Search results for: Semiconductor Optical Amplifier (SOA).
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 851

Search results for: Semiconductor Optical Amplifier (SOA).

311 Performance Evaluation of Improved Ball End Magnetorheological Finishing Process

Authors: Anant Kumar Singh, Sunil Jha, Pulak M. Pandey

Abstract:

A novel nanofinishing process using improved ball end magnetorheological (MR) finishing tool was developed for finishing of flat as well as 3D surfaces of ferromagnetic and non ferromagnetic workpieces. In this process a magnetically controlled ball end of smart MR polishing fluid is generated at the tip surface of the tool which is used as a finishing medium and it is guided to follow the surface to be finished through computer controlled 3-axes motion controller. The experiments were performed on ferromagnetic workpiece surface in the developed MR finishing setup to study the effect of finishing time on final surface roughness. The performance of present finishing process on final finished surface roughness was studied. The surface morphology was observed under scanning electron microscopy and atomic force microscope. The final surface finish was obtained as low as 19.7 nm from the initial surface roughness of 142.9 nm. The outcome of newly developed finishing process can be found useful in its applications in aerospace, automotive, dies and molds manufacturing industries, semiconductor and optics machining etc.

Keywords: Ball end MR finishing tool, Magnetorheological finishing, Nanofinishing

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310 Optical Properties of Some A2BCl4 Type Chlorides

Authors: D. H. Gahane, B. M. Bahirwar, S. V. Moharil

Abstract:

Efficient luminescence is reported for the first time in Eu2+ activated double Chlorides A2BCl4 (A=Alkali metal, B=Alkaline earth element). A simple wet-chemical preparation is described. Emission intensities are comparable to that of the commercial phosphor. Excitation covers near UV region. These phosphors may be useful for applications like solid state lighting, scintillation detectors and X-ray storage using photo-stimulable phosphors.

Keywords: Alkaline Earth, Chloride, Luminescence.

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309 Hybrid Prefix Adder Architecture for Minimizing the Power Delay Product

Authors: P.Ramanathan, P.T.Vanathi

Abstract:

Parallel Prefix addition is a technique for improving the speed of binary addition. Due to continuing integrating intensity and the growing needs of portable devices, low-power and highperformance designs are of prime importance. The classical parallel prefix adder structures presented in the literature over the years optimize for logic depth, area, fan-out and interconnect count of logic circuits. In this paper, a new architecture for performing 8-bit, 16-bit and 32-bit Parallel Prefix addition is proposed. The proposed prefix adder structures is compared with several classical adders of same bit width in terms of power, delay and number of computational nodes. The results reveal that the proposed structures have the least power delay product when compared with its peer existing Prefix adder structures. Tanner EDA tool was used for simulating the adder designs in the TSMC 180 nm and TSMC 130 nm technologies.

Keywords: Parallel Prefix Adder (PPA), Dot operator, Semi-Dotoperator, Complementary Metal Oxide Semiconductor (CMOS), Odd-dot operator, Even-dot operator, Odd-semi-dot operator andEven-semi-dot operator.

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308 A Review of Emerging Technologies in Antennas and Phased Arrays for Avionics Systems

Authors: Muhammad Safi, Abdul Manan

Abstract:

In recent years, research in aircraft avionics systems (i.e., radars and antennas) has grown revolutionary. Aircraft technology is experiencing an increasing inclination from all mechanical to all electrical aircraft, with the introduction of inhabitant air vehicles and drone taxis over the last few years. This develops an overriding need to summarize the history, latest trends, and future development in aircraft avionics research for a better understanding and development of new technologies in the domain of avionics systems. This paper focuses on the future trends in antennas and phased arrays for avionics systems. Along with the general overview of the future avionics trend, this work describes the review of around 50 high-quality research papers on aircraft communication systems. Electric-powered aircrafts have been a hot topic in the modern aircraft world. Electric aircrafts have supremacy over their conventional counterparts. Due to increased drone taxi and urban air mobility, fast and reliable communication is very important, so concepts of Broadband Integrated Digital Avionics Information Exchange Networks (B-IDAIENs) and Modular Avionics are being researched for better communication of future aircraft. A Ku-band phased array antenna based on a modular design can be used in a modular avionics system. Furthermore, integrated avionics is also emerging research in future avionics. The main focus of work in future avionics will be using integrated modular avionics and infra-red phased array antennas, which are discussed in detail in this paper. Other work such as reconfigurable antennas and optical communication, are also discussed in this paper. The future of modern aircraft avionics would be based on integrated modulated avionics and small artificial intelligence-based antennas. Optical and infrared communication will also replace microwave frequencies.

Keywords: AI, avionics systems, communication, electric aircrafts, Infra-red, integrated avionics, modular avionics, phased array, reconfigurable antenna, UAVs.

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307 Surface Phonon Polariton in InAlGaN Quaternary Alloys

Authors: S. S. Ng, Z. Hassan, H. Abu Hassan

Abstract:

III-nitride quaternary InxAlyGa1-x-yN alloys have experienced considerable interest as potential materials for optoelectronic applications. Despite these interesting applications and the extensive efforts to understand their fundamental properties, research on its fundamental surface property, i.e., surface phonon polariton (SPP) has not yet been reported. In fact, the SPP properties have been shown to provide application for some photonic devices. Hence, there is an absolute need for thorough studies on the SPP properties of this material. In this work, theoretical study on the SPP modes in InAlGaN quaternary alloys are reported. Attention is focus on the wurtzite (α-) structure InxAlyGa1-x-yN semi-crystal with different In composition, x ranging from 0 to 0.10 and constant Al composition, y = 0.06. The SPP modes are obtained through the theoretical simulation by means of anisotropy model. The characteristics of SP dispersion curves are discussed. Accessible results in terms of the experimental point of view are also given. Finally, the results revealed that the SPP mode of α-InxAlyGa1-x-yN semiconductors exhibits two-mode behavior.

Keywords: III-nitride semiconductor, attenuated total reflection, quaternary alloy, surface phonon polariton.

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306 A Soft Switching PWM DC-DC Boost Converter with Increased Efficiency by Using ZVT-ZCT Techniques

Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy

Abstract:

In this paper, an improved active snubber cell is proposed on account of soft switching (SS) family of pulse width modulation (PWM) DC-DC converters. The improved snubber cell provides zero-voltage transition (ZVT) turn on and zero-current transition (ZCT) turn off for main switch. The snubber cell decreases EMI noise and operates with SS in a wide range of line and load voltages. Besides, all of the semiconductor devices in the converter operate with SS. There is no additional voltage and current stress on the main devices. Additionally, extra voltage stress does not occur on the auxiliary switch and its current stress is acceptable value. The improved converter has a low cost and simple structure. The theoretical analysis of converter is clarified and the operating states are given in detail. The experimental results of converter are obtained by prototype of 500 W and 100 kHz. It is observed that the experimental results and theoretical analysis of converter are suitable with each other perfectly.

Keywords: Active snubber cells, DC-DC converters, zero-voltage transition, zero-current transition.

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305 Experimental Investigation on Activated Carbon Based Cryosorption Pump

Authors: K. B. Vinay, K. G. Vismay, S. Kasturirengan, G. A. Vivek

Abstract:

Cryosorption pumps are considered safe, quiet, and ultra-high vacuum production pumps which have their application from Semiconductor industries to ITER [International Thermonuclear Experimental Reactor] units. The principle of physisorption of gases over highly porous materials like activated charcoal at cryogenic temperatures (below -1500°C) is involved in determining the pumping speed of gases like Helium, Hydrogen, Argon, and Nitrogen. This paper aims at providing detailed overview of development of Cryosorption pump and characterization of different activated charcoal materials that optimizes the performance of the pump. Different grades of charcoal were tested in order to determine the pumping speed of the pump and were compared with commercially available Varian cryopanel. The results for bare panel, bare panel with adhesive, cryopanel with pellets, and cryopanel with granules were obtained and compared. The comparison showed that cryopanel adhered with small granules gave better pumping speeds than large sized pellets.

Keywords: Adhesive, cryopanel, granules, pellets.

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304 CMOS Positive and Negative Resistors Based on Complementary Regulated Cascode Topology with Cross-Coupled Regulated Transistors

Authors: Kittipong Tripetch, Nobuhiko Nakano

Abstract:

Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at  ±0.9 V.

Keywords: Complementary common gate, complementary regulated cascode, current mirror, floating active resistors.

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303 Completion Latin Square for Wavelength Routing

Authors: Ali Habiboghli, Rouhollah Mostafaei, Vasif Nabiyev

Abstract:

Optical network uses a tool for routing called Latin router. These routers use particular algorithms for routing. For example, we can refer to LDF algorithm that uses backtracking (one of CSP methods) for problem solving. In this paper, we proposed new approached for completion routing table (DRA&CRA algorithm) and compare with pervious proposed ways and showed numbers of backtracking, blocking and run time for DRA algorithm less than LDF and CRA algorithm.

Keywords: Latin Router, Constraint Satisfaction Problem, Wavelength Routing.

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302 A Comparative Study on Optimized Bias Current Density Performance of Cubic ZnB-GaN with Hexagonal 4H-SiC Based Impatts

Authors: Arnab Majumdar, Srimani Sen

Abstract:

In this paper, a vivid simulated study has been made on 35 GHz Ka-band window frequency in order to judge and compare the DC and high frequency properties of cubic ZnB-GaN with the existing hexagonal 4H-SiC. A flat profile p+pnn+ DDR structure of impatt is chosen and is optimized at a particular bias current density with respect to efficiency and output power taking into consideration the effect of mobile space charge also. The simulated results obtained reveals the strong potentiality of impatts based on both cubic ZnB-GaN and hexagonal 4H-SiC. The DC-to-millimeter wave conversion efficiency for cubic ZnB-GaN impatt obtained is 50% with an estimated output power of 2.83 W at an optimized bias current density of 2.5×108 A/m2. The conversion efficiency and estimated output power in case of hexagonal 4H-SiC impatt obtained is 22.34% and 40 W respectively at an optimum bias current density of 0.06×108 A/m2.

Keywords: Cubic ZnB-GaN, hexagonal 4H-SiC, Double drift impatt diode, millimeter wave, optimized bias current density, wide band gap semiconductor.

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301 Fabrication and Characterization of CdS Nanoparticles Annealed by using Different Radiations

Authors: Aneeqa Sabah, Saadat Anwar Siddiqi, Salamat Ali

Abstract:

The systematic manipulations of shapes and sizes of inorganic compounds greatly benefit the various application fields including optics, magnetic, electronics, catalysis and medicine. However shape control has been much more difficult to achieve. Hence exploration of novel method for the preparation of differently shaped nanoparticles is challenging research area. II-VI group of semiconductor cadmium sulphide (CdS) nanostructure with different morphologies (such as, acicular like, mesoporous, spherical shapes) and of crystallite sizes vary from 11 to 16 nm were successfully synthesized by chemical aqueous precipitation of Cd2+ ions with homogeneously released S2- ions from decomposition of cadmium sulphate (CdSO4) and thioacetamide (CH3CSNH2) by annealing at different radiations (microwave, ultrasonic and sunlight) with matter and systematic research has been done for various factors affecting the controlled growth rate of CdS nanoparticles. The obtained nanomaterials have been characterized by X-ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR), Thermogravometric (DSC-TGA) analysis and Scanning Electron Microscopy (SEM). The result indicates that on increasing the reaction time particle size increases but on increasing the molar ratios grain size decreases.

Keywords: CdS nanoparticles, Morphology, Oxidation, Radiations

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300 Two Different Solutions for Gigabit Ethernet Transmission over POF

Authors: Stefano Straullu, Silvio Abrate, Antonino Nespola, Paolo Savio, Roberto Gaudino

Abstract:

Two completely different approaches for a Gigabit Ethernet compliant stream transmission over 50m of 1mm PMMA SI-POF have been experimentally demonstrated and are compared in this paper. The first solution is based on a commercial RC-LED transmission and a careful optimization of the physical layer architecture, realized during the POF-PLUS EU Project. The second solution exploits the performance of an edge-emitting laser at the transmitter side in order to avoid any sort of electrical equalization at the receiver side.

Keywords: Gigabit Ethernet, Home Networking, Step-Index Polymer Optical Fiber (SI-POF)

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299 Using Artificial Neural Networks for Optical Imaging of Fluorescent Biomarkers

Authors: K. A. Laptinskiy, S. A. Burikov, A. M. Vervald, S. A. Dolenko, T. A. Dolenko

Abstract:

The article presents the results of the application of artificial neural networks to separate the fluorescent contribution of nanodiamonds used as biomarkers, adsorbents and carriers of drugs in biomedicine, from a fluorescent background of own biological fluorophores. The principal possibility of solving this problem is shown. Use of neural network architecture let to detect fluorescence of nanodiamonds against the background autofluorescence of egg white with high accuracy - better than 3 ug/ml.

Keywords: Artificial neural networks, fluorescence, data aggregation.

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298 Polarization Modulation by free-Standing Asymmetric Hole Arrays

Authors: Hong-Wen Hsieh, Shun-Tung Yen

Abstract:

We theoretically demonstrate modulation of light polarization by a crossed rectangular hole array with asymmetric arm lengths. There are two waveguide modes that can modulate the x- and y- polarized incident waves independently. A specific structure is proposed to convert a left-hand incident wave to a right-hand outgoing wave by transmission.

Keywords: Crossed rectangular hole array, extraordinary optical transmission, polarization modulation.

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297 Formation of (Ga,Mn)N Dilute Magnetic Semiconductor by Manganese Ion Implantation

Authors: N.S. Pradhan, S.K. Dubey, A. D.Yadav, Arvind Singh, D.C. Kothari

Abstract:

Un-doped GaN film of thickness 1.90 mm, grown on sapphire substrate were uniformly implanted with 325 keV Mn+ ions for various fluences varying from 1.75 x 1015 - 2.0 x 1016 ions cm-2 at 3500 C substrate temperature. The structural, morphological and magnetic properties of Mn ion implanted gallium nitride samples were studied using XRD, AFM and SQUID techniques. XRD of the sample implanted with various ion fluences showed the presence of different magnetic phases of Ga3Mn, Ga0.6Mn0.4 and Mn4N. However, the compositions of these phases were found to be depended on the ion fluence. AFM images of non-implanted sample showed micrograph with rms surface roughness 2.17 nm. Whereas samples implanted with the various fluences showed the presence of nano clusters on the surface of GaN. The shape, size and density of the clusters were found to vary with respect to ion fluence. Magnetic moment versus applied field curves of the samples implanted with various fluences exhibit the hysteresis loops. The Curie temperature estimated from zero field cooled and field cooled curves for the samples implanted with the fluence of 1.75 x 1015, 1.5 x 1016 and 2.0 x 1016 ions cm-2 was found to be 309 K, 342 K and 350 K respectively.

Keywords: GaN, Ion implantation, XRD, AFM, SQUID

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296 Propagation of Cos-Gaussian Beam in Photorefractive Crystal

Authors: A. Keshavarz

Abstract:

A physical model for guiding the wave in photorefractive media is studied. Propagation of cos-Gaussian beam as the special cases of sinusoidal-Gaussian beams in photorefractive crystal is simulated numerically by the Crank-Nicolson method in one dimension. Results show that the beam profile deforms as the energy transfers from the center to the tails under propagation. This simulation approach is of significant interest for application in optical telecommunication. The results are presented graphically and discussed.

Keywords: Beam propagation, cos-Gaussian beam, Numerical simulation, Photorefractive crystal.

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295 Hybrid Pulse Width Modulation Techniques for the Reduction of Switching Losses and Voltage Harmonics in Cascaded Multilevel Inverters

Authors: Venkata Reddy Kota

Abstract:

These days, the industrial trend is moving away from heavy and bulky passive components to power converter systems that use more and more semiconductor elements. Also, it is difficult to connect the traditional converters to the high and medium voltage. For these reasons, a new family of multilevel inverters has appeared as a solution for working with higher voltage levels. Different modulation topologies like Sinusoidal Pulse Width Modulation (SPWM), Selective Harmonic Elimination Pulse Width Modulation (SHE-PWM) are available for multilevel inverters. In this work, different hybrid modulation techniques which are combination of fundamental frequency modulation and multilevel sinusoidal-modulation are compared. The main characteristic of these modulations are reduction of switching losses with good harmonic performance and balanced power loss dissipation among the device. The proposed hybrid modulation schemes are developed and simulated in Matlab/Simulink for cascaded H-bridge inverter. The results validate the applicability of the proposed schemes for cascaded multilevel inverter.

Keywords: Hybrid PWM techniques, Cascaded Multilevel Inverters, Switching loss minimization.

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294 Red Diode Laser in the Treatment of Epidermal Diseases in PDT

Authors: Farhad H. Mustafa, Mohamad S. Jaafar , Asaad H. Ismail, Ahamad F. Omar, Zahra A. Timimi, Hend A. A. Houssein

Abstract:

The process of laser absorption in the skin during laser irradiation was a critical point in medical application treatments. Delivery the correct amount of laser light is a critical element in photodynamic therapy (PDT). More amounts of laser light able to affect tissues in the skin and small amount not able to enhance PDT procedure in skin. The knowledge of the skin tone laser dependent distribution of 635 nm radiation and its penetration depth in skin is a very important precondition for the investigation of advantage laser induced effect in (PDT) in epidermis diseases (psoriasis). The aim of this work was to estimate an optimum effect of diode laser (635 nm) on the treatment of epidermis diseases in different color skin. Furthermore, it is to improve safety of laser in PDT in epidermis diseases treatment. Advanced system analytical program (ASAP) which is a new approach in investigating the PDT, dependent on optical properties of different skin color was used in present work. A two layered Realistic Skin Model (RSM); stratum corneum and epidermal with red laser (635 nm, 10 mW) were used for irradiative transfer to study fluence and absorbance in different penetration for various human skin colors. Several skin tones very fair, fair, light, medium and dark are used to irradiative transfer. This investigation involved the principles of laser tissue interaction when the skin optically injected by a red laser diode. The results demonstrated that the power characteristic of a laser diode (635 nm) can affect the treatment of epidermal disease in various color skins. Power absorption of the various human skins were recorded and analyzed in order to find the influence of the melanin in PDT treatment in epidermal disease. A two layered RSM show that the change in penetration depth in epidermal layer of the color skin has a larger effect on the distribution of absorbed laser in the skin; this is due to the variation of the melanin concentration for each color.

Keywords: Photodynamic therapy, Realistic skin model, Laser, Light penetration, simulation, Optical properties of skin, Melanin.

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293 Optimization of HALO Structure Effects in 45nm p-type MOSFETs Device Using Taguchi Method

Authors: F. Salehuddin, I. Ahmad, F. A. Hamid, A. Zaharim, H. A. Elgomati, B. Y. Majlis, P. R. Apte

Abstract:

In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/μm.

Keywords: Optimization, p-type MOSFETs device, HALO Structure, Taguchi Method.

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292 Long-term Monitor of Seawater by using TiO2:Ru Sensing Electrode for Hard Clam Cultivation

Authors: Jung-Chuan Chou, Cheng-Wei Chen

Abstract:

The hard clam (meretrix lusoria) cultivated industry has been developed vigorously for recent years in Taiwan, and seawater quality determines the cultivated environment. The pH concentration variation affects survival rate of meretrix lusoria immediately. In order to monitor seawater quality, solid-state sensing electrode of ruthenium-doped titanium dioxide (TiO2:Ru) is developed to measure hydrogen ion concentration in different cultivated solutions. Because the TiO2:Ru sensing electrode has high chemical stability and superior sensing characteristics, thus it is applied as a pH sensor. Response voltages of TiO2:Ru sensing electrode are readout by instrument amplifier in different sample solutions. Mean sensitivity and linearity of TiO2:Ru sensing electrode are 55.20 mV/pH and 0.999 from pH1 to pH13, respectively. We expect that the TiO2:Ru sensing electrode can be applied to real environment measurement, therefore we collect two sample solutions by different meretrix lusoria cultivated ponds in the Yunlin, Taiwan. The two sample solutions are both measured for 200 seconds after calibration of standard pH buffer solutions (pH7, pH8 and pH 9). Mean response voltages of sample 1 and sample 2 are -178.758 mV (Standard deviation=0.427 mV) and -180.206 mV (Standard deviation =0.399 mV), respectively. Response voltages of the two sample solutions are between pH 8 and pH 9 which conform to weak alkali range and suitable meretrix lusoria growth. For long-term monitoring, drift of cultivated solutions (sample 1 and sample 2) are 1.16 mV/hour and 1.03 mV/hour, respectively.

Keywords: Co-sputtering system, Hard clam (meretrix lusoria), Ruthenium-doped titanium dioxide, Solid-state sensing electrode.

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291 Single Spectrum End Point Predict of BOF with SVM

Authors: Ling-fei Xu, Qi Zhao, Yan-ru Chen, Mu-chun Zhou, Meng Zhang, Shi-xue Xu

Abstract:

SVM ( Support Vector Machine ) is a new method in the artificial neural network ( ANN ). In the steel making, how to use computer to predict the end point of BOF accuracy is a great problem. A lot of method and theory have been claimed, but most of the results is not satisfied. Now the hot topic in the BOF end point predicting is to use optical way the predict the end point in the BOF. And we found that there exist some regular in the characteristic curve of the flame from the mouse of pudding. And we can use SVM to predict end point of the BOF, just single spectrum intensity should be required as the input parameter. Moreover, its compatibility for the input space is better than the BP network.

Keywords: SVM, predict, BOF, single spectrum intensity.

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290 Synthesis and Characterization of Nickel and Sulphur Sensitized Zinc Oxide Structures

Authors: Ella C. Linganiso, Bonex W. Mwakikunga, Trilock Singh, Sanjay Mathur, Odireleng M. Ntwaeaborwa

Abstract:

The use of nanostructured semiconducting material to catalyze degradation of environmental pollutants still receives much attention to date. One of the desired characteristics for pollutant degradation under ultra-violet visible light is the materials with extended carrier charge separation that allows for electronic transfer between the catalyst and the pollutants. In this work, zinc oxide n-type semiconductor vertically aligned structures were fabricated on silicon (100) substrates using the chemical bath deposition method. The as-synthesized structures were treated with nickel and sulphur. X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy were used to characterize the phase purity, structural dimensions and elemental composition of the obtained structures respectively. Photoluminescence emission measurements showed a decrease in both the near band edge emission as well as the defect band emission upon addition of nickel and sulphur with different concentrations. This was attributed to increased charger-carrier-separation due to the presence of Ni-S material on ZnO surface, which is linked to improved charge transfer during photocatalytic reactions.

Keywords: Carrier-charge-separation, nickel, sulphur, zinc oxide, photoluminescence.

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289 The Analysis of Radial/Axial Error Motion on a Precision Rotation Stage

Authors: Jinho Kim, Dongik Shin, Deokwon Yun, Changsoo Han

Abstract:

Rotating stages in semiconductor, display industry and many other fields require challenging accuracy to perform their functions properly. Especially, Axis of rotation error on rotary system is significant; such as the spindle error motion of the aligner, wire bonder and inspector machine which result in the poor state of manufactured goods. To evaluate and improve the performance of such precision rotary stage, unessential movements on the other 5 degrees of freedom of the rotary stage must be measured and analyzed. In this paper, we have measured the three translations and two tilt motions of a rotating stage with high precision capacitive sensors. To obtain the radial error motion from T.I.R (Total Indicated Reading) of radial direction, we have used Donaldson's reversal technique. And the axial components of the spindle tilt error motion can be obtained accurately from the axial direction outputs of sensors by Estler face motion reversal technique. Further more we have defined and measured the sensitivity of positioning error to the five error motions.

Keywords: Donaldson's reversal methods, Estler face motionreversal method, Error motion, sensitivity, T.I.R (Total IndicatedReading).

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288 Variable Input Range Continuous-time Switched Current Delta-sigma Analog Digital Converter for RFID CMOS Biosensor Applications

Authors: Boram Kim, Shigeyasu Uno, Kazuo Nakazato

Abstract:

Continuous-time delta-sigma analog digital converter (ADC) for radio frequency identification (RFID) complementary metal oxide semiconductor (CMOS) biosensor has been reported. This delta-sigma ADC is suitable for digital conversion of biosensor signal because of small process variation, and variable input range. As the input range of continuous-time switched current delta-sigma ADC (Dynamic range : 50 dB) can be limited by using current reference, amplification of biosensor signal is unnecessary. The input range is switched to wide input range mode or narrow input range mode by command of current reference. When the narrow input range mode, the input range becomes ± 0.8 V. The measured power consumption is 5 mW and chip area is 0.31 mm^2 using 1.2 um standard CMOS process. Additionally, automatic input range detecting system is proposed because of RFID biosensor applications.

Keywords: continuous time, delta sigma, A/D converter, RFID, biosensor, CMOS

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287 Image-Based UAV Vertical Distance and Velocity Estimation Algorithm during the Vertical Landing Phase Using Low-Resolution Images

Authors: Seyed-Yaser Nabavi-Chashmi, Davood Asadi, Karim Ahmadi, Eren Demir

Abstract:

The landing phase of a UAV is very critical as there are many uncertainties in this phase, which can easily entail a hard landing or even a crash. In this paper, the estimation of relative distance and velocity to the ground, as one of the most important processes during the landing phase, is studied. Using accurate measurement sensors as an alternative approach can be very expensive for sensors like LIDAR, or with a limited operational range, for sensors like ultrasonic sensors. Additionally, absolute positioning systems like GPS or IMU cannot provide distance to the ground independently. The focus of this paper is to determine whether we can measure the relative distance and velocity of UAV and ground in the landing phase using just low-resolution images taken by a monocular camera. The Lucas-Konda feature detection technique is employed to extract the most suitable feature in a series of images taken during the UAV landing. Two different approaches based on Extended Kalman Filters (EKF) have been proposed, and their performance in estimation of the relative distance and velocity are compared. The first approach uses the kinematics of the UAV as the process and the calculated optical flow as the measurement. On the other hand, the second approach uses the feature’s projection on the camera plane (pixel position) as the measurement while employing both the kinematics of the UAV and the dynamics of variation of projected point as the process to estimate both relative distance and relative velocity. To verify the results, a sequence of low-quality images taken by a camera that is moving on a specifically developed testbed has been used to compare the performance of the proposed algorithm. The case studies show that the quality of images results in considerable noise, which reduces the performance of the first approach. On the other hand, using the projected feature position is much less sensitive to the noise and estimates the distance and velocity with relatively high accuracy. This approach also can be used to predict the future projected feature position, which can drastically decrease the computational workload, as an important criterion for real-time applications.

Keywords: Automatic landing, multirotor, nonlinear control, parameters estimation, optical flow.

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286 Block Sorting: A New Characterization and a New Heuristic

Authors: Swapnoneel Roy, Ashok Kumar Thakur, Minhazur Rahman

Abstract:

The Block Sorting problem is to sort a given permutation moving blocks. A block is defined as a substring of the given permutation, which is also a substring of the identity permutation. Block Sorting has been proved to be NP-Hard. Until now two different 2-Approximation algorithms have been presented for block sorting. These are the best known algorithms for Block Sorting till date. In this work we present a different characterization of Block Sorting in terms of a transposition cycle graph. Then we suggest a heuristic, which we show to exhibit a 2-approximation performance guarantee for most permutations.

Keywords: Block Sorting, Optical Character Recognition, Genome Rearrangements, Sorting Primitives, ApproximationAlgorithms

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285 Trap Assisted Tunneling Model for Gate Current in Nano Scale MOSFET with High-K Gate Dielectrics

Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

This paper presents a new compact analytical model of the gate leakage current in high-k based nano scale MOSFET by assuming a two-step inelastic trap-assisted tunneling (ITAT) process as the conduction mechanism. This model is based on an inelastic trap-assisted tunneling (ITAT) mechanism combined with a semiempirical gate leakage current formulation in the BSIM 4 model. The gate tunneling currents have been calculated as a function of gate voltage for different gate dielectrics structures such as HfO2, Al2O3 and Si3N4 with EOT (equivalent oxide thickness) of 1.0 nm. The proposed model is compared and contrasted with santaurus simulation results to verify the accuracy of the model and excellent agreement is found between the analytical and simulated data. It is observed that proposed analytical model is suitable for different highk gate dielectrics simply by adjusting two fitting parameters. It was also shown that gate leakages reduced with the introduction of high-k gate dielectric in place of SiO2.

Keywords: Analytical model, High-k gate dielectrics, inelastic trap assisted tunneling, metal–oxide–semiconductor (MOS) devices.

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284 Topochemical Synthesis of Epitaxial Silicon Carbide on Silicon

Authors: Andrey V. Osipov, Sergey A. Kukushkin, Andrey V. Luk’yanov

Abstract:

A method is developed for the solid-phase synthesis of epitaxial layers when the substrate itself is involved into a topochemical reaction and the reaction product grows in the interior of substrate layer. It opens up new possibilities for the relaxation of the elastic energy due to the attraction of point defects formed during the topochemical reaction in anisotropic media. The presented method of silicon carbide (SiC) formation employs a topochemical reaction between the single-crystalline silicon (Si) substrate and gaseous carbon monoxide (CO). The corresponding theory of interaction of point dilatation centers in anisotropic crystals is developed. It is eliminated that the most advantageous location of the point defects is the direction (111) in crystals with cubic symmetry. The single-crystal SiC films with the thickness up to 200 nm have been grown on Si (111) substrates owing to the topochemical reaction with CO. Grown high-quality single-crystal SiC films do not contain misfit dislocations despite the huge lattice mismatch value of ~20%. Also the possibility of growing of thick wide-gap semiconductor films on these templates SiC/Si(111) and, accordingly, its integration into Si electronics, is demonstrated. Finally, the ab initio theory of SiC formation due to the topochemical reaction has been developed.

Keywords: Epitaxy, silicon carbide, topochemical reaction, wide-bandgap semiconductors.

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283 MIMO Radar-Based System for Structural Health Monitoring and Geophysical Applications

Authors: Davide D’Aria, Paolo Falcone, Luigi Maggi, Aldo Cero, Giovanni Amoroso

Abstract:

The paper presents a methodology for real-time structural health monitoring and geophysical applications. The key elements of the system are a high performance MIMO RADAR sensor, an optical camera and a dedicated set of software algorithms encompassing interferometry, tomography and photogrammetry. The MIMO Radar sensor proposed in this work, provides an extremely high sensitivity to displacements making the system able to react to tiny deformations (up to tens of microns) with a time scale which spans from milliseconds to hours. The MIMO feature of the system makes the system capable of providing a set of two-dimensional images of the observed scene, each mapped on the azimuth-range directions with noticeably resolution in both the dimensions and with an outstanding repetition rate. The back-scattered energy, which is distributed in the 3D space, is projected on a 2D plane, where each pixel has as coordinates the Line-Of-Sight distance and the cross-range azimuthal angle. At the same time, the high performing processing unit allows to sense the observed scene with remarkable refresh periods (up to milliseconds), thus opening the way for combined static and dynamic structural health monitoring. Thanks to the smart TX/RX antenna array layout, the MIMO data can be processed through a tomographic approach to reconstruct the three-dimensional map of the observed scene. This 3D point cloud is then accurately mapped on a 2D digital optical image through photogrammetric techniques, allowing for easy and straightforward interpretations of the measurements. Once the three-dimensional image is reconstructed, a 'repeat-pass' interferometric approach is exploited to provide the user of the system with high frequency three-dimensional motion/vibration estimation of each point of the reconstructed image. At this stage, the methodology leverages consolidated atmospheric correction algorithms to provide reliable displacement and vibration measurements.

Keywords: Interferometry, MIMO RADAR, SAR, tomography.

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282 Photodegradation of Optically Trapped Polystyrene Beads at 442 nm

Authors: V. Subramanyan Namboodiri, Sajan. D. George, Steffen Hardt

Abstract:

Polystyrene particles of different sizes are optically trapped with a gaussian beam from a He-Cd laser operating at 442 nm. The particles are observed to exhibit luminescence after a certain trapping time followed by an escape from the optical trap. The observed luminescence is explained in terms of the photodegradation of the polystyrene backbone. It is speculated that these chemical modifications also play a role for the escape of the particles from the trap. Variations of the particle size and the laser power show that these parameters have a great influence on the observed phenomena.

Keywords: Photodegradation, Polystyrene particles, Opticaltrapping

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