%0 Journal Article
	%A Z. Dibi and  F. Djeffal and  N. Lakhdar
	%D 2010
	%J International Journal of Electrical and Computer Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 48, 2010
	%T New Gate Stack Double Diffusion MOSFET Design to Improve the Electrical Performances for Power Applications
	%U https://publications.waset.org/pdf/2314
	%V 48
	%X In this paper, we have developed an explicit analytical
drain current model comprising surface channel potential and
threshold voltage in order to explain the advantages of the proposed
Gate Stack Double Diffusion (GSDD) MOSFET design over the
conventional MOSFET with the same geometric specifications that
allow us to use the benefits of the incorporation of the high-k layer
between the oxide layer and gate metal aspect on the immunity of the
proposed design against the self-heating effects. In order to show the
efficiency of our proposed structure, we propose the simulation of the
power chopper circuit. The use of the proposed structure to design a
power chopper circuit has showed that the (GSDD) MOSFET can
improve the working of the circuit in terms of power dissipation and
self-heating effect immunity. The results so obtained are in close
proximity with the 2D simulated results thus confirming the validity
of the proposed model.
	%P 1790 - 1793