Search results for: Field effect transistor.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 6616

Search results for: Field effect transistor.

6556 Measurement and Analysis of Temperature Effects on Box Girders of Continuous Rigid Frame Bridges

Authors: Bugao Wang, Weifeng Wang, Xianwei Zeng

Abstract:

Researches on the general rules of temperature field changing and their effects on the bridge in construction are necessary. This paper investigated the rules of temperature field changing and its effects on bridge using onsite measurement and computational analysis. Guanyinsha Bridge was used as a case study in this research. The temperature field was simulated in analyses. The effects of certain boundary conditions such as sun radiance, wind speed, and model parameters such as heat factor and specific heat on temperature field are investigated. Recommended values for these parameters are proposed. The simulated temperature field matches the measured observations with high accuracy. At the same time, the stresses and deflections of the bridge computed with the simulated temperature field matches measured values too. As a conclusion, the temperature effect analysis of reinforced concrete box girder can be conducted directly based on the reliable weather data of the concerned area.

Keywords: continuous rigid frame bridge, temperature effectanalysis, temperature field, temperature field simulation

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6555 Replacing MOSFETs with Single Electron Transistors (SET) to Reduce Power Consumption of an Inverter Circuit

Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

Abstract:

According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling.

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6554 Investigation of Corona wind Effect on Heat and Mass Transfer Enhancement

Authors: R.Karami, B.Kamkari, K.Kashefi

Abstract:

Applying corona wind as a novel technique can lead to a great level of heat and mass transfer augmentation by using very small amount of energy. Enhancement of forced flow evaporation rate by applying electric field (corona wind) has been experimentally evaluated in this study. Corona wind produced by a fine wire electrode which is charged with positive high DC voltage impinges to water surface and leads to evaporation enhancement by disturbing the saturated air layer over water surface. The study was focused on the effect of corona wind velocity, electrode spacing and air flow velocity on the level of evaporation enhancement. Two sets of experiments, i.e. with and without electric field, have been conducted. Data obtained from the first experiment were used as reference for evaluation of evaporation enhancement at the presence of electric field. Applied voltages ranged from corona threshold voltage to spark over voltage at 1 kV increments. The results showed that corona wind has great enhancement effect on water evaporation rate, but its effectiveness gradually diminishes by increasing air flow velocity. Maximum enhancements were 7.3 and 3.6 for air velocities of 0.125 and 1.75 m/s, respectively.

Keywords: Electrohydodynamics (EHD), corona wind, high electric field, Evaporation enhancement

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6553 Single-qubit Quantum Gates using Magneto-optic Kerr Effect

Authors: Pradeep Kumar K

Abstract:

We propose the use of magneto-optic Kerr effect (MOKE) to realize single-qubit quantum gates. We consider longitudinal and polar MOKE in reflection geometry in which the magnetic field is parallel to both the plane of incidence and surface of the film. MOKE couples incident TE and TM polarized photons and the Hamiltonian that represents this interaction is isomorphic to that of a canonical two-level quantum system. By varying the phase and amplitude of the magnetic field, we can realize Hadamard, NOT, and arbitrary phase-shift single-qubit quantum gates. The principal advantage is operation with magnetically non-transparent materials.

Keywords: Quantum computing, qubit, magneto-optic kerr effect (MOKE), magneto-optical interactions, continuous variables.

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6552 Influence of Axial Magnetic Field on the Electrical Breakdown and Secondary Electron Emission in Plane-Parallel Plasma Discharge

Authors: Sabah I. Wais, Raghad Y. Mohammed, Sedki O. Yousif

Abstract:

The influence of axial magnetic field (B=0.48 T) on the variation of ionization efficiency coefficient h and secondary electron emission coefficient g with respect to reduced electric field E/P is studied at a new range of plane-parallel electrode spacing (0< d< 20 cm) and different nitrogen working pressure between 0.5-20 Pa. The axial magnetic field is produced from an inductive copper coil of radius 5.6 cm. The experimental data of breakdown voltage is adopted to estimate the mean Paschen curves at different working features. The secondary electron emission coefficient is calculated from the mean Paschen curve and used to determine the minimum breakdown voltage. A reduction of discharge voltage of about 25% is investigated by the applied of axial magnetic field. At high interelectrode spacing, the effect of axial magnetic field becomes more significant for the obtained values of h but it was less for the values of g.

Keywords: Paschen curve, Townsend coefficient, Secondaryelectron emission, Magnetic field, Minimum breakdown voltage.

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6551 Studying the Temperature Field of Hypersonic Vehicle Structure with Aero-Thermo-Elasticity Deformation

Authors: Geng Xiangren, Liu Lei, Gui Ye-Wei, Tang Wei, Wang An-ling

Abstract:

The malfunction of thermal protection system (TPS) caused by aerodynamic heating is a latent trouble to aircraft structure safety. Accurately predicting the structure temperature field is quite important for the TPS design of hypersonic vehicle. Since Thornton’s work in 1988, the coupled method of aerodynamic heating and heat transfer has developed rapidly. However, little attention has been paid to the influence of structural deformation on aerodynamic heating and structural temperature field. In the flight, especially the long-endurance flight, the structural deformation, caused by the aerodynamic heating and temperature rise, has a direct impact on the aerodynamic heating and structural temperature field. Thus, the coupled interaction cannot be neglected. In this paper, based on the method of static aero-thermo-elasticity, considering the influence of aero-thermo-elasticity deformation, the aerodynamic heating and heat transfer coupled results of hypersonic vehicle wing model were calculated. The results show that, for the low-curvature region, such as fuselage or center-section wing, structure deformation has little effect on temperature field. However, for the stagnation region with high curvature, the coupled effect is not negligible. Thus, it is quite important for the structure temperature prediction to take into account the effect of elastic deformation. This work has laid a solid foundation for improving the prediction accuracy of the temperature distribution of aircraft structures and the evaluation capacity of structural performance.

Keywords: Aero-thermo-elasticity, elastic deformation, structural temperature, multi-field coupling.

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6550 Fractional-Order Modeling of GaN High Electron Mobility Transistors for Switching Applications

Authors: Anwar H. Jarndal, Ahmed S. Elwakil

Abstract:

In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device measurements are implemented to extract parasitic inductances and resistances. The model shows very good simulation for S-parameter measurements under different bias conditions. It has been found that this approach can improve the simulation of intrinsic part of the transistor, which is very important for small- and large-signal modeling process.

Keywords: Fractional-order modeling, GaN HEMT, Si-substrate, open de-embedding structure.

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6549 A Refined Nonlocal Strain Gradient Theory for Assessing Scaling-Dependent Vibration Behavior of Microbeams

Authors: Xiaobai Li, Li Li, Yujin Hu, Weiming Deng, Zhe Ding

Abstract:

A size-dependent Euler–Bernoulli beam model, which accounts for nonlocal stress field, strain gradient field and higher order inertia force field, is derived based on the nonlocal strain gradient theory considering velocity gradient effect. The governing equations and boundary conditions are derived both in dimensional and dimensionless form by employed the Hamilton principle. The analytical solutions based on different continuum theories are compared. The effect of higher order inertia terms is extremely significant in high frequency range. It is found that there exists an asymptotic frequency for the proposed beam model, while for the nonlocal strain gradient theory the solutions diverge. The effect of strain gradient field in thickness direction is significant in low frequencies domain and it cannot be neglected when the material strain length scale parameter is considerable with beam thickness. The influence of each of three size effect parameters on the natural frequencies are investigated. The natural frequencies increase with the increasing material strain gradient length scale parameter or decreasing velocity gradient length scale parameter and nonlocal parameter.

Keywords: Euler-Bernoulli Beams, free vibration, higher order inertia, nonlocal strain gradient theory, velocity gradient.

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6548 A Parametric Study on Deoiling Hydrocyclones Flow Field

Authors: Maysam Saidi, Reza Maddahian, Bijan Farhanieh

Abstract:

Hydrocyclones flow field study is conducted by performing a parametric study. Effect of cone angle on deoiling hydrocyclones flow behaviour is studied in this research. Flow field of hydrocyclone is obtained by three-dimensional simulations with OpenFOAM code. Because of anisotropic behaviour of flow inside hydrocyclones LES is a suitable method to predict the flow field since it resolves large scales and model isotropic small scales. Large eddy simulation is used to predict the flow behavior of three different cone angles. Differences in tangential velocity and pressure distribution are reported in some figures.

Keywords: Deoiling hydrocyclones, Flow field, Hydrocyclone cone angle, Large Eddy Simulation, Pressure distribution

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6547 A Novel Low Power, High Speed 14 Transistor CMOS Full Adder Cell with 50% Improvement in Threshold Loss Problem

Authors: T. Vigneswaran, B. Mukundhan, P. Subbarami Reddy

Abstract:

Full adders are important components in applications such as digital signal processors (DSP) architectures and microprocessors. In addition to its main task, which is adding two numbers, it participates in many other useful operations such as subtraction, multiplication, division,, address calculation,..etc. In most of these systems the adder lies in the critical path that determines the overall speed of the system. So enhancing the performance of the 1-bit full adder cell (the building block of the adder) is a significant goal.Demands for the low power VLSI have been pushing the development of aggressive design methodologies to reduce the power consumption drastically. To meet the growing demand, we propose a new low power adder cell by sacrificing the MOS Transistor count that reduces the serious threshold loss problem, considerably increases the speed and decreases the power when compared to the static energy recovery full (SERF) adder. So a new improved 14T CMOS l-bit full adder cell is presented in this paper. Results show 50% improvement in threshold loss problem, 45% improvement in speed and considerable power consumption over the SERF adder and other different types of adders with comparable performance.

Keywords: Arithmetic circuit, full adder, multiplier, low power, very Large-scale integration (VLSI).

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6546 Investigation of Threshold Voltage Shift in Gamma Irradiated N-Channel and P-Channel MOS Transistors of CD4007

Authors: S. Boorboor, S. A. H. Feghhi, H. Jafari

Abstract:

The ionizing radiations cause different kinds of damages in electronic components. MOSFETs, most common transistors in today’s digital and analog circuits, are severely sensitive to TID damage. In this work, the threshold voltage shift of CD4007 device, which is an integrated circuit including P-channel and N-channel MOS transistors, was investigated for low dose gamma irradiation under different gate bias voltages. We used linear extrapolation method to extract threshold voltage from ID-VG characteristic curve. The results showed that the threshold voltage shift was approximately 27.5 mV/Gy for N-channel and 3.5 mV/Gy for P-channel transistors at the gate bias of |9 V| after irradiation by Co-60 gamma ray source. Although the sensitivity of the devices under test were strongly dependent to biasing condition and transistor type, the threshold voltage shifted linearly versus accumulated dose in all cases. The overall results show that the application of CD4007 as an electronic buffer in a radiation therapy system is limited by TID damage. However, this integrated circuit can be used as a cheap and sensitive radiation dosimeter for accumulated dose measurement in radiation therapy systems.

Keywords: Threshold voltage shift, MOS transistor, linear extrapolation, gamma irradiation.

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6545 Structure and Morphology of Electrodeposited Nickel Nanowires at an Electrode Distance of 20mm

Authors: Mahendran Samykano, Ram Mohan, Shyam Aravamudhan

Abstract:

The objective of this work is to study the effect of two key factors - external magnetic field and applied current density during template-based electrodeposition of nickel nanowires using an electrode distance of 20 mm. Morphology, length, crystallite size and crystallographic characterization of the grown nickel nanowires at an electrode distance of 20mm are presented. For this electrode distance of 20 mm, these two key electrodeposition factors when coupled was found to reduce crystallite size with a higher growth length and preferred orientation of Ni crystals. These observed changes can be inferred to be due to coupled interaction forces induced by the intensity of applied electric field (current density) and external magnetic field known as magnetohydrodynamic (MHD) effect during the electrodeposition process.

Keywords: Anodic alumina oxide, electrodeposition, nanowires, nickel.

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6544 Dynamic Variation in Nano-Scale CMOS SRAM Cells Due to LF/RTS Noise and Threshold Voltage

Authors: M. Fadlallah, G. Ghibaudo, C. G. Theodorou

Abstract:

The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.

Keywords: Low-frequency noise, Random Telegraph Noise, Dynamic Variation, SRRV.

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6543 Hydrothermal Behavior of G-S Magnetically Stabilized Beds Consisting of Magnetic and Non-Magnetic Admixtures

Authors: Z. Al-Qodah, M. Al-Busoul, A. Khraewish

Abstract:

The hydrothermal behavior of a bed consisting of magnetic and shale oil particle admixtures under the effect of a transverse magnetic field is investigated. The phase diagram, bed void fraction are studied under wide range of the operating conditions i.e., gas velocity, magnetic field intensity and fraction of the magnetic particles. It is found that the range of the stabilized regime is reduced as the magnetic fraction decreases. In addition, the bed voidage at the onset of fluidization decreases as the magnetic fraction decreases. On the other hand, Nusselt number and consequently the heat transfer coefficient is found to increase as the magnetic fraction decreases. An empirical equation is investigated to relate the effect of the gas velocity, magnetic field intensity and fraction of the magnetic particles on the heat transfer behavior in the bed.

Keywords: Magnetic stabilization; Magnetic stabilized fluidizedbeds; Gas-fluidized beds.

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6542 Combined Effect of Moving and Open Boundary Conditions in the Simulation of Inland Inundation Due to Far Field Tsunami

Authors: M. Ashaque Meah, Md. Fazlul Karim, M. Shah Noor, Nazmun Nahar Papri, M. Khalid Hossen, M. Ismoen

Abstract:

Tsunami and inundation modelling due to far field tsunami propagation in a limited area is a very challenging numerical task because it involves many aspects such as the formation of various types of waves and the irregularities of coastal boundaries. To compute the effect of far field tsunami and extent of inland inundation due to far field tsunami along the coastal belts of west coast of Malaysia and Southern Thailand, a formulated boundary condition and a moving boundary condition are simultaneously used. In this study, a boundary fitted curvilinear grid system is used in order to incorporate the coastal and island boundaries accurately as the boundaries of the model domain are curvilinear in nature and the bending is high. The tsunami response of the event 26 December 2004 along the west open boundary of the model domain is computed to simulate the effect of far field tsunami. Based on the data of the tsunami source at the west open boundary of the model domain, a boundary condition is formulated and applied to simulate the tsunami response along the coastal and island boundaries. During the simulation process, a moving boundary condition is initiated instead of fixed vertical seaside wall. The extent of inland inundation and tsunami propagation pattern are computed. Some comparisons are carried out to test the validation of the simultaneous use of the two boundary conditions. All simulations show excellent agreement with the data of observation.

Keywords: Open boundary condition, moving boundary condition, boundary-fitted curvilinear grids, far field tsunami, Shallow Water Equations, tsunami source, Indonesian tsunami of 2004.

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6541 Hardware Description Language Design of Σ-Δ Fractional-N Phase-Locked Loop for Wireless Applications

Authors: Ahmed El Oualkadi, Abdellah Ait Ouahman

Abstract:

This paper discusses a systematic design of a Σ-Δ fractional-N Phase-Locked Loop based on HDL behavioral modeling. The proposed design consists in describing the mixed behavior of this PLL architecture starting from the specifications of each building block. The HDL models of critical PLL blocks have been described in VHDL-AMS to predict the different specifications of the PLL. The effect of different noise sources has been efficiently introduced to study the PLL system performances. The obtained results are compared with transistor-level simulations to validate the effectiveness of the proposed models for wireless applications in the frequency range around 2.45 GHz.

Keywords: Phase-locked loop, frequency synthesizer, fractional-N PLL, Σ-Δ modulator, HDL models

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6540 Noise Performance of Magnetic Field Tunable Avalanche Transit Time Source

Authors: Partha Banerjee, Aritra Acharyya, Arindam Biswas, A. K. Bhattacharjee, Amit Banerjee, Hiroshi Inokawa

Abstract:

The effect of magnetic field on the noise performance of the magnetic field tunable avalanche transit time (MAGTATT) device based on Si, designed to operate at W-band (75 – 110 GHz), has been studied in this paper. A comprehensive two-dimensional (2D) model has been developed. The simulation results show that due to the presence of applied external transverse magnetic field, both the noise spectral density and noise measure of the MAGTATT device increase significantly. The noise performance of the device has been found to be further deteriorated if the magnetic field strength is further increased. Hence, in order to achieve the magnetic field tuning of the radio frequency (RF) properties of impact avalanche transit time (IMPATT) source, the noise performance of it has to be sacrificed in fair extent. Moreover, it clearly indicates that an IMPATT source must be covered with appropriate magnetic shielding material to avoid undesirable shift in operating frequency and output power and objectionable amount of deterioration in noise performance due to the presence of external magnetic field.

Keywords: 2-D model, IMPATT, MAGTATT, mm-wave, noise performance.

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6539 Robust & Energy Efficient Universal Gates for High Performance Computer Networks at 22nm Process Technology

Authors: M. Geetha Priya, K. Baskaran, S. Srinivasan

Abstract:

Digital systems are said to be constructed using basic logic gates. These gates are the NOR, NAND, AND, OR, EXOR & EXNOR gates. This paper presents a robust three transistors (3T) based NAND and NOR gates with precise output logic levels, yet maintaining equivalent performance than the existing logic structures. This new set of 3T logic gates are based on CMOS inverter and Pass Transistor Logic (PTL). The new universal logic gates are characterized by better speed and lower power dissipation which can be straightforwardly fabricated as memory ICs for high performance computer networks. The simulation tests were performed using standard BPTM 22nm process technology using SYNOPSYS HSPICE. The 3T NAND gate is evaluated using C17 benchmark circuit and 3T NOR is gate evaluated using a D-Latch. According to HSPICE simulation in 22 nm CMOS BPTM process technology under given conditions and at room temperature, the proposed 3T gates shows an improvement of 88% less power consumption on an average over conventional CMOS logic gates. The devices designed with 3T gates will make longer battery life by ensuring extremely low power consumption.

Keywords: Low power, CMOS, pass-transistor, flash memory, logic gates.

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6538 Effect of Electromagnetic Fields on Structure and Pollen Grains Development in Chenopodium album L

Authors: Leila Amjad, Mahsa Shafighi

Abstract:

The role of the pollen grain, with to the reproductive process of higher plants, is to deliver the spermatic cells to the embryo sac for egg fertilization. The aim of this project was study the effect of electromagnetic fields on structure and pollen grains development in Chenopodium album. Anthers of Chenopodium album L. were collected at different stages of development from control (without electromagnetic field) and plants grown at 10m from the field sources. Structure and development of pollen grains were studied and compared. The studying pollen structure by Light and Scanning electron microscopy showed that electromagnetic fields reduction of pollen grains number and male sterility, thus , in some anthers, pollen grains were attached together and deformed compared to control ones. The data presented suggest that prolonged exposures of plants to magnetic field may cause different biological effects at the cellular tissue and organ levels.

Keywords: Electromagnetic fields, pollen, Chenopodium albumL.

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6537 Geometric Modeling of Illumination on the TFT-LCD Panel using Bezier Surface

Authors: Kyong-min Lee, Moon Soo Chang, PooGyeon Park

Abstract:

In this paper, we propose a geometric modeling of illumination on the patterned image containing etching transistor. This image is captured by a commercial camera during the inspection of a TFT-LCD panel. Inspection of defect is an important process in the production of LCD panel, but the regional difference in brightness, which has a negative effect on the inspection, is due to the uneven illumination environment. In order to solve this problem, we present a geometric modeling of illumination consisting of an interpolation using the least squares method and 3D modeling using bezier surface. Our computational time, by using the sampling method, is shorter than the previous methods. Moreover, it can be further used to correct brightness in every patterned image.

Keywords: Bezier, defect, geometric modeling, illumination, inspection, LCD, panel.

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6536 The Calculation of Electromagnetic Fields (EMF) in Substations of Shopping Centers

Authors: Adnan Muharemovic, Hidajet Salkic, Mario Klaric, Irfan Turkovic, Aida Muharemovic

Abstract:

In nature, electromagnetic fields always appear like atmosphere static electric field, the earth's static magnetic field and the wide-rang frequency electromagnetic field caused by lightening. However, besides natural electromagnetic fields (EMF), today human beings are mostly exposed to artificial electromagnetic fields due to technology progress and outspread use of electrical devices. To evaluate nuisance of EMF, it is necessary to know field intensity for every frequency which appears and compare it with allowed values. Low frequency EMF-s around transmission and distribution lines are time-varying quasi-static electromagnetic fields which have conservative component of low frequency electrical field caused by charges and eddy component of low frequency magnetic field caused by currents. Displacement current or field delay are negligible, so energy flow in quasi-static EMF involves diffusion, analog like heat transfer. Electrical and magnetic field can be analyzed separately. This paper analysis the numerical calculations in ELF-400 software of EMF in distribution substation in shopping center. Analyzing the results it is possible to specify locations exposed to the fields and give useful suggestion to eliminate electromagnetic effect or reduce it on acceptable level within the non-ionizing radiation norms and norms of protection from EMF.

Keywords: Electromagnetic Field, Density of Electromagnetic Flow, Place of Proffesional Exposure, Place of Increased Sensitivity

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6535 Overview of CARDIOSENSOR Project on the Development of a Nanosensor for Assessing the Risk of Cardiovascular Disease

Authors: A.C. Duarte, C.I.L. Justino, K. Duarte, A.C. Freitas, R. Pereira, P. Chaves, P. Bettencourt, S. Cardoso, T.A.P. Rocha-Santos

Abstract:

This paper aims at overviewing the topics of a research project (CARDIOSENSOR) on the field of health sciences (biomaterials and biomedical engineering). The project has focused on the development of a nanosensor for the assessment of the risk of cardiovascular diseases by the monitoring of C-reactive protein (CRP), which has been currently considered as the best validated inflammatory biomarker associated to cardiovascular diseases. The project involves tasks such as: 1) the development of sensor devices based on field effect transistors (FET): assembly, optimization and validation; 2) application of sensors to the detection of CRP in standard solutions and comparison with enzyme-linked immunosorbent assay (ELISA); and 3) application of sensors to real samples such as blood and saliva and evaluation of their ability to predict the risk of cardiovascular disease.

Keywords: Carbon nanotubes field effect transistors, cardiovascular diseases, C-reactive protein, sensor.

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6534 Modification of Electrical and Switching Characteristics of a Non Punch-Through Insulated Gate Bipolar Transistor by Gamma Irradiation

Authors: Hani Baek, Gwang Min Sun, Chansun Shin, Sung Ho Ahn

Abstract:

Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO2 interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.

Keywords: NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center.

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6533 Numerical Study of MHD Effects on Drop Formation in a T-Shaped Microchannel

Authors: M. Aghajani Haghighi, H. Emdad, K. Jafarpur, A. N. Ziaei

Abstract:

The effect of a uniform magnetic field on the formation of drops of specific size has been investigated numerically in a T-shaped microchannel. Previous researches indicated that the drop sizes of secondary stream decreases, with increasing main stream flow rate and decreasing interfacial tension. In the present study the effect of a uniform magnetic field on the main stream is considered, and it is proposed that by increasing the Hartmann number, the size of the drops of the secondary stream will be decreased.

Keywords: Drop formation, Magnetohydrodynamics, Microchannel, Volume-of-Fluid

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6532 New Device for Enhancement of Liposomal Magnetofection Efficiency of Cancer Cells

Authors: M. Baryshev, D.Vainauska, S. Kozireva, A.Karpovs

Abstract:

Liposomal magnetofection is the most powerful nonviral method for the nucleic acid delivery into the cultured cancer cells and widely used for in vitro applications. Use of the static magnetic field condition may result in non-uniform distribution of aggregate complexes on the surface of cultured cells. To prevent this, we developed the new device which allows to concentrate aggregate complexes under dynamic magnetic field, assisting more contact of these complexes with cellular membrane and, possibly, stimulating endocytosis. Newly developed device for magnetofection under dynamic gradient magnetic field, “DynaFECTOR", was used to compare transfection efficiency of human liver hepatocellular carcinoma cell line HepG2 with that obtained by lipofection and magnetofection. The effect of two parameters on transfection efficiency, incubation time under dynamic magnetic field and rotation frequency of magnet, was estimated. Liposomal magnetofection under dynamic gradient magnetic field showed the highest transfection efficiency for HepG2 cells.

Keywords: Dynamic magnetic field, Lipofection, Magnetofection

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6531 The Photon-Drag Effect in Cylindrical Quantum Wire with a Parabolic Potential

Authors: Hoang Van Ngoc, Nguyen Thu Huong, Nguyen Quang Bau

Abstract:

Using the quantum kinetic equation for electrons interacting with acoustic phonon, the density of the constant current associated with the drag of charge carriers in cylindrical quantum wire by a linearly polarized electromagnetic wave, a DC electric field and a laser radiation field is calculated. The density of the constant current is studied as a function of the frequency of electromagnetic wave, as well as the frequency of laser field and the basic elements of quantum wire with a parabolic potential. The analytic expression of the constant current density is numerically evaluated and plotted for a specific quantum wires GaAs/AlGaAs to show the dependence of the constant current density on above parameters. All these results of quantum wire compared with bulk semiconductors and superlattices to show the difference.

Keywords: Photon-drag effect, constant current density, quantum wire, parabolic potential.

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6530 Bi-axial Stress Effects on Barkhausen-Noise

Authors: G. Balogh, I. A. Szabó, P. Z. Kovács

Abstract:

Mechanical stress has a strong effect on the magnitude of the Barkhausen-noise in structural steels. Because the measurements are performed at the surface of the material, for a sample sheet, the full effect can be described by a biaxial stress field. The measured Barkhausen-noise is dependent on the orientation of the exciting magnetic field relative to the axis of the stress tensor. The sample inhomogenities including the residual stress also modifies the angular dependence of the measured Barkhausen-noise. We have developed a laboratory device with a cross like specimen for bi-axial bending. The measuring head allowed performing excitations in two orthogonal directions. We could excite the two directions independently or simultaneously with different amplitudes. The simultaneous excitation of the two coils could be performed in phase or with a 90 degree phase shift. In principle this allows to measure the Barkhausen-noise at an arbitrary direction without moving the head, or to measure the Barkhausen-noise induced by a rotating magnetic field if a linear superposition of the two fields can be assumed.

Keywords: Barkhausen-noise, Bi-axial stress, Stress dependency, Stress measuring.

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6529 Localising Gauss's Law and the Electric Charge Induction on a Conducting Sphere

Authors: Sirapat Lookrak, Anol Paisal

Abstract:

Space debris has numerous manifestations including ferro-metalize and non-ferrous. The electric field will induce negative charges to split from positive charges inside the space debris. In this research, we focus only on conducting materials. The assumption is that the electric charge density of a conducting surface is proportional to the electric field on that surface due to Gauss's law. We are trying to find the induced charge density from an external electric field perpendicular to a conducting spherical surface. An object is a sphere on which the external electric field is not uniform. The electric field is, therefore, considered locally. The localised spherical surface is a tangent plane so the Gaussian surface is a very small cylinder and every point on a spherical surface has its own cylinder. The electric field from a circular electrode has been calculated in near-field and far-field approximation and shown Explanation Touchless manoeuvring space debris orbit properties. The electric charge density calculation from a near-field and far-field approximation is done.

Keywords: Near-field approximation, far-field approximation, localized Gauss’s law, electric charge density.

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6528 Breakdown of LDPE Film under Heavy Water Absorption

Authors: Eka PW, T. Okazaki, Y. Murakami, N., Hozumi, M. Nagao

Abstract:

The breakdown strength characteristic of Low Density Polyethylene films (LDPE) under DC voltage application and the effect of water absorption have been studied. Mainly, our experiment was investigated under two conditions; dry and heavy water absorption. Under DC ramp voltage, the result found that the breakdown strength under heavy water absorption has a lower value than dry condition. In order to clarify the effect, the temperature rise of film was observed using non contact thermograph until the occurrence of the electrical breakdown and the conduction current of the sample was also measured in correlation with the thermograph measurement. From the observations, it was shown that under the heavy water absorption, the hot spot in the samples appeared at lower voltage. At the same voltage the temperature of the hot spot and conduction current was higher than that under the dry condition. The measurement result has a good correlation between the existence of a critical field for conduction current and thermograph observation. In case of the heavy water absorption, the occurrence of the threshold field was earlier than the dry condition as result lead to higher of conduction current and the temperature rise appears after threshold field was significantly increased in increasing of field. The higher temperature rise was caused by the higher current conduction as the result the insulation leads to breakdown to the lower field application.

Keywords: Low density polyethylene, heavy water absorption, conduction current, temperature rise.

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6527 Thermal Stability of a Vertical SOI-Based Capacitorless One-Transistor DRAM with Trench-Body Structure

Authors: Po-Hsieh Lin, Jyi-Tsong Lin

Abstract:

A vertical SOI-based MOSFET with trench body structure operated as 1T DRAM cell at various temperatures has been studied and investigated. Different operation temperatures are assigned for the device for its performance comparison, thus the thermal stability is carefully evaluated for the future memory device applications. Based on the simulation, the vertical SOI-based MOSFET with trench body structure demonstrates the electrical characteristics properly and possess conspicuous kink effect at various operation temperatures. Transient characteristics were also performed to prove that its programming window values and retention time behaviors are acceptable when the new 1T DRAM cell is operated at high operation temperature.

Keywords: SOI, 1T DRAM, thermal stability.

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