Search results for: CMOS gate modeling

Authors: Ahmet Turer

Abstract:

Middle-gate is located in Hasankeyf, Batman dating back to 1800 BC and is one of the important historical structures in Turkey. The ancient structure has suffered major structural cracks due to aging as well as lateral pressure of a cracked rock which is predicted to be about 100 tons. The existing support system was found to be inadequate to support the load especially after a recent rock fall in the close vicinity. Concerns were increased since the existing support system that is integral with a damaged and cracked gate wall needed to be replaced by a new support system. The replacement process must be carefully monitored by crackmeters and control mechanisms should be integrated to prevent cracks to expand while the same crack width needs to be maintained after the operation. The control system and actions taken during the intervention are explained in this paper.

Keywords: structural control, crack width, replacement, support

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Authors: E. Farshidi

Abstract:

In this paper, based on a novel synthesis, a set of new simplified circuit design to implement the linguistic-hedge operations for adjusting the fuzzy membership function set is presented. The circuits work in current-mode and employ floating-gate MOS (FGMOS) transistors that operate in weak inversion region. Compared to the other proposed circuits, these circuits feature severe reduction of the elements number, low supply voltage (0.7V), low power consumption (<200nW), immunity from body effect and wide input dynamic range (>60dB). In this paper, a set of fuzzy linguistic hedge circuits, including absolutely, very, much more, more, plus minus, more or less and slightly, has been implemented in 0.18 mm CMOS process. Simulation results by Hspice confirm the validity of the proposed design technique and show high performance of the circuits.

Keywords: Current-mode, Linguistic-Hedge, Fuzzy Logic, lowpower

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Authors: J. S. Kim

Abstract:

This paper presents a 0.13-µm Complementary Metal-Oxide Semiconductor (CMOS) vector modulator for beamforming system. The vector modulator features a 360° phase and gain range of -10 dB to 10 dB with a root mean square phase and amplitude error of only 2.2° and 0.45 dB, respectively. These features make it a suitable for wireless backhaul system in the 5 GHz industrial, scientific, and medical (ISM) bands. It draws a current of 20.4 mA from a 1.2 V supply. The total chip size is 1.87x1.34 mm².

Keywords: CMOS, vector modulator, beamforming, wireless backhaul, ISM.

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Authors: Zia Abbas, Giuseppe Scotti, Mauro Olivieri

Abstract:

Current mode circuits like current conveyors are getting significant attention in current analog ICs design due to their higher band-width, greater linearity, larger dynamic range, simpler circuitry, lower power consumption and less chip area. The second generation current controlled conveyor (CCCII) has the advantage of electronic adjustability over the CCII i.e. in CCCII; adjustment of the X-terminal intrinsic resistance via a bias current is possible. The presented approach is based on the CMOS implementation of second generation positive (CCCII+), negative (CCCII-) and dual Output Current Controlled Conveyor (DOCCCII) and its application as Universal filter. All the circuits have been designed and simulated using 65nm CMOS technology model parameters on Cadence Virtuoso / Spectre using 1V supply voltage. Various simulations have been carried out to verify the linearity between output and input ports, range of operation frequency, etc. The outcomes show good agreement between expected and experimental results.

Keywords: CCCII+, CCCII-, DOCCCII, Electronic tunability, Universal filter

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Authors: Arash Azizi Mazreah, Mohammad T. Manzuri Shalmani, Hamid Barati, Ali Barati

Abstract:

This paper presents a novel CMOS four-transistor SRAM cell for very high density and low power embedded SRAM applications as well as for stand-alone SRAM applications. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 20% smaller than a conventional six-transistor cell using same design rules. Also proposed cell uses two word-lines and one pair bit-line. Read operation perform from one side of cell, and write operation perform from another side of cell, and swing voltage reduced on word-lines thus dynamic power during read/write operation reduced. The fabrication process is fully compatible with high-performance CMOS logic technologies, because there is no need to integrate a poly-Si resistor or a TFT load. HSPICE simulation in standard 0.25μm CMOS technology confirms all results obtained from this paper.

Keywords: Positive feedback, leakage current, read operation, write operation, dynamic energy consumption.

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Authors: Z. Harouni, L. Osman, M. Yeddes, A. Gharsallah, H. Baudrand

Abstract:

In this paper, an efficient wave concept iterative process (WCIP) with auxiliary Sources is presented for full wave investigation of an active microwave structure on micro strip technology. Good agreement between the experimental and simulation results is observed.

Keywords: WCIP, Dual-Gate Transistor, Auxiliary source.

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Authors: Kariyappa B. S., Hariprasad S. A., R. Nagaraj

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In this paper, a new method of controlling position of AC Servomotor using Field Programmable Gate Array (FPGA). FPGA controller is used to generate direction and the number of pulses required to rotate for a given angle. Pulses are sent as a square wave, the number of pulses determines the angle of rotation and frequency of square wave determines the speed of rotation. The proposed control scheme has been realized using XILINX FPGA SPARTAN XC3S400 and tested using MUMA012PIS model Alternating Current (AC) servomotor. Experimental results show that the position of the AC Servo motor can be controlled effectively. KeywordsAlternating Current (AC), Field Programmable Gate Array (FPGA), Liquid Crystal Display (LCD).

Keywords: Alternating Current (AC), Field Programmable Gate Array (FPGA), Liquid Crystal Display (LCD).

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Authors: Y. Ni, K. Sebri

Abstract:

The practical implementation of audio-video coupled speech recognition systems is mainly limited by the hardware complexity to integrate two radically different information capturing devices with good temporal synchronisation. In this paper, we propose a solution based on a smart CMOS image sensor in order to simplify the hardware integration difficulties. By using on-chip image processing, this smart sensor can calculate in real time the X/Y projections of the captured image. This on-chip projection reduces considerably the volume of the output data. This data-volume reduction permits a transmission of the condensed visual information via the same audio channel by using a stereophonic input available on most of the standard computation devices such as PC, PDA and mobile phones. A prototype called VMIKE (Visio-Microphone) has been designed and realised by using standard 0.35um CMOS technology. A preliminary experiment gives encouraged results. Its efficiency will be further investigated in a large variety of applications such as biometrics, speech recognition in noisy environments, and vocal control for military or disabled persons, etc.

Keywords: Audio-Visual Speech recognition, CMOS Smartsensor, On-Chip image processing.

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Authors: Sanghoon Park, Kijin Kim, Kwangho Ahn

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An active RC filters with a 880 / 1760 MHz dual bandwidth tuning ability is present for 60 GHz unlicensed band applications. A third order Butterworth low-pass filter utilizes two Cherry-Hooper amplifiers to satisfy the very high bandwidth requirements of an amplifier. The low-pass filter is fabricated in 90nm standard CMOS process. Drawing 6.7 mW from 1.2 V power supply, the low frequency gains of the filter are -2.5 and -4.1 dB, and the output third order intercept points (OIP3) are +2.2 and +1.9 dBm for the single channel and channel bonding conditions, respectively.

Keywords: Butterworth filter, active RC, 60 GHz, CMOS, dual bandwidth, Cherry-Hooper amplifier.

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Authors: Ebrahim Farshidi

Abstract:

This paper presents a new circuit arrangement for a current-mode Wheatstone bridge that is suitable for low-voltage integrated circuits implementation. Compared to the other proposed circuits, this circuit features severe reduction of the elements number, low supply voltage (1V) and low power consumption (<350uW). In addition, the circuit has favorable nonlinearity error (<0.35%), operate with multiple sensors and works by single supply voltage. The circuit employs MOSFET transistors, so it can be used for standard CMOS fabrication. Simulation results by HSPICE show high performance of the circuit and confirm the validity of the proposed design technique.

Keywords: Wheatstone bridge, current-mode, low-voltage, MOS.

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Authors: Shipra Upadhyay , R. K. Nagaria, R. A. Mishra

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In this paper, we present the design and experimental evaluation of complementary energy path adiabatic logic (CEPAL) based 1 bit full adder circuit. A simulative investigation on the proposed full adder has been done using VIRTUOSO SPECTRE simulator of cadence in 0.18μm UMC technology and its performance has been compared with the conventional CMOS full adder circuit. The CEPAL based full adder circuit exhibits the energy saving of 70% to the conventional CMOS full adder circuit, at 100 MHz frequency and 1.8V operating voltage.

Keywords: Adiabatic, CEPAL, full adder, power clock

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Authors: F. Rarbi, D. Dzahini, W. Uhring

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In this paper, a dynamic and power efficient 8-bit and 100-MSPS Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) is presented. The circuit uses a non-differential capacitive Digital-to-Analog (DAC) architecture segmented by 2. The prototype is produced in a commercial 65-nm 1P7M CMOS technology with 1.2-V supply voltage. The size of the core ADC is 208.6 x 103.6 µm². The post-layout noise simulation results feature a SNR of 46.9 dB at Nyquist frequency, which means an effective number of bit (ENOB) of 7.5-b. The total power consumption of this SAR ADC is only 1.55 mW at 100-MSPS. It achieves then a figure of merit of 85.6 fJ/step.

Keywords: CMOS analog to digital converter, dynamic comparator, image sensor application, successive approximation register.

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Authors: Shiyang Zhu, G. Q. Lo, D. L. Kwong

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Silicon photonics is merging as a unified platform for driving photonic based telecommunications and for local photonic based interconnect but it suffers from large footprint as compared with the nanoelectronics. Plasmonics is an attractive alternative for nanophotonics. In this work, two CMOS compatible plasmonic waveguide platforms are compared. One is the horizontal metal-insulator-Si-insulator-metal nanoplasmonic waveguide and the other is metal-insulator-Si hybrid plasmonic waveguide. Various passive and active photonic devices have been experimentally demonstrated based on these two plasmonic waveguide platforms.

Keywords: Plasmonics, on-chip integration, Silicon photonics.

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Authors: Raheleh Hedayati, Sanaz Haddadian, Hooman Nabovati

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A 2.4GHz (RF) down conversion Gilbert Cell mixer, implemented in a 0.18-μm CMOS technology with a 1.8V supply, is presented. Current bleeding (charge injection) technique has been used to increase the conversion gain and the linearity of the mixer. The proposed mixer provides 10.75 dB conversion gain ( C G ) with 14.3mw total power consumption. The IIP3 and 1-dB compression point of the mixer are 8dbm and -4.6dbm respectively, at 300 MHz IF frequencies. Comparing the current design against the conventional mixer design, demonstrates better performance in the conversion gain, linearity, noise figure and port-to-port isolation.

Keywords: Mixer, Gilbert Cell, Charge Injection, RFIC, CMOSTechnology.

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Authors: Azza M. Anis, M. M. Abutaleb, Hani F. Ragai, M. I. Eladawy

Abstract:

This paper presents the characterization and design of a capacitive pressure sensor with LC-based 0.35 µm CMOS readout circuit. SPICE is employed to evaluate the characteristics of the readout circuit and COMSOL multiphysics structural analysis is used to simulate the behavior of the pressure sensor. The readout circuit converts the capacitance variation of the pressure sensor into the frequency output. Simulation results show that the proposed pressure sensor has output frequency from 2.50 to 2.28 GHz in a pressure range from 0.1 to 2 MPa almost linearly. The sensitivity of the frequency shift with respect to the applied pressure load is 0.11 GHz/MPa.

Keywords: CMOS LC-based oscillator, micro pressure sensor, silicon carbide

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Authors: Ebrahim Safarian, Kadir Bilen, Akif Ceviz

Abstract:

The turbocharger and turbocharging have been the inherent component of diesel engines, so that critical parameters of such engines, as BSFC (Brake Specific Fuel Consumption) or thermal efficiency, fuel consumption, BMEP (Brake Mean Effective Pressure), the power density output and emission level have been improved extensively. In general, the turbocharger can be considered as the most complex component of diesel engines, because it has closely interrelated turbomachinery concepts of the turbines and the compressors to thermodynamic fundamentals of internal combustion engines and stress analysis of all components. In this paper, a waste gate for a conventional single stage radial turbine is investigated by consideration of turbochargers operation constrains and engine operation conditions, without any detail designs in the turbine and the compressor. Amount of opening waste gate which extended between the ranges of full opened and closed valve, is demonstrated by limiting compressor boost pressure ratio. Obtaining of an optimum point by regard above mentioned items is surveyed by three linked meanline modeling programs together which consist of Turbomatch®, Compal®, Rital® madules in concepts NREC® respectively.

Keywords: Turbocharger, Wastegate, diesel engine, CONCEPT NREC programs.

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Authors: Mehdi Moayyedian, Kazem Abhary, Romeo Marian

Abstract:

This paper presents an evaluation of a plastic defect in injection molding before it occurs in the process; it is known as the short shot defect. The evaluation of different parameters which affect the possibility of short shot defect is the aim of this paper. The analysis of short shot possibility is conducted via SolidWorks Plastics and Taguchi method to determine the most significant parameters. Finite Element Method (FEM) is employed to analyze two circular flat polypropylene plates of 1 mm thickness. Filling time, part cooling time, pressure holding time, melt temperature and gate type are chosen as process and geometric parameters, respectively. A methodology is presented herein to predict the possibility of the short-shot occurrence. The analysis determined melt temperature is the most influential parameter affecting the possibility of short shot defect with a contribution of 74.25%, and filling time with a contribution of 22%, followed by gate type with a contribution of 3.69%. It was also determined the optimum level of each parameter leading to a reduction in the possibility of short shot are gate type at level 1, filling time at level 3 and melt temperature at level 3. Finally, the most significant parameters affecting the possibility of short shot were determined to be melt temperature, filling time, and gate type.

Keywords: Injection molding, plastic defects, short shot, Taguchi method.

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Authors: Gianluca Cornetta, David J. Santos

Abstract:

This paper describes a 2.4 GHz passive switch mixer and a 5/2.5 GHz voltage-controlled negative Gm oscillator (VCO) with an inversion-mode MOS varactor. Both circuits are implemented using a 1P8M 0.13 μm process. The switch mixer has an input referred 1 dB compression point of -3.89 dBm and a conversion gain of -0.96 dB when the local oscillator power is +2.5 dBm. The VCO consumes only 1.75 mW, while drawing 1.45 mA from a 1.2 V supply voltage. In order to reduce the passives size, the VCO natural oscillation frequency is 5 GHz. A clocked CMOS divideby- two circuit is used for frequency division and quadrature phase generation. The VCO has a -109 dBc/Hz phase noise at 1 MHz frequency offset and a 2.35-2.5 GHz tuning range (after the frequency division), thus complying with ZigBee requirements.

Keywords: Switch Mixers, Varactors, IEEE 802.15.4 (ZigBee), Direct Conversion Receiver, Wireless Sensor Networks.

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Authors: Indre Brazauskaite, Vilte Auruskeviciene

Abstract:

The paper explores the Stage-Gate framework application for innovation maturity among small and medium-sized enterprises (SMEs). Innovation management becomes an essential business survival process for all sizes of organizations that can be evaluated and audited systemically. This research systemically defines and assesses the innovation process from the perspective of the company’s top management. Empirical research explores attitudes and existing practices of innovation management in SMEs in Baltic countries. It structurally investigates the current innovation management practices, level of standardization, and potential challenges in the area. Findings allow to structure of existing practices based on an institutionalized model and contribute to a more advanced understanding of the innovation process among SMEs. Practically, findings contribute to advanced decision-making and business planning in the process.

Keywords: innovation measure, innovation process, small and medium-sized enterprises, SMEs, stage-gate framework.

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Authors: Nur Syarafina Binti Othman, Tsubasa Jindo, Makato Yamada, Miho Tsuyama, Hitoshi Nakano

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A novel method to produce a fast high voltage solid states switch using Insulated Gate Bipolar Transistors (IGBTs) is presented for discharge-pumped gas lasers. The IGBTs are connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. The fast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast high-voltage pulse. The switching characteristic of fast-high voltage solid state switch has been estimated in the multi-stage series-connected IGBT with the applied voltage of several tens of kV. Electrical circuit diagram and the mythology of fast-high voltage solid state switch as well as experimental results obtained are presented.

Keywords: High voltage, IGBT, Solid states switch.

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Authors: H. Daoud Dammak, S. Bensalem, S. Zouari, M. Loulou

Abstract:

This paper presents an optimized methodology to folded cascode operational transconductance amplifier (OTA) design. The design is done in different regions of operation, weak inversion, strong inversion and moderate inversion using the gm/ID methodology in order to optimize MOS transistor sizing. Using 0.35μm CMOS process, the designed folded cascode OTA achieves a DC gain of 77.5dB and a unity-gain frequency of 430MHz in strong inversion mode. In moderate inversion mode, it has a 92dB DC gain and provides a gain bandwidth product of around 69MHz. The OTA circuit has a DC gain of 75.5dB and unity-gain frequency limited to 19.14MHZ in weak inversion region.

Keywords: CMOS IC design, Folded Cascode OTA, gm/ID methodology, optimization.

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Authors: Chil-Chyuan Kuo, Chen-Hsuan Tsai

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This study presents a cost-effective approach for rapid fabricating modeling platforms utilized in fused deposition modeling system. A small-batch production of modeling platforms about 20 pieces can be obtained economically through silicone rubber mold using vacuum casting without applying the plastic injection molding. The air venting systems is crucial for fabricating modeling platform using vacuum casting. Modeling platforms fabricated can be used for building rapid prototyping model after sandblasting. This study offers industrial value because it has both time-effectiveness and cost-effectiveness.

Keywords: Vacuum casting, fused deposition modeling, modeling platform, sandblasting, surface roughness.

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Authors: Muhaned Zaidi, Ian Grout, Abu Khari bin A’ain

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In this paper, a two-stage op-amp design is considered using both Miller and negative Miller compensation techniques. The first op-amp design uses Miller compensation around the second amplification stage, whilst the second op-amp design uses negative Miller compensation around the first stage and Miller compensation around the second amplification stage. The aims of this work were to compare the gain and phase margins obtained using the different compensation techniques and identify the ability to choose either compensation technique based on a particular set of design requirements. The two op-amp designs created are based on the same two-stage rail-to-rail output CMOS op-amp architecture where the first stage of the op-amp consists of differential input and cascode circuits, and the second stage is a class AB amplifier. The op-amps have been designed using a 0.35mm CMOS fabrication process.

Keywords: Op-amp, rail-to-rail output, Miller compensation, negative Miller capacitance.

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Authors: Jong-Bae Lee, Seongsoo Lee

Abstract:

Local interconnect network (LIN) is a communication protocol that combines sensors, actuators, and processors to a functional module in automotive applications. In this paper, a LIN ver. 2.2A controller was designed in Verilog hardware description language (Verilog HDL) and implemented in field-programmable gate array (FPGA). Its operation was verified by making full-scale LIN network with the presented FPGA-implemented LIN controller, commercial LIN transceivers, and commercial processors. When described in Verilog HDL and synthesized in 0.18 μm technology, its gate size was about 2,300 gates.

Keywords: Local interconnect network, controller, transceiver, processor.

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Authors: Jae Hyung Noh, Hang Geun Jeong

Abstract:

The charge-pump circuit is an important component in a phase-locked loop (PLL). The charge-pump converts Up and Down signals from the phase/frequency detector (PFD) into current. A conventional CMOS charge-pump circuit consists of two switched current sources that pump charge into or out of the loop filter according to two logical inputs. The mismatch between the charging current and the discharging current causes phase offset and reference spurs in a PLL. We propose a new charge-pump circuit to reduce the current mismatch by using a regulated cascode circuit. The proposed charge-pump circuit is designed and simulated by spectre with TSMC 0.18-μm 1.8-V CMOS technology.

Keywords: Phase-locked loop (PLL), charge-pump, phase/frequency detector (PFD), regulated cascode.

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Authors: D. Krishnaveni, M. Geetha Priya

Abstract:

Applications of reversible logic gates in the design of complex integrated circuits provide power optimization.  This technique finds a great use in low power CMOS design, optical computing, quantum computing and nanotechnology. This paper proposes a reversible signed division circuit that can divide an n-bit signed dividend with an n-bit signed divisor using non-restoration division logic. The proposed design adequately addresses the ‘delay’ there by improving the efficiency of the circuit. An attempt is made to design a reversible signed division circuit. This paper provides a threshold to build more complex arithmetic systems using reversible logic, thus increasing the performance of computing systems.

Keywords: Low power CMOS, quantum computing, reversible logic gates, shift register, signed division.

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Authors: Hani Baek, Gwang Min Sun, Chansun Shin, Sung Ho Ahn

Abstract:

Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO₂ interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.

Keywords: NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center.

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Authors: Pradip Peter Dey, Bhaskar Raj Sinha, Mohammad Amin, Hassan Badkoobehi

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Mathematical, graphical and intuitive models are often constructed in the development process of computational systems. The Unified Modeling Language (UML) is one of the most popular modeling languages used by practicing software engineers. This paper critically examines UML models and suggests an augmented use case view with the addition of new constructs for modeling software. It also shows how a use case diagram can be enhanced. The improved modeling constructs are presented with examples for clarifying important design and implementation issues.

Keywords: Software architecture, software design, Unified Modeling Language (UML), user interface.

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Authors: Syed Islam, Yiyun Huang, Sebastian Magierowski, Ebrahim Ghafar-Zadeh

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This paper presents system level CMOS solid-state nanopore techniques enhancement for speedup next generation molecular recording and high throughput channels. This discussion also considers optimum number of base-pair (bp) measurements through channel as an important role to enhance potential read accuracy. Effective power consumption estimation offered suitable range of multi-channel configuration. Nanopore bp extraction model in statistical method could contribute higher read accuracy with longer read-length (200 < read-length). Nanopore ionic current switching with Time Multiplexing (TM) based multichannel readout system contributed hardware savings.

Keywords: DNA, Nanopore, Amplifier, ADC, Multichannel.

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Authors: Nasser Erfani Majd, Mojtaba Lotfizad

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In this paper, an ultra low power and low jitter 12bit CMOS digitally controlled oscillator (DCO) design is presented. Based on a ring oscillator implemented with low power Schmitt trigger based inverters. Simulation of the proposed DCO using 32nm CMOS Predictive Transistor Model (PTM) achieves controllable frequency range of 550MHz~830MHz with a wide linearity and high resolution. Monte Carlo simulation demonstrates that the time-period jitter due to random power supply fluctuation is under 31ps and the power consumption is 0.5677mW at 750MHz with 1.2V power supply and 0.53-ps resolution. The proposed DCO has a good robustness to voltage and temperature variations and better linearity comparing to the conventional design.

Keywords: digitally controlled oscillator (DCO), low power, jitter; good linearity, robust

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