@article{(Open Science Index):https://publications.waset.org/pdf/10012024,
	  title     = {Growth of Non-Polar a-Plane AlGaN Epilayer with High Crystalline Quality and Smooth Surface Morphology},
	  author    = {Abbas Nasir and  Xiong Zhang and  Sohail Ahmad and  Yiping Cui},
	  country	= {},
	  institution	= {},
	  abstract     = {Non-polar a-plane AlGaN epilayers of high structural quality have been grown on r-sapphire substrate by using metalorganic chemical vapor deposition (MOCVD). A graded non-polar AlGaN buffer layer with variable aluminium concentration was used to improve the structural quality of the non-polar a-plane AlGaN epilayer. The characterisations were carried out by high-resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM) and Hall effect measurement. The XRD and AFM results demonstrate that the Al-composition-graded non-polar AlGaN buffer layer significantly improved the crystalline quality and the surface morphology of the top layer. A low root mean square roughness 1.52 nm is obtained from AFM, and relatively low background carrier concentration down to 3.9×  cm-3 is obtained from Hall effect measurement.
},
	    journal   = {International Journal of Materials and Metallurgical Engineering},
	  volume    = {15},
	  number    = {5},
	  year      = {2021},
	  pages     = {113 - 116},
	  ee        = {https://publications.waset.org/pdf/10012024},
	  url   	= {https://publications.waset.org/vol/173},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 173, 2021},
	}