Search results for: double gate (DG)
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 534

Search results for: double gate (DG)

504 Two-dimensional Analytical Drain Current Model for Multilayered-Gate Material Engineered Trapezoidal Recessed Channel(MLGME-TRC) MOSFET: a Novel Design

Authors: Priyanka Malik A, Rishu Chaujar B, Mridula Gupta C, R.S. Gupta D

Abstract:

In this paper, for the first time, a two-dimensional (2D) analytical drain current model for sub-100 nm multi-layered gate material engineered trapezoidal recessed channel (MLGMETRC) MOSFET: a novel design is presented and investigated using ATLAS and DEVEDIT device simulators, to mitigate the large gate leakages and increased standby power consumption that arise due to continued scaling of SiO2-based gate dielectrics. The twodimensional (2D) analytical model based on solution of Poisson-s equation in cylindrical coordinates, utilizing the cylindrical approximation, has been developed which evaluate the surface potential, electric field, drain current, switching metric: ION/IOFF ratio and transconductance for the proposed design. A good agreement between the model predictions and device simulation results is obtained, verifying the accuracy of the proposed analytical model.

Keywords: ATLAS, DEVEDIT, NJD, MLGME- TRCMOSFET.

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503 Improvement of Short Channel Effects in Cylindrical Strained Silicon Nanowire Transistor

Authors: Fatemeh Karimi, Morteza Fathipour, Hamdam Ghanatian, Vala Fathipour

Abstract:

In this paper we investigate the electrical characteristics of a new structure of gate all around strained silicon nanowire field effect transistors (FETs) with dual dielectrics by changing the radius (RSiGe) of silicon-germanium (SiGe) wire and gate dielectric. Indeed the effect of high-κ dielectric on Field Induced Barrier Lowering (FIBL) has been studied. Due to the higher electron mobility in tensile strained silicon, the n-type FETs with strained silicon channel have better drain current compare with the pure Si one. In this structure gate dielectric divided in two parts, we have used high-κ dielectric near the source and low-κ dielectric near the drain to reduce the short channel effects. By this structure short channel effects such as FIBL will be reduced indeed by increasing the RSiGe, ID-VD characteristics will be improved. The leakage current and transfer characteristics, the threshold-voltage (Vt), the drain induced barrier height lowering (DIBL), are estimated with respect to, gate bias (VG), RSiGe and different gate dielectrics. For short channel effects, such as DIBL, gate all around strained silicon nanowire FET have similar characteristics with the pure Si one while dual dielectrics can improve short channel effects in this structure.

Keywords: SNWT (silicon nanowire transistor), Tensile Strain, high-κ dielectric, Field Induced Barrier Lowering (FIBL), cylindricalnano wire (CW), drain induced barrier lowering (DIBL).

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502 Ion-Acoustic Double Layer in a Plasma with Two- Temperature Nonisothermal Electrons and Charged Dust Grains

Authors: Basudev Ghosh, Sreyasi Banerjee

Abstract:

Using the pseudopotential technique the Sagdeev potential equation has been derived in a plasma consisting of twotemperature nonisothermal electrons, negatively charged dust grains and warm positive ions. The study shows that the presence of nonisothermal two-temperature electrons and charged dust grains have significant effects on the excitation and structure of the ionacoustic double layers in the model plasma under consideration. Only compressive type double layer is obtained in the present plasma model. The double layer solution has also been obtained by including higher order nonlinearity and nonisothermality, which is shown to modify the amplitude and deform the shape of the double layer.

Keywords: Two temperature non-isothermal electrons and charged dust grains.

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501 Application of Double Side Approach Method on Super Elliptical Winkler Plate

Authors: Hsiang-Wen Tang, Cheng-Ying Lo

Abstract:

In this study, the static behavior of super elliptical Winkler plate is analyzed by applying the double side approach method. The lack of information about super elliptical Winkler plates is the motivation of this study and we use the double side approach method to solve this problem because of its superior ability on efficiently treating problems with complex boundary shape. The double side approach method has the advantages of high accuracy, easy calculation procedure and less calculation load required. Most important of all, it can give the error bound of the approximate solution. The numerical results not only show that the double side approach method works well on this problem but also provide us the knowledge of static behavior of super elliptical Winkler plate in practical use.

Keywords: Super elliptical Winkler Plate, double side approach method, error bound.

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500 Simulation Study of Lateral Trench Gate Power MOSFET on 4H-SiC

Authors: Yashvir Singh, Mayank Joshi

Abstract:

A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.

Keywords: 4H-SiC, lateral, trench-gate, power MOSFET.

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499 Structural Monitoring and Control During Support System Replacement of a Historical Gate

Authors: Ahmet Turer

Abstract:

Middle-gate is located in Hasankeyf, Batman dating back to 1800 BC and is one of the important historical structures in Turkey. The ancient structure has suffered major structural cracks due to aging as well as lateral pressure of a cracked rock which is predicted to be about 100 tons. The existing support system was found to be inadequate to support the load especially after a recent rock fall in the close vicinity. Concerns were increased since the existing support system that is integral with a damaged and cracked gate wall needed to be replaced by a new support system. The replacement process must be carefully monitored by crackmeters and control mechanisms should be integrated to prevent cracks to expand while the same crack width needs to be maintained after the operation. The control system and actions taken during the intervention are explained in this paper.

Keywords: structural control, crack width, replacement, support

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498 Experimental Performance and Numerical Simulation of Double Glass Wall

Authors: Thana Ananacha

Abstract:

This paper reports the numerical and experimental performances of Double Glass Wall are investigated. Two configurations were considered namely, the Double Clear Glass Wall (DCGW) and the Double Translucent Glass Wall (DTGW). The coupled governing equations as well as boundary conditions are solved using the finite element method (FEM) via COMSOLTM Multiphysics. Temperature profiles and flow field of the DCGW and DTGW are reported and discussed. Different constant heat fluxes were considered as 400 and 800 W.m-2 the corresponding initial condition temperatures were 30.5 and 38.5ºC respectively. The results show that the simulation results are in agreement with the experimental data. Conclusively, the model considered in this study could reasonable be used simulate the thermal and ventilation performance of the DCGW and DTGW configurations.

Keywords: Thermal simulation, Double Glass Wall, Velocity field.

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497 Design and Analysis of Low-Power, High Speed and Area Efficient 2-Bit Digital Magnitude Comparator in 90nm CMOS Technology Using Gate Diffusion Input

Authors: Fasil Endalamaw

Abstract:

Digital magnitude comparators based on Gate Diffusion Input (GDI) implementation technique are high speed and area-efficient, and they consume less power as compared to other implementation techniques. However, they are less efficient for some logic gates and have no full voltage swing. In this paper, we made a performance comparison between the GDI implementation technique and other implementation methods, such as Static CMOS, Pass Transistor Logic (PTL), and Transmission Gate (TG) in 90 nm, 120 nm, and 180 nm CMOS technologies using BSIM4 MOS model. We proposed a methodology (hybrid implementation) of implementing digital magnitude comparators which significantly improved the power, speed, area, and voltage swing requirements. Simulation results revealed that the hybrid implementation of digital magnitude comparators show a 10.84% (power dissipation), 41.6% (propagation delay), 47.95% (power-delay product (PDP)) improvement compared to the usual GDI implementation method. We used Microwind & Dsch Version 3.5 as well as the Tanner EDA 16.0 tools for simulation purposes.

Keywords: Efficient, gate diffusion input, high speed, low power, CMOS.

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496 Thermohydraulic Performance of Double Flow Solar Air Heater with Corrugated Absorber

Authors: S. P. Sharma, Som Nath Saha

Abstract:

This paper deals with the analytical investigation of thermal and thermohydraulic performance of double flow solar air heaters with corrugated and flat plate absorber. A mathematical model of double flow solar air heater has been presented, and a computer program in C++ language is developed to estimate the outlet temperature of air for the evaluation of thermal and thermohydraulic efficiency by solving the governing equations numerically using relevant correlations for heat transfer coefficients. The results obtained from the mathematical model is compared with the available experimental results and it is found to be reasonably good. The results show that the double flow solar air heaters have higher efficiency than conventional solar air heater, although the double flow corrugated absorber is superior to that of flat plate double flow solar air heater. It is also observed that the thermal efficiency increases with increase in mass flow rate; however, thermohydraulic efficiency increases with increase in mass flow rate up to a certain limit, attains the maximum value, then thereafter decreases sharply.

Keywords: Corrugated absorber, double flow, solar air heater, thermohydraulic efficiency.

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495 Behavior Factor of Flat Double-Layer Space Structures

Authors: Behnam Shirkhanghah, Vahid Shahbaznejhad-Fard, Houshyar Eimani-Kalesar, Babak Pahlevan

Abstract:

Flat double-layer grid is from category of space structures that are formed from two flat layers connected together with diagonal members. Increased stiffness and better seismic resistance in relation to other space structures are advantages of flat double layer space structures. The objective of this study is assessment and calculation of Behavior factor of flat double layer space structures. With regarding that these structures are used widely but Behavior factor used to design these structures against seismic force is not determined and exact, the necessity of study is obvious. This study is theoretical. In this study we used structures with span length of 16m and 20 m. All connections are pivotal. ANSYS software is used to non-linear analysis of structures.

Keywords: Behavior factor, Double-layer, Intensified resistance, Non-linear analysis

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494 Exergy Based Performance Analysis of Double Flow Solar Air Heater with Corrugated Absorber

Authors: S. P. Sharma, Som Nath Saha

Abstract:

This paper presents the performance, based on exergy analysis of double flow solar air heaters with corrugated and flat plate absorber. A mathematical model of double flow solar air heater based on energy balance equations has been presented and the results obtained have been compared with that of a conventional flat-plate solar air heater. The double flow corrugated absorber solar air heater performs thermally better than the flat plate double flow and conventional flat-plate solar air heater under same operating conditions. However, the corrugated absorber leads to higher pressure drop thereby increasing pumping power. The results revealed that the energy and exergy efficiencies of double flow corrugated absorber solar air heater is much higher than conventional solar air heater with the concept involving of increase in heat transfer surface area and turbulence in air flow. The results indicate that the energy efficiency increases, however, exergy efficiency decreases with increase in mass flow rate.

Keywords: Corrugated absorber, double flow, exergy efficiency, solar air heater.

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493 A high Speed 8 Transistor Full Adder Design Using Novel 3 Transistor XOR Gates

Authors: Shubhajit Roy Chowdhury, Aritra Banerjee, Aniruddha Roy, Hiranmay Saha

Abstract:

The paper proposes the novel design of a 3T XOR gate combining complementary CMOS with pass transistor logic. The design has been compared with earlier proposed 4T and 6T XOR gates and a significant improvement in silicon area and power-delay product has been obtained. An eight transistor full adder has been designed using the proposed three-transistor XOR gate and its performance has been investigated using 0.15um and 0.35um technologies. Compared to the earlier designed 10 transistor full adder, the proposed adder shows a significant improvement in silicon area and power delay product. The whole simulation has been carried out using HSPICE.

Keywords: XOR gate, full adder, improvement in speed, area minimization, transistor count minimization.

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492 Estimating the Population Mean by Using Stratified Double Extreme Ranked Set Sample

Authors: Mahmoud I. Syam, Kamarulzaman Ibrahim, Amer I. Al-Omari

Abstract:

Stratified double extreme ranked set sampling (SDERSS) method is introduced and considered for estimating the population mean. The SDERSS is compared with the simple random sampling (SRS), stratified ranked set sampling (SRSS) and stratified simple set sampling (SSRS). It is shown that the SDERSS estimator is an unbiased of the population mean and more efficient than the estimators using SRS, SRSS and SSRS when the underlying distribution of the variable of interest is symmetric or asymmetric.

Keywords: Double extreme ranked set sampling, Extreme ranked set sampling, Ranked set sampling, Stratified double extreme ranked set sampling.

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491 Novel Linear Autozeroing Floating-gate Amplifier for Ultra Low-voltage Applications

Authors: Yngvar Berg, Mehdi Azadmehr

Abstract:

In this paper we present a linear autozeroing ultra lowvoltage amplifier. The autozeroing performed by all ULV circuits is important to reduce the impact of noise and especially avoid power supply noise in mixed signal low-voltage CMOS circuits. The simulated data presented is relevant for a 90nm TSMC CMOS process.

Keywords: Low-voltage, trans conductance amplifier, linearity, floating-gate.

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490 Eigenvalues of Particle Bound in Single and Double Delta Function Potentials through Numerical Analysis

Authors: Edward Aris D. Fajardo, Hamdi Muhyuddin D. Barra

Abstract:

This study employs the use of the fourth order Numerov scheme to determine the eigenstates and eigenvalues of particles, electrons in particular, in single and double delta function potentials. For the single delta potential, it is found that the eigenstates could only be attained by using specific potential depths. The depth of the delta potential well has a value that varies depending on the delta strength. These depths are used for each well on the double delta function potential and the eigenvalues are determined. There are two bound states found in the computation, one with a symmetric eigenstate and another one which is antisymmetric.

Keywords: Double Delta Potential, Eigenstates, Eigenvalue, Numerov Method, Single Delta Potential

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489 Transient Currents in a Double Conductor Line above a Conducting Half-Space

Authors: Valentina Koliskina, Inta Volodko

Abstract:

Transient eddy current problem is solved in the present paper by the method of the Laplace transform for the case of a double conductor line located parallel to a conducting half-space. The Fourier sine and cosine integral transforms are used in order to find the Laplace transform of the solution. The inverse Laplace transform of the solution is found in closed form. The integrated electromotive force per unit length of the double conductor line is calculated in the form of an improper integral.

Keywords: Transient eddy currents, Laplace transform, double conductor line.

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488 Position Control of an AC Servo Motor Using VHDL and FPGA

Authors: Kariyappa B. S., Hariprasad S. A., R. Nagaraj

Abstract:

In this paper, a new method of controlling position of AC Servomotor using Field Programmable Gate Array (FPGA). FPGA controller is used to generate direction and the number of pulses required to rotate for a given angle. Pulses are sent as a square wave, the number of pulses determines the angle of rotation and frequency of square wave determines the speed of rotation. The proposed control scheme has been realized using XILINX FPGA SPARTAN XC3S400 and tested using MUMA012PIS model Alternating Current (AC) servomotor. Experimental results show that the position of the AC Servo motor can be controlled effectively. KeywordsAlternating Current (AC), Field Programmable Gate Array (FPGA), Liquid Crystal Display (LCD).

Keywords: Alternating Current (AC), Field Programmable Gate Array (FPGA), Liquid Crystal Display (LCD).

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487 On the Efficiency of a Double-Cone Gravitational Motor and Generator

Authors: Barenten Suciu, Akio Miyamura

Abstract:

In this paper, following the study-case of an inclined plane gravitational machine, efficiency of a double-cone gravitational motor and generator is evaluated. Two types of efficiency ratios, called translational efficiency and rotational efficiency, are defined relative to the intended duty of the gravitational machine, which can be either the production of translational kinetic energy, or rotational kinetic energy. One proved that, for pure rolling movement of the double- cone, in the absence of rolling friction, the total mechanical energy is conserved. In such circumstances, as the motion of the double-cone progresses along rails, the translational efficiency decreases and the rotational efficiency increases, in such way that sum of the rotational and translational efficiencies remains unchanged and equal to 1. Results obtained allow a comparison of the gravitational machine with other types of motor-generators, in terms of the achievable efficiency.

Keywords: Truncated double-cone, friction, rolling and sliding, efficiency, gravitational motor and generator.

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486 Parallel Double Splicing on Iso-Arrays

Authors: V. Masilamani, D.K. Sheena Christy, D.G. Thomas

Abstract:

Image synthesis is an important area in image processing. To synthesize images various systems are proposed in the literature. In this paper, we propose a bio-inspired system to synthesize image and to study the generating power of the system, we define the class of languages generated by our system. We call image as array in this paper. We use a primitive called iso-array to synthesize image/array. The operation is double splicing on iso-arrays. The double splicing operation is used in DNA computing and we use this to synthesize image. A comparison of the family of languages generated by the proposed self restricted double splicing systems on iso-arrays with the existing family of local iso-picture languages is made. Certain closure properties such as union, concatenation and rotation are studied for the family of languages generated by the proposed model.

Keywords: DNA computing, splicing system, iso-picture languages, iso-array double splicing system, iso-array self splicing.

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485 A Dynamically Reconfigurable Arithmetic Circuit for Complex Number and Double Precision Number

Authors: Haruo Shimada, Akinori Kanasugi

Abstract:

This paper proposes an architecture of dynamically reconfigurable arithmetic circuit. Dynamic reconfiguration is a technique to realize required functions by changing hardware construction during operations. The proposed circuit is based on a complex number multiply-accumulation circuit which is used frequently in the field of digital signal processing. In addition, the proposed circuit performs real number double precision arithmetic operations. The data formats are single and double precision floating point number based on IEEE754. The proposed circuit is designed using VHDL, and verified the correct operation by simulations and experiments.

Keywords: arithmetic circuit, complex number, double precision, dynamic reconfiguration

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484 A Floating Gate MOSFET Based Novel Programmable Current Reference

Authors: V. Suresh Babu, Haseena P. S., Varun P. Gopi, M. R. Baiju

Abstract:

In this paper a scheme is proposed for generating a programmable current reference which can be implemented in the CMOS technology. The current can be varied over a wide range by changing an external voltage applied to one of the control gates of FGMOS (Floating Gate MOSFET). For a range of supply voltages and temperature, CMOS current reference is found to be dependent, this dependence is compensated by subtracting two current outputs with the same dependencies on the supply voltage and temperature. The system performance is found to improve with the use of FGMOS. Mathematical analysis of the proposed circuit is done to establish supply voltage and temperature independence. Simulation and performance evaluation of the proposed current reference circuit is done using TANNER EDA Tools. The current reference shows the supply and temperature dependencies of 520 ppm/V and 312 ppm/oC, respectively. The proposed current reference can operate down to 0.9 V supply.

Keywords: Floating Gate MOSFET, current reference, self bias scheme, temperature independency, supply voltage independency.

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483 A New Class χ2 (M, A,) of the Double Difference Sequences of Fuzzy Numbers

Authors: N.Subramanian, U.K.Misra

Abstract:

The aim of this paper is to introduce and study a new concept of strong double χ2 (M,A, Δ) of fuzzy numbers and also some properties of the resulting sequence spaces of fuzzy numbers were examined.

Keywords: Modulus function, fuzzy number, metric space.

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482 Double Flux Orientation Control for a Doubly Fed Induction Machine

Authors: A. Ourici

Abstract:

Doubly fed induction machines DFIM are used mainly for wind energy conversion in MW power plants. This paper presents a new strategy of field oriented control ,it is based on the principle of a double flux orientation of stator and rotor at the same time. Therefore, the orthogonality created between the two oriented fluxes, which must be strictly observed, leads to generate a linear and decoupled control with an optimal torque. The obtained simulation results show the feasibility and the effectiveness of the suggested method.

Keywords: Doubly fed induction machine, double fluxorientation control , vector control , PWM inverter.

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481 Confidence Intervals for Double Exponential Distribution: A Simulation Approach

Authors: M. Alrasheedi

Abstract:

The double exponential model (DEM), or Laplace distribution, is used in various disciplines. However, there are issues related to the construction of confidence intervals (CI), when using the distribution.In this paper, the properties of DEM are considered with intention of constructing CI based on simulated data. The analysis of pivotal equations for the models here in comparisons with pivotal equations for normal distribution are performed, and the results obtained from simulation data are presented.

Keywords: Confidence intervals, double exponential model, pivotal equations, simulation

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480 The Analysis of Defects Prediction in Injection Molding

Authors: Mehdi Moayyedian, Kazem Abhary, Romeo Marian

Abstract:

This paper presents an evaluation of a plastic defect in injection molding before it occurs in the process; it is known as the short shot defect. The evaluation of different parameters which affect the possibility of short shot defect is the aim of this paper. The analysis of short shot possibility is conducted via SolidWorks Plastics and Taguchi method to determine the most significant parameters. Finite Element Method (FEM) is employed to analyze two circular flat polypropylene plates of 1 mm thickness. Filling time, part cooling time, pressure holding time, melt temperature and gate type are chosen as process and geometric parameters, respectively. A methodology is presented herein to predict the possibility of the short-shot occurrence. The analysis determined melt temperature is the most influential parameter affecting the possibility of short shot defect with a contribution of 74.25%, and filling time with a contribution of 22%, followed by gate type with a contribution of 3.69%. It was also determined the optimum level of each parameter leading to a reduction in the possibility of short shot are gate type at level 1, filling time at level 3 and melt temperature at level 3. Finally, the most significant parameters affecting the possibility of short shot were determined to be melt temperature, filling time, and gate type.

Keywords: Injection molding, plastic defects, short shot, Taguchi method.

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479 Program Memories Error Detection and Correction On-Board Earth Observation Satellites

Authors: Y. Bentoutou

Abstract:

Memory Errors Detection and Correction aim to secure the transaction of data between the central processing unit of a satellite onboard computer and its local memory. In this paper, the application of a double-bit error detection and correction method is described and implemented in Field Programmable Gate Array (FPGA) technology. The performance of the proposed EDAC method is measured and compared with two different EDAC devices, using the same FPGA technology. Statistical analysis of single-event upset (SEU) and multiple-bit upset (MBU) activity in commercial memories onboard the first Algerian microsatellite Alsat-1 is given.

Keywords: Error Detection and Correction, On-board computer, small satellite missions.

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478 Stage-Gate Framework Application for Innovation Assessment among Small and Medium-Sized Enterprises

Authors: Indre Brazauskaite, Vilte Auruskeviciene

Abstract:

The paper explores the Stage-Gate framework application for innovation maturity among small and medium-sized enterprises (SMEs). Innovation management becomes an essential business survival process for all sizes of organizations that can be evaluated and audited systemically. This research systemically defines and assesses the innovation process from the perspective of the company’s top management. Empirical research explores attitudes and existing practices of innovation management in SMEs in Baltic countries. It structurally investigates the current innovation management practices, level of standardization, and potential challenges in the area. Findings allow to structure of existing practices based on an institutionalized model and contribute to a more advanced understanding of the innovation process among SMEs. Practically, findings contribute to advanced decision-making and business planning in the process.

Keywords: innovation measure, innovation process, small and medium-sized enterprises, SMEs, stage-gate framework.

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477 Fast High Voltage Solid State Switch Using Insulated Gate Bipolar Transistor for Discharge-Pumped Lasers

Authors: Nur Syarafina Binti Othman, Tsubasa Jindo, Makato Yamada, Miho Tsuyama, Hitoshi Nakano

Abstract:

A novel method to produce a fast high voltage solid states switch using Insulated Gate Bipolar Transistors (IGBTs) is presented for discharge-pumped gas lasers. The IGBTs are connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. The fast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast high-voltage pulse. The switching characteristic of fast-high voltage solid state switch has been estimated in the multi-stage series-connected IGBT with the applied voltage of several tens of kV. Electrical circuit diagram and the mythology of fast-high voltage solid state switch as well as experimental results obtained are presented.

Keywords: High voltage, IGBT, Solid states switch.

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476 2D Structured Non-Cyclic Fuzzy Graphs

Authors: T. Pathinathan, M. Peter

Abstract:

Fuzzy graphs incorporate concepts from graph theory with fuzzy principles. In this paper, we make a study on the properties of fuzzy graphs which are non-cyclic and are of two-dimensional in structure. In particular, this paper presents 2D structure or the structure of double layer for a non-cyclic fuzzy graph whose underlying crisp graph is non-cyclic. In any graph structure, introducing 2D structure may lead to an inherent cycle. We propose relevant conditions for 2D structured non-cyclic fuzzy graphs. These conditions are extended even to fuzzy graphs of the 3D structure. General theoretical properties that are studied for any fuzzy graph are verified to 2D structured or double layered fuzzy graphs. Concepts like Order, Degree, Strong and Size for a fuzzy graph are studied for 2D structured or double layered non-cyclic fuzzy graphs. Using different types of fuzzy graphs, the proposed concepts relating to 2D structured fuzzy graphs are verified.

Keywords: Double layered fuzzy graph, double layered non-cyclic fuzzy graph, strong, order, degree and size.

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475 Dominant Correlation Effects in Atomic Spectra

Authors: Hubert Klar

Abstract:

High double excitation of two-electron atoms has been investigated using hyperpherical coordinates within a modified adiabatic expansion technique. This modification creates a novel fictitious force leading to a spontaneous exchange symmetry breaking at high double excitation. The Pauli principle must therefore be regarded as approximation valid only at low excitation energy. Threshold electron scattering from high Rydberg states shows an unexpected time reversal symmetry breaking. At threshold for double escape we discover a broad (few eV) Cooper pair.

Keywords: Correlation, resonances, threshold ionization, Cooper pair.

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