F. Salehuddin and  I. Ahmad and  F. A. Hamid and  A. Zaharim and  H. A. Elgomati and  B. Y. Majlis and  P. R. Apte,  Optimization of HALO Structure Effects in 45nm p-type MOSFETs Device Using Taguchi Method.   journal   = {International Journal of Electronics and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology.
    March 2011, vol. 51(3). 296 - 302
    [viewed 04 May 2024]. Available from: https://publications.waset.org/pdf/7264.