Search results for: High Frequency MOSFET

Authors: Yashvir Singh, Mayank Joshi

Abstract:

A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.

Keywords: 4H-SiC, lateral, trench-gate, power MOSFET.

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Authors: Nabil A. Ahmed

Abstract:

This paper presents a novel three-phase utility frequency to high frequency soft switching power conversion circuit with dual mode pulse width modulation and pulse density modulation for high power induction heating applications as melting of steel and non ferrous metals, annealing of metals, surface hardening of steel and cast iron work pieces and hot water producers, steamers and super heated steamers. This high frequency power conversion circuit can operate from three-phase systems to produce high current for high power induction heating applications under the principles of ZVS and it can regulate its ac output power from the rated value to a low power level. A dual mode modulation control scheme based on high frequency PWM in synchronization with the utility frequency positive and negative half cycles for the proposed high frequency conversion circuit and utility frequency pulse density modulation is produced to extend its soft switching operating range for wide ac output power regulation. A dual packs heat exchanger assembly is designed to be used in consumer and industrial fluid pipeline systems and it is proved to be suitable for the hot water, steam and super heated steam producers. Experiment and simulation results are given in this paper to verify the operation principles of the proposed ac conversion circuit and to evaluate its power regulation and conversion efficiency. Also, the paper presents a mutual coupling model of the induction heating load instead of equivalent transformer circuit model.

Keywords: Induction heating, three-phase, conversion circuit, pulse width modulation, pulse density modulation, high frequency, soft switching.

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Authors: Ambuj Kumar, Sunil Kumar Singh, Shrikant Singh

Abstract:

Sweep frequency response analysis has been turning out a powerful tool for investigation of mechanical as well as electrical integration of transformers. In this paper various aspect of practical application of SFRA has been studied. Open circuit and short circuit measurement were done on different phases of high voltage and low voltage winding. A case study was presented for the transformer of rating 31.5 MVA for various frequency ranges. A clear picture was presented for sub- frequency ranges for HV as well as LV winding. The main motive of work is to investigate high voltage short circuit response. The theoretical concept about SFRA responses is validated with expert system software results.

Keywords: Frequency deviation, OCT & SCT, SFRA, Transformer winding.

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Authors: L. Ashok Kumar, N. Sujith Kumar

Abstract:

Most of the PV systems are designed with transformer for safety purpose with galvanic isolation. However, the transformer is big, heavy and expensive. Also, it reduces the overall frequency of the conversion stage. Generally PV inverter with transformer is having efficiency around 92%–94% only. To overcome these problems, transformerless PV system is introduced. It is smaller, lighter, cheaper and higher in efficiency. However, dangerous leakage current will flow between PV array and the grid due to the stray capacitance. There are different types of configurations available for transformerless inverters like H5, H6, HERIC, oH5, and Dual paralleled buck inverter. But each configuration is suffering from its own disadvantages like high conduction losses, shoot-through issues of switches, dead-time requirements at zero crossing instants of grid voltage to avoid grid shoot-through faults and MOSFET reverse recovery issues. The main objective of the proposed transformerless inverter is to address two key issues: One key issue for a transformerless inverter is that it is necessary to achieve high efficiency compared to other existing inverter topologies. Another key issue is that the inverter configuration should not have any shoot-through issues for higher reliability.

Keywords: Leakage current, common mode (CM), photovoltaic (PV) systems, pulse width modulation (PWM).

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Authors: Jayme G. A. Barbedo, Amauri Lopes

Abstract:

This paper presents an algorithm to estimate the parameters of two closely spaced sinusoids, providing a frequency resolution that is more than 800 times greater than that obtained by using the Discrete Fourier Transform (DFT). The strategy uses a highly optimized grid search approach to accurately estimate frequency, amplitude and phase of both sinusoids, keeping at the same time the computational effort at reasonable levels. The proposed method has three main characteristics: 1) a high frequency resolution; 2) frequency, amplitude and phase are all estimated at once using one single package; 3) it does not rely on any statistical assumption or constraint. Potential applications to this strategy include the difficult task of resolving coincident partials of instruments in musical signals.

Keywords: Closely spaced sinusoids, high-resolution parameter estimation, optimized grid search.

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Authors: Rahil Samani, Saeed Soleimani, Ehsan Adib, Majid Pahlevani

Abstract:

This paper presents an inverting high step-up DC/DC converter. Basically, this high step-up DC/DC converter is an appealing interface for solar applications. The proposed topology takes advantage of using coupled inductors. Due to the leakage inductances of these coupled inductors, the power MOSFET has the zero current switching (ZCS) condition, which results in decreased switching losses. This will substantially improve the overall efficiency of the power converter. Furthermore, employing coupled inductors has led to a higher voltage gain. Theoretical analysis and experimental results of a 100W 20V/220V prototype are presented to verify the superior performance of the proposed DC/DC converter.

Keywords: Coupled inductors, high step-up DC/DC converter, zero-current switching, cuk converter, sepic converter.

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Authors: Desmond B. Keenan, Paul Grossman

Abstract:

In order to provide accurate heart rate variability indices of sympathetic and parasympathetic activity, the low frequency and high frequency components of an RR heart rate signal must be adequately separated. This is not always possible by just applying spectral analysis, as power from the high and low frequency components often leak into their adjacent bands. Furthermore, without the respiratory spectra it is not obvious that the low frequency component is not another respiratory component, which can appear in the lower band. This paper describes an adaptive filter, which aids the separation of the low frequency sympathetic and high frequency parasympathetic components from an ECG R-R interval signal, enabling the attainment of more accurate heart rate variability measures. The algorithm is applied to simulated signals and heart rate and respiratory signals acquired from an ambulatory monitor incorporating single lead ECG and inductive plethysmography sensors embedded in a garment. The results show an improvement over standard heart rate variability spectral measurements.

Keywords: Heart rate variability, vagal tone, sympathetic, parasympathetic, spectral analysis, adaptive filter.

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Authors: Manjit Singh

Abstract:

Multiscale entropy (MSE) is an extensively used index to provide a general understanding of multiple complexity of physiologic mechanism of heart rate variability (HRV) that operates on a wide range of time scales. Accurate selection of electrocardiogram (ECG) sampling frequency is an essential concern for clinically significant HRV quantification; high ECG sampling rate increase memory requirements and processing time, whereas low sampling rate degrade signal quality and results in clinically misinterpreted HRV. In this work, the impact of ECG sampling frequency on MSE based HRV have been quantified. MSE measures are found to be sensitive to ECG sampling frequency and effect of sampling frequency will be a function of time scale.

Keywords: ECG, heart rate variability, HRV, multiscale entropy, sampling frequency.

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Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

Aggressive scaling of MOS devices requires use of ultra-thin gate oxides to maintain a reasonable short channel effect and to take the advantage of higher density, high speed, lower cost etc. Such thin oxides give rise to high electric fields, resulting in considerable gate tunneling current through gate oxide in nano regime. Consequently, accurate analysis of gate tunneling current is very important especially in context of low power application. In this paper, a simple and efficient analytical model has been developed for channel and source/drain overlap region gate tunneling current through ultra thin gate oxide n-channel MOSFET with inevitable deep submicron effect (DSME).The results obtained have been verified with simulated and reported experimental results for the purpose of validation. It is shown that the calculated tunnel current is well fitted to the measured one over the entire oxide thickness range. The proposed model is suitable enough to be used in circuit simulator due to its simplicity. It is observed that neglecting deep sub-micron effect may lead to large error in the calculated gate tunneling current. It is found that temperature has almost negligible effect on gate tunneling current. It is also reported that gate tunneling current reduces with the increase of gate oxide thickness. The impact of source/drain overlap length is also assessed on gate tunneling current.

Keywords: Gate tunneling current, analytical model, gate dielectrics, non uniform poly gate doping, MOSFET, fringing field effect and image charges.

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Authors: P. Sowa

Abstract:

The article reviews the current state of large-scale studies about the impact of electromagnetic field on natural environment. The scenario of investigations – simulation of natural conditions at the workplace, taking into consideration the influence both low and high frequency electromagnetic fields is shown.The biological effects of low and high frequency electromagnetic fields are below presented. Results of investigation with animals are shown. The norms and regulations concerning the levels of electromagnetic field intensity are reviewed.

Keywords: Electromagnetic field and environment, biological effects of electric field on human body, simulation of natural condition at workplace

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Authors: Jose A. Pomilio, Olavo Bet, Mateus P. Vieira

Abstract:

The power converter that feeds high-frequency, highvoltage transformers must be carefully designed due to parasitic components, mainly the secondary winding capacitance and the leakage inductance, that introduces resonances in relatively lowfrequency range, next to the switching frequency. This paper considers applications in which the load (resistive) has an unpredictable behavior, changing from open to short-circuit condition faster than the output voltage control loop could react. In this context, to avoid overvoltage and over current situations, that could damage the converter, the transformer or the load, it is necessary to find an operation point that assure the desired output voltage in spite of the load condition. This can done adjusting the frequency response of the transformer adding an external inductance, together with selecting the switching frequency to get stable output voltage independently of the load.

Keywords: High-voltage transformer, Resonant converter, Softcommutation.

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Authors: Shuvro Chowdhury, Esmat Farzana, Rizvi Ahmed, A. T. M. Golam Sarwar, M. Ziaur Rahman Khan

Abstract:

The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness and adding doping impurities cause an increase in the threshold voltage. Moreover, the temperature effects cause a significant amount of threshold voltage shift. The temperature dependence of threshold voltage has also been observed with Self- Consistent approach which are well supported from experimental performance of practical devices.

Keywords: C-V characteristics, Self-Consistent Analysis, Siliconon-Insulator, Ultra-thin film.

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Authors: Taeung Yoon, Youngpo Lee, Chonghan Song, Na Young Ha, Seokho Yoon

Abstract:

Ren et al. presented an efficient carrier frequency offset (CFO) estimation method for orthogonal frequency division multiplexing (OFDM), which has an estimation range as large as the bandwidth of the OFDM signal and achieves high accuracy without any constraint on the structure of the training sequence. However, its detection probability of the integer frequency offset (IFO) rapidly varies according to the fractional frequency offset (FFO) change. In this paper, we first analyze the Ren-s method and define two criteria suitable for detection of IFO. Then, we propose a novel method for the IFO estimation based on the maximum-likelihood (ML) principle and the detection criteria defined in this paper. The simulation results demonstrate that the proposed method outperforms the Ren-s method in terms of the IFO detection probability irrespective of a value of the FFO.

Keywords: Orthogonal frequency division multiplexing, integer frequency offset, estimation, training symbol

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Authors: Mangesh S. Deshpande, Raghunath S. Holambe

Abstract:

Mel Frequency Cepstral Coefficient (MFCC) features are widely used as acoustic features for speech recognition as well as speaker recognition. In MFCC feature representation, the Mel frequency scale is used to get a high resolution in low frequency region, and a low resolution in high frequency region. This kind of processing is good for obtaining stable phonetic information, but not suitable for speaker features that are located in high frequency regions. The speaker individual information, which is non-uniformly distributed in the high frequencies, is equally important for speaker recognition. Based on this fact we proposed an admissible wavelet packet based filter structure for speaker identification. Multiresolution capabilities of wavelet packet transform are used to derive the new features. The proposed scheme differs from previous wavelet based works, mainly in designing the filter structure. Unlike others, the proposed filter structure does not follow Mel scale. The closed-set speaker identification experiments performed on the TIMIT database shows improved identification performance compared to other commonly used Mel scale based filter structures using wavelets.

Keywords: Speaker identification, Wavelet transform, Feature extraction, MFCC, GMM.

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Authors: Hung-Pei Hsu, Jyi-Tsong Lin, Po-Hsieh Lin, Cheng-Hsien Chang, Ming-Tsung Shih, Chan-Hsiang Chang, Shih-Chuan Tseng, Min-Yan Lin, Shih-Wen Hsu

Abstract:

In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Keywords: Average gate length (Lavg), drain-induced barrier lowering (DIBL), L-shaped channel MOSFET (LMOS), subthreshold swing (S.S.).

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Authors: Jae-Chang Kwak, Yong-Seo Koo

Abstract:

The high efficiency power management IC (PMIC) with switching device is presented in this paper. PMIC is controlled with PFM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS (DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increase, resulting in a much higher current handling capability than standard MOSFET. PFM control circuits consist of a generator, AND gate and comparator. The generator is made to have 1.2MHz oscillation voltage. The DC-DC converter based on PFM control circuit and low on-resistance switching device is presented in this paper.

Keywords: DT-CMOS, PMIC, PFM, DC-DC converter.

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Authors: A. Alghanim, J. Benedikt, P. J. Tasker

Abstract:

The increasing demand for higher data rates in wireless communication systems has led to the more effective and efficient use of all allocated frequency bands. In order to use the whole bandwidth at maximum efficiency, one needs to have RF power amplifiers with a higher linear level and memory-less performance. This is considered to be a major challenge to circuit designers. In this thesis the linearity and memory are studied and examined via the behavior of the intermodulation distortion (IMD). A major source of the in-band distortion can be shown to be influenced by the out-of-band impedances presented at either the input or the output of the device, especially those impedances terminated the low frequency (IF) components. Thus, in order to regulate the in-band distortion, the out of-band distortion must be controllable. These investigations are performed on a 12W LDMOS device characterised at 2.1 GHz within a purpose built, high-power measurement system.

Keywords: Low Frequency Memory, IntermodulationDistortion (IMD).

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Authors: A. Leelasantitham, B. Srisuchinwong

Abstract:

A high-frequency low-power sinusoidal quadrature oscillator is presented through the use of two 2nd-order low-pass current-mirror (CM)-based filters, a 1st-order CM low-pass filter and a CM bilinear transfer function. The technique is relatively simple based on (i) inherent time constants of current mirrors, i.e. the internal capacitances and the transconductance of a diode-connected NMOS, (ii) a simple negative resistance RN formed by a resistor load RL of a current mirror. Neither external capacitances nor inductances are required. As a particular example, a 1.9-GHz, 0.45-mW, 2-V CMOS low-pass-filter-based all-current-mirror sinusoidal quadrature oscillator is demonstrated. The oscillation frequency (f0) is 1.9 GHz and is current-tunable over a range of 370 MHz or 21.6 %. The power consumption is at approximately 0.45 mW. The amplitude matching and the quadrature phase matching are better than 0.05 dB and 0.15°, respectively. Total harmonic distortions (THD) are less than 0.3 %. At 2 MHz offset from the 1.9 GHz, the carrier to noise ratio (CNR) is 90.01 dBc/Hz whilst the figure of merit called a normalized carrier-to-noise ratio (CNRnorm) is 153.03 dBc/Hz. The ratio of the oscillation frequency (f0) to the unity-gain frequency (fT) of a transistor is 0.25. Comparisons to other approaches are also included.

Keywords: Sinusoidal quadrature oscillator, low-pass-filterbased, current-mirror bilinear transfer function, all-current-mirror, negative resistance, low power, high frequency, low distortion.

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Authors: Yashvir Singh, Swati Chamoli

Abstract:

In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In_0.53Ga_0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.

Keywords: InGaAs, dielectric, lateral, power MOSFET.

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Authors: A. Hamdoune, M. Abdelmoumene, A. Hamroun

Abstract:

The objective of this paper is to simulate static I-V and dynamic characteristics of an appropriated and recessed n-GaN/AlxGa1-xN/GaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drain-source current (lDS) as a function of the drain-source voltage (VDS) for different values ​​of the gate-source voltage (VGS), and the drain-source current (lDS) depending on the gate-source voltage (VGS) for a drain-source voltage (VDS) of 20 V, for various temperatures. Then, we calculate the cut-off frequency and the maximum oscillation frequency for different temperatures.

We obtain a high drain-current equal to 60 mA, a low knee voltage (Vknee) of 2 V, a high pinch-off voltage (VGS0) of 53.5 V, a transconductance greater than 600 mS/mm, a cut-off frequency (f_T) of about 330 GHz, and a maximum oscillation frequency (fmax) of about 1 THz.

Keywords: n-GaN/AlGaN/GaN HEMT, drain-source current (IDS), transconductance (gm), cut-off frequency (fT), maximum oscillation frequency (fmax).

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Authors: Muhibul Haque Bhuyan, Quazi Deen Mohd Khosru

Abstract:

This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear equations are used to simulate the pocket profiles along the channel at the surface from the source and drain edges towards the center of the n-MOSFET. Then the effective doping concentration is derived and is used in the threshold voltage equation that is obtained by solving the Poisson-s equation in the depletion region at the surface. Simulated threshold voltages for various gate lengths fit well with the experimental data already published in the literature. The simulated result is compared with the two other pocket profiles used to derive the threshold voltage models of n-MOSFETs. The comparison shows that the linear model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices.

Keywords: Linear pocket profile, pocket implantation, nMOSFET, threshold voltage, short channel effect (SCE), reverse short channeleffect (RSCE).

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Authors: J. P. Dubois

Abstract:

Single side band modulation is a widespread technique in communication with significant impact on communication technologies such as DSL modems and ATSC TV. Its widespread utilization is due to its bandwidth and power saving characteristics. In this paper, we present a new scheme for SSB signal generation which is cost efficient and enjoys superior characteristics in terms of frequency stability, selectivity, and robustness to noise. In the process, we develop novel Hilbert transform properties.

Keywords: Crystal filter, frequency drift, frequency mixing, Hilbert transform, phasing, selectivity, single side band AM.

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Authors: Renkai Wang, Tingcun Wei

Abstract:

In this paper, a digital control algorithm based on delta-operator is presented for high-frequency digitally-controlled DC-DC switching converters. The stability and the controlling accuracy of the DC-DC switching converters are improved by using the digital control algorithm based on delta-operator without increasing the hardware circuit scale. The design method of voltage compensator in delta-domain using PID (Proportion-Integration- Differentiation) control is given in this paper, and the simulation results based on Simulink platform are provided, which have verified the theoretical analysis results very well. It can be concluded that, the presented control algorithm based on delta-operator has better stability and controlling accuracy, and easier hardware implementation than the existed control algorithms based on z-operator, therefore it can be used for the voltage compensator design in high-frequency digitally- controlled DC-DC switching converters.

Keywords: Digitally-controlled DC-DC switching converter, finite word length, control algorithm based on delta-operator, high-frequency, stability.

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Authors: Il-Do Jeong, Hang-Geun Jeong

Abstract:

This paper describes the design and fabrication of a clock and data recovery circuit (CDR). We propose a new clock and data recovery which is based on a 1/4-rate frequency detector (QRFD). The proposed frequency detector helps reduce the VCO frequency and is thus advantageous for high speed application. The proposed frequency detector can achieve low jitter operation and extend the pull-in range without using the reference clock. The proposed CDR was implemented using a 1/4-rate bang-bang type phase detector (PD) and a ring voltage controlled oscillator (VCO). The CDR circuit has been fabricated in a standard 0.18 CMOS technology. It occupies an active area of 1 x 1 and consumes 90 mW from a single 1.8V supply.

Keywords: Clock and data recovery, 1/4-rate frequency detector, 1/4-rate phase detector.

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Authors: Wang Xue, Liu Dan, Liu Ying, Wang Molin, Qian Zhihong

Abstract:

A low-complexity, high-accurate frequency offset estimation for multi-band orthogonal frequency division multiplexing (MB-OFDM) based ultra-wide band systems is presented regarding different carrier frequency offsets, different channel frequency responses, different preamble patterns in different bands. Utilizing a half-cycle Constant Amplitude Zero Auto Correlation (CAZAC) sequence as the preamble sequence, the estimator with a semi-cross contrast scheme between two successive OFDM symbols is proposed. The CRLB and complexity of the proposed algorithm are derived. Compared to the reference estimators, the proposed method achieves significantly less complexity (about 50%) for all preamble patterns of the MB-OFDM systems. The CRLBs turn out to be of well performance.

Keywords: CAZAC, Frequency Offset, Semi-cross Contrast, MB-OFDM, UWB

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Authors: Priyanka Malik A, Rishu Chaujar B, Mridula Gupta C, R.S. Gupta D

Abstract:

In this paper, for the first time, a two-dimensional (2D) analytical drain current model for sub-100 nm multi-layered gate material engineered trapezoidal recessed channel (MLGMETRC) MOSFET: a novel design is presented and investigated using ATLAS and DEVEDIT device simulators, to mitigate the large gate leakages and increased standby power consumption that arise due to continued scaling of SiO2-based gate dielectrics. The twodimensional (2D) analytical model based on solution of Poisson-s equation in cylindrical coordinates, utilizing the cylindrical approximation, has been developed which evaluate the surface potential, electric field, drain current, switching metric: ION/IOFF ratio and transconductance for the proposed design. A good agreement between the model predictions and device simulation results is obtained, verifying the accuracy of the proposed analytical model.

Keywords: ATLAS, DEVEDIT, NJD, MLGME- TRCMOSFET.

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Authors: N. P. Dhanalakshmi, R. Nagarajan

Abstract:

The sonochemical decolorization and degradation of azo dye Methyl violet using Fenton-s reagent in the presence of a high-frequency acoustic field has been investigated. Dyeing and textile effluents are the major sources of azo dyes, and are most troublesome among industrial wastewaters, causing imbalance in the eco-system. The effect of various operating conditions (initial concentration of dye, liquid-phase temperature, ultrasonic power and frequency and process time) on sonochemical degradation was investigated. Conversion was found to increase with increase in initial concentration, temperature, power level and frequency. Both horntype and tank-type sonicators were used, at various power levels (250W, 400W and 500W) for frequencies ranging from 20 kHz - 1000 kHz. A 'Process Intensification' parameter PI, was defined to quantify the enhancement of the degradation reaction by ultrasound when compared to control (i.e., without ultrasound). The present work clearly demonstrates that a high-frequency ultrasonic bath can be used to achieve higher process throughput and energy efficiency at a larger scale of operation.

Keywords: Fenton oxidation, process intensification, sonochemical degradation of MV, ultrasonic frequency.

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Authors: Somayeh Komeylian

Abstract:

Array signal processing techniques have been recently developing in a variety application of the performance enhancement of receivers by refraining the power of jamming and interference signals. In this scenario, biases induced to the antenna array receiver degrade significantly the accurate estimation of the carrier phase. Owing to the integration of frequency becomes the carrier phase, we have obtained the unbiased doppler frequency for the high precision estimation of carrier phase. The unbiased characteristic of Doppler frequency to the power jamming and the other interference signals allows achieving the highly accurate estimation of phase carrier. In this study, we have rigorously investigated the unbiased characteristic of Doppler frequency to the variation of the antenna array geometries. The simulation results have efficiently verified that the Doppler frequency remains also unbiased and accurate to the variation of antenna array geometries.

Keywords: Array signal processing, unbiased Doppler frequency, GNSS, carrier phase, slowly fluctuating point target.

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Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

Abstract:

According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling.

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Authors: R .H. Talwekar, S. S Limaye

Abstract:

The designing of charge pump with high gain Op- Amp is a challenging task for getting faithful response .Design of high performance phase locked loop require ,a design of high performance charge pump .We have designed a operational amplifier for reducing the error caused by high speed glitch in a transistor and mismatch currents . A separate Op-Amp has designed in 180 nm CMOS technology by CADENCE VIRTUOSO tool. This paper describes the design of high performance charge pump for GHz CMOS PLL targeting orthogonal frequency division multiplexing (OFDM) application. A high speed low power consumption Op-Amp with more than 500 MHz bandwidth has designed for increasing the speed of charge pump in Phase locked loop.

Keywords: Charge pump (CP) Orthogonal frequency divisionmultiplexing (OFDM), Phase locked loop (PLL), Phase frequencydetector (PFD), Voltage controlled oscillator (VCO),

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