Search results for: vertical MOSFETs

Authors: Z. X. Chen, T. S. Phua, X. P. Wang, G. -Q. Lo, D. -L. Kwong

Abstract:

This paper presents device simulations on the vertical silicon nanowire tunneling FET (VSiNW TFET). Simulations show that a narrow nanowire and thin gate oxide is required for good performance, which is expected even for conventional MOSFETs. The gate length also needs to be more than the nanowire diameter to prevent short channel effects. An effect more unique to TFET is the need for abrupt source to channel junction, which is shown to improve the performance. The ambipolar effect suppression by reducing drain doping concentration is also explored and shown to have little or no effect on performance.

Keywords: Device simulation, MEDICI, tunneling FET (TFET), vertical silicon nanowire.

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Authors: Xiang Li, Zhixian Chen, Zheng Fang, Aashit Kamath, Xinpeng Wang, Navab Singh, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We integrate TiN/Ni/HfO2/Si RRAM cell with a vertical gate-all-around (GAA) nanowire transistor to achieve compact 4F2 footprint in a 1T1R configuration. The tip of the Si nanowire (source of the transistor) serves as bottom electrode of the memory cell. Fabricated devices with nanowire diameter ~ 50nm demonstrate ultra-low current/power switching; unipolar switching with 10μA/30μW SET and 20μA/30μW RESET and bipolar switching with 20nA/85nW SET and 0.2nA/0.7nW RESET. Further, the switching current is found to scale with nanowire diameter making the architecture promising for future scaling.

Keywords: RRAM, 1T1R, gate-all-around FET, nanowire FET, vertical MOSFETs

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Authors: M. Khaouani, A. Guen-Bouazza, B. Bouazza, Z. Kourdi

Abstract:

The integrity and issues related to electrostatic performance associated with scaling Si MOSFET bulk sub 10nm channel length promotes research in new device architectures such as SOI, double gate and GAA MOSFET. In this paper, we present some novel characteristic of horizontal rectangular gate\gate all around MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some parameters variation on our structure, that having a direct impact on their threshold voltage and drain current. In addition, our TFET showed reasonable I_ON/I_OFF ratio of (10⁴) and low drain induced barrier lowering (DIBL) of 39 mV/V.

Keywords: GAA, SILVACO, QUANTUM, MOSFETs.

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Authors: Paniz Tafakori, Ali A. Orouji

Abstract:

In this paper the features of multiple material gate silicon-on-insulator MOSFETs are presented and compared with single material gate silicon-on-insulator MOSFET structures. The results indicate that the multiple material gate structures reduce short channel effects such as drain induce barrier lowering, hot electron effect and better current characteristics in comparison with single material structures

Keywords: Short-channel effects (SCEs), Dual material gate (DMG), Triple material gate (TMG), Pentamerous material gate (PMG).

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Authors: F. Salehuddin, I. Ahmad, F. A. Hamid, A. Zaharim, H. A. Elgomati, B. Y. Majlis, P. R. Apte

Abstract:

In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/μm.

Keywords: Optimization, p-type MOSFETs device, HALO Structure, Taguchi Method.

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Authors: Rishikesh Pandey, Maneesha Gupta

Abstract:

A new low-voltage floating gate MOSFET (FGMOS) based squarer using square law characteristic of the FGMOS is proposed in this paper. The major advantages of the squarer are simplicity, rail-to-rail input dynamic range, low total harmonic distortion, and low power consumption. The proposed circuit is biased without body effect. The circuit is designed and simulated using SPICE in 0.25μm CMOS technology. The squarer is operated at the supply voltages of ±0.75V . The total harmonic distortion (THD) for the input signal 0.75Vpp at 25 KHz, and maximum power consumption were found to be less than 1% and 319μW respectively.

Keywords: Analog signal processing, floating gate MOSFETs, low-voltage, Spice, squarer.

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Authors: George C. Yao, Chao-Yu Tu, Wei-Chung Chen, Fung-Wen Kuo, Yu-Shan Chang

Abstract:

Building structures are subjected to both horizontal and vertical ground motions during earthquakes, but only the horizontal ground motion has been extensively studied and considered in design. Most of the prevailing seismic codes assume the vertical component to be 1/2 to 2/3 of the horizontal one. In order to understand the building responses from vertical ground motions, many earthquakes records are studied in this paper. System identification methods (ARX Model) are used to analyze the strong motions and to find out the characteristics of the vertical amplification factors and the natural frequencies of buildings. Analysis results show that the vertical amplification factors for high-rise buildings and low-rise building are 1.78 and 2.52 respectively, and the average vertical amplification factor of all buildings is about 2. The relationship between the vertical natural frequency and building height was regressed to a suggested formula in this study. The result points out an important message; the taller the building is, the greater chance of resonance of vertical vibration on the building will be.

Keywords: Vertical ground motion, vertical amplification factor, natural frequency, component.

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Authors: W. Benaatou, A. Latif

Abstract:

In this document we studied more in detail the Performances of the vertical handover in the networks WLAN, WiMAX, UMTS before studying of it the Procedure of Handoff Vertical, the whole buckled by simulations putting forward the performances of the handover in the heterogeneous networks. The goal of Vertical Handover is to carry out several accesses in real-time in the heterogeneous networks. This makes it possible a user to use several networks (such as WLAN UMTS andWiMAX) in parallel, and the system to commutate automatically at another basic station, without disconnecting itself, as if there were no cut and with little loss of data as possible.

Keywords: Vertical handoff, WLAN, UMTS, WIMAX, Heterogeneous.

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Authors: M. Yoneda

Abstract:

The purpose of this study is to identify human walking vertical force by using FFT power spectrum density from the experimental acceleration data of the human body. An experiment on human walking is carried out on a stationary floor especially paying attention to higher components of dynamic vertical walking force. Based on measured acceleration data of the human lumbar part, not only in-phase component with frequency of 2fw, 3fw, but also in-opposite-phase component with frequency of 0.5 fw, 1.5 fw, 2.5 fw where fw is the walking rate is observed. The vertical vibration of pedestrian bridge induced by higher components of human walking vertical force is also discussed in this paper. A full scale measurement for the existing pedestrian bridge with center span length of 33 m is carried out focusing on the resonance phenomenon due to higher components of human walking vertical force. Dynamic response characteristics excited by these vertical higher components of human walking are revealed from the dynamic design viewpoint of pedestrian bridge.

Keywords: Simplified method, Human walking vertical force, Higher component, Pedestrian bridge vibration.

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Authors: Yomna Amr Ahmed Lotfi Koraim, Dalia Moati Rasmi Elkhateeb

Abstract:

Vertical landscape is introduced in this study as an alternative innovative technology for urban sustainable developments for its diverse environmental, economic, and psycho-social advantages. The main aim is to investigate the social acceptance of vertical landscape in Cairo, Egypt. The study objectives were to explore the perceptions of residents concerning this certain phenomenon and their opinions about its implementation. Survey questionnaires were administrated to 60 male and female residents from the Greater Cairo area. Despite the various concerns expressed about the application of vertical landscape, there was a clear majority of approval about its suitability. This is quite encouraging for the prospect of vertical landscape implementation in Cairo, Egypt.

Keywords: Vertical landscape, green facades, social acceptance, sustainable urban development.

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Authors: Antonis Constantinides, Christos Yiallouras, Christakis Damianou

Abstract:

The application of today's semiconductor transistors in high power UHF DVB-T linear amplifiers has evolved significantly by utilizing LDMOS technology. This fact provides engineers with the option to design a single transistor signal amplifier which enables output power and linearity that was unobtainable previously using bipolar junction transistors or later type first generation MOSFETS. The quiescent current stability in terms of thermal variations of the LDMOS guarantees a robust operation in any topology of DVB-T signal amplifiers. Otherwise, progressively uncontrolled heat dissipation enhancement on the LDMOS case can degrade the amplifier’s crucial parameters in regards to the gain, linearity and RF stability, resulting in dysfunctional operation or a total destruction of the unit. This paper presents one more sophisticated approach from the traditional biasing circuits used so far in LDMOS DVB-T amplifiers. It utilizes a microprocessor control technology, providing stability in topologies where IDQ must be perfectly accurate.

Keywords: Amplifier, DVB-T, LDMOS, MOSFETS.

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Authors: Muhibul Haque Bhuyan, Quazi Deen Mohd Khosru

Abstract:

This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear equations are used to simulate the pocket profiles along the channel at the surface from the source and drain edges towards the center of the n-MOSFET. Then the effective doping concentration is derived and is used in the threshold voltage equation that is obtained by solving the Poisson-s equation in the depletion region at the surface. Simulated threshold voltages for various gate lengths fit well with the experimental data already published in the literature. The simulated result is compared with the two other pocket profiles used to derive the threshold voltage models of n-MOSFETs. The comparison shows that the linear model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices.

Keywords: Linear pocket profile, pocket implantation, nMOSFET, threshold voltage, short channel effect (SCE), reverse short channeleffect (RSCE).

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Authors: M. Azadbakht, B. Azadbakht, R. Janzade Galogah, A. Kiapei, H. Jafari

Abstract:

In this research, performance of rotavator with horizontal rotary axis and vertical rotary axis has been evaluated and compared. The mean weight diameter (MWD), cross-sectional area disturbed and cone index of soil investigated. Factorial experiments based on a randomized complete block with 18 treatments, three different velocities 2.2, 3.5, 6.1 km/h; three different depth of 5, 10, 15cm and with two rotary plows horizontal axis and vertical axis with three replications were used. Result showed that maximum MWD in 6.1 km/h and 15cm of depth were 55.6 and 52.5mm for horizontal axis rotavator, respectively. The minimum MWD in 2.2 km/h and 5cm of depth for vertical axis rotavator were 34.9 and 35.1mm, respectively. The values of cone index 1861.1 and 2339.5 kPa for vertical axis rotavator and horizontal axis rotavator were obtained, respectively, also the values of cross-sectional area disturbed 687 and 497.2cm² for vertical axis rotavator and horizontal axis rotavator were obtained, respectively.

Keywords: Horizontal rotary axis, vertical rotary axis, rotavator, MWD, cone index, cross-sectional area.

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Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

Abstract:

According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling.

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Authors: S. Matour, M. Mahdavinejad, R. Fayaz

Abstract:

Daylight utilization is a key factor in achieving visual and thermal comfort, and energy savings in integrated building design. However, lack of measured data related to this topic has become a major challenge with the increasing need for integrating lighting concepts and simulations in the early stages of design procedures. The current paper deals with the values of daylight illuminance on horizontal and south facing vertical surfaces; the data are estimated using IESNA model and measured values of the horizontal and vertical illuminance, and a regression model with an acceptable linear correlation is obtained. The resultant illuminance frequency curves are useful for estimating daylight availability on south facing surfaces in Tehran. In addition, the relationship between indirect vertical illuminance and the corresponding global horizontal illuminance is analyzed. A simple parametric equation is proposed in order to predict the vertical illumination on a shaded south facing surface. The equation correlates the ratio between the vertical and horizontal illuminance to the solar altitude and is used with another relationship for prediction of the vertical illuminance. Both equations show good agreement, which allows for calculation of indirect vertical illuminance on a south facing surface at any time throughout the year.

Keywords: Tehran daylight availability, horizontal illuminance, vertical illuminance, diffuse illuminance.

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Authors: M. Pasbani Khiavi, M. A. Ghorbani

Abstract:

This paper presents an analytical solution to get a reliable estimation of the hydrodynamic pressure on gravity dams induced by vertical component earthquake when solving the fluid and dam interaction problem. Presented analytical technique is presented for calculation of earthquake-induced hydrodynamic pressure in the reservoir of gravity dams allowing for water compressibility and wave absorption at the reservoir bottom. This new analytical solution can take into account the effect of bottom material on seismic response of gravity dams. It is concluded that because the vertical component of ground motion causes significant hydrodynamic forces in the horizontal direction on a vertical upstream face, responses to the vertical component of ground motion are of special importance in analysis of concrete gravity dams subjected to earthquakes.

Keywords: Dam, Reservoir, Analytical solution, Vertical component, Earthquake

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Authors: Three-Dimensional Modeling of a Twisted-Blade Darrieus Vertical-Axis Wind Turbine

Abstract:

A complete CAD procedure to model a twisted-bladed vertical-axis wind turbine (VAWT) is presented with the aim of determining some practical guidelines to be used for the generation of an easily-meshable CAD geometry to be adopted as the basis of both CFD and FEM numerical simulations.

Keywords: Vertical-axis wind turbine (VAWT), twisted blade, CAD, 3D modeling.

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Authors: K. E. Kaharudin, A. H. Hamidon, F. Salehuddin

Abstract:

Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In order to ensure that the transistor possess a superb turn-off characteristic, the subs-threshold swing (SS) must be kept at minimum value (60-90mV/dec). By utilizing SILVACO TCAD software, an n-channel vertical DG-MOSFET was successfully designed while keeping the sub-threshold swing (SS) value as minimum as possible. From the observation made, the value of sub-threshold swing (SS) was able to be varied by adjusting the height of the silicon pillar. The minimum value of sub-threshold swing (SS) was found to be 64.7mV/dec with threshold voltage (V_TH) of 0.895V. The ideal height of the vertical DG-MOSFET pillar was found to be at 0.265 µm.

Keywords: DG-MOSFET, pillar, SCE, vertical

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Authors: Said M. Easa, Shinya Kikuchi

Abstract:

When the profile information of an existing road is missing or not up-to-date and the parameters of the vertical alignment are needed for engineering analysis, the engineer has to recreate the geometric design features of the road alignment using collected profile data. The profile data may be collected using traditional surveying methods, global positioning systems, or digital imagery. This paper develops a method that estimates the parameters of the geometric features that best characterize the existing vertical alignments in terms of tangents and the expressions of the curve, that may be symmetrical, asymmetrical, reverse, and complex vertical curves. The method is implemented using an Excel-based optimization method that minimizes the differences between the observed profile and the profiles estimated from the equations of the vertical curve. The method uses a 'wireframe' representation of the profile that makes the proposed method applicable to all types of vertical curves. A secondary contribution of this paper is to introduce the properties of the equal-arc asymmetrical curve that has been recently developed in the highway geometric design field.

Keywords: Optimization, parameters, data, reverse, spreadsheet, vertical curves

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Authors: Kais Hafsaoui

Abstract:

In this paper, we propose to study the synthesis of the vertical dipole antenna over imperfect ground. The synthesis implementation-s method for this type of antenna permits to approach the appropriated radiance-s diagram. The used approach is based on neural network. Our main contribution in this paper is the extension of a synthesis model of this vertical dipole antenna over imperfect ground.

Keywords: Vertical dipole antenna, imperfect ground, neural network.

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Authors: M. Raciti Castelli, S. De Betta, E. Benini

Abstract:

The optimal grid spacing and turbulence model for the 2D numerical analysis of a vertical-axis water turbine (VAWaterT) operating in a 2 m/s freestream current has been investigated. The results of five different spatial domain discretizations and two turbulence models (k-ω SST and k-ε RNG) have been compared, in order to gain the optimal y+ parameter distribution along the blade walls during a full rotor revolution. The resulting optimal mesh has appeared to be quite similar to that obtained for the numerical analysis of a vertical-axis wind turbine.

Keywords: CFD, vertical axis water turbine, NACA 0025, blade y+.

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Authors: Seyed Abolhasan Naeini, Ali Namaei

Abstract:

This study presents the effect of prefabricated vertical drain system properties on embankment behavior by calculating the settlement, lateral displacement and induced excess pore pressure by numerical method. In order to investigate this behavior, three different prefabricated vertical drains have been simulated under an embankment. The finite element software PLAXIS has been carried out for analyzing the displacements and excess pore pressures. The results showed that the consolidation time and induced excess pore pressure are highly depended to the discharge capacity of the prefabricated vertical drain. The increase in the discharge capacity leads to decrease the consolidation process and the induced excess pore pressure. Moreover, it was seen that the vertical drains spacing does not have any significant effect on the consolidation time. However, the increase in the drains spacing would decrease the system stiffness.

Keywords: Vertical drain, prefabricated, consolidation, embankment.

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Authors: N. Shen, T. T. Le, H. Y. Yu, Z. X. Chen, K. T. Win, N. Singh, G. Q. Lo, D. -L. Kwong

Abstract:

In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.

Keywords: Nanowire (NW), Gate-all-around (GAA), polysilicon (poly-Si), thin-film transistor (TFT).

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Authors: S. Mehran, S. Rouhi, F.Rouzbahani, E. Haghgoo

Abstract:

In this paper dynamics of a vapour bubble generated due to a local energy input inside a vertical rigid cylinder and in the absence of buoyancy forces is investigated. Different ratios of the diameter of the rigid cylinder to the maximum radius of the bubble are considered. The Boundary Integral Equation Method is employed for numerical simulation of the problem. Results show that during the collapse phase of the bubble inside a vertical rigid cylinder, two liquid micro jets are developed on the top and bottom sides of the vapour bubble and are directed inward. Results also show that existence of a deposit rib inside the vertical rigid cylinder slightly increases the life time of the bubble. It is found that by increasing the ratio of the cylinder diameter to the maximum radius of the bubble, the rate of the growth and collapse phases of the bubble increases and the life time of the bubble decreases.

Keywords: Vapour bubble, Vertical rigid cylinder, Boundaryelement method.

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Authors: George D. Hatzigeorgiou, Nikos G. Pnevmatikos

Abstract:

This study examines the inelastic behavior of adjacent planar reinforced concrete (R.C.) frames subjected to strong ground motions. The investigation focuses on the effects of vertical ground motion on the seismic pounding. The examined structures are modeled and analyzed by RUAUMOKO dynamic nonlinear analysis program using reliable hysteretic models for both structural members and contact elements. It is found that the vertical ground motion mildly affects the seismic response of adjacent buildings subjected to structural pounding and, for this reason, it can be ignored from the displacement and interstorey drifts assessment. However, the structural damage is moderately affected by the vertical component of earthquakes.

Keywords: Nonlinear seismic behavior, reinforced concrete structures, structural pounding, vertical ground motions.

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Authors: Anna Bykalyuk, Frédéric Kuznik, Kévyn Johannes

Abstract:

In this paper the influence of a vertical plate’s thermal capacity is numerically investigated in order to evaluate the evolution of the thermal boundary layer structure, as well as the convective heat transfer coefficient and the velocity and temperature profiles. Whereas the heat flux of the heated vertical plate is evaluated under time depending boundary conditions. The main important feature of this problem is the unsteadiness of the physical phenomena. A 2D CFD model is developed with the Ansys Fluent 14.0 environment and is validated using unsteady data obtained for plasterboard studied under a dynamic temperature evolution. All the phenomena produced in the vicinity of the thermal conductive vertical plate (plasterboard) are analyzed and discussed. This work is the first stage of a holistic research on transient free convection that aims, in the future, to study the natural convection in the vicinity of a vertical plate containing Phase Change Materials (PCM).

Keywords: CFD modeling, natural convection, thermal conductive plate, time-depending boundary conditions.

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Authors: S. A. Hashemi, A. Khoshraftar

Abstract:

This paper presents the influence of the vertical seismic component on the non-linear dynamics analysis of three different structures. The subject structures were analyzed and designed according to recent codes. This paper considers three types of buildings: 5-, 10-, and 15-story buildings. The non-linear dynamics analysis of the structures with assuming elastic-perfectlyplastic behavior was performed using RAM PERFORM-3D software; the horizontal component was taken into consideration with and without the incorporation of the corresponding vertical component. Dynamic responses obtained for the horizontal component acting alone were compared with those obtained from the simultaneous application of both seismic components. The results show that the effect of the vertical component of ground motion may increase the axial load significantly in the interior columns and, consequently, the stories. The plastic mechanisms would be changed. The P-Delta effect is expected to increase. The punching base plate shear of the columns should be considered. Moreover, the vertical component increases the input energy when the structures exhibit inelastic behavior and are taller.

Keywords: Inelastic behavior, non-linear dynamic analysis, steel structure, vertical component.

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Authors: Gabriele Bedon, Marco Raciti Castelli, Ernesto Benini

Abstract:

An experimental campaign of measurements for a Darrieus vertical-axis wind turbine (VAWT) is presented for open field conditions. The turbine is characterized by a twisted bladed design, each blade being placed at a fixed distance from the rotational shaft. The experimental setup to perform the acquisitions is described. The results are lower than expected, due to the high influence of the wind shear.

Keywords: Vertical-axis wind turbine, Darrieus wind turbine, twisted blades, experimental measurements, wind shear.

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Authors: S. A. Hashemi, A. Khoshraftar

Abstract:

This paper presents the influence of the vertical seismic component on the non-linear dynamics analysis of three different structures. The subject structures were analyzed and designed according to recent codes. This paper considers three types of buildings: 5-, 10-, and 15-story buildings. The non-linear dynamics analysis of the structures with assuming elastic-perfectly-plastic behavior was performed using RAM PERFORM-3D software; the horizontal component was taken into consideration with and without the incorporation of the corresponding vertical component. Dynamic responses obtained for the horizontal component acting alone were compared with those obtained from the simultaneous application of both seismic components. The results show that the effect of the vertical component of ground motion may increase the axial load significantly in the interior columns and, consequently, the stories. The plastic mechanisms would be changed. The P-Delta effect is expected to increase. The punching base plate shear of the columns should be considered. Moreover, the vertical component increases the input energy when the structures exhibit inelastic behavior and are taller.

Keywords: Inelastic behavior, non-linear dynamic analysis, steel structure, vertical component.

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Authors: Tsung-Chia Chen

Abstract:

The orthogonal processes to shape the triangle steel plate into a equilateral vertical steel are examined by an incremental elasto-plastic finite-element method based on an updated Lagrangian formulation. The highly non-linear problems due to the geometric changes, the inelastic constitutive behavior and the boundary conditions varied with deformation are taken into account in an incremental manner. On the contact boundary, a modified Coulomb friction mode is specially considered. A weighting factor r-minimum is employed to limit the step size of loading increment to linear relation. In particular, selective reduced integration was adopted to formulate the stiffness matrix. The simulated geometries of verticality could clearly demonstrate the vertical processes until unloading. A series of experiments and simulations were performed to validate the formulation in the theory, leading to the development of the computer codes. The whole deformation history and the distribution of stress, strain and thickness during the forming process were obtained by carefully considering the moving boundary condition in the finite-element method. Therefore, this modeling can be used for judging whether a equilateral vertical steel can be shaped successfully. The present work may be expected to improve the understanding of the formation of the equilateral vertical steel.

Keywords: Elasto-plastic, finite element, orthogonal pressing process, vertical steel.

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