Search results for: voltage profile improvement index.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 3610

Search results for: voltage profile improvement index.

3340 Integration of Unified Power Flow Controller with Backup Energy Supply System for Enhancing Power System Stability

Authors: K. Saravanan

Abstract:

An electrical power system has some negative aspects such as flickering and deviations of voltage/power. This can be eliminated using energy storage devices that will provide a backup energy at the time of voltage/power deviations. Energy-storage devices get charging when system voltage/power is higher than reference value and discharging when system voltage/power is lower than reference value, it is acting as catalysts to provide energy boost. In this paper, a dynamic control of Unified Power Flow Controller (UPFC) integrated with superconducting magnetic energy storage (SMES) is developed to improve the power quality, power oscillation damping, and dynamic voltage stability through the transmission line. UPFC inter-connected to SMES through an interface with DC-DC chopper. This inter-connected system is capable of injecting (absorbing) the real and reactive power into (from) the system at the beginning of stability problems. In this paper, the simulation results of UPFC integrated with SMES and UPFC integrated with fuel cells (FCs) are compared using MATLAB/Simulink software package.

Keywords: UPFC, SMES, power system stability, flexible ac transmission systems, fuel cells, chopper.

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3339 Low Power Capacitance-to-Voltage Converter for Magnetometer Interface IC

Authors: Dipankar Nag, Choe Andrew Kunil, Kevin Chai Tshun Chuan, Minkyu Je

Abstract:

This paper presents the design and implementation of a fully integrated Capacitance-to-Voltage Converter (CVC) as the analog front-end for magnetometer interface IC. The application demands very low power solution operating in the frequency of around 20 KHz. The design adapts low power architecture to create low noise electronic interface for Capacitive Micro-machined Lorentz force magnetometer sensor. Using a 0.18-μm CMOS process, simulation results of this interface IC show that the proposed CVC can provide 33 dB closed loop gain, 20 nV/√Hz input referred noise at 20 KHz, while consuming 65 μA current from 1.8-V supply. 

Keywords: Analog front end, Capacitance-to-Voltage Converter, Magnetometer, MEMS, Recycling Folded Cascode.

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3338 Investigation of Water Deficit Stress on Agronomical Traits of Soybean Cultivars in Temperate Climate

Authors: Jahanfar Daneshian, P. Jonoubi, D. Barari Tari

Abstract:

In order to investigate water deficit stress on 24 of soybean (Glycine Max. L) cultivars and lines in temperate climate, an experiment was conducted in Iran Seed and Plant Improvement Institute. Stress levels were irrigation after evaporation of 50, 100, 150 mm water from pan, class A. Randomized Completely Block Design was arranged for each stress levels. Some traits such as, node number, plant height, pod number per area, grain number per pod, grain number per area, 1000 grains weight, grain yield and harvest index were measured. Results showed that water deficit stress had significant effect on node number, plant height, pod number per area, grain number per pod, grain number per area, 1000 grains weight and harvest index. Also all of agronomic traits except harvest index influenced significantly by cultivars and lines. The least and most grain yield was belonged to Ronak X Williams and M41 x Clark respectively.

Keywords: Soybean, water deficit stress, Agronomic traits, Yield

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3337 A Floating Gate MOSFET Based Novel Programmable Current Reference

Authors: V. Suresh Babu, Haseena P. S., Varun P. Gopi, M. R. Baiju

Abstract:

In this paper a scheme is proposed for generating a programmable current reference which can be implemented in the CMOS technology. The current can be varied over a wide range by changing an external voltage applied to one of the control gates of FGMOS (Floating Gate MOSFET). For a range of supply voltages and temperature, CMOS current reference is found to be dependent, this dependence is compensated by subtracting two current outputs with the same dependencies on the supply voltage and temperature. The system performance is found to improve with the use of FGMOS. Mathematical analysis of the proposed circuit is done to establish supply voltage and temperature independence. Simulation and performance evaluation of the proposed current reference circuit is done using TANNER EDA Tools. The current reference shows the supply and temperature dependencies of 520 ppm/V and 312 ppm/oC, respectively. The proposed current reference can operate down to 0.9 V supply.

Keywords: Floating Gate MOSFET, current reference, self bias scheme, temperature independency, supply voltage independency.

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3336 Enhancement of the Performance of Al-Qatraneh 33-kV Transmission Line Using STATCOM: A Case Study

Authors: Ali Hamad, Ibrahim Al-Drous, Saleh Al-Jufout

Abstract:

This paper presents a case study of using STATCOM to enhance the performance of Al-Qatraneh 33-kV transmission line. The location of the STATCOM was identified by maintaining minimum voltage drops at the 110 load nodes. The transmission line and the 110 load nodes have been modeled by MATLAB/Simulink. The suggested STATCOM and its location will increase the transmission capability of this transmission line and overcome the overload expected in the year 2020. The annual percentage loading rise has been considered as 14.35%. A graphical representation of the line-to-line voltages and the voltage drops at different load nodes is illustrated.

Keywords: FACTS, MATLAB, STATCOM, transmission line, voltage drop.

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3335 An Evaluation of Sag Detection Techniques for Fast Solid-State Electronic Transferring to Alternate Electrical Energy Sources

Authors: M. N. Moschakis, I. G. Andritsos, V. V. Dafopoulos, J. M. Prousalidis, E. S. Karapidakis

Abstract:

This paper deals with the evaluation of different detection strategies used in power electronic devices as a critical element for an effective mitigation of voltage disturbances. The effectiveness of those detection schemes in the mitigation of disturbances such as voltage sags by a Solid-State Transfer Switch is evaluated through simulations. All critical parameters affecting their performance is analytically described and presented. Moreover, the effect of fast detection of sags on the overall performance of STS is analyzed and investigated.

Keywords: Faults (short-circuits), industrial engineering, power electronics, power quality, static transfer switch, voltage sags (or dips).

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3334 Power Quality Improvement Using PI and Fuzzy Logic Controllers Based Shunt Active Filter

Authors: Dipen A. Mistry, Bhupelly Dheeraj, Ravit Gautam, Manmohan Singh Meena, Suresh Mikkili

Abstract:

In recent years the large scale use of the power electronic equipment has led to an increase of harmonics in the power system. The harmonics results into a poor power quality and have great adverse economical impact on the utilities and customers. Current harmonics are one of the most common power quality problems and are usually resolved by using shunt active filter (SHAF). The main objective of this work is to develop PI and Fuzzy logic controllers (FLC) to analyze the performance of Shunt Active Filter for mitigating current harmonics under balanced and unbalanced sinusoidal source voltage conditions for normal load and increased load. When the supply voltages are ideal (balanced), both PI and FLC are converging to the same compensation characteristics. However, the supply voltages are non-ideal (unbalanced), FLC offers outstanding results. Simulation results validate the superiority of FLC with triangular membership function over the PI controller.

Keywords: DC link voltage, Fuzzy logic controller, Harmonics, PI controller, Shunt Active Filter.

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3333 Curing Methods Yield Multiple Refractive Index of Benzocyclobutene Polymer Film

Authors: N.A.M. Yahya, W.H. Lim, S.W. Phang, H. Ahmad, R. Zakaria, F.R. Mahamd Adikan

Abstract:

Refractive index control of benzocyclobutene (BCB 4024-40) is achieved by facilitating different conditions during the thermal curing of BCB film. Refractive index (RI) change of 1.49% is obtained with curing of BCB film using an oven, while the RI change is 0.1% when the BCB is cured using a hotplate. The two different curing methods exhibit a temperature dependent refractive index change of the BCB photosensitive polymer. By carefully controlling the curing conditions, multiple layers of BCB with different RI can be fabricated, which can then be applied in the fabrication of optical waveguides.

Keywords: BCB 4024-40, curing method, multiple refractiveindex, polymers.

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3332 Comparison Mechanical and Chemical Treatments on Properties of Low Yield Bagasse Pulp During Recycling

Authors: Parizad Sheikhi, Mohammad Talaeipour

Abstract:

the effects of refining and alkaline chemicals on potential of recycling bleached chemical pulp of bagasse were investigated in this study. Recycling was done until three times. Handsheet properties such as, apparent density, light scattering coefficient, tear index, burst index, breaking length, and fold number according to TAPPI standard were measured. Water retention value also was used to considering the treatments during recycling. Refining enhanced the strength of recycled pulp by increasing fiber flexibility and swelling ability, whereas by applying chemical treatment didn't observe any improvement. The morphology of recycled fiber was considered with scanning electron microscopy (SEM).

Keywords: Bagasse pulp, chemical treatment, recycling, refining, scanning electron microscopy, water retention value.

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3331 Measurement of Small PD-S in Compressed SF6(10%) - N2(90%) Gas Mixture

Authors: B. Rajesh Kamath, J. Sundara Rajan

Abstract:

Partial Discharge measurement is a very important means of assessing the integrity of insulation systems in a High Voltage apparatus. In compressed gas insulation systems, floating particles can initiate partial discharge activities which adversely affect the working of insulation. Partial Discharges below the inception voltage also plays a crucial in damaging the integrity of insulation over a period of time. This paper discusses the effect of loose and fixed Copper and Nichrome wire particles on the PD characteristics in SF6-N2 (10:90) gas mixtures at a pressure of 0.4MPa. The Partial Discharge statistical parameters and their correlation to the observed results are discussed.

Keywords: Gas Insulated transmission Line, Sulphur HexaFlouride, metallic Particles, Partial Discharge (PD), InceptionVoltage (Vi), Extinction Voltage (Ve), PD Statistical parameters.

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3330 Characterization of the Energy Band Diagram of Fabricated SnO2/CdS/CdTe Thin Film Solar Cells

Authors: Rasha A. Abdullah, Mohammed. A. Razooqi, Adwan N. H. Al-Ajili

Abstract:

A SnO2/CdS/CdTe heterojunction was fabricated by thermal evaporation technique. The fabricated cells were annealed at 573K for periods of 60, 120 and 180 minutes. The structural properties of the solar cells have been studied by using X-ray diffraction. Capacitance- voltage measurements were studied for the as-prepared and annealed cells at a frequency of 102 Hz. The capacitance- voltage measurements indicated that these cells are abrupt. The capacitance decreases with increasing annealing time. The zero bias depletion region width and the carrier concentration increased with increasing annealing time. The carrier transport mechanism for the CdS/CdTe heterojunction in dark is tunneling recombination. The ideality factor is 1.56 and the reverse bias saturation current is 9.6×10-10A. The energy band lineup for the n- CdS/p-CdTe heterojunction was investigated using current - voltage and capacitance - voltage characteristics.

Keywords: SnO2/CdS/CdTe heterojunction, XRD, C-V measurement, I-V measurement, energy band diagram.

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3329 A Case Study of Limited Dynamic Voltage Frequency Scaling in Low-Power Processors

Authors: Hwan Su Jung, Ahn Jun Gil, Jong Tae Kim

Abstract:

Power management techniques are necessary to save power in the microprocessor. By changing the frequency and/or operating voltage of processor, DVFS can control power consumption. In this paper, we perform a case study to find optimal power state transition for DVFS. We propose the equation to find the optimal ratio between executions of states while taking into account the deadline of processing time and the power state transition delay overhead. The experiment is performed on the Cortex-M4 processor, and average 6.5% power saving is observed when DVFS is applied under the deadline condition.

Keywords: Deadline, Dynamic Voltage Frequency Scaling, Power State Transition.

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3328 Evaluating Refactoring with a Quality Index

Authors: Crt Gerlec, Marjan Hericko

Abstract:

The aim of every software product is to achieve an appropriate level of software quality. Developers and designers are trying to produce readable, reliable, maintainable, reusable and testable code. To help achieve these goals, several approaches have been utilized. In this paper, refactoring technique was used to evaluate software quality with a quality index. It is composed of different metric sets which describes various quality aspects.

Keywords: Refactoring, Software Metrics, Software Quality, Quality Index, Agile methodologies

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3327 Depletion Layer Parameters of Al-MoO3-P-CdTe-Al MOS Structures

Authors: A. C. Sarmah

Abstract:

The Al-MoO3-P-CdTe-Al MOS sandwich structures were fabricated by vacuum deposition method on cleaned glass substrates. Capacitance versus voltage measurements were performed at different frequencies and sweep rates of applied voltages for oxide and semiconductor films of different thicknesses. In the negative voltage region of the C-V curve a high differential capacitance of the semiconductor was observed and at high frequencies (<10 kHz) the transition from accumulation to depletion and further to deep depletion was observed as the voltage was swept from negative to positive. A study have been undertaken to determine the value of acceptor density and some depletion layer parameters such as depletion layer capacitance, depletion width, impurity concentration, flat band voltage, Debye length, flat band capacitance, diffusion or built-in-potential, space charge per unit area etc. These were determined from C-V measurements for different oxide and semiconductor thicknesses.

Keywords: Debye length, Depletion width, flat band capacitance, impurity concentration.

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3326 Bias Optimization of Mach-Zehnder Modulator Considering RF Gain on OFDM Radio-Over-Fiber System

Authors: Ghazi Al Sukkar, Yazid Khattabi, Shifen Zhong

Abstract:

Most of the recent wireless LANs, broadband access networks, and digital broadcasting use Orthogonal Frequency Division Multiplexing techniques. In addition, the increasing demand of Data and Internet makes fiber optics an important technology, as fiber optics has many characteristics that make it the best solution for transferring huge frames of Data from a point to another. Radio over fiber is the place where high quality RF is converted to optical signals over single mode fiber. Optimum values for the bias level and the switching voltage for Mach-Zehnder modulator are important for the performance of radio over fiber links. In this paper, we propose a method to optimize the two parameters simultaneously; the bias and the switching voltage point of the external modulator of a radio over fiber system considering RF gain. Simulation results show the optimum gain value under these two parameters.

Keywords: OFDM, Mach Zehnder Bias Voltage, switching voltage, radio-over-fiber, RF gain.

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3325 Influence of Axial Magnetic Field on the Electrical Breakdown and Secondary Electron Emission in Plane-Parallel Plasma Discharge

Authors: Sabah I. Wais, Raghad Y. Mohammed, Sedki O. Yousif

Abstract:

The influence of axial magnetic field (B=0.48 T) on the variation of ionization efficiency coefficient h and secondary electron emission coefficient g with respect to reduced electric field E/P is studied at a new range of plane-parallel electrode spacing (0< d< 20 cm) and different nitrogen working pressure between 0.5-20 Pa. The axial magnetic field is produced from an inductive copper coil of radius 5.6 cm. The experimental data of breakdown voltage is adopted to estimate the mean Paschen curves at different working features. The secondary electron emission coefficient is calculated from the mean Paschen curve and used to determine the minimum breakdown voltage. A reduction of discharge voltage of about 25% is investigated by the applied of axial magnetic field. At high interelectrode spacing, the effect of axial magnetic field becomes more significant for the obtained values of h but it was less for the values of g.

Keywords: Paschen curve, Townsend coefficient, Secondaryelectron emission, Magnetic field, Minimum breakdown voltage.

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3324 An Analysis of the Optimization Condition of Plasma Generator for Air Conditioner System

Authors: Arunrungrusmi S, Chaokamnerd W , Tanitteerapan T , Mungkung N., Yuji T.

Abstract:

This research aimed to develop plasma system used in air conditioners. This developed plasma system could be installed in the air conditioners - all split type. The quality of air could be improved to be equal to present plasma system. Development processes were as follows: 1) to study the plasma system used in the air conditioners, 2) to design a plasma generator, 3) to develop the plasma generator, and 4) to test its performance in many types of the air conditioners. This plasma system was developed by AC high voltage – 14 kv with a frequency of 50 kHz. Carbon was a conductor to generate arc in air purifier system. The research was tested by installing the plasma generator in the air conditioners - wall type. Whereas, there were 3 types of installations: air flow out, air flow in, and room center. The result of the plasma generator installed in the air conditioners, split type, revealed that the air flow out installation provided the highest average of o-zone at 223 mg/h. This type of installation provided the highest efficiency of air quality improvement. Moreover, the air flow in installation and the room center installation provided the average of the o-zone at 163 mg/h and 64 mg/h, respectively.

Keywords: Air Conditioner, Plasma generator, High voltage, Optimization, Installation position.

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3323 A Soft Switching PWM DC-DC Boost Converter with Increased Efficiency by Using ZVT-ZCT Techniques

Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy

Abstract:

In this paper, an improved active snubber cell is proposed on account of soft switching (SS) family of pulse width modulation (PWM) DC-DC converters. The improved snubber cell provides zero-voltage transition (ZVT) turn on and zero-current transition (ZCT) turn off for main switch. The snubber cell decreases EMI noise and operates with SS in a wide range of line and load voltages. Besides, all of the semiconductor devices in the converter operate with SS. There is no additional voltage and current stress on the main devices. Additionally, extra voltage stress does not occur on the auxiliary switch and its current stress is acceptable value. The improved converter has a low cost and simple structure. The theoretical analysis of converter is clarified and the operating states are given in detail. The experimental results of converter are obtained by prototype of 500 W and 100 kHz. It is observed that the experimental results and theoretical analysis of converter are suitable with each other perfectly.

Keywords: Active snubber cells, DC-DC converters, zero-voltage transition, zero-current transition.

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3322 Hardware-in-the-Loop Test for Automatic Voltage Regulator of Synchronous Condenser

Authors: Ha Thi Nguyen, Guangya Yang, Arne Hejde Nielsen, Peter Højgaard Jensen

Abstract:

Automatic voltage regulator (AVR) plays an important role in volt/var control of synchronous condenser (SC) in power systems. Test AVR performance in steady-state and dynamic conditions in real grid is expensive, low efficiency, and hard to achieve. To address this issue, we implement hardware-in-the-loop (HiL) test for the AVR of SC to test the steady-state and dynamic performances of AVR in different operating conditions. Startup procedure of the system and voltage set point changes are studied to evaluate the AVR hardware response. Overexcitation, underexcitation, and AVR set point loss are tested to compare the performance of SC with the AVR hardware and that of simulation. The comparative results demonstrate how AVR will work in a real system. The results show HiL test is an effective approach for testing devices before deployment and is able to parameterize the controller with lower cost, higher efficiency, and more flexibility.

Keywords: Automatic voltage regulator, hardware-in-the-loop, synchronous condenser, real time digital simulator.

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3321 Transient Voltage Distribution on the Single Phase Transmission Line under Short Circuit Fault Effect

Authors: A. Kojah, A. Nacaroğlu

Abstract:

Single phase transmission lines are used to transfer data or energy between two users. Transient conditions such as switching operations and short circuit faults cause the generation of the fluctuation on the waveform to be transmitted. Spatial voltage distribution on the single phase transmission line may change owing to the position and duration of the short circuit fault in the system. In this paper, the state space representation of the single phase transmission line for short circuit fault and for various types of terminations is given. Since the transmission line is modeled in time domain using distributed parametric elements, the mathematical representation of the event is given in state space (time domain) differential equation form. It also makes easy to solve the problem because of the time and space dependent characteristics of the voltage variations on the distributed parametrically modeled transmission line.

Keywords: Energy transmission, transient effects, transmission line, transient voltage, RLC short circuit, single phase.

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3320 Low Voltage Squarer Using Floating Gate MOSFETs

Authors: Rishikesh Pandey, Maneesha Gupta

Abstract:

A new low-voltage floating gate MOSFET (FGMOS) based squarer using square law characteristic of the FGMOS is proposed in this paper. The major advantages of the squarer are simplicity, rail-to-rail input dynamic range, low total harmonic distortion, and low power consumption. The proposed circuit is biased without body effect. The circuit is designed and simulated using SPICE in 0.25μm CMOS technology. The squarer is operated at the supply voltages of ±0.75V . The total harmonic distortion (THD) for the input signal 0.75Vpp at 25 KHz, and maximum power consumption were found to be less than 1% and 319μW respectively.

Keywords: Analog signal processing, floating gate MOSFETs, low-voltage, Spice, squarer.

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3319 Cascaded ANN for Evaluation of Frequency and Air-gap Voltage of Self-Excited Induction Generator

Authors: Raja Singh Khela, R. K. Bansal, K. S. Sandhu, A. K. Goel

Abstract:

Self-Excited Induction Generator (SEIG) builds up voltage while it enters in its magnetic saturation region. Due to non-linear magnetic characteristics, the performance analysis of SEIG involves cumbersome mathematical computations. The dependence of air-gap voltage on saturated magnetizing reactance can only be established at rated frequency by conducting a laboratory test commonly known as synchronous run test. But, there is no laboratory method to determine saturated magnetizing reactance and air-gap voltage of SEIG at varying speed, terminal capacitance and other loading conditions. For overall analysis of SEIG, prior information of magnetizing reactance, generated frequency and air-gap voltage is essentially required. Thus, analytical methods are the only alternative to determine these variables. Non-existence of direct mathematical relationship of these variables for different terminal conditions has forced the researchers to evolve new computational techniques. Artificial Neural Networks (ANNs) are very useful for solution of such complex problems, as they do not require any a priori information about the system. In this paper, an attempt is made to use cascaded neural networks to first determine the generated frequency and magnetizing reactance with varying terminal conditions and then air-gap voltage of SEIG. The results obtained from the ANN model are used to evaluate the overall performance of SEIG and are found to be in good agreement with experimental results. Hence, it is concluded that analysis of SEIG can be carried out effectively using ANNs.

Keywords: Self-Excited Induction Generator, Artificial NeuralNetworks, Exciting Capacitance and Saturated magnetizingreactance.

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3318 Impact of Gate Insulation Material and Thickness on Pocket Implanted MOS Device

Authors: Muhibul Haque Bhuyan

Abstract:

This paper reports on the impact study with the variation of the gate insulation material and thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate materials used here are silicon dioxide (SiO2), aluminum silicate (Al2SiO5), silicon nitride (Si3N4), alumina (Al2O3), hafnium silicate (HfSiO4), tantalum pentoxide (Ta2O5), hafnium dioxide (HfO2), zirconium dioxide (ZrO2), and lanthanum oxide (La2O3) upon a p-type silicon substrate material. The gate insulation thickness was varied from 2.0 nm to 3.5 nm for a 50 nm channel length pocket implanted n-MOSFET. There are several models available for this device. We have studied and simulated threshold voltage model incorporating drain and substrate bias effects, surface potential, inversion layer charge, pinch-off voltage, effective electric field, inversion layer mobility, and subthreshold drain current models based on two linear symmetric pocket doping profiles. We have changed the values of the two parameters, viz. gate insulation material and thickness gradually fixing the other parameter at their typical values. Then we compared and analyzed the simulation results. This study would be helpful for the nano-scaled MOS device designers for various applications to predict the device behavior.

Keywords: Linear symmetric pocket profile, pocket implanted n-MOS Device, model, impact of gate material, insulator thickness.

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3317 Electrical Properties of n-CdO/p-Si Heterojunction Diode Fabricated by Sol Gel

Authors: S.Aksoy, Y.Caglar

Abstract:

n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated. The X-ray diffraction (XRD) spectra indicated that the film was of polycrystalline nature. The scanning electron microscopy (SEM) images indicate that the surface morphology CdO film consists of the clusters formed with the coming together of the nanoparticles. The electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode was investigated by current-voltage. The ideality factor of the diode was found to be 3.02 for room temperature. The reverse current of the diode strongly increased with illumination intensity of 100 mWcm-2 and the diode gave a maximum open circuit voltage Voc of 0.04 V and short-circuits current Isc of 9.92×10-9 A.

Keywords: CdO, heterojunction semiconductor devices, ideality factor, current-voltage characteristics

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3316 Fenestration Effects on Cross Ventilation for a Typical Taiwanese School Building When Applying Wind Profile

Authors: Wei-Hwa Chiang, Hao-Hsiang Hsu, Jian-Sheng Huang

Abstract:

Appropriate ventilation in a classroom is helpful for enhancing air exchange rate and student concentration. This study focuses on the effects of fenestration in a four-story school building by performing numerical simulation of a building when considering indoor and outdoor environments simultaneously. The wind profile function embedded in PHOENICS code was set as the inlet boundary condition in a suburban environment. Sixteen fenestration combinations were compared in a classroom containing thirty seats. This study evaluates mean age of air (AGE) and airflow pattern of a classroom on different floors. Considering both wind profile and fenestration effects, the airflow on higher floors is channeled toward the area near ceiling in a room and causes older mean age of air in the breathing zone. The results in this study serve as a useful guide for enhancing natural ventilation in a typical school building.

Keywords: Cross ventilation, Fenestration effect, Wind profile, Mean age of air, CFD

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3315 A Comparison of Shunt Active Power Filter Control Methods under Non-Sinusoidal and Unbalanced Voltage Conditions

Authors: H. Abaali, M. T. Lamchich, M. Raoufi

Abstract:

There are a variety of reference current identification methods, for the shunt active power filter (SAPF), such as the instantaneous active and reactive power, the instantaneous active and reactive current and the synchronous detection method are evaluated and compared under ideal, non sinusoidal and unbalanced voltage conditions. The SAPF performances, for the investigated identification methods, are tested for a non linear load. The simulation results, using Matlab Power System Blockset Toolbox from a complete structure, are presented and discussed.

Keywords: Shunt active power filter, Current perturbation, Non sinusoidal and unbalanced voltage conditions.

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3314 A Chaotic Study on Tremor Behavior of Parkinsonian Patients under Deep Brain Stimulation

Authors: M. Sadeghi, A.H. Jafari, S.M.P. Firoozabadi

Abstract:

Deep Brain Stimulation or DBS is a surgical treatment for Parkinson-s Disease with three stimulation parameters: frequency, pulse width, and voltage. The parameters should be selected appropriately to achieve effective treatment. This selection now, performs clinically. The aim of this research is to study chaotic behavior of recorded tremor of patients under DBS in order to present a computational method to recognize stimulation optimum voltage. We obtained some chaotic features of tremor signal, and discovered embedding space of it has an attractor, and its largest Lyapunov exponent is positive, which show tremor signal has chaotic behavior, also we found out, in optimal voltage, entropy and embedding space variance of tremor signal have minimum values in comparison with other voltages. These differences can help neurologists recognize optimal voltage numerically, which leads to reduce patients' role and discomfort in optimizing stimulation parameters and to do treatment with high accuracy.

Keywords: Chaos, Deep Brain Stimulation, Parkinson's Disease, Stimulation Parameters, tremor.

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3313 Thrust Enhancement on a Two Dimensional Elliptic Airfoil in a Forward Flight

Authors: S. M. Dash, K. B. Lua, T. T. Lim

Abstract:

This paper presents results of numerical and experimental studies on a two-dimensional (2D) flapping elliptic airfoil in a forward flight condition at Reynolds number of 5000. The study is motivated from an earlier investigation which shows that the deterioration in thrust performance of a sinusoidal heaving and pitching 2D (NACA0012) airfoil at high flapping frequency can be recovered by changing the effective angle of attack profile to square wave, sawtooth, or cosine wave shape. To better understand why such modifications lead to superior thrust performance, we take a closer look at the transient aerodynamic force behavior of an airfoil when the effective angle of attack profile changes gradually from a generic smooth trapezoidal profile to a sinusoid shape by modifying the base length of the trapezoid. The choice of using a smooth trapezoidal profile is to avoid the infinite acceleration condition encountered in the square wave profile. Our results show that the enhancement in the time-averaged thrust performance at high flapping frequency can be attributed to the delay and reduction in the drag producing valley region in the transient thrust force coefficient when the effective angle of attack profile changes from sinusoidal to trapezoidal.  

Keywords: Two-dimensional Flapping Airfoil, Thrust Performance, Effective Angle of Attack, CFD and Experiments.

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3312 Effect of Curing Profile to Eliminate the Voids / Black Dots Formation in Underfill Epoxy for Hi-CTE Flip Chip Packaging

Authors: Zainudin Kornain, Azman Jalar, Rozaidi Rasid, Fong Chee Seng

Abstract:

Void formation in underfill is considered as failure in flip chip manufacturing process. Void formation possibly caused by several factors such as poor soldering and flux residue during die attach process, void entrapment due moisture contamination, dispense pattern process and setting up the curing process. This paper presents the comparison of single step and two steps curing profile towards the void and black dots formation in underfill for Hi-CTE Flip Chip Ceramic Ball Grid Array Package (FC-CBGA). Statistic analysis was conducted to analyze how different factors such as wafer lot, sawing technique, underfill fillet height and curing profile recipe were affected the formation of voids and black dots. A C-Mode Scanning Aqoustic Microscopy (C-SAM) was used to scan the total count of voids and black dots. It was shown that the 2 steps curing profile provided solution for void elimination and black dots in underfill after curing process.

Keywords: black dots formation, curing profile, FC-CBGA, underfill, void formation,

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3311 Design and Analysis of Low-Power, High Speed and Area Efficient 2-Bit Digital Magnitude Comparator in 90nm CMOS Technology Using Gate Diffusion Input

Authors: Fasil Endalamaw

Abstract:

Digital magnitude comparators based on Gate Diffusion Input (GDI) implementation technique are high speed and area-efficient, and they consume less power as compared to other implementation techniques. However, they are less efficient for some logic gates and have no full voltage swing. In this paper, we made a performance comparison between the GDI implementation technique and other implementation methods, such as Static CMOS, Pass Transistor Logic (PTL), and Transmission Gate (TG) in 90 nm, 120 nm, and 180 nm CMOS technologies using BSIM4 MOS model. We proposed a methodology (hybrid implementation) of implementing digital magnitude comparators which significantly improved the power, speed, area, and voltage swing requirements. Simulation results revealed that the hybrid implementation of digital magnitude comparators show a 10.84% (power dissipation), 41.6% (propagation delay), 47.95% (power-delay product (PDP)) improvement compared to the usual GDI implementation method. We used Microwind & Dsch Version 3.5 as well as the Tanner EDA 16.0 tools for simulation purposes.

Keywords: Efficient, gate diffusion input, high speed, low power, CMOS.

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