@article{(Open Science Index):https://publications.waset.org/pdf/9998530,
	  title     = {Formation of Chemical Compound Layer at the Interface of Initial Substances A and B with Dominance of Diffusion of the A Atoms },
	  author    = {Pavlo Selyshchev and  Samuel Akintunde },
	  country	= {},
	  institution	= {},
	  abstract     = {A theoretical approach to consider formation of chemical compound layer at the interface between initial substances A and B due to the interfacial interaction and diffusion is developed. It is considered situation when speed of interfacial interaction is large enough and diffusion of A-atoms through AB-layer is much more then diffusion of B-atoms. Atoms from A-layer diffuse toward B-atoms and form AB-atoms on the surface of B-layer. B-atoms are assumed to be immobile. The growth kinetics of the AB-layer is described by two differential equations with non-linear coupling, producing a good fit to the experimental data. It is shown that growth of the thickness of the AB-layer determines by dependence of chemical reaction rate on reactants concentration. In special case the thickness of the AB-layer can grow linearly or parabolically depending on that which of processes (interaction or the diffusion) controls the growth. The thickness of AB-layer as function of time is obtained. The moment of time (transition point) at which the linear growth are changed by parabolic is found.
},
	    journal   = {International Journal of Physical and Mathematical Sciences},
	  volume    = {8},
	  number    = {6},
	  year      = {2014},
	  pages     = {549 - 551},
	  ee        = {https://publications.waset.org/pdf/9998530},
	  url   	= {https://publications.waset.org/vol/90},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 90, 2014},
	}