Search results for: cylindrical silicon nanowires

Authors: А. V. Panko, Е. V. Ablets, I. G. Kovzun, М. А. Ilyashov

Abstract:

Based upon generalized analysis of modern know-how in the sphere of processing, concentration and purification of iron-ore raw materials (IORM), in particular, the most widespread ferrioxide-silicate materials (FOSM), containing impurities of phosphorus and other elements compounds, noted special role of nanotechnological initiatives in improvement of such processes. Considered ideas of role of nanoparticles in processes of FOSM carbonization with subsequent direct reduction of ferric oxides contained in them to metal phase, as well as in processes of alkali treatment and separation of powered iron from phosphorus compounds. Using the obtained results the wasteless method of solid-phase processing, concentration and purification of IORM and FOSM from compounds of phosphorus, silicon and other impurities was developed and it excels known methods of direct iron reduction from iron ores and metallurgical slimes.

Keywords: Iron ores, solid-phase reduction, nanoparticles in reduction and purification of iron from silicon and phosphorus, wasteless method of ores processing.

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Authors: Rizwan Asghar, Dake Liu

Abstract:

A hardware efficient, multi mode, re-configurable architecture of interleaver/de-interleaver for multiple standards, like DVB, WiMAX and WLAN is presented. The interleavers consume a large part of silicon area when implemented by using conventional methods as they use memories to store permutation patterns. In addition, different types of interleavers in different standards cannot share the hardware due to different construction methodologies. The novelty of the work presented in this paper is threefold: 1) Mapping of vital types of interleavers including convolutional interleaver onto a single architecture with flexibility to change interleaver size; 2) Hardware complexity for channel interleaving in WiMAX is reduced by using 2-D realization of the interleaver functions; and 3) Silicon cost overheads reduced by avoiding the use of small memories. The proposed architecture consumes 0.18mm2 silicon area for 0.12μm process and can operate at a frequency of 140 MHz. The reduced complexity helps in minimizing the memory utilization, and at the same time provides strong support to on-the-fly computation of permutation patterns.

Keywords: Hardware interleaver implementation, WiMAX, DVB, block interleaver, convolutional interleaver, hardwaremultiplexing.

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Authors: P. Vaculik

Abstract:

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber. 

Keywords: SiC, Si, MOSFET, IGBT, SBD, RC snubber.

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Authors: Anatoly D. Pluzhnikov, Elena N. Pribludova, Alexander G. Ryndyk

Abstract:

In conjunction with the problem of the target selection on a clutter background, the analysis of the scanning rate influence on the spatial-temporal signal structure, the generalized multivariate correlation function and the quality of the resolution with the increase pulse repetition frequency is made. The possibility of the object space-distance resolution, which is conditioned by the range-to-angle conversion with an increased scanning rate, is substantiated. The calculations for the real cylindrical array at high scanning rate are presented. The high scanning rate let to get the signal to noise improvement of the order of 10 dB for the space-time signal processing.

Keywords: Antenna pattern, array, signal processing, spatial resolution.

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Authors: Paniz Tafakori, Ali A. Orouji

Abstract:

In this paper the features of multiple material gate silicon-on-insulator MOSFETs are presented and compared with single material gate silicon-on-insulator MOSFET structures. The results indicate that the multiple material gate structures reduce short channel effects such as drain induce barrier lowering, hot electron effect and better current characteristics in comparison with single material structures

Keywords: Short-channel effects (SCEs), Dual material gate (DMG), Triple material gate (TMG), Pentamerous material gate (PMG).

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Authors: Chao He, Shunhua Zhou, Peijun Guo

Abstract:

The vast majority of existing underground railway lines consist of twin tunnels. In this paper, the dynamic interaction between two neighboring tunnels in a layered half-space is investigated by an analytical model. The two tunnels are modelled as cylindrical thin shells, while the soil in the form of a layered half-space with two cylindrical cavities is simulated by the elastic continuum theory. The transfer matrix method is first used to derive the relationship between the plane wave vectors in arbitrary layers and the source layer. Thereafter, the wave translation and transformation are introduced to determine the plane and cylindrical wave vectors in the source layer. The solution for the dynamic interaction between twin tunnels in a layered half-space is obtained by means of the compatibility of displacements and equilibrium of stresses on the two tunnel–soil interfaces. By coupling the proposed model with a fully track model, the train-induced vibrations from twin tunnels in a multi-layered half-space are investigated. The numerical results demonstrate that the existence of a neighboring tunnel has a significant effect on ground vibrations.

Keywords: Underground railway, twin tunnels, wave translation and transformation, transfer matrix method.

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Authors: Mohammad Asif

Abstract:

Heterogeneous catalysis is vital for a number of chemical, refinery and pollution control processes. The use of catalyst pellets of hollow cylindrical shape provide several distinct advantages over other common shapes, and can therefore help to enhance conversion levels in reactors. A better utilization of the catalytic material is probably most notable of these features due to the absence of the pellet core, which helps to significantly lower the effect of the internal transport resistance. This is reflected in the enhancement of the effectiveness factor. For the case of the first order irreversible kinetics, a substantial increase in the effectiveness factor can be obtained by varying shape parameters. Important shape parameters of a finite hollow cylinder are the ratio of the inside to the outside radii (κ) and the height to the diameter ratio (γ). A high value of κ the generally helps to enhance the effectiveness factor. On the other hand, lower values of the effectiveness factors are obtained when the dimension of the height and the diameter are comparable. Thus, the departure of parameter γ from the unity favors higher effectiveness factor. Since a higher effectiveness factor is a measure of a greater utilization of the catalytic material, higher conversion levels can be achieved using the hollow cylindrical pellets possessing optimized shape parameters.

Keywords: Finite hollow cylinder, Catalyst pellet, Effectiveness factor, Thiele Modulus, Conversion

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Authors: Wei Jun-xia, Yuan Guang-wei, Yang Shu-lin, Shen Wei-dong

Abstract:

In order to make conventional implicit algorithm to be applicable in large scale parallel computers , an interface prediction and correction of discontinuous finite element method is presented to solve time-dependent neutron transport equations under 2-D cylindrical geometry. Domain decomposition is adopted in the computational domain.The numerical experiments show that our parallel algorithm with explicit prediction and implicit correction has good precision, parallelism and simplicity. Especially, it can reach perfect speedup even on hundreds of processors for large-scale problems.

Keywords: Transport Equation, Discontinuous Finite Element, Domain Decomposition, Interface Prediction And Correction

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Authors: Yong Seo Koo, Jong Ho Nam, Yong Nam Choi, Dae Yeol Yoo, Jung Woo Han

Abstract:

This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage.

Keywords: ESD (Electro-Static Discharge), SCR (Silicon Controlled Rectifier), holding Voltage.

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Authors: N. Sumathi, R. Srinivasa Rao

Abstract:

This paper presents the experimental results of 11 kV and 33 kV silicon composite insulators under artificial salt and urea polluted conditions. The tests were carried out under different seasons like summer, winter, and monsoon. The artificial pollution is prepared by properly dissolving the salt and urea in the water. The prepared salt and urea pollutions are sprayed on the insulators and dried up for sufficiently large time. The process is continued until a uniform layer is formed on the surface of insulator. For each insulator rating, four samples were tested. The maximum leakage current and breakdown voltage were measured. From experimental data, performance of test specimen is evaluated by comparing breakdown voltage and leakage current during different seasons when exposed to salt and urea polluted conditions. From these results the performance of the insulators can be predicted when they are installed in industrial, agricultural, and coastal areas. The experimental tests were carried out in the High Voltage laboratory using two stage cascade transformer having the rating of 1000 kVA, 500 kV.

Keywords: Silicon composite insulators, Urea pollution, Leakage current, Breakdown voltage, salt pollution, artificial pollution.

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Authors: Pujarini Ghosh A, Rishu Chaujar B, Subhasis Haldar C, R.S Gupta D, Mridula Gupta E

Abstract:

In this paper, an analytical modeling is presentated to describe the channel noise in GME SGT/CGT MOSFET, based on explicit functions of MOSFETs geometry and biasing conditions for all channel length down to deep submicron and is verified with the experimental data. Results shows the impact of various parameters such as gate bias, drain bias, channel length ,device diameter and gate material work function difference on drain current noise spectral density of the device reflecting its applicability for circuit design applications.

Keywords: Cylindrical/Surrounded gate (SGT/CGT) MOSFET, Gate Material Engineering (GME), Spectral Noise and short channeleffect (SCE).

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Authors: M. R. Daneshgar, S. E. Habibi, E. Daneshgar, A. Daneshgar

Abstract:

In this paper, a two-dimensional method is developed to simulate the fillet welds in a stiffened cylindrical shell, using finite element method. The stiffener material is aluminum 2519. The thermo-elasto-plastic analysis is used to analyze the thermo-mechanical behavior. Due to the high heat flux rate of the welding process, two uncouple thermal and mechanical analysis are carried out instead of performing a single couple thermo-mechanical simulation. In order to investigate the effects of the welding procedures, two different welding techniques are examined. The resulted residual stresses and distortions due to different welding procedures are obtained. Furthermore, this study employed the technique of element birth and death to simulate the weld filler variation with time in fillet welds. The obtained results are in good agreement with the published experimental and three-dimensional numerical simulation results. Therefore, the proposed 2D modeling technique can effectively give the corresponding results of 3D models. Furthermore, by inspection of the obtained residual hoop and transverse stresses and angular distortions, proper welding procedure is suggested.

Keywords: Stiffened cylindrical shell, fillet welds, residual stress, angular distortion, finite element method.

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Authors: Bang-Shiuh Chen, Lien-Wen Chen

Abstract:

We have devised a thermal carpet cloak theoretically and implemented in silicon using layered metamaterial. The layered metamaterial is composed of single crystalline silicon and its phononic crystal. The design is based on a coordinate transformation. We demonstrate the result with numerical simulation. Great cloaking performance is achieved as a thermal insulator is well hidden under the thermal carpet cloak. We also show that the thermal carpet cloak can even the temperature on irregular surface. Using thermal carpet cloak to manipulate the heat conduction is effective because of its low complexity.

Keywords: Metamaterial, heat conduction, cloaking, phononic crystal.

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Authors: Shiyang Zhu, G. Q. Lo, D. L. Kwong

Abstract:

Silicon photonics is merging as a unified platform for driving photonic based telecommunications and for local photonic based interconnect but it suffers from large footprint as compared with the nanoelectronics. Plasmonics is an attractive alternative for nanophotonics. In this work, two CMOS compatible plasmonic waveguide platforms are compared. One is the horizontal metal-insulator-Si-insulator-metal nanoplasmonic waveguide and the other is metal-insulator-Si hybrid plasmonic waveguide. Various passive and active photonic devices have been experimentally demonstrated based on these two plasmonic waveguide platforms.

Keywords: Plasmonics, on-chip integration, Silicon photonics.

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Authors: Bachir Chemani, Rachid Halfaoui

Abstract:

The aim of work is to define the distribution density of winding yarn on cylindrical and conical bobbins. It is known that parallel winding gives greater density and more regular distribution, but the unwinding of yarn is much more difficult for following process. The conical spool has an enormous advantage during unwinding and may contain a large amount of yarns, but the density distribution is not regular because of difference in diameters. The variation of specific density over the reel height is explained generally by the sudden change of winding speed due to direction movement variation of yarn. We determined the conditions of uniform winding and developed a calculate model to the change of the specific density of winding wire over entire spool height.

Keywords: Textile, cylindrical bobbins, conical bobbins, parallel winding, cross winding.

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Authors: Z. X. Chen, N. Singh, D.-L. Kwong

Abstract:

This paper presents a vertical silicon nanowire n- MOSFET integrated with a CMOS-compatible fully-silicided (FUSI) NiSi2 gate. Devices with nanowire diameter of 50nm show good electrical performance (SS < 70mV/dec, DIBL < 30mV/V, Ion/Ioff > 107). Most significantly, threshold voltage tunability of about 0.2V is shown. Although threshold voltage remains low for the 50nm diameter device, it is expected to become more positive as nanowire diameter reduces.

Keywords: NiSi , fully-silicided (FUSI) gate, vertical siliconnanowire (SiNW), CMOS compatible.

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Authors: Jakub Havlicek, Jiri Cajthaml

Abstract:

The article describes the effect of the replacement of the used reference coordinate system in the georeferencing of an old map of Europe. The map was georeferenced into three types of projection – the equal-area conic (original cartographic projection), cylindrical Plate Carrée and cylindrical Mercator map projection. The map was georeferenced by means of the affine and the second-order polynomial transformation. The resulting georeferenced raster datasets from the Plate Carrée and Mercator projection were projected into the equal-area conic projection by means of projection equations. The output is the comparison of drawn graphics, the magnitude of standard deviations for individual projections and types of transformation.

Keywords: Georeferencing, reference coordinate system, transformation, standard deviation.

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Authors: Zone-Ching Lin, Meng-Hua Lin, Ying-Chih Hsu

Abstract:

This paper uses quasi-steady molecular statics model and diamond tool to carry out simulation temperature rise of nanoscale orthogonal cutting single-crystal silicon. It further qualitatively analyzes temperature field of silicon workpiece without considering heat transfer and considering heat transfer. This paper supposes that the temperature rise of workpiece is mainly caused by two heat sources: plastic deformation heat and friction heat. Then, this paper develops a theoretical model about production of the plastic deformation heat and friction heat during nanoscale orthogonal cutting. After the increased temperature produced by these two heat sources are added up, the acquired total temperature rise at each atom of the workpiece is substituted in heat transfer finite difference equation to carry out heat transfer and calculates the temperature field in each step and makes related analysis.

Keywords: Quasi-steady molecular statics, Nanoscale orthogonal cutting, Finite difference, Temperature.

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Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

Abstract:

Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, Kink Effect, SILVACO TCAD.

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Authors: D.N Awang Sh'ri, E. Hamzah

Abstract:

The deposition of diamond films on a Si3N4 substrate is an attractive technique for industrial applications because of the excellent properties of diamond. Pretreatment of substrate is very important prior to diamond deposition to promote nucleation and adhesion between coating and substrate. Deposition of nanocrystalline diamonds films on silicon nitride substrate have been carried out by HF-CVD technique using mixture of methane and hydrogen gases. Different pretreatment of substrate including chemical etching consists of hot acid etching and basic etching and mechanical etching were used to study the quality of diamond formed on the substrate. The structure and morphology of diamond coating have been studied using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM) while diamond film quality has been characterized using Raman spectroscopy. AFM was used to investigate the effect of chemical etching and mechanical pretreatment on the surface roughness of the substrates and the resultant morphology of nanocrystalline diamond. It was found that diamond film deposited on as-received, basic etched and grinded substrate shows the morphology of cauliflower while blasted and acidic etched substrates produce smooth, continuous diamond film. However, the Raman investigation did not show any deviation in quality of diamond film for any pretreatment.

Keywords: Nanocrystalline diamond, Chemical VaporDeposition, Pretreatment, Silicon Nitride

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Authors: Jianwen Li, Hongfang Ma, Weixin Qian, Haitao Zhang, Weiyong Ying

Abstract:

Methanol-to-propylene conversion was carried out in a continuous-flow fixed-bed reactor over nano-sized HZSM-5 zeolites. The HZSM-5 catalysts were synthesized with different Si/Al ratio and silicon sources, and treated with NaOH. The structural property, morphology, and acidity of catalysts were measured by XRD, N₂ adsorption, FE-SEM, TEM, and NH₃-TPD. The results indicate that the increment of Si/Al ratio decreased the acidity of catalysts and then improved propylene selectivity, while silicon sources had slight impact on the acidity but affected the product distribution. The desilication after alkali treatment could increase intracrystalline mesopores and enhance propylene selectivity.

Keywords: Alkali treatment, HZSM-5, methanol-to-propylene, synthesis condition.

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Authors: Smaali Assia, Outemzabet Ratiba, Media El Mahdi, Kadi Mohamed

Abstract:

Films of pure tin oxide SnO2 and in presence of antimony atoms (SnO2-Sb) deposited onto glass substrates have shown a sufficiently high energy gap to be transparent in the visible region, a high electrical mobility and a carrier concentration which displays a good electrical conductivity [1]. In this work, the effects of polycrystalline silicon substrate on the optical properties of pure and Sb doped tin oxide is investigated. We used the APCVD (atmospheric pressure chemical vapour deposition) technique, which is a low-cost and simple technique, under nitrogen ambient, for growing this material. A series of SnO2 and SnO2-Sb have been deposited onto polycrystalline silicon substrates with different contents of antimony atoms at the same conditions of deposition (substrate temperature, flow oxygen, duration and nitrogen atmosphere of the reactor). The effect of the substrate in terms of morphology and nonlinear optical properties, mainly the reflectance, was studied. The reflectance intensity of the device, compared to the reflectance of tin oxide films deposited directly on glass substrate, is clearly reduced on the overall wavelength range. It is obvious that the roughness of the poly-c silicon plays an important role by improving the reflectance and hence the optical parameters. A clear shift in the minimum of the reflectance upon doping level is observed. This minimum corresponds to strong free carrier absorption, resulting in different plasma frequency. This effect is followed by an increase in the reflectance depending of the antimony doping. Applying the extended Drude theory to the combining optical and electrical obtained results these effects are discussed.

Keywords: Doping, oxide, reflectance.

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Authors: T. Brettschneider, C. Dorrer, H. Suy, T. Braun, E. Jung, R. Hoofman, M. Bründel, R. Zengerle, F. Lärmer

Abstract:

We present an integration approach of a CMOS biosensor into a polymer based microfluidic environment suitable for mass production. It consists of a wafer-level-package for the silicon die and laser bonding process promoted by an intermediate hot melt foil to attach the sensor package to the microfluidic chip, without the need for dispensing of glues or underfiller. A very good condition of the sensing area was obtained after introducing a protection layer during packaging. A microfluidic flow cell was fabricated and shown to withstand pressures up to Δp = 780 kPa without leakage. The employed biosensors were electrically characterized in a dry environment.

Keywords: CMOS biosensor, laser bonding, silicon polymer integration, wafer level packaging.

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Authors: G. Rosaz, V. Semblanet, S. Calatroni, A. Sublet, M. Taborelli

Abstract:

We report in this paper the design and qualification of a cylindrical unbalanced magnetron source. The dedicated magnetic assemblies were simulated using a finite element model. A hall-effect magnetic probe was then used to characterize those assemblies and compared to the theoretical magnetic profiles. These show a good agreement between the expected and actual values. The qualification of the different magnetic assemblies was then performed by measuring the ion flux density reaching the surface of the sample to be coated using a commercial retarding field energy analyzer. The strongest unbalanced configuration shows an increase from 0.016 A.cm^-2 to 0.074 A.cm^-2 of the ion flux density reaching the sample surface compared to the standard balanced configuration for a pressure 5.10^-3 mbar and a plasma source power of 300 W.

Keywords: Ion energy distribution, niobium, retarding field energy analyzer, sputtering, SRF cavity, unbalanced magnetron.

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Authors: Muhibul Haque Bhuyan

Abstract:

This paper reports on the impact study with the variation of the gate insulation material and thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate materials used here are silicon dioxide (SiO₂), aluminum silicate (Al₂SiO₅), silicon nitride (Si₃N₄), alumina (Al₂O₃), hafnium silicate (HfSiO₄), tantalum pentoxide (Ta₂O₅), hafnium dioxide (HfO₂), zirconium dioxide (ZrO₂), and lanthanum oxide (La₂O₃) upon a p-type silicon substrate material. The gate insulation thickness was varied from 2.0 nm to 3.5 nm for a 50 nm channel length pocket implanted n-MOSFET. There are several models available for this device. We have studied and simulated threshold voltage model incorporating drain and substrate bias effects, surface potential, inversion layer charge, pinch-off voltage, effective electric field, inversion layer mobility, and subthreshold drain current models based on two linear symmetric pocket doping profiles. We have changed the values of the two parameters, viz. gate insulation material and thickness gradually fixing the other parameter at their typical values. Then we compared and analyzed the simulation results. This study would be helpful for the nano-scaled MOS device designers for various applications to predict the device behavior.

Keywords: Linear symmetric pocket profile, pocket implanted n-MOS Device, model, impact of gate material, insulator thickness.

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Authors: Hitham M. Tlilan

Abstract:

Using finite element method (FEM), the elastic new strain-concentration factor (SNCF) of cylindrical bars with circumferential flat-bottom groove is studied. This new SNCF has been defined under triaxial stress state. The employed specimens have constant groove depth with net section and gross diameters of 10.0 and 16.7 mm, respectively. The length of flatness ao has been varied form 0.0 ~12.5 mm to study the elastic SNCF of this type of geometrical irregularities. The results that the elastic new SNCF rapidly drops from its elastic value of the groove with ao = 0.0, i.e. circumferential U-notch, and reaches minimum value at ao = 2 mm. After that the elastic new SNCF becomes nearly constant with increasing flatness length (ao). The value of tensile load at yielding at the groove root increases with increasing ao. The current results show that severity of the notch decreases with increasing flatness length ao.

Keywords: Bar, groove, strain, tension

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Authors: Amrita Tripathi, Neeru Adlakha

Abstract:

Calcium [Ca2+] dynamics is studied as a potential form of neuron excitability that can control many irregular processes like metabolism, secretion etc. Ca2+ ion enters presynaptic terminal and increases the synaptic strength and thus triggers the neurotransmitter release. The modeling and analysis of calcium dynamics in neuron cell becomes necessary for deeper understanding of the processes involved. A mathematical model has been developed for cylindrical shaped neuron cell by incorporating physiological parameters like buffer, diffusion coefficient, and association rate. Appropriate initial and boundary conditions have been framed. The closed form solution has been developed in terms of modified Bessel function. A computer program has been developed in MATLAB 7.11 for the whole approach.

Keywords: Laplace Transform, Modified Bessel function, reaction diffusion equation, diffusion coefficient, excess buffer, calcium influx

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Authors: V. E. Messerle, O. A. Lavrichshev, A. B. Ustimenko

Abstract:

The article presents a plasma chemical technology for processing solid fuels, using examples of bituminous and brown coals. Thermodynamic and experimental investigation of the technology was made. The technology allows producing synthesis gas from the coal organic mass and valuable components (technical silicon, ferrosilicon, aluminum, and carbon silicon, as well as microelements of rare metals, such as uranium, molybdenum, vanadium, etc.) from the mineral mass. The thusly produced highcalorific synthesis gas can be used for synthesis of methanol, as a high-calorific reducing gas instead of blast-furnace coke as well as power gas for thermal power plants.

Keywords: Gasification, mineral mass, organic mass, plasma, processing, solid fuel, synthesis gas, valuable components.

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Authors: Kyoung-il Do, Byung-seok Lee, Hee-guk Chae, Jeong-yun Seo Yong-seo Koo

Abstract:

In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage.

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Authors: Hamed Bagheri, Seyd Javid Shariati

Abstract:

The effects of type and amount of solvent on lubricant which is used in disposable medical devices are investigated in this article. Two kinds of common solvent, n-Hexane and n-Heptane, are used. The mechanical behavior of syringe has shown that n-Heptane has better mixing ratio and also more effective spray process in the barrel of syringe than n-Hexane because of similar solubility parameter to silicon oil. The results revealed that movement of plunger in the barrel increases when pure silicone is used because non-uniform film is created on the surface of barrel, and also, it seems that the form of silicon is converted from oil to gel due to sterilization process. The results showed that the convenient mixing ratio of solvent/lubricant oil is 80/20.

Keywords: Disposable medical devices, lubricant oil, solvent effect, solubility parameter.

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