Search results for: Superconducting Fault Current Limiter

Authors: S.Aksoy, Y.Caglar

Abstract:

n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated. The X-ray diffraction (XRD) spectra indicated that the film was of polycrystalline nature. The scanning electron microscopy (SEM) images indicate that the surface morphology CdO film consists of the clusters formed with the coming together of the nanoparticles. The electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode was investigated by current-voltage. The ideality factor of the diode was found to be 3.02 for room temperature. The reverse current of the diode strongly increased with illumination intensity of 100 mWcm-2 and the diode gave a maximum open circuit voltage Voc of 0.04 V and short-circuits current Isc of 9.92×10-9 A.

Keywords: CdO, heterojunction semiconductor devices, ideality factor, current-voltage characteristics

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Authors: Chun-Ying Lee, Kuan-Hui Cheng, Mei-Wen Wu

Abstract:

The nickel-manganese (Ni-Mn) alloy coating prepared from DC electrodeposition process in sulphamate bath was studied. The effects of process parameters, such as current density and electrolyte composition, on the cathodic current efficiency, microstructure, internal stress and mechanical properties were investigated. Because of its crucial effect on the application to the electroforming of microelectronic components, the development of low internal stress coating with high leveling power was emphasized. It was found that both the coating’s manganese content and the cathodic current efficiency increased with the raise in current density. In addition, the internal stress of the deposited coating showed compressive nature at low current densities while changed to tensile one at higher current densities. Moreover, the metallographic observation, X-ray diffraction measurement, and polarization curve measurement were conducted. It was found that the Ni-Mn coating consisted of nano-sized columnar grains and the maximum hardness of the coating was associated with (111) preferred orientation in the microstructure. The grain size was refined along with the increase in the manganese content of the coating, which accordingly, raised its hardness and resistance to annealing softening. In summary, the Ni-Mn coating prepared at lower current density of 1-2 A/dm2 had low internal stress, high leveling power, and better corrosion resistance.

Keywords: DC plating, internal stress, leveling power, Ni-Mn coating.

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Authors: Risdiana, D. Suhendar, S. Pratiwi, W. A. Somantri, T. Saragi

Abstract:

The effect of partially substitution of magnetic impurity Fe for Cu to the magnetic and transport properties in electron-doped superconducting cuprates of Eu1.85+yCe0.15-yCu1-yFeyO4+α-δ (ECCFO) with y = 0, 0.010, 0.020, and 0.050 has been studied, in order to investigate the mechanism of magnetic and transport properties of ECCFO in normal-state. Magnetic properties are investigated by DC magnetic-susceptibility measurements that carried out at low temperatures down to 2 K using a standard SQUID magnetometer in a magnetic field of 5 Oe on field cooling. Transport properties addressed to electron mobility, are extracted from radius of electron localization calculated from temperature dependence of resistivity. For y = 0, temperature dependence of dc magnetic-susceptibility (χ) indicated the change of magnetic behavior from paramagnetic to diamagnetic below 15 K. Above 15 K, all samples show paramagnetic behavior with the values of magnetic moment in every volume unit increased with increasing y. Electron mobility decreased with increasing y.

Keywords: DC magnetic-susceptibility, electron mobility, Eu1.85+yCe0.15-yCu1-yFeyO4+α-δ, normal state.

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Authors: E. Farshidi, N. Ahmadpoor

Abstract:

In this paper, a alternative structure method for continuous time sigma delta modulator is presented. In this modulator for implementation of integrators in loop filter second generation current conveyors are employed. The modulator is designed in CMOS technology and features low power consumption (<2.8mW), low supply voltage (±1.65), wide dynamic range (>65db), and with 180khZ bandwidth. Simulation results confirm that this design is suitable for data converters.

Keywords: Current Conveyor, continuous, sigma delta, MOS, modulator

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Authors: Hoang Van Ngoc, Nguyen Thu Huong, Nguyen Quang Bau

Abstract:

Using the quantum kinetic equation for electrons interacting with acoustic phonon, the density of the constant current associated with the drag of charge carriers in cylindrical quantum wire by a linearly polarized electromagnetic wave, a DC electric field and a laser radiation field is calculated. The density of the constant current is studied as a function of the frequency of electromagnetic wave, as well as the frequency of laser field and the basic elements of quantum wire with a parabolic potential. The analytic expression of the constant current density is numerically evaluated and plotted for a specific quantum wires GaAs/AlGaAs to show the dependence of the constant current density on above parameters. All these results of quantum wire compared with bulk semiconductors and superlattices to show the difference.

Keywords: Photon-drag effect, constant current density, quantum wire, parabolic potential.

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Authors: Mojtaba Ghodsi, Hamidreza Ziaifar, Morteza Mohammadzaheri, Payam Soltani

Abstract:

In this paper, the performance of a medium power (25 kW/25 kHz) hybrid inverter with a reactive transformer is investigated. To analyze the sensitivity of the inverster, the RSM technique is employed to manifest the effective factors in the inverter to minimize current passing through the Insulated Bipolar Gate Transistors (IGBTs) (current stress). It is revealed that the ratio of the axillary inductor to the effective inductance of resonant inverter (N), is the most effective parameter to minimize the current stress in this type of inverter. In practice, proper selection of N mitigates the current stress over IGBTs by five times. This reduction is very helpful to keep the IGBTs at normal temperatures.

Keywords: Analytical analysis, hybrid resonant inverter, reactive transformer, response surface method.

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Authors: K. Vinoth Kumar, M.P. Selvan

Abstract:

This paper presents a simple approach for load flow analysis of a radial distribution network. The proposed approach utilizes forward and backward sweep algorithm based on Kirchoff-s current law (KCL) and Kirchoff-s voltage law (KVL) for evaluating the node voltages iteratively. In this approach, computation of branch current depends only on the current injected at the neighbouring node and the current in the adjacent branch. This approach starts from the end nodes of sub lateral line, lateral line and main line and moves towards the root node during branch current computation. The node voltage evaluation begins from the root node and moves towards the nodes located at the far end of the main, lateral and sub lateral lines. The proposed approach has been tested using four radial distribution systems of different size and configuration and found to be computationally efficient.

Keywords: constant current load, constant impedance load, constant power load, forward–backward sweep, load flow analysis, radial distribution system.

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Authors: Eduardo P. Wiechmann, Jorge A. Henríquez, Pablo E. Aqueveque, Luis G. Muñoz

Abstract:

PV energy prices are declining rapidly. To take advantage of the benefits of those prices and lower the carbon footprint, operational practices must be modified. Undoubtedly, it challenges the electrowinning practice to operate at constant current throughout the day. This work presents a technology that contributes in providing modulation capacity to the electrode current distribution system. This is to raise the day time dc current and lower it at night. The system is a triple intercell bar that operates in current-source mode. The design is a capping board free dogbone type of bar that ensures an operation free of short circuits, hot swapability repairs and improved current balance. This current-source system eliminates the resetting currents circulating in equipotential bars. Twin auxiliary connectors are added to the main connectors providing secure current paths to bypass faulty or impaired contacts. All system conductive elements are positioned over a baseboard offering a large heat sink area to the ventilation of a facility. The system works with lower temperature than a conventional busbar. Of these attributes, the cathode current balance property stands out and is paramount for day/night modulation and the use of photovoltaic energy. A design based on a 3D finite element method model predicting electric and thermal performance under various industrial scenarios is presented. Preliminary results obtained in an electrowinning facility with industrial prototypes are included.

Keywords: Electrowinning, intercell bars, PV energy, current modulation.

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Authors: Naim Suleyman Ting, Yakup Sahin, Ismail Aksoy

Abstract:

This paper presents a zero voltage transition-zero current transition (ZVT-ZCT)-PWM DC-DC boost converter with direct power transfer. In this converter, the main switch turns on with ZVT and turns off with ZCT. The auxiliary switch turns on and off with zero current switching (ZCS). The main diode turns on with ZVS and turns off with ZCS. Besides, the additional current or voltage stress does not occur on the main device. The converter has features as simple structure, fast dynamic response and easy control. Also, the proposed converter has direct power transfer feature as well as excellent soft switching techniques. In this study, the operating principle of the converter is presented and its operation is verified for 1 kW and 100 kHz model.

Keywords: Direct power transfer, boost converter, zero-voltage transition, zero-current transition.

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Authors: N. Karunakaran, V. Balasubramanian

Abstract:

This paper presents the results of a study aimed at establishing the temperature distribution during the welding of aluminum alloy plates by Pulsed Current Gas Tungsten Arc Welding (PCGTAW) and Constant Current Gas Tungsten Arc Welding (CCGTAW) processes. Pulsing of the GTA welding current influences the dimensions and solidification rate of the fused zone, it also reduces the weld pool volume hence a narrower bead. In this investigation, the base material considered was aluminum alloy AA 6351 T6, which is finding use in aircraft, automobile and high-speed train components. A finite element analysis was carried out using ANSYS, and the results of the FEA were compared with the experimental results. It is evident from the study that the finite element analysis using ANSYS can be effectively used to model PCGTAW process for finding temperature distribution.

Keywords: Gas tungsten arc welding, pulsed current, finite element analysis, thermal analysis, aluminum alloy.

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Authors: Reza Sedaghati, Mojtaba Hakimzadeh, Mohammad Hasan Raouf, Mostafa Mirzadeh

Abstract:

Nowadays the growth of distributed generation within the bulk power system is feasible by using the optimal control of the transmission lines power flow. Static Synchronous Compensators (STATCOM) is effective for improving voltage stability but it can only exchange reactive power with the power grid. The integration of Superconducting Magnetic Energy Storage (SMES) with a STATCOM can extend the traditional STATCOM capabilities to four-quadrant bulk power system power flow control and providing exchange both the active and reactive power related to the STATCOM with the ac network. This paper shows how the SMES system can be connected to the ac system via the DC bus of a STATCOM and also analyzes how the integration of STATCOM and SMES allows the bus voltage regulation and power oscillation damping (POD) to be achieved simultaneously. The dynamic performance of the integrated STATCOM-SMES is evaluated through simulation by using PSCAD/EMTDC software and the compensation effectiveness of this integrated compensator is shown.

Keywords: STATCOM-SMES compensator, Power Oscillation Damping (POD), stabilizing, signal, voltage.

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Authors: E. Ramprasath, P. Manojkumar, P. Veena

Abstract:

DC motors have been widely used in the past centuries which are proudly known as the workhorse of industrial systems until the invention of the AC induction motors which makes a huge revolution in industries. Since then, the use of DC machines has been decreased due to enormous factors such as reliability, robustness and complexity but it lost its fame due to the losses. In this paper a new methodology is proposed to construct a DC motor through the simulation in LabVIEW to get an idea about its real time performances, if a change in parameter might have bigger improvement in losses and reliability.

Keywords: Direct Current motor, LabVIEW software, modelling and analysis, overall characteristics of Direct Current motor.

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Authors: A. Fakhfakh, N. Ksentini, M. Loulou, N. Masmoudi, J. J. Charlot

Abstract:

Today, design requirements are extending more and more from electronic (analogue and digital) to multidiscipline design. These current needs imply implementation of methodologies to make the CAD product reliable in order to improve time to market, study costs, reusability and reliability of the design process. This paper proposes a high level design approach applied for the characterization and the optimization of Switched-Current Sigma- Delta Modulators. It uses the new hardware description language VHDL-AMS to help the designers to optimize the characteristics of the modulator at a high level with a considerably reduced CPU time before passing to a transistor level characterization.

Keywords: high level design, optimization, switched-Current Sigma-Delta Modulators, VHDL-AMS.

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Authors: Md. Noman Habib Khan, S. Khan, T. S. Gunawan, R. I. Boby

Abstract:

The photovoltaic (PV) panel with no galvanic isolation system is well known technique in the world which is effective and delivers power with enhanced efficiency. The PV generation presented here is for stand-alone system installed in remote areas when as the resulting power gets connected to electronic load installation instead of being tied to the grid. Though very small, even then transformer-less topology is shown to be with leakage in pico-ampere range. By using PWM technique PWM, leakage current in different situations is shown. The results shown in this paper show how the pico-ampere current is reduced to femto-ampere through use of inductors and capacitors of suitable values of inductor and capacitors with the load.

Keywords: Photovoltaic (PV) panel, Duty cycle, Pulse Duration Modulation (PDM), Leakage current.

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Authors: E. Moroydor Derun, A. S. Kipcak, A. Kaplan, S. Piskin

Abstract:

Magnesium wastes are produced by many industrial activities. This waste problem is becoming a future problem for the world. Magnesium borates have many advantages such as; high corrosion resistance, heat resistance, high coefficient of elasticity and can also be used in the production of material against radiation. Addition, magnesium borates have great potential in sectors including ceramic and detergents industry and superconducting materials. In this study, using the starting materials of waste magnesium and H3BO3 the hydrothermal method was applied at a moderate temperature of 70oC. Several mole ratios of waste magnesium to H3BO3 are selected as; 1:2, 1:4, 1:6, 1:8, 1:10. Reaction time was determined as 1 hour. After the synthesis, X-Ray Diffraction (XRD) and Fourier Transform Infrared Spectroscopy (FT-IR) techniques are applied to products. As a result the forms of mcallisterite “Mg2(B6O7(OH)6)2.9(H2O)”, admontite “MgO(B2O3)3.7(H2O)” and magnesium boron hydrate (MgO(B2O3)3.6(H2O)” are obtained. 

Keywords: Hydrothermal synthesis, magnesium borates, waste magnesium.

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Authors: Meysam Jamali, Ebrahim Moghimi, Zean Alabden Jafarpour

Abstract:

Karst term is the determiner of a variety of areas or landforms and unique perspectives that have been formed in result of the of the ingredients dissolution of rocks constituter by natural waters. Shiraz area with an area of 5322km2 is located in the simple folded belt in the southern part of Zagros Mountain of Fars, and is surrounded with Limestone Mountains (Asmari formation). Shiraz area is located in Calcareous areas. The infrastructure of this city is lime and absorbing wells that the city can influence the Limestone dissolution and those accelerate its rate and increase the cavitation below the surface. Dasht-e Arjan is a graben, which has been created as the result of activity of two normal faults in its east and west sides. It is a complete sample of Karst plains (Polje) which has been created with the help of tectonic forces (fault) and dissolution process of water in Asmari limestone formation. It is located 60km. off south west of Shiraz (on Kazeroon-Shiraz road). In 1971, UNESCO has recognized this plain as a reserve of biosphere. It is considered as one of the world’s most beautiful geological phenomena, so that most of the world’s geologists are interested in visiting this place. The purpose of this paper is to identify and introduce landscapes of Karst features shiraz city and Dasht-e Arjan including Karst dissolution features (Lapiez, Karst springs, dolines, caves, underground caves, ponors, and Karst valleys), anticlines and synclines, and Arjan Lake.

Keywords: Dasht-eArjan, Fault, Karst features, Shiraz City, Zagros.

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Authors: Zina Saheb, Ezz El-Masry

Abstract:

As the Silicon oxide scaled down in MOSFET technology to few nanometers, gate Direct Tunneling (DT) in Floating gate (FGMOSFET) devices has become a major concern for analog designers. FGMOSFET has been used in many low-voltage and low-power applications, however, there is no accurate model that account for DT gate leakage in nano-scale. This paper studied and analyzed different simulation models for FGMOSFET using TSMC 90-nm technology. The simulation results for FGMOSFET cascade current mirror shows the impact of DT on circuit performance in terms of current and voltage without the need for fabrication. This works shows the significance of using an accurate model for FGMOSFET in nan-scale technologies.

Keywords: CMOS transistor, direct-tunneling current, floatinggate, gate-leakage current, simulation model.

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Authors: Tom Dowling, Adam Duffy

Abstract:

This paper presents an architecture to assist in the development of tools to perform experimental analysis. Existing implementations of tools based on this architecture are also described in this paper. These tools are applied to the real world problem of fault attack emulation and detection in cryptographic algorithms.

Keywords: Software Architectures and Design, Software Componentsand Reuse, Engineering Secure Software.

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Authors: T. Thosdeekoraphat, S. Summart, C. Saetiaw, S. Santalunai, C. Thongsopa

Abstract:

This article presents a current-mode universal biquadratic filter. The proposed circuit can apparently provide standard functions of the biquad filter: low-pass, high-pass, bandpass, band-reject and all-pass functions. The circuit uses 4 current controlled transconductance amplifiers (CCTAs) and 2 grounded capacitors. In addition, the pole frequency and quality factor can be adjusted by electronic method by adjusting the bias currents of the CCTA. The proposed circuit uses only grounded capacitors without additional external resistors, the proposed circuit is considerably appropriate to further developing into an integrated circuit. The results of PSPICE simulation program are corresponding to the theoretical analysis.

Keywords: Resistor-less, Current-mode, Biquad filter, CCTA.

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Authors: Farhana Mohamad Yusop, Syafrudin Masri, Dahaman Ishak, Mohamad Kamarol

Abstract:

Electromagnetic forces on three-phase five-wire (3P5W) busbar system is investigated under three-phase short-circuits current. The conductor busbar placed in compact galvanized steel enclosure is in the rectangular shape. Transient analysis from Opera-2D is carried out to develop the model of three-phase short-circuits current in the system. The result of the simulation is compared with the calculation result, which is obtained by applying the theories of Biot Savart’s law and Laplace equation. Under this analytical approach, the moment of peak short-circuit current is taken into account. The effect upon geometrical arrangement of the conductor and the present of the steel enclosure are considered by the theory of image. The result depict that the electromagnetic force due to the transient short-circuit from simulation is agreed with the calculation.

Keywords: Busbar, electromagnetic force, short-circuit current, transient analysis.

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Authors: N.Karunakaran, V.Balasubramanian

Abstract:

This paper presents the results of a study aimed at establishing the temperature distribution during the welding of magnesium alloy sheets by Pulsed Current Gas Tungsten Arc Welding (PCGTAW) and Constant Current Gas Tungsten Arc Welding (CCGTAW) processes. Pulsing of the GTAW welding current influences the dimensions and solidification rate of the fused zone, it also reduces the weld pool volume hence a narrower bead. In this investigation, the base material considered was 2mm thin AZ 31 B magnesium alloy, which is finding use in aircraft, automobile and high-speed train components. A finite element analysis was carried out using ANSYS, and the results of the FEA were compared with the experimental results. It is evident from this study that the finite element analysis using ANSYS can be effectively used to model PCGTAW process for finding temperature distribution.

Keywords: gas tungsten arc welding, pulsed current, finiteelement analysis, thermal analysis, magnesium alloy.

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Authors: Zhenguo Vincent Chia, Sheung Yan Simon Ng, Minkyu Je

Abstract:

This paper presents CMOS Current Mode Logic (CML) circuits for a high speed Digital to Analog Converter (DAC) using standard CMOS 65nm process. The CML circuits have the propagation delay advantage over its conventional CMOS counterparts due to smaller output voltage swing and tunable bias current. The CML circuits proposed in this paper can achieve a maximum propagation delay of only 9.3ps, which can satisfy the stringent requirement for the 5 GHz high speed DAC application. Another advantage for CML circuits is its dynamic symmetry characteristic resulting in a reduction of an additional inverter. Simulation results show that the proposed CML circuits can operate from 1.08V to 1.3V with temperature ranging from -40 to +120°C.

Keywords: Conventional, Current Mode Logic, DAC, Decoder

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Authors: Luka Pavlič, Marjan Heričko

Abstract:

E-services have significantly changed the way of doing business in recent years. We can, however, observe poor use of these services. There is a large gap between supply and actual eservices usage. This is why we started a project to provide an environment that will encourage the use of e-services. We believe that only providing e-service does not automatically mean consumers would use them. This paper shows the origins of our project and its current position. We discuss the decision of using semantic web technologies and their potential to improve e-services usage. We also present current knowledge base and its real-world classification. In the paper, we discuss further work to be done in the project. Current state of the project is promising.

Keywords: E-Services, E-Services Repository, Ontologies, Semantic Web

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Authors: Bhed Bahadur Bista

Abstract:

Network layer multicast, i.e. IP multicast, even after many years of research, development and standardization, is not deployed in large scale due to both technical (e.g. upgrading of routers) and political (e.g. policy making and negotiation) issues. Researchers looked for alternatives and proposed application/overlay multicast where multicast functions are handled by end hosts, not network layer routers. Member hosts wishing to receive multicast data form a multicast delivery tree. The intermediate hosts in the tree act as routers also, i.e. they forward data to the lower hosts in the tree. Unlike IP multicast, where a router cannot leave the tree until all members below it leave, in overlay multicast any member can leave the tree at any time thus disjoining the tree and disrupting the data dissemination. All the disrupted hosts have to rejoin the tree. This characteristic of the overlay multicast causes multicast tree unstable, data loss and rejoin overhead. In this paper, we propose that each node sets its leaving time from the tree and sends join request to a number of nodes in the tree. The nodes in the tree will reject the request if their leaving time is earlier than the requesting node otherwise they will accept the request. The node can join at one of the accepting nodes. This makes the tree more stable as the nodes will join the tree according to their leaving time, earliest leaving time node being at the leaf of the tree. Some intermediate nodes may not follow their leaving time and leave earlier than their leaving time thus disrupting the tree. For this, we propose a proactive recovery mechanism so that disrupted nodes can rejoin the tree at predetermined nodes immediately. We have shown by simulation that there is less overhead when joining the multicast tree and the recovery time of the disrupted nodes is much less than the previous works. Keywords

Keywords: Network layer multicast, Fault Resilience, IP multicast

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Authors: Sikder Mohammad Faruk, Mir Mofajjal Hossain, Muhibul Haque Bhuyan

Abstract:

In this investigative research paper, we have presented the simulation results of a three-phase rectifier circuit to improve the input side current using the passive filters, such as capacitors and inductors at the output and input terminals of the rectifier circuit respectively. All simulation works were performed in a personal computer using the PSPICE simulator software, which is a virtual circuit design and simulation software package. The output voltages and currents were measured across a resistive load of 1 k. We observed that the output voltage levels, input current wave shapes, harmonic contents through the harmonic spectrum, and total harmonic distortion improved due to the use of such filters.

Keywords: input current wave, three-phase rectifier, passive filter, PSPICE Simulation

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Authors: Arash Azizi Mazreah, Mohammad Reza Sahebi, Mohammad T. Manzuri Shalmani

Abstract:

To help overcome limits to the density of conventional SRAMs and leakage current of SRAM cell in nanoscaled CMOS technology, we have developed a four-transistor SRAM cell. The newly developed CMOS four-transistor SRAM cell uses one word-line and one bit-line during read/write operation. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 19% smaller than a conventional six-transistor cell using same design rules. Also the leakage current of new cell is 60% smaller than a conventional sixtransistor SRAM cell. Simulation result in 65nm CMOS technology shows new cell has correct operation during read/write operation and idle mode.

Keywords: SRAM Cell, leakage current, cell area.

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Authors: Mohini Polimetla, Rajat Mahapatra

Abstract:

There is need to explore emerging technologies based on carbon nanotube electronics as the MOS technology is approaching its limits. As MOS devices scale to the nano ranges, increased short channel effects and process variations considerably effect device and circuit designs. As a promising new transistor, the Carbon Nanotube Field Effect Transistor(CNTFET) avoids most of the fundamental limitations of the Traditional MOSFET devices. In this paper we present the analysis and comparision of a Carbon Nanotube FET(CNTFET) based 10(A current mirror with MOSFET for 32nm technology node. The comparision shows the superiority of the former in terms of 97% increase in output resistance,24% decrease in power dissipation and 40% decrease in minimum voltage required for constant saturation current. Furthermore the effect on performance of current mirror due to change in chirality vector of CNT has also been investigated. The circuit simulations are carried out using HSPICE model.

Keywords: Carbon Nanotube Field Effect Transistor, Chirality Vector, Current Mirror

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Authors: Farid Moshgelani, Dhamin Al-Khalili, Côme Rozon

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In this paper, FinFET devices are analyzed with emphasis on sub-threshold leakage current control. This is achieved through proper biasing of the back gate, and through the use of asymmetric work functions for the four terminal FinFET devices. We are also examining different configurations of multiplexers and XOR gates using transistors of symmetric and asymmetric work functions. Based on extensive characterization data for MUX circuits, our proposed configuration using symmetric devices lead to leakage current and delay improvements of 65% and 47% respectively compared to results in the literature. For XOR gates, a 90% improvement in the average leakage current is achieved by using asymmetric devices. All simulations are based on a 25nm FinFET technology using the University of Florida UFDG model.

Keywords: FinFET, logic functions, asymmetric workfunction devices, back gate biasing, sub-threshold leakage current.

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Authors: Mehmet Sagbas, Kemal Fidanboylu, M. Can Bayram

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A new voltage-mode triple-input single-output multifunction filter using only two current conveyors is presented. The proposed filter which possesses three inputs and single-output can generate all biquadratic filtering functions at the output terminal by selecting different input signal combinations. The validity of the proposed filter is verified through PSPICE simulations.

Keywords: Active Filters, Voltage mode, Current conveyor

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Authors: S. Sadegzadeh, A. Mousavi

Abstract:

Temperature-dependent tunable photonic crystals have attracted widespread interest in recent years. In this research, transmission characteristics of a one-dimensional photonic crystal structure with a single defect have been studied. Here, we assume two different defect layers: InSb as a semiconducting layer and HgBa₂Ca₂Cu₃O₁₀ as a high-temperature superconducting layer. Both the defect layers have temperature-dependent refractive indexes. Two different types of dielectric materials (Si as a high-refractive index dielectric and MgF₂ as a low-refractive index dielectric) are used to construct the asymmetric structures (Si/MgF₂)^NInSb(Si/MgF₂)^N named S.I, and (Si/MgF₂)^NHgBa₂Ca₂Cu₃O₁₀(Si/MgF₂)^N named S.II. It is found that in response to the temperature changes, transmission peaks within the photonic band gap of the S.II structure, in contrast to S.I, show a small wavelength shift. Furthermore, the results show that under the same conditions, S.I structure generates an extra defect mode in the transmission spectra. Besides high efficiency transmission property of S.II structure, it can be concluded that the semiconductor-dielectric photonic crystals are more sensitive to temperature variation than superconductor types.

Keywords: Defect modes, photonic crystals, semiconductor, superconductor, transmission.

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