Search results for: Dual material gate

Authors: Hong Li, Linfeng Li, Jianping Hu

Abstract:

With rapid technology scaling, the proportion of the static power consumption catches up with dynamic power consumption gradually. To decrease leakage consumption is becoming more and more important in low-power design. This paper presents a power-gating scheme for P-DTGAL (p-type dual transmission gate adiabatic logic) circuits to reduce leakage power dissipations under deep submicron process. The energy dissipations of P-DTGAL circuits with power-gating scheme are investigated in different processes, frequencies and active ratios. BSIM4 model is adopted to reflect the characteristics of the leakage currents. HSPICE simulations show that the leakage loss is greatly reduced by using the P-DTGAL with power-gating techniques.

Keywords: Leakage reduction, low power, deep submicronCMOS circuits, P-type adiabatic circuits.

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Authors: N.M Abdul Ghani, L.K. Haur, T.P.Yon, F Naim

Abstract:

This project relates to a two-wheeled self balancing robot for transferring loads on different locations along a path. This robot specifically functions as a dual mode navigation to navigate efficiently along a desired path. First, as a plurality of distance sensors mounted at both sides of the body for collecting information on tilt angle of the body and second, as a plurality of speed sensors mounted at the bottom of the body for collecting information of the velocity of the body in relative to the ground. A microcontroller for processing information collected from the sensors and configured to set the path and to balance the body automatically while a processor operatively coupled to the microcontroller and configured to compute change of the tilt and velocity of the body. A direct current motor operatively coupled to the microcontroller for controlling the wheels and characterized in that a remote control is operatively coupled to the microcontroller to operate the robot in dual navigation modes.

Keywords: Two-Wheeled Balancing Robot, Dual Mode Navigation, Remote Control, Desired Path.

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Authors: Hadi Hasanzadeh, Manijhe Mokhtari-Dizaji, S.Zahra Bathaie, Zuhair M. Hassan, Hamid R. Miri, Mahbobe Alamolhoda, Vahid Nilchiani, Hamid Goudarzi

Abstract:

The nanosized polymeric micelles release the drug due to acoustic cavitation, which is enhanced in dual frequency ultrasonic fields. In this study, adult female Balb/C mice were transplanted with spontaneous breast adenocarcinoma tumors and were injected with a dose of 1.3 mg/kg doxorubicin in one of three forms: free doxorubicin, micellar doxorubicin without sonication and micellar doxorubicin with sonication. To increase cavitation yield, the tumor region was sonicated with low level dual frequency of 3 MHz and 28 kHz. The animals were sacrificed 24 h after injection, and their tumor, heart, spleen, liver, kidneys and plasma were separated and homogenized. The drug content in their tumor, heart, spleen, liver, kidneys and plasma was determined using tissue fluorimetry. The results show that in the group that received micellar doxorubicin with sonication, the drug concentration in the tumor tissue was nine and three times higher than in the free doxorubicin group and the micellar doxorubicin without sonication group, respectively. In the micellar doxorubicin with sonication group, the drug concentration in other tissues was lower than other groups (p<0.05). We conclude that dual frequency sonication improves drug release from micelles and increases the drug uptake by tumors due to sonoporation.

Keywords: Nanomicelles, Dual frequency ultrasound, Drug delivery

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Authors: Hani Baek, Gwang Min Sun, Chansun Shin, Sung Ho Ahn

Abstract:

Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO₂ interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.

Keywords: NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center.

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Authors: Santanu Santra, Utpal Roy

Abstract:

Quantum-dot Cellular Automata (QCA) is one of the most substitute emerging nanotechnologies for electronic circuits, because of lower power consumption, higher speed and smaller size in comparison with CMOS technology. The basic devices, a Quantum-dot cell can be used to implement logic gates and wires. As it is the fundamental building block on nanotechnology circuits. By applying XOR gate the hardware requirements for a QCA circuit can be decrease and circuits can be simpler in terms of level, delay and cell count. This article present a modest approach for implementing novel optimized XOR gate, which can be applied to design many variants of complex QCA circuits. Proposed XOR gate is simple in structure and powerful in terms of implementing any digital circuits. In order to verify the functionality of the proposed design some complex implementation of parity generator and parity checker circuits are proposed and simulating by QCA Designer tool and compare with some most recent design. Simulation results and physical relations confirm its usefulness in implementing every digital circuit.

Keywords: Clock, CMOS technology, Logic gates, QCA Designer, Quantum-dot Cellular Automata (QCA).

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Authors: Neeraj K. Chasta

Abstract:

This paper presents an idea for analog current comparison which compares input signal and reference currents with high speed and accuracy. Proposed circuit utilizes amplification properties of common gate configuration, where voltage variations of input current are amplified and a compared output voltage is developed. Cascaded inverter stages are used to generate final CMOS compatible output voltage. Power consumption of circuit can be controlled by the applied gate bias voltage. The comparator is designed and studied at 180nm CMOS process technology for a supply voltage of 3V.

Keywords: Current Mode, Comparator, High Resolution, High Speed.

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Authors: N. Shen, T. T. Le, H. Y. Yu, Z. X. Chen, K. T. Win, N. Singh, G. Q. Lo, D. -L. Kwong

Abstract:

In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.

Keywords: Nanowire (NW), Gate-all-around (GAA), polysilicon (poly-Si), thin-film transistor (TFT).

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Authors: Omid Mirmotahari, Yngvar Berg, Ahmad Habibizad Navin

Abstract:

Reversible logic is becoming more and more prominent as the technology sets higher demands on heat, power, scaling and stability. Reversible gates are able at any time to "undo" the current step or function. Multiple-valued logic has the advantage of transporting and evaluating higher bits each clock cycle than binary. Moreover, we demonstrate in this paper, combining these disciplines we can construct powerful multiple-valued reversible logic structures. In this paper a reversible block implemented by pseudo floatinggate can perform AD-function and a DA-function as its reverse application.

Keywords: Reversible logic, bi-directional, Pseudo floating-gate(PFG), multiple-valued logic (MVL).

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Authors: Z. X. Chen, T. S. Phua, X. P. Wang, G. -Q. Lo, D. -L. Kwong

Abstract:

This paper presents device simulations on the vertical silicon nanowire tunneling FET (VSiNW TFET). Simulations show that a narrow nanowire and thin gate oxide is required for good performance, which is expected even for conventional MOSFETs. The gate length also needs to be more than the nanowire diameter to prevent short channel effects. An effect more unique to TFET is the need for abrupt source to channel junction, which is shown to improve the performance. The ambipolar effect suppression by reducing drain doping concentration is also explored and shown to have little or no effect on performance.

Keywords: Device simulation, MEDICI, tunneling FET (TFET), vertical silicon nanowire.

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Authors: E. Yosry, W. Fikry, A. El-henawy, M. Marzouk

Abstract:

This work offers a study of new simple compact model of dual-drain Magnetic Field Effect Transistor (MAGFET) including geometrical effects and biasing dependency. An explanation of the sensitivity is investigated, involving carrier deflection as the dominant operating principle. Finally, model verification with simulation results is introduced to ensure that acceptable error of 2% is achieved.

Keywords: MAGFET, Modeling, Simulation, Split-drain.

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Authors: K. Maria Agnes, J. Joshua Bapu

Abstract:

This paper impart the design and testing of Nanotechnology based sequential circuits using multiplexer conservative QCA (MX-CQCA) logic gates, which is easily testable using only two vectors. This method has great prospective in the design of sequential circuits based on reversible conservative logic gates and also smashes the sequential circuits implemented in traditional gates in terms of testability. Reversible circuits are similar to usual logic circuits except that they are built from reversible gates. Designs of multiplexer conservative QCA logic based two vectors testable double edge triggered (DET) sequential circuits in VHDL language are also accessible here; it will also diminish intricacy in testing side. Also other types of sequential circuits such as D, SR, JK latches are designed using this MX-CQCA logic gate. The objective behind the proposed design methodologies is to amalgamate arithmetic and logic functional units optimizing key metrics such as garbage outputs, delay, area and power. The projected MX-CQCA gate outshines other reversible gates in terms of the intricacy, delay.

Keywords: Conservative logic, Double edge triggered (DET) flip flop, majority voters, MX-CQCA gate, reversible logic, Quantum dot Cellular automata.

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Authors: Ramin Khamedi, Isa Ahmadi

Abstract:

In this study acoustic emission (AE) signals obtained during deformation and fracture of two types of ferrite-martensite dual phase steels (DPS) specimens have been analyzed in frequency domain. For this reason two low carbon steels with various amounts of carbon were chosen, and intercritically heat treated. In the introduced method, identifying the mechanisms of failure in the various phases of DPS is done. For this aim, AE monitoring has been used during tensile test of several DPS with various volume fraction of the martensite (VM) and attempted to relate the AE signals and failure mechanisms in these steels. Different signals, which referred to 2-3 micro-mechanisms of failure due to amount of carbon and also VM have been seen. By Fast Fourier Transformation (FFT) of signals in distinct locations, an excellent relationship between peak frequencies in these areas and micro-mechanisms of failure were seen. The results were verified by microscopic observations (SEM).

Keywords: Dual Phase Steel, Deformation, Acoustic Emission.

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Authors: Florian Gschösser, Walter Purrer

Abstract:

The paper shows examples for the (environmental) optimization of production processes for asphalt mixtures applied for typical road pavements in Austria and Switzerland. The conducted “from-cradle-to-gate” LCA firstly analyzes the production one cubic meter of asphalt and secondly all material production processes for exemplary highway pavements applied in Austria and Switzerland. It is shown that environmental impacts can be reduced by the application of reclaimed asphalt pavement (RAP) and by the optimization of specific production characteristics, e.g. the reduction of the initial moisture of the mineral aggregate and the reduction of the mixing temperature by the application of low-viscosity and foam bitumen. The results of the LCA study demonstrate reduction potentials per cubic meter asphalt of up to 57 % (Global Warming Potential–GWP) and 77 % (Ozone depletion–ODP). The analysis per square meter of asphalt pavement determined environmental potentials of up to 40 % (GWP) and 56 % (ODP).

Keywords: Asphalt mixtures, environmental potentials, life cycle assessment, material production.

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Authors: Xiang Li, Zhixian Chen, Zheng Fang, Aashit Kamath, Xinpeng Wang, Navab Singh, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We integrate TiN/Ni/HfO2/Si RRAM cell with a vertical gate-all-around (GAA) nanowire transistor to achieve compact 4F2 footprint in a 1T1R configuration. The tip of the Si nanowire (source of the transistor) serves as bottom electrode of the memory cell. Fabricated devices with nanowire diameter ~ 50nm demonstrate ultra-low current/power switching; unipolar switching with 10μA/30μW SET and 20μA/30μW RESET and bipolar switching with 20nA/85nW SET and 0.2nA/0.7nW RESET. Further, the switching current is found to scale with nanowire diameter making the architecture promising for future scaling.

Keywords: RRAM, 1T1R, gate-all-around FET, nanowire FET, vertical MOSFETs

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Authors: Yu-Ching Yang, Haw-Long Lee, Win-Jin Chang

Abstract:

The present work numerically analyzes the transient heat transfer in the absorber plates of a flat-plate solar collector based on the dual-phase-lag (DPL) heat conduction model. An efficient numerical scheme involving the hybrid application of the Laplace transform and control volume methods is used to solve the linear hyperbolic heat conduction equation. This work also examines the effect of different medium parameters on the behavior of heat transfer. Results show that, while the heat-flux phase lag induces thermal waves in the medium, the temperature-gradient phase lag smoothens the thermal waves by promoting non-Fourier diffusion-like conduction into the medium.

Keywords: Absorber plates, dual-phase-lag, non-Fourier, solar collector.

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Authors: Lee Woong-Kyu

Abstract:

Fierce competition in smartphone market may encourage users to switch brands when buying a new smartphone. However, many smartphone users continue to use the same brand although other branded smartphones are perceived to be more attractive. The purpose of this study is to identify and analyze the effects of brand loyalty toward incumbent smartphone on new smartphone adoption. For this purpose, a research model including two hypotheses, the positive effect on rational judgments and the negative effect on rational judgments, are proposed based on the dual process theory. For the validation of the research model, the data was collected by surveying Korean university students and tested by the group comparison between high and low brand loyalty. The results show that the two hypotheses were statistically supported.

Keywords: Brand loyalty, dual process theory, incumbent smartphone, smartphone adoption.

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Authors: Jae-Chang Kwak, Yong-Seo Koo

Abstract:

The high efficiency power management IC (PMIC) with switching device is presented in this paper. PMIC is controlled with PFM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS (DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increase, resulting in a much higher current handling capability than standard MOSFET. PFM control circuits consist of a generator, AND gate and comparator. The generator is made to have 1.2MHz oscillation voltage. The DC-DC converter based on PFM control circuit and low on-resistance switching device is presented in this paper.

Keywords: DT-CMOS, PMIC, PFM, DC-DC converter.

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Authors: Wen-Chi Hung, Tung-Kai Liu, Ming-Shan Tsai, Chun-Che Lee, I-Min Jiang

Abstract:

This study investigates a voltage-controllable liquid crystals lens with a Fresnel zone electrode. When applying a proper voltage on the liquid crystal cell, a Fresnel-zone-distributed electric field is induced to direct liquid crystals aligned in a concentric structure. Owing to the concentrically aligned liquid crystals, a Fresnel lens is formed. We probe the Fresnel liquid crystal lens using a polarized incident beam with a wavelength of 632.8 nm, finding that the diffraction efficiency depends on the applying voltage. A remarkable diffraction efficiency of ~39.5 % is measured at the voltage of 0.9V. Additionally, a dual focus lens is fabricated by attaching a plane-convex lens to the Fresnel liquid crystals cell. The Fresnel LC lens and the dual focus lens may be applied for DVD/CD pick-up head, confocal microscopy system, or electrically-controlling optical systems.

Keywords: Liquid Crystals Lens, Fresnel Lens, and Dual focus

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Authors: Pierre-Louis Cayrel, Sidi Mohamed El Yousfi Alaoui

Abstract:

In this paper, we propose a dual version of the first threshold ring signature scheme based on error-correcting code proposed by Aguilar et. al in [1]. Our scheme uses an improvement of Véron zero-knowledge identification scheme, which provide smaller public and private key sizes and better computation complexity than the Stern one. This scheme is secure in the random oracle model.

Keywords: Stern algorithm, Véron algorithm, threshold ring signature, post-quantum cryptography.

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Authors: V. Tawiwat, S. Sarawut

Abstract:

Applied a mouse-s roller with a gripper to increase the efficiency for a gripper can learn to a material handling without slipping. To apply a gripper, we use the optimize principle to develop material handling by use a signal for checking a roller mouse that rotate or not. In case of the roller rotates means that the material slips. A gripper will slide to material handling until the roller will not rotate. As this experiment has test material handling for comparing a grip force that uses to material handling of the 10-human with the applied gripper. We can summarize that human exert the material handling more than the applied gripper. Because of the gripper can exert more befit to material handling than human and may be a minimum force to lift a material without slipping.

Keywords: Optimize, Gripper, Mouse's Roller, Minimum Force.

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Authors: G. Renuka Devi

Abstract:

This paper analyzes the experimental investigation of indirect field oriented control of Field Programmable Gate Array (FPGA) based five-phase induction motor drive. A detailed d-q modeling and Space Vector Pulse Width Modulation (SVPWM) technique of 5-phase drive is elaborated in this paper. In the proposed work, the prototype model of 1 hp 5-phase Voltage Source Inverter (VSI) fed drive is implemented in hardware. SVPWM pulses are generated in FPGA platform through Very High Speed Integrated Circuit Hardware Description Language (VHDL) coding. The experimental results are observed under different loading conditions and compared with simulation results to validate the simulation model.

Keywords: Five-phase induction motor drive, field programmable gate array, indirect field oriented control, multi-phase, space vector pulse width modulation, voltage source inverter, very high speed integrated circuit hardware description language.

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Authors: Sahil, Rajeev Saha, Sanjeev Kumar

Abstract:

Material selection is one of the key issues for the production of reliable and quality products in industries. A number of materials are available for a single product due to which material selection become a difficult task. The aim of this paper is to select appropriate material for gear used in fuel pump by using Graph Theory and Matrix Approach (GTMA). GTMA is a logical and systematic approach that can be used to model and analyze various engineering systems. In present work, four alternative material and their seven attributes are used to identify the best material for given product.

Keywords: Material, GTMA, MADM, digraph, decision making.

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Authors: C. Worakitjaroenphon, A. Oonsivilai

Abstract:

The study of piezoelectric material in the past was in T-Domain form; however, no one has studied piezoelectric material in the S-Domain form. This paper will present the piezoelectric material in the transfer function or S-Domain model. S-Domain is a well known mathematical model, used for analyzing the stability of the material and determining the stability limits. By using S-Domain in testing stability of piezoelectric material, it will provide a new tool for the scientific world to study this material in various forms.

Keywords: Piezoelectric, Stability, S-Domain, Transfer function

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Authors: Shobha Sharma, Amita Dev

Abstract:

This research paper presents highly optimized barrel shifter at 22nm Hi K metal gate strained Si technology node. This barrel shifter is having a unique combination of static and dynamic body bias which gives lowest power delay product. This power delay product is compared with the same circuit at same technology node with static forward biasing at ‘supply/2’ and also with normal reverse substrate biasing and still found to be the lowest. The power delay product of this barrel sifter is .39362X10-17J and is lowered by approximately 78% to reference proposed barrel shifter at 32nm bulk CMOS technology. Power delay product of barrel shifter at 22nm Hi K Metal gate technology with normal reverse substrate bias is 2.97186933X10-17J and can be compared with this design’s PDP of .39362X10-17J. This design uses both static and dynamic substrate biasing and also has approximately 96% lower power delay product compared to only forward body biased at half of supply voltage. The NMOS model used are predictive technology models of Arizona state university and the simulations to be carried out using HSPICE simulator.

Keywords: Dynamic body biasing, highly optimized barrel shifter, PDP, Static body biasing.

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Authors: Farid Moshgelani, Dhamin Al-Khalili, Côme Rozon

Abstract:

In this paper, FinFET devices are analyzed with emphasis on sub-threshold leakage current control. This is achieved through proper biasing of the back gate, and through the use of asymmetric work functions for the four terminal FinFET devices. We are also examining different configurations of multiplexers and XOR gates using transistors of symmetric and asymmetric work functions. Based on extensive characterization data for MUX circuits, our proposed configuration using symmetric devices lead to leakage current and delay improvements of 65% and 47% respectively compared to results in the literature. For XOR gates, a 90% improvement in the average leakage current is achieved by using asymmetric devices. All simulations are based on a 25nm FinFET technology using the University of Florida UFDG model.

Keywords: FinFET, logic functions, asymmetric workfunction devices, back gate biasing, sub-threshold leakage current.

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Authors: Belkacem Brahmi, Mohand Ouamer Bibi

Abstract:

In this paper, we present a new method for solving quadratic programming problems, not strictly convex. Constraints of the problem are linear equalities and inequalities, with bounded variables. The suggested method combines the active-set strategies and support methods. The algorithm of the method and numerical experiments are presented, while comparing our approach with the active set method on randomly generated problems.

Keywords: Convex quadratic programming, dual support methods, active set methods.

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Authors: N. Fhafhiem, P. Krachodnok, R. Wongsan

Abstract:

This paper proposes the development and design of double layer metamaterials based on electromagnetic band gap (EBG) rods as a superstrate of a resonator antenna to enhance required antenna characteristics for the mobile base station. The metallic rod type metamaterial can partially reflect wave of a primary radiator. The antenna was designed and analyzed by a simulation result from CST Microwave Studio and designed technique could be confirmed by a measurement results from prototype antenna that agree with simulation results. The results indicate that the antenna can also generate a dual polarization by using a 45˚ oriented curved strip dipole located at the center of the reflector plane with double layer superstrate. It can be used to simplify the feed system of an antenna. The proposed antenna has a bandwidth covering the frequency range of 1920 – 2200 MHz, the gain of the antenna increases up to 14.06 dBi. In addition, an interesting sectoral 60˚ pattern is presented in horizontal plane.

Keywords: Metamaterial, electromagnetic band gap, dual polarization, resonator antenna.

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Authors: M. M. Karkhanehchi, A. Ammani

Abstract:

A simple analytical model has been developed to optimize biasing conditions for obtaining maximum linearity among lattice-matched, pseudomorphic and metamorphic HEMT types as well as enhancement and depletion HEMT modes. A nonlinear current-voltage model has been simulated based on extracted data to study and select the most appropriate type and mode of HEMT in terms of a given gate-source biasing voltage within the device so as to employ the circuit for the highest possible output current or voltage linear swing. Simulation results can be used as a basis for the selection of optimum gate-source biasing voltage for a given type and mode of HEMT with regard to a circuit design. The consequences can also be a criterion for choosing the optimum type or mode of HEMT for a predetermined biasing condition.

Keywords: Biasing, characteristic, linearity, simulation.

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Authors: M. Elsisi, M. Soliman, M. A. S. Aboelela, W. Mansour

Abstract:

This paper considers the design of Dual Proportional- Integral (DPI) Load Frequency Control (LFC), using gravitational search algorithm (GSA). The design is carried out for nonlinear hydrothermal power system where generation rate constraint (GRC) and governor dead band are considered. Furthermore, time delays imposed by governor-turbine, thermodynamic process, and communication channels are investigated. GSA is utilized to search for optimal controller parameters by minimizing a time-domain based objective function. GSA-based DPI has been compared to Ziegler- Nichols based PI, and Genetic Algorithm (GA) based PI controllers in order to demonstrate the superior efficiency of the proposed design. Simulation results are carried for a wide range of operating conditions and system parameters variations.

Keywords: Gravitational Search Algorithm (GSA), Load Frequency Control (LFC), Dual Proportional-Integral (DPI) controller.

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Authors: M. Nosik, I. Rymanova, N. Adamovich, S. Sevostyanihin, K. Ryzhov, Y. Kuimova, A. Kravtchenko, N. Sergeeva, A. Sobkin

Abstract:

HIV and Tuberculosis (TB) infections each speed the other's progress. HIV-infection increases the risk of TB disease. At the same time, TB infection is associated with clinical progression of HIV-infection. HIV+TB co-infected patients are also at higher risk of acquiring new opportunistic infections. An important feature of disease progression and clinical outcome is the innate and acquired immune responses. HIV and TB, however, have a spectrum of dysfunctions of the immune response. As cytokines play a crucial role in the immunopathology of both infections, it is important to study immune interactions in patients with dual infection HIV+TB. Plasma levels of proinflammatory cytokines IL-2, IFN-γ and immunoregulating cytokines IL-4, IL-10 were evaluated in 75 patients with dual infection HIV+TB, 58 patients with HIV monoinfection and 50 patients with TB monoinfection who were previously naïve for HAART. The decreased levels of IL-2, IFN-γ, IL-4 and IL-10 were observed in patients with dual infection HIV+TB in comparison with patients who had only HIV or TB which means the profound suppression of Th1 and Th2 cytokine secretion. Thus, those cytokines could possibly serve as immunological markers of progression of HIV-infection in patients with TB.

Keywords: HIV, Tuberculosis, TB, HIV associated with TB, Th1/ Th2 cytokine expression.

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