Search results for: doped semiconductor superlattices.

Authors: Pham Ngoc Thang, Le Thai Hung, Nguyen Quang Bau

Abstract:

The influence of confined acoustic phonons on the Shubnikov – de Haas magnetoresistance oscillations in a doped semiconductor superlattice (DSSL), subjected in a magnetic field, DC electric field, and a laser radiation, has been theoretically studied based on quantum kinetic equation method. The analytical expression for the magnetoresistance in a DSSL has been obtained as a function of external fields, DSSL parameters, and especially the quantum number m characterizing the effect of confined acoustic phonons. When m goes to zero, the results for bulk phonons in a DSSL could be achieved. Numerical calculations are also achieved for the GaAs:Si/GaAs:Be DSSL and compared with other studies. Results show that the Shubnikov – de Haas magnetoresistance oscillations amplitude decrease as the increasing of phonon confinement effect.

Keywords: Shubnikov–de Haas magnetoresistance oscillations, quantum kinetic equation, confined acoustic phonons, laser radiation, doped semiconductor superlattices.

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Authors: I.V. Matyushkin

Abstract:

The new architecture for quantum cellular automata is offered. A QCA cell includes two layers nc-Si, divided by a dielectric. Among themselves cells are connected by the bridge from a conductive material. The comparison is made between this and QCA, offered earlier by C. Lent's group.

Keywords: quantum cellular automata (QCA), nc-Si, Si/SiO2 superlattices, parallel computing

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Authors: Hongjun Liu, Cunxiao Gao, Jintao Tao, Wei Zhao, Yishan Wang

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A compact tunable 10 W picosecond source based on Yb-doped fiber amplification of gain switch laser diode has been demonstrated. A gain switch semiconductor laser diode was used as the seed source, and a multi-stage single mode Yb-doped fiber preamplifier was combined with two large mode area double-clad Yb-doped fiber main amplifiers to construct the amplification system. The tunable pulses with high stability and excellent beam quality (M2<1.2) of 10 W average power 150 ps pulse duration at 1 MHz repetition rate were obtained. The central wavelength with the line width of 2.5-3 nm was tunable from 1053 nm to 1073 nm.

Keywords: Fiber laser, fiber amplifier, picosecond laser, highpower laser

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Authors: Abdulamgid.T. Bouzed, Suleiman. M. Elhamali

Abstract:

The technical realization of data transmission using glass fiber began after the development of diode laser in year 1962. The erbium doped fiber amplifiers (EDFA's) in high speed networks allow information to be transmitted over longer distances without using of signal amplification repeaters. These kinds of fibers are doped with erbium atoms which have energy levels in its atomic structure for amplifying light at 1550nm. When a carried signal wave at 1550nm enters the erbium fiber, the light stimulates the excited erbium atoms which pumped with laser beam at 980nm as additional light. The wavelength and intensity of the semiconductor lasers depend on the temperature of active zone and the injection current. The present paper shows the effect of the diode lasers temperature and injection current on the optical amplification. From the results of in- and output power one may calculate the max. optical gain by erbium doped fiber amplifier.

Keywords: Amplifier, erbium doped fiber, gain, lasers, temperature.

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Authors: Omar Qasaimeh

Abstract:

The effect of the number of quantum dot (QD) layers on the saturated gain of doped QD semiconductor optical amplifiers (SOAs) has been studied using multi-population coupled rate equations. The developed model takes into account the effect of carrier coupling between adjacent layers. It has been found that increasing the number of QD layers (K) increases the unsaturated optical gain for K<8 and approximately has no effect on the unsaturated gain for K ≥ 8. Our analysis shows that the optimum ptype concentration that maximizes the unsaturated optical gain of the ground state is NA Ôëê 0.75 ×1018cm-3 . On the other hand, it has been found that the saturated optical gain for both the ground state and the excited state are strong function of both the doping concentration and K where we find that it is required to dope the dots with n-type concentration for very large K at high photon energy.

Keywords: doping, multilayer, quantum dot optical amplifier, saturated gain.

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Authors: P. Acosta-Santamaría, A. Ibatá-Soto, A. López-Vásquez

Abstract:

Organic compounds in wastewaters coming from textile and pharmaceutical industry generated multiple harmful effects on the environment and the human health. One of them is the methyl orange (MeO), an azoic dye considered to be a recalcitrant compound. The heterogeneous photocatalysis emerges as an alternative for treating this type of hazardous compounds, through the generation of OH radicals using radiation and a semiconductor oxide. According to the author’s knowledge, catalysts such as TiO₂ doped with metals show high efficiency in degrading MeO; however, this presents economic limitations on industrial scale. Black sand can be considered as a naturally doped catalyst because in its structure is common to find compounds such as titanium, iron and aluminum oxides, also elements such as zircon, cadmium, manganese, etc. This study reports the photocatalytic activity of the mineral black sand used as semiconductor in the discoloration of MeO by oxidation and reduction photocatalytic techniques. For this, magnetic composites from the mineral were prepared (RM, M1, M2 and NM) and their activity were tested through MeO discoloration while TiO₂ was used as reference. For the fractions, chemical, morphological and structural characterizations were performed using Scanning Electron Microscopy with Energy Dispersive X-Ray (SEM-EDX), X-Ray Diffraction (XRD) and X-Ray Fluorescence (XRF) analysis. M2 fraction showed higher MeO discoloration (93%) in oxidation conditions at pH 2 and it could be due to the presence of ferric oxides. However, the best result to reduction process was using M1 fraction (20%) at pH 2, which contains a higher titanium percentage. In the first process, hydrogen peroxide (H₂O₂) was used as electron donor agent. According to the results, black sand mineral can be used as natural semiconductor in photocatalytic process. It could be considered as a photocatalyst precursor in such processes, due to its low cost and easy access.

Keywords: Black sand mineral, methyl orange, oxidation, photocatalysis, reduction.

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Authors: F. Bendahma, S. Bentata, S. Cherid, A. Zitouni, S. Terkhi, T. Lantri, Y. Sefir, Z. F. Meghoufel

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We examine the electronic transport properties in Al_xGa_1-xAs/GaAs superlattices. Using the transfer-matrix technique and the exact Airy function formalism, we investigate theoretically the effect of structural parameters on the electronic energy spectra of trimer thickness barrier (TTB). Our numerical calculations showed that the localization length of the states becomes more extended when the disorder is correlated (trimer case). We have also found that the resonant tunneling time (RTT) is of the order of several femtoseconds.

Keywords: Electronic transport properties, structural parameters, superlattice, transfer-matrix technique.

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Authors: Maziar Noei

Abstract:

Adsorption of a boron nitride nanotube (BNNT) was examined toward ethylacetylene (C4H6) molecule by using density functional theory (DFT) calculations at the B3LYP/6-31G (d) level, and it was found that the adsorption energy (Ead) of ethylacetylene the pristine nanotubes is about -1.60kcal/mol. But when nanotube has been doped with Si and Al atoms, the adsorption energy of ethylacetylene molecule was increased. Calculation showed that when the nanotube is doping by Al, the adsorption energy is about - 24.19kcal/mol and also the amount of HOMO/LUMO energy gap (Eg) will reduce significantly. Boron nitride nanotube is a suitable adsorbent for ethylacetylene and can be used in separation processes ethylacetylene. It is seem that nanotube (BNNT) is a suitable semiconductor after doping, and the doped BNNT in the presence of ethylacetylene an electrical signal is generating directly and therefore can potentially be used for ethylacetylene sensors.

Keywords: Sensor, Nanotube, DFT, Ethylacetylene.

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Authors: N. Dahbi, M. Daoudi, A.Belghachi

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The present work deals with the calculation of transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in degenerate case. Due to their energy-band structure, this material becomes degenerate at moderate doping densities, which are around 1015 cm-3, so that the usual Maxwell-Boltzmann approximation is inaccurate in the determination of transport parameters. This problem is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic behavior of the bands may be approximated by the Kane model. The Monte Carlo (MC) simulation is used here to determinate transport parameters: drift velocity, mean energy and drift mobility versus electric field and the doped densities. The obtained results are in good agreement with those extracted from literature.

Keywords: degeneracy case, Hg0.8Cd0.2Te semiconductor, Monte Carlo simulation, transport parameters.

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Authors: Jihyun Park, Tae Il Lee, Jae-Min Myoung

Abstract:

A Silver (Ag) thin film is introduced as a template and doping source for vertically aligned p–type ZnO nanorods. ZnO nanorods were grown using an ammonium hydroxide based hydrothermal process. During the hydrothermal process, the Ag thin film was dissolved to generate Ag ions in the solution. The Ag ions can contribute to doping in the wurzite structure of ZnO and the (111) grain of Ag thin film can be the epitaxial temporal template for the (0001) plane of ZnO. Hence, Ag–doped p–type ZnO nanorods were successfully grown on the substrate, which can be an electrode or semiconductor for the device application. To demonstrate the potentials of this idea, p–n diode was fabricated and its electrical characteristics were demonstrated.

Keywords: Ag–doped ZnO nanorods, Hydrothermal process, p–n homo–junction diode, p–type ZnO.

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Authors: S. A. A. Oloomi , M. Omidpanah

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Semiconductor materials with coatings have a wide range of applications in MEMS and NEMS. This work uses transfermatrix method for calculating the radiative properties. Dopped silicon is used and the coherent formulation is applied. The Drude model for the optical constants of doped silicon is employed. Results showed that for the visible wavelengths, more emittance occurs in greater concentrations and the reflectance decreases as the concentration increases. In these wavelengths, transmittance is negligible. Donars and acceptors act similar in visible wavelengths. The effect of wave interference can be understood by plotting the spectral properties such as reflectance or transmittance of a thin dielectric film versus the film thickness and analyzing the oscillations of properties due to constructive and destructive interferences. But this effect has not been shown at visible wavelengths. At room temperature, the scattering process is dominated by lattice scattering for lightly doped silicon, and the impurity scattering becomes important for heavily doped silicon when the dopant concentration exceeds1018cm-3 .

Keywords: Dopant Concentrations, Radiative Properties, Nanoscale Multilayer, Coherent Formulation, Visible Wavelengths

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Authors: Syed Sohail Abbas, Sergei Popov

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In this paper, a fibre laser at 546 nm has been studied for a signal power of -30 dB. Er3+-doped ZBLAN fibre has been used by upconversion pumping of a 980 nm laser diode. Gain saturation effect has been investigated in detail. Laser performance has also been discussed. An efficiency of 35% has been calculated with a length of 5 mm fibre laser. Results show that Er3+-doped ZBLAN is a promising candidate for optical amplification at 546 nm.

Keywords: Compact visible lasers, Erbium doped, Gainsaturation, Green laser, Optical fibre lasers

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Authors: M. Gómez-Gómez, M. E. Sánchez-Vergara

Abstract:

Many sustainable approaches to generate electric energy have emerged in the last few decades; one of them is through solar cells. Yet, this also has the disadvantage of highly polluting inorganic semiconductor manufacturing processes. Therefore, the use of molecular semiconductors must be considered. In this work, allene compounds C24H26O4 and C24H26O5 were used as dopants to manufacture semiconductor films based on PbPc by high-vacuum evaporation technique. IR spectroscopy was carried out to determine the phase and any significant chemical changes which may occur during the thermal evaporation. According to UV-visible spectroscopy and Tauc’s model, the deposition process generated thin films with an activation energy range of 1.47 eV to 1.55 eV for direct transitions and 1.29 eV to 1.33 eV for indirect transitions. These values place the manufactured films within the range of low bandgap semiconductors. The flexible devices were manufactured: polyethylene terephthalate (PET), Indium tin oxide (ITO)/organic semiconductor/Cubic Close Packed (CCP). The characterization of the devices was carried out by evaluating electrical conductivity using the four-probe collinear method. I-V curves were obtained under different lighting conditions at room temperature. OS1 (PbPc/C24H26O4) showed an Ohmic behavior, while OS2 (PbPc/C24H26O5) reached higher current values at lower voltages. The results obtained show that the semiconductor devices doped with allene compounds can be used in the manufacture of optoelectronic devices.

Keywords: Electrical properties, optical gap, phthalocyanine, thin film.

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Authors: S. Manjunatha, M. S. Dharmaprakash

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Well-defined 2D Eu⁺³ co-doped ZrO₂: Gd⁺³ nanoparticles were successfully synthesized by microwave assisted solution combustion technique for luminescent applications. The present investigation reports the rapid and effective method for the synthesis of the Eu⁺³ co-doped ZrO₂:Gd⁺³ nanoparticles and study of the luminescence behavior of Eu⁺³ ion in ZrO₂:Gd⁺³ nanostructures. The optical properties of the prepared nanostructures were investigated by using UV-visible spectroscopy and photoluminescence spectra. The phase formation and the morphology of the nanoplatelets were studied by XRD, FESEM and HRTEM. The average grain size was found to be 45-50 nm. The presence of Gd³⁺ ion increases the crystallinity of the material and hence acts as a good nucleating agent. The ZrO₂:Gd³⁺ co-doped with Eu⁺³ nanoplatelets gives an emission at 607 nm, a strong red emission under the excitation wavelength of 255 nm.

Keywords: Nanoparticles, XRD, TEM, photoluminescence.

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Authors: Ashot Navasardian, Mariam Vardanian, Vladik Vardanian

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The photovoltaic and the semiconductor industries are in growth and it is necessary to supply a large amount of silicon to maintain this growth. Since silicon is still the best material for the manufacturing of solar cells and semiconductor components so the pure silicon like solar grade and semiconductor grade materials are demanded. There are two main routes for silicon production: metallurgical and chemical. In this article, we reviewed the electrotecnological installations and systems for semiconductor manufacturing. The main task is to design the installation which can produce SOG Silicon from river sand by one work unit.

Keywords: Metallurgical grade silicon, solar grade silicon, impurity, refining, plasma.

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Authors: Z. C. Chang, S. C. Liang

Abstract:

RF magnetron sputtering is used on the ceramic targets, each of which contains zinc oxide (ZnO), zinc oxide doped with aluminum (AZO) and zinc oxide doped with gallium (GZO). The electric conduction mechanism of the AZO and GZO films came mainly from the Al and Ga, the oxygen vacancies, Zn interstitial atoms, and Al and/or Ga interstitial atoms. AZO and GZO films achieved higher conduction than did ZnO film, it being ion vacant and nonstoichiometric. The XRD analysis showed a preferred orientation along the (002) plane for ZnO, AZO, and GZO films.

Keywords: ZnO, AZO, GZO, Doped, Sputtering

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Authors: Su Jeong Lee, Tae Il Lee, Jung Han Kim, Chul-Hong Kim, Gee Sung Chae, Jae-Min Myoung

Abstract:

The contact resistance between source/drain electrodes and semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT). In this work, we introduced a transparent and the solution prossable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (In2O3) sol gel thin film. By inserting low work function AZO NPs into the interface between the SWCNTs and the In2O3 which has a high energy barrier, we could obtain an electrical Ohmic contact between them. Finally, with the SWCNT-AZO NP bilayer electrodes, we successfully fabricated a TFT showing a field effect mobility of 5.38 cm2/V·s at 250°C.

Keywords: Single-walled carbon nanotube (SWCNT), Al-doped ZnO (AZO) nanoparticle, contact resistance, Thin-film transistor (TFT).

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Authors: Parekhan M. Aljaff, Banaz O. Rasheed

Abstract:

The exact gain shape profile of erbium doped fiber amplifiers (EDFA`s) are depends on fiber length and Er3 ion densities. This paper optimized several of erbium doped fiber parameters to obtain high performance characteristic at pump wavelengths of λp= 980 nm and λs= 1550 nm for three different pump powers. The maximum gain obtained for pump powers (10, 30 and 50mw) is nearly (19, 30 and 33 dB) at optimizations. The required numerical aperture NA to obtain maximum gain becomes less when pump power increased. The amplifier gain is increase when Er+3doped near the center of the fiber core. The simulation has been done by using optisystem 5.0 software (CAD for Photonics, a license product of a Canadian based company) at 2.5 Gbps.

Keywords: EDFA, Erbium Doped Fiber, optimization OpticalAmplifiers.

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Authors: R. M. López-Gutiérrez, L. Cardoza-Avendaño, H. Cervantes-De Ávila, J. A. Michel-Macarty, C. Cruz-Hernández, A. Arellano-Delgado, R. Carmona-Rodríguez

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In this paper, synchronization of multiple chaotic semiconductor lasers is achieved by appealing to complex system theory. In particular, we consider dynamical networks composed by semiconductor laser, as interconnected nodes, where the interaction in the networks are defined by coupling the first state of each node. An interest case is synchronized with master-slave configuration in star topology. Nodes of these networks are modeled for the laser and simulate by Matlab. These results are applicable to private communication.

Keywords: Synchronization, chaotic laser, network.

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Authors: Sae-Rom Pak, Seung Hwan Park, Jeong Ho Cho, Daewoong An, Cheong-Sool Park, Jun Seok Kim, Jun-Geol Baek

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It is important to predict yield in semiconductor test process in order to increase yield. In this study, yield prediction means finding out defective die, wafer or lot effectively. Semiconductor test process consists of some test steps and each test includes various test items. In other world, test data has a big and complicated characteristic. It also is disproportionably distributed as the number of data belonging to FAIL class is extremely low. For yield prediction, general data mining techniques have a limitation without any data preprocessing due to eigen properties of test data. Therefore, this study proposes an under-sampling method using support vector machine (SVM) to eliminate an imbalanced characteristic. For evaluating a performance, randomly under-sampling method is compared with the proposed method using actual semiconductor test data. As a result, sampling method using SVM is effective in generating robust model for yield prediction.

Keywords: Yield Prediction, Semiconductor Test Process, Support Vector Machine, Under Sampling

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Authors: Ki-Young Kim, Jae-Ho Lim, Deok-Min Kim, Seok-Yoon Kim

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Average current analysis checking the impact of current flow is very important to guarantee the reliability of semiconductor systems. As semiconductor process technologies improve, the coupling capacitance often become bigger than self capacitances. In this paper, we propose an analytic technique for analyzing average current on interconnects in multi-conductor structures. The proposed technique has shown to yield the acceptable errors compared to HSPICE results while providing computational efficiency.

Keywords: current moment, interconnect modeling, reliability analysis, worst-case switching

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Authors: T. P. Lu, B. N. Hwang, T. Z. Liou, Y. L. Lin

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Developing a supply chain management (SCM) system is costly, but important. However, because of its complicated nature, not many of such projects are considered successful. Few research publications directly relate to key success factors (KSFs) for implementing a SCM system. Motivated by the above, this research proposes a hierarchy of KSFs for SCM system implementation in the semiconductor industry by using a two-step approach. First, the literature review indicates the initial hierarchy. The second step includes a focus group approach to finalize the proposed KSF hierarchy by extracting valuable experiences from executives and managers that actively participated in a project, which successfully establish a seamless SCM integration between the world's largest semiconductor foundry manufacturing company and the world's largest assembly and testing company. Future project executives may refer the resulting KSF hierarchy as a checklist for SCM system implementation in semiconductor or related industries.

Keywords: Focus group, key success factors, supply chain management, semiconductor industry.

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Authors: Aïssa Manallah, Mohamed Bouafia

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Ellipsometry is an optical method based on the study of the behavior of polarized light. The light reflected on a surface induces a change in the polarization state which depends on the characteristics of the material (complex refractive index and thickness of the different layers constituting the device). The purpose of this work is to determine the optical properties of semiconductor thin films by ellipsometry. This paper describes the experimental aspects concerning the semiconductor samples, the SE400 ellipsometer principle, and the results obtained by direct measurements of ellipsometric parameters and modelling using appropriate software.

Keywords: Ellipsometry, optical constants, semiconductors, thin films.

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Authors: Ingy A. El-Khouly, Khaled S. El-Kilany, Aziz E. El-Sayed

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The process of wafer fabrication is arguably the most technologically complex and capital intensive stage in semiconductor manufacturing. This large-scale discrete-event process is highly reentrant, and involves hundreds of machines, restrictions, and processing steps. Therefore, production control of wafer fabrication facilities (fab), specifically scheduling, is one of the most challenging problems that this industry faces. Dispatching rules have been extensively applied to the scheduling problems in semiconductor manufacturing. Moreover, lot release policies are commonly used in this manufacturing setting to further improve the performance of such systems and reduce its inherent variability. In this work, simulation is used in the scheduling of re-entrant flow shop manufacturing systems with an application in semiconductor wafer fabrication; where, a simulation model has been developed for the Intel Five-Machine Six Step Mini-Fab using the ExtendTM simulation environment. The Mini-Fab has been selected as it captures the challenges involved in scheduling the highly re-entrant semiconductor manufacturing lines. A number of scenarios have been developed and have been used to evaluate the effect of different dispatching rules and lot release policies on the selected performance measures. Results of simulation showed that the performance of the Mini-Fab can be drastically improved using a combination of dispatching rules and lot release policy.

Keywords: Dispatching rules, lot release policy, re-entrant flowshop, semiconductor manufacturing.

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Authors: Sudip Dasgupta, Debosmita Pani, Kanchan Maji

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Calcium Phosphate Cement (CPC) due to its high bioactivity and optimum bioresorbability shows excellent bone regeneration capability. Despite it has limited applications as bone implant due to its macro-porous microstructure causing its poor mechanical strength. The reinforcement of apatitic CPCs with biocompatible fibre glass phase is an attractive area of research to improve upon its mechanical strength. Here, we study the setting behaviour of Si-doped and un-doped α tri calcium phosphate (α - TCP) based CPC and its reinforcement with addition of E-glass fibre. Alpha Tri calcium phosphate powders were prepared by solid state sintering of CaCO3 , CaHPO4 and Tetra Ethyl Ortho Silicate (TEOS) was used as silicon source to synthesize Si doped α-TCP powders. Both initial and final setting time of the developed cement was delayed because of Si addition. Crystalline phases of HA (JCPDS 9- 432), α-TCP (JCPDS 29-359) and β-TCP (JCPDS 9-169) were detected in the X-ray diffraction (XRD) pattern after immersion of CPC in simulated body fluid (SBF) for 0 hours to 10 days. As Si incorporation in the crystal lattice stabilized the TCP phase, Si doped CPC showed little slower rate of conversion into HA phase as compared to un-doped CPC. The SEM image of the microstructure of hardened CPC showed lower grain size of HA in un-doped CPC because of premature setting and faster hydrolysis of un-doped CPC in SBF as compared that in Si-doped CPC. Premature setting caused generation of micro and macro porosity in un-doped CPC structure which resulted in its lower mechanical strength as compared to that in Si-doped CPC. It was found that addition of 10 wt% of E-glass fibre into Si-doped α-TCP increased the average DTS of CPC from 8 MPa to 15 MPa as the fibres could resists the propagation of crack by deflecting the crack tip. Our study shows that biocompatible E-glass fibre in optimum proportion in CPC matrix can enhance the mechanical strength of CPC without affecting its biocompatibility. 

Keywords: Calcium phosphate cement, biocompatibility, e-glass fibre, diametral tensile strength.

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Authors: Adam Abdalla Elbashir Adam, Xiaomin Cheng, Xiang Shui Miao

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In this work, the effect of the magnetron sputtering system parameters on the optical properties of the Mn doped GeTe were investigated. The optical properties of the Ge_1-xMn_xTe thin films with different thicknesses are determined by analyzing the transmittance and reflectance data. The energy band gaps of the amorphous Mn-doped GeTe thin films with different thicknesses were calculated. The obtained results demonstrated that the energy band gap values of the amorphous films are quite different and they are dependent on the films thicknesses. The extinction coefficients of amorphous Mn-doped GeTe thin films as function of wavelength for different thicknesses were measured. The results showed that the extinction coefficients of all films are varying inversely with their optical transmission. Moreover, the results emphasis that, not only the microstructure, electrical and magnetic properties of Mn doped GeTe thin films vary with the films thicknesses but also the optical properties differ with the film thickness.

Keywords: Phase change magnetic materials, transmittance, absorbance, extinction coefficients.

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Authors: Pandiyarajan Thangaraj, Mangalaraja Ramalinga Viswanathan, Karthikeyan Balasubramanian, Héctor D. Mansilla, José Ruiz, David Contreras

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In this work, we report, a systematic study on the structural and optical properties of Pr-doped ZnO nanostructures and PVA:Zn98Pr2O polymer matrix nanocomposites free standing films. These particles are synthesized through simple wet chemical route and solution casting technique at room temperature, respectively. Structural studies carried out by X-ray diffraction method confirm that the prepared pure ZnO and Pr doped ZnO nanostructures are in hexagonal wurtzite structure and the microstrain is increased upon doping. TEM analysis reveals that the prepared materials are in sheet like nature. Absorption spectra show free excitonic absorption band at 370 nm and red shift for the Pr doped ZnO nanostructures. The PVA:Zn98Pr2O composite film exhibits both free excitonic and PVA absorption bands at 282 nm. Fourier transform infrared spectral studies confirm the presence of A1 (TO) and E1 (TO) modes of Zn-O bond vibration and the formation of polymer composite materials.

Keywords: Pr doped ZnO, polymer nanocomposites, optical properties.

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Authors: Youngji Yoo, Seung Hwan Park, Daewoong An, Sung-Shick Kim, Jun-Geol Baek

Abstract:

The yield management system is very important to produce high-quality semiconductor chips in the semiconductor manufacturing process. In order to improve quality of semiconductors, various tests are conducted in the post fabrication (FAB) process. During the test process, large amount of data are collected and the data includes a lot of information about defect. In general, the defect on the wafer is the main causes of yield loss. Therefore, analyzing the defect data is necessary to improve performance of yield prediction. The wafer bin map (WBM) is one of the data collected in the test process and includes defect information such as the fail bit patterns. The fail bit has characteristics of spatial point patterns. Therefore, this paper proposes the feature extraction method using the spatial point pattern analysis. Actual data obtained from the semiconductor process is used for experiments and the experimental result shows that the proposed method is more accurately recognize the fail bit patterns.

Keywords: Semiconductor, wafer bin map (WBM), feature extraction, spatial point patterns, contour map.

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Authors: Victor R. Thulari, John Akach, Haleden Chiririwa, Aoyi Ochieng

Abstract:

Solar-light activated titanium dioxide photocatalysts were prepared by hydrolysis of titanium (IV) isopropoxide with thiourea, followed by calcinations at 450 °C. The experiments demonstrated that methyl orange in aqueous solutions were successfully degraded under solar light using doped TiO₂. The photocatalytic oxidation of a mono azo methyl-orange dye has been investigated in multi ion doped TiO₂ and solar light. Solutions were irradiated by solar-light until high removal was achieved. It was found that there was no degradation of methyl orange in the dark and in the absence of TiO₂. Varieties of laboratory prepared TiO₂ catalysts both un-doped and doped using titanium (IV) isopropoxide and thiourea as a dopant were tested in order to compare their photoreactivity. As a result, it was found that the efficiency of the process strongly depends on the working conditions. The highest degradation rate of methyl orange was obtained at optimum dosage using commercially produced TiO₂. Our work focused on laboratory synthesized catalyst and the maximum methyl orange removal was achieved at 81% with catalyst loading of 0.04 g/L, initial pH of 3 and methyl orange concentration of 0.005 g/L using multi-ion doped catalyst. The kinetics of photocatalytic methyl orange dye stuff degradation was found to follow a pseudo-first-order rate law. The presence of the multi-ion dopant (thiourea) enhanced the photoefficiency of the titanium dioxide catalyst.

Keywords: Degradation, kinetics, methyl orange, photocatalysis.

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Authors: F. Hadjaj, A. Belghachi, A. Halmaoui, M. Belhadj, H. Mazouz

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A laser is essentially an optical oscillator consisting of a resonant cavity, an amplifying medium and a pumping source. In semiconductor diode lasers, the cavity is created by the boundary between the cleaved face of the semiconductor crystal and air, and has reflective properties as a result of the differing refractive indices of the two media. For a GaAs-air interface a reflectance of 0.3 is typical and therefore the length of the semiconductor junction forms the resonant cavity. To prevent light being emitted in unwanted directions from the junction, sides perpendicular to the required direction are roughened. The objective of this work is to simulate the optical resonator Fabry-Perot and explore its main characteristics, such as FSR, finesse, linewidth, transmission and so on, that describe the performance of resonator.

Keywords: Fabry-Perot Resonator, laser diode.

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