Search results for: Al composition-graded AlGaN layer
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 1009

Search results for: Al composition-graded AlGaN layer

1009 Growth of Non-Polar a-Plane AlGaN Epilayer with High Crystalline Quality and Smooth Surface Morphology

Authors: Abbas Nasir, Xiong Zhang, Sohail Ahmad, Yiping Cui

Abstract:

Non-polar a-plane AlGaN epilayers of high structural quality have been grown on r-sapphire substrate by using metalorganic chemical vapor deposition (MOCVD). A graded non-polar AlGaN buffer layer with variable aluminium concentration was used to improve the structural quality of the non-polar a-plane AlGaN epilayer. The characterisations were carried out by high-resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM) and Hall effect measurement. The XRD and AFM results demonstrate that the Al-composition-graded non-polar AlGaN buffer layer significantly improved the crystalline quality and the surface morphology of the top layer. A low root mean square roughness 1.52 nm is obtained from AFM, and relatively low background carrier concentration down to 3.9×  cm-3 is obtained from Hall effect measurement.

Keywords: Non-polar AlGaN epilayer, Al composition-graded AlGaN layer, root mean square, background carrier concentration.

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1008 On the Operation Mechanism and Device Modeling of AlGaN/GaN High Electron Mobility Transistors (HEMTs)

Authors: Li Yuan, Weizhu Wang, Kean Boon Lee, Haifeng Sun, Susai Lawrence Selvaraj, Shane Todd, Guo-Qiang Lo

Abstract:

In this work, the physical based device model of AlGaN/GaN high electron mobility transistors (HEMTs) has been established and the corresponding device operation behavior has been investigated also by using Sentaurus TCAD from Synopsys. Advanced AlGaN/GaN hetero-structures with GaN cap layer and AlN spacer have been considered and the GaN cap layer and AlN spacer are found taking important roles on the gate leakage blocking and off-state breakdown voltage enhancement.

Keywords: AlGaN/GaN, HEMT, Physical mechanism, TCAD simulation

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1007 Comparative Study of Al2O3 and HfO2 as Gate Dielectric on AlGaN/GaN MOSHEMTs

Authors: K. Karami, S. Hassan, S. Taking, A. Ofiare, A. Dhongde, A. Al-Khalidi, E. Wasige

Abstract:

We have made a comparative study on the influence of Al2O3 and HfO2 grown using Atomic Layer Deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of A2lO3 and HfO2 respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al2O3 gate dielectric layers, respectively. The negative shift for the 20 nm HfO2 and 20 nm Al2O3 were 1.2 V and 4.9 V, respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO2 than Al2O3. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 104 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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1006 Raman Scattering and PL Studies on AlGaN/GaN HEMT Layers on 200 mm Si(111)

Authors: W. Z. Wang, S. Todd, S. B. Dolmanan, K. B. Lee, L. Yuan, H. F. Sun, S. L. Selvaraj, M.Krishnakumar, G. Q. Lo, S. Tripathy

Abstract:

The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.

Keywords: Raman, photo luminescence, AlGaN/GaN, HEMT.

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1005 Capacitance Models of AlGaN/GaN High Electron Mobility Transistors

Authors: A. Douara, N. Kermas, B. Djellouli

Abstract:

In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node.

Keywords: AlGaN/GaN, centroid capacitance, gate capacitance, HEMT, quantum capacitance.

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1004 Fabrication of High-Power AlGaN/GaN Schottky Barrier Diode with Field Plate Design

Authors: Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu

Abstract:

In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage VB. A low turn-on resistance RON (3.55 mΩ-cm2), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage VB (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was LAC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of VB2/ RON = 60.2 MW/cm2, whereas devices with the field plate design show a Baliga’s figure of merit of VB2/ RON = 340.9 MW/cm2 (the anode–cathode distance was LAC = 20 µm).

Keywords: AlGaN/GaN heterostructure, silicon substrate, Schottky barrier diode, high breakdown voltage, field plate, Baliga’s figure-of-merit.

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1003 Static and Dynamic Characteristics of an Appropriated and Recessed n-GaN/AlGaN/GaN HEMT

Authors: A. Hamdoune, M. Abdelmoumene, A. Hamroun

Abstract:

The objective of this paper is to simulate static I-V and dynamic characteristics of an appropriated and recessed n-GaN/AlxGa1-xN/GaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drain-source current (lDS) as a function of the drain-source voltage (VDS) for different values ​​of the gate-source voltage (VGS), and the drain-source current (lDS) depending on the gate-source voltage (VGS) for a drain-source voltage (VDS) of 20 V, for various temperatures. Then, we calculate the cut-off frequency and the maximum oscillation frequency for different temperatures.

We obtain a high drain-current equal to 60 mA, a low knee voltage (Vknee) of 2 V, a high pinch-off voltage (VGS0) of 53.5 V, a transconductance greater than 600 mS/mm, a cut-off frequency (fT) of about 330 GHz, and a maximum oscillation frequency (fmax) of about 1 THz.

Keywords: n-GaN/AlGaN/GaN HEMT, drain-source current (IDS), transconductance (gm), cut-off frequency (fT), maximum oscillation frequency (fmax).

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1002 Study on Hysteresis in Sustainable Two-Layer Circular Tube under a Lateral Compression Load

Authors: Ami Nomura, Ken Imanishi, Yukinori Taniguchi, Etsuko Ueda, Tadahiro Wada, Shinichi Enoki

Abstract:

Recently, there have been a lot of earthquakes in Japan. It is necessary to promote seismic isolation devices for buildings. The devices have been hardly diffused in attached houses, because the devices are very expensive. We should develop a low-cost seismic isolation device for detached houses. We suggested a new seismic isolation device which uses a two-layer circular tube as a unit. If hysteresis is produced in the two-layer circular tube under lateral compression load, we think that the two-layer circular tube can have energy absorbing capacity. It is necessary to contact the outer layer and the inner layer to produce hysteresis. We have previously reported how the inner layer comes in contact with the outer layer from a perspective of analysis used mechanics of materials. We have clarified that the inner layer comes in contact with the outer layer under a lateral compression load. In this paper, we explored contact area between the outer layer and the inner layer under a lateral compression load by using FEA. We think that changing the inner layer’s thickness is effective in increase the contact area. In order to change the inner layer’s thickness, we changed the shape of the inner layer. As a result, the contact area changes depending on the inner layer’s thickness. Additionally, we experimented to check whether hysteresis occurs in fact. As a consequence, we can reveal hysteresis in the two-layer circular tube under the condition.

Keywords: Contact area, energy absorbing capacity, hysteresis, seismic isolation device.

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1001 Development of Single Layer of WO3 on Large Spatial Resolution by Atomic Layer Deposition Technique

Authors: S. Zhuiykov, Zh. Hai, H. Xu, C. Xue

Abstract:

Unique and distinctive properties could be obtained on such two-dimensional (2D) semiconductor as tungsten trioxide (WO3) when the reduction from multi-layer to one fundamental layer thickness takes place. This transition without damaging single-layer on a large spatial resolution remained elusive until the atomic layer deposition (ALD) technique was utilized. Here we report the ALD-enabled atomic-layer-precision development of a single layer WO3 with thickness of 0.77±0.07 nm on a large spatial resolution by using (tBuN)2W(NMe2)2 as tungsten precursor and H2O as oxygen precursor, without affecting the underlying SiO2/Si substrate. Versatility of ALD is in tuning recipe in order to achieve the complete WO3 with desired number of WO3 layers including monolayer. Governed by self-limiting surface reactions, the ALD-enabled approach is versatile, scalable and applicable for a broader range of 2D semiconductors and various device applications.

Keywords: Atomic layer deposition, tungsten oxide, WO3, two-dimensional semiconductors, single fundamental layer.

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1000 Enhancing Landfill Gas Production by Methanogenic Sand Layer

Authors: N. Sapari, S. Mustapha, H. Jusoh

Abstract:

Landfill gas, particularly methane is one of the greenhouse gases which contributes to global warming. This paper presents the findings of a study on methane gas production from simulated landfill reactor under saturated conditions. A reactor was constructed to represent a landfill cell of 2.5 m thickness on sandy soil. The reactor was 0.2 m in diameter and 4 m in height. One meter of sand and pebble layer was packed at the bottom of the reactor followed by 2.5 m of solid waste layer and 0.4 m of sand layer as the cover soil. Degradation of waste in the solid waste layer was at acidification stage as indicated by the leachate quality with COD as high as 55,511 mg/L and pH as low as 5.1. However, methanogenic environment was established at the bottom sand layer after one year of operation indicated by pH of 7.2 and methane gas generation. Leachate degradation took place as the leachate moved through the sand layer at an infiltration of rate 0.7 cm/day. This resulted in landfill gas production of 77 mL/day/kg containing 55 to 65% methane. The application of sand layer contributed to the gas production from landfill by an in-situ degradation of leachate in the sand at the bottom of the landfill.

Keywords: Gas production, methane, methanogenic sand layer, municipal solid waste, saturated landfill

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999 An Extension of Multi-Layer Perceptron Based on Layer-Topology

Authors: Jānis Zuters

Abstract:

There are a lot of extensions made to the classic model of multi-layer perceptron (MLP). A notable amount of them has been designed to hasten the learning process without considering the quality of generalization. The paper proposes a new MLP extension based on exploiting topology of the input layer of the network. Experimental results show the extended model to improve upon generalization capability in certain cases. The new model requires additional computational resources to compare to the classic model, nevertheless the loss in efficiency isn-t regarded to be significant.

Keywords: Learning algorithm, multi-layer perceptron, topology.

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998 The Role of Ga to Improve AlN-Nucleation Layer for Al0.1Ga0.9N/Si(111)

Authors: AlNPhannee Saengkaew, Armin Dadgar, Juergen Blaesing, Thomas Hempel, Sakuntam Sanorpim, Chanchana Thanachayanont, Visittapong Yordsri, Watcharee Rattanasakulthong, Alois Krost

Abstract:

Group-III nitride material as particularly AlxGa1-xN is one of promising optoelectronic materials to require for shortwavelength devices. To achieve the high-quality AlxGa1-xN films for a high performance of such devices, AlN-nucleation layers are the important factor. To improve the AlN-nucleation layers with a variation of Ga-addition, XRD measurements were conducted to analyze the crystalline quality of the subsequent Al0.1Ga0.9N with the minimum ω-FWHMs of (0002) and (10-10) reflections of 425 arcsec and 750 arcsec, respectively. SEM and AFM measurements were performed to observe the surface morphology and TEM measurements to identify the microstructures and orientations. Results showed that the optimized Ga-atoms in the Al(Ga)Nnucleation layers improved the surface diffusion to form moreuniform crystallites in structure and size, better alignment of each crystallite, and better homogeneity of island distribution. This, hence, improves the orientation of epilayers on the Si-surface and finally improves the crystalline quality and reduces the residual strain of subsequent Al0.1Ga0.9N layers.

Keywords: AlGaN, UV-LEDs, seed layers, AFM, TEM

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997 Formation of Chemical Compound Layer at the Interface of Initial Substances A and B with Dominance of Diffusion of the A Atoms

Authors: Pavlo Selyshchev, Samuel Akintunde

Abstract:

A theoretical approach to consider formation of chemical compound layer at the interface between initial substances A and B due to the interfacial interaction and diffusion is developed. It is considered situation when speed of interfacial interaction is large enough and diffusion of A-atoms through AB-layer is much more then diffusion of B-atoms. Atoms from A-layer diffuse toward B-atoms and form AB-atoms on the surface of B-layer. B-atoms are assumed to be immobile. The growth kinetics of the AB-layer is described by two differential equations with non-linear coupling, producing a good fit to the experimental data. It is shown that growth of the thickness of the AB-layer determines by dependence of chemical reaction rate on reactants concentration. In special case the thickness of the AB-layer can grow linearly or parabolically depending on that which of processes (interaction or the diffusion) controls the growth. The thickness of AB-layer as function of time is obtained. The moment of time (transition point) at which the linear growth are changed by parabolic is found.

Keywords: Phase formation, Binary systems, Interfacial Reaction, Diffusion, Compound layers, Growth kinetics.

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996 Stress Distribution in Axisymmetric Indentation of an Elastic Layer-Substrate Body

Authors: Kotaro Miura, Makoto Sakamoto, Yuji Tanabe

Abstract:

We focus on internal stress and displacement of an elastic axisymmetric contact problem for indentation of a layer-substrate body. An elastic layer is assumed to be perfectly bonded to an elastic semi-infinite substrate. The elastic layer is smoothly indented with a flat-ended cylindrical indenter. The analytical and exact solutions were obtained by solving an infinite system of simultaneous equations using the method to express a normal contact stress at the upper surface of the elastic layer as an appropriate series. This paper presented the numerical results of internal stress and displacement distributions for hard-coating system with constant values of Poisson’s ratio and the thickness of elastic layer.

Keywords: Indentation, contact problem, stress distribution, coating materials, layer-substrate body.

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995 A Study on the Iterative Scheme for Stratified Shields Gamma Ray Buildup FactorsUsing Layer-Splitting Technique in Double-Layer Shields

Authors: Sari F. Alkhatib, Chang Je Park, Gyuhong Roh

Abstract:

Theiterative scheme which is used to treat buildup factors for stratified shields is being investigated here using the layer-splitting technique.A simple suggested formalism for the scheme based on the Kalos’ formula is introduced, based on which the implementation of the testing technique is carried out.

The second layer in a double-layer shield was split into two equivalent layers and the scheme (with the suggested formalism) was implemented on the new “three-layer” shieldconfiguration.The results of such manipulation on water-lead and water-iron shields combinations are presented here for 1MeV photons.

It was found that splitting the second layer introduces some deviation on the overall buildup factor value. This expected deviation appeared to be higher in the case of low Z layer followed by high Z. However, the overall performance of the iterative scheme showed a great consistency and strong coherence even with the introduced changes. The introduced layer-splitting testing technique shows the capability to be implemented in test the iterative scheme with a wide range of formalisms.

Keywords: Buildup Factor, Iterative Scheme, Stratified Shields

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994 A Large-Eddy Simulation of Vortex Cell flow with Incoming Turbulent Boundary Layer

Authors: Arpiruk Hokpunna, Michael Manhart

Abstract:

We present a Large-Eddy simulation of a vortex cell with circular shaped. The results show that the flow field can be sub divided into four important zones, the shear layer above the cavity, the stagnation zone, the vortex core in the cavity and the boundary layer along the wall of the cavity. It is shown that the vortex core consits of solid body rotation without much turbulence activity. The vortex is mainly driven by high energy packets that are driven into the cavity from the stagnation point region and by entrainment of fluid from the cavity into the shear layer. The physics in the boundary layer along the cavity-s wall seems to be far from that of a canonical boundary layer which might be a crucial point for modelling this flow.

Keywords: Turbulent flow, Large eddy simulations, boundary layer and cavity flow, vortex cell flow.

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993 Development of Energy Management System Based on Internet of Things Technique

Authors: Wen-Jye Shyr, Chia-Ming Lin, Hung-Yun Feng

Abstract:

The purpose of this study was to develop an energy management system for university campuses based on the Internet of Things (IoT) technique. The proposed IoT technique based on WebAccess is used via network browser Internet Explore and applies TCP/IP protocol. The case study of IoT for lighting energy usage management system was proposed. Structure of proposed IoT technique included perception layer, equipment layer, control layer, application layer and network layer.

Keywords: Energy management, IoT technique, Sensor, WebAccess

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992 A Study of Thermal Convection in Two Porous Layers Governed by Brinkman's Model in Upper Layer and Darcy's Model in Lower Layer

Authors: M. S. Al-Qurashi

Abstract:

This work examines thermal convection in two porous layers. Flow in the upper layer is governed by Brinkman-s equations model and in the lower layer is governed by Darcy-s model. Legendre polynomials are used to obtain numerical solution when the lower layer is heated from below.

Keywords: Brinkman's law, Darcy's law, porous layers, Legendre polynomials, the Oberbeck-Boussineq approximation.

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991 Shear-Layer Instabilities of a Pulsed Stack-Issued Transverse Jet

Authors: Ching M. Hsu, Rong F. Huang, Michael E. Loretero

Abstract:

Shear-layer instabilities of a pulsed stack-issued transverse jet were studied experimentally in a wind tunnel. Jet pulsations were induced by means of acoustic excitation. Streak pictures of the smoke-flow patterns illuminated by the laser-light sheet in the median plane were recorded with a high-speed digital camera. Instantaneous velocities of the shear-layer instabilities in the flow were digitized by a hot-wire anemometer. By analyzing the streak pictures of the smoke-flow visualization, three characteristic flow modes, synchronized flapping jet, transition, and synchronized shear-layer vortices, are identified in the shear layer of the pulsed stack-issued transverse jet at various excitation Strouhal numbers. The shear-layer instabilities of the pulsed stack-issued transverse jet are synchronized by acoustic excitation except for transition mode. In transition flow mode, the shear-layer vortices would exhibit a frequency that would be twice as great as the acoustic excitation frequency.

Keywords: Acoustic excitation, jet in crossflow, shear-layer instability.

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990 Experimental and Numerical Investigation of Air Ejector with Diffuser with Boundary Layer Suction

Authors: Vaclav Dvorak

Abstract:

The article deals with experimental and numerical investigation of axi-symmetric subsonic air to air ejector with diffuser adapted for boundary layer suction. The diffuser, which is placed behind the mixing chamber of the ejector, has high divergence angle and therefore low efficiency. To increase the efficiency, the diffuser is equipped with slot enabling boundary layer suction. The effect of boundary layer suction on flow in ejector, static pressure distribution on the mixing chamber wall and characteristic were measured and studied numerically. Both diffuser and ejector efficiency were evaluated. The diffuser efficiency was increased, however, the efficiency of ejector itself remained low.

Keywords: Air ejector, boundary layer suction, CFD, diffuser.

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989 Numerical Investigation of Instabilities in Free Shear Layer Produced by NS-DBD Actuator

Authors: Ilya Popov, Steven Hulshoff

Abstract:

A numerical investigation of the effects of nanosecond barrier discharge on the stability of a two-dimensional free shear layer is performed. The computations are carried out using a compressible Navier-Stokes algorithm coupled with a thermodynamic model of the discharge. The results show that significant increases in the shear layer-s momentum thickness and Reynolds stresses occur due to actuation. Dependence on both frequency and amplitude of actuation are considered, and a comparison is made of the computed growth rates with those predicted by linear stability theory. Amplitude and frequency ranges for the efficient promotion of shear-layer instabilities are identified.

Keywords: NS-DBD, plasma, actuator, flow control, instability, shear layer

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988 A Frequency Dependence of the Phase Field Model in Laminar Boundary Layer with Periodic Perturbations

Authors: Yasuo Obikane

Abstract:

The frequency dependence of the phase field model(PFM) is studied. A simple PFM is proposed, and is tested in a laminar boundary layer. The Blasius-s laminar boundary layer solution on a flat plate is used for the flow pattern, and several frequencies are imposed on the PFM, and the decay times of the interfaces are obtained. The computations were conducted for three cases: 1) no-flow, and 2) a half ball on the laminar boundary layer, 3) a line of mass sources in the laminar boundary layer. The computations show the decay time becomes shorter as the frequency goes larger, and also show that it is sensitive to both background disturbances and surface tension parameters. It is concluded that the proposed simple PFM can describe the properties of decay process, and could give the fundamentals for the decay of the interface in turbulent flows.

Keywords: Phase field model, two phase flows, Laminarboundary Layer

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987 Effect of Utilization of Geosynthetic on Reducing the Required Thickness of Subbase Layer of a Two Layered Soil

Authors: R. Ziaie Moayed, M. Nazari

Abstract:

This paper tries to study the effect of geosynthetic inclusion on the improvement of the load-settlement characters of two layered soil. In addition, the effect of geogrid and geotextile in reduction of the required thickness of subbase layer in unpaved roads is studied. Considering the vast application of bearing ratio tests in road construction projects, this test is used in present investigation. Bearing ratio tests were performed on two layered soil including a granular soil layer at the top (as the subbase layer) and a weak clayey soil placed at the bottom (as the subgrade layer). These tests were performed for different conditions including unreinforced and reinforced by geogrid and geotextile and three thicknesses for top layer soil (subbase layer). In the reinforced condition the reinforcing element was placed on the interface of the top granular layer and the beneath clayey layer to study the separation effect of geosynthetics. In all tests the soils (both granular and clayey soil layers) were compacted according to optimum water content. At the end, the diagrams were plotted and were compared with each other. Furthermore, a comparison between geogrids and geotextiles behaviors on two layer soil is done in this paper. The results show an increase in compression strength of reinforced specimen in comparison with unreinforced soil sample. The effect of geosynthetic inclusion reduces by increasing the subbase thickness. In addition it was found that geogrids have more desirable behavior rather than geotextiles due to interlocking with the subbase layer aggregates.

Keywords: Bearing ratio, Subgrade, Subbase, Sand layer thickness, Geosynthetic.

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986 CAD/CAM Algorithms for 3D Woven Multilayer Textile Structures

Authors: Martin A. Smith, Xiaogang Chen

Abstract:

This paper proposes new algorithms for the computeraided design and manufacture (CAD/CAM) of 3D woven multi-layer textile structures. Existing commercial CAD/CAM systems are often restricted to the design and manufacture of 2D weaves. Those CAD/CAM systems that do support the design and manufacture of 3D multi-layer weaves are often limited to manual editing of design paper grids on the computer display and weave retrieval from stored archives. This complex design activity is time-consuming, tedious and error-prone and requires considerable experience and skill of a technical weaver. Recent research reported in the literature has addressed some of the shortcomings of commercial 3D multi-layer weave CAD/CAM systems. However, earlier research results have shown the need for further work on weave specification, weave generation, yarn path editing and layer binding. Analysis of 3D multi-layer weaves in this research has led to the design and development of efficient and robust algorithms for the CAD/CAM of 3D woven multi-layer textile structures. The resulting algorithmically generated weave designs can be used as a basis for lifting plans that can be loaded onto looms equipped with electronic shedding mechanisms for the CAM of 3D woven multi-layer textile structures.

Keywords: CAD/CAM, Multi-layer, Textile, Weave.

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985 Sliding Mode Control with Fuzzy Boundary Layer to Air-Air Interception Problem

Authors: Mustafa Resa Becan

Abstract:

The performance of a type of fuzzy sliding mode control is researched by considering the nonlinear characteristic of a missile-target interception problem to obtain a robust interception process. The variable boundary layer by using fuzzy logic is proposed to reduce the chattering around the switching surface then is applied to the interception model which was derived. The performances of the sliding mode control with constant and fuzzy boundary layer are compared at the end of the study and the results are evaluated.

Keywords: Sliding mode control, fuzzy, boundary layer, interception problem.

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984 Two and Three Layer Lamination of Nanofiber

Authors: Roman Knizek, Denisa Karhankova, Ludmila Fridrichova

Abstract:

For their exceptional properties nanofibers, respectively, nanofiber layers are achieving an increasingly wider range of uses. Nowadays nanofibers are used mainly in the field of air filtration where they are removing submicron particles, bacteria, and viruses. Their efficiency is not changed in time, and the power consumption is much lower than that of electrically charged filters. Nanofibers are primarily used for converting and storage of energy in both air and liquid filtration, in food and packaging, protecting the environment, but also in health care which is made possible by their newly discovered properties. However, a major problem of the nanofiber layer is practically zero abrasion resistance; it is, therefore, necessary to laminate the nanofiber layer with another suitable material. Unfortunately, lamination of nanofiber layers is a major problem since the nanofiber layer contains small pores through which it is very difficult for adhesion to pass through. Therefore, there is still only a small percentage of products with these unique fibers 5.

Keywords: Nanofiber layer, nanomembrane, lamination, electrospinning.

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983 High Efficiency Perovskite Solar Cells Fabricated under Ambient Conditions with Mesoporous TiO2/In2O3 Scaffold

Authors: A. Apostolopoulou, D. Sygkridou, A. N. Kalarakis, E. Stathatos

Abstract:

Mesoscopic perovskite solar cells (mp-PSCs) with mesoporous bilayer were fabricated under ambient conditions. The bilayer was formed by capping the mesoporous TiO2 layer with a layer of In2O3. CH3NH3I3-xClx mixed halide perovskite was prepared through the one-step method and was used as the light absorber. The mp-PSCs with the composite TiO2/In2O3 mesoporous layer exhibited optimized electrical parameters, compared with the PSCs that employed only a TiO2 mesoporous layer, with a current density of 23.86 mA/cm2, open circuit voltage of 0.863 V, fill factor of 0.6 and a power conversion efficiency of 11.2%. These results indicate that the formation of a proper semiconductor capping layer over the basic TiO2 mesoporous layer can facilitate the electron transfer, suppress the recombination and subsequently lead to higher charge collection efficiency.

Keywords: Ambient conditions, high efficiency solar cells, mesoscopic perovskite solar cells, TiO2/In2O3 bilayer.

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982 Facile Synthesis of Vertically Aligned ZnO Nanowires on Carbon Layer by Vapour Deposition

Authors: Kh. A. Abdullin, N. B. Bakranov, S. E. Kudaibergenov, S.E. Kumekov, V. N. Ermolaev, L. V. Podrezova

Abstract:

A facile vapour deposition method of synthesis of vertically aligned ZnO nanowires on carbon seed layer was developed. The received samples were investigated on electronic microscope JSM-6490 LA JEOL and x-ray diffractometer X, pert MPD PRO. The photoluminescence spectra (PL) of obtained ZnO samples at a room temperature were studied using He-Cd laser (325 nm line) as excitation source.

Keywords: ZnO nanowires, vapor-phase deposition, Nicatalytic layer, facile method of synthesis, carbon catalytic layer, thephotoluminescence spectra, X-ray spectrum.

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981 Behavior Factor of Flat Double-Layer Space Structures

Authors: Behnam Shirkhanghah, Vahid Shahbaznejhad-Fard, Houshyar Eimani-Kalesar, Babak Pahlevan

Abstract:

Flat double-layer grid is from category of space structures that are formed from two flat layers connected together with diagonal members. Increased stiffness and better seismic resistance in relation to other space structures are advantages of flat double layer space structures. The objective of this study is assessment and calculation of Behavior factor of flat double layer space structures. With regarding that these structures are used widely but Behavior factor used to design these structures against seismic force is not determined and exact, the necessity of study is obvious. This study is theoretical. In this study we used structures with span length of 16m and 20 m. All connections are pivotal. ANSYS software is used to non-linear analysis of structures.

Keywords: Behavior factor, Double-layer, Intensified resistance, Non-linear analysis

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980 Enhancing the Network Security with Gray Code

Authors: Thomas Adi Purnomo Sidhi

Abstract:

Nowadays, network is an essential need in almost every part of human daily activities. People now can seamlessly connect to others through the Internet. With advanced technology, our personal data now can be more easily accessed. One of many components we are concerned for delivering the best network is a security issue. This paper is proposing a method that provides more options for security. This research aims to improve network security by focusing on the physical layer which is the first layer of the OSI model. The layer consists of the basic networking hardware transmission technologies of a network. With the use of observation method, the research produces a schematic design for enhancing the network security through the gray code converter.

Keywords: Network, network security, gray code, physical layer.

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