Search results for: optimized bias current density
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 4085

Search results for: optimized bias current density

4085 A Comparative Study on Optimized Bias Current Density Performance of Cubic ZnB-GaN with Hexagonal 4H-SiC Based Impatts

Authors: Arnab Majumdar, Srimani Sen

Abstract:

In this paper, a vivid simulated study has been made on 35 GHz Ka-band window frequency in order to judge and compare the DC and high frequency properties of cubic ZnB-GaN with the existing hexagonal 4H-SiC. A flat profile p+pnn+ DDR structure of impatt is chosen and is optimized at a particular bias current density with respect to efficiency and output power taking into consideration the effect of mobile space charge also. The simulated results obtained reveals the strong potentiality of impatts based on both cubic ZnB-GaN and hexagonal 4H-SiC. The DC-to-millimeter wave conversion efficiency for cubic ZnB-GaN impatt obtained is 50% with an estimated output power of 2.83 W at an optimized bias current density of 2.5×108 A/m2. The conversion efficiency and estimated output power in case of hexagonal 4H-SiC impatt obtained is 22.34% and 40 W respectively at an optimum bias current density of 0.06×108 A/m2.

Keywords: Cubic ZnB-GaN, hexagonal 4H-SiC, Double drift impatt diode, millimeter wave, optimized bias current density, wide band gap semiconductor.

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4084 Improved Small-Signal Characteristics of Infrared 850 nm Top-Emitting Vertical-Cavity Lasers

Authors: Ahmad Al-Omari, Osama Khreis, Ahmad M. K. Dagamseh, Abdullah Ababneh, Kevin Lear

Abstract:

High-speed infrared vertical-cavity surface-emitting laser diodes (VCSELs) with Cu-plated heat sinks were fabricated and tested. VCSELs with 10 mm aperture diameter and 4 mm of electroplated copper demonstrated a -3dB modulation bandwidth (f-3dB) of 14 GHz and a resonance frequency (fR) of 9.5 GHz at a bias current density (Jbias) of only 4.3 kA/cm2, which corresponds to an improved f-3dB2/Jbias ratio of 44 GHz2/kA/cm2. At higher and lower bias current densities, the f-3dB2/ Jbias ratio decreased to about 30 GHz2/kA/cm2 and 18 GHz2/kA/cm2, respectively. Examination of the analogue modulation response demonstrated that the presented VCSELs displayed a steady f-3dB/ fR ratio of 1.41±10% over the whole range of the bias current (1.3Ith to 6.2Ith). The devices also demonstrated a maximum modulation bandwidth (f-3dB max) of more than 16 GHz at a bias current less than the industrial bias current standard for reliability by 25%.

Keywords: Current density, High-speed VCSELs, Modulation bandwidth, Small-Signal Characteristics, Thermal impedance, Vertical-cavity surface-emitting lasers.

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4083 Design of 900 MHz High Gain SiGe Power Amplifier with Linearity Improved Bias Circuit

Authors: Guiheng Zhang, Wei Zhang, Jun Fu, Yudong Wang

Abstract:

A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Volterra Series is applied to analyze nonlinearity sources of SiGe HBT device model clearly. Meanwhile, the influence of operating current to IMD3 is discussed. Then a β-helper current mirror bias circuit is applied to improve linearity, since the β-helper current mirror bias circuit can offer stable base biasing voltage. Meanwhile, it can also work as predistortion circuit when biasing voltages of three bias circuits are fine-tuned, by this way, the power gain and operating current of PA are optimized for best linearity. The three power stages which fabricated by 0.18 μm SiGe technology are bonded to the printed circuit board (PCB) to obtain impedances by Load-Pull system, then matching networks are done for best linearity with discrete passive components on PCB. The final measured three-stage PA exhibits 21.1 dBm of output power at 1 dB compression point (OP1dB) with power added efficiency (PAE) of 20.6% and 33 dB power gain under 3.3 V power supply voltage.

Keywords: High gain power amplifier, linearization bias circuit, SiGe HBT model, Volterra Series.

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4082 The Effects of Applied Negative Bias Voltage on Structure and Optical Properties of α-C:H Films

Authors: X. L. Zhou, S. Tunmee, I. Toda, K. Komatsu, S. Ohshio, H. Saitoh

Abstract:

Hydrogenated amorphous carbon (a-C:H) films have been synthesized by a radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) technique with different bias voltage from 0.0 to -0.5 kV. The Raman spectra displayed the polymer-like hydrogenated amorphous carbon (PLCH) film with 0.0 to -0.1 and a-C:H films with -0.2 to -0.5 kV of bias voltages. The surface chemical information of all films were studied by X-ray photoelectron spectroscopy (XPS) technique, presented to C-C (sp2 and sp3) and C-O bonds, and relative carbon (C) and oxygen (O) atomics contents. The O contamination had affected on structure and optical properties. The true density of PLCH and a-C:H films were characterized by X-ray refractivity (XRR) method, showed the result as in the range of 1.16-1.73 g/cm3 that depending on an increasing of bias voltage. The hardness was proportional to the true density of films. In addition, the optical properties i.e. refractive index (n) and extinction coefficient (k) of these films were determined by a spectroscopic ellipsometry (SE) method that give formation to in 1.62-2.10 (n) and 0.04-0.15 (k) respectively. These results indicated that the optical properties confirmed the Raman results as presenting the structure changed with applied bias voltage increased.

Keywords: Negative bias voltage, a-C:H film, Oxygen contamination, Optical properties.

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4081 Effect of Current Density, Temperature and Pressure on Proton Exchange Membrane Electrolyser Stack

Authors: Na Li, Samuel Simon Araya, Søren Knudsen Kær

Abstract:

This study investigates the effects of operating parameters of different current density, temperature and pressure on the performance of a proton exchange membrane (PEM) water electrolysis stack. A 7-cell PEM water electrolysis stack was assembled and tested under different operation modules. The voltage change and polarization curves under different test conditions, namely current density, temperature and pressure, were recorded. Results show that higher temperature has positive effect on overall stack performance, where temperature of 80 ℃ improved the cell performance greatly. However, the cathode pressure and current density has little effect on stack performance.

Keywords: PEM electrolysis stack, current density, temperature, pressure.

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4080 Quantifying and Adjusting the Effects of Publication Bias in Continuous Meta-Analysis

Authors: N.R.N. Idris

Abstract:

This study uses simulated meta-analysis to assess the effects of publication bias on meta-analysis estimates and to evaluate the efficacy of the trim and fill method in adjusting for these biases. The estimated effect sizes and the standard error were evaluated in terms of the statistical bias and the coverage probability. The results demonstrate that if publication bias is not adjusted it could lead to up to 40% bias in the treatment effect estimates. Utilization of the trim and fill method could reduce the bias in the overall estimate by more than half. The method is optimum in presence of moderate underlying bias but has minimal effects in presence of low and severe publication bias. Additionally, the trim and fill method improves the coverage probability by more than half when subjected to the same level of publication bias as those of the unadjusted data. The method however tends to produce false positive results and will incorrectly adjust the data for publication bias up to 45 % of the time. Nonetheless, the bias introduced into the estimates due to this adjustment is minimal

Keywords: Publication bias, Trim and Fill method, percentage relative bias, coverage probability

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4079 High-performance Second-Generation Controlled Current Conveyor CCCII and High Frequency Applications

Authors: Néjib Hassen, Thouraya Ettaghzouti, Kamel Besbes

Abstract:

In this paper, a modified CCCII is presented. We have used a current mirror with low supply voltage. This circuit is operated at low supply voltage of ±1V. Tspice simulations for TSMC 0.18μm CMOS Technology has shown that the current and voltage bandwidth are respectively 3.34GHz and 4.37GHz, and parasitic resistance at port X has a value of 169.320 for a control current of 120μA. In order to realize this circuit, we have implemented in this first step a universal current mode filter where the frequency can reach the 134.58MHz. In the second step, we have implemented two simulated inductors: one floating and the other grounded. These two inductors are operated in high frequency and variable depending on bias current I0. Finally, we have used the two last inductors respectively to implement two sinusoidal oscillators domains of frequencies respectively: [470MHz, 692MHz], and [358MHz, 572MHz] for bias currents I0 [80μA, 350μA].

Keywords: Current controlled current conveyor CCCII, floating inductor, grounded inductor, oscillator, universal filter.

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4078 The Photon-Drag Effect in Cylindrical Quantum Wire with a Parabolic Potential

Authors: Hoang Van Ngoc, Nguyen Thu Huong, Nguyen Quang Bau

Abstract:

Using the quantum kinetic equation for electrons interacting with acoustic phonon, the density of the constant current associated with the drag of charge carriers in cylindrical quantum wire by a linearly polarized electromagnetic wave, a DC electric field and a laser radiation field is calculated. The density of the constant current is studied as a function of the frequency of electromagnetic wave, as well as the frequency of laser field and the basic elements of quantum wire with a parabolic potential. The analytic expression of the constant current density is numerically evaluated and plotted for a specific quantum wires GaAs/AlGaAs to show the dependence of the constant current density on above parameters. All these results of quantum wire compared with bulk semiconductors and superlattices to show the difference.

Keywords: Photon-drag effect, constant current density, quantum wire, parabolic potential.

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4077 Detection of Bias in GPS satellites- Measurements for Enhanced Measurement Integrity

Authors: Mamoun F. Abdel-Hafez

Abstract:

In this paper, the detection of a fault in the Global Positioning System (GPS) measurement is addressed. The class of faults considered is a bias in the GPS pseudorange measurements. This bias is modeled as an unknown constant. The fault could be the result of a receiver fault or signal fault such as multipath error. A bias bank is constructed based on set of possible fault hypotheses. Initially, there is equal probability of occurrence for any of the biases in the bank. Subsequently, as the measurements are processed, the probability of occurrence for each of the biases is sequentially updated. The fault with a probability approaching unity will be declared as the current fault in the GPS measurement. The residual formed from the GPS and Inertial Measurement Unit (IMU) measurements is used to update the probability of each fault. Results will be presented to show the performance of the presented algorithm.

Keywords: Estimation and filtering, Statistical data analysis, Faultdetection and identification.

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4076 Analytical Modeling of Channel Noise for Gate Material Engineered Surrounded/Cylindrical Gate (SGT/CGT) MOSFET

Authors: Pujarini Ghosh A, Rishu Chaujar B, Subhasis Haldar C, R.S Gupta D, Mridula Gupta E

Abstract:

In this paper, an analytical modeling is presentated to describe the channel noise in GME SGT/CGT MOSFET, based on explicit functions of MOSFETs geometry and biasing conditions for all channel length down to deep submicron and is verified with the experimental data. Results shows the impact of various parameters such as gate bias, drain bias, channel length ,device diameter and gate material work function difference on drain current noise spectral density of the device reflecting its applicability for circuit design applications.

Keywords: Cylindrical/Surrounded gate (SGT/CGT) MOSFET, Gate Material Engineering (GME), Spectral Noise and short channeleffect (SCE).

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4075 Heating of High-Density Hydrogen by High- Current Arc Radiation

Authors: A. V. Budin, Ph. G. Rutberg, M. E. Pinchuk, A. A. Bogomaz, V. Yu. Svetova

Abstract:

The investigation results of high-density hydrogen heating by high-current electric arc are presented at initial pressure from 5 MPa to 160 MPa with current amplitude up to 1.6 MA and current rate of rise 109-1011 A/s. When changing the initial pressure and current rate of rise, channel temperature varies from several electronvolts to hundreds electronvolts. Arc channel radius is several millimeters. But the radius of the discharge chamber greater than the radius of the arc channel on approximately order of magnitude. High efficiency of gas heating is caused by radiation absorption of hydrogen surrounding the arc. Current channel consist from vapor of the initiating wire. At current rate of rise of 109 A/s and relatively small current amplitude gas heating occurs due to radiation absorption in the band transparency of hydrogen by the wire vapours with photon energies less than 13.6 eV. At current rate of rise of 1011 A/s gas heating is due to hydrogen absorption of soft X-rays from discharge channel.

Keywords: High-density hydrogen heating by high-current electric arc.

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4074 Current Distribution and Cathode Flooding Prediction in a PEM Fuel Cell

Authors: A. Jamekhorshid, G. Karimi, I. Noshadi, A. Jahangiri

Abstract:

Non-uniform current distribution in polymer electrolyte membrane fuel cells results in local over-heating, accelerated ageing, and lower power output than expected. This issue is very critical when fuel cell experiences water flooding. In this work, the performance of a PEM fuel cell is investigated under cathode flooding conditions. Two-dimensional partially flooded GDL models based on the conservation laws and electrochemical relations are proposed to study local current density distributions along flow fields over a wide range of cell operating conditions. The model results show a direct association between cathode inlet humidity increases and that of average current density but the system becomes more sensitive to flooding. The anode inlet relative humidity shows a similar effect. Operating the cell at higher temperatures would lead to higher average current densities and the chance of system being flooded is reduced. In addition, higher cathode stoichiometries prevent system flooding but the average current density remains almost constant. The higher anode stoichiometry leads to higher average current density and higher sensitivity to cathode flooding.

Keywords: Current distribution, Flooding, Hydrogen energysystem, PEM fuel cell.

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4073 Highly Optimized Novel High Speed Low Power Barrel Shifter at 22nm Hi K Metal Gate Strained Si Technology Node

Authors: Shobha Sharma, Amita Dev

Abstract:

This research paper presents highly optimized barrel shifter at 22nm Hi K metal gate strained Si technology node. This barrel shifter is having a unique combination of static and dynamic body bias which gives lowest power delay product. This power delay product is compared with the same circuit at same technology node with static forward biasing at ‘supply/2’ and also with normal reverse substrate biasing and still found to be the lowest. The power delay product of this barrel sifter is .39362X10-17J and is lowered by approximately 78% to reference proposed barrel shifter at 32nm bulk CMOS technology. Power delay product of barrel shifter at 22nm Hi K Metal gate technology with normal reverse substrate bias is 2.97186933X10-17J and can be compared with this design’s PDP of .39362X10-17J. This design uses both static and dynamic substrate biasing and also has approximately 96% lower power delay product compared to only forward body biased at half of supply voltage. The NMOS model used are predictive technology models of Arizona state university and the simulations to be carried out using HSPICE simulator.

Keywords: Dynamic body biasing, highly optimized barrel shifter, PDP, Static body biasing.

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4072 Bias Stability of a-IGZO TFT and a new Shift-Register Design Suitable for a-IGZO TFT

Authors: Young Wook Lee, Sun-Jae Kim, Soo-Yeon Lee, Moon-Kyu Song, Woo-Geun Lee Min-Koo Han

Abstract:

We have fabricated a-IGZO TFT and investigated the stability under positive DC and AC bias stress. The threshold voltage of a-IGZO TFT shifts positively under those biases, and that reduces on-current. For this reason, conventional shift-register circuit employing TFTs which stressed by positive bias will be unstable, may do not work properly. We have designed a new 6-transistor shift-register, which has less transistors than prior circuits. The TFTs of the proposed shift-register are not suffering from positive DC or AC stress, mainly kept unbiased. Despite the compact design, the stable output signal was verified through the SPICE simulation even under RC delay of clock signal.

Keywords: Indium Gallium Zinc Oxide (IGZO), Thin FilmTransistor (TFT), shift-register

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4071 Realization of Electronically Controllable Current-mode Square-rooting Circuit Based on MO-CFTA

Authors: P. Silapan, C. Chanapromma, T. Worachak

Abstract:

This article proposes a current-mode square-rooting circuit using current follower transconductance amplifier (CTFA). The amplitude of the output current can be electronically controlled via input bias current with wide input dynamic range. The proposed circuit consists of only single CFTA. Without any matching conditions and external passive elements, the circuit is then appropriate for an IC architecture. The magnitude of the output signal is temperature-insensitive. The PSpice simulation results are depicted, and the given results agree well with the theoretical anticipation. The power consumption is approximately 1.96mW at ±1.5V supply voltages.

Keywords: CFTA, Current-mode, Square-rooting Circuit

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4070 A Comparison of Bias Among Relaxed Divisor Methods Using 3 Bias Measurements

Authors: Sumachaya Harnsukworapanich, Tetsuo Ichimori

Abstract:

The apportionment method is used by many countries, to calculate the distribution of seats in political bodies. For example, this method is used in the United States (U.S.) to distribute house seats proportionally based on the population of the electoral district. Famous apportionment methods include the divisor methods called the Adams Method, Dean Method, Hill Method, Jefferson Method and Webster Method. Sometimes the results from the implementation of these divisor methods are unfair and include errors. Therefore, it is important to examine the optimization of this method by using a bias measurement to figure out precise and fair results. In this research we investigate the bias of divisor methods in the U.S. Houses of Representatives toward large and small states by applying the Stolarsky Mean Method. We compare the bias of the apportionment method by using two famous bias measurements: the Balinski and Young measurement and the Ernst measurement. Both measurements have a formula for large and small states. The Third measurement however, which was created by the researchers, did not factor in the element of large and small states into the formula. All three measurements are compared and the results show that our measurement produces similar results to the other two famous measurements.

Keywords: Apportionment, Bias, Divisor, Fair, Simulation

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4069 Realization of Electronically Tunable Currentmode First-order Allpass Filter and Its Application

Authors: Supayotin Na Songkla, Winai Jaikla

Abstract:

This article presents a resistorless current-mode firstorder allpass filter based on second generation current controlled current conveyors (CCCIIs). The features of the circuit are that: the pole frequency can be electronically controlled via the input bias current: the circuit description is very simple, consisting of 2 CCCIIs and single grounded capacitor, without any external resistors and component matching requirements. Consequently, the proposed circuit is very appropriate to further develop into an integrated circuit. Low input and high output impedances of the proposed configuration enable the circuit to be cascaded in current-mode without additional current buffers. The PSpice simulation results are depicted. The given results agree well with the theoretical anticipation. The application example as a current-mode quadrature oscillator is included.

Keywords: First-order all pass filter, current-mode, CCCII.

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4068 How Herding Bias Could be Derived from Individual Investor Types and Risk Tolerance?

Authors: Huei-Wen Lin

Abstract:

This paper is to clarify the relationship of individual investor types, risk tolerance and herding bias. The questionnaire survey investigation is conducted to collect 389 valid and voluntary individual investors and to examine how the risk tolerance plays as a mediator between four types of personality and herding bias. Based on featuring BB&K model and reviewing the prior literature of psychology, a linear structural model are constructed and further used to evaluate the path of herding formation through the analysis of Structural Equation Modeling (SEM). The results showed that more impetuous investors would be prone to herding bias directly, but rather exhibit higher risk tolerance. However, risk tolerance would fully mediate between the level of confidence (i.e., confident or anxious) and herding bias, but not mediate between the method of action (careful or impetuous) for individual investors.

Keywords: Herding, investor types, risk tolerance.

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4067 Enhancement of Pulsed Eddy Current Response Based on Power Spectral Density after Continuous Wavelet Transform Decomposition

Authors: A. Benyahia, M. Zergoug, M. Amir, M. Fodil

Abstract:

The main objective of this work is to enhance the Pulsed Eddy Current (PEC) response from the aluminum structure using signal processing. Cracks and metal loss in different structures cause changes in PEC response measurements. In this paper, time-frequency analysis is used to represent PEC response, which generates a large quantity of data and reduce the noise due to measurement. Power Spectral Density (PSD) after Wavelet Decomposition (PSD-WD) is proposed for defect detection. The experimental results demonstrate that the cracks in the surface can be extracted satisfactorily by the proposed methods. The validity of the proposed method is discussed.

Keywords: NDT, pulsed eddy current, continuous wavelet transform, Mexican hat wavelet mother, defect detection, power spectral density.

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4066 Characterization of Pure Nickel Coatings Fabricated under Pulse Current Conditions

Authors: M. Sajjadnejad, H. Omidvar, M. Javanbakht, A. Mozafari

Abstract:

Pure nickel coatings have been successfully electrodeposited on copper substrates by the pulse plating technique. The influence of current density, duty cycle and pulse frequency on the surface morphology, crystal orientation, and microhardness was determined. It was found that the crystallite size of the deposit increases with increasing current density and duty cycle. The crystal orientation progressively changed from a random texture at 1 A/dm2 to (200) texture at 10 A/dm2. Increasing pulse frequency resulted in increased texture coefficient and peak intensity of (111) reflection. An increase in duty cycle resulted in considerable increase in texture coefficient and peak intensity of (311) reflection. Coatings obtained at high current densities and duty cycle present a mixed morphology of small and large grains. Maximum microhardness of 193 Hv was achieved at 4 A/dm2, 10 Hz and duty cycle of 50%. Nickel coatings with (200) texture are ductile while (111) texture improves the microhardness of the coatings.

Keywords: Current density, Duty cycle, Microstructure, Nickel, Pulse frequency.

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4065 Estimation of Uncertainty of Thermal Conductivity Measurement with Single Laboratory Validation Approach

Authors: Saowaluck Ukrisdawithid

Abstract:

The thermal conductivity of thermal insulation materials are measured by Heat Flow Meter (HFM) apparatus. The components of uncertainty are complex and difficult on routine measurement by modelling approach. In this study, uncertainty of thermal conductivity measurement was estimated by single laboratory validation approach. The within-laboratory reproducibility was 1.1%. The standard uncertainty of method and laboratory bias by using SRM1453 expanded polystyrene board was dominant at 1.4%. However, it was assessed that there was no significant bias. For sample measurement, the sources of uncertainty were repeatability, density of sample and thermal conductivity resolution of HFM. From this approach to sample measurements, the combined uncertainty was calculated. In summary, the thermal conductivity of sample, polystyrene foam, was reported as 0.03367 W/m·K ± 3.5% (k = 2) at mean temperature 23.5 °C. The single laboratory validation approach is simple key of routine testing laboratory for estimation uncertainty of thermal conductivity measurement by using HFM, according to ISO/IEC 17025-2017 requirements. These are meaningful for laboratory competent improvement, quality control on products, and conformity assessment.

Keywords: Single laboratory validation approach, within-laboratory reproducibility, method and laboratory bias, certified reference material.

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4064 The Mechanical and Electrochemical Properties of DC-Electrodeposited Ni-Mn Alloy Coating with Low Internal Stress

Authors: Chun-Ying Lee, Kuan-Hui Cheng, Mei-Wen Wu

Abstract:

The nickel-manganese (Ni-Mn) alloy coating prepared from DC electrodeposition process in sulphamate bath was studied. The effects of process parameters, such as current density and electrolyte composition, on the cathodic current efficiency, microstructure, internal stress and mechanical properties were investigated. Because of its crucial effect on the application to the electroforming of microelectronic components, the development of low internal stress coating with high leveling power was emphasized. It was found that both the coating’s manganese content and the cathodic current efficiency increased with the raise in current density. In addition, the internal stress of the deposited coating showed compressive nature at low current densities while changed to tensile one at higher current densities. Moreover, the metallographic observation, X-ray diffraction measurement, and polarization curve measurement were conducted. It was found that the Ni-Mn coating consisted of nano-sized columnar grains and the maximum hardness of the coating was associated with (111) preferred orientation in the microstructure. The grain size was refined along with the increase in the manganese content of the coating, which accordingly, raised its hardness and resistance to annealing softening. In summary, the Ni-Mn coating prepared at lower current density of 1-2 A/dm2 had low internal stress, high leveling power, and better corrosion resistance.

Keywords: DC plating, internal stress, leveling power, Ni-Mn coating.

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4063 Energetic Considerations for Sputter Deposition Processes

Authors: Dirk Hegemann, Martin Amberg

Abstract:

Sputter deposition processes, especially for sputtering from metal targets, are well investigated. For practical reasons, i.e. for industrial processes, energetic considerations for sputter deposition are useful in order to optimize the sputtering process. In particular, for substrates at floating conditions it is required to obtain energetic conditions during film growth that enables sufficient dense metal films of good quality. The influence of ion energies, energy density and momentum transfer is thus examined both for sputtering at the target as well as during film growth. Different regimes dominated by ion energy, energy density and momentum transfer were identified by using different plasma sources and by varying power input, pressure and bias voltage.

Keywords: Energy density, film growth, momentum transfer, sputtering.

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4062 Density Functional Calculations of 27Al, 11B,and 14N and NQR Parameters in the (6, 0) BN_AlN Nanotube Junction

Authors: Morteza Farahani, Ahmad Seif, Asadallah Boshra, Hossein Aghaie

Abstract:

Density functional theory (DFT) calculations were performed to calculate aluminum-27, boron-11, and nitrogen-14 quadrupole coupling constant (CQ) in the representative considered model of (6, 0) boron nitride-aluminum nitride nanotube junction (BN-AlNNT) for the first time. To this aim, 1.3 nm length of BNAlN consisting of 18 Al, 18 B, and 36 N atoms was selected where the end atoms capped by hydrogen atoms. The calculated CQ values for optimized BN-AlNNT system reveal different electrostatic environment in the mentioned system. The calculations were performed using the Gaussian 98 package of program.

Keywords: Nanotube Junction, Density functional, Nuclear Quadrupole Resonance.

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4061 The Aspect of the Human Bias in Decision Making within Quality Management Systems & LEAN Theory

Authors: Adriana Ávila Zúñiga Nordfjeld

Abstract:

This paper provides a literature review to document the state of the art with respect to handling “human bias” in decision making within the established quality management systems (QMS) and LEAN theory, in the context of shipbuilding. Previous research shows that in shipbuilding there is a huge deviation from the planned man-hours under the project management to the actual man-hours used because of errors in planning and reworks caused by human bias in the information flows, among others. This reduces the efficiency, and increases operational costs. Thus, the research question is how QMS and LEAN handle biases. The findings show the gap in studying the integration of methods to handle human bias in decision making into QMS and lean, not only within shipbuilding, but in general. Theoretical and practical implications are discussed for researchers and practitioners in the areas of decision making, QMS and LEAN, and future research is suggested.

Keywords: Human bias, decision making, LEAN Shipbuilding, quality management systems.

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4060 A Floating Gate MOSFET Based Novel Programmable Current Reference

Authors: V. Suresh Babu, Haseena P. S., Varun P. Gopi, M. R. Baiju

Abstract:

In this paper a scheme is proposed for generating a programmable current reference which can be implemented in the CMOS technology. The current can be varied over a wide range by changing an external voltage applied to one of the control gates of FGMOS (Floating Gate MOSFET). For a range of supply voltages and temperature, CMOS current reference is found to be dependent, this dependence is compensated by subtracting two current outputs with the same dependencies on the supply voltage and temperature. The system performance is found to improve with the use of FGMOS. Mathematical analysis of the proposed circuit is done to establish supply voltage and temperature independence. Simulation and performance evaluation of the proposed current reference circuit is done using TANNER EDA Tools. The current reference shows the supply and temperature dependencies of 520 ppm/V and 312 ppm/oC, respectively. The proposed current reference can operate down to 0.9 V supply.

Keywords: Floating Gate MOSFET, current reference, self bias scheme, temperature independency, supply voltage independency.

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4059 Metrology-Inspired Methods to Assess the Biases of Artificial Intelligence Systems

Authors: Belkacem Laimouche

Abstract:

With the field of Artificial Intelligence (AI) experiencing exponential growth, fueled by technological advancements that pave the way for increasingly innovative and promising applications, there is an escalating need to develop rigorous methods for assessing their performance in pursuit of transparency and equity. This article proposes a metrology-inspired statistical framework for evaluating bias and explainability in AI systems. Drawing from the principles of metrology, we propose a pioneering approach, using a concrete example, to evaluate the accuracy and precision of AI models, as well as to quantify the sources of measurement uncertainty that can lead to bias in their predictions. Furthermore, we explore a statistical approach for evaluating the explainability of AI systems based on their ability to provide interpretable and transparent explanations of their predictions.

Keywords: Artificial intelligence, metrology, measurement uncertainty, prediction error, bias, machine learning algorithms, probabilistic models, inter-laboratory comparison, data analysis, data reliability, bias impact assessment, bias measurement.

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4058 Off-State Leakage Power Reduction by Automatic Monitoring and Control System

Authors: S. Abdollahi Pour, M. Saneei

Abstract:

This paper propose a new circuit design which monitor total leakage current during standby mode and generates the optimal reverse body bias voltage, by using the adaptive body bias (ABB) technique to compensate die-to-die parameter variations. Design details of power monitor are examined using simulation framework in 65nm and 32nm BTPM model CMOS process. Experimental results show the overhead of proposed circuit in terms of its power consumption is about 10 μW for 32nm technology and about 12 μW for 65nm technology at the same power supply voltage as the core power supply. Moreover the results show that our proposed circuit design is not far sensitive to the temperature variations and also process variations. Besides, uses the simple blocks which offer good sensitivity, high speed, the continuously feedback loop.

Keywords: leakage current, leakage power monitor, body biasing, low power

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4057 Bit Error Rate Monitoring for Automatic Bias Control of Quadrature Amplitude Modulators

Authors: Naji Ali Albakay, Abdulrahman Alothaim, Isa Barshushi

Abstract:

The most common quadrature amplitude modulator (QAM) applies two Mach-Zehnder Modulators (MZM) and one phase shifter to generate high order modulation format. The bias of MZM changes over time due to temperature, vibration, and aging factors. The change in the biasing causes distortion to the generated QAM signal which leads to deterioration of bit error rate (BER) performance. Therefore, it is critical to be able to lock MZM’s Q point to the required operating point for good performance. We propose a technique for automatic bias control (ABC) of QAM transmitter using BER measurements and gradient descent optimization algorithm. The proposed technique is attractive because it uses the pertinent metric, BER, which compensates for bias drifting independently from other system variations such as laser source output power. The proposed scheme performance and its operating principles are simulated using OptiSystem simulation software for 4-QAM and 16-QAM transmitters.

Keywords: Automatic bias control, optical fiber communication, optical modulation, optical devices.

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4056 The Influence of Substrate Bias on the Mechanical Properties of a W- and S-containing DLC-based Solid-lubricant Film

Authors: Guojia Ma, Guoqiang Lin, Shuili Gong, Gang Sun, Dawang Wang

Abstract:

A diamond-like carbon (DLC) based solid-lubricant film was designed and DLC films were successfully prepared using a microwave plasma enhanced magnetron sputtering deposition technology. Post-test characterizations including Raman spectrometry, X-ray diffraction, nano-indentation test, adhesion test, friction coefficient test were performed to study the influence of substrate bias voltage on the mechanical properties of the W- and S-doped DLC films. The results indicated that the W- and S-doped DLC films also had the typical structure of DLC films and a better mechanical performance achieved by the application of a substrate bias of -200V.

Keywords: Adhesive Strength, Coefficient of Friction, Substrate Bias, W- and S-doped DLC film

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