Analysis of Current Mirror in 32nm MOSFET and CNTFET Technologies

Authors: Mohini Polimetla, Rajat Mahapatra

Abstract:

There is need to explore emerging technologies based on carbon nanotube electronics as the MOS technology is approaching its limits. As MOS devices scale to the nano ranges, increased short channel effects and process variations considerably effect device and circuit designs. As a promising new transistor, the Carbon Nanotube Field Effect Transistor(CNTFET) avoids most of the fundamental limitations of the Traditional MOSFET devices. In this paper we present the analysis and comparision of a Carbon Nanotube FET(CNTFET) based 10(A current mirror with MOSFET for 32nm technology node. The comparision shows the superiority of the former in terms of 97% increase in output resistance,24% decrease in power dissipation and 40% decrease in minimum voltage required for constant saturation current. Furthermore the effect on performance of current mirror due to change in chirality vector of CNT has also been investigated. The circuit simulations are carried out using HSPICE model.

Keywords: Carbon Nanotube Field Effect Transistor, Chirality Vector, Current Mirror

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1062200

References:

[1] A. Rahman, Jing Guo, S. Datta, M.S. Lundstrom, "Theory of ballistic nanotransistors," Electron Devices, IEEE Transactions on, vol. 50, no. 10, pp. 1853 - 1864, Sept. 2003.
[2] Stanford University CNFET Model website, http://nano.stanford.edu/model.php?id=23.
[3] Lakkamraju N and Mal.A.K ," A Low Voltage High Output Impedance Bulk Driven Regulated Cascode Current Mirror,"Proc. of the IEEE International ICECT Conference,Apr 2011,pp.79-83.
[4] Raychowdhury A, Roy K, "A Novel Multiple-Valued Logic Design Using Ballistic Carbon Nanotube FETs", \emph{ISMVL, Proceedings of the 34th International Symposium on Multiple- Valued Logic}, pp. 14-19,2004.
[5] Dai H.J, "Carbon nanotubes: opportunities and challeges", Surf.Sci ELSEVIER,500,218, 2002.
[6] J. Appenzeller, "Carbon Nanotubes for High-Performance Electronics—Progress and Prospect," Proceedings of the IEEE Volume 96, Issue 2, pp. 201 - 211, Feb. 2008.
[7] K. Natori, Y. Kimura, T. Shimizu, "Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor," Journal of Applied Physics, vol. 97, pp. 034306-1-7, 2005.
[8] Berkeley Predictive Technology Model website, http://www.eas.asu.edu/–ptm/.