Search results for: Triple material gate (TMG)

Authors: V. Tawiwat, S. Sarawut

Abstract:

Applied a mouse-s roller with a gripper to increase the efficiency for a gripper can learn to a material handling without slipping. To apply a gripper, we use the optimize principle to develop material handling by use a signal for checking a roller mouse that rotate or not. In case of the roller rotates means that the material slips. A gripper will slide to material handling until the roller will not rotate. As this experiment has test material handling for comparing a grip force that uses to material handling of the 10-human with the applied gripper. We can summarize that human exert the material handling more than the applied gripper. Because of the gripper can exert more befit to material handling than human and may be a minimum force to lift a material without slipping.

Keywords: Optimize, Gripper, Mouse's Roller, Minimum Force.

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Authors: Sahil, Rajeev Saha, Sanjeev Kumar

Abstract:

Material selection is one of the key issues for the production of reliable and quality products in industries. A number of materials are available for a single product due to which material selection become a difficult task. The aim of this paper is to select appropriate material for gear used in fuel pump by using Graph Theory and Matrix Approach (GTMA). GTMA is a logical and systematic approach that can be used to model and analyze various engineering systems. In present work, four alternative material and their seven attributes are used to identify the best material for given product.

Keywords: Material, GTMA, MADM, digraph, decision making.

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Authors: C. Worakitjaroenphon, A. Oonsivilai

Abstract:

The study of piezoelectric material in the past was in T-Domain form; however, no one has studied piezoelectric material in the S-Domain form. This paper will present the piezoelectric material in the transfer function or S-Domain model. S-Domain is a well known mathematical model, used for analyzing the stability of the material and determining the stability limits. By using S-Domain in testing stability of piezoelectric material, it will provide a new tool for the scientific world to study this material in various forms.

Keywords: Piezoelectric, Stability, S-Domain, Transfer function

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Authors: Xiang Li, Zhixian Chen, Zheng Fang, Aashit Kamath, Xinpeng Wang, Navab Singh, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We integrate TiN/Ni/HfO2/Si RRAM cell with a vertical gate-all-around (GAA) nanowire transistor to achieve compact 4F2 footprint in a 1T1R configuration. The tip of the Si nanowire (source of the transistor) serves as bottom electrode of the memory cell. Fabricated devices with nanowire diameter ~ 50nm demonstrate ultra-low current/power switching; unipolar switching with 10μA/30μW SET and 20μA/30μW RESET and bipolar switching with 20nA/85nW SET and 0.2nA/0.7nW RESET. Further, the switching current is found to scale with nanowire diameter making the architecture promising for future scaling.

Keywords: RRAM, 1T1R, gate-all-around FET, nanowire FET, vertical MOSFETs

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Authors: Ali Shirazi, Robert A. Taylor, Stephen D. White, Graham L. Morrison

Abstract:

In this paper, a detailed simulation model of a solar-powered triple-effect LiBr–H₂O absorption chiller is developed to supply both cooling and heating demand of a large-scale building, aiming to reduce the fossil fuel consumption and greenhouse gas emissions in building sector. TRNSYS 17 is used to simulate the performance of the system over a typical year. A combined energetic-economic-environmental analysis is conducted to determine the system annual primary energy consumption and the total cost, which are considered as two conflicting objectives. A multi-objective optimization of the system is performed using a genetic algorithm to minimize these objectives simultaneously. The optimization results show that the final optimal design of the proposed plant has a solar fraction of 72% and leads to an annual primary energy saving of 0.69 GWh and annual CO₂ emissions reduction of ~166 tonnes, as compared to a conventional HVAC system. The economics of this design, however, is not appealing without public funding, which is often the case for many renewable energy systems. The results show that a good funding policy is required in order for these technologies to achieve satisfactory payback periods within the lifetime of the plant.

Keywords: Economic, environmental, multi-objective optimization, solar air-conditioning, triple-effect absorption chiller.

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Authors: Jae-Chang Kwak, Yong-Seo Koo

Abstract:

The high efficiency power management IC (PMIC) with switching device is presented in this paper. PMIC is controlled with PFM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS (DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increase, resulting in a much higher current handling capability than standard MOSFET. PFM control circuits consist of a generator, AND gate and comparator. The generator is made to have 1.2MHz oscillation voltage. The DC-DC converter based on PFM control circuit and low on-resistance switching device is presented in this paper.

Keywords: DT-CMOS, PMIC, PFM, DC-DC converter.

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Authors: G. Renuka Devi

Abstract:

This paper analyzes the experimental investigation of indirect field oriented control of Field Programmable Gate Array (FPGA) based five-phase induction motor drive. A detailed d-q modeling and Space Vector Pulse Width Modulation (SVPWM) technique of 5-phase drive is elaborated in this paper. In the proposed work, the prototype model of 1 hp 5-phase Voltage Source Inverter (VSI) fed drive is implemented in hardware. SVPWM pulses are generated in FPGA platform through Very High Speed Integrated Circuit Hardware Description Language (VHDL) coding. The experimental results are observed under different loading conditions and compared with simulation results to validate the simulation model.

Keywords: Five-phase induction motor drive, field programmable gate array, indirect field oriented control, multi-phase, space vector pulse width modulation, voltage source inverter, very high speed integrated circuit hardware description language.

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Authors: Shobha Sharma, Amita Dev

Abstract:

This research paper presents highly optimized barrel shifter at 22nm Hi K metal gate strained Si technology node. This barrel shifter is having a unique combination of static and dynamic body bias which gives lowest power delay product. This power delay product is compared with the same circuit at same technology node with static forward biasing at ‘supply/2’ and also with normal reverse substrate biasing and still found to be the lowest. The power delay product of this barrel sifter is .39362X10-17J and is lowered by approximately 78% to reference proposed barrel shifter at 32nm bulk CMOS technology. Power delay product of barrel shifter at 22nm Hi K Metal gate technology with normal reverse substrate bias is 2.97186933X10-17J and can be compared with this design’s PDP of .39362X10-17J. This design uses both static and dynamic substrate biasing and also has approximately 96% lower power delay product compared to only forward body biased at half of supply voltage. The NMOS model used are predictive technology models of Arizona state university and the simulations to be carried out using HSPICE simulator.

Keywords: Dynamic body biasing, highly optimized barrel shifter, PDP, Static body biasing.

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Authors: Farid Moshgelani, Dhamin Al-Khalili, Côme Rozon

Abstract:

In this paper, FinFET devices are analyzed with emphasis on sub-threshold leakage current control. This is achieved through proper biasing of the back gate, and through the use of asymmetric work functions for the four terminal FinFET devices. We are also examining different configurations of multiplexers and XOR gates using transistors of symmetric and asymmetric work functions. Based on extensive characterization data for MUX circuits, our proposed configuration using symmetric devices lead to leakage current and delay improvements of 65% and 47% respectively compared to results in the literature. For XOR gates, a 90% improvement in the average leakage current is achieved by using asymmetric devices. All simulations are based on a 25nm FinFET technology using the University of Florida UFDG model.

Keywords: FinFET, logic functions, asymmetric workfunction devices, back gate biasing, sub-threshold leakage current.

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Authors: C. Kumjeera, T. Unchim, B. Marungsri, A. Oonsivilai

Abstract:

The study of piezoelectric material in the past was in T-Domain form; however, no one has studied piezoelectric material in the S-Domain form. This paper will present the piezoelectric material in the transfer function or S-Domain model. S-Domain is a well known mathematical model, used for analyzing the stability of the material and determining the stability limits. By using S-Domain in testing stability of piezoelectric material, it will provide a new tool for the scientific world to study this material in various forms.

Keywords: Hard disk drive, failure analysis, tool, time

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Authors: M. M. Karkhanehchi, A. Ammani

Abstract:

A simple analytical model has been developed to optimize biasing conditions for obtaining maximum linearity among lattice-matched, pseudomorphic and metamorphic HEMT types as well as enhancement and depletion HEMT modes. A nonlinear current-voltage model has been simulated based on extracted data to study and select the most appropriate type and mode of HEMT in terms of a given gate-source biasing voltage within the device so as to employ the circuit for the highest possible output current or voltage linear swing. Simulation results can be used as a basis for the selection of optimum gate-source biasing voltage for a given type and mode of HEMT with regard to a circuit design. The consequences can also be a criterion for choosing the optimum type or mode of HEMT for a predetermined biasing condition.

Keywords: Biasing, characteristic, linearity, simulation.

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Authors: Spyridon Nikolaidis

Abstract:

A modeling approach for CMOS gates is presented based on the use of the equivalent inverter. A new model for the inverter has been developed using a simplified transistor current model which incorporates the nanoscale effects for the planar technology. Parametric expressions for the output voltage are provided as well as the values of the output and supply current to be compatible with the CCS technology. The model is parametric according the input signal slew, output load, transistor widths, supply voltage, temperature and process. The transistor widths of the equivalent inverter are determined by HSPICE simulations and parametric expressions are developed for that using a fitting procedure. Results for the NAND gate shows that the proposed approach offers sufficient accuracy with an average error in propagation delay about 5%.

Keywords: CMOS gate modeling, Inverter modeling, transistor current model, timing model.

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Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Jian-Ping Zeng, Tai-Hong Wang

Abstract:

Photo-BJMOSFET (Bipolar Junction Metal-Oxide- Semiconductor Field Effect Transistor) fabricated on SOI film was proposed. ITO film is adopted in the device as gate electrode to reduce light absorption. Depletion region but not inversion region is formed in film by applying gate voltage (but low reverse voltage) to achieve high photo-to-dark-current ratio. Comparisons of photoelectriccharacteristics executed among VGK=0V, 0.3V, 0.6V, 0.9V and 1.0V (reverse voltage VAK is equal to 1.0V for total area of 10×10μm2). The results indicate that the greatest improvement in photo-to-dark-current ratio is achieved up to 2.38 at VGK=0.6V. In addition, photo-BJMOSFET is compatible with CMOS integration due to big input resistance

Keywords: Photo-BJMOSFET, Responsivity, Sensitivity, Spectral response.

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Authors: N. Massoum, A. Guen. Bouazza, B. Bouazza, A. El Ouchdi

Abstract:

The progress of industry integrated circuits in recent years has been pushed by continuous miniaturization of transistors. With the reduction of dimensions of components at 0.1 micron and below, new physical effects come into play as the standard simulators of two dimensions (2D) do not consider. In fact the third dimension comes into play because the transverse and longitudinal dimensions of the components are of the same order of magnitude. To describe the operation of such components with greater fidelity, we must refine simulation tools and adapted to take into account these phenomena. After an analytical study of the static characteristics of the component, according to the different operating modes, a numerical simulation is performed of field-effect transistor with submicron gate MESFET GaInP. The influence of the dimensions of the gate length is studied. The results are used to determine the optimal geometric and physical parameters of the component for their specific applications and uses.

Keywords: Monte Carlo simulation, transient electron transport, MESFET device.

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Authors: Cheng-Hsien Chang, Jyi-Tsong Lin, Po-Hsieh Lin, Hung-Pei Hsu, Chan-Hsiang Chang, Ming-Tsung Shih, Shih-Chuan Tseng, Min-Yan Lin

Abstract:

In this paper, we have proposed a novel FinFET with extended body under the poly gate, which is called EB-FinFET, and its characteristic is demonstrated by using three-dimensional (3-D) numerical simulation. We have analyzed and compared it with conventional FinFET. The extended body height dependence on the drain induced barrier lowering (DIBL) and subthreshold swing (S.S) have been also investigated. According to the 3-D numerical simulation, the proposed structure has a firm structure, an acceptable short channel effect (SCE), a reduced series resistance, an increased on state drain current (I on) and a large normalized I DS. Furthermore, the structure can also improve corner effect and reduce self-heating effect due to the extended body. Our results show that the EBFinFET is excellent for nanoscale device.

Keywords: SOI, FinFET, tri-gate, self-heating effect.

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Authors: K. E. Kaharudin, A. H. Hamidon, F. Salehuddin

Abstract:

Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In order to ensure that the transistor possess a superb turn-off characteristic, the subs-threshold swing (SS) must be kept at minimum value (60-90mV/dec). By utilizing SILVACO TCAD software, an n-channel vertical DG-MOSFET was successfully designed while keeping the sub-threshold swing (SS) value as minimum as possible. From the observation made, the value of sub-threshold swing (SS) was able to be varied by adjusting the height of the silicon pillar. The minimum value of sub-threshold swing (SS) was found to be 64.7mV/dec with threshold voltage (V_TH) of 0.895V. The ideal height of the vertical DG-MOSFET pillar was found to be at 0.265 µm.

Keywords: DG-MOSFET, pillar, SCE, vertical

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Authors: Peña Aguilar Juan M., Valencia Luis, Pastrana Alberto, Nava Estefany, Martinez A., Vivanco M., Castañeda A.

Abstract:

This paper seeks to compare the innovation of Mexico from an economic and human perspective, with the seven most innovative countries according to the Global Innovation Index 2013, done by the World Intellectual Property Organization (WIPO). The above analysis suggests nine dimensions: Expenditure on R & D, intellectual property, appropriate environment to conduct business, economic stability, triple helix for R & D, ICT Infrastructure, education, human resources and quality of life. Each dimension is represented by an indicator which is later used to construct a radial graph that compares the innovative capacity of the countries analyzed. As a result, it is proposed a new indicator of innovation called The Area of Innovation. Observations are made from the results, and finally as a conclusion, those items or dimensions in which Mexico suffers lag in innovation are identify.

Keywords: Dimension, measure, innovation level, economy, radar chart.

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Authors: Hung-Pei Hsu, Jyi-Tsong Lin, Po-Hsieh Lin, Cheng-Hsien Chang, Ming-Tsung Shih, Chan-Hsiang Chang, Shih-Chuan Tseng, Min-Yan Lin, Shih-Wen Hsu

Abstract:

In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Keywords: Average gate length (Lavg), drain-induced barrier lowering (DIBL), L-shaped channel MOSFET (LMOS), subthreshold swing (S.S.).

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Authors: Wei Zhang

Abstract:

With the rapid development of deep learning, neural network and deep learning algorithms play a significant role in various practical applications. Due to the high accuracy and good performance, Convolutional Neural Networks (CNNs) especially have become a research hot spot in the past few years. However, the size of the networks becomes increasingly large scale due to the demands of the practical applications, which poses a significant challenge to construct a high-performance implementation of deep learning neural networks. Meanwhile, many of these application scenarios also have strict requirements on the performance and low-power consumption of hardware devices. Therefore, it is particularly critical to choose a moderate computing platform for hardware acceleration of CNNs. This article aimed to survey the recent advance in Field Programmable Gate Array (FPGA)-based acceleration of CNNs. Various designs and implementations of the accelerator based on FPGA under different devices and network models are overviewed, and the versions of Graphic Processing Units (GPUs), Application Specific Integrated Circuits (ASICs) and Digital Signal Processors (DSPs) are compared to present our own critical analysis and comments. Finally, we give a discussion on different perspectives of these acceleration and optimization methods on FPGA platforms to further explore the opportunities and challenges for future research. More helpfully, we give a prospect for future development of the FPGA-based accelerator.

Keywords: Deep learning, field programmable gate array, FPGA, hardware acceleration, convolutional neural networks, CNN.

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Authors: Sachin Kamble, Shradha Gawankar

Abstract:

This paper presents the findings of successful implementation of Business Process Reengineering (BPR) of cement dispatch activities in a cement manufacturing plant located in India. Simulation model was developed for the purpose of identifying and analyzing the areas for improvement. The company was facing a problem of low throughput rate and subsequent forced stoppages of the plant leading to a high production loss of 15000MT per month. It was found from the study that the present systems and procedures related to the in-plant logistics plant required significant changes. The major recommendations included process improvement at the entry gate, reducing the cycle time at the security gate and installation of an additional weigh bridge. This paper demonstrates how BPR can be implemented for improving the in-plant logistics process. Various recommendations helped the plant to increase its throughput by 14%.

Keywords: Business process reengineering, simulation modeling, in-plant logistics, distribution process, cement industry.

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Authors: Mohammed A. Almomani, Dina W. Al-Qudah

Abstract:

Product performance depends on the type and quality of its building material. Successful product must be made using high quality material, and using the right methods. Many foot problems took place as a result of using poor insole material. Therefore, selecting a proper insole material is crucial to eliminate these problems. In this study, the analytical hierarchy process (AHP) is used to provide a systematic procedure for choosing the best material adequate for this application among three material alternatives (polyurethane, poron, and plastzote). Several comparison criteria are used to build the AHP model including: density, stiffness, durability, energy absorption, and ease of fabrication. Poron was selected as the best choice. Inconsistency testing indicates that the model is reasonable, and the materials alternative ranking is effective.

Keywords: Materials selection, biomedical insole, footwear insole, AHP.

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Authors: C. Kalamani, V. Abishek Karthick, S. Anitha, K. Kavin Kumar

Abstract:

The fault tolerant system plays a crucial role in the critical applications which are being used in the present scenario. A fault may change the functionality of circuits. Aim of this paper is to design multiplier using fault tolerant hybrid full adder. Fault tolerant hybrid full adder is designed to check and repair any fault in the circuit using self-checking circuit and the self-repairing circuit. Further, the use of conventional logic circuits may result in more area, delay as well as power consumption. In order to reduce these parameters of the circuit, GDI (Gate Diffusion Input) techniques with less number of transistors are used compared to conventional full adder circuit. This reduces the area, delay and power consumption. The proposed method solves the major problems occurring in the most crucial and critical applications.

Keywords: Gate diffusion input, hybrid full adder, self-checking, fault tolerant.

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Authors: David M. Lucas, Charles W. Jarrett

Abstract:

In the culture of Thailand, the Yak serve as a mediated icon representing strength, power, and mystical protection not only for the Buddha, but for population of worshipers. Originating from the forests of China, the Yak continues to stand guard at the gates of Buddhist temples. The Yak represents Thai culture in the hearts of Thai people. This paper presents a qualitative study regarding the curious mix of media, culture, and religion that projects the Yak of Thailand as a larger than life message throughout the political, cultural, and religious spheres. The gate guardians, or gods as they are sometimes called, appear throughout the religious temples of Asian cultures. However, the Asian cultures demonstrate differences in artistic renditions (or presentations) of such sentinels. Thailand gate guards (the Yak) stand in front of many Buddhist temples, and these iconic figures display unique features with varied symbolic significance. The temple (or wat), plays a vital role in every community; and, for many people, Thailand’s temples are the country’s most endearing sights. The authors applied folknography as a methodology to illustrate the importance of the Thai Yak in serving as meaningful icons that transcend not only time, but the culture, religion, and mass media. The Yak represents mythical, religious, artistic, cultural, and militaristic significance for the Thai people. Data collection included interviews, focus groups, and natural observations. This paper summarizes the perceptions of the Thai people concerning their gate sentries and the relationship, communication, connection, and the enduring respect that Thai people hold for their guardians of the gates.

Keywords: Communication, Culture, Folknography, Icon, Image, Media, Protection, Religion, Yak.

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Authors: Saleem Z. Ramadan

Abstract:

The material selection problem is concerned with the determination of the right material for a certain product to optimize certain performance indices in that product such as mass, energy density, and power-to-weight ratio. This paper is concerned about optimizing the selection of the manufacturing process along with the material used in the product under performance indices and availability constraints. In this paper, the material selection problem is formulated using binary programming and solved by genetic algorithm. The objective function of the model is to minimize the total manufacturing cost under performance indices and material and manufacturing process availability constraints.

Keywords: Optimization, Material selection, Process selection, Genetic algorithm.

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Authors: Padmanabhan Balasubramanian, Ryuta Arisaka

Abstract:

Factoring Boolean functions is one of the basic operations in algorithmic logic synthesis. A novel algebraic factorization heuristic for single-output combinatorial logic functions is presented in this paper and is developed based on the set theory paradigm. The impact of factoring is analyzed mainly from a low power design perspective for standard cell based digital designs in this paper. The physical implementation of a number of MCNC/IWLS combinational benchmark functions and sub-functions are compared before and after factoring, based on a simple technology mapping procedure utilizing only standard gate primitives (readily available as standard cells in a technology library) and not cells corresponding to optimized complex logic. The power results were obtained at the gate-level by means of an industry-standard power analysis tool from Synopsys, targeting a 130nm (0.13μm) UMC CMOS library, for the typical case. The wire-loads were inserted automatically and the simulations were performed with maximum input activity. The gate-level simulations demonstrate the advantage of the proposed factoring technique in comparison with other existing methods from a low power perspective, for arbitrary examples. Though the benchmarks experimentation reports mixed results, the mean savings in total power and dynamic power for the factored solution over a non-factored solution were 6.11% and 5.85% respectively. In terms of leakage power, the average savings for the factored forms was significant to the tune of 23.48%. The factored solution is expected to better its non-factored counterpart in terms of the power-delay product as it is well-known that factoring, in general, yields a delay-efficient multi-level solution.

Keywords: Factorization, Set theory, Logic function, Standardcell based design, Low power.

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Authors: Muhammad H. Rais,

Abstract:

Truncated multiplier is a good candidate for digital signal processing (DSP) applications including finite impulse response (FIR) and discrete cosine transform (DCT). Through truncated multiplier a significant reduction in Field Programmable Gate Array (FPGA) resources can be achieved. This paper presents for the first time a comparison of resource utilization of Spartan-3AN and Virtex-5 implementation of standard and truncated multipliers using Very High Speed Integrated Circuit Hardware Description Language (VHDL). The Virtex-5 FPGA shows significant improvement as compared to Spartan-3AN FPGA device. The Virtex-5 FPGA device shows better performance with a percentage ratio of number of occupied slices for standard to truncated multipliers is increased from 40% to 73.86% as compared to Spartan- 3AN is decreased from 68.75% to 58.78%. Results show that the anomaly in Spartan-3AN FPGA device average connection and maximum pin delay have been efficiently reduced in Virtex-5 FPGA device.

Keywords: Digital Signal Processing (DSP), FieldProgrammable Gate Array (FPGA), Spartan-3AN, TruncatedMultiplier, Virtex-5, VHDL.

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Authors: Kittipong Tripetch, Nobuhiko Nakano

Abstract:

Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at  ±0.9 V.

Keywords: Complementary common gate, complementary regulated cascode, current mirror, floating active resistors.

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Authors: Abdullah Yassin, Takashi Ueda, Syed Tarmizi Syed Shazali

Abstract:

This paper presents an experimental investigation on the machinability of laser-sintered material using small ball end mill focusing on wear mechanisms. Laser-sintered material was produced by irradiating a laser beam on a layer of loose fine SCM-Ni-Cu powder. Bulk carbon steel JIS S55C was selected as a reference steel. The effects of powder consolidation mechanisms and unsintered powder on the tool life and wear mechanisms were carried out. Results indicated that tool life in cutting laser-sintered material is lower than that in cutting JIS S55C. Adhesion of the work material and chipping were the main wear mechanisms of the ball end mill in cutting laser-sintered material. Cutting with the unsintered powder surrounding the tool and laser-sintered material had caused major fracture on the cutting edge.

Keywords: Laser-sintered material, tool life, wear mechanism.

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Authors: Rajesh Mehra, Bharti Thakur

Abstract:

In this paper, an Infinite Impulse Response (IIR) filter has been designed and simulated on an Field Programmable Gate Arrays (FPGA). The implementation is based on Multiply Add and Accumulate (MAC) algorithm which uses multiply operations for design implementation. Parallel Pipelined structure is used to implement the proposed IIR Filter taking optimal advantage of the look up table of target device. The designed filter has been synthesized on Digital Signal Processor (DSP) slice based FPGA to perform multiplier function of MAC unit. The DSP slices are useful to enhance the speed performance. The proposed design is simulated with Matlab, synthesized with Xilinx Synthesis Tool, and implemented on FPGA devices. The Virtex 5 FPGA based design can operate at an estimated frequency of 81.5 MHz as compared to 40.5 MHz in case of Spartan 3 ADSP based design. The Virtex 5 based implementation also consumes less slices and slice flip flops of target FPGA in comparison to Spartan 3 ADSP based implementation to provide cost effective solution for signal processing applications.

Keywords: Butterworth, DSP, IIR, MAC, FPGA.

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Authors: E. Çetin, A. Kurşun, Ş. Aksoy, M. Tunay Çetin

Abstract:

The closed form study deals with elastic stress analysis of annular bi-material discs with variable thickness subjected to the mechanical and thermomechanical loads. Those discs have many applications in the aerospace industry, such as gas turbines and gears. Those discs normally work under thermal and mechanical loads. Their life cycle can increase when stress components are minimized. Each material property is assumed to be isotropic. The results show that material combinations and thickness of profiles play an important role in determining the responses of bi-material discs and an optimal design of those structures. Stress distribution is investigated and results are shown as graphs.

Keywords: Bi-material discs, elastic stress analysis, mechanical loads, rotating discs.

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