Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2

Search results for: Double-Diffusion

2 Heat and Mass Transfer in a Saturated Porous Medium Confined in Cylindrical Annular Geometry

Authors: A. Ja, J. Belabid, A. Cheddadi

Abstract:

This paper reports the numerical simulation of doublediffusive natural convection flows within a horizontal annular filled with a saturated porous medium. The analysis concerns the influence of the different parameters governing the problem, namely, the Rayleigh number Ra, the Lewis number Le and the buoyancy ratio N, on the heat and mass transfer and on the flow structure, in the case of a fixed radius ratio R = 2. The numerical model used for the discretization of the dimensionless equations governing the problem is based on the finite difference method, using the ADI scheme. The study is focused on steady-state solutions in the cooperation situation.

Keywords: natural convection, finite differences, double-diffusion, annular geometry, porous medium

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1 New Gate Stack Double Diffusion MOSFET Design to Improve the Electrical Performances for Power Applications

Authors: Z. Dibi, F. Djeffal, N. Lakhdar

Abstract:

In this paper, we have developed an explicit analytical drain current model comprising surface channel potential and threshold voltage in order to explain the advantages of the proposed Gate Stack Double Diffusion (GSDD) MOSFET design over the conventional MOSFET with the same geometric specifications that allow us to use the benefits of the incorporation of the high-k layer between the oxide layer and gate metal aspect on the immunity of the proposed design against the self-heating effects. In order to show the efficiency of our proposed structure, we propose the simulation of the power chopper circuit. The use of the proposed structure to design a power chopper circuit has showed that the (GSDD) MOSFET can improve the working of the circuit in terms of power dissipation and self-heating effect immunity. The results so obtained are in close proximity with the 2D simulated results thus confirming the validity of the proposed model.

Keywords: Modeling, Power, MOSFET, double-diffusion

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