Search results for: Thin Wafer

Authors: Tim Giesen, Christian Fischmann, Fabian Böttinger, Alexander Ehm, Alexander Verl

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In a state-of-the-art industrial production line of photovoltaic products the handling and automation processes are of particular importance and implication. While processing a fully functional crystalline solar cell an as-cut photovoltaic wafer is subject to numerous repeated handling steps. With respect to stronger requirements in productivity and decreasing rejections due to defects the mechanical stress on the thin wafers has to be reduced to a minimum as the fragility increases by decreasing wafer thicknesses. In relation to the increasing wafer fragility, researches at the Fraunhofer Institutes IPA and CSP showed a negative correlation between multiple handling processes and the wafer integrity. Recent work therefore focused on the analysis and optimization of the dry wafer stack separation process with compressed air. The achievement of a wafer sensitive process capability and a high production throughput rate is the basic motivation in this research.

Keywords: Automation, Photovoltaic Manufacturing, Thin Wafer, Material Handling

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Authors: Z. W. Zhong, C. Xu, W. K. Choi

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To build a thin fan-out wafer-level package, the package had to be ground to a thin level. In this work, the influence of the grinding processes on the strength of the fan-out wafer-level packages was investigated. After different grinding processes, all specimens were placed on a three-point-bending fixture installed on a universal tester for three-point-bending testing, and the strength of the fan-out wafer-level packages was measured. The experiments revealed that the average flexure strength increased with the decreasing surface roughness height of the fan-out wafer-level package tested. The grinding processes had a significant influence on the strength of the fan-out wafer-level packages investigated.

Keywords: FOWLP strength, surface roughness, three-point bending, grinding.

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Authors: Ian Kree, Davina Chin Lee Yien

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This paper presents Cost per Equivalent Wafer Out, which we find useful in wafer fab operational cost monitoring and controlling. It removes the loading and product mix effect in the cost variance analysis. The operation heads, therefore, could immediately focus on identifying areas for cost improvement. Without this, they would have to measure the impact of the loading variance and product mix variance between actual and budgeted prior to make any decision on cost improvement. Cost per Equivalent Wafer Out, thereby, increases efficiency in wafer fab operational cost monitoring and controlling.

Keywords: Cost Control, Cost Variance, Operational Expenditure, Semiconductor.

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Authors: N. Asadi, M. Jackson

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Today, the central role of industrial robots in automation in general and in material handling in particular is crystal clear. Based on the current status of Photovoltaics and by focusing on lightweight material handling, PV industry has turned into a potential candidate for introducing a fresh “pick and place" robot technology. Thus, to examine the industry needs in this regard, firstly the best suited applications for such robotic automation,and then the essential prerequisites in PV industry should be identified. The objective of this paper is to present holistic views on the industry trends, general automation status and existing challenges facing lightweight robotic material handling in PV Silicon Wafer and Thin Film technologies. The results of this study show that currently no uniform pick and place solution prevails among PV Silicon Wafer manufacturers and the industry calls for a new robot solution to satisfy its needs in new directions.

Keywords: Automation, Material handling, Photovoltaic, Robot.

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Authors: Sheng-Ming Huang, Nan-Chyuan Tsai, Chih-Che Lin, Chun-Chi Lin

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An innovative design for intelligent Chemical Mechanical Polishing (CMP) system is proposed and verified by experiments in this report. On-line measurement and real-time feedback are integrated to eliminate the shortcomings of traditional approaches, e.g., the batch-to-batch discrepancy of required polishing time, over consumption of chemical slurry, and non-uniformity across the wafer. The major advantage of the proposed method is that the finish of local surface roughness can be consistent, no matter where the inner-ring region or outer-ring region is concerned. Secondly, it is able to eliminate the Edge effect. Conventionally, the interfacial induced stress near the wafer edge is generally much higher than that near the wafer center. At last, by using the proposed intelligent chemical mechanical polishing strategy, the cost of the entire machining cycle can be much reduced while the quality of the finished goods certainly upgraded.

Keywords: Chemical Mechanical Polishing, Active Magnetic Actuator, On-Line Measurement.

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Authors: Vincent King Soon Wong, Hong Seng Ng, Florinna Sim

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Negative Bias Temperature Instability (NBTI) is one of the critical degradation mechanisms in semiconductor device reliability that causes shift in the threshold voltage (Vth). However, thorough understanding of this reliability failure mechanism is still unachievable due to a recovery characteristic known as NBTI recovery. This paper will demonstrate the severity of NBTI recovery as well as one of the effective methods used to mitigate, which is the minimization of measurement system delays. Comparison was done in between two measurement systems that have significant differences in measurement delays to show how NBTI recovery causes result deviations and how fast measurement systems can mitigate NBTI recovery. Another method to minimize NBTI recovery without the influence of measurement system known as Fast Wafer Level Reliability (FWLR) NBTI was also done to be used as reference.

Keywords: Fast vs slow BTI, Fast wafer level reliability, Negative bias temperature instability, NBTI measurement system, metal-oxide-semiconductor field-effect transistor, MOSFET, NBTI recovery, reliability.

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Authors: Youngji Yoo, Seung Hwan Park, Daewoong An, Sung-Shick Kim, Jun-Geol Baek

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The yield management system is very important to produce high-quality semiconductor chips in the semiconductor manufacturing process. In order to improve quality of semiconductors, various tests are conducted in the post fabrication (FAB) process. During the test process, large amount of data are collected and the data includes a lot of information about defect. In general, the defect on the wafer is the main causes of yield loss. Therefore, analyzing the defect data is necessary to improve performance of yield prediction. The wafer bin map (WBM) is one of the data collected in the test process and includes defect information such as the fail bit patterns. The fail bit has characteristics of spatial point patterns. Therefore, this paper proposes the feature extraction method using the spatial point pattern analysis. Actual data obtained from the semiconductor process is used for experiments and the experimental result shows that the proposed method is more accurately recognize the fail bit patterns.

Keywords: Semiconductor, wafer bin map (WBM), feature extraction, spatial point patterns, contour map.

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Authors: Hung-Wei Wu, Chien-Hsun Chu, Ru-Yuan Yang, Chin-Min Hsiung

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In this paper, we proposed the effects of Mo thickness on the properties of AZO/Mo/AZO multilayer thin films for opto-electronics applications. The structural, optical and electrical properties of AZO/Mo/AZO thin films were investigated. Optimization of the thin films coatings resulted with low resistivity of 9.98 × 10-5 )-cm, mobility of 12.75 cm2/V-s, carrier concentration of 1.05 × 1022 cm-3, maximum transmittance of 79.13% over visible spectrum of 380 – 780 nm and Haacke figure of merit (FOM) are 5.95 × 10-2 )-1 under Mo layer thickness of 15 nm. These results indicate an alternative candidate for use as a transparent electrode in solar cells and various displays applications.

Keywords: Aluminum-doped zinc oxide, AZO, multilayer, RF magnetron sputtering, AZO/Mo/AZO, thin film, transparent conductive oxides.

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Authors: M. Lamri Zeggar, F. Bourfaa, A. Adjimi, F. Boutbakh, M. S. Aida, N. Attaf

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CuO thin films were deposited by spray ultrasonic pyrolysis with different precursor solution. Two staring solution slats were used namely: copper acetate and copper chloride. The influence of these solutions on CuO thin films proprieties of is instigated. The X rays diffraction (XDR) analysis indicated that the films deposed with copper acetate are amorphous however the films elaborated with copper chloride have monoclinic structure. UV- Visible transmission spectra showed a strong absorbance of the deposited CuO thin films in the visible region. Electrical characterization has shown that CuO thin films prepared with copper acetate have a higher electrical conductivity.

Keywords: Thin films, cuprous oxide, spray pyrolysis, precursor solution.

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Authors: Ivan Balázs, Jindřich Melcher

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Metal thin-walled members have been widely used in building industry. Usually they are utilized as purlins, girts or ceiling beams. Due to slenderness of thin-walled cross-sections these structural members are prone to stability problems (e.g. flexural buckling, lateral torsional buckling). If buckling is not constructionally prevented their resistance is limited by buckling strength. In practice planar members of roof or wall cladding can be attached to thin-walled members. These elements reduce displacement of thin-walled members and therefore increase their buckling strength. If this effect is taken into static assessment more economical sections of thin-walled members might be utilized and certain savings of material might be achieved. This paper focuses on problem of determination of critical load of steel thin-walled beams with lateral continuous restraint which is crucial for lateral torsional buckling assessment.

Keywords: Beam, buckling, numerical analysis, stability, steel.

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Authors: Ingy A. El-Khouly, Khaled S. El-Kilany, Aziz E. El-Sayed

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The process of wafer fabrication is arguably the most technologically complex and capital intensive stage in semiconductor manufacturing. This large-scale discrete-event process is highly reentrant, and involves hundreds of machines, restrictions, and processing steps. Therefore, production control of wafer fabrication facilities (fab), specifically scheduling, is one of the most challenging problems that this industry faces. Dispatching rules have been extensively applied to the scheduling problems in semiconductor manufacturing. Moreover, lot release policies are commonly used in this manufacturing setting to further improve the performance of such systems and reduce its inherent variability. In this work, simulation is used in the scheduling of re-entrant flow shop manufacturing systems with an application in semiconductor wafer fabrication; where, a simulation model has been developed for the Intel Five-Machine Six Step Mini-Fab using the ExtendTM simulation environment. The Mini-Fab has been selected as it captures the challenges involved in scheduling the highly re-entrant semiconductor manufacturing lines. A number of scenarios have been developed and have been used to evaluate the effect of different dispatching rules and lot release policies on the selected performance measures. Results of simulation showed that the performance of the Mini-Fab can be drastically improved using a combination of dispatching rules and lot release policy.

Keywords: Dispatching rules, lot release policy, re-entrant flowshop, semiconductor manufacturing.

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Authors: T. Brettschneider, C. Dorrer, H. Suy, T. Braun, E. Jung, R. Hoofman, M. Bründel, R. Zengerle, F. Lärmer

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We present an integration approach of a CMOS biosensor into a polymer based microfluidic environment suitable for mass production. It consists of a wafer-level-package for the silicon die and laser bonding process promoted by an intermediate hot melt foil to attach the sensor package to the microfluidic chip, without the need for dispensing of glues or underfiller. A very good condition of the sensing area was obtained after introducing a protection layer during packaging. A microfluidic flow cell was fabricated and shown to withstand pressures up to Δp = 780 kPa without leakage. The employed biosensors were electrically characterized in a dry environment.

Keywords: CMOS biosensor, laser bonding, silicon polymer integration, wafer level packaging.

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Authors: S. Kowsari, M. Aghaziarati

Abstract:

Pyrite (FeS2) is a promising candidate for cathode materials in batteries because of it`s high theoretical capacity, low cost and non-toxicity. In this study, nano size iron disulfide thin film was prepared on graphite substrate through a new method as battery cathode. In this way, acetylene black and poly vinylidene fluoride were used as electron conductor and binder, respectively. Fabricated thin films were analyzed by XRD and SEM. These results and electrochemical data confirm improvement of battery discharge capacity in comparison with commercial type of pyrite.

Keywords: Nano pyrite, Thin film, Battery cathode, capacity.

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Authors: M.T. Shervani-Tabar, M. Rezaee, E. Madadi Kandjani

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Dynamics of a vapour bubble generated due to a high local energy input near a circular thin bronze plate in the absence of the buoyancy forces is numerically investigated in this paper. The bubble is generated near a thin bronze plate and during the growth and collapse of the bubble, it deforms the nearby plate. The Boundary Integral Equation Method is employed for numerical simulation of the problem. The fluid is assumed to be incompressible, irrotational and inviscid and the surface tension on the bubble boundary is neglected. Therefore the fluid flow around the vapour bubble can be assumed as a potential flow. Furthermore, the thin bronze plate is assumed to have perfectly plastic behaviour. Results show that the displacement of the circular thin bronze plate has considerable effect on the dynamics of its nearby vapour bubble. It is found that by decreasing the thickness of the thin bronze plate, the growth and collapse rate of the bubble becomes higher and consequently the lifetime of the bubble becomes shorter.

Keywords: Vapour Bubble, Thin Bronze Plate, Boundary Integral Equation Method.

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Authors: P. Sophon, M. Kruachanta, S. Chaisri, G. Leaungvongpaisan, P. Wongpornchai

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The thick bed hydrocarbon reservoirs are primarily interested because of the more prolific production. When the amount of petroleum in the thick bed starts decreasing, the thin bed reservoirs are the alternative targets to maintain the reserves. The conventional interpretation of seismic data cannot delineate the thin bed having thickness less than the vertical seismic resolution. Therefore, spectral decomposition and instantaneous seismic attributes were used to delineate the thin bed in this study. Short Window Discrete Fourier Transform (SWDFT) spectral decomposition and instantaneous frequency attributes were used to reveal the thin bed reservoir, while Continuous Wavelet Transform (CWT) spectral decomposition and envelope (instantaneous amplitude) attributes were used to indicate hydrocarbon bearing zone. The study area is located in the Pohokura Field, Taranaki Basin, New Zealand. The thin bed target is the uppermost part of Mangahewa Formation, the most productive in the gas-condensate production in the Pohokura Field. According to the time-frequency analysis, SWDFT spectral decomposition can reveal the thin bed using a 72 Hz SWDFT isofrequency section and map, and that is confirmed by the instantaneous frequency attribute. The envelope attribute showing the high anomaly indicates the hydrocarbon accumulation area at the thin bed target. Moreover, the CWT spectral decomposition shows the low-frequency shadow zone and abnormal seismic attenuation in the higher isofrequencies below the thin bed confirms that the thin bed can be a prospective hydrocarbon zone.

Keywords: Hydrocarbon indication, instantaneous seismic attribute, spectral decomposition, thin bed delineation.

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Authors: Sheng-Shu Cheng, Fong-Jung Yu

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C-control chart assumes that process nonconformities follow a Poisson distribution. In actuality, however, this Poisson distribution does not always occur. A process control for semiconductor based on a Poisson distribution always underestimates the true average amount of nonconformities and the process variance. Quality is described more accurately if a compound Poisson process is used for process control at this time. A cumulative sum (CUSUM) control chart is much better than a C control chart when a small shift will be detected. This study calculates one-sided CUSUM ARLs using a Markov chain approach to construct a CUSUM control chart with an underlying Poisson-Gamma compound distribution for the failure mechanism. Moreover, an actual data set from a wafer plant is used to demonstrate the operation of the proposed model. The results show that a CUSUM control chart realizes significantly better performance than EWMA.

Keywords: Nonconformities, Compound Poisson distribution, CUSUM control chart.

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Authors: M. Babaeipour, M. Vejdanihemmat

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Optical properties of bulk and thin film of 1H-CaAlSi for two directions (1,0,0) and (0,0,1) were studied. The calculations are carried out by Density Functional Theory (DFT) method using full potential. GGA approximation was used to calculate exchange-correlation energy. The calculations are performed by WIEN2k package. The results showed that the absorption edge is shifted backward 0.82eV in the thin film than the bulk for both directions. The static values of the real part of dielectric function for four cases were obtained. The static values of the refractive index for four cases are calculated too. The reflectivity graphs have shown an intensive difference between the reflectivity of the thin film and the bulk in the ultraviolet region.

Keywords: 1H-CaAlSi, absorption, bulk, optical, thin film.

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Authors: Ali A. Ofoghi

Abstract:

While the shear walls are not economical in buildings, thin shear walls are widely used in the buildings. In the present study, the ratio of different loads to their plasticity and seismic behavior of the wall under different loads have been investigated. Modeling and analysis are carried out by the finite element analysis software ABAQUS. The results show that any increase in the exerted loads will have adverse effects on the seismic behavior of the thin shear walls and causes the wall to collapse by small displacements.

Keywords: Thin shear wall, nonlinear dynamic analysis, reinforced concrete, plasticity.

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Authors: Won Song, Bo-Ra Koo, Seok Eui Choi, Yong-Taeg Oh, Dong-Chan Shin

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Optical properties of sputter-deposited ZnS thin films were investigated as potential replacements for CBD(chemical bath deposition) CdS buffer layers in the application of CIGS solar cells. ZnS thin films were fabricated on glass substrates at RT, 150oC, 200oC, and 250oC with 50 sccm Ar gas using an RF magnetron sputtering system. The crystal structure of the thin film is found to be zinc blende (cubic) structure. Lattice parameter of ZnS is slightly larger than CdS on the plane and thus better matched with that of CIGS. Within a 400-800 nm wavelength region, the average transmittance was larger than 75%. When the deposition temperature of the thin film was increased, the blue shift phenomenon was enhanced. Band gap energy of the ZnS thin film tended to increase as the deposition temperature increased. ZnS thin film is a promising material system for the CIGS buffer layer, in terms of ease of processing, low cost, environmental friendliness, higher transparency, and electrical properties

Keywords: ZnS thin film, Buffer layer, CIGS, Solar cell.

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Authors: Ivan Balázs, Jindřich Melcher

Abstract:

Steel thin-walled beams have been widely used in civil engineering as purlins, ceiling beams or wall substructure beams. There are often planar members such as trapezoidal sheeting or sandwich panels used as roof or wall cladding fastened to the steel beams. The planar members also serve as stabilization of thin-walled beams against buckling due to loss of stability. This paper focuses on problem of stabilization of steel monosymmetric thin-walled beams by trapezoidal sheeting. Some factors having influence on overall behavior of this structural system are investigated using numerical analysis. Thin-walled beams in bending stabilized by trapezoidal sheeting are of primarily interest of this study.

Keywords: Beam, buckling, numerical analysis, stability, steel structures, trapezoidal sheeting.

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Authors: A.V. Hoseini, A. Bidi, M. H. Pol, M.Jalali azizpour

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In this paper stress and strain for two rotating thin wall cylinder fitted together with initial interference and overlap are computed. Also stress value for variation of initial interference is calculated. At first problem is considered without rotation and next angular velocity increased from 0 to 50000 rev/min and stress in each stage is calculated. The important point is that when stress become very small in magnitude the angular velocity is critical and two cylinders will separate. The critical speed i.e. speed of separation is calculated in each step.

Keywords: Thin walled cylinder, high angular velocity, twofitted thin walled

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Authors: Adekanmi M. Adeyinka, Onyedika V. Mbelu, Yaqub B. Adediji, Daniel I. Yahya

Abstract:

Growing energy demand and the world's dependence on fossil fuel-based energy systems causing greenhouse gas emissions and climate change have intensified the need for utilizing renewable energy sources. Solar energy can be converted directly into electricity via photovoltaic solar cells. Thin-film solar cells are preferred due to their cost effectiveness, less material consumption, flexibility, and rising trend in efficiency. In this paper, Gallium arsenide (GaAs), Amorphous silicon (a-Si), Copper Indium Gallium Selenide (CIGS), and Cadmium Telluride (CdTe) thin film solar cells are reviewed. The evolution, structures, fabrication methods, stability and degradation methods, and trend in the efficiency of the thin-film solar cells over the years are discussed in detail. Also, a comparison of the thin-film solar cells reviewed with crystalline silicon in terms of physical properties and performance is made.

Keywords: Climate change, conversion efficiency, solar energy, thin-film solar cell.

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Authors: K. Kalaiselvan, A. Elango, N.M. Nagarajan

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Laser beam welding is an important joining technique for Titanium/Aluminum thin sheet alloys with their increasing applications in aerospace, aircraft, automotive, electronics and other industries. In this paper the research and progress in laser welding of Ti/Al thin sheets are critically reviewed from different perspectives. Some important aspects such as microstructure, metallurgical defects and mechanical properties in weldments are discussed. Also the recent progress in laser welding of Ti/Al dissimilar thin sheets to provide a basis for further research work is reported.

Keywords: Laser welding, Titanium/Aluminium sheets, microstructure, metallurgical defects and mechanical properties.

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Authors: Jae-Hong Kwon, Myung-Ho Chung, Tae-Yeon Oh, Hyeon-Seok Bae, Byeong-Kwon Ju

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End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers,DZ-dihexylquarterthiophene (DH-4T) and DZ-dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtained a stable characteristic curve. The field effect mobility, Pwas calculated to be 3.2910-4 cm2/Vs for DH-6T based OTFT; while the DH-4T based OTFT had 1.8810-5 cm2/Vs.KeywordsOrganic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.

Keywords: Organic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.

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Authors: O. Shiman, V. Gerbreders, E. Sledevskis, A. Bulanovs, V.Pashkevich

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The selective wet-etching of amorphous and crystalline region of Sb20Se80 thin films was carried out using organic based solution e.g. amines. We report the development of an in situ real-time method to study the wet chemical etching process of thin films. Characterization of the structure and surface of films studied by X-ray diffraction, SEM and EBSD methods has been done and potential application suggested.

Keywords: amorphous and crystalline phases, chalcogenide thinfilm, etching process

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Authors: N. H. Arabi, Aicha Iratni, Talaighil Razika, Bruno Capoen, Mohamed Bouazaoui

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TiO2 thin films have been prepared by the sol-gel dipcoating technique in order to elaborate antireflective thin films for monocrystalline silicon (mono-Si). The titanium isopropoxyde was chosen as a precursor with hydrochloric acid as a catalyser for preparing a stable solution. The optical properties have been tailored with varying the solution concentration, the withdrawn speed, and the heat-treatment. We showed that using a TiO2 single layer with 64.5 nm in thickness, heat-treated at 450°C or 300°C reduces the mono-Si reflection at a level lower than 3% over the broadband spectral domains [669-834] nm and [786-1006] nm respectively. Those latter performances are similar to the ones obtained with double layers of low and high refractive index glasses respectively.

Keywords: Dip coating, mono-Si, titanium oxide, thin film.

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Authors: Yu-Hsin Chen, Yuan-Tai Hsieh, Cheng-Shong Hong, Chia-Ching Wu, Cheng-Fu Yang, Yu-Jhen Liou

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In this study, we investigated (In,Ga,Zn)O_x (IGZO) thin films and examined their characteristics of using Ga₂O₃-2 ZnO (GZO) co-sputtered In₂O₃ prepared by dual target radio frequency magnetron sputtering at room temperature in a pure Ar atmosphere. RF powers of 80 W and 70 W were used for GZO and pure In₂O₃, room temperature (RT) was used as deposition temperature, and the deposition time was changed from 15 min to 60 min. Structural, surface, electrical, and optical properties of IGZO thin films were investigated as a function of deposition time. Furthermore, the GZO co-sputtered In₂O₃ thin films showed a very smooth and featureless surface and an amorphous structure regardless of the deposition time due to the room temperature sputtering process. We would show that the co-sputtered IGZO thin films exhibited transparent electrode properties with high transmittance ratio and low resistivity.

Keywords: IGZO, co-sputter, Ga2O3-2 ZnO, In2O3.

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Authors: M. Kamal M. Shah, Noorhifiantylaily Ahmad, O. Irma Wani, J. Sahari

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This paper presents the computationally mechanics analysis of energy absorption for cylindrical and square thin wall tubed structure by using ABAQUS/explicit. The crashworthiness behavior of AISI 1020 mild steel thin-walled tube under axial loading has been studied. The influence effects of different model’s cross-section, as well as model length on the crashworthiness behavior of thin-walled tube, are investigated. The model was placed on loading platform under axial loading with impact velocity of 5 m/s to obtain the deformation results of each model under quasi-static loading. The results showed that model undergoes different deformation mode exhibits different energy absorption performance.

Keywords: Axial loading, energy absorption performance, computational mechanics, crashworthiness behavior, deformation mode, thin-walled tubes.

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Authors: Mohammad Reza Tabatabaei, Ali Vaseghi Ardekani

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In this paper, Zinc Oxide (ZnO) thin films are deposited on glass substrate by sol-gel method. The ZnO thin films with well defined orientation were acquired by spin coating of zinc acetate dehydrate monoethanolamine (MEA), de-ionized water and isopropanol alcohol. These films were pre-heated at 275°C for 10 min and then annealed at 350°C, 450°C and 550°C for 80 min. The effect of annealing temperature and different thickness on structure and surface morphology of the thin films were verified by Atomic Force Microscopy (AFM). It was found that there was a significant effect of annealing temperature on the structural parameters of the films such as roughness exponent, fractal dimension and interface width. Thin films also were characterizied by X-ray Diffractometery (XRD) method. XRD analysis revealed that the annealed ZnO thin films consist of single phase ZnO with wurtzite structure and show the c-axis grain orientation. Increasing annealing temperature increased the crystallite size and the c-axis orientation of the film after 450°C. Also In this study, ZnO thin films in different thickness have been prepared by sol-gel method on the glass substrate at room temperature. The thicknesses of films are 100, 150 and 250 nm. Using fractal analysis, morphological characteristics of surface films thickness in amorphous state were investigated. The results show that with increasing thickness, surface roughness (RMS) and lateral correlation length (ξ) are decreased. Also, the roughness exponent (α) and growth exponent (β) were determined to be 0.74±0.02 and 0.11±0.02, respectively.

Keywords: ZnO, Thin film, Fractal analysis, Morphology, AFM, annealing temperature, different thickness, XRD.

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Authors: Vipin Kumar Jain, Praveen Kumar, Y.K. Vijay

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ZnO-SnO2 i.e. Zinc-Tin-Oxide (ZTO) thin films were deposited on glass substrate with varying concentrations (ZnO:SnO2 - 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash evaporation technique. These deposited ZTO film were annealed at 450 0C in vacuum. These films were characterized to study the effect of annealing on the structural, electrical, and optical properties. Atomic force microscopy (AFM) and Scanning electron microscopy (SEM) images manifest the surface morphology of these ZTO thin films. The apparent growth of surface features revealed the formation of nanostructure ZTO thin films. The small value of surface roughness (root mean square RRMS) ensures the usefulness in optical coatings. The sheet resistance was also found to be decreased for both types of films with increasing concentration of SnO2. The optical transmittance found to be decreased however blue shift has been observed after annealing.

Keywords: ZTO thin film, AFM, SEM, Optical transmittance, Sheet resistance.

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