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Depletion Layer Parameters of Al-MoO3-P-CdTe-Al MOS Structures

Authors: A. C. Sarmah

Abstract:

The Al-MoO3-P-CdTe-Al MOS sandwich structures were fabricated by vacuum deposition method on cleaned glass substrates. Capacitance versus voltage measurements were performed at different frequencies and sweep rates of applied voltages for oxide and semiconductor films of different thicknesses. In the negative voltage region of the C-V curve a high differential capacitance of the semiconductor was observed and at high frequencies (<10 kHz) the transition from accumulation to depletion and further to deep depletion was observed as the voltage was swept from negative to positive. A study have been undertaken to determine the value of acceptor density and some depletion layer parameters such as depletion layer capacitance, depletion width, impurity concentration, flat band voltage, Debye length, flat band capacitance, diffusion or built-in-potential, space charge per unit area etc. These were determined from C-V measurements for different oxide and semiconductor thicknesses.

Keywords: debye length, depletion width, impurity concentration, flat band capacitance

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1100252

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References:


[1] E. H. Poindexter, “MOS interface states: overview and physicochemical perspective,” Semiconductor Science Technology, 1989, Vol. 4, pp. 961-969.
[2] P. K. Dubey, V. A. Filikov and J. G. Simmons, “Capacitance-voltage and current-voltage characteristics of tunnel MOS structures”, Thin Solid Films, 1976, Vol. 33, pp. 49-63.
[3] C. M. Wu, and E. S. Yang, “Investigation of high - temperature annealing and quenching effects on Al-nSi diodes by C-V and I-V measurements”, J. Appl. Phys., 1981, Vol. 52, pp. 4700-4703.
[4] Y. Shen, C. Boragno, R. Rolandi, and U. Valbusa, “Metal - Insulator - Semiconductor structure with a polymerized Langmuir - Blodgett film of a styrene functionalized surfactant”, Thin Solid Films, 1990, Vol. 187, pp. 155-163.
[5] C. Comini, G. Faglia, G. Sberveglieri, C. Cantalini, M. Passacantando, S. Santucci, Y. Li, W. Wlodarski and W. Qu, “Carbon monoxide response of MoO3 thin films deposited by different techniques,” Sensors and Actuators, 2000, Vol. 68, pp. 168 - 174.
[6] F. L. Castillo- Alvarado, J.A. Inoue-Chavez, O. Vigil- Galan, ESanchez- Meza, E. Lopez-Chavez and G. Contreras - Puente, “C-V calculations in CdS/ CdTe thin films solar cells”, Thin Solid Films, 2010, 518, pp. 1796-1798.
[7] S. K. Deb and J. Chopporain, “Theoretical modes of molybdenum trioxide films”, J. Appl Phys, 1966, Vol. 37, pp. 4818-4822.
[8] S. R. Hofstein and G. Warfield, “Physical limitation on the frequency response of a semiconductor surface inversion layer”, Solid State Electron, 1965, Vol. 8, pp. 321-330.
[9] S. M. Sze, Physics of Semiconductor Devices, Wiley Eastern, Second Edition, 1987.
[10] W. C. Johnson and P. T. Panousis, “The Influence of Debye length on the C-V measurement on doping profiles”, IEEE Transaction on Electron Devices, 1971, Ed. 18, pp 965-969.
[11] G.I. Ypifanov and A.Yu. Moma, Introduction to Solid State Electronics, MIR Publications, Moscow, pp. 305, 1984.
[12] BEN G. Streetman and S.K. Banerjee, Solid State Electronic Device, PHI Learning Private Ltd.. Sixth Edition, pp.275, 2013.
[13] D.A. Neamen and D. Biswas, Semiconductor Physics and Devices, McGraw Hill Education (India) Private Ltd., Fourth Edition, pp. 181, 2012.