@article{(Open Science Index):https://publications.waset.org/pdf/8199,
	  title     = {A Simulation Model for the H-gate PDSOI MOSFET},
	  author    = {Bu Jianhui and  Bi Jinshun and  Liu Mengxin and  Luo Jiajun and  Han Zhengsheng},
	  country	= {},
	  institution	= {},
	  abstract     = {The floating body effect is a serious problem for the
PDSOI MOSFET, and the H-gate layout is frequently used as the body contact to eliminate this effect. Unfortunately, most of the standard commercial SOI MOSFET model is for the device with finger gate, the
necessity of the new models for the H-gate device arises. A simulation
model for the H-gate PDSOI MOSFET is proposed based on the 0.35μm PDSOI process developed by the Institute of Microelectronics
of the Chinese Academy of Sciences (IMECAS), and then the model is well verified by the ring-oscillator.},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {6},
	  number    = {11},
	  year      = {2012},
	  pages     = {1333 - 1335},
	  ee        = {https://publications.waset.org/pdf/8199},
	  url   	= {https://publications.waset.org/vol/71},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 71, 2012},
	}