Search results for: ion sensitive field effect transistor (ISFET)

Authors: Dara Singh, Keikhosrow Firouzbakhsh, Mohammad Taghi Ahmadian

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In this study, a validated 3D finite volume model of human eye is developed to study the fluid flow and heat transfer in the human eye at steady state conditions. For this purpose, discretized bio-heat transfer equation coupled with Boussinesq equation is analyzed with different anatomical, environmental, and physiological conditions. It is demonstrated that the fluid circulation is formed as a result of thermal gradients in various regions of eye. It is also shown that posterior region of the human eye is less affected by the ambient conditions compared to the anterior segment which is sensitive to the ambient conditions and also to the way the gravitational field is defined compared to the geometry of the eye making the circulations and the thermal field complicated in transient states. The effect of variation in material and boundary conditions guides us to the conclusion that thermal field of a healthy and non-healthy eye can be distinguished via computer simulations.

Keywords: Bio-heat, Boussinesq, conduction, convection, eye.

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Authors: Mohd Nasir Mahmud, Ruwaidiah Idris, Ishak Hashim

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With the presence of a uniform vertical magnetic field and suspended particles, thermocapillary instability in a horizontal liquid layer is investigated. The resulting eigenvalue is solved by the Galerkin technique for various basic temperature gradients. It is found that the presence of magnetic field always has a stability effect of increasing the critical Marangoni number.

Keywords: Marangoni convection, Magnetic field, Micropolar fluid, Non-uniform thermal gradient, Thermocapillary.

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Authors: Siddharth Gadkari, Rochish Thaokar

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The effect of viscosity ratio (λ, defined as viscosity of surrounding medium/viscosity of fluid jet) on stability of axisymmetric (m=0) and asymmetric (m=1) modes of perturbation on a liquid-liquid jet in presence of radial electric field (E0 ), is studied using linear stability analysis. The viscosity ratio is shown to have a damping effect on both the modes of perturbation. However the effect was found more pronounced for the m=1 mode as compared to m=1 mode. Investigating the effect of both E0 and λ simultaneously, an operating diagram is generated, which clearly shows the regions of dominance of the two modes for a range of electric field and viscosity ratio values.

Keywords: liquid-liquid jet, axisymmetric perturbation, asymmetric perturbation, radial electric field

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Authors: Ala'eddin A. Saif , Z. A. Z. Jamal, Z. Sauli, P. Poopalan

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The ferroelectric behavior of barium strontium titanate (BST) in thin film form has been investigated in order to study the possibility of using BST for ferroelectric gate-field effect transistor (FeFET) for memory devices application. BST thin films have been fabricated as Al/BST/Pt/SiO2/Si-gate configuration. The variation of the dielectric constant (ε) and tan δ with frequency have been studied to ensure the dielectric quality of the material. The results show that at low frequencies, ε increases as the Ba content increases, whereas at high frequencies, it shows the opposite variation, which is attributed to the dipole dynamics. tan δ shows low values with a peak at the mid-frequency range. The ferroelectric behavior of the Al/BST/Pt/SiO2/Si has been investigated using C-V characteristics. The results show that the strength of the ferroelectric hysteresis loop increases as the Ba content increases; this is attributed to the grain size and dipole dynamics effect.

Keywords: BST thin film, Electrical properties, Ferroelectrichysteresis, Ferroelectric FET.

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Authors: Arash Azizi Mazreah, Mohammad T. Manzuri Shalmani, Hamid Barati, Ali Barati

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This paper presents a novel CMOS four-transistor SRAM cell for very high density and low power embedded SRAM applications as well as for stand-alone SRAM applications. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 20% smaller than a conventional six-transistor cell using same design rules. Also proposed cell uses two word-lines and one pair bit-line. Read operation perform from one side of cell, and write operation perform from another side of cell, and swing voltage reduced on word-lines thus dynamic power during read/write operation reduced. The fabrication process is fully compatible with high-performance CMOS logic technologies, because there is no need to integrate a poly-Si resistor or a TFT load. HSPICE simulation in standard 0.25μm CMOS technology confirms all results obtained from this paper.

Keywords: Positive feedback, leakage current, read operation, write operation, dynamic energy consumption.

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Authors: Jianping Hu, Xiaolei Sheng

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This paper introduces an adiabatic register file based on two-phase CPAL (Complementary Pass-Transistor Adiabatic Logic circuits) with power-gating scheme, which can operate on a single-phase power clock. A 32×32 single-phase adiabatic register file with power-gating scheme has been implemented with TSMC 0.18μm CMOS technology. All the circuits except for the storage cells employ two-phase CPAL circuits, and the storage cell is based on the conventional memory one. The two-phase non-overlap power-clock generator with power-gating scheme is used to supply the proposed adiabatic register file. Full-custom layouts are drawn. The energy and functional simulations have been performed using the net-list extracted from their layouts. Compared with the traditional static CMOS register file, HSPICE simulations show that the proposed adiabatic register file can work very well, and it attains about 73% energy savings at 100 MHz.

Keywords: Low power, Register file, Complementarypass-transistor logic, Adiabatic logic, Single-phase power clock.

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Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Guo-Liang Zhang, Tai-Hong Wang

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We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V.

Keywords: Photo-to-dark-current contrast ratio, Photo-current, Dark-current, Process parameter

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Authors: Porag Jyoti Ligira, Gargi Khanna

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The paper presents a simulation study of the electrical characteristic of Bulk Planar Junctionless Transistor (BPJLT) using spacer. The BPJLT is a transistor without any PN junctions in the vertical direction. It is a gate controlled variable resistor. The characteristics of BPJLT are analyzed by varying the oxide material under the gate. It can be shown from the simulation that an ideal subthreshold slope of ~60 mV/decade can be achieved by using highk dielectric. The effects of variation of spacer length and material on the electrical characteristic of BPJLT are also investigated in the paper. The ION / IOFF ratio improvement is of the order of 107 and the OFF current reduction of 10-4 is obtained by using gate dielectric of HfO2 instead of SiO2.

Keywords: BPJLT, double gate, high-k, spacer.

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Authors: Min-ju Kwon, Chae-won Kim, Jeong-yun Seo, Hee-guk Chae, Yong-seo Koo

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In this paper, we presented the LDO (low-dropout) regulator which enhanced the PSRR by applying the constant current source generation technique through the BGR (Band Gap Reference) to form the noise sensing circuit. The current source through the BGR has a constant current value even if the applied voltage varies. Then, the noise sensing circuit, which is composed of the current source through the BGR, operated between the error amplifier and the pass transistor gate of the LDO regulator. As a result, the LDO regulator has a PSRR of -68.2 dB at 1k Hz, -45.85 dB at 1 MHz and -45 dB at 10 MHz. the other performance of the proposed LDO was maintained at the same level of the conventional LDO regulator.

Keywords: LDO regulator, noise sensing circuit, current reference, pass transistor.

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Authors: N. A. Salim, M. M. Othman, I. Musirin, M. S. Serwan

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Protection system hidden failures have been identified as one of the main causes of system cascading collapse resulting to power system instability. In this paper, a systematic approach is presented in order to identify the probability of a system cascading collapse by taking into consideration the effect of protection system hidden failure. This includes the accurate calculation of the probability of hidden failure as it will provide significant impinge on the findings of the probability of system cascading collapse. The probability of a system cascading collapse is then used to identify the initial tripping of sensitive transmission lines which will contribute to a critical system cascading collapse. Based on the results obtained from this study, it is important to decide on the accurate value of the hidden failure probability as it will affect the probability of a system cascading collapse.

Keywords: Critical system cascading collapse, hidden failure, probability of cascading collapse, sensitive transmission lines.

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Authors: Dawit Burusie Abdi, Mamidala Jagadesh Kumar

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In this paper, using 2D TCAD simulations, the application of a dual material gate (DMG) for suppressing ambipolar conduction in a tunnel field effect transistor (TFET) is demonstrated. Using the proposed DMG concept, the ambipolar conduction can be effectively suppressed even if the drain doping is as high as that of the source doping. Achieving this symmetrical doping, without the ambipolar conduction in TFETs, gives the advantage of realizing both n-type and p-type devices with the same doping sequences. Furthermore, the output characteristics of the DMG TFET exhibit a good saturation when compared to that of the gate-drain underlap approach. This improved behavior of the DMG TFET makes it a good candidate for inverter based logic circuits.

Keywords: Dual material gate, suppressing ambipolar current, symmetrically doped TFET, tunnel FETs, PNPN TFET.

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Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Jian-Ping Zeng, Tai-Hong Wang

Abstract:

Photo-BJMOSFET (Bipolar Junction Metal-Oxide- Semiconductor Field Effect Transistor) fabricated on SOI film was proposed. ITO film is adopted in the device as gate electrode to reduce light absorption. Depletion region but not inversion region is formed in film by applying gate voltage (but low reverse voltage) to achieve high photo-to-dark-current ratio. Comparisons of photoelectriccharacteristics executed among VGK=0V, 0.3V, 0.6V, 0.9V and 1.0V (reverse voltage VAK is equal to 1.0V for total area of 10×10μm2). The results indicate that the greatest improvement in photo-to-dark-current ratio is achieved up to 2.38 at VGK=0.6V. In addition, photo-BJMOSFET is compatible with CMOS integration due to big input resistance

Keywords: Photo-BJMOSFET, Responsivity, Sensitivity, Spectral response.

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Authors: Zina Saheb, Ezz El-Masry

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As the Silicon oxide scaled down in MOSFET technology to few nanometers, gate Direct Tunneling (DT) in Floating gate (FGMOSFET) devices has become a major concern for analog designers. FGMOSFET has been used in many low-voltage and low-power applications, however, there is no accurate model that account for DT gate leakage in nano-scale. This paper studied and analyzed different simulation models for FGMOSFET using TSMC 90-nm technology. The simulation results for FGMOSFET cascade current mirror shows the impact of DT on circuit performance in terms of current and voltage without the need for fabrication. This works shows the significance of using an accurate model for FGMOSFET in nan-scale technologies.

Keywords: CMOS transistor, direct-tunneling current, floatinggate, gate-leakage current, simulation model.

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Authors: N. Massoum, A. Guen. Bouazza, B. Bouazza, A. El Ouchdi

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The progress of industry integrated circuits in recent years has been pushed by continuous miniaturization of transistors. With the reduction of dimensions of components at 0.1 micron and below, new physical effects come into play as the standard simulators of two dimensions (2D) do not consider. In fact the third dimension comes into play because the transverse and longitudinal dimensions of the components are of the same order of magnitude. To describe the operation of such components with greater fidelity, we must refine simulation tools and adapted to take into account these phenomena. After an analytical study of the static characteristics of the component, according to the different operating modes, a numerical simulation is performed of field-effect transistor with submicron gate MESFET GaInP. The influence of the dimensions of the gate length is studied. The results are used to determine the optimal geometric and physical parameters of the component for their specific applications and uses.

Keywords: Monte Carlo simulation, transient electron transport, MESFET device.

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Authors: S. Santalunai, T. Thosdeekoraphat, C. Thongsopa

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This paper presents the effect of electric field distribution which is an electric field intensity analysis. Consideration of the dielectric heating of grains and insects, the rice and rice weevils are utilized for dielectric heating analysis. Furthermore, this analysis compares the effect of electric field distribution in rice and rice weevil. In this simulation, two copper plates are used to generate the electric field for dielectric heating system and put the rice materials between the copper plates. The simulation is classified in two cases, which are case I one rice weevil is placed in the rice and case II two rice weevils are placed at different position in the rice. Moreover, the probes are located in various different positions on plate. The power feeding on this plate is optimized by using CST EM studio program of 1000 watt electrical power at 39 MHz resonance frequency. The results of two cases are indicated that the most electric field distribution and intensity are occurred on the rice and rice weevils at the near point of the probes. Moreover, the heat is directed to the rice weevils more than the rice. When the temperature of rice and rice weevils are calculated and compared, the rice weevils has the temperature more than rice is about 41.62 Celsius degrees. These results can be applied for the dielectric heating applications to eliminate insect.

Keywords: Copper plates, Electric field distribution, Dielectric heating.

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Authors: Hung-Pei Hsu, Jyi-Tsong Lin, Po-Hsieh Lin, Cheng-Hsien Chang, Ming-Tsung Shih, Chan-Hsiang Chang, Shih-Chuan Tseng, Min-Yan Lin, Shih-Wen Hsu

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In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Keywords: Average gate length (Lavg), drain-induced barrier lowering (DIBL), L-shaped channel MOSFET (LMOS), subthreshold swing (S.S.).

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Authors: Srikanta Bose, S.K. Mazumder

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In the present simulation work, an attempt is made to study the switching dynamics of an optically controlled 4HSiC thyristor power semiconductor device with the use of GaAs optically triggered power transistor. The half-cell thyristor has the forward breakdown of 200 V and reverse breakdown of more than 1000 V. The optically controlled thyristor has a rise time of 0.14 μs and fall time of 0.065 μs. The turn-on and turn-off delays are 0.1 μs and 0.06 μs, respectively. In addition, this optically controlled thyristor is used as a control switch for the DC-DC Boost converter. The pn-diode used for the converter has the forward drop of 2.8 V and reverse breakdown of around 400 V.

Keywords: 4H-SiC, Boost converter, Optical triggering, Power semiconductor device, thyristor.

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Authors: Ching-Feng Chen, Ching-Chih Tsai

Abstract:

With the size of the transistor gradually approaching the physical limit, it challenges the persistence of Moore’s Law due to such issues of the short channel effect and the development of the high numerical aperture (NA) lithography equipment. In the context of the ever-increasing technical requirements of portable devices and high-performance computing (HPC), relying on the law continuation to enhance the chip density will no longer support the prospects of the electronics industry. Weighing the chip’s power consumption-performance-area-cost-cycle time to market (PPACC) is an updated benchmark to drive the evolution of the advanced wafer nanometer (nm). The advent of two and half- and three-dimensional (2.5 and 3D)- Very-Large-Scale Integration (VLSI) packaging based on Through Silicon Via (TSV) technology has updated the traditional die assembly methods and provided the solution. This overview investigates the up-to-date and cutting-edge packaging technologies for 2.5D and 3D integrated circuits (IC) based on the updated transistor structure and technology nodes. We conclude that multi-chip solutions for 2.5D and 3D IC packaging can prolong Moore’s Law.

Keywords: Moore’s Law, High Numerical Aperture, Power Consumption-Performance-Area-Cost-Cycle Time to Market, PPACC, 2.5 and 3D-Very-Large-Scale Integration Packaging, Through Silicon Vi.

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Authors: Y.Bakhshan, H.Ashoori

Abstract:

In this research, a 2-D computational analysis of steady state free convection in a rectangular enclosure filled with an electrically conducting fluid under Effect of Magnetic Field has been performed. The governing equations (mass, momentum, and energy) are formulated and solved by a finite volume method (FVM) subjected to different boundary conditions. A parametric study has been conducted to consider the influence of Grashof number (Gr), Prantdl number (Pr) and the orientation of magnetic field on the flow and heat transfer characteristics. It is observed that Nusselt number (Nu) and heat flux will increase with increasing Grashof and Prandtl numbers and decreasing the slope of the orientation of magnetic field.

Keywords: Rectangular Cavity, magneto-hydrodynamic, free convection, simulation

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Authors: Khalida Boutemak, Nasssima Benali, Nadji Moulai-Mostefa

Abstract:

Effect of enzyme on the yield and chemical composition of Artemisia campestris essential oil is reported in the present study. It was demonstrated that enzyme facilitated the extraction of essential oil with increase in oil yield and did not affect any noticeable change in flavour profile of the  volatile oil. Essential oil was tested for antibacterial activity using Escherichia coli; which was extremely sensitive against control with the largest inhibition (29mm), whereas Staphylococcus aureus was the most sensitive against essential oil obtained from enzymatic pre-treatment with the largest inhibition zone (25mm). The antioxidant activity of the essential oil with hemicellulase pre-treatment (EO2) and control sample (EO1) was determined through reducing power. It was significantly lower than the standard drug (vitamin C) in this order: vitamin C˃EO2˃EO1.

Keywords: Artemisia campestris, enzyme pre-treatment, hemicellulase, antibacterial activity, antioxidant activity.

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Authors: S. Tupsie, A. Isaramongkolrak, P. Pao-la-or

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This paper presents the mathematical model of electric field and magnetic field in transmission system, which performs in second-order partial differential equation. This research has conducted analyzing the electromagnetic field radiating to atmosphere around the transmission line, when there is the transmission line transposition in case of long distance distribution. The six types of 500 kV transposed HV transmission line with double circuit will be considered. The computer simulation is applied finite element method that is developed by MATLAB program. The problem is considered to two dimensions, which is time harmonic system with the graphical performance of electric field and magnetic field. The impact from simulation of six types long distance distributing transposition will not effect changing of electric field and magnetic field which surround the transmission line.

Keywords: Transposition, Electromagnetic Field, Finite Element Method (FEM), Transmission Line, Computer Simulation

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Authors: AL.AL, M. B. I. Reaz, S. M. A. Motakabber, Mohd Alauddin Mohd Ali

Abstract:

Nowadays it is a trend for electronic circuit designers to integrate all system components on a single-chip. This paper proposed the design of a single-chip proportional to absolute temperature (PTAT) sensor including a voltage reference circuit using CEDEC 0.18m CMOS Technology. It is a challenge to design asingle-chip wide range linear response temperature sensor for many applications. The channel widths between the compensation transistor and the reference transistor are critical to design the PTAT temperature sensor circuit. The designed temperature sensor shows excellent linearity between -100°C to 200° and the sensitivity is about 0.05mV/°C. The chip is designed to operate with a single voltage source of 1.6V.

Keywords: PTAT, single-chip circuit, linear temperature sensor, CMOS technology.

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Authors: S. Boonlertnirun, R. Suvannasara, K. Boonlertnirun

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Hypoxia has negative effects on growth and crop yield, its severity is so varied depending on crop growth stages, duration of hypoxia and crop species. The objective was to evaluate the sensitive growth stage and the duration of hypoxia negatively affecting growth and yield of waxy corn. Pot experiment was conducted using a split plot in randomized complete block with 3 growth stages: V3 (3-4 true leaves), V7 (7-8 true leaves) and R1 (silking stage), and 3 hypoxic durations: 6, 9 and 12 days, in an open –ended outdoor greenhouse during January to March 2013. The results revealed that different growth stages had significantly (p < 0.5) different responses to hypoxia, seeing that the sensitive growth stage affecting plant height, yield and yield components was mostly detected in V7 growth stage whereas leaf greenness and days to silking were sensitive to hypoxia at R1 growth stage. Different hypoxic durations significantly affected yield and yield components, hypoxic duration of 12 days showed the most negative effect greater than the others. In this present study, it can be concluded that waxy corn plants were waterlogged at V7 growth stage for 12 days had the most negative effect on yield and yield components.

Keywords: Hypoxia duration, waxy corn, growth stage.

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Authors: Ahmad Gholami , Saeed Sharafi, Hamid Abbasdokht

Abstract:

The effect of magnetic field on germination characteristics of two wheat Seeds has been studied under laboratory conditions. Seeds were magnetically exposed to magnetic field strengths, 125 or 250mT for different periods of time. Mean germination time and the time required to obtain 10, 25, 50, 75 and 90%of seeds to germinate were calculated. The germination time for each treatment were in general, higher than corresponding control values, in the other word in treated seeds time required for mean seed germination time increased nearly 3 hours in compared non treated control seeds. T10 for doses D5, D6, D11 and D12 significantly higher than the control values for both cultivars. Mean germination time (MGT) in both cultivars significantly increased when the time of seed exposed at magnetic field treatments increased , about 3 and 2 hour respectively for Omid and BCR cultivars.

Keywords: wheat, cultivar, germination test, magnetic field

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Authors: D. K. Tiwari, Mukesh Kumar Awasthi, G. S. Agrawal

Abstract:

The effect of an axial electric field on the capillary instability of a cylindrical interface in the presence of heat and mass transfer has been investigated using viscous potential flow theory. In viscous potential flow, the viscous term in Navier-Stokes equation vanishes as vorticity is zero but viscosity is not zero. Viscosity enters through normal stress balance in the viscous potential flow theory and tangential stresses are not considered. A dispersion relation that accounts for the growth of axisymmetric waves is derived and stability is discussed theoretically as well as numerically. Stability criterion is given by critical value of applied electric field as well as critical wave number. Various graphs have been drawn to show the effect of various physical parameters such as electric field, heat transfer capillary number, conductivity ratio, permittivity ratio on the stability of the system. It has been observed that the axial electric field and heat and mass transfer both have stabilizing effect on the stability of the system.

Keywords: Capillary instability, Viscous potential flow, Heat and mass transfer, Axial electric field.

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Authors: Robert Setekera, Luuk Tiemeijer, Ramses van der Toorn

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In this paper an extensive verification of the extraction method (published earlier) that consistently accounts for self-heating and Early effect to accurately extract both base and thermal resistance of bipolar junction transistors is presented. The method verification is demonstrated on advanced RF SiGe HBTs were the extracted results for the thermal resistance are compared with those from another published method that ignores the effect of Early effect on internal base-emitter voltage and the extracted results of the base resistance are compared with those determined from noise measurements. A self-consistency of our method in the extracted base resistance and thermal resistance using compact model simulation results is also carried out in order to study the level of accuracy of the method.

Keywords: Avalanche, Base resistance, Bipolar transistor, Compact modeling, Early voltage, Thermal resistance, Self-heating, parameter extraction.

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Authors: Dae Hwan Kang, Young-IL Jeong, Chung-Wook Chung

Abstract:

pH-sensitive drug targeting using nanoparticles for cancer chemotherapy have been spotlighted in recent decades. Graft copolymer composed of poly (L-histidine) (PHS) and dextran (DexPHS) was synthesized and pH-sensitive nanoparticles were fabricated for pH-responsive drug delivery of doxorubicin (DOX). Nanoparticles of DexPHS showed pH-sensitive changes in particle sizes and drug release behavior, i.e. particle sizes and drug release rate were increased at acidic pH, indicating that DexPHS nanoparticles have pH-sensitive drug delivery potentials. Antitumor activity of DOX-incorporated DexPHS nanoparticles were studied using CT26 colorectal carcinoma cells. Results indicated that fluorescence intensity was higher at acidic pH than basic pH. These results indicated that DexPHS nanoparticles have pH-responsive drug targeting.

Keywords: pH-sensitive polymer, nanoparticles, block copolymer, poly (L-histidine).

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Authors: Afrasyab Rahnama, Kazem Poustini, Reza Tavakkol-Afshari, Afshin Tavakoli

Abstract:

Plant growth is affected by the osmotic stress as well as toxicity of salt in leaves. In order to study of salt stress effects on stomatal conductance and growth rate and relationship between them as wells osmotic and Na+-specific effects on these traits, four bread wheat genotypes differing in salt tolerance were selected. Salinity was applied when the leaf 4 was fully expanded. Sodium (Na+) concentrations in flag leaf blade at 3 salinity levels (0, 100 and 200 mM NaCl) were measured. Salt-tolerant genotypes showed higher stomatal conductance and growth rate compared to salt-sensitive ones. After 10 and 20 days exposure to salt, stomatal conductance and relative growth rate were reduced, but the reduction was greater in sensitive genotypes. Growth rate was reduced severely in the first period (1-10 days) of salt commencements and it was due to osmotic effect of salt not Na+ toxicity. In the second period (11-20 days) after salt treatment growth reduced only when salt accumulated to toxic concentrations in the leaves. A positive relationship between stomatal conductance and relative growth rate showed that stomatal conductance can be a reliable indicator of growth rate, and finally can be considered as a sensitive indicator of the osmotic stress. It seems 20 days after salinity, the major effect of salt, especially at low to moderate salinity levels on growth properties was due to the osmotic effect of salt, not to Na+-specific effects within the plant.

Keywords: Osmotic stress, relative growth rate, stomatal conductance, wheat.

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Authors: B. Dahiya, K.Batra, V.Prasad

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Artificial atoms are growing fields of interest due to their physical and optoelectronicapplications. The absorption spectra of the proposed artificial atom inpresence of Tera-Hertz field is investigated theoretically. We use the non-perturbativeFloquet theory and finite difference method to study the electronic structure of ArtificialAtom. The effect of static electric field on the energy levels of artificial atom is studied.The effect of orientation of static electric field on energy levels and diploe matrix elementsis also highlighted.

Keywords: Absorption spectra, Artificial atom, Floquet Theory, THz fields

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Authors: Steve Hung-Lung Tu, Yu-Hsuan Cheng

Abstract:

A novel and efficient approach to realize fractional-order capacitors is investigated in this paper. Meanwhile, a new approach which is more efficient for semiconductor implementation of fractional-order capacitors is proposed. The feasibility of the approach has been verified with the preliminary measured results.

Keywords: Fractional-order, field-effect transistors, RC transmission lines.

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