Search results for: wide band gap semiconductor.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 1386

Search results for: wide band gap semiconductor.

1056 ATR-IR Study of the Mechanism of Aluminum Chloride Induced Alzheimer’s Disease; Curative and Protective Effect of Lipidium sativum Water Extract on Hippocampus Rats Brain Tissue

Authors: Maha Jameal Balgoon, Gehan A. Raouf, Safaa Y. Qusti, Soad Shaker Ali

Abstract:

The main cause of Alzheimer disease (AD) was believed to be mainly due to the accumulation of free radicals owing to oxidative stress (OS) in brain tissue. The mechanism of the neurotoxicity of Aluminum chloride (AlCl3) induced AD in hippocampus Albino wister rat brain tissue, the curative & the protective effects of Lipidium sativum group (LS) water extract were assessed after 8 weeks by attenuated total reflection spectroscopy ATR-IR and histologically by light microscope. ATR-IR results revealed that the membrane phospholipid undergo free radical attacks, mediated by AlCl3, primary affects the polyunsaturated fatty acids indicated by the increased of the olefinic -C=CH sub-band area around 3012 cm-1 from the curve fitting analysis. The narrowing in the half band width (HBW) of the sνCH2 sub-band around 2852 cm-1 due to Al intoxication indicates the presence of trans form fatty acids rather than gauch rotomer. The degradation of hydrocarbon chain to shorter chain length, increasing in membrane fluidity, disorder, and decreasing in lipid polarity in AlCl3 group indicated by the detected changes in certain calculated area ratios compared to the control. Administration of LS was greatly improved these parameters compared to the AlCl3 group. Al influences the Aβ aggregation and plaque formation, which in turn interferes to and disrupts the membrane structure. The results also showed a marked increase in the β-parallel and antiparallel structure, that characterize the Aβ formation in Al-induced AD hippocampal brain tissue, indicated by the detected increase in both amide I sub-bands around 1674, 1692 cm-1. This drastic increase in Aβ formation was greatly reduced in the curative and protective groups compared to the AlCl3 group and approached nearly the control values. These results supported too by the light microscope. AlCl3 group showed significant marked degenerative changes in hippocampal neurons. Most cells appeared small, shrieked and deformed. Interestingly, the administration of LS in curative and protective groups markedly decreases the amount of degenerated cells compared to the non-treated group. In addition, the intensity of congo red stained cells was decreased. Hippocampal neurons looked more/or less similar to those of control. This study showed a promising therapeutic effect of Lipidium sativum group (LS) on AD rat model that seriously overcome the signs of oxidative stress on membrane lipid and restore the protein misfolding.

Keywords: Aluminum chloride, Alzheimer’s disease, ATR-IR, Lipidium sativum.

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1055 Proposing Enterprise Wide Information Systems Business Performance Model

Authors: Vineet Kansal

Abstract:

Enterprise Wide Information Systems (EWIS) implementation involves the entire business and will require changes throughout the firm. Because of the scope, complexity and continuous nature of ERP, the project-based approach to managing the implementation process resulted in failure rates of between 60% and 80%. In recent years ERP systems have received much attention. The organizational relevance and risk of ERP projects make it important for organizations to focus on ways to make ERP implementation successful. Once these systems are in place, however, their performance depends on the identified macro variables viz. 'Business Process', 'Decision Making' and 'Individual / Group working'. The questionnaire was designed and administered. The responses from 92 organizations were compiled. The relationship of these variables with EWIS performance is analyzed using inferential statistical measurements. The study helps to understand the performance of model presented. The study suggested in keeping away from the calamities and thereby giving the necessary competitive edge. Whenever some discrepancy is identified during the process of performance appraisal care has to be taken to draft necessary preventive measures. If all these measures are taken care off then the EWIS performance will definitely deliver the results.

Keywords: Enterprise Systems, performance, technology

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1054 Evaluating the Tool Wear Rate in Ultrasonic Machining of Titanium using Design of Experiments Approach

Authors: Jatinder Kumar, Vinod Kumar

Abstract:

Ultrasonic machining (USM) is a non-traditional machining process being widely used for commercial machining of brittle and fragile materials such as glass, ceramics and semiconductor materials. However, USM could be a viable alternative for machining a tough material such as titanium; and this aspect needs to be explored through experimental research. This investigation is focused on exploring the use of ultrasonic machining for commercial machining of pure titanium (ASTM Grade-I) and evaluation of tool wear rate (TWR) under controlled experimental conditions. The optimal settings of parameters are determined through experiments planned, conducted and analyzed using Taguchi method. In all, the paper focuses on parametric optimization of ultrasonic machining of pure titanium metal with TWR as response, and validation of the optimized value of TWR by conducting confirmatory experiments.

Keywords: Ultrasonic machining, titanium, tool wear rate

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1053 Computational Analysis of Hemodynamic Effects on Aneurysm Coil Bundle

Authors: Woowon Jeong, Kyehan Rhee

Abstract:

Recurrence of aneurysm rupture can be attributed to coil migration and compaction. In order to verify the effects of hemodynamics on coil compaction and migration, we analyze the forces and displacements on the coil bundle using a computational method. Lateral aneurysms partially filled coils are modeled, and blood flow fields and coil deformations are simulated considering fluid and solid interaction. Effects of aneurysm neck size and parent vessel geometry are also investigated. The results showed that coil deformation was larger in the aneurysms with a wider neck. Parent vessel geometry and aneurysm neck size also affected mean pressure force profiles on the coil surface. Pressure forces were higher in wide neck models with curved parent vessel geometry. Simulation results showed that coils in the wide neck aneurysm with a curved parent vessel may be displaced and compacted more easily.

Keywords: Hemodynamics, Aneurysm, Coil compaction, Fluid Structure Interaction (FSI)

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1052 Comparative Study of Al2O3 and HfO2 as Gate Dielectric on AlGaN/GaN MOSHEMTs

Authors: K. Karami, S. Hassan, S. Taking, A. Ofiare, A. Dhongde, A. Al-Khalidi, E. Wasige

Abstract:

We have made a comparative study on the influence of Al2O3 and HfO2 grown using Atomic Layer Deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of A2lO3 and HfO2 respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al2O3 gate dielectric layers, respectively. The negative shift for the 20 nm HfO2 and 20 nm Al2O3 were 1.2 V and 4.9 V, respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO2 than Al2O3. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 104 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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1051 Compact Tunable 10 W picosecond Sourcebased on Yb-doped Fiber Amplification of Gain Switch Laser Diode

Authors: Hongjun Liu, Cunxiao Gao, Jintao Tao, Wei Zhao, Yishan Wang

Abstract:

A compact tunable 10 W picosecond source based on Yb-doped fiber amplification of gain switch laser diode has been demonstrated. A gain switch semiconductor laser diode was used as the seed source, and a multi-stage single mode Yb-doped fiber preamplifier was combined with two large mode area double-clad Yb-doped fiber main amplifiers to construct the amplification system. The tunable pulses with high stability and excellent beam quality (M2<1.2) of 10 W average power 150 ps pulse duration at 1 MHz repetition rate were obtained. The central wavelength with the line width of 2.5-3 nm was tunable from 1053 nm to 1073 nm.

Keywords: Fiber laser, fiber amplifier, picosecond laser, highpower laser

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1050 Dimensioning of Subsynchronous Cascade for Speed Regulation of Two-Motors 6kv Conveyer Drives

Authors: M. Kasumović, A. Hodžić, M. Tešanović

Abstract:

One way for optimum loading of overdimensioning conveyers is speed (capacity) decrement, with attention for production capabilities and demands. At conveyers which drives with three phase slip-ring induction motor, technically reasonable solution for conveyer (driving motors) speed regulation is using constant torque subsynchronous cascade with static semiconductor converter and transformer for energy reversion to the power network. In the paper is described mathematical model for parameter calculation of two-motors 6 kV subsynchronous cascade. It is also demonstrated that applying of this cascade gave several good properties, foremost in electrical energy saving, also in improving of other energy indexes, and finally that results in cost reduction of complete electrical motor drive.

Keywords: Conveyer with rubber belt, electrical motor drive, sub synchronous cascade

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1049 Measurement of I-V Characteristics of a PtSi/p-Si Schottky Barrier Diode at low Temperatures

Authors: Somayeh Gholami, Meysam Khakbaz

Abstract:

The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height (), ideality factor (n) and series resistance () were found to be 0.2045 eV, 2.877 and 14.556 K respectively. By measuring the I-V characteristics in the temperature range of 85-136 K the electrical parameters were observed to have strong dependency on temperature. The increase of barrier height and decrease of ideality factor with increasing temperature is attributed to the existence of barrier height inhomogeneities in the silicide-semiconductor structure.

Keywords: Schottky diode, barrier height, series resistance, I-V, barrier height inhomogeneities.

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1048 XPM Response of Multiple Quantum Well chirped DFB-SOA All Optical Flip-Flop Switching

Authors: Masoud Jabbari, Mohammad Kazem Moravvej-Farshi, Rahim Ghayour, Abbas Zarifkar

Abstract:

In this paper, based on the coupled-mode and carrier rate equations, derivation of a dynamic model and numerically analysis of a MQW chirped DFB-SOA all-optical flip-flop is done precisely. We have analyzed the effects of strains of QW and MQW and cross phase modulation (XPM) on the dynamic response, and rise and fall times of the DFB-SOA all optical flip flop. We have shown that strained MQW active region in under an optimized condition into a DFB-SOA with chirped grating can improve the switching ON speed limitation in such a of the device, significantly while the fall time is increased. The values of the rise times for such an all optical flip-flop, are obtained in an optimized condition, areas tr=255ps.

Keywords: All-Optical Flip-Flop (AO-FF), Distributed feedback semiconductor optical amplifier (DFB-SOA), Optical Bistability, Multi quantum well (MQW)

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1047 A CUSUM Control Chart to Monitor Wafer Quality

Authors: Sheng-Shu Cheng, Fong-Jung Yu

Abstract:

C-control chart assumes that process nonconformities follow a Poisson distribution. In actuality, however, this Poisson distribution does not always occur. A process control for semiconductor based on a Poisson distribution always underestimates the true average amount of nonconformities and the process variance. Quality is described more accurately if a compound Poisson process is used for process control at this time. A cumulative sum (CUSUM) control chart is much better than a C control chart when a small shift will be detected. This study calculates one-sided CUSUM ARLs using a Markov chain approach to construct a CUSUM control chart with an underlying Poisson-Gamma compound distribution for the failure mechanism. Moreover, an actual data set from a wafer plant is used to demonstrate the operation of the proposed model. The results show that a CUSUM control chart realizes significantly better performance than EWMA.

Keywords: Nonconformities, Compound Poisson distribution, CUSUM control chart.

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1046 Directionally-Sensitive Personal Wearable Radiation Dosimeter

Authors: Hai Huu Le, Paul Junor, Moshi Geso, Graeme O’Keefe

Abstract:

In this paper, the authors propose a personal wearable directionally-sensitive radiation dosimeter using multiple semiconductor CdZnTe detectors. The proposed dosimeter not only measures the real-time dose rate but also provide the direction of the radioactive source. A linear relationship between radioactive source direction and the radiation intensity measured by each detectors is established and an equation to determine the source direction is derived by the authors. The efficiency and accuracy of the proposed dosimeter is verified by simulation using Geant4 package. Results have indicated that in a measurement duration of about 7 seconds, the proposed dosimeter was able to estimate the direction of a 10μCi 137/55Cs radioactive source to within 2 degrees.

Keywords: Dose rate, Geant4 package, radiation detectors, radioactive source direction.

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1045 Radio Regulation Development and Radio Spectrum Analysis of Earth Station in Motion Service

Authors: Fei Peng, Jun Yuan, Chen Fan, Fan Jiang, Qian Sun, Yudi Liu

Abstract:

Although Earth Station in Motion (ESIM) services are widely used and there is a huge market demand around the world, International Telecommunication Union (ITU) does not have unified conclusion for the use of ESIM yet. ESIM are Mobile Satellite Services (MSS) due to its mobile-based attributes, while multiple administrations want to use ESIM in Fixed Satellite Service (FSS). However, Radio Regulations (RR) have strict distinction between MSS and FSS. In this case, ITU has been very controversial because this kind of application will violate the RR Article and the conflict will bring risks to the global deployment. Thus, this paper illustrates the development of rules, regulations, standards concerning ESIM and the radio spectrum usage of ESIM in different regions around the world. Firstly, the basic rules, standard and definition of ITU’s Radiocommunication Sector (ITU-R) is introduced. Secondly, the World Radiocommunication Conference (WRC) agenda item on radio spectrum allocation for ESIM, e.g. in C/Ku/Ka band, is introduced and multi-view on the radio spectrum allocation is elaborated, especially on 19.7-20.2 GHz & 29.5-30.0 GHz. Then, some ITU-R Recommendations and Reports are analyzed on the specific technique to enable these ESIM to communicate with Geostationary Earth Orbit Satellite (GSO) space stations in the FSS without causing interference at levels in excess of that caused by conventional FSS earth stations. Meanwhile, the opposite opinion on not allocating EISM service in FSS frequency band is also elaborated. Finally, based on the ESIM’s future application, the ITU-R standards development trend is forecasted. In conclusion, using radio spectrum resource in an equitable, rational and efficient manner is the basic guideline of ITU. Although it is not a good approach to obstruct the revise of RR when there is a large demand for radio spectrum resource in satellite industry, still the propulsion and global demand of the whole industry may face difficulties on the unclear application in modify rules of RR.

Keywords: Earth Station in motion, ITU standards, radio regulations, radio spectrum, satellite communication.

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1044 Current Developments in Flat-Plate Vacuum Solar Thermal Collectors

Authors: Farid Arya, Trevor Hyde, Paul Henshall, Phillip Eames, Roger Moss, Stan Shire

Abstract:

Vacuum flat plate solar thermal collectors offer several advantages over other collectors namely the excellent optical and thermal characteristics they exhibit due to a combination of their wide surface area and high vacuum thermal insulation. These characteristics can offer a variety of applications for industrial process heat as well as for building integration as they are much thinner than conventional collectors making installation possible in limited spaces. However, many technical challenges which need to be addressed to enable wide scale adoption of the technology still remain. This paper will discuss the challenges, expectations and requirements for the flat-plate vacuum solar collector development. In addition, it will provide an overview of work undertaken in Ulster University, Loughborough University, and the University of Warwick on flat-plate vacuum solar thermal collectors. Finally, this paper will present a detailed experimental investigation on the development of a vacuum panel with a novel sealing method which will be used to accommodate a novel slim hydroformed solar absorber.

Keywords: Hot box calorimeter, infrared thermography, solar thermal collector, vacuum insulation.

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1043 Accurate Time Domain Method for Simulation of Microstructured Electromagnetic and Photonic Structures

Authors: Vijay Janyani, Trevor M. Benson, Ana Vukovic

Abstract:

A time-domain numerical model within the framework of transmission line modeling (TLM) is developed to simulate electromagnetic pulse propagation inside multiple microcavities forming photonic crystal (PhC) structures. The model developed is quite general and is capable of simulating complex electromagnetic problems accurately. The field quantities can be mapped onto a passive electrical circuit equivalent what ensures that TLM is provably stable and conservative at a local level. Furthermore, the circuit representation allows a high level of hybridization of TLM with other techniques and lumped circuit models of components and devices. A photonic crystal structure formed by rods (or blocks) of high-permittivity dieletric material embedded in a low-dielectric background medium is simulated as an example. The model developed gives vital spatio-temporal information about the signal, and also gives spectral information over a wide frequency range in a single run. The model has wide applications in microwave communication systems, optical waveguides and electromagnetic materials simulations.

Keywords: Computational Electromagnetics, Numerical Simulation, Transmission Line Modeling.

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1042 Modeling and Simulations of Surface Plasmon Waveguide Structures

Authors: Moussa Hamdan, Abdulati Abdullah

Abstract:

This paper presents an investigation of the fabrication of the optical devices in terms of their characteristics based on the use of the electromagnetic waves. Planar waveguides are used to examine the field modes (bound modes) and the parameters required for this structure. The modifications are conducted on surface plasmons based waveguides. Simple symmetric dielectric slab structure is used and analyzed in terms of transverse electric mode (TE-Mode) and transverse magnetic mode (TM-Mode. The paper presents mathematical and numerical solutions for solving simple symmetric plasmons and provides simulations of surface plasmons for field confinement. Asymmetric TM-mode calculations for dielectric surface plasmons are also provided.

Keywords: Surface plasmons, optical waveguides, semiconductor lasers, refractive index, slab dialectical.

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1041 Augmentation Opportunity of Transmission Control Protocol Performance in Wireless Networks and Cellular Systems

Authors: Ghassan A. Abed, Samir I. Badrawi

Abstract:

The advancement in wireless technology with the wide use of mobile devices have drawn the attention of the research and technological communities towards wireless environments, such as Wireless Local Area Networks (WLANs), Wireless Wide Area Networks (WWANs), and mobile systems and ad-hoc networks. Unfortunately, wired and wireless networks are expressively different in terms of link reliability, bandwidth, and time of propagation delay and by adapting new solutions for these enhanced telecommunications, superior quality, efficiency, and opportunities will be provided where wireless communications were otherwise unfeasible. Some researchers define 4G as a significant improvement of 3G, where current cellular network’s issues will be solved and data transfer will play a more significant role. For others, 4G unifies cellular and wireless local area networks, and introduces new routing techniques, efficient solutions for sharing dedicated frequency bands, and an increased mobility and bandwidth capacity. This paper discusses the possible solutions and enhancements probabilities that proposed to improve the performance of Transmission Control Protocol (TCP) over different wireless networks and also the paper investigated each approach in term of advantages and disadvantages.

Keywords: TCP, Wireless Networks, Cellular Systems, WLAN.

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1040 Structural and Optical Characterization of Silica@PbS Core–Shell Nanoparticles

Authors: A. Pourahmad, Sh. Gharipour

Abstract:

The present work describes the preparation and characterization of nanosized SiO2@PbS core-shell particles by using a simple wet chemical route. This method utilizes silica spheres formation followed by successive ionic layer adsorption and reaction method assisted lead sulphide shell layer formation. The final product was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–vis spectroscopic, infrared spectroscopy (IR) and transmission electron microscopy (TEM) experiments. The morphological studies revealed the uniformity in size distribution with core size of 250 nm and shell thickness of 18 nm. The electron microscopic images also indicate the irregular morphology of lead sulphide shell layer. The structural studies indicate the face-centered cubic system of PbS shell with no other trace for impurities in the crystal structure.

Keywords: Core-shell, nanostructure, semiconductor, optical property, XRD.

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1039 Theory of Nanowire Radial p-n-Junction

Authors: Stepan Petrosyan, Ashkhen Yesayan, Suren Nersesyan

Abstract:

We have developed an analytic model for the radial pn-junction in a nanowire (NW) core-shell structure utilizing as a new building block in different semiconductor devices. The potential distribution through the p-n-junction is calculated and the analytical expressions are derived to compute the depletion region widths. We show that the widths of space charge layers, surrounding the core, are the functions of core radius, which is the manifestation of so called classical size effect. The relationship between the depletion layer width and the built-in potential in the asymptotes of infinitely large core radius transforms to square-root dependence specific for conventional planar p-n-junctions. The explicit equation is derived to compute the capacitance of radial p-n-junction. The current-voltage behavior is also carefully determined taking into account the “short base" effects.

Keywords: Snanowire, p-n- junction, barrier capacitance, high injection.

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1038 The Light Response Characteristics of Oxide-Based Thin Film Transistors

Authors: Soo-Yeon Lee, Seung-Min Song, Moon-Kyu Song, Woo-Geun Lee, Kap-Soo Yoon, Jang-Yeon Kwon, Min-Koo Han

Abstract:

We fabricated the inverted-staggered etch stopper structure oxide-based TFT and investigated the characteristics of oxide TFT under the 400 nm wavelength light illumination. When 400 nm light was illuminated, the threshold voltage (Vth) decreased and subthreshold slope (SS) increased at forward sweep, while Vth and SS were not altered when larger wavelength lights, such as 650 nm, 550 nm and 450 nm, were illuminated. At reverse sweep, the transfer curve barely changed even under 400 nm light. Our experimental results support that photo-induced hole carriers are captured by donor-like interface trap and it caused the decrease of Vth and increase of SS. We investigated the interface trap density increases proportionally to the photo-induced hole concentration at active layer.

Keywords: thin film transistor, oxide-based semiconductor, lightresponse

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1037 A Sub-mW Low Noise Amplifier for Wireless Sensor Networks

Authors: Gianluca Cornetta, David J. Santos, Balwant Godara

Abstract:

A 1.2 V, 0.61 mA bias current, low noise amplifier (LNA) suitable for low-power applications in the 2.4 GHz band is presented. Circuit has been implemented, laid out and simulated using a UMC 130 nm RF-CMOS process. The amplifier provides a 13.3 dB power gain a noise figure NF< 2.28 dB and a 1-dB compression point of -15.69 dBm, while dissipating 0.74 mW. Such performance make this design suitable for wireless sensor networks applications such as ZigBee.

Keywords: Current Reuse, IEEE 802.15.4 (ZigBee), Low NoiseAmplifiers, Wireless Sensor Networks.

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1036 Fabrication and Characterization of Al/Methyl Orange/n-Si Heterojunction Diode

Authors: Muhammad Tahir, Muhammad H. Sayyad, Dil N. Khan, Fazal Wahab

Abstract:

Herein, the organic semiconductor methyl orange (MO), is investigated for the first time for its electronic applications. For this purpose, Al/MO/n-Si heterojunction is fabricated through economical cheap and simple “drop casting” technique. The currentvoltage (I-V) measurements of the device are made at room temperature under dark conditions. The I-V characteristics of Al/MO/n-Si junction exhibits asymmetrical and rectifying behavior that confirms the formation of diode. The diode parameters such as rectification ratio (RR), turn on voltage (Vturn on), reverse saturation current (I0), ideality factor (n), barrier height ( b f ), series resistance (Rs) and shunt resistance (Rsh) are determined from I-V curves using Schottky equations. These values of these parameters are also extracted and verified by applying Cheung’s functions. The conduction mechanisms are explained from the forward bias I-V characteristics using the power law.

Keywords: Electrical properties, Organic/inorganic heterojunction diode, Methyl Orange, Cheungs Functions

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1035 On the Transition of Europe’s Power Sector: Economic Consequences of National Targets

Authors: Geoffrey J. Blanford, Christoph Weissbart

Abstract:

The prospects for the European power sector indicate that it has to almost fully decarbonize in order to reach the economy-wide target of CO2-emission reduction. We apply the EU-REGEN model to explain the penetration of RES from an economic perspective, their spatial distribution, and the complementary role of conventional generation technologies. Furthermore, we identify economic consequences of national energy and climate targets. Our study shows that onshore wind power will be the most crucial generation technology for the future European power sector. Its geographic distribution is driven by resource quality. Gas power will be the major conventional generation technology for backing-up wind power. Moreover, a complete phase out of coal power proves to be not economically optimal. The paper demonstrates that existing national targets have a negative impact, especially on the German region with higher prices and lower revenues. The remaining regions profit are hardly affected. We encourage an EU-wide coordination on the expansion of wind power with harmonized policies. Yet, this requires profitable market structures for both, RES and conventional generation technologies.

Keywords: European decarbonization pathway, power market investment, public policies, technology choice.

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1034 Design and Characterization of a CMOS Process Sensor Utilizing Vth Extractor Circuit

Authors: Rohana Musa, Yuzman Yusoff, Chia Chieu Yin, Hanif Che Lah

Abstract:

This paper presents the design and characterization of a low power Complementary Metal Oxide Semiconductor (CMOS) process sensor. The design is targeted for implementation using Silterra’s 180 nm CMOS process technology. The proposed process sensor employs a voltage threshold (Vth) extractor architecture for detection of variations in the fabrication process. The process sensor generates output voltages in the range of 401 mV (fast-fast corner) to 443 mV (slow-slow corner) at nominal condition. The power dissipation for this process sensor is 6.3 µW with a supply voltage of 1.8V with a silicon area of 190 µm X 60 µm. The preliminary result of this process sensor that was fabricated indicates a close resemblance between test and simulated results.

Keywords: CMOS Process sensor, Process, Voltage and Temperature (PVT) sensor, threshold extractor circuit, Vth extractor circuit.

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1033 RF Link Budget Analysis at 915 MHz band for Wireless Sensor Networks

Authors: Abdellah Chehri, Hussein Mouftah, Paul Fortier, Hasnaa Aniss

Abstract:

Wireless sensor network has recently emerged as enablers of several areas. Real applications of WSN are being explored and some of them are yet to come. While the potential of sensor networks has been only beginning to be realized, several challenges still remain. One of them is the experimental evaluation of WSN. Therefore, deploying and operating a testbed to study the real behavior of WSN become more and more important. The main contribution of this work is to analysis the RF link budget behavior of wireless sensor networks in underground mine gallery.

Keywords: Sensor networks, RF Link, path loss.

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1032 Characterization of Responsivity, Sensitivity and Spectral Response in Thin Film SOI photo-BJMOS -FET Compatible with CMOS Technology

Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Jian-Ping Zeng, Tai-Hong Wang

Abstract:

Photo-BJMOSFET (Bipolar Junction Metal-Oxide- Semiconductor Field Effect Transistor) fabricated on SOI film was proposed. ITO film is adopted in the device as gate electrode to reduce light absorption. Depletion region but not inversion region is formed in film by applying gate voltage (but low reverse voltage) to achieve high photo-to-dark-current ratio. Comparisons of photoelectriccharacteristics executed among VGK=0V, 0.3V, 0.6V, 0.9V and 1.0V (reverse voltage VAK is equal to 1.0V for total area of 10×10μm2). The results indicate that the greatest improvement in photo-to-dark-current ratio is achieved up to 2.38 at VGK=0.6V. In addition, photo-BJMOSFET is compatible with CMOS integration due to big input resistance

Keywords: Photo-BJMOSFET, Responsivity, Sensitivity, Spectral response.

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1031 Evaluation of Seismic Parameters and Response Modification Factor of Connections in Reduced Beam Section

Authors: Elmira Tavasoli Yousef Abadi

Abstract:

All structural components influencing the inelastic analysis alter response modification factor too. Ductility of connections has been regarded among the factors which have a direct impact on steel frame response modification factor. The experience of recent earthquakes such as the 1994 Northridge earthquake showed that structural connections in steel frame incurred unexpected (brittle) fracture in beam-to-column connection area. One of the methods to improve performance of moment frames is to reduce the beam section near the connection to the column. Reduced Beam Section (RBS) refers to one of the proposed moment connections in FEMA350. Ductility is the most important advantage of this connection over the other moment connections; it is found as the major factor in suitable plastic behavior of structural system. In this paper, beam-to-column connection with RBS and wide-flange beams has been examined via software Abaqus 6.12. It is observed that use of RBS connections can improve the connection behavior at inelastic area to a large extent and avoid stress concentrations and large deformation in the column.

Keywords: RBS, seismic performance, beam-to-column connection, ductility, wide-flange beam.

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1030 Simulation with Uncertainties of Active Controlled Vibration Isolation System for Astronaut’s Exercise Platform

Authors: Shield B. Lin, Ziraguen O. Williams

Abstract:

In a task to assist NASA in analyzing the dynamic forces caused by operational countermeasures of an astronaut’s exercise platform impacting the spacecraft, an active proportional-integral-derivative controller commanding a linear actuator is proposed in a vibration isolation system to regulate the movement of the exercise platform. Computer simulation shows promising results that most exciter forces can be reduced or even eliminated. This paper emphasizes on parameter uncertainties, variations and exciter force variations. Drift and variations of system parameters in the vibration isolation system for astronaut’s exercise platform are analyzed. An active controlled scheme is applied with the goals to reduce the platform displacement and to minimize the force being transmitted to the spacecraft structure. The controller must be robust enough to accommodate the wide variations of system parameters and exciter forces. Computer simulation for the vibration isolation system was performed via MATLAB/Simulink and Trick. The simulation results demonstrate the achievement of force reduction with small platform displacement under wide ranges of variations in system parameters. 

Keywords: control, counterweight, isolation, vibration

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1029 Influence of Chirp of High-Speed Laser Diodes and Fiber Dispersion on Performance of Non-Amplified 40-Gbps Optical Fiber Links

Authors: Moustafa Ahmed, Ahmed Bakry, Safwat W. Z. Mahmoud

Abstract:

We model and simulate the combined effect of fiber dispersion and frequency chirp of a directly modulated high-speed laser diode on the figures of merit of a non-amplified 40-Gbps optical fiber link. We consider both the return to zero (RZ) and non-return to zero (NRZ) patterns of the pseudorandom modulation bits. The performance of the fiber communication system is assessed by the fiber-length limitation due to the fiber dispersion. We study the influence of replacing standard single-mode fibers by non-zero dispersion-shifted fibers on the maximum fiber length and evaluate the associated power penalty. We introduce new dispersion tolerances for 1-dB power penalty of the RZ and NRZ 40-Gbps optical fiber links.

Keywords: Bit error rate, dispersion, frequency chirp, fiber communications, semiconductor laser.

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1028 Family-size Biogas Plant Using Manure and Urine Mixture at Ambient Temperature in Semi-arid Regions of Northwestern China

Authors: Wenguang Ding, Yang Wu, Xia Wang, Yayu Gao

Abstract:

Biogas, a clean renewable energy, is attracting a growing concern of researchers and professionals in many fields. Based on the natural and climatic conditions in semi-arid regions of northwestern China, the present study introduces a specifically-designed family-size biogas plant (with a digester of 10m3) with manure and urine of animals and humanity as raw materials. The biogas plant is applicable to areas with altitudes of more than 2000 meters in northwestern China. In addition to the installation cost, a little operational expenditure, structure, characteristics, benefits of this small-scale biogas plant, this article introduces a wide range of specific popularization methods such as training, financial support, guided tour to the biogas plant, community-based group study and delivery of operational manuals. The feasibility of the biogas plant is explored on the basis of the availability of the raw materials. Simple operations contained in the current work increase the possibility of the wide use of this small-scale biogas plant in similar regions of the world.

Keywords: biogas, family-size biogas plant, northwestern China, popularization

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1027 Nanocrystalline Na0.1V2O5.nH2O Xerogel Thin Film for Gas Sensing

Authors: M. S. Al-Assiri, M. M. El-Desoky, Ahmed A. Ibrahim, M. Abaker, A. A. Bahgat

Abstract:

Nanocrystalline thin film of Na0.1V2O5.nH2O xerogel obtained by sol gel synthesis was used as gas sensor. Gas sensing properties of different gases such as hydrogen, petroleum and humidity were investigated. Applying XRD and TEM the size of the nanocrystals is found to be 7.5 nm. SEM shows a highly porous structure with submicron meter-sized voids present throughout the sample. FTIR measurement shows different chemical groups identifying the obtained series of gels. The sample was n-type semiconductor according to the thermoelectric power and electrical conductivity. It can be seen that the sensor response curves from 130oC to 150oC show a rapid increase in sensitivity for all types of gas injection, low response values for heating period and the rapid high response values for cooling period. This result may suggest that this material is able to act as gas sensor during the heating and cooling process.

Keywords: Sol gel, Thermoelectric power, XRD, TEM, Gas sensing.

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