Search results for: Low Power Crypto Circuit
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 3301

Search results for: Low Power Crypto Circuit

3301 Low Power Circuit Architecture of AES Crypto Module for Wireless Sensor Network

Authors: MooSeop Kim, Juhan Kim, Yongje Choi

Abstract:

Recently, much research has been conducted for security for wireless sensor networks and ubiquitous computing. Security issues such as authentication and data integrity are major requirements to construct sensor network systems. Advanced Encryption Standard (AES) is considered as one of candidate algorithms for data encryption in wireless sensor networks. In this paper, we will present the hardware architecture to implement low power AES crypto module. Our low power AES crypto module has optimized architecture of data encryption unit and key schedule unit which could be applicable to wireless sensor networks. We also details low power design methods used to design our low power AES crypto module.

Keywords: Algorithm, Low Power Crypto Circuit, AES, Security.

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3300 An Efficient VLSI Design Approach to Reduce Static Power using Variable Body Biasing

Authors: Md. Asif Jahangir Chowdhury, Md. Shahriar Rizwan, M. S. Islam

Abstract:

In CMOS integrated circuit design there is a trade-off between static power consumption and technology scaling. Recently, the power density has increased due to combination of higher clock speeds, greater functional integration, and smaller process geometries. As a result static power consumption is becoming more dominant. This is a challenge for the circuit designers. However, the designers do have a few methods which they can use to reduce this static power consumption. But all of these methods have some drawbacks. In order to achieve lower static power consumption, one has to sacrifice design area and circuit performance. In this paper, we propose a new method to reduce static power in the CMOS VLSI circuit using Variable Body Biasing technique without being penalized in area requirement and circuit performance.

Keywords: variable body biasing, state saving technique, stack effect, dual V-th, static power reduction.

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3299 Design of 900 MHz High Gain SiGe Power Amplifier with Linearity Improved Bias Circuit

Authors: Guiheng Zhang, Wei Zhang, Jun Fu, Yudong Wang

Abstract:

A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Volterra Series is applied to analyze nonlinearity sources of SiGe HBT device model clearly. Meanwhile, the influence of operating current to IMD3 is discussed. Then a β-helper current mirror bias circuit is applied to improve linearity, since the β-helper current mirror bias circuit can offer stable base biasing voltage. Meanwhile, it can also work as predistortion circuit when biasing voltages of three bias circuits are fine-tuned, by this way, the power gain and operating current of PA are optimized for best linearity. The three power stages which fabricated by 0.18 μm SiGe technology are bonded to the printed circuit board (PCB) to obtain impedances by Load-Pull system, then matching networks are done for best linearity with discrete passive components on PCB. The final measured three-stage PA exhibits 21.1 dBm of output power at 1 dB compression point (OP1dB) with power added efficiency (PAE) of 20.6% and 33 dB power gain under 3.3 V power supply voltage.

Keywords: High gain power amplifier, linearization bias circuit, SiGe HBT model, Volterra Series.

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3298 Explicit Delay and Power Estimation Method for CMOS Inverter Driving on-Chip RLC Interconnect Load

Authors: Susmita Sahoo, Madhumanti Datta, Rajib Kar

Abstract:

The resistive-inductive-capacitive behavior of long interconnects which are driven by CMOS gates are presented in this paper. The analysis is based on the ¤Ç-model of a RLC load and is developed for submicron devices. Accurate and analytical expressions for the output load voltage, the propagation delay and the short circuit power dissipation have been proposed after solving a system of differential equations which accurately describe the behavior of the circuit. The effect of coupling capacitance between input and output and the short circuit current on these performance parameters are also incorporated in the proposed model. The estimated proposed delay and short circuit power dissipation are in very good agreement with the SPICE simulation with average relative error less than 6%.

Keywords: Delay, Inverter, Short Circuit Power, ¤Ç-Model, RLCInterconnect, VLSI

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3297 Thermal Analysis of the Current Path from Circuit Breakers Using Finite Element Method

Authors: Adrian T. Plesca

Abstract:

This paper describes a three-dimensional thermal model of the current path included in the low voltage power circuit breakers. The model can be used to analyse the thermal behaviour of the current path during both steady-state and transient conditions. The current path lengthwise temperature distribution and timecurrent characteristic of the terminal connections of the power circuit breaker have been obtained. The influence of the electric current and voltage drop on main electric contact of the circuit breaker has been investigated. To validate the three-dimensional thermal model, some experimental tests have been done. There is a good correlation between experimental and simulation results.

Keywords: Current path, power circuit breakers, temperature distribution, thermal analysis.

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3296 Implementation of RSA Blind Signature on CryptO-0N2 Protocol

Authors: Esti Rahmawati Agustina, Is Esti Firmanesa

Abstract:

Blind Signature were introduced by Chaum. In this scheme, a signer can “sign” a document without knowing the document contain. This is particularly important in electronic voting. CryptO-0N2 is an electronic voting protocol which is development of CryptO-0N. During its development this protocol has not been furnished with the requirement of blind signature, so the choice of voters can be determined by counting center. In this paper will be presented of implementation of blind signature using RSA algorithm.

Keywords: Blind signature, electronic voting protocol, RSA algorithm.

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3295 Novel Approach to Design of a Class-EJ Power Amplifier Using High Power Technology

Authors: F. Rahmani, F. Razaghian, A. R. Kashaninia

Abstract:

This article proposes a new method for application in communication circuit systems that increase efficiency, PAE, output power and gain in the circuit. The proposed method is based on a combination of switching class-E and class-J and has been termed class-EJ. This method was investigated using both theory and simulation to confirm ∼72% PAE and output power of >39dBm. The combination and design of the proposed power amplifier accrues gain of over 15dB in the 2.9 to 3.5GHz frequency bandwidth. This circuit was designed using MOSFET and high power transistors. The loadand source-pull method achieved the best input and output networks using lumped elements. The proposed technique was investigated for fundamental and second harmonics having desirable amplitudes for the output signal.

Keywords: Power Amplifier (PA), GaN HEMT, Class-J and Class-E, High Efficiency.

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3294 Design and Simulation Interface Circuit for Piezoresistive Accelerometers with Offset Cancellation Ability

Authors: Mohsen Bagheri, Ahmad Afifi

Abstract:

This paper presents a new method for read out of the piezoresistive accelerometer sensors. The circuit works based on Instrumentation amplifier and it is useful for reducing offset In Wheatstone Bridge. The obtained gain is 645 with 1μv/°c Equivalent drift and 1.58mw power consumption. A Schmitt trigger and multiplexer circuit control output node. a high speed counter is designed in this work .the proposed circuit is designed and simulated In 0.18μm CMOS technology with 1.8v power supply.

Keywords: Piezoresistive accelerometer, zero offset, Schmitt trigger, bidirectional reversible counter

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3293 An Inductive Coupling Based CMOS Wireless Powering Link for Implantable Biomedical Applications

Authors: Lei Yao, Jia Hao Cheong, Rui-Feng Xue, Minkyu Je

Abstract:

A closed-loop controlled wireless power transmission circuit block for implantable biomedical applications is described in this paper. The circuit consists of one front-end rectifier, power management sub-block including bandgap reference and low drop-out regulators (LDOs) as well as transmission power detection / feedback circuits. Simulation result shows that the front-end rectifier achieves 80% power efficiency with 750-mV single-end peak-to-peak input voltage and 1.28-V output voltage under load current of 4 mA. The power management block can supply 1.8mA average load current under 1V consuming only 12μW power, which is equivalent to 99.3% power efficiency. The wireless power transmission block described in this paper achieves a maximum power efficiency of 80%. The wireless power transmission circuit block is designed and implemented using UMC 65-nm CMOS/RF process. It occupies 1 mm × 1.2 mm silicon area.

Keywords: Implantable biomedical devices, wireless power transfer, LDO, rectifier, closed-loop power control

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3292 Design and Study of a DC/DC Converter for High Power, 14.4 V and 300 A for Automotive Applications

Authors: Julio Cesar Lopes de Oliveira, Carlos Henrique Gonc¸alves Treviso

Abstract:

The shortage of the automotive market in relation to options for sources of high power car audio systems, led to development of this work. Thus, we developed a source with stabilized voltage with 4320 W effective power. Designed to the voltage of 14.4 V and a choice of two currents: 30 A load option in battery banks and 300 A at full load. This source can also be considered as a source of general use dedicated commercial with a simple control circuit in analog form based on discrete components. The assembly of power circuit uses a methodology for higher power than the initially stipulated.

Keywords: DC-DC power converters, converters, power convertion, pulse width modulation converters.

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3291 Off-State Leakage Power Reduction by Automatic Monitoring and Control System

Authors: S. Abdollahi Pour, M. Saneei

Abstract:

This paper propose a new circuit design which monitor total leakage current during standby mode and generates the optimal reverse body bias voltage, by using the adaptive body bias (ABB) technique to compensate die-to-die parameter variations. Design details of power monitor are examined using simulation framework in 65nm and 32nm BTPM model CMOS process. Experimental results show the overhead of proposed circuit in terms of its power consumption is about 10 μW for 32nm technology and about 12 μW for 65nm technology at the same power supply voltage as the core power supply. Moreover the results show that our proposed circuit design is not far sensitive to the temperature variations and also process variations. Besides, uses the simple blocks which offer good sensitivity, high speed, the continuously feedback loop.

Keywords: leakage current, leakage power monitor, body biasing, low power

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3290 New Design of a Broadband Microwave Zero Bias Power Limiter

Authors: K. Echchakhaoui, E. Abdelmounim, J. Zbitou, H. Bennis, N. Ababssi, M. Latrach

Abstract:

In this paper a new design of a broadband microwave power limiter is presented and validated into simulation by using ADS software (Advanced Design System) from Agilent technologies. The final circuit is built on microstrip lines by using identical Zero Bias Schottky diodes. The power limiter is designed by Associating 3 stages Schottky diodes. The obtained simulation results permit to validate this circuit with a threshold input power level of 0 dBm until a maximum input power of 30 dBm.

Keywords: Limiter, microstrip, zero-biais.

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3289 Bridgeless Boost Power Factor Correction Rectifier with Hold-Up Time Extension Circuit

Authors: Chih-Chiang Hua, Yi-Hsiung Fang, Yuan-Jhen Siao

Abstract:

A bridgeless boost (BLB) power factor correction (PFC) rectifier with hold-up time extension circuit is proposed in this paper. A full bridge rectifier is widely used in the front end of the ac/dc converter. Since the shortcomings of the full bridge rectifier, the bridgeless rectifier is developed. A BLB rectifier topology is utilized with the hold-up time extension circuit. Unlike the traditional hold-up time extension circuit, the proposed extension scheme uses fewer active switches to achieve a longer hold-up time. Simulation results are presented to verify the converter performance.

Keywords: Bridgeless boost, boost converter, power factor correction, hold-up time.

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3288 Power MOSFET Models Including Quasi-Saturation Effect

Authors: Abdelghafour Galadi

Abstract:

In this paper, accurate power MOSFET models including quasi-saturation effect are presented. These models have no internal node voltages determined by the circuit simulator and use one JFET or one depletion mode MOSFET transistors controlled by an “effective” gate voltage taking into account the quasi-saturation effect. The proposed models achieve accurate simulation results with an average error percentage less than 9%, which is an improvement of 21 percentage points compared to the commonly used standard power MOSFET model. In addition, the models can be integrated in any available commercial circuit simulators by using their analytical equations. A description of the models will be provided along with the parameter extraction procedure.

Keywords: Power MOSFET, drift layer, quasi-saturation effect, SPICE model, circuit simulation.

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3287 Realization of a Temperature Based Automatic Controlled Domestic Electric Boiling System

Authors: Shengqi Yu, Jinwei Zhao

Abstract:

This paper presents a kind of analog circuit based temperature control system, which is mainly composed by threshold control signal circuit, synchronization signal circuit and trigger pulse circuit. Firstly, the temperature feedback signal function is realized by temperature sensor TS503F3950E. Secondly, the main control circuit forms the cycle controlled pulse signal to control the thyristor switching model. Finally two reverse paralleled thyristors regulate the output power by their switching state. In the consequence, this is a modernized and energy-saving domestic electric heating system.

Keywords: Time base circuit, automatic control, zero-crossing trigger, temperature control.

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3286 A Voltage Based Maximum Power Point Tracker for Low Power and Low Cost Photovoltaic Applications

Authors: Jawad Ahmad, Hee-Jun Kim

Abstract:

This paper describes the design of a voltage based maximum power point tracker (MPPT) for photovoltaic (PV) applications. Of the various MPPT methods, the voltage based method is considered to be the simplest and cost effective. The major disadvantage of this method is that the PV array is disconnected from the load for the sampling of its open circuit voltage, which inevitably results in power loss. Another disadvantage, in case of rapid irradiance variation, is that if the duration between two successive samplings, called the sampling period, is too long there is a considerable loss. This is because the output voltage of the PV array follows the unchanged reference during one sampling period. Once a maximum power point (MPP) is tracked and a change in irradiation occurs between two successive samplings, then the new MPP is not tracked until the next sampling of the PV array voltage. This paper proposes an MPPT circuit in which the sampling interval of the PV array voltage, and the sampling period have been shortened. The sample and hold circuit has also been simplified. The proposed circuit does not utilize a microcontroller or a digital signal processor and is thus suitable for low cost and low power applications.

Keywords: Maximum power point tracker, Sample and hold amplifier, Sampling interval, Sampling period.

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3285 Three-Phase High Frequency AC Conversion Circuit with Dual Mode PWM/PDM Control Strategy for High Power IH Applications

Authors: Nabil A. Ahmed

Abstract:

This paper presents a novel three-phase utility frequency to high frequency soft switching power conversion circuit with dual mode pulse width modulation and pulse density modulation for high power induction heating applications as melting of steel and non ferrous metals, annealing of metals, surface hardening of steel and cast iron work pieces and hot water producers, steamers and super heated steamers. This high frequency power conversion circuit can operate from three-phase systems to produce high current for high power induction heating applications under the principles of ZVS and it can regulate its ac output power from the rated value to a low power level. A dual mode modulation control scheme based on high frequency PWM in synchronization with the utility frequency positive and negative half cycles for the proposed high frequency conversion circuit and utility frequency pulse density modulation is produced to extend its soft switching operating range for wide ac output power regulation. A dual packs heat exchanger assembly is designed to be used in consumer and industrial fluid pipeline systems and it is proved to be suitable for the hot water, steam and super heated steam producers. Experiment and simulation results are given in this paper to verify the operation principles of the proposed ac conversion circuit and to evaluate its power regulation and conversion efficiency. Also, the paper presents a mutual coupling model of the induction heating load instead of equivalent transformer circuit model.

Keywords: Induction heating, three-phase, conversion circuit, pulse width modulation, pulse density modulation, high frequency, soft switching.

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3284 Reducing the Short Circuit Levels in Kuwait Transmission Network (A Case Study)

Authors: Mahmoud Gilany, Wael Al-Hasawi

Abstract:

Preliminary studies on Kuwait high voltage transmission system show significant increase in the short circuit level at some of the grid substations and some generating stations. This increase results from the growth in the power transmission systems in size and complexity. New generating stations are expected to be added to the system within the next few years. This paper describes the study analysis performed to evaluate the available and potential solutions to control SC levels in Kuwait power system. It also presents a modified planning of the transmission network in order to fulfill this task.

Keywords: Short circuit current, network splitting, fault current limiter, power transmission planning.

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3283 Realization of Electronically Controllable Current-mode Square-rooting Circuit Based on MO-CFTA

Authors: P. Silapan, C. Chanapromma, T. Worachak

Abstract:

This article proposes a current-mode square-rooting circuit using current follower transconductance amplifier (CTFA). The amplitude of the output current can be electronically controlled via input bias current with wide input dynamic range. The proposed circuit consists of only single CFTA. Without any matching conditions and external passive elements, the circuit is then appropriate for an IC architecture. The magnitude of the output signal is temperature-insensitive. The PSpice simulation results are depicted, and the given results agree well with the theoretical anticipation. The power consumption is approximately 1.96mW at ±1.5V supply voltages.

Keywords: CFTA, Current-mode, Square-rooting Circuit

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3282 A Low-Voltage Current-Mode Wheatstone Bridge using CMOS Transistors

Authors: Ebrahim Farshidi

Abstract:

This paper presents a new circuit arrangement for a current-mode Wheatstone bridge that is suitable for low-voltage integrated circuits implementation. Compared to the other proposed circuits, this circuit features severe reduction of the elements number, low supply voltage (1V) and low power consumption (<350uW). In addition, the circuit has favorable nonlinearity error (<0.35%), operate with multiple sensors and works by single supply voltage. The circuit employs MOSFET transistors, so it can be used for standard CMOS fabrication. Simulation results by HSPICE show high performance of the circuit and confirm the validity of the proposed design technique.

Keywords: Wheatstone bridge, current-mode, low-voltage, MOS.

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3281 High Efficiency Class-F Power Amplifier Design

Authors: Abdalla Mohamed Eblabla

Abstract:

Due to the high increase in and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. Classes-A, B, C, D, E and F are the main techniques for realizing power amplifiers.

An implementation of high efficiency class-F power amplifier with Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) was realized in this paper. The simulation and optimization of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS). The circuit was designed using lumped elements.

Keywords: Power Amplifier (PA), Gallium Nitride (GaN), Agilent’s Advanced Design system (ADS) and lumped elements.

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3280 Complementary Energy Path Adiabatic Logic based Full Adder Circuit

Authors: Shipra Upadhyay , R. K. Nagaria, R. A. Mishra

Abstract:

In this paper, we present the design and experimental evaluation of complementary energy path adiabatic logic (CEPAL) based 1 bit full adder circuit. A simulative investigation on the proposed full adder has been done using VIRTUOSO SPECTRE simulator of cadence in 0.18μm UMC technology and its performance has been compared with the conventional CMOS full adder circuit. The CEPAL based full adder circuit exhibits the energy saving of 70% to the conventional CMOS full adder circuit, at 100 MHz frequency and 1.8V operating voltage.

Keywords: Adiabatic, CEPAL, full adder, power clock

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3279 Metal-Oxide-Semiconductor-Only Process Corner Monitoring Circuit

Authors: Davit Mirzoyan, Ararat Khachatryan

Abstract:

A process corner monitoring circuit (PCMC) is presented in this work. The circuit generates a signal, the logical value of which depends on the process corner only. The signal can be used in both digital and analog circuits for testing and compensation of process variations (PV). The presented circuit uses only metal-oxide-semiconductor (MOS) transistors, which allow increasing its detection accuracy, decrease power consumption and area. Due to its simplicity the presented circuit can be easily modified to monitor parametrical variations of only n-type and p-type MOS (NMOS and PMOS, respectively) transistors, resistors, as well as their combinations. Post-layout simulation results prove correct functionality of the proposed circuit, i.e. ability to monitor the process corner (equivalently die-to-die variations) even in the presence of within-die variations.

Keywords: Detection, monitoring, process corner, process variation.

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3278 New Gate Stack Double Diffusion MOSFET Design to Improve the Electrical Performances for Power Applications

Authors: Z. Dibi, F. Djeffal, N. Lakhdar

Abstract:

In this paper, we have developed an explicit analytical drain current model comprising surface channel potential and threshold voltage in order to explain the advantages of the proposed Gate Stack Double Diffusion (GSDD) MOSFET design over the conventional MOSFET with the same geometric specifications that allow us to use the benefits of the incorporation of the high-k layer between the oxide layer and gate metal aspect on the immunity of the proposed design against the self-heating effects. In order to show the efficiency of our proposed structure, we propose the simulation of the power chopper circuit. The use of the proposed structure to design a power chopper circuit has showed that the (GSDD) MOSFET can improve the working of the circuit in terms of power dissipation and self-heating effect immunity. The results so obtained are in close proximity with the 2D simulated results thus confirming the validity of the proposed model.

Keywords: Double-Diffusion, modeling, MOSFET, power.

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3277 Design and Implementation of 4 Bit Multiplier Using Fault Tolerant Hybrid Full Adder

Authors: C. Kalamani, V. Abishek Karthick, S. Anitha, K. Kavin Kumar

Abstract:

The fault tolerant system plays a crucial role in the critical applications which are being used in the present scenario. A fault may change the functionality of circuits. Aim of this paper is to design multiplier using fault tolerant hybrid full adder. Fault tolerant hybrid full adder is designed to check and repair any fault in the circuit using self-checking circuit and the self-repairing circuit. Further, the use of conventional logic circuits may result in more area, delay as well as power consumption. In order to reduce these parameters of the circuit, GDI (Gate Diffusion Input) techniques with less number of transistors are used compared to conventional full adder circuit. This reduces the area, delay and power consumption. The proposed method solves the major problems occurring in the most crucial and critical applications.

Keywords: Gate diffusion input, hybrid full adder, self-checking, fault tolerant.

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3276 An Investigation of Short Circuit Analysis in Komag Sarawak Operations (KSO) Factory

Authors: M. H. Hairi, H. Zainuddin, M.H.N. Talib, A. Khamis, J. Y. Lichun

Abstract:

Short circuit currents plays a vital role in influencing the design and operation of equipment and power system and could not be avoided despite careful planning and design, good maintenance and thorough operation of the system. This paper discusses the short circuit analysis conducted in KSO briefly comprising of its significances, methods and results. A result sample of the analysis based on a single transformer is detailed in this paper. Furthermore, the results of the analysis and its significances were also discussed and commented.

Keywords: Short circuit currents, Transformer fault current

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3275 Power Reduction by Automatic Monitoring and Control System in Active Mode

Authors: Somaye Abdollahi Pour, Mohsen Saneei

Abstract:

This paper describes a novel monitoring scheme to minimize total active power in digital circuits depend on the demand frequency, by adjusting automatically both supply voltage and threshold voltages based on circuit operating conditions such as temperature, process variations, and desirable frequency. The delay monitoring results, will be control and apply so as to be maintained at the minimum value at which the chip is able to operate for a given clock frequency. Design details of power monitor are examined using simulation framework in 32nm BTPM model CMOS process. Experimental results show the overhead of proposed circuit in terms of its power consumption is about 40 μW for 32nm technology; moreover the results show that our proposed circuit design is not far sensitive to the temperature variations and also process variations. Besides, uses the simple blocks which offer good sensitivity, high speed, the continuously feedback loop. This design provides up to 40% reduction in power consumption in active mode.

Keywords: active mode, delay monitor, body biasing, VDD scaling, low power.

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3274 Reversible Signed Division for Computing Systems

Authors: D. Krishnaveni, M. Geetha Priya

Abstract:

Applications of reversible logic gates in the design of complex integrated circuits provide power optimization.  This technique finds a great use in low power CMOS design, optical computing, quantum computing and nanotechnology. This paper proposes a reversible signed division circuit that can divide an n-bit signed dividend with an n-bit signed divisor using non-restoration division logic. The proposed design adequately addresses the ‘delay’ there by improving the efficiency of the circuit. An attempt is made to design a reversible signed division circuit. This paper provides a threshold to build more complex arithmetic systems using reversible logic, thus increasing the performance of computing systems.

Keywords: Low power CMOS, quantum computing, reversible logic gates, shift register, signed division.

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3273 On-Chip Aging Sensor Circuit Based on Phase Locked Loop Circuit

Authors: Ararat Khachatryan, Davit Mirzoyan

Abstract:

In sub micrometer technology, the aging phenomenon starts to have a significant impact on the reliability of integrated circuits by bringing performance degradation. For that reason, it is important to have a capability to evaluate the aging effects accurately. This paper presents an accurate aging measurement approach based on phase-locked loop (PLL) and voltage-controlled oscillator (VCO) circuit. The architecture is rejecting the circuit self-aging effect from the characteristics of PLL, which is generating the frequency without any aging phenomena affects. The aging monitor is implemented in low power 32 nm CMOS technology, and occupies a pretty small area. Aging simulation results show that the proposed aging measurement circuit improves accuracy by about 2.8% at high temperature and 19.6% at high voltage.

Keywords: Nanoscale, aging, effect, NBTI, HCI.

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3272 A Silicon Controlled Rectifier-Based ESD Protection Circuit with High Holding Voltage and High Robustness Characteristics

Authors: Kyoung-il Do, Byung-seok Lee, Hee-guk Chae, Jeong-yun Seo Yong-seo Koo

Abstract:

In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage.

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