Search results for: Current differencing transconductance amplifiers.

Authors: Omar Qasaimeh

Abstract:

The effect of the number of quantum dot (QD) layers on the saturated gain of doped QD semiconductor optical amplifiers (SOAs) has been studied using multi-population coupled rate equations. The developed model takes into account the effect of carrier coupling between adjacent layers. It has been found that increasing the number of QD layers (K) increases the unsaturated optical gain for K<8 and approximately has no effect on the unsaturated gain for K ≥ 8. Our analysis shows that the optimum ptype concentration that maximizes the unsaturated optical gain of the ground state is NA Ôëê 0.75 ×1018cm-3 . On the other hand, it has been found that the saturated optical gain for both the ground state and the excited state are strong function of both the doping concentration and K where we find that it is required to dope the dots with n-type concentration for very large K at high photon energy.

Keywords: doping, multilayer, quantum dot optical amplifier, saturated gain.

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Authors: Hassan Jassim Motlak

Abstract:

A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to the symmetrical input stage. P-Spice simulation results are obtained using 0.18μm MIETEC CMOS process parameters and supply voltage of ±1.2V, 50μA biasing current. The p-spice simulation shows excellent improvement of the proposed CFOA over existing CMOS CFOA. Some of these performance parameters, for example, are DC gain of 62. dB, openloop gain bandwidth product of 108 MHz, slew rate (SR+) of +71.2V/μS, THD of -63dB and DC consumption power (PC) of 2mW.

Keywords: Pseudo-OTA used CMOS CFOA, low power CFOA, high-performance CFOA, novel CFOA.

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Authors: Houda Bdiri Gabbouj, Néjib Hassen, Kamel Besbes

Abstract:

This paper presents a low-voltage low-power differential linear transconductor with near rail-to-rail input swing. Based on the current-mirror OTA topology, the proposed transconductor combines the Flipped Voltage Follower (FVF) technique to linearize the transconductor behavior that leads to class- AB linear operation and the virtual transistor technique to lower the effective threshold voltages of the transistors which offers an advantage in terms of low supply requirement. Design of the OTA has been discussed. It operates at supply voltages of about ±0.8V. Simulation results for 0.18μm TSMC CMOS technology show a good input range of 1Vpp with a high DC gain of 81.53dB and a total harmonic distortion of -40dB at 1MHz for an input of 1Vpp. The main aim of this paper is to present and compare new OTA design with high transconductance, which has a potential to be used in low voltage applications.

Keywords: Amplifier class AB, current mirror, flipped voltage follower, low voltage.

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Authors: V.Fathipour, M. A. Malakootian, S. Fathipour, M. Fathipour

Abstract:

In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.

Keywords: High Frequency MOSFET, Design of RF LDMOS, Strained-Silicon, LDMOS.

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Authors: J. S. Kim, N. P. Hong

Abstract:

In this paper, a CMOS vector modulator designed for wireless backhaul system based on 802.11ac is presented. A poly phase filter and sign select switches yield two orthogonal signal paths. Two variable gain amplifiers with strongly reduced phase shift of only ±5 ° are used to weight these paths. It has a phase control range of 360 ° and a gain range of -10 dB to 10 dB. The current drawn from a 1.2 V supply amounts 20.4 mA. Using a 0.13 mm technology, the chip die area amounts 1.47x0.75 mm².

Keywords: CMOS, vector modulator, backhaul, 802.11ac.

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Authors: Abdulamgid.T. Bouzed, Suleiman. M. Elhamali

Abstract:

The technical realization of data transmission using glass fiber began after the development of diode laser in year 1962. The erbium doped fiber amplifiers (EDFA's) in high speed networks allow information to be transmitted over longer distances without using of signal amplification repeaters. These kinds of fibers are doped with erbium atoms which have energy levels in its atomic structure for amplifying light at 1550nm. When a carried signal wave at 1550nm enters the erbium fiber, the light stimulates the excited erbium atoms which pumped with laser beam at 980nm as additional light. The wavelength and intensity of the semiconductor lasers depend on the temperature of active zone and the injection current. The present paper shows the effect of the diode lasers temperature and injection current on the optical amplification. From the results of in- and output power one may calculate the max. optical gain by erbium doped fiber amplifier.

Keywords: Amplifier, erbium doped fiber, gain, lasers, temperature.

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Authors: S. Kumaravel, B. Venkataramani

Abstract:

In the literature, Improved Recycling Folded Cascode (IRFC) Operational Transconductance Amplifier (OTA) is proposed for enhancing the DC gain and the Unity Gain Bandwidth (UGB) of the Recycling Folded Cascode (RFC) OTA. In this paper, an enhanced IRFC (EIRFC) OTA which uses positive feedback at the cascode node is proposed for enhancing the differential mode (DM) gain without changing the unity gain bandwidth (UGB) and lowering the Common mode (CM) gain. For the purpose of comparison, IRFC and EIRFC OTAs are implemented using UMC 90nm CMOS technology and studied through simulation. From the simulation, it is found that the DM gain and CM gain of EIRFC OTA is higher by 6dB and lower by 38dB respectively, compared to that of IRFC OTA for the same power and area. The slew rate of EIRFC OTA is also higher by a factor of 1.5.

Keywords: Cascode Amplifier, CMRR, gm/ID Methodology, Recycling, Slew Rate.

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Authors: Mehmet Nefes, Selman Demirel, Hasan H. Ertok, Cenk Sen

Abstract:

A typical reliability engineering problem regarding communication satellites has been considered to determine redundancy allocation scheme of power amplifiers within payload transponder module, whose dominant function is to amplify power levels of the received signals from the Earth, through maximizing reliability against mass, power, and other technical limitations. Adding each redundant power amplifier component increases not only reliability but also hardware, testing, and launch cost of a satellite. This study investigates a multi-objective approach used in order to solve Redundancy Allocation Problem (RAP) for a communication satellite payload transponder, focusing on design cost due to redundancy and reliability factors. The main purpose is to find the optimum power amplifier redundancy configuration satisfying reliability and capacity thresholds simultaneously instead of analyzing respectively or independently. A mathematical model and calculation approach are instituted including objective function definitions, and then, the problem is solved analytically with different input parameters in MATLAB environment. Example results showed that payload capacity and failure rate of power amplifiers have remarkable effects on the solution and also processing time.

Keywords: Communication satellite payload, multi-objective optimization, redundancy allocation problem, reliability, transponder.

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Authors: Morteza Fathipour, Samira Omidbakhsh, Kimia Khodayari

Abstract:

RF performance of SOI CMOS device has attracted significant amount of interest recently. In order to improve RF parameters, Strained Si/Relaxed Si0.8Ge0.2 investigated as a replacement for Si technology .Enhancement of carrier mobility associated with strain engineering makes Strained Si a promising candidate for improving RF performance of CMOS technology. From the simulation, the cut-off frequency is estimated to be 224 GHZ, whereas in SOI at similar bias is about 188 GHZ. Therefore, Strained Si exhibits 19% improvement in cut-off frequency over similar Si counterpart. In this paper, Ion/Ioff ratio is studied as one of the key parameters in logic and digital application. Strained Si/SiGe demonstrates better Ion/Ioff characteristic than SOI, in similar channel length of 100 nm.Another important key analog figures of merit such as Early Voltage (VEA) ,transconductance vs drain current (gm /Ids) are studied. They introduce the efficiency of the devices to convert dc power into ac frequency.

Keywords: cut-off frequency, RF application, Silicon oninsulator, Strained Si/SiGe on insulator.

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Authors: Hung-Pei Hsu, Jyi-Tsong Lin, Po-Hsieh Lin, Cheng-Hsien Chang, Ming-Tsung Shih, Chan-Hsiang Chang, Shih-Chuan Tseng, Min-Yan Lin, Shih-Wen Hsu

Abstract:

In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Keywords: Average gate length (Lavg), drain-induced barrier lowering (DIBL), L-shaped channel MOSFET (LMOS), subthreshold swing (S.S.).

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Authors: Sangeeta Singh, Pankaj Kumar, P. N. Kondekar

Abstract:

In this paper, the transient device performance analysis of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been evaluated. 3-D Bohm Quantum Potential (BQP) transport device simulation has been used to evaluate the delay and power dissipation performance. GI-JLT has a number of desirable device parameters such as reduced propagation delay, dynamic power dissipation, power and delay product, intrinsic gate delay and energy delay product as compared to Gate-all-around transistors GAA-JLT. In addition to this, various other device performance parameters namely, on/off current ratio, short channel effects (SCE), transconductance Generation Factor (TGF) and unity gain cut-off frequency (fT ) and subthreshold slope (SS) of the GI-JLT and GAA-JLT have been analyzed and compared. GI-JLT shows better device performance characteristics than GAA-JLT for low power and high frequency applications, because of its larger gate electrostatic control on the device operation.

Keywords: Gate-inside junctionless transistor GI-JLT, Gate-all-around junctionless transistor GAA-JLT, propagation delay, power delay product.

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Authors: Yeon-kug Moon, Kang-Yoon Lee, Yun-Jae Won, Seung-Ok Lim

Abstract:

This paper describes a low-voltage and low-power channel selection analog front end with continuous-time low pass filters and highly linear programmable gain amplifier (PGA). The filters were realized as balanced Gm-C biquadratic filters to achieve a low current consumption. High linearity and a constant wide bandwidth are achieved by using a new transconductance (Gm) cell. The PGA has a voltage gain varying from 0 to 65dB, while maintaining a constant bandwidth. A filter tuning circuit that requires an accurate time base but no external components is presented. With a 1-Vrms differential input and output, the filter achieves -85dB THD and a 78dB signal-to-noise ratio. Both the filter and PGA were implemented in a 0.18um 1P6M n-well CMOS process. They consume 3.2mW from a 1.8V power supply and occupy an area of 0.19mm2.

Keywords: component ; Channel selection filters, DC offset, programmable gain amplifier, tuning circuit

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Authors: Haruka Mikamori, Koyu Chinen

Abstract:

An optimized design of E/O and O/E for access points of WiMAX RoF was carried out by evaluating RCE. The use of the DFB-LD, a low input-impedance driving, a low distortion PIN-PD, and a high gain EPHEMT amplifier is promising the cost-effective design. For the uplink RoF design, the use of EDFA and EP-HEMT amplifiers is necessity.

Keywords: WiMAX, RoF, RCE, RAU, Access Point

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Authors: M. Zamin Khan, Yanjie Wang, R. Raut

Abstract:

A 1V, 1GHz low noise amplifier (LNA) has been designed and simulated using Spectre simulator in a standard TSMC 0.18um CMOS technology.With low power and noise optimization techniques, the amplifier provides a gain of 24 dB, a noise figure of only 1.2 dB, power dissipation of 14 mW from a 1 V power supply.

Keywords:

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Authors: Mihaela Popescu, Alexandru Bitoleanu, Mircea Dobriceanu

Abstract:

This paper deals with the current space-vector decomposition in three-phase, three-wire systems on the basis of some case studies. We propose four components of the current spacevector in terms of DC and AC components of the instantaneous active and reactive powers. The term of supplementary useless current vector is also pointed out. The analysis shows that the current decomposition which respects the definition of the instantaneous apparent power vector is useful for compensation reasons only if the supply voltages are sinusoidal. A modified definition of the components of the current is proposed for the operation under nonsinusoidal voltage conditions.

Keywords: Active current, Active filtering, p–q theory, Reactive current.

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Authors: Jasdeep Kaur, Nupur Prakash, S. S. Rajput

Abstract:

A current mirror (CM) based on self cascode MOSFETs low voltage analog and mixed mode structures has been proposed. The proposed CM has high output impedance and can operate at 0.5 V. P-Spice simulations confirm the high performance of this CM with a bandwidth of 6.0 GHz at input current of 100 μA.

Keywords: Current Mirrors, Composite Cascode Structure, Current Source/Sink

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Authors: Hassan Faraji Baghtash

Abstract:

A high-speed current mirror with low-power method of adjusting current gain is presented. The current mirror provides continuous gain adjustment; yet, its gain can simply be programmed digitally, as well. The structure features the ever interesting merits of linear-in-dB gain control scheme and low power/voltage operation. The performance of proposed structure is verified through the simulation in TSMC 0.18 µm CMOS Technology. The proposed tunable gain current mirror structure draws only 18 µW from 0.9 V power supply and can operate at high frequencies up to 550 MHz in the worst case condition of maximum gain setting.

Keywords: Current mirror, current mode, low power, low voltage, tunable circuit, variable current amplifier.

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Authors: V.V. Lyahov, V.M. Neshchadim

Abstract:

The structural stability of the model of a nonelectroneutral current sheath is investigated. The stationary model of a current sheath represents the system of four connected nonlinear differential first-order equations and thus they should manifest structural instability property, i.e. sensitivity to the infinitesimal changes of parameters and starting conditions. Domains of existence of the solutions of current sheath type are found. Those solutions of the current sheath type are realized only in some regions of sevendimensional space of parameters of the problem. The phase volume of those regions is small in comparison with the whole phase volume of the definition range of those parameters. It is shown that the offered model of a nonelectroneutral current sheath is applicable for theoretical interpretation of the bifurcational current sheaths observed in the magnetosphere.

Keywords: Distribution function, electromagnetic field, magnetoactive plasma, nonelectroneutral current sheath, structural instability, bifurcational current sheath.

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Authors: H.B.Kekre, Archana Athawale, Pallavi N.Halarnkar

Abstract:

Steganography, derived from Greek, literally means “covered writing". It includes a vast array of secret communications methods that conceal the message-s very existence. These methods include invisible inks, microdots, character arrangement, digital signatures, covert channels, and spread spectrum communications. This paper proposes a new improved version of Least Significant Bit (LSB) method. The approach proposed is simple for implementation when compared to Pixel value Differencing (PVD) method and yet achieves a High embedding capacity and imperceptibility. The proposed method can also be applied to 24 bit color images and achieve embedding capacity much higher than PVD.

Keywords: Information Hiding, LSB Matching, PVD Steganography.

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Authors: M.Yousefi, A.Vatanjou, F.Nazeri

Abstract:

A fast settling multipath CMOS OTA for high speed switched capacitor applications is presented here. With the basic topology similar to folded-cascode, bandwidth and DC gain of the OTA are enhanced by adding extra paths for signal from input to output. Designed circuit is simulated with HSPICE using level 49 parameters (BSIM 3v3) in 0.35mm standard CMOS technology. DC gain achieved is 56.7dB and Unity Gain Bandwidth (UGB) obtained is 1.15GHz. These results confirm that adding extra paths for signal can improve DC gain and UGB of folded-cascode significantly.

Keywords: OTA (Operational Transconductance Amplifier), DC gain, Unity Gain Bandwidth (UGBW)

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Authors: Peng Li, Jun Zhou, Xin Liu, Chee Keong Ho, Xiaodan Zou, Minkyu Je

Abstract:

A digital system is proposed for low power 100- channel neural recording system in this paper, which consists of 100 amplifiers, 100 analog-to-digital converters (ADC), digital controller and baseband, transceiver for data link and RF command link. The proposed system is designed in a 0.18 μm CMOS process and 65 nm CMOS process.

Keywords: multiplex, neural recording, synchronization, transceiver

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Authors: Shuh Liang

Abstract:

This article provides empirical evidence on the effect of domestic and international factors on the U.S. current account deficit. Linear dynamic regression and vector autoregression models are employed to estimate the relationships during the period from 1986 to 2011. The findings of this study suggest that the current and lagged private saving rate and foreign current account for East Asian economies have played a vital role in affecting the U.S. current account. Additionally, using Granger causality tests and variance decompositions, the change of the productivity growth and foreign domestic demand are determined to influence significantly the change of the U.S. current account. To summarize, the empirical relationship between the U.S. current account deficit and its determinants is sensitive to alternative regression models and specifications.

Keywords: Current account deficit, productivity growth, foreign demand, vector autoregression.

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Authors: Supayotin Na Songkla, Winai Jaikla

Abstract:

This article presents a resistorless current-mode firstorder allpass filter based on second generation current controlled current conveyors (CCCIIs). The features of the circuit are that: the pole frequency can be electronically controlled via the input bias current: the circuit description is very simple, consisting of 2 CCCIIs and single grounded capacitor, without any external resistors and component matching requirements. Consequently, the proposed circuit is very appropriate to further develop into an integrated circuit. Low input and high output impedances of the proposed configuration enable the circuit to be cascaded in current-mode without additional current buffers. The PSpice simulation results are depicted. The given results agree well with the theoretical anticipation. The application example as a current-mode quadrature oscillator is included.

Keywords: First-order all pass filter, current-mode, CCCII.

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Authors: Zdravka Aljinović, Snježana Pivac, Boško Šego

Abstract:

According to the interaction of inflation and unemployment, expectation of the rate of inflation in Croatia is estimated. The interaction between inflation and unemployment is shown by model based on three first-order differential i.e. difference equations: Phillips relation, adaptive expectations equation and monetary-policy equation. The resulting equation is second order differential i.e. difference equation which describes the time path of inflation. The data of the rate of inflation and the rate of unemployment are used for parameters estimation. On the basis of the estimated time paths, the stability and convergence analysis is done for the rate of inflation.

Keywords: Differencing, inflation, time path, unemployment.

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Authors: J. Mohan, S. Maheshwari

Abstract:

A new circuit topology realizing a first-order currentmode all-pass filter is proposed using two dual-output second generation current conveyor and two passive components. The circuit possesses low-input and high-output impedance, which makes it ideal for current-mode systems. The proposed circuit is verified through PSPICE simulation results.

Keywords: active filter, all-pass filter, current-mode, current conveyor.

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Authors: M.A. Mohammadi, H.Alinejad, A.Piri

Abstract:

The current sheath dynamics in plasma focus facilities is the most important factors. In this paper the current sheath velocity at three dimensional with Sahand plasma focus facility is investigated. For this purpose the discharge is produced in argon gas with deposited energy lying in the range of 20-37kJ. The current sheath is monitored using two tridimensional magnetic probes. These probes installed near the surface of the interior electrode (anode) at 125mm from the anode axis (pinch place). The effect of gas pressure on the current sheath velocity also is investigated.

Keywords: Plasma focus, Current sheath, magnetic probe

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Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Guo-Liang Zhang, Tai-Hong Wang

Abstract:

We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V.

Keywords: Photo-to-dark-current contrast ratio, Photo-current, Dark-current, Process parameter

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Authors: H. A. Rahim, U. U. Sheikh, R. B. Ahmad, A. S. M. Zain

Abstract:

This paper describes an algorithm to estimate realtime vehicle velocity using image processing technique from the known camera calibration parameters. The presented algorithm involves several main steps. First, the moving object is extracted by utilizing frame differencing technique. Second, the object tracking method is applied and the speed is estimated based on the displacement of the object-s centroid. Several assumptions are listed to simplify the transformation of 2D images from 3D real-world images. The results obtained from the experiment have been compared to the estimated ground truth. From this experiment, it exhibits that the proposed algorithm has achieved the velocity accuracy estimation of about ± 1.7 km/h.

Keywords: camera calibration, object tracking, velocity estimation, video image processing

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Authors: M. G. Murtaza, E. E. Tzirtzilakis, M. Ferdows

Abstract:

The mixed convective flow of MHD incompressible, steady boundary layer in heat transfer over a curved stretching sheet due to temperature dependent thermal conductivity is studied. We use curvilinear coordinate system in order to describe the governing flow equations. Finite difference solutions with central differencing have been used to solve the transform governing equations. Numerical results for the flow velocity and temperature profiles are presented as a function of the non-dimensional curvature radius. Skin friction coefficient and local Nusselt number at the surface of the curved sheet are discussed as well.

Keywords: Curved stretching sheet, finite difference method, MHD, variable thermal conductivity.

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Authors: A. V. Budin, Ph. G. Rutberg, M. E. Pinchuk, A. A. Bogomaz, V. Yu. Svetova

Abstract:

The investigation results of high-density hydrogen heating by high-current electric arc are presented at initial pressure from 5 MPa to 160 MPa with current amplitude up to 1.6 MA and current rate of rise 109-1011 A/s. When changing the initial pressure and current rate of rise, channel temperature varies from several electronvolts to hundreds electronvolts. Arc channel radius is several millimeters. But the radius of the discharge chamber greater than the radius of the arc channel on approximately order of magnitude. High efficiency of gas heating is caused by radiation absorption of hydrogen surrounding the arc. Current channel consist from vapor of the initiating wire. At current rate of rise of 109 A/s and relatively small current amplitude gas heating occurs due to radiation absorption in the band transparency of hydrogen by the wire vapours with photon energies less than 13.6 eV. At current rate of rise of 1011 A/s gas heating is due to hydrogen absorption of soft X-rays from discharge channel.

Keywords: High-density hydrogen heating by high-current electric arc.

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