@article{(Open Science Index):https://publications.waset.org/pdf/6058,
	  title     = {Analysis of Current Mirror in 32nm MOSFET and CNTFET Technologies},
	  author    = {Mohini Polimetla and  Rajat Mahapatra},
	  country	= {},
	  institution	= {},
	  abstract     = {There is need to explore emerging technologies based on carbon nanotube electronics as the MOS technology is approaching its limits. As MOS devices scale to the nano ranges, increased short channel effects and process variations considerably effect device and circuit designs. As a promising new transistor, the Carbon Nanotube Field Effect Transistor(CNTFET) avoids most of the fundamental limitations of the Traditional MOSFET devices. In this paper we present the analysis and comparision of a Carbon Nanotube FET(CNTFET) based 10(A current mirror with MOSFET for 32nm technology node. The comparision shows the superiority of the former in terms of 97% increase in output resistance,24% decrease in power dissipation and 40% decrease in minimum voltage required for constant saturation current. Furthermore the effect on performance of current mirror due to change in chirality vector of CNT has also been investigated. The circuit simulations are carried out using HSPICE model.
},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {5},
	  number    = {12},
	  year      = {2011},
	  pages     = {1719 - 1722},
	  ee        = {https://publications.waset.org/pdf/6058},
	  url   	= {https://publications.waset.org/vol/60},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 60, 2011},
	}