Search results for: high voltage transformer
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 6425

Search results for: high voltage transformer

5975 Replacing MOSFETs with Single Electron Transistors (SET) to Reduce Power Consumption of an Inverter Circuit

Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

Abstract:

According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling.

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5974 Quasi Multi-Pulse Back-to-Back Static Synchronous Compensator Employing Line Frequency Switching 2-Level GTO Inverters

Authors: A.M. Vural, K.C. Bayindir

Abstract:

Back-to-back static synchronous compensator (BtBSTATCOM) consists of two back-to-back voltage-source converters (VSC) with a common DC link in a substation. This configuration extends the capabilities of conventional STATCOM that bidirectional active power transfer from one bus to another is possible. In this paper, VSCs are designed in quasi multi-pulse form in which GTOs are triggered only once per cycle in PSCAD/EMTDC. The design details of VSCs as well as gate switching circuits and controllers are fully represented. Regulation modes of BtBSTATCOM are verified and tested on a multi-machine power system through different simulation cases. The results presented in the form of typical time responses show that practical PI controllers are almost robust and stable in case of start-up, set-point change, and line faults.

Keywords: Flexible AC Transmission Systems (FACTS), Backto-Back Static Synchronous Compensator (BtB-STATCOM), quasi multi-pulse voltage source converter, active power transfer; voltage control.

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5973 Evaluation of the Power Generation Effect Obtained by Inserting a Piezoelectric Sheet in the Backlash Clearance of a Circular Arc Helical Gear

Authors: Barenten Suciu, Yuya Nakamoto

Abstract:

Power generation effect, obtained by inserting a piezo- electric sheet in the backlash clearance of a circular arc helical gear, is evaluated. Such type of screw gear is preferred since, in comparison with the involute tooth profile, the circular arc profile leads to reduced stress-concentration effects, and improved life of the piezoelectric film. Firstly, geometry of the circular arc helical gear, and properties of the piezoelectric sheet are presented. Then, description of the test-rig, consisted of a right-hand thread gear meshing with a left-hand thread gear, and the voltage measurement procedure are given. After creating the tridimensional (3D) model of the meshing gears in SolidWorks, they are 3D-printed in acrylonitrile butadiene styrene (ABS) resin. Variation of the generated voltage versus time, during a meshing cycle of the circular arc helical gear, is measured for various values of the center distance. Then, the change of the maximal, minimal, and peak-to-peak voltage versus the center distance is illustrated. Optimal center distance of the gear, to achieve voltage maximization, is found and its significance is discussed. Such results prove that the contact pressure of the meshing gears can be measured, and also, the electrical power can be generated by employing the proposed technique.

Keywords: Power generation, circular arc helical gear, piezo- electric sheet, contact problem, optimal center distance.

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5972 Design and Analysis of a Low Power High Speed 1 Bit Full Adder Cell Based On TSPC Logic with Multi-Threshold CMOS

Authors: Ankit Mitra

Abstract:

An adder is one of the most integral component of a digital system like a digital signal processor or a microprocessor. Being an extremely computationally intensive part of a system, the optimization for speed and power consumption of the adder is of prime importance. In this paper we have designed a 1 bit full adder cell based on dynamic TSPC logic to achieve high speed operation. A high threshold voltage sleep transistor is used to reduce the static power dissipation in standby mode. The circuit is designed and simulated in TSPICE using TSMC 180nm CMOS process. Average power consumption, delay and power-delay product is measured which showed considerable improvement in performance over the existing full adder designs.

Keywords: CMOS, TSPC, MTCMOS, ALU, Clock gating, power gating, pipelining.

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5971 A Direct Down-conversion Receiver for Low-power Wireless Sensor Networks

Authors: Gianluca Cornetta, Abdellah Touhafi, David J. Santos, Jose Manuel Vazquez

Abstract:

A direct downconversion receiver implemented in 0.13 μm 1P8M process is presented. The circuit is formed by a single-end LNA, an active balun for conversion into balanced mode, a quadrature double-balanced passive switch mixer and a quadrature voltage-controlled oscillator. The receiver operates in the 2.4 GHz ISM band and complies with IEEE 802.15.4 (ZigBee) specifications. The circuit exhibits a very low noise figure of only 2.27 dB and dissipates only 14.6 mW with a 1.2 V supply voltage and is hence suitable for low-power applications.

Keywords: LNA, Active Balun, Passive Mixer, VCO, IEEE 802.15.4(ZigBee).

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5970 Hysteresis Modulation Based Sliding Mode Control for Positive Output Elementary Super Lift Luo Converter

Authors: K. Ramash Kumar, S. Jeevananthan

Abstract:

The Object of this paper is to design and analyze a Hysteresis modulation based sliding mode control (HMSMC) for positive output elementary super lift Luo converter (POESLLC), which is the start-of-the-art DC-DC converter. The positive output elementary super lift Luo converter performs the voltage conversion from positive source voltage to positive load voltage. This paper proposes a HMSMC capable of providing the good steady state and dynamic performance compared to conventional controllers. Dynamic equations describing the positive output elementary super lift luo converter are derived by using state space average method. The simulation model of the positive output elementary super lift Luo converter with its control circuit is implemented in Matlab/Simulink. The HMSMC for positive output elementary super lift Luo converter is tested for line changes, load changes and also for components variations.

Keywords: DC-DC converter, Positive output elementarysuper lift Luo converter (POESLLC), Hysteresis modulation basedsliding mode control (HMSMC).

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5969 Analysis and Circuit Modeling of APDs

Authors: A. Ahadpour Shal, A. Ghadimi, A. Azadbar

Abstract:

In this paper a new method for increasing the speed of SAGCM-APD is proposed. Utilizing carrier rate equations in different regions of the structure, a circuit model for the structure is obtained. In this research, in addition to frequency response, the effect of added new charge layer on some transient parameters like slew-rate, rising and falling times have been considered. Finally, by trading-off among some physical parameters such as different layers widths and droppings, a noticeable decrease in breakdown voltage has been achieved. The results of simulation, illustrate some features of proposed structure improvement in comparison with conventional SAGCM-APD structures.

Keywords: Optical communication systems (OCS), Circuit modeling, breakdown voltage, SAGCM APD

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5968 Artificial Neural Networks Application to Improve Shunt Active Power Filter

Authors: Rachid.Dehini, Abdesselam.Bassou, Brahim.Ferdi

Abstract:

Active Power Filters (APFs) are today the most widely used systems to eliminate harmonics compensate power factor and correct unbalanced problems in industrial power plants. We propose to improve the performances of conventional APFs by using artificial neural networks (ANNs) for harmonics estimation. This new method combines both the strategies for extracting the three-phase reference currents for active power filters and DC link voltage control method. The ANNs learning capabilities to adaptively choose the power system parameters for both to compute the reference currents and to recharge the capacitor value requested by VDC voltage in order to ensure suitable transit of powers to supply the inverter. To investigate the performance of this identification method, the study has been accomplished using simulation with the MATLAB Simulink Power System Toolbox. The simulation study results of the new (SAPF) identification technique compared to other similar methods are found quite satisfactory by assuring good filtering characteristics and high system stability.

Keywords: Artificial Neural Networks (ANN), p-q theory, (SAPF), Harmonics, Total Harmonic Distortion.

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5967 Design a Low Voltage- Low Offset Class AB Op-Amp

Authors: B.Gholami, S.Gholami, A.Forouzantabar, Sh.Bazyari

Abstract:

A new design approach for three-stage operational amplifiers (op-amps) is proposed. It allows to actually implement a symmetrical push-pull class-AB amplifier output stage for wellestablished three-stage amplifiers using a feedforward transconductance stage. Compared with the conventional design practice, the proposed approach leads to a significant improvement of the symmetry between the positive and the negative op-amp step response, resulting in similar values of the positive/negative settling time. The new approach proves to be very useful in order to fully exploit the potentiality allowed by the op-amp in terms of speed performances. Design examples in a commercial 0.35-μm CMOS prove the effectiveness of theproposed strategy.

Keywords: Low-voltage op amp, design , optimum design

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5966 An Improved Performance of the SRM Drives Using Z-Source Inverter with the Simplified Fuzzy Logic Rule Base

Authors: M. Hari Prabhu

Abstract:

This paper is based on the performance of the Switched Reluctance Motor (SRM) drives using Z-Source Inverter with the simplified rule base of Fuzzy Logic Controller (FLC) with the output scaling factor (SF) self-tuning mechanism are proposed. The aim of this paper is to simplify the program complexity of the controller by reducing the number of fuzzy sets of the membership functions (MFs) without losing the system performance and stability via the adjustable controller gain. ZSI exhibits both voltage-buck and voltage-boost capability. It reduces line harmonics, improves reliability, and extends output voltage range. The output SF of the controller can be tuned continuously by a gain updating factor, whose value is derived from fuzzy logic, with the plant error and error change ratio as input variables. Then the results, carried out on a four-phase 6/8 pole SRM based on the dSPACEDS1104 platform, to show the feasibility and effectiveness of the devised methods and also performance of the proposed controllers will be compared with conventional counterpart.

Keywords: Fuzzy logic controller, scaling factor (SF), switched reluctance motor (SRM), variable-speed drives.

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5965 Modification of Electrical and Switching Characteristics of a Non Punch-Through Insulated Gate Bipolar Transistor by Gamma Irradiation

Authors: Hani Baek, Gwang Min Sun, Chansun Shin, Sung Ho Ahn

Abstract:

Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO2 interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.

Keywords: NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center.

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5964 Impact of Increasing Distributed Solar PV Systems on Distribution Networks in South Africa

Authors: Aradhna Pandarum

Abstract:

South Africa is experiencing an exponential growth of distributed solar PV installations. This is due to various factors with the predominant one being increasing electricity tariffs along with decreasing installation costs, resulting in attractive business cases to some end-users. Despite there being a variety of economic and environmental advantages associated with the installation of PV, their potential impact on distribution grids has yet to be thoroughly investigated. This is especially true since the locations of these units cannot be controlled by Network Service Providers (NSPs) and their output power is stochastic and non-dispatchable. This report details two case studies that were completed to determine the possible voltage and technical losses impact of increasing PV penetration in the Northern Cape of South Africa. Some major impacts considered for the simulations were ramping of PV generation due to intermittency caused by moving clouds, the size and overall hosting capacity and the location of the systems. The main finding is that the technical impact is different on a constrained feeder vs a non-constrained feeder. The acceptable PV penetration level is much lower for a constrained feeder than a non-constrained feeder, depending on where the systems are located.

Keywords: Medium voltage networks, power system losses, power system voltage, solar photovoltaic, PV.

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5963 Study on the Addition of Solar Generating and Energy Storage Units to a Power Distribution System

Authors: T. Costa, D. Narvaez, K. Melo, M. Villalva

Abstract:

Installation of micro-generators based on renewable energy in power distribution system has increased in recent years, with the main renewable sources being solar and wind. Due to the intermittent nature of renewable energy sources, such micro-generators produce time-varying energy which does not correspond at certain times of the day to the peak energy consumption of end users. For this reason, the use of energy storage units next to the grid contributes to the proper leveling of the buses’ voltage level according to Brazilian energy quality standards. In this work, the effect of the addition of a photovoltaic solar generator and a store of energy in the busbar voltages of an electric system is analyzed. The consumption profile is defined as the average hourly use of appliances in a common residence, and the generation profile is defined as a function of the solar irradiation available in a locality. The power summation method is validated with analytical calculation and is used to calculate the modules and angles of the voltages in the buses of an electrical system based on the IEEE standard, at each hour of the day and with defined load and generation profiles. The results show that bus 5 presents the worst voltage level at the power consumption peaks and stabilizes at the appropriate range with the inclusion of the energy storage during the night time period. Solar generator maintains improvement of the voltage level during the period when it receives solar irradiation, having peaks of production during the 12 pm (without exceeding the appropriate maximum levels of tension).

Keywords: Energy storage, power distribution system, solar generator, voltage level.

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5962 Thermo-Mechanical Approach to Evaluate Softening Behavior of Polystyrene: Validation and Modeling

Authors: Salah Al-Enezi, Rashed Al-Zufairi, Naseer Ahmad

Abstract:

A Thermo-mechanical technique was developed to determine softening point temperature/glass transition temperature (Tg) of polystyrene exposed to high pressures. The design utilizes the ability of carbon dioxide to lower the glass transition temperature of polymers and acts as plasticizer. In this apparatus, the sorption of carbon dioxide to induce softening of polymers as a function of temperature/pressure is performed and the extent of softening is measured in three-point-flexural-bending mode. The polymer strip was placed in the cell in contact with the linear variable differential transformer (LVDT). CO2 was pumped into the cell from a supply cylinder to reach high pressure. The results clearly showed that full softening point of the samples, accompanied by a large deformation on the polymer strip. The deflection curves are initially relatively flat and then undergo a dramatic increase as the temperature is elevated. It was found that increasing the pressure of CO2 causes the temperature curves to shift from higher to lower by increment of about 45 K, over the pressure range of 0-120 bars. The obtained experimental Tg values were validated with the values reported in the literature. Finally, it is concluded that the defection model fits consistently to the generated experimental results, which attempts to describe in more detail how the central deflection of a thin polymer strip affected by the CO2 diffusions in the polymeric samples.

Keywords: Softening, high-pressure, polystyrene, CO2 diffusions.

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5961 Degradation in Organic Light Emitting Diodes

Authors: Saba Zare Zardareh, Farhad Akbari Boroumand

Abstract:

The objective is to fabricate organic light emitting diode and to study its degradation process in atmosphere condition in which PFO as an emitting material and PEDOT:PSS as a hole injecting material were used on ITO substrate. Thus degradation process of the OLED was studied upon its current-voltage characteristic. By fabricating this OLED and obtaining blue light and analysis of current-voltage characteristic during the time after fabrication, it was observed that the current of the OLED was exponentially decreased. Current reduction during the initial hours of fabrication was outstanding and after few days its reduction rate was dropped significantly, while the diode was dying.

Keywords: OLED, Degradation, Dark spot.

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5960 Landfill Leachate: A Promising Substrate for Microbial Fuel Cells

Authors: Jayesh M. Sonawane, Prakash C. Ghosh

Abstract:

Landfill leachate emerges as a promising feedstock for microbial fuel cells (MFCs). In the present investigation, direct air-breathing cathode-based MFCs are fabricated to investigate the potential of landfill leachate. Three MFCs that have different cathode areas are fabricated and investigated for 17 days under open circuit conditions. The maximum open circuit voltage (OCV) is observed to be as high as 1.29 V. The maximum cathode area specific power density achieved in the reactor is 1513 mW m-2. Further studies are under progress to understand the origin of high OCV obtained from landfill leachate-based MFCs.

Keywords: Microbial fuel cells, landfill leachate, air-breathing cathode, performance study.

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5959 A High Level Implementation of a High Performance Data Transfer Interface for NoC

Authors: Mansi Jhamb, R. K. Sharma, A. K. Gupta

Abstract:

The distribution of a single global clock across a chip has become the major design bottleneck for high performance VLSI systems owing to the power dissipation, process variability and multicycle cross-chip signaling. A Network-on-Chip (NoC) architecture partitioned into several synchronous blocks has become a promising approach for attaining fine-grain power management at the system level. In a NoC architecture the communication between the blocks is handled asynchronously. To interface these blocks on a chip operating at different frequencies, an asynchronous FIFO interface is inevitable. However, these asynchronous FIFOs are not required if adjacent blocks belong to the same clock domain. In this paper, we have designed and analyzed a 16-bit asynchronous micropipelined FIFO of depth four, with the awareness of place and route on an FPGA device. We have used a commercially available Spartan 3 device and designed a high speed implementation of the asynchronous 4-phase micropipeline. The asynchronous FIFO implemented on the FPGA device shows 76 Mb/s throughput and a handshake cycle of 109 ns for write and 101.3 ns for read at the simulation under the worst case operating conditions (voltage = 0.95V) on a working chip at the room temperature.

Keywords: Asynchronous, FIFO, FPGA, GALS, Network-on- Chip (NoC), VHDL.

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5958 Trap Assisted Tunneling Model for Gate Current in Nano Scale MOSFET with High-K Gate Dielectrics

Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

This paper presents a new compact analytical model of the gate leakage current in high-k based nano scale MOSFET by assuming a two-step inelastic trap-assisted tunneling (ITAT) process as the conduction mechanism. This model is based on an inelastic trap-assisted tunneling (ITAT) mechanism combined with a semiempirical gate leakage current formulation in the BSIM 4 model. The gate tunneling currents have been calculated as a function of gate voltage for different gate dielectrics structures such as HfO2, Al2O3 and Si3N4 with EOT (equivalent oxide thickness) of 1.0 nm. The proposed model is compared and contrasted with santaurus simulation results to verify the accuracy of the model and excellent agreement is found between the analytical and simulated data. It is observed that proposed analytical model is suitable for different highk gate dielectrics simply by adjusting two fitting parameters. It was also shown that gate leakages reduced with the introduction of high-k gate dielectric in place of SiO2.

Keywords: Analytical model, High-k gate dielectrics, inelastic trap assisted tunneling, metal–oxide–semiconductor (MOS) devices.

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5957 Vertical Silicon Nanowire MOSFET With A Fully-Silicided (FUSI) NiSi2 Gate

Authors: Z. X. Chen, N. Singh, D.-L. Kwong

Abstract:

This paper presents a vertical silicon nanowire n- MOSFET integrated with a CMOS-compatible fully-silicided (FUSI) NiSi2 gate. Devices with nanowire diameter of 50nm show good electrical performance (SS < 70mV/dec, DIBL < 30mV/V, Ion/Ioff > 107). Most significantly, threshold voltage tunability of about 0.2V is shown. Although threshold voltage remains low for the 50nm diameter device, it is expected to become more positive as nanowire diameter reduces.

Keywords: NiSi , fully-silicided (FUSI) gate, vertical siliconnanowire (SiNW), CMOS compatible.

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5956 Parameter Estimation of Diode Circuit Using Extended Kalman Filter

Authors: Amit Kumar Gautam, Sudipta Majumdar

Abstract:

This paper presents parameter estimation of a single-phase rectifier using extended Kalman filter (EKF). The state space model has been obtained using Kirchhoff’s current law (KCL) and Kirchhoff’s voltage law (KVL). The capacitor voltage and diode current of the circuit have been estimated using EKF. Simulation results validate the better accuracy of the proposed method as compared to the least mean square method (LMS). Further, EKF has the advantage that it can be used for nonlinear systems.

Keywords: Extended Kalman filter, parameter estimation, single phase rectifier, state space modelling.

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5955 Modeling Studies for Electrocoagulation

Authors: A. Genç, R. Hacıoğlu, B. Bakırcı

Abstract:

Synthetic oily wastewaters were prepared from metal working fluids (MWF). Electrocoagulation experiments were performed under constant voltage application. The current, conductivity, pH, dissolved oxygen concentration and temperature were recorded on line at every 5 seconds during the experiments. Effects of applied voltage differences, electrode materials and distance between electrodes on removal efficiency have been investigated. According to the experimental results, the treatment of MWF wastewaters by iron electrodes rather than aluminum and stainless steel was much quicker; and the distance between electrodes should be less than 1cm. The electrocoagulation process was modeled by using block oriented approach and found out that it can be modeled as a single input and multiple output system. Modeling studies indicates that the electrocoagulation process has a nonlinear model structure.

Keywords: Electrocoagulation, oily wastewater, SIMO systems.

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5954 Using Neural Network for Execution of Programmed Pulse Width Modulation (PPWM) Method

Authors: M. Tarafdar Haque, A. Taheri

Abstract:

Application of neural networks in execution of programmed pulse width modulation (PPWM) of a voltage source inverter (VSI) is studied in this paper. Using the proposed method it is possible to cancel out the desired harmonics in output of VSI in addition to control the magnitude of fundamental harmonic, contineously. By checking the non-trained values and a performance index, the most appropriate neural network is proposed. It is shown that neural networks may solve the custom difficulties of practical utilization of PPWM such as large size of memory, complex digital circuits and controlling the magnitude of output voltage in a discrete manner.

Keywords: Neural Network, Inverter, PPWM.

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5953 A Damage Level Assessment Model for Extra High Voltage Transmission Towers

Authors: Huan-Chieh Chiu, Hung-Shuo Wu, Chien-Hao Wang, Yu-Cheng Yang, Ching-Ya Tseng, Joe-Air Jiang

Abstract:

Power failure resulting from tower collapse due to violent seismic events might bring enormous and inestimable losses. The Chi-Chi earthquake, for example, strongly struck Taiwan and caused huge damage to the power system on September 21, 1999. Nearly 10% of extra high voltage (EHV) transmission towers were damaged in the earthquake. Therefore, seismic hazards of EHV transmission towers should be monitored and evaluated. The ultimate goal of this study is to establish a damage level assessment model for EHV transmission towers. The data of earthquakes provided by Taiwan Central Weather Bureau serve as a reference and then lay the foundation for earthquake simulations and analyses afterward. Some parameters related to the damage level of each point of an EHV tower are simulated and analyzed by the data from monitoring stations once an earthquake occurs. Through the Fourier transform, the seismic wave is then analyzed and transformed into different wave frequencies, and the data would be shown through a response spectrum. With this method, the seismic frequency which damages EHV towers the most is clearly identified. An estimation model is built to determine the damage level caused by a future seismic event. Finally, instead of relying on visual observation done by inspectors, the proposed model can provide a power company with the damage information of a transmission tower. Using the model, manpower required by visual observation can be reduced, and the accuracy of the damage level estimation can be substantially improved. Such a model is greatly useful for health and construction monitoring because of the advantages of long-term evaluation of structural characteristics and long-term damage detection.

Keywords: Smart grid, EHV transmission tower, response spectrum, damage level monitoring.

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5952 Low Jitter ADPLL based Clock Generator for High Speed SoC Applications

Authors: Moorthi S., Meganathan D., Janarthanan D., Praveen Kumar P., J. Raja paul perinbam

Abstract:

An efficient architecture for low jitter All Digital Phase Locked Loop (ADPLL) suitable for high speed SoC applications is presented in this paper. The ADPLL is designed using standard cells and described by Hardware Description Language (HDL). The ADPLL implemented in a 90 nm CMOS process can operate from 10 to 200 MHz and achieve worst case frequency acquisition in 14 reference clock cycles. The simulation result shows that PLL has cycle to cycle jitter of 164 ps and period jitter of 100 ps at 100MHz. Since the digitally controlled oscillator (DCO) can achieve both high resolution and wide frequency range, it can meet the demands of system-level integration. The proposed ADPLL can easily be ported to different processes in a short time. Thus, it can reduce the design time and design complexity of the ADPLL, making it very suitable for System-on-Chip (SoC) applications.

Keywords: All Digital Phase Locked Loop (ADPLL), Systemon-Chip (SoC), Phase Locked Loop (PLL), Very High speedIntegrated Circuit (VHSIC) Hardware Description Language(VHDL), Digitally Controlled Oscillator (DCO), Phase frequencydetector (PFD) and Voltage Controlled Oscillator (VCO).

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5951 Synchronization Technique for Random Switching Frequency Pulse-Width Modulation

Authors: Apinan Aurasopon, Worawat Sa-ngiavibool

Abstract:

This paper proposes a synchronized random switching frequency pulse width modulation (SRSFPWM). In this technique, the clock signal is used to control the random noise frequency which is produced by the feedback voltage of a hysteresis circuit. These make the triangular carrier frequency equaling to the random noise frequency in each switching period with the symmetrical positive and negative slopes of triangular carrier. Therefore, there is no error voltage in PWM signal. The PSpice simulated results shown the proposed technique improved the performance in case of low frequency harmonics of PWM signal comparing with conventional random switching frequency PWM.

Keywords: Random switching frequency pulse - width modulation.

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5950 Model Predictive Control of Three Phase Inverter for PV Systems

Authors: Irtaza M. Syed, Kaamran Raahemifar

Abstract:

This paper presents a model predictive control (MPC) of a utility interactive three phase inverter (TPI) for a photovoltaic (PV) system at commercial level. The proposed model uses phase locked loop (PLL) to synchronize the TPI with the power electric grid (PEG) and performs MPC control in a dq reference frame. TPI model consists of a boost converter (BC), maximum power point tracking (MPPT) control, and a three-leg voltage source inverter (VSI). The operational model of VSI is used to synthesize the sinusoidal current and track the reference. The model is validated using a 35.7 kW PV system in Matlab/Simulink. Implementation results show simplicity and accuracy, as well as reliability of the model.

Keywords: Model predictive control, three phase voltage source inverter, PV system, Matlab/Simulink.

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5949 Channel Length Modulation Effect on Monolayer Graphene Nanoribbon Field Effect Transistor

Authors: Mehdi Saeidmanesh, Razali Ismail

Abstract:

Recently, Graphene Nanoribbon Field Effect Transistors (GNR FETs) attract a great deal of attention due to their better performance in comparison with conventional devices. In this paper, channel length Modulation (CLM) effect on the electrical characteristics of GNR FETs is analytically studied and modeled. To this end, the special distribution of the electric potential along the channel and current-voltage characteristic of the device is modeled. The obtained results of analytical model are compared to the experimental data of published works. As a result, it is observable that considering the effect of CLM, the current-voltage response of GNR FET is more realistic.

Keywords: Graphene nanoribbon, field effect transistors, short channel effects, channel length modulation.

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5948 Electromagnetic Flow Meter Efficiency

Authors: Andrey D. Andreev, Ilona I. Iatcheva, Dimitar N. Karastoyanov, Rumena D. Stancheva

Abstract:

A study of electromagnetic flow meter is presented in the paper. Comparison has been made between the analytical and the numerical results by the use of FEM numerical analysis (Quick Field 5.6) for determining polarization voltage through the circle cross section of the polarization transducer. Exciting and geometrical parameters increasing its effectiveness has been examined. The aim is to obtain maximal output signal. The investigations include different variants of the magnetic flux density distribution around the tube: homogeneous field of magnitude Bm, linear distribution with maximal value Bm and trapezium distribution conserving the same exciting magnetic energy as the homogeneous field.

Keywords: Effectiveness, electromagnetic flow meter, finite element method, polarization voltage.

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5947 Comparison of S-transform and Wavelet Transform in Power Quality Analysis

Authors: Mohammad Javad Dehghani

Abstract:

In the power quality analysis non-stationary nature of voltage distortions require some precise and powerful analytical techniques. The time-frequency representation (TFR) provides a powerful method for identification of the non-stationary of the signals. This paper investigates a comparative study on two techniques for analysis and visualization of voltage distortions with time-varying amplitudes. The techniques include the Discrete Wavelet Transform (DWT), and the S-Transform. Several power quality problems are analyzed using both the discrete wavelet transform and S–transform, showing clearly the advantage of the S– transform in detecting, localizing, and classifying the power quality problems.

Keywords: Power quality, S-Transform, Short Time FourierTransform , Wavelet Transform, instantaneous sag, swell.

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5946 A Design of Electronically Tunable Voltagemode Universal Filter with High Input Impedance

Authors: Surapong Siripongdee, Witthaya Mekhum

Abstract:

This article presents a voltage-mode universal biquadratic filter performing simultaneous 3 standard functions: lowpass, high-pass and band-pass functions, employing differential different current conveyor (DDCC) and current controlled current conveyor (CCCII) as active element. The features of the circuit are that: the quality factor and pole frequency can be tuned independently via the input bias currents: the circuit description is very simple, consisting of 1 DDCC, 2 CCCIIs, 2 electronic resistors and 2 grounded capacitors. Without requiring component matching conditions, the proposed circuit is very appropriate to further develop into an integrated circuit. The PSPICE simulation results are depicted. The given results agree well with the theoretical anticipation.

Keywords: Filter, DDCC, CCCII, Analog circuit, Voltagemode, PSPICE

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