Novel Approach to Design of a Class-EJ Power Amplifier Using High Power Technology

Authors: F. Rahmani, F. Razaghian, A. R. Kashaninia

Abstract:

This article proposes a new method for application in communication circuit systems that increase efficiency, PAE, output power and gain in the circuit. The proposed method is based on a combination of switching class-E and class-J and has been termed class-EJ. This method was investigated using both theory and simulation to confirm ∼72% PAE and output power of >39dBm. The combination and design of the proposed power amplifier accrues gain of over 15dB in the 2.9 to 3.5GHz frequency bandwidth. This circuit was designed using MOSFET and high power transistors. The loadand source-pull method achieved the best input and output networks using lumped elements. The proposed technique was investigated for fundamental and second harmonics having desirable amplitudes for the output signal.

Keywords: Power Amplifier (PA), GaN HEMT, Class-J and Class-E, High Efficiency.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1107129

References:

[1] Z. Wang, G. Yang and F. Liu, "An Easily Implementable Structure for Broadband High Efficiency Class-J Power Amplifier", IEEE Workshop on Electronics, Computer and Applications, 978-1-4799-4565-8, 2014.
[2] G. Liu, "Fully Integrated CMOS Power Amplifier", Ph.D. Thesis, Berkeley, California, 192, Dec 2006.
[3] A. M. Eblabla, “High Efficiency Class-F Power Amplifier Design”, World Academy of Science, Engineering and Technology, Issue 12, 2013.
[4] A. G. d. M. Coelho, "Monolithic RF Class-E power amplifier on CMOS technologies for IEEE 802.11b/g applications", Technical Report No. ?, Institute Superior Technician, Technical University of Lisbon, October 2010.
[5] S. Rezaei, L. Belostotski and F. M. Ghannouchi, "1.6 GHz – 3 GHz, 10W, 60% Efficiency Class-J PA for Cognitive Radio Applications", IEEE Conference, 4, 978-1-4799-0066-4,2013, pp. 880-883.
[6] F. Rahmani, F. Razaghian and A. A. Kashaninia, “High Power Two- Stage Class-AB/J Power Amplifier with High Gain and Efficiency”, Journal of Academic and Applied Studies (JAAS), Vol. 4(6), June 2014, pp. 56-68.
[7] V. Carrubba, S. Maroldt, M. Mußer, H. Walcher, M. Schlechtweg, R. Quay and O. Ambacher, "Dual-Band Class-ABJ AlGaN/GaN High Power Amplifier", IEEE European Microwave Conference (EuMC), October 2012, pp. 635-638.
[8] S. Rezaei, L. Belostotski, F. M. Ghannouchi and P. Aflaki, "Integrated Design of a Class-J Power Amplifier", Microwave Theory and Techniques IEEE Transactions, Vol.61, Issue 4, 0018-9480, April 2013, pp. 1639-1648.
[9] S. Cripps, “RF Power Amplifiers for Wireless Communications", 2nd ed. ISBN. 1-59693-018-7. United States of America: Artech House, 1999, , pp.173-199.
[10] J. Moon, J. Kim and K. Bumman, "Investigation of a Class-J Power Amplifier With a Nonlinear Cout for Optimized Operation", Microwave Theory and Techniques IEEE Transactions, Vol. 58, Issue 11, 0018- 9480, Nov 2010.
[11] K. Mimis, K. A. Morris, S. Bensmida and J. P. McGeehan, "Multichannel and Wideband Power Amplifier Design Methodology for 4G Communication Systems Based on Hybrid Class-J Operation", Microwave Theory and Techniques IEEE Transactions, Vol. 60, 0018- 9480, August 2012, pp. 2562-2570.