A Comparative Study on Optimized Bias Current Density Performance of Cubic ZnB-GaN with Hexagonal 4H-SiC Based Impatts
In this paper, a vivid simulated study has been made on 35 GHz Ka-band window frequency in order to judge and compare the DC and high frequency properties of cubic ZnB-GaN with the existing hexagonal 4H-SiC. A flat profile p+pnn+ DDR structure of impatt is chosen and is optimized at a particular bias current density with respect to efficiency and output power taking into consideration the effect of mobile space charge also. The simulated results obtained reveals the strong potentiality of impatts based on both cubic ZnB-GaN and hexagonal 4H-SiC. The DC-to-millimeter wave conversion efficiency for cubic ZnB-GaN impatt obtained is 50% with an estimated output power of 2.83 W at an optimized bias current density of 2.5×108 A/m2. The conversion efficiency and estimated output power in case of hexagonal 4H-SiC impatt obtained is 22.34% and 40 W respectively at an optimum bias current density of 0.06×108 A/m2.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1125343Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 905
 A.J. Gasiewski and M. Klein, ―The Sensitivity of Millimeter and sub-millimeter frequencies to atmospheric temperature and water vapour variations, Journal of Geophysical Research-Atmospheres, 13, pp.17481-17511, 2000.
 T.V. Omotosho and C.A. Oluwafemi, Impairment of Radio wave Signal by rainfall on fixed satellite service on Earth-Space path at 37 stations in Nigeria, Journal of Atmospheric and Solar-Terrestrial Physics, 71, pp. 830-840, 2009.
 K. Nakazawa, S. Tanaka and K. Shogen, ―A method to transform rainfall rate to rain attenuation and its application to 21GHz band satellite, IEICE Trans. On Commun., E91-B(6), pp. 1806-1811, 2008.
 S.K. Sarkar, ―Some studies on attenuation and atmospheric water vapour measurement in India, Int. J. Remote Sensing, 19(3), 473-480, 1998.
 Y. Maekawa, T. Fujiwara, Y. Shibagaki, T. Sato, M. Yamamoto, H. Hashiguchi and S. Fukao, ―Effects of tropical rainfall to the Ku-band satellite communication links at the equatorial atmosphere RADAR observatory, Journal of the Meteorological Society of Japan, 84A, 211-225, 2006.
 J.D. Gibson, Editor, The Communication Handbook, Second Edition, CRC Press, LCC.
 R. Bauer, ―Ka-band propagation measurement: An opportunity with Advanced Communications Technology Satellite (ACTS), Proceedings IEEE, 85, 853-862, 1997.
 M. Shur ―Terahertz Technology: Devices and Applications, Proc. ESSDERC, Grenoble, France, 2005.
 V.V. Buniatyan and V.M. Aroutioumian, ―Wide gap semiconductor microwave devices, J. Phys. D, Appl. Physics, 40(20), pp. 63555-6385, 2007.
 K.V.Vassileevski, A.V.Zorenko and K.Zekentes, ―Experimental observation of microwave oscillations produced by pulsed Silicon Carbide IMPATT diode, ELECTRONICS LETTERS., Vol.37, No.7, pp. 466-467, 2001
 L.Yuan, J.A.Cooper, Jr., K.J.Webb and M.R.Melloch, ―Experimental demonstration of a silicon carbide impatt oscillator, IEEE Electronic Devics Letters, Vol. 22, No. 6, pp. 266-268, June 2001.
 Konstatin Vassilevski, Alexander Zorenko, Konstantinos Zekentes, Katerina Tsagaraki, Edwige Bano, Christophe Banc and Alexander Lebedev, ―4H-SiC IMPATT Diode Fabrication and Testing, pp. 713, 2001, Technical Digest of International Conference on SiC and Related Materials – ICSCRM2001, Tsukuba, Japan, 2001.
 Luo Yuan, James A. Cooper, Kevin J. Webb and Michael R. Melloch, ―Demonstration of IMPATT Diodes Oscillators in 4H-SiC,Technical Digest of International Conference on SiC and Related Materials – ICSCRM 2001, Tsukuba, Japan, 2001, pp. 723.
 M. Bhatnagar and B.J. Baliya, ―Comparison of 6H-SiC, 3C-SiC and Si for power devices, IEEE Trans. On Electronic Devices, Vol. 40, No. 3, pp. 645-655, March 1993.
 R. Madar, ―Silicon Carbide in contention, Nature, 430, pp. 1009-1012,2006.
 R. Yakimova and E. Janzen, ―Current status in the growth of SiC, Diamond and Related materials, 9(3-6), pp. 432-438, 2000.
 I.A. Khan and J.A. Cooper, ―Measurement of high field electron transport in silicon carbide, IEEE Trans. on Electronic Devices, Vol. 47, No. 2, 2000.
 S. Ono, M. Arai and C. Kimura, ―Demonstration of High power X-band oscillation in p+nn+ 4H-SiC impatt diodes with guard ring termination, Materials Science Forum, 981-4, pp. 483-485, 2005.
 J. H. Zhao, Monte Carlo simulation of 4H-SiC impatt diode, Semicond. Sci. & Technol., 15, pp. 1093-1100, 2000.
 K.J.Lee ,Growth of High quality GaN epilayers with SixNy inserting layer on Si <111> substrate, Journal of the Korean Physical Society, Vol-45., pp-S756-S759,2004.
 Soumen Banerjee, Riya Chkrabarti and Riya Baidya, ―Bias current optimization study on avalanche transit time diode based on Wurtzite and ZnB phase of GaN at THz frequency, Int. J. of Advanced Science & Technology, 28, 35-44, 2011.
 Soumen Banerjee, ―Dynamic characteristics of IMPATT diodes based on wide band gap and narrow band gap semiconductors at W-band‖, Int. J. of Engineering Science & Technology, 3(3), 2149-2159, 2011.
 M.Mukherjee, Soumen Banerjee and J.P. Banerjee, ―Dynamic characteristics of III-V and IV-IV semiconductor based transit time device in the THz range regime: A comparative analysis, Int. J. of Terahertz Science and Technology, 3(3), 97-109, 2010.
 M.Mukherjee, Nilratan Majumdar and S.K. Roy, ―Photosensitivity analysis of GaN and SiC Terahertz IMPATT Oscillator: Comparison of theoretical reliability and study on experimental feasibility. IEEE Trans. On Device and Material Reliability, 3(8), 608-620, 2008.
 A.K. Panda, D. Pavlidis and E. Alekscev, ―DC and high frequency char. of GaN based IMPATTS, IEEE Trans. on Electron Devices, 4(48), 2001.
 A.K. Panda, D. Pavlidis and E. Alekscev, ―Noise characteristics of GaN based IMPATTS, IEEE Trans. on Electron Devices, 7(48), 2001.
 Soumen Banerjee, Priya Chakrabarti and Riya Baidya, ―Effect of bump width on the efficiency of high-low 4H-SiC impatt at Ka-band window frequency, Int. Journal of engineering science and technology, Vol. 2, Issue 10, pp. 5657-5661, October 2010.
 M.Mkherjee, Soumen Banerjee and J.P Banerjee, ― MM-wave performance of DDR impatts based an cubic SiC, Proc.of XVth International Workshop on the Physics of Semiconductor Devices (IWPSD), pp. 533-536, SSPL & Jamia Millia Islamia, New Delhi, 2009.
 M. Mukherjee, ―Prospects of α-SiC and β-SiC based p+pnn+ impatt devices as sub-mm wave high power sources‖, Proc. of International Conference on Microwave, pp. 34-37, Jaipur, India, 2008.
 Soumen Banerjee and J.P. Banerjee, ―Effect of punch through factor on the breakdown characteristics of 4H-SiC impatt diode, Proc. of IEEE-MTTs International Conference on Recent Advances in Microwave theory and Applications (Microwave-08), pp. 59-62, 2008, Jaipur, India.
 S. Mukhopadhyay, Soumen Banerjee, J. Mukhopadhyay and J.P. Banerjee, ―Mobile Space charge effect in 4H-SiC impatt diode, Proc. of XIVth International Workshop on the Physics of Semiconductor Devices (IWPSD), TIFR & IIT Bombay, pp. 268-272, Mumbai, India, 2007.
 S.M. Sze and R.M. Ryder, ―Microwave Avalanche diodes, Proc. IEEE, Special Issue on Microwave Semiconductor Devices, 1971.
 Electronic Archive: http://www.ioffe.rulSBA/NSM/Semicond/GaN.
 L. Scherfetter and H.K. Gummel, ―Large signal analysis of a silicon read diode oscillator‖, IEEE Trans. on Electron Devices, 1(6), 1969.
 H.K. Gummel and J.L. Blue, ―A small signal theory of Avalanche Noise in IMPATT Diodes‖, IEEE Trans. on Electron Devices, 14, 562, 1967.