Search results for: dual-mode CMOS analog multiplier

Authors: Abhijit Chandra, Sudipta Chattopadhyay

Abstract:

In this communication, we have made an attempt to design multiplier-less low-pass finite impulse response (FIR) filter with the aid of various mutation strategies of Differential Evolution (DE) algorithm. Impulse response coefficient of the designed FIR filter has been represented as sums or differences of powers of two. Performance of the proposed filter has been evaluated in terms of its frequency response and associated hardware cost. Supremacy of our approach has been substantiated by comparing our result with many of the existing multiplier-less filter design algorithms of recent interest. It has also been demonstrated that DE-optimized filter outperforms Genetic Algorithm (GA) based design by a large margin.  Hardware efficiency of our algorithm has further been validated by implementing those filters on a Field Programmable Gate Array (FPGA) chip.

Keywords: Convergence speed, Differential Evolution (DE), error histogram, finite impulse response (FIR) filter, total power of two (TPT), zero-valued filter coefficient (ZFC).

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Authors: T. Brettschneider, C. Dorrer, H. Suy, T. Braun, E. Jung, R. Hoofman, M. Bründel, R. Zengerle, F. Lärmer

Abstract:

We present an integration approach of a CMOS biosensor into a polymer based microfluidic environment suitable for mass production. It consists of a wafer-level-package for the silicon die and laser bonding process promoted by an intermediate hot melt foil to attach the sensor package to the microfluidic chip, without the need for dispensing of glues or underfiller. A very good condition of the sensing area was obtained after introducing a protection layer during packaging. A microfluidic flow cell was fabricated and shown to withstand pressures up to Δp = 780 kPa without leakage. The employed biosensors were electrically characterized in a dry environment.

Keywords: CMOS biosensor, laser bonding, silicon polymer integration, wafer level packaging.

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Authors: Sukhwinder Singh Billing, Sushma Gupta, Sukhjit Singh Dhaliwal

Abstract:

In the present paper, we investigate a differential subordination involving multiplier transformation related to a sector in the open unit disk E = {z : |z| < 1}. As special cases to our main result, certain sufficient conditions for strongly starlike and strongly convex functions are obtained.

Keywords: Analytic function, Multiplier transformation, Strongly starlike function, Strongly convex function.

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Authors: Kittipong Tripetch

Abstract:

This paper proposes for the first time symbolic formula of the power spectrum of CMOS Cross Couple Oscillator and its modified circuit. Many principles existed to derived power spectrum in microwave textbook such as impedance, admittance parameters, ABCD, H parameters, etc. It can be compared by graph of power spectrum which methodology is the best from the point of view of practical measurement setup such as condition of impedance parameter which used superposition of current to derived (its current injection at the other port of the circuit is zero, which is impossible in reality). Four graphs of impedance parameters of cross couple oscillator are proposed. After that four graphs of scattering parameters of CMOS cross coupled oscillator will be shown.

Keywords: Optimization, power spectrum, impedance parameter, scattering parameter.

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Authors: Arash Azizi Mazreah, Mohammad Reza Sahebi, Mohammad T. Manzuri Shalmani

Abstract:

To help overcome limits to the density of conventional SRAMs and leakage current of SRAM cell in nanoscaled CMOS technology, we have developed a four-transistor SRAM cell. The newly developed CMOS four-transistor SRAM cell uses one word-line and one bit-line during read/write operation. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 19% smaller than a conventional six-transistor cell using same design rules. Also the leakage current of new cell is 60% smaller than a conventional sixtransistor SRAM cell. Simulation result in 65nm CMOS technology shows new cell has correct operation during read/write operation and idle mode.

Keywords: SRAM Cell, leakage current, cell area.

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Authors: Fasil Endalamaw

Abstract:

Digital magnitude comparators based on Gate Diffusion Input (GDI) implementation technique are high speed and area-efficient, and they consume less power as compared to other implementation techniques. However, they are less efficient for some logic gates and have no full voltage swing. In this paper, we made a performance comparison between the GDI implementation technique and other implementation methods, such as Static CMOS, Pass Transistor Logic (PTL), and Transmission Gate (TG) in 90 nm, 120 nm, and 180 nm CMOS technologies using BSIM4 MOS model. We proposed a methodology (hybrid implementation) of implementing digital magnitude comparators which significantly improved the power, speed, area, and voltage swing requirements. Simulation results revealed that the hybrid implementation of digital magnitude comparators show a 10.84% (power dissipation), 41.6% (propagation delay), 47.95% (power-delay product (PDP)) improvement compared to the usual GDI implementation method. We used Microwind & Dsch Version 3.5 as well as the Tanner EDA 16.0 tools for simulation purposes.

Keywords: Efficient, gate diffusion input, high speed, low power, CMOS.

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Authors: Rishikesh Pandey, Maneesha Gupta

Abstract:

A new low-voltage floating gate MOSFET (FGMOS) based squarer using square law characteristic of the FGMOS is proposed in this paper. The major advantages of the squarer are simplicity, rail-to-rail input dynamic range, low total harmonic distortion, and low power consumption. The proposed circuit is biased without body effect. The circuit is designed and simulated using SPICE in 0.25μm CMOS technology. The squarer is operated at the supply voltages of ±0.75V . The total harmonic distortion (THD) for the input signal 0.75Vpp at 25 KHz, and maximum power consumption were found to be less than 1% and 319μW respectively.

Keywords: Analog signal processing, floating gate MOSFETs, low-voltage, Spice, squarer.

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Authors: Spyridon Nikolaidis

Abstract:

A modeling approach for CMOS gates is presented based on the use of the equivalent inverter. A new model for the inverter has been developed using a simplified transistor current model which incorporates the nanoscale effects for the planar technology. Parametric expressions for the output voltage are provided as well as the values of the output and supply current to be compatible with the CCS technology. The model is parametric according the input signal slew, output load, transistor widths, supply voltage, temperature and process. The transistor widths of the equivalent inverter are determined by HSPICE simulations and parametric expressions are developed for that using a fitting procedure. Results for the NAND gate shows that the proposed approach offers sufficient accuracy with an average error in propagation delay about 5%.

Keywords: CMOS gate modeling, Inverter modeling, transistor current model, timing model.

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Authors: AL.AL, M. B. I. Reaz, S. M. A. Motakabber, Mohd Alauddin Mohd Ali

Abstract:

Nowadays it is a trend for electronic circuit designers to integrate all system components on a single-chip. This paper proposed the design of a single-chip proportional to absolute temperature (PTAT) sensor including a voltage reference circuit using CEDEC 0.18m CMOS Technology. It is a challenge to design asingle-chip wide range linear response temperature sensor for many applications. The channel widths between the compensation transistor and the reference transistor are critical to design the PTAT temperature sensor circuit. The designed temperature sensor shows excellent linearity between -100°C to 200° and the sensitivity is about 0.05mV/°C. The chip is designed to operate with a single voltage source of 1.6V.

Keywords: PTAT, single-chip circuit, linear temperature sensor, CMOS technology.

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Authors: Dan Ohev Zion, Alon Cohen

Abstract:

In recent years, the presence of short-range millimeter-wave radar in civil application has increased significantly. Autonomous driving, security, 3D imaging and high data rate communication systems are a few examples. The next challenge is the integration inside small form-factor devices, such as smartphones (e.g. gesture recognition). The main challenge is implementation of a truly low-power, low-complexity high-resolution radar. The most popular approach is the Frequency Modulated Continuous Wave (FMCW) radar, with an analog multiplication front-end. In this paper, we present an approach for adaptive estimation and correction of impairments of such front-end, specifically implemented using the Six-Port Device (SPD) as the multiplier element. The proposed algorithm was simulated and implemented on a 60 GHz radar lab prototype.

Keywords: Radar, millimeter-wave, six-port, FMCW Radar, IQ mismatch.

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Authors: Krzysztof Wawryn, Robert Suszyński, Bogdan Strzeszewski

Abstract:

This paper presents two prototypes of low power low voltage current mode 9 bit pipelined a/d converters. The first and the second converters are configured of 1.5 bit and 2.5 bit stages, respectively. The a/d converter structures are composed of current mode building blocks and final comparator block which converts the analog current signal into digital voltage signal. All building blocks have been designed in CMOS AMS 0.35μm technology, then simulated to verify proposed concept. The performances of both converters are compared to performances of known current mode and voltage mode switched capacitance converter structures. Low power consumption and small chip area are advantages of the proposed converters.

Keywords: Pipelined converter, a/d converter, low power, lowvoltage, current mode.

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Authors: Yngvar Berg, Mehdi Azadmehr

Abstract:

In this paper we present a linear autozeroing ultra lowvoltage amplifier. The autozeroing performed by all ULV circuits is important to reduce the impact of noise and especially avoid power supply noise in mixed signal low-voltage CMOS circuits. The simulated data presented is relevant for a 90nm TSMC CMOS process.

Keywords: Low-voltage, trans conductance amplifier, linearity, floating-gate.

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Authors: Agord M. Pinto Jr., Yuzo Iano, Leandro T. Manera, Raphael R. N. Souza

Abstract:

This paper describes an optimization tool-based design strategy for a Current Mode Logic CML divide-by-2 circuit. Representing a building block for output frequency generation in a RFID protocol based-frequency synthesizer, the circuit was designed to minimize the power consumption for driving of multiple loads with unbalancing (at transceiver level). Implemented with XFAB XC08 180 nm technology, the circuit was optimized through MunEDA WiCkeD tool at Cadence Virtuoso Analog Design Environment ADE.

Keywords: Divide-by-2 circuit, CMOS technology, PLL phase locked-loop, optimization tool, CML current mode logic, RF transceiver.

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Authors: Ankit Mitra

Abstract:

An adder is one of the most integral component of a digital system like a digital signal processor or a microprocessor. Being an extremely computationally intensive part of a system, the optimization for speed and power consumption of the adder is of prime importance. In this paper we have designed a 1 bit full adder cell based on dynamic TSPC logic to achieve high speed operation. A high threshold voltage sleep transistor is used to reduce the static power dissipation in standby mode. The circuit is designed and simulated in TSPICE using TSMC 180nm CMOS process. Average power consumption, delay and power-delay product is measured which showed considerable improvement in performance over the existing full adder designs.

Keywords: CMOS, TSPC, MTCMOS, ALU, Clock gating, power gating, pipelining.

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Authors: M. Geetha Priya, K. Baskaran, S. Srinivasan

Abstract:

Digital systems are said to be constructed using basic logic gates. These gates are the NOR, NAND, AND, OR, EXOR & EXNOR gates. This paper presents a robust three transistors (3T) based NAND and NOR gates with precise output logic levels, yet maintaining equivalent performance than the existing logic structures. This new set of 3T logic gates are based on CMOS inverter and Pass Transistor Logic (PTL). The new universal logic gates are characterized by better speed and lower power dissipation which can be straightforwardly fabricated as memory ICs for high performance computer networks. The simulation tests were performed using standard BPTM 22nm process technology using SYNOPSYS HSPICE. The 3T NAND gate is evaluated using C17 benchmark circuit and 3T NOR is gate evaluated using a D-Latch. According to HSPICE simulation in 22 nm CMOS BPTM process technology under given conditions and at room temperature, the proposed 3T gates shows an improvement of 88% less power consumption on an average over conventional CMOS logic gates. The devices designed with 3T gates will make longer battery life by ensuring extremely low power consumption.

Keywords: Low power, CMOS, pass-transistor, flash memory, logic gates.

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Authors: Zina Saheb, Ezz El-Masry

Abstract:

As the Silicon oxide scaled down in MOSFET technology to few nanometers, gate Direct Tunneling (DT) in Floating gate (FGMOSFET) devices has become a major concern for analog designers. FGMOSFET has been used in many low-voltage and low-power applications, however, there is no accurate model that account for DT gate leakage in nano-scale. This paper studied and analyzed different simulation models for FGMOSFET using TSMC 90-nm technology. The simulation results for FGMOSFET cascade current mirror shows the impact of DT on circuit performance in terms of current and voltage without the need for fabrication. This works shows the significance of using an accurate model for FGMOSFET in nan-scale technologies.

Keywords: CMOS transistor, direct-tunneling current, floatinggate, gate-leakage current, simulation model.

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Authors: E. Farshidi, N. Ahmadpoor

Abstract:

In this paper, a alternative structure method for continuous time sigma delta modulator is presented. In this modulator for implementation of integrators in loop filter second generation current conveyors are employed. The modulator is designed in CMOS technology and features low power consumption (<2.8mW), low supply voltage (±1.65), wide dynamic range (>65db), and with 180khZ bandwidth. Simulation results confirm that this design is suitable for data converters.

Keywords: Current Conveyor, continuous, sigma delta, MOS, modulator

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Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

Although silicon photonic devices provide a significantly larger bandwidth and dissipate a substantially less power than the electronic devices, they suffer from a large size due to the fundamental diffraction limit and the weak optical response of Si. A potential solution is to exploit Si plasmonics, which may not only miniaturize the photonic device far beyond the diffraction limit, but also enhance the optical response in Si due to the electromagnetic field confinement. In this paper, we discuss and summarize the recently developed metal-insulator-Si-insulator-metal nanoplasmonic waveguide as well as various passive and active plasmonic components based on this waveguide, including coupler, bend, power splitter, ring resonator, MZI, modulator, detector, etc. All these plasmonic components are CMOS compatible and could be integrated with electronic and conventional dielectric photonic devices on the same SOI chip. More potential plasmonic devices as well as plasmonic nanocircuits with complex functionalities are also addressed.

Keywords: Silicon nanoplasmonics, Silicon nanophotonics, Onchip integration, CMOS

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Authors: R .H. Talwekar, S. S Limaye

Abstract:

The designing of charge pump with high gain Op- Amp is a challenging task for getting faithful response .Design of high performance phase locked loop require ,a design of high performance charge pump .We have designed a operational amplifier for reducing the error caused by high speed glitch in a transistor and mismatch currents . A separate Op-Amp has designed in 180 nm CMOS technology by CADENCE VIRTUOSO tool. This paper describes the design of high performance charge pump for GHz CMOS PLL targeting orthogonal frequency division multiplexing (OFDM) application. A high speed low power consumption Op-Amp with more than 500 MHz bandwidth has designed for increasing the speed of charge pump in Phase locked loop.

Keywords: Charge pump (CP) Orthogonal frequency divisionmultiplexing (OFDM), Phase locked loop (PLL), Phase frequencydetector (PFD), Voltage controlled oscillator (VCO),

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Authors: Wee Leong Son, Hasmayadi Abdul Majid, Rohana Musa

Abstract:

This paper study the segmented split capacitor Digital-to-Analog Converter (DAC) implemented in a differentialtype 12-bit Successive Approximation Analog-to-Digital Converter (SA-ADC). The series capacitance split array method employed as it reduced the total area of the capacitors required for high resolution DACs. A 12-bit regular binary array structure requires 2049 unit capacitors (Cs) while the split array needs 127 unit Cs. These results in the reduction of the total capacitance and power consumption of the series split array architectures as to regular binary-weighted structures. The paper will show the 12-bit DAC series split capacitor with 4-bit thermometer coded DAC architectures as well as the simulation and measured results.

Keywords: Successive Approximation Register Analog-to- Digital Converter, SAR ADC, Low voltage ADC.

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Authors: J. S. Kim

Abstract:

This paper presents a 0.13-µm Complementary Metal-Oxide Semiconductor (CMOS) vector modulator for beamforming system. The vector modulator features a 360° phase and gain range of -10 dB to 10 dB with a root mean square phase and amplitude error of only 2.2° and 0.45 dB, respectively. These features make it a suitable for wireless backhaul system in the 5 GHz industrial, scientific, and medical (ISM) bands. It draws a current of 20.4 mA from a 1.2 V supply. The total chip size is 1.87x1.34 mm².

Keywords: CMOS, vector modulator, beamforming, wireless backhaul, ISM.

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Authors: Arthur David Snider, Laiq Azam

Abstract:

The classic problem of recovering arbitrary values of a band-limited signal from its samples has an added complication in software radio applications; namely, the resampling calculations inevitably fold aliases of the analog signal back into the original bandwidth. The phenomenon is quantified by the spur-free dynamic range. We demonstrate how a novel application of the Remez (Parks- McClellan) algorithm permits optimal signal recovery and SFDR, far surpassing state-of-the-art resamplers.

Keywords: Sampling methods, Signal sampling, Digital radio, Digital-analog conversion.

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Authors: Arash Azizi Mazreah, Mohammad T. Manzuri Shalmani, Hamid Barati, Ali Barati

Abstract:

This paper presents a novel CMOS four-transistor SRAM cell for very high density and low power embedded SRAM applications as well as for stand-alone SRAM applications. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 20% smaller than a conventional six-transistor cell using same design rules. Also proposed cell uses two word-lines and one pair bit-line. Read operation perform from one side of cell, and write operation perform from another side of cell, and swing voltage reduced on word-lines thus dynamic power during read/write operation reduced. The fabrication process is fully compatible with high-performance CMOS logic technologies, because there is no need to integrate a poly-Si resistor or a TFT load. HSPICE simulation in standard 0.25μm CMOS technology confirms all results obtained from this paper.

Keywords: Positive feedback, leakage current, read operation, write operation, dynamic energy consumption.

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Authors: B. Mahmoud, M.H. Bedoui, R. Raychev, H. Essabbah

Abstract:

We present in this paper an acquisition and treatment system designed for semi-analog Gamma-camera. It consists of a nuclear medical Image Acquisition, Treatment and Display chain(IATD) ensuring the acquisition, the treatment of the signals(resulting from the Gamma-camera detection head) and the scintigraphic image construction in real time. This chain is composed by an analog treatment board and a digital treatment board. We describe the designed systems and the digital treatment algorithms in which we have improved the performance and the flexibility. The digital treatment algorithms are implemented in a specific reprogrammable circuit FPGA (Field Programmable Gate Array).interface for semi-analog cameras of Sopha Medical Vision(SMVi) by taking as example SOPHY DS7. The developed system consists of an Image Acquisition, Treatment and Display (IATD) ensuring the acquisition and the treatment of the signals resulting from the DH. The developed chain is formed by a treatment analog board and a digital treatment board designed around a DSP [2]. In this paper we have presented the architecture of a new version of our chain IATD in which the integration of the treatment algorithms is executed on an FPGA (Field Programmable Gate Array)

Keywords: Nuclear medical image, scintigraphic image, digitaltreatment, linearity, spectrometry, FPGA.

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Authors: Y. Ni, K. Sebri

Abstract:

The practical implementation of audio-video coupled speech recognition systems is mainly limited by the hardware complexity to integrate two radically different information capturing devices with good temporal synchronisation. In this paper, we propose a solution based on a smart CMOS image sensor in order to simplify the hardware integration difficulties. By using on-chip image processing, this smart sensor can calculate in real time the X/Y projections of the captured image. This on-chip projection reduces considerably the volume of the output data. This data-volume reduction permits a transmission of the condensed visual information via the same audio channel by using a stereophonic input available on most of the standard computation devices such as PC, PDA and mobile phones. A prototype called VMIKE (Visio-Microphone) has been designed and realised by using standard 0.35um CMOS technology. A preliminary experiment gives encouraged results. Its efficiency will be further investigated in a large variety of applications such as biometrics, speech recognition in noisy environments, and vocal control for military or disabled persons, etc.

Keywords: Audio-Visual Speech recognition, CMOS Smartsensor, On-Chip image processing.

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Authors: Sanghoon Park, Kijin Kim, Kwangho Ahn

Abstract:

An active RC filters with a 880 / 1760 MHz dual bandwidth tuning ability is present for 60 GHz unlicensed band applications. A third order Butterworth low-pass filter utilizes two Cherry-Hooper amplifiers to satisfy the very high bandwidth requirements of an amplifier. The low-pass filter is fabricated in 90nm standard CMOS process. Drawing 6.7 mW from 1.2 V power supply, the low frequency gains of the filter are -2.5 and -4.1 dB, and the output third order intercept points (OIP3) are +2.2 and +1.9 dBm for the single channel and channel bonding conditions, respectively.

Keywords: Butterworth filter, active RC, 60 GHz, CMOS, dual bandwidth, Cherry-Hooper amplifier.

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Authors: Yu-Sheng Lee, Qi An

Abstract:

Offset mismatch, gain mismatch, and time-skew error between time-interleaved channels limit the performance of time-interleaved analog-to-digital converters (TIADC). This paper focused on the time-skew error. A new technique for calibrating time-skew error in M-channels TIADC is described, and simulation results are also presented.

Keywords: Calibration, time-skew error, time-interleavedanalog-to-digital converters.

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Authors: Khalil Monfaredi, Hassan Faraji Baghtash, Majid Abbasi

Abstract:

In this paper a novel high output impedance, low input impedance, wide bandwidth, very simple current mirror with input and output voltage requirements less than that of a simple current mirror is presented. These features are achieved with very simple structure avoiding extra large node impedances to ensure high bandwidth operation. The circuit's principle of operation is discussed and compared to simple and low voltage cascode (LVC) current mirrors. Such outstanding features of this current mirror as high output impedance ~384K, low input impedance~6.4, wide bandwidth~178MHz, low input voltage ~ 362mV, low output voltage ~ 38mV and low current transfer error ~4% (all at 50μA) makes it an outstanding choice for high performance applications. Simulation results in BSIM 0.35μm CMOS technology with HSPICE are given in comparison with simple, and LVC current mirrors to verify and validate the performance of the proposed current mirror.

Keywords: Analog circuits, Current mirror, high frequency, Low power, Low voltage.

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Authors: Ebrahim Farshidi

Abstract:

This paper presents a new circuit arrangement for a current-mode Wheatstone bridge that is suitable for low-voltage integrated circuits implementation. Compared to the other proposed circuits, this circuit features severe reduction of the elements number, low supply voltage (1V) and low power consumption (<350uW). In addition, the circuit has favorable nonlinearity error (<0.35%), operate with multiple sensors and works by single supply voltage. The circuit employs MOSFET transistors, so it can be used for standard CMOS fabrication. Simulation results by HSPICE show high performance of the circuit and confirm the validity of the proposed design technique.

Keywords: Wheatstone bridge, current-mode, low-voltage, MOS.

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Authors: Thiago Brito Bezerra, Mauro Lopes de Freitas, Waldir Sabino da Silva Júnior

Abstract:

The Sigma-Delta A/D converters have been proposed as a practical application for A/D conversion at high rates because of its simplicity and robustness to imperfections in the circuit, also because the traditional converters are more difficult to implement in VLSI technology. These difficulties with conventional conversion methods need precise analog components in their filters and conversion circuits, and are more vulnerable to noise and interference. This paper aims to analyze the architecture, function and application of Analog-Digital converters (A/D) Sigma-Delta to overcome these difficulties, showing some simulations using the Simulink software and Multisim.

Keywords: Analysis, Oversampling Modulator, A/D converters, Sigma-Delta.

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