Search results for: non uniform poly gate doping
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 704

Search results for: non uniform poly gate doping

584 Computing Center Conditions for Non-analytic Vector Fields with Constant Angular Speed

Authors: Li Feng

Abstract:

We investigate the planar quasi-septic non-analytic systems which have a center-focus equilibrium at the origin and whose angular speed is constant. The system could be changed into an analytic system by two transformations, with the help of computer algebra system MATHEMATICA, the conditions of uniform isochronous center are obtained.

Keywords: Non-analytic, center–focus problem, Lyapunov constant, uniform isochronous center.

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583 FPGA Based Parallel Architecture for the Computation of Third-Order Cross Moments

Authors: Syed Manzoor Qasim, Shuja Abbasi, Saleh Alshebeili, Bandar Almashary, Ateeq Ahmad Khan

Abstract:

Higher-order Statistics (HOS), also known as cumulants, cross moments and their frequency domain counterparts, known as poly spectra have emerged as a powerful signal processing tool for the synthesis and analysis of signals and systems. Algorithms used for the computation of cross moments are computationally intensive and require high computational speed for real-time applications. For efficiency and high speed, it is often advantageous to realize computation intensive algorithms in hardware. A promising solution that combines high flexibility together with the speed of a traditional hardware is Field Programmable Gate Array (FPGA). In this paper, we present FPGA-based parallel architecture for the computation of third-order cross moments. The proposed design is coded in Very High Speed Integrated Circuit (VHSIC) Hardware Description Language (VHDL) and functionally verified by implementing it on Xilinx Spartan-3 XC3S2000FG900-4 FPGA. Implementation results are presented and it shows that the proposed design can operate at a maximum frequency of 86.618 MHz.

Keywords: Cross moments, Cumulants, FPGA, Hardware Implementation.

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582 Mining of Interesting Prediction Rules with Uniform Two-Level Genetic Algorithm

Authors: Bilal Alatas, Ahmet Arslan

Abstract:

The main goal of data mining is to extract accurate, comprehensible and interesting knowledge from databases that may be considered as large search spaces. In this paper, a new, efficient type of Genetic Algorithm (GA) called uniform two-level GA is proposed as a search strategy to discover truly interesting, high-level prediction rules, a difficult problem and relatively little researched, rather than discovering classification knowledge as usual in the literatures. The proposed method uses the advantage of uniform population method and addresses the task of generalized rule induction that can be regarded as a generalization of the task of classification. Although the task of generalized rule induction requires a lot of computations, which is usually not satisfied with the normal algorithms, it was demonstrated that this method increased the performance of GAs and rapidly found interesting rules.

Keywords: Classification rule mining, data mining, genetic algorithms.

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581 Thermoelectric Properties of Doped Polycrystalline Silicon Film

Authors: Li Long, Thomas Ortlepp

Abstract:

The transport properties of carriers in polycrystalline silicon film affect the performance of polycrystalline silicon-based devices. They depend strongly on the grain structure, grain boundary trap properties and doping concentration, which in turn are determined by the film deposition and processing conditions. Based on the properties of charge carriers, phonons, grain boundaries and their interactions, the thermoelectric properties of polycrystalline silicon are analyzed with the relaxation time approximation of the Boltzmann transport equation. With this approach, thermal conductivity, electrical conductivity and Seebeck coefficient as a function of grain size, trap properties and doping concentration can be determined. Experiment on heavily doped polycrystalline silicon is carried out and measurement results are compared with the model.

Keywords: Conductivity, polycrystalline silicon, relaxation time approximation, Seebeck coefficient, thermoelectric property.

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580 Comprehensive Nonlinearity Simulation of Different Types and Modes of HEMTs with Respect to Biasing Conditions

Authors: M. M. Karkhanehchi, A. Ammani

Abstract:

A simple analytical model has been developed to optimize biasing conditions for obtaining maximum linearity among lattice-matched, pseudomorphic and metamorphic HEMT types as well as enhancement and depletion HEMT modes. A nonlinear current-voltage model has been simulated based on extracted data to study and select the most appropriate type and mode of HEMT in terms of a given gate-source biasing voltage within the device so as to employ the circuit for the highest possible output current or voltage linear swing. Simulation results can be used as a basis for the selection of optimum gate-source biasing voltage for a given type and mode of HEMT with regard to a circuit design. The consequences can also be a criterion for choosing the optimum type or mode of HEMT for a predetermined biasing condition.

Keywords: Biasing, characteristic, linearity, simulation.

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579 Use of Recycled PVB as a Protection against Carbonation

Authors: Michael Tupý, Vít Petránek

Abstract:

The paper is focused on testing of the poly(vinyl butyral) (PVB) layer which had the function of a CO2 insulating protection against concrete and mortar carbonation. The barrier efficiency of PVB was verified by the measurement of diffusion characteristics. Two different types of PVB were tested; original extruded PVB sheet and PVB sheet made from PVB dispersion which was obtained from recycled windshields. The work deals with the testing CO2 diffusion when polymer sheets were exposed to a CO2 atmosphere (10% v/v CO2) with 0% RH. The excellent barrier capability against CO2 permeability of original and also recycled types of PVB layers was observed. This application of PVB waste can bring advantageous use in civil engineering and significant environmental contribution.

Keywords: Windshield, Poly(vinyl butyral), Mortar, Diffusion, Carbonatation, Polymer waste.

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578 Rational Structure of Cable Truss

Authors: V. Goremikins, K. Rocens, D. Serdjuks

Abstract:

One of the main problems of suspended cable structures is initial shape change under the action of non uniform load. The problem can be solved by increasing of weight of construction or by using of prestressing. But this methods cause increasing of materials consumption of suspended cable structure. The cable truss usage is another way how the problem of shape change under the action of non uniform load can be fixed. The cable trusses with the vertical and inclined suspensions, cross web and single cable were analyzed as the main load-bearing structures of suspension bridge. It was shown, that usage of cable truss allows to reduce the vertical displacements up to 32% in comparison with the single cable in case of non uniformly distributed load. In case of uniformly distributed load single cable is preferable.

Keywords: Cable trusses, Non uniform load, Suspension bridge, Vertical displacements.

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577 Effect of a Magnetic Field on the Onset of Marangoni Convection in a Micropolar Fluid

Authors: Mohd Nasir Mahmud, Ruwaidiah Idris, Ishak Hashim

Abstract:

With the presence of a uniform vertical magnetic field and suspended particles, thermocapillary instability in a horizontal liquid layer is investigated. The resulting eigenvalue is solved by the Galerkin technique for various basic temperature gradients. It is found that the presence of magnetic field always has a stability effect of increasing the critical Marangoni number.

Keywords: Marangoni convection, Magnetic field, Micropolar fluid, Non-uniform thermal gradient, Thermocapillary.

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576 Comparison of Processing Conditions for Plasticized PVC and PVB

Authors: Michael Tupý, Jaroslav Císař, Pavel Mokrejš, Dagmar Měřínská, Alice Tesaříková-Svobodová

Abstract:

It is the worldwide problem that the recycled PVB is not recycled and it is wildly stored in landfills. However, PVB has similar chemical properties such as PVC. Moreover, both of these polymers are plasticized. Therefore, the study of thermal properties of plasticized PVC and the recycled PVB obtained by recycling of windshields is carried out. This work has done in order to find nondegradable processing conditions applicable for both polymers. Tested PVC contained 38% of plasticizer diisononyl phthalate (DINP) and PVB was plasticized with 28% of triethylene glycol, bis(2-ethylhexanoate) (3GO). The thermal and thermo-oxidative decomposition of both vinyl polymers are compared by calorimetric analysis and by tensile strength analysis.

Keywords: Poly(vinyl chloride), Poly(vinyl butyral), Recycling, Reprocessing, Thermal analysis, Decomposition.

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575 An Approach for Modeling CMOS Gates

Authors: Spyridon Nikolaidis

Abstract:

A modeling approach for CMOS gates is presented based on the use of the equivalent inverter. A new model for the inverter has been developed using a simplified transistor current model which incorporates the nanoscale effects for the planar technology. Parametric expressions for the output voltage are provided as well as the values of the output and supply current to be compatible with the CCS technology. The model is parametric according the input signal slew, output load, transistor widths, supply voltage, temperature and process. The transistor widths of the equivalent inverter are determined by HSPICE simulations and parametric expressions are developed for that using a fitting procedure. Results for the NAND gate shows that the proposed approach offers sufficient accuracy with an average error in propagation delay about 5%.

Keywords: CMOS gate modeling, Inverter modeling, transistor current model, timing model.

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574 Flutter Analysis of Slender Beams with Variable Cross Sections Based on Integral Equation Formulation

Authors: Z. El Felsoufi, L. Azrar

Abstract:

This paper studies a mathematical model based on the integral equations for dynamic analyzes numerical investigations of a non-uniform or multi-material composite beam. The beam is subjected to a sub-tangential follower force and elastic foundation. The boundary conditions are represented by generalized parameterized fixations by the linear and rotary springs. A mathematical formula based on Euler-Bernoulli beam theory is presented for beams with variable cross-sections. The non-uniform section introduces non-uniformity in the rigidity and inertia of beams and consequently, more complicated equilibrium who governs the equation. Using the boundary element method and radial basis functions, the equation of motion is reduced to an algebro-differential system related to internal and boundary unknowns. A generalized formula for the deflection, the slope, the moment and the shear force are presented. The free vibration of non-uniform loaded beams is formulated in a compact matrix form and all needed matrices are explicitly given. The dynamic stability analysis of slender beam is illustrated numerically based on the coalescence criterion. A realistic case related to an industrial chimney is investigated.

Keywords: Chimney, BEM and integral equation formulation, non uniform cross section, vibration and Flutter.

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573 Influences of Si and C- Doping on the Al-27 and N-14 Quardrupole Coupling Constants in AlN Nanotubes: A DFT Study

Authors: A.Seif, H.Aghaie, K.Majlesi

Abstract:

A computational study at the level density functional theory (DFT) was carried out to investigate the influences of Si and C-doping on the 14N and 27Al quadrupole coupling constant in the (10, 0) zigzag single ? walled Aluminum-Nitride nanotube (AlNNT). To this aim, a 1.16nm, length of AlNNT consisting of 40 Al atoms and 40 N atoms were selected where the end atoms are capped by hydrogen atom. To follow the purpose, three Si atoms and three C atoms were doped instead of three Al atoms and three N atoms as a central ring in the surface of the Si and C-doped AlNNT. At first both of systems optimized at the level of BLYP method and 6-31G (d) basis set and after that, the NQR parameters were calculated at the level BLYP method and 6-311+G** basis set in two optimized forms. The calculate CQ values for both optimized AlNNT systems, raw and Si and C-doped, reveal different electronic environments in the mentioned systems. It was also demonstrated that the end nuclei have the largest CQ values in both considered AlNNT systems. All the calculations were carried out using Gaussian 98 package of program.

Keywords: DFT, Quadrupole Coupling Constant, Si and CDoping, Single-Walled AlN nanotubes.

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572 Characterization of Responsivity, Sensitivity and Spectral Response in Thin Film SOI photo-BJMOS -FET Compatible with CMOS Technology

Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Jian-Ping Zeng, Tai-Hong Wang

Abstract:

Photo-BJMOSFET (Bipolar Junction Metal-Oxide- Semiconductor Field Effect Transistor) fabricated on SOI film was proposed. ITO film is adopted in the device as gate electrode to reduce light absorption. Depletion region but not inversion region is formed in film by applying gate voltage (but low reverse voltage) to achieve high photo-to-dark-current ratio. Comparisons of photoelectriccharacteristics executed among VGK=0V, 0.3V, 0.6V, 0.9V and 1.0V (reverse voltage VAK is equal to 1.0V for total area of 10×10μm2). The results indicate that the greatest improvement in photo-to-dark-current ratio is achieved up to 2.38 at VGK=0.6V. In addition, photo-BJMOSFET is compatible with CMOS integration due to big input resistance

Keywords: Photo-BJMOSFET, Responsivity, Sensitivity, Spectral response.

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571 Design of Non-uniform Circular Antenna Arrays Using Firefly Algorithm for Side Lobe Level Reduction

Authors: Gopi Ram, Durbadal Mandal, Rajib Kar, Sakti Prasad Ghoshal

Abstract:

A design problem of non-uniform circular antenna arrays for maximum reduction of both the side lobe level (SLL) and first null beam width (FNBW) is dealt with. This problem is modeled as a simple optimization problem. The method of Firefly algorithm (FFA) is used to determine an optimal set of current excitation weights and antenna inter-element separations that provide radiation pattern with maximum SLL reduction and much improvement on FNBW as well. Circular array antenna laid on x-y plane is assumed. FFA is applied on circular arrays of 8-, 10-, and 12- elements. Various simulation results are presented and hence performances of side lobe and FNBW are analyzed. Experimental results show considerable reductions of both the SLL and FNBW with respect to those of the uniform case and some standard algorithms GA, PSO and SA applied to the same problem.

Keywords: Circular arrays, First null beam width, Side lobe level, FFA.

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570 Iron(III)-Tosylate Doped PEDOT and PEG: A Nanoscale Conductivity Study of an Electrochemical System with Biosensing Applications

Authors: Giulio Rosati, Luciano Sappia, Rossana Madrid, Noemi Rozlòsnik

Abstract:

The addition of PEG of different molecular weights has important effects on the physical, electrical and electrochemical properties of iron(III)-tosylate doped PEDOT. This particular polymer can be easily spin coated over plastic discs, optimizing thickness and uniformity of the PEDOT-PEG films. The conductivity and morphological analysis of the hybrid PEDOT-PEG polymer by 4-point probe (4PP), 12-point probe (12PP), and conductive AFM (C-AFM) show strong effects of the PEG doping. Moreover, the conductive films kinetics at the nanoscale, in response to different bias voltages, change radically depending on the PEG molecular weight. The hybrid conductive films show also interesting electrochemical properties, making the PEDOT PEG doping appealing for biosensing applications both for EIS-based and amperometric affinity/catalytic biosensors.

Keywords: Atomic force microscopy, biosensors, four-point probe, nano-films, PEDOT.

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569 Comparative in silico and in vitro Study of N-(1- Methyl-2-Oxo-2-N-Methyl Anilino-Ethyl) Benzene Sulfonamide and Its Analogues as an Anticancer Agent

Authors: Pamita Awasthi, Kirna, Shilpa Dogra, Manu Vatsal, Ritu Barthwal

Abstract:

Doxorubicin, also known as Adriamycin, is an anthracycline class of drug used in cancer chemotherapy. It is used in the treatment of non-Hodgkin’s lymphoma, multiple myeloma, acute leukemia, breast cancer, lung cancer, endometrium cancer and ovary cancers. It functions via intercalating DNA and ultimately killing cancer cells. The major side effects of doxorubicin are hair loss, myelosuppression, nausea & vomiting, oesophagitis, diarrhea, heart damage and liver dysfunction. The minor modifications in the structure of compound exhibit large variation in the biological activity, has prompted us to carry out the synthesis of sulfonamide derivatives. Sulfonamide is an important feature with broad spectrum of biological activity such as antiviral, antifungal, diuretics, antiinflammatory, antibacterial and anticancer activities. Structure of the synthesized compound N-(1-methyl-2-oxo-2-N-methyl anilinoethyl) benzene sulfonamide confirmed by proton nuclear magnetic resonance (1H NMR),13C NMR, Mass and FTIR spectroscopic tools to assure the position of all protons and hence stereochemistry of the molecule. Further we have reported the binding potential of synthesized sulfonamide analogues in comparison to doxorubicin drug using Auto Dock 4.2 software. Computational binding energy (B.E.) and inhibitory constant (Ki) has been evaluated for the synthesized compound in comparison of doxorubicin against Poly (dA-dT).Poly (dA-dT) and Poly (dG-dC).Poly (dG-dC) sequences. The in vitro cytotoxic study against human breast cancer cell lines confirms the better anticancer activity of the synthesized compound over currently in use anticancer drug doxorubicin. The IC50 value of the synthesized compound is 7.12 μM whereas for doxorubicin is 7.2 μM.

Keywords: Anticancer, Auto Dock, Doxorubicin, Sulfonamide.

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568 Specification of Irradiation Conditions in the DONA 5 Rotational Channel of the LVR-15 Reactor

Authors: Zdena Lahodová, Michal Koleška, Ladislav Viererbl

Abstract:

This article summarizes ways to verify neutron fluence for neutron transmutation doping of silicon with phosphorus on the LVR-15 reactor. Neutron fluence is determined using activation detectors placed along the crystal in a strip or encapsulated in a rod holder. Holders are placed at the centre of a water-filled capsule or in an aluminum or silicon ingot that simulates a real single crystal. If the diameter of the crystal is significantly less than the capsule diameter and water from the primary circuit enters the free space in the capsule, neutron interaction in the water changes neutron fluence, affecting axial irradiation homogeneity. The effect of moving the capsule vertically in the channel relative to maximum neutron fluence in the reactor core was also measured. Even a small shift of the capsule-s centre causes great irradiation inhomogeneity. This effect was measured using activation detectors, and was also confirmed by MCNP calculation.

Keywords: Irradiation homogeneity, neutron fluence, neutron transmutation doping, rotational channel.

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567 Modeling the Transport of Charge Carriers in the Active Devices MESFET, Based of GaInP by the Monte Carlo Method

Authors: N. Massoum, A. Guen. Bouazza, B. Bouazza, A. El Ouchdi

Abstract:

The progress of industry integrated circuits in recent years has been pushed by continuous miniaturization of transistors. With the reduction of dimensions of components at 0.1 micron and below, new physical effects come into play as the standard simulators of two dimensions (2D) do not consider. In fact the third dimension comes into play because the transverse and longitudinal dimensions of the components are of the same order of magnitude. To describe the operation of such components with greater fidelity, we must refine simulation tools and adapted to take into account these phenomena. After an analytical study of the static characteristics of the component, according to the different operating modes, a numerical simulation is performed of field-effect transistor with submicron gate MESFET GaInP. The influence of the dimensions of the gate length is studied. The results are used to determine the optimal geometric and physical parameters of the component for their specific applications and uses.

Keywords: Monte Carlo simulation, transient electron transport, MESFET device.

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566 Impact of Height of Silicon Pillar on Vertical DG-MOSFET Device

Authors: K. E. Kaharudin, A. H. Hamidon, F. Salehuddin

Abstract:

Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In order to ensure that the transistor possess a superb turn-off characteristic, the subs-threshold swing (SS) must be kept at minimum value (60-90mV/dec). By utilizing SILVACO TCAD software, an n-channel vertical DG-MOSFET was successfully designed while keeping the sub-threshold swing (SS) value as minimum as possible. From the observation made, the value of sub-threshold swing (SS) was able to be varied by adjusting the height of the silicon pillar. The minimum value of sub-threshold swing (SS) was found to be 64.7mV/dec with threshold voltage (VTH) of 0.895V. The ideal height of the vertical DG-MOSFET pillar was found to be at 0.265 µm.

Keywords: DG-MOSFET, pillar, SCE, vertical

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565 Fast and Efficient Algorithms for Evaluating Uniform and Nonuniform Lagrange and Newton Curves

Authors: Taweechai Nuntawisuttiwong, Natasha Dejdumrong

Abstract:

Newton-Lagrange Interpolations are widely used in numerical analysis. However, it requires a quadratic computational time for their constructions. In computer aided geometric design (CAGD), there are some polynomial curves: Wang-Ball, DP and Dejdumrong curves, which have linear time complexity algorithms. Thus, the computational time for Newton-Lagrange Interpolations can be reduced by applying the algorithms of Wang-Ball, DP and Dejdumrong curves. In order to use Wang-Ball, DP and Dejdumrong algorithms, first, it is necessary to convert Newton-Lagrange polynomials into Wang-Ball, DP or Dejdumrong polynomials. In this work, the algorithms for converting from both uniform and non-uniform Newton-Lagrange polynomials into Wang-Ball, DP and Dejdumrong polynomials are investigated. Thus, the computational time for representing Newton-Lagrange polynomials can be reduced into linear complexity. In addition, the other utilizations of using CAGD curves to modify the Newton-Lagrange curves can be taken.

Keywords: Newton interpolation, Lagrange interpolation, linear complexity.

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564 Burstiness Reduction of a Doubly Stochastic AR-Modeled Uniform Activity VBR Video

Authors: J. P. Dubois

Abstract:

Stochastic modeling of network traffic is an area of significant research activity for current and future broadband communication networks. Multimedia traffic is statistically characterized by a bursty variable bit rate (VBR) profile. In this paper, we develop an improved model for uniform activity level video sources in ATM using a doubly stochastic autoregressive model driven by an underlying spatial point process. We then examine a number of burstiness metrics such as the peak-to-average ratio (PAR), the temporal autocovariance function (ACF) and the traffic measurements histogram. We found that the former measure is most suitable for capturing the burstiness of single scene video traffic. In the last phase of this work, we analyse statistical multiplexing of several constant scene video sources. This proved, expectedly, to be advantageous with respect to reducing the burstiness of the traffic, as long as the sources are statistically independent. We observed that the burstiness was rapidly diminishing, with the largest gain occuring when only around 5 sources are multiplexed. The novel model used in this paper for characterizing uniform activity video was thus found to be an accurate model.

Keywords: AR, ATM, burstiness, doubly stochastic, statisticalmultiplexing.

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563 Characterization of the LMOS with Different Channel Structure

Authors: Hung-Pei Hsu, Jyi-Tsong Lin, Po-Hsieh Lin, Cheng-Hsien Chang, Ming-Tsung Shih, Chan-Hsiang Chang, Shih-Chuan Tseng, Min-Yan Lin, Shih-Wen Hsu

Abstract:

In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Keywords: Average gate length (Lavg), drain-induced barrier lowering (DIBL), L-shaped channel MOSFET (LMOS), subthreshold swing (S.S.).

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562 A Survey of Field Programmable Gate Array-Based Convolutional Neural Network Accelerators

Authors: Wei Zhang

Abstract:

With the rapid development of deep learning, neural network and deep learning algorithms play a significant role in various practical applications. Due to the high accuracy and good performance, Convolutional Neural Networks (CNNs) especially have become a research hot spot in the past few years. However, the size of the networks becomes increasingly large scale due to the demands of the practical applications, which poses a significant challenge to construct a high-performance implementation of deep learning neural networks. Meanwhile, many of these application scenarios also have strict requirements on the performance and low-power consumption of hardware devices. Therefore, it is particularly critical to choose a moderate computing platform for hardware acceleration of CNNs. This article aimed to survey the recent advance in Field Programmable Gate Array (FPGA)-based acceleration of CNNs. Various designs and implementations of the accelerator based on FPGA under different devices and network models are overviewed, and the versions of Graphic Processing Units (GPUs), Application Specific Integrated Circuits (ASICs) and Digital Signal Processors (DSPs) are compared to present our own critical analysis and comments. Finally, we give a discussion on different perspectives of these acceleration and optimization methods on FPGA platforms to further explore the opportunities and challenges for future research. More helpfully, we give a prospect for future development of the FPGA-based accelerator.

Keywords: Deep learning, field programmable gate array, FPGA, hardware acceleration, convolutional neural networks, CNN.

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561 Simulation Modeling and Analysis of In-Plant Logistics at a Cement Manufacturing Plant in India

Authors: Sachin Kamble, Shradha Gawankar

Abstract:

This paper presents the findings of successful implementation of Business Process Reengineering (BPR) of cement dispatch activities in a cement manufacturing plant located in India. Simulation model was developed for the purpose of identifying and analyzing the areas for improvement. The company was facing a problem of low throughput rate and subsequent forced stoppages of the plant leading to a high production loss of 15000MT per month. It was found from the study that the present systems and procedures related to the in-plant logistics plant required significant changes. The major recommendations included process improvement at the entry gate, reducing the cycle time at the security gate and installation of an additional weigh bridge. This paper demonstrates how BPR can be implemented for improving the in-plant logistics process. Various recommendations helped the plant to increase its throughput by 14%.

Keywords: Business process reengineering, simulation modeling, in-plant logistics, distribution process, cement industry.

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560 Performance Analysis of OQSMS and MDDR Scheduling Algorithms for IQ Switches

Authors: K. Navaz, Kannan Balasubramanian

Abstract:

Due to the increasing growth of internet users, the emerging applications of multicast are growing day by day and there is a requisite for the design of high-speed switches/routers. Huge amounts of effort have been done into the research area of multicast switch fabric design and algorithms. Different traffic scenarios are the influencing factor which affect the throughput and delay of the switch. The pointer based multicast scheduling algorithms are not performed well under non-uniform traffic conditions. In this work, performance of the switch has been analyzed by applying the advanced multicast scheduling algorithm OQSMS (Optimal Queue Selection Based Multicast Scheduling Algorithm), MDDR (Multicast Due Date Round-Robin Scheduling Algorithm) and MDRR (Multicast Dual Round-Robin Scheduling Algorithm). The results show that OQSMS achieves better switching performance than other algorithms under the uniform, non-uniform and bursty traffic conditions and it estimates optimal queue in each time slot so that it achieves maximum possible throughput.

Keywords: Multicast, Switch, Delay, Scheduling.

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559 On Optimum Stratification

Authors: M. G. M. Khan, V. D. Prasad, D. K. Rao

Abstract:

In this manuscript, we discuss the problem of determining the optimum stratification of a study (or main) variable based on the auxiliary variable that follows a uniform distribution. If the stratification of survey variable is made using the auxiliary variable it may lead to substantial gains in precision of the estimates. This problem is formulated as a Nonlinear Programming Problem (NLPP), which turn out to multistage decision problem and is solved using dynamic programming technique.

Keywords: Auxiliary variable, Dynamic programming technique, Nonlinear programming problem, Optimum stratification, Uniform distribution.

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558 A New Sufficient Conditions of Stability for Discrete Time Non-autonomous Delayed Hopfield Neural Networks

Authors: Adnene Arbi, Chaouki Aouiti, Abderrahmane Touati

Abstract:

In this paper, we consider the uniform asymptotic stability, global asymptotic stability and global exponential stability of the equilibrium point of discrete Hopfield neural networks with delays. Some new stability criteria for system are derived by using the Lyapunov functional method and the linear matrix inequality approach, for estimating the upper bound of Lyapunov functional derivative.

Keywords: Hopfield neural networks, uniform asymptotic stability, global asymptotic stability, exponential stability.

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557 A Comparison of Some Splines-Based Methods for the One-dimensional Heat Equation

Authors: Joan Goh, Ahmad Abd. Majid, Ahmad Izani Md. Ismail

Abstract:

In this paper, collocation based cubic B-spline and extended cubic uniform B-spline method are considered for solving one-dimensional heat equation with a nonlocal initial condition. Finite difference and θ-weighted scheme is used for time and space discretization respectively. The stability of the method is analyzed by the Von Neumann method. Accuracy of the methods is illustrated with an example. The numerical results are obtained and compared with the analytical solutions.

Keywords: Heat equation, Collocation based, Cubic Bspline, Extended cubic uniform B-spline.

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556 Design and Implementation of 4 Bit Multiplier Using Fault Tolerant Hybrid Full Adder

Authors: C. Kalamani, V. Abishek Karthick, S. Anitha, K. Kavin Kumar

Abstract:

The fault tolerant system plays a crucial role in the critical applications which are being used in the present scenario. A fault may change the functionality of circuits. Aim of this paper is to design multiplier using fault tolerant hybrid full adder. Fault tolerant hybrid full adder is designed to check and repair any fault in the circuit using self-checking circuit and the self-repairing circuit. Further, the use of conventional logic circuits may result in more area, delay as well as power consumption. In order to reduce these parameters of the circuit, GDI (Gate Diffusion Input) techniques with less number of transistors are used compared to conventional full adder circuit. This reduces the area, delay and power consumption. The proposed method solves the major problems occurring in the most crucial and critical applications.

Keywords: Gate diffusion input, hybrid full adder, self-checking, fault tolerant.

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555 Fabrication and Electrical Characterization of Al/BaxSr1-xTiO3/Pt/SiO2/Si Configuration for FeFET Applications

Authors: Ala'eddin A. Saif , Z. A. Z. Jamal, Z. Sauli, P. Poopalan

Abstract:

The ferroelectric behavior of barium strontium titanate (BST) in thin film form has been investigated in order to study the possibility of using BST for ferroelectric gate-field effect transistor (FeFET) for memory devices application. BST thin films have been fabricated as Al/BST/Pt/SiO2/Si-gate configuration. The variation of the dielectric constant (ε) and tan δ with frequency have been studied to ensure the dielectric quality of the material. The results show that at low frequencies, ε increases as the Ba content increases, whereas at high frequencies, it shows the opposite variation, which is attributed to the dipole dynamics. tan δ shows low values with a peak at the mid-frequency range. The ferroelectric behavior of the Al/BST/Pt/SiO2/Si has been investigated using C-V characteristics. The results show that the strength of the ferroelectric hysteresis loop increases as the Ba content increases; this is attributed to the grain size and dipole dynamics effect.

Keywords: BST thin film, Electrical properties, Ferroelectrichysteresis, Ferroelectric FET.

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