authors: G. H. Li, M. Liu, H. J. Qi, Q. Zhu, W. Z. He

Abstract:

The drilling and riveting processes are widely used in the assembly of carrier rocket, which makes the efficiency and quality of drilling become the important factor affecting the assembly process. According to the problem existing in the drilling of thick stacked plate (thickness larger than 10mm) of carrier rocket, such as drill break, large noise and burr etc., experimental study of the influence of tool material on the drilling was carried out. The cutting force was measured by a piezoelectric dynamometer, the aperture was measured with an outline projector, and the burr is observed and measured by a digital stereo microscope. Through the measurement, the effects of tool material on the drilling were analyzed from the aspects of drilling force, diameter, and burr. The results show that, compared with carbide drill and coated carbide one, the drilling force of high speed steel is larger. But, the application of high speed steel also has some advantages, e.g. a higher number of hole can be obtained, the height of burr is small, the exit is smooth and the slim burr is less, and the tool experiences wear but not fracture. Therefore, the high speed steel tool is suitable for the drilling of thick stacked plate of 2219 Aluminum alloy.

Keywords: 2219 aluminum alloy, thick stacked plate, drilling, tool material.

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Authors: Sang Hoon Lee, Tae Il Lee, Su Jeong Lee, Jae Min Myoung

Abstract:

In order to manufacture short gap single Si nanowire (NW) field effect transistor (FET) by imprinting and transferring method, we introduce the method using Al2O3 sacrificial layer. The diameters of cylindrical Si NW addressed between Au electrodes by dielectrophoretic (DEP) alignment method are controlled to 106, 128, and 148 nm. After imprinting and transfer process, cylindrical Si NW is embedded in PVP adhesive and dielectric layer. By curing transferred cylindrical Si NW and Au electrodes on PVP-coated p++ Si substrate with 200nm-thick SiO2, 3μm gap Si NW FET fabrication was completed. As the diameter of embedded Si NW increases, the mobility of FET increases from 80.51 to 121.24 cm2/V·s and the threshold voltage moves from –7.17 to –2.44 V because the ratio of surface to volume gets reduced.

Keywords: Al2O3 Sacrificial transfer layer, cylindrical silicon nanowires, Dielectrophorestic alignment, Field effect transistor.

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Authors: M. Sari Yilmaz, N. Karamahmut Mermer

Abstract:

Coal fly ash is formed as a solid waste product from the combustion of coal in coal fired power stations. Huge amounts of fly ash are produced globally every year and are predicted to increase. Nowadays, less than half of the fly ash is used as a raw material for cement manufacturing, construction and the rest of it is disposed as a waste causing yet another environmental concern. For this reason, the recycling of this kind of slurries into useful materials is quite important in terms of economical and environmental aspects. The purpose of this study is to evaluate the Orhaneli and Tuncbilek coal fly ashes for utilization in some industrial applications. Therefore the mineralogical and chemical compositions of these fly ashes were analyzed by X-ray fluorescence spectroscopy, ourier-transform infrared spectrometer, and X-ray diffraction. The silicon (Si) and aluminum (Al) in the fly ashes were activated by alkali fusion technique with sodium hydroxide. The obtained extracts were analyzed for Si and Al content by inductively coupled plasma optical emission spectrometry.

Keywords: Extraction, Fly ash, Fusion, XRD.

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Authors: Shuvro Chowdhury, Esmat Farzana, Rizvi Ahmed, A. T. M. Golam Sarwar, M. Ziaur Rahman Khan

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The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness and adding doping impurities cause an increase in the threshold voltage. Moreover, the temperature effects cause a significant amount of threshold voltage shift. The temperature dependence of threshold voltage has also been observed with Self- Consistent approach which are well supported from experimental performance of practical devices.

Keywords: C-V characteristics, Self-Consistent Analysis, Siliconon-Insulator, Ultra-thin film.

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