Search results for: random switching technique.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 3820

Search results for: random switching technique.

3820 Synchronization Technique for Random Switching Frequency Pulse-Width Modulation

Authors: Apinan Aurasopon, Worawat Sa-ngiavibool

Abstract:

This paper proposes a synchronized random switching frequency pulse width modulation (SRSFPWM). In this technique, the clock signal is used to control the random noise frequency which is produced by the feedback voltage of a hysteresis circuit. These make the triangular carrier frequency equaling to the random noise frequency in each switching period with the symmetrical positive and negative slopes of triangular carrier. Therefore, there is no error voltage in PWM signal. The PSpice simulated results shown the proposed technique improved the performance in case of low frequency harmonics of PWM signal comparing with conventional random switching frequency PWM.

Keywords: Random switching frequency pulse - width modulation.

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3819 Acoustic Noise Reduction in Single Phase SRM Drives by Random Switching Technique

Authors: Minh-Khai Nguyen, Young-Gook Jung, Young-Cheol Lim

Abstract:

It is known that if harmonic spectra are decreased, then acoustic noise also decreased. Hence, this paper deals with a new random switching strategy using DSP TMS320F2812 to decrease the harmonics spectra of single phase switched reluctance motor. The proposed method which combines random turn-on, turn-off angle technique and random pulse width modulation technique is shown. A harmonic spread factor (HSF) is used to evaluate the random modulation scheme. In order to confirm the effectiveness of the new method, the experimental results show that the harmonic intensity of output voltage for the proposed method is better than that for conventional methods.

Keywords: Single phase switched reluctance motor (SRM), harmonic spread factor (HSF), random switching technique.

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3818 Switching Behaviors of TiN/HfOx/Pt Based RRAM

Authors: B. B. Weng, Z. Fang, Z. X. Chen, X. P. Wang, G. Q. Lo, D. L. Kwong

Abstract:

Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief.

Keywords: HfOx, resistive switching, RRAM.

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3817 Comparison of Different Discontinuous PWM Technique for Switching Losses Reduction in Modular Multilevel Converters

Authors: Kaumil B. Shah, Hina Chandwani

Abstract:

The modular multilevel converter (MMC) is one of the advanced topologies for medium and high-voltage applications. In high-power, high-voltage MMC, a large number of switching power devices are required. These switching power devices (IGBT) considerable switching losses. This paper analyzes the performance of different discontinuous pulse width modulation (DPWM) techniques and compares the results against a conventional carrier based pulse width modulation method, in order to reduce the switching losses of an MMC. The DPWM reference wave can be generated by adding the zero-sequence component to the original (sine) reference modulation signal. The result of the addition gives the reference signal of DPWM techniques. To minimize the switching losses of the MMC, the clamping period is controlled according to the absolute value of the output load current. No switching is generated in the clamping period so overall switching of the power device is reduced. The simulation result of the different DPWM techniques is compared with conventional carrier-based pulse-width modulation technique.

Keywords: Modular multilevel converter, discontinuous pulse width modulation, switching losses, zero-sequence voltage.

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3816 Extended Low Power Bus Binding Combined with Data Sequence Reordering

Authors: Jihyung Kim, Taejin Kim, Sungho Park, Jun-Dong Cho

Abstract:

In this paper, we address the problem of reducing the switching activity (SA) in on-chip buses through the use of a bus binding technique in high-level synthesis. While many binding techniques to reduce the SA exist, we present yet another technique for further reducing the switching activity. Our proposed method combines bus binding and data sequence reordering to explore a wider solution space. The problem is formulated as a multiple traveling salesman problem and solved using simulated annealing technique. The experimental results revealed that a binding solution obtained with the proposed method reduces 5.6-27.2% (18.0% on average) and 2.6-12.7% (6.8% on average) of the switching activity when compared with conventional binding-only and hybrid binding-encoding methods, respectively.

Keywords: low power, bus binding, switching activity, multiple traveling salesman problem, data sequence reordering

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3815 Oxide Based Resistive Random Access Memory Device for High Density Non Volatile Memory Applications

Authors: Z. Fang, X. P. Wang, G. Q. Lo, D. L. Kwong

Abstract:

In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias.

Keywords: Bipolar switching, non volatile memory, resistive random access memory, 3-D stacking.

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3814 An Intelligent Scheme Switching for MIMO Systems Using Fuzzy Logic Technique

Authors: Robert O. Abolade, Olumide O. Ajayi, Zacheaus K. Adeyemo, Solomon A. Adeniran

Abstract:

Link adaptation is an important strategy for achieving robust wireless multimedia communications based on quality of service (QoS) demand. Scheme switching in multiple-input multiple-output (MIMO) systems is an aspect of link adaptation, and it involves selecting among different MIMO transmission schemes or modes so as to adapt to the varying radio channel conditions for the purpose of achieving QoS delivery. However, finding the most appropriate switching method in MIMO links is still a challenge as existing methods are either computationally complex or not always accurate. This paper presents an intelligent switching method for the MIMO system consisting of two schemes - transmit diversity (TD) and spatial multiplexing (SM) - using fuzzy logic technique. In this method, two channel quality indicators (CQI) namely average received signal-to-noise ratio (RSNR) and received signal strength indicator (RSSI) are measured and are passed as inputs to the fuzzy logic system which then gives a decision – an inference. The switching decision of the fuzzy logic system is fed back to the transmitter to switch between the TD and SM schemes. Simulation results show that the proposed fuzzy logic – based switching technique outperforms conventional static switching technique in terms of bit error rate and spectral efficiency.

Keywords: Channel quality indicator, fuzzy logic, link adaptation, MIMO, spatial multiplexing, transmit diversity.

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3813 Comparison of Different PWM Switching Modes of BLDC Motor as Drive Train of Electric Vehicles

Authors: A. Tashakori, M. Ektesabi

Abstract:

Electric vehicle (EV) is one of the effective solutions to control emission of greenhouses gases in the world. It is of interest for future transportation due to its sustainability and efficiency by automotive manufacturers. Various electrical motors have been used for propulsion system of electric vehicles in last decades. In this paper brushed DC motor, Induction motor (IM), switched reluctance motor (SRM) and brushless DC motor (BLDC) are simulated and compared. BLDC motor is recommended for high performance electric vehicles. PWM switching technique is implemented for speed control of BLDC motor. Behavior of different modes of PWM speed controller of BLDC motor are simulated in MATLAB/SIMULINK. BLDC motor characteristics are compared and discussed for various PWM switching modes under normal and inverter fault conditions. Comparisons and discussions are verified through simulation results.

Keywords: BLDC motor, PWM switching technique, in-wheel technology, electric vehicle.

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3812 A Novel Zero Voltage Transition Synchronous Buck Converter for Portable Application

Authors: S. Pattnaik, A. K. Panda, Aroul K., K. K. Mahapatra

Abstract:

This paper proposes a zero-voltage transition (ZVT) PWM synchronous buck converter, which is designed to operate at low output voltage and high efficiency typically required for portable systems. To make the DC-DC converter efficient at lower voltage, synchronous converter is an obvious choice because of lower conduction loss in the diode. The high-side MOSFET is dominated by the switching losses and it is eliminated by the soft switching technique. Additionally, the resonant auxiliary circuit designed is also devoid of the switching losses. The suggested procedure ensures an efficient converter. Theoretical analysis, computer simulation, and experimental results are presented to explain the proposed schemes.

Keywords: DC-DC Converter, Switching loss, Synchronous Buck, Soft switching, ZVT.

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3811 Design of Non-Blocking and Rearrangeable Modified Banyan Network with Electro-Optic MZI Switching Elements

Authors: Ghanshyam Singh, Tirtha Pratim Bhattacharjee, R. P. Yadav, V. Janyani

Abstract:

Banyan networks are really attractive for serving as the optical switching architectures due to their unique properties of small depth and absolute signal loss uniformity. The fact has been established that the limitations of blocking nature and the nonavailability of proper connections due to non-rearrangeable property can be easily ruled out using electro-optic MZI switches as basic switching elements. Combination of the horizontal expansion and vertical stacking of optical banyan networks is an appropriate scheme for constructing non-blocking banyan-based optical switching networks. The interconnected banyan switching fabrics (IBSF) have been considered and analyzed to best serve the purpose of optical switching with electro-optic MZI basic elements. The cross/bar state interchange for the switches has been facilitated by appropriate voltage switching or the by the switching of operating wavelength. The paper is dedicated to the modification of the basic switching element being used as well as the architecture of the switching network.

Keywords: MZI switch, Banyan network, Reconfigurable switches.

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3810 Optimal Switching Strategies for Tracking of Currents of Voltage Source Converters

Authors: R. Oloomi, M. A. Sadrnia

Abstract:

This paper proposes a new optimal feedback controller for voltage source converters VSC's, for current regulated voltage source converters, which allows compensate the harmonics of current produced by nonlinear loads and load reactive power. The aim of the present paper is to describe a novel switching signal generation technique called optimal controller which guarantees that the injected currents follow the reference currents determined by the compensation strategy, with the smallest possible tracking error and fixed switching frequency. It is compared with well-known hysteresis current controller HCC. The validity of presented method and its comparison with HCC is studied through simulation results.

Keywords: Hysteresis Current Controller, Optimal Controller, Switching pattern, Voltage Source Converter.

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3809 Performance Evaluation of a Neural Network based General Purpose Space Vector Modulator

Authors: A.Muthuramalingam, S.Himavathi

Abstract:

Space Vector Modulation (SVM) is an optimum Pulse Width Modulation (PWM) technique for an inverter used in a variable frequency drive applications. It is computationally rigorous and hence limits the inverter switching frequency. Increase in switching frequency can be achieved using Neural Network (NN) based SVM, implemented on application specific chips. This paper proposes a neural network based SVM technique for a Voltage Source Inverter (VSI). The network proposed is independent of switching frequency. Different architectures are investigated keeping the total number of neurons constant. The performance of the inverter is compared for various switching frequencies for different architectures of NN based SVM. From the results obtained, the network with minimum resource and appropriate word length is identified. The bit precision required for this application is identified. The network with 8-bit precision is implemented in the IC XCV 400 and the results are presented. The performance of NN based general purpose SVM with higher bit precision is discussed.

Keywords: NN based SVM, FPGA Implementation, LayerMultiplexing, NN structure and Resource Reduction, PerformanceEvaluation

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3808 Delay-dependent Stability Analysis for Uncertain Switched Neutral System

Authors: Lianglin Xiong, Shouming Zhong, Mao Ye

Abstract:

This paper considers the robust exponential stability issues for a class of uncertain switched neutral system which delays switched according to the switching rule. The system under consideration includes both stable and unstable subsystems. The uncertainties considered in this paper are norm bounded, and possibly time varying. Based on multiple Lyapunov functional approach and dwell-time technique, the time-dependent switching rule is designed depend on the so-called average dwell time of stable subsystems as well as the ratio of the total activation time of stable subsystems and unstable subsystems. It is shown that by suitably controlling the switching between the stable and unstable modes, the robust stabilization of the switched uncertain neutral systems can be achieved. Two simulation examples are given to demonstrate the effectiveness of the proposed method.

Keywords: Switched neutral system, exponential stability, multiple Lyapunov functional, dwell time technique, time-dependent switching rule.

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3807 Switching Studies on Ge15In5Te56Ag24 Thin Films

Authors: Diptoshi Roy, G. Sreevidya Varma, S. Asokan, Chandasree Das

Abstract:

Germanium Telluride based quaternary thin film switching devices with composition Ge15In5Te56Ag24, have been deposited in sandwich geometry on glass substrate with aluminum as top and bottom electrodes. The bulk glassy form of the said composition is prepared by melt quenching technique. In this technique, appropriate quantity of elements with high purity are taken in a quartz ampoule and sealed under a vacuum of 10-5 mbar. Then, it is allowed to rotate in a horizontal rotary furnace for 36 hours to ensure homogeneity of the melt. After that, the ampoule is quenched into a mixture of ice - water and NaOH to get the bulk ingot of the sample. The sample is then coated on a glass substrate using flash evaporation technique at a vacuum level of 10-6 mbar. The XRD report reveals the amorphous nature of the thin film sample and Energy - Dispersive X-ray Analysis (EDAX) confirms that the film retains the same chemical composition as that of the base sample. Electrical switching behavior of the device is studied with the help of Keithley (2410c) source-measure unit interfaced with Lab VIEW 7 (National Instruments). Switching studies, mainly SET (changing the state of the material from amorphous to crystalline) operation is conducted on the thin film form of the sample. This device is found to manifest memory switching as the device remains 'ON' even after the removal of the electric field. Also it is found that amorphous Ge15In5Te56Ag24 thin film unveils clean memory type of electrical switching behavior which can be justified by the absence of fluctuation in the I-V characteristics. The I-V characteristic also reveals that the switching is faster in this sample as no data points could be seen in the negative resistance region during the transition to on state and this leads to the conclusion of fast phase change during SET process. Scanning Electron Microscopy (SEM) studies are performed on the chosen sample to study the structural changes at the time of switching. SEM studies on the switched Ge15In5Te56Ag24 sample has shown some morphological changes at the place of switching wherein it can be explained that a conducting crystalline channel is formed in the device when the device switches from high resistance to low resistance state. From these studies it can be concluded that the material may find its application in fast switching Non-Volatile Phase Change Memory (PCM) Devices.

Keywords: Chalcogenides, vapor deposition, electrical switching, PCM.

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3806 A Very Efficient Pseudo-Random Number Generator Based On Chaotic Maps and S-Box Tables

Authors: M. Hamdi, R. Rhouma, S. Belghith

Abstract:

Generating random numbers are mainly used to create secret keys or random sequences. It can be carried out by various techniques. In this paper we present a very simple and efficient pseudo random number generator (PRNG) based on chaotic maps and S-Box tables. This technique adopted two main operations one to generate chaotic values using two logistic maps and the second to transform them into binary words using random S-Box tables. The simulation analysis indicates that our PRNG possessing excellent statistical and cryptographic properties.

Keywords: Chaotic map, Cryptography, Random Numbers, Statistical tests, S-box.

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3805 Relaxing Convergence Constraints in Local Priority Hysteresis Switching Logic

Authors: Mubarak Alhajri

Abstract:

This paper addresses certain inherent limitations of local priority hysteresis switching logic. Our main result establishes that under persistent excitation assumption, it is possible to relax constraints requiring strict positivity of local priority and hysteresis switching constants. Relaxing these constraints allows the adaptive system to reach optimality which implies the performance improvement. The unconstrained local priority hysteresis switching logic is examined and conditions for global convergence are derived.

Keywords: Adaptive control, convergence, hysteresis constant, hysteresis switching.

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3804 Implementation and Simulation of Half-Bridge Series Resonant Inverter in Zero Voltage Switching

Authors: Buket Turan Azizoğlu

Abstract:

In switch mode power inverters, small sized inverters can be obtained by increasing the switching frequency. Switching frequency increment causes high driver losses. Also, high dt di and dt dv produced by the switching action creates high Electromagnetic Interference (EMI) and Radio Frequency Interference (RFI). In this paper, a series half bridge series resonant inverter circuit is simulated and evaluated practically to demonstrate the turn-on and turn-off conditions during zero or close to zero voltage switching. Also, the reverse recovery current effects of the body diode of the MOSFETs were investigated by operating above and below resonant frequency.

Keywords: Driver losses, Half Bridge series resonant inverter, Zero Voltage Switching

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3803 Level Shifted Carrier Signal Based Scalar Random Pulse Width Modulation Algorithms for Cascaded Multilevel Inverter Fed Induction Motor Drive

Authors: M. Nayeemuddin, T. Bramhananda Reddy, M. Vijaya Kumar

Abstract:

Acoustic noise becoming ever more obnoxious radiated by voltage source inverter fed induction motor drive in modern and industrial applications. The drive utilized for industrial and modern applications should use “spread spectrum” innovation known as Random pulse width modulation (PWM) algorithms where acoustic noise emanates through the machine should be critically concerned. This paper illustrates three types of random PWM control algorithms with fixed switching frequency namely 1) Random modulating PWM 2) Random carrier PWM and 3) Random modulating-carrier PWM. The spectrum plots of the motor stator current demonstrate the strength and robustness of the proposed PWM algorithms. To affirm the proposed algorithms, experimental tests have been conducted using dSPACE rt1104 control board on a v/f control three phase induction motor drive fed by DC link cascaded multilevel inverter.

Keywords: Multilevel inverter, acoustic noise, CSVPWM, total harmonic distortion, random PWM algorithm.

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3802 The Strict Stability of Impulsive Stochastic Functional Differential Equations with Markovian Switching

Authors: Dezhi Liu Guiyuan Yang Wei Zhang

Abstract:

Strict stability can present the rate of decay of the solution, so more and more investigators are beginning to study the topic and some results have been obtained. However, there are few results about strict stability of stochastic differential equations. In this paper, using Lyapunov functions and Razumikhin technique, we have gotten some criteria for the strict stability of impulsive stochastic functional differential equations with markovian switching.

Keywords: Impulsive; Stochastic functional differential equation; Strict stability; Razumikhin technique.

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3801 Code-Switching in Facebook Chatting Among Maldivian Teenagers

Authors: Aaidha Hammad

Abstract:

This study examines the phenomenon of code switching among teenagers in the Maldives while they carry out conversations through Facebook in the form of “Facebook Chatting”. The current study aims at evaluating the frequency of code-switching and it investigates between what languages code-switching occurs. Besides the study identifies the types of words that are often codeswitched and the triggers for code switching. The methodology used in this study is mixed method of qualitative and quantitative approach. In this regard, the chat log of a group conversation between 10 teenagers was collected and analyzed. A questionnaire was also administered through online to 24 different teenagers from different corners of the Maldives. The age of teenagers ranged between 16 and 19 years. The findings of the current study revealed that while Maldivian teenagers chat in Facebook they very often code switch and these switches are most commonly between Dhivehi and English, but some other languages are also used to some extent. It also identified the different types of words that are being often code switched among the teenagers. Most importantly it explored different reasons behind code switching among the Maldivian teenagers in Facebook chatting.

Keywords: Code-switching, Facebook, Facebook chatting Maldivian teenagers.

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3800 A Comprehensive Evaluation of IGBTs Performance under Zero Current Switching

Authors: Ly. Benbahouche

Abstract:

Currently, several soft switching topologies have been studied to achieve high power switching efficiency, reduced cost, improved reliability and reduced parasites. It is well known that improvement in power electronics systems always depend on advanced in power devices. The IGBT has been successfully used in a variety of switching applications such as motor drives and appliance control because of its superior characteristics.

The aim of this paper is focuses on simulation and explication of the internal dynamics of IGBTs behaviour under the most popular soft switching schemas that is Zero Current Switching (ZCS) environments.

The main purpose of this paper is to point out some mechanisms relating to current tail during the turn-off and examination of the response at turn-off with variation of temperature, inductance L, snubber capacitors Cs, and bus voltage in order to achieve an improved understanding of internal carrier dynamics. It is shown that the snubber capacitor, the inductance and even the temperature controls the magnitude and extent of the tail current, hence the turn-off time (switching speed of the device).

Moreover, it has also been demonstrated that the ZCS switching can be utilized efficiently to improve and reduce the power losses as well as the turn-off time. Furthermore, the turn-off loss in ZCS was found to depend on the time of switching of the device.

Keywords: PT-IGBT, ZCS, turn-off losses, dV/dt.

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3799 A Comparative Analysis of Modulation Control Strategies for Cascade H-Bridge 11-Level Inverter

Authors: Joshi Manohar. V., Sujatha. P., Anjaneyulu K. S. R

Abstract:

The range of the output power is a very important and evident limitation of two-level inverters. In order to overcome this disadvantage, multilevel inverters are introduced. Recently, Cascade H-Bridge inverters have emerged as one of the popular converter topologies used in numerous industrial applications. The modulation switching strategies such as phase shifted carrier based Pulse Width Modulation (PWM) technique and Stair case modulation with Selective Harmonic Elimination (SHE) PWM technique are generally used. NR method is used to solve highly non linear transcendental equations which are formed by SHEPWM method. Generally NR method has a drawback of requiring good initial guess but in this paper a new approach is implemented for NR method with any random initial guess. A three phase CHB 11-level inverter is chosen for analysis. MATLAB/SIMULINK programming environment and harmonic profiles are compared. Finally this paper presents a method at fundamental switching frequency with least % THDV.

Keywords: Cascade H-bridge 11- level Inverter, NR method, Phase shifted carrier based pulse width modulation (PSCPWM), Selective Harmonic Elimination Pulse Width Modulation (SHEPWM), Total Harmonic Distortion (%THDv).

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3798 Comparison of Zero Voltage Soft Switching and Hard Switching Boost Converter with Maximum Power Point Tracking

Authors: N. Ravi Kumar, R. Kamalakannan

Abstract:

The inherent nature of normal boost converter has more voltage stress across the power electronics switch and ripple. The presented formation of the front end rectifier stage for a photovoltaic (PV) organization is mainly used to give the supply. Further increasing of the solar efficiency is achieved by connecting the zero voltage soft switching boost converter. The zero voltage boost converter is used to convert the low level DC voltage to high level DC voltage. The inherent nature of zero voltage switching boost converter is used to shrink the voltage tension across the power electronics switch and ripple. The input stage allows the determined power point tracking to be used to extract supreme power from the sun when it is available. The hardware setup was implemented by using PIC Micro controller (16F877A).

Keywords: Boost converter, duty cycle, hard switching, MOSFET, maximum power point tracking, photovoltaic, soft switching, zero voltage switching.

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3797 Multi-Level Pulse Width Modulation to Boost the Power Efficiency of Switching Amplifiers for Analog Signals with Very High Crest Factor

Authors: Jan Doutreloigne

Abstract:

The main goal of this paper is to develop a switching amplifier with optimized power efficiency for analog signals with a very high crest factor such as audio or DSL signals. Theoretical calculations show that a switching amplifier architecture based on multi-level pulse width modulation outperforms all other types of linear or switching amplifiers in that respect. Simulations on a 2 W multi-level switching audio amplifier, designed in a 50 V 0.35 mm IC technology, confirm its superior performance in terms of power efficiency. A real silicon implementation of this audio amplifier design is currently underway to provide experimental validation.

Keywords: Audio amplifier, multi-level switching amplifier, power efficiency, pulse width modulation, PWM, self-oscillating amplifier.

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3796 Integration of Resistive Switching Memory Cell with Vertical Nanowire Transistor

Authors: Xiang Li, Zhixian Chen, Zheng Fang, Aashit Kamath, Xinpeng Wang, Navab Singh, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We integrate TiN/Ni/HfO2/Si RRAM cell with a vertical gate-all-around (GAA) nanowire transistor to achieve compact 4F2 footprint in a 1T1R configuration. The tip of the Si nanowire (source of the transistor) serves as bottom electrode of the memory cell. Fabricated devices with nanowire diameter ~ 50nm demonstrate ultra-low current/power switching; unipolar switching with 10μA/30μW SET and 20μA/30μW RESET and bipolar switching with 20nA/85nW SET and 0.2nA/0.7nW RESET. Further, the switching current is found to scale with nanowire diameter making the architecture promising for future scaling.

Keywords: RRAM, 1T1R, gate-all-around FET, nanowire FET, vertical MOSFETs

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3795 A Novel Technique for Ferroresonance Identification in Distribution Networks

Authors: G. Mokryani, M. R. Haghifam, J. Esmaeilpoor

Abstract:

Happening of Ferroresonance phenomenon is one of the reasons of consuming and ruining transformers, so recognition of Ferroresonance phenomenon has a special importance. A novel method for classification of Ferroresonance presented in this paper. Using this method Ferroresonance can be discriminate from other transients such as capacitor switching, load switching, transformer switching. Wavelet transform is used for decomposition of signals and Competitive Neural Network used for classification. Ferroresonance data and other transients was obtained by simulation using EMTP program. Using Daubechies wavelet transform signals has been decomposed till six levels. The energy of six detailed signals that obtained by wavelet transform are used for training and trailing Competitive Neural Network. Results show that the proposed procedure is efficient in identifying Ferroresonance from other events.

Keywords: Competitive Neural Network, Ferroresonance, EMTP program, Wavelet transform.

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3794 A Supervisory Scheme for Step-Wise Safe Switching Controllers

Authors: Fotis N. Koumboulis, Maria P. Tzamtzi

Abstract:

A supervisory scheme is proposed that implements Stepwise Safe Switching Logic. The functionality of the supervisory scheme is organized in the following eight functional units: Step- Wise Safe Switching unit, Common controllers design unit, Experimentation unit, Simulation unit, Identification unit, Trajectory cruise unit, Operating points unit and Expert system unit. The supervisory scheme orchestrates both the off-line preparative actions, as well as the on-line actions that implement the Stepwise Safe Switching Logic. The proposed scheme is a generic tool, that may be easily applied for a variety of industrial control processes and may be implemented as an automation software system, with the use of a high level programming environment, like Matlab.

Keywords: Supervisory systems, safe switching, nonlinear systems.

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3793 Simulation of Sample Paths of Non Gaussian Stationary Random Fields

Authors: Fabrice Poirion, Benedicte Puig

Abstract:

Mathematical justifications are given for a simulation technique of multivariate nonGaussian random processes and fields based on Rosenblatt-s transformation of Gaussian processes. Different types of convergences are given for the approaching sequence. Moreover an original numerical method is proposed in order to solve the functional equation yielding the underlying Gaussian process autocorrelation function.

Keywords: Simulation, nonGaussian, random field, multivariate, stochastic process.

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3792 Simulation of a Double-Sided Axial Flux Brushless Dc Two-Phase Motor Dynamics

Authors: Abdolamir Nekoubin

Abstract:

The objective of this paper is to analyze the performance of a double-sided axial flux permanent magnet brushless DC (AFPM BLDC) motor with two-phase winding. To study the motor operation, a mathematical dynamic model has been proposed for motor, which became the basis for simulations that were performed using MATLAB/SIMULINK software package. The results of simulations were presented in form of the waveforms of selected quantities and the electromechanical characteristics performed by the motor. The calculation results show that the two-phase motor version develops smooth torque and reaches high efficiency. The twophase motor can be applied where more smooth torque is required. Finally a study on the influence of switching angle on motor performance shows that when advance switching technique is used, the motor operates with the highest efficiency.

Keywords: brushless DC motor, inverter, switching angle.

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3791 Resistive Switching in TaN/AlNx/TiN Cell

Authors: Hsin-Ping Huang, Shyankay Jou

Abstract:

Resistive switching of aluminum nitride (AlNx) thin film was demonstrated in a TaN/AlNx/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), RHRS/RLRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlNx/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlNx film.

Keywords: Aluminum nitride, nonvolatile memory, resistive switching, thin films.

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