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Determination of Optical Constants of Semiconductor Thin Films by Ellipsometry
Authors: Aïssa Manallah, Mohamed Bouafia
Abstract:
Ellipsometry is an optical method based on the study of the behavior of polarized light. The light reflected on a surface induces a change in the polarization state which depends on the characteristics of the material (complex refractive index and thickness of the different layers constituting the device). The purpose of this work is to determine the optical properties of semiconductor thin films by ellipsometry. This paper describes the experimental aspects concerning the semiconductor samples, the SE400 ellipsometer principle, and the results obtained by direct measurements of ellipsometric parameters and modelling using appropriate software.Keywords: Ellipsometry, optical constants, semiconductors, thin films.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1125757
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[1] R. M. A. Azzam and N. M. Bashara, Ellipsometry and Polarized Light, North-Holland, 1987.
[2] M. Bahoura, et al., “Ultraviolet radiation sensing in composite oxide semiconductor films”, Appl. Phys. Lett., 2008, 93, 222112.
[3] J.-Y. Duboz, “Semiconductor materials, large-gap III-V GaN-based (Translation: Matériaux semi-conducteurs à grand gap III-V à base de GaN)”, Techniques de l’ingénieur, E1995 v1, France, 1999.
[4] M. Fried, T. Lohner, W. A. M. Aarnink, L. J. Hanekamp and A. van Silfhout, “Nondestructive determination of damage depth profiles in ion-implanted semiconductors by spectroscopic ellipsometry using different optical models”, J. Appl. Phys., 1992, 71, 2835.
[5] J. Han, A. K. Azad, and W. Zhang, “Far-Infrared Characteristics of Bulk and Nanostructured Wide-Bandgap Semiconductors”, Journal of Nanoelectronics and Optoelectronics, 2007, Vol. 2, pp. 222–233.