Search results for: Semiconductor Optical Amplifier (SOA).
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 854

Search results for: Semiconductor Optical Amplifier (SOA).

374 3D Dense Correspondence for 3D Dense Morphable Face Shape Model

Authors: Tae in Seol, Sun-Tae Chung, Seongwon Cho

Abstract:

Realistic 3D face model is desired in various applications such as face recognition, games, avatars, animations, and etc. Construction of 3D face model is composed of 1) building a face shape model and 2) rendering the face shape model. Thus, building a realistic 3D face shape model is an essential step for realistic 3D face model. Recently, 3D morphable model is successfully introduced to deal with the various human face shapes. 3D dense correspondence problem should be precedently resolved for constructing a realistic 3D dense morphable face shape model. Several approaches to 3D dense correspondence problem in 3D face modeling have been proposed previously, and among them optical flow based algorithms and TPS (Thin Plate Spline) based algorithms are representative. Optical flow based algorithms require texture information of faces, which is sensitive to variation of illumination. In TPS based algorithms proposed so far, TPS process is performed on the 2D projection representation in cylindrical coordinates of the 3D face data, not directly on the 3D face data and thus errors due to distortion in data during 2D TPS process may be inevitable. In this paper, we propose a new 3D dense correspondence algorithm for 3D dense morphable face shape modeling. The proposed algorithm does not need texture information and applies TPS directly on 3D face data. Through construction procedures, it is observed that the proposed algorithm constructs realistic 3D face morphable model reliably and fast.

Keywords: 3D Dense Correspondence, 3D Morphable Face Shape Model, 3D Face Modeling.

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373 Schmitt Trigger Based SRAM Using Finfet Technology- Shorted Gate Mode

Authors: Vasundara Patel K. S., Harsha N. Bhushan, Kiran G. Gadag, Nischal Prasad B. N., Mohmmed Haroon

Abstract:

The most widely used semiconductor memory types are the Dynamic Random Access Memory (DRAM) and Static Random Access memory (SRAM). Competition among memory manufacturers drives the need to decrease power consumption and reduce the probability of read failure. A technology that is relatively new and has not been explored is the FinFET technology. In this paper, a single cell Schmitt Trigger Based Static RAM using FinFET technology is proposed and analyzed. The accuracy of the result is validated by means of HSPICE simulations with 32nm FinFET technology and the results are then compared with 6T SRAM using the same technology.

Keywords: Schmitt trigger based SRAM, FinFET, and Static Noise Margin.

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372 Design of Wireless Readout System for Resonant Gas Sensors

Authors: S. Mohamed Rabeek, Mi Kyoung Park, M. Annamalai Arasu

Abstract:

This paper presents a design of a wireless read out system for tracking the frequency shift of the polymer coated piezoelectric micro electromechanical resonator due to gas absorption. The measure of this frequency shift indicates the percentage of a particular gas the sensor is exposed to. It is measured using an oscillator and an FPGA based frequency counter by employing the resonator as a frequency determining element in the oscillator. This system consists of a Gas Sensing Wireless Readout (GSWR) and an USB Wireless Transceiver (UWT). GSWR consists of an oscillator based on a trans-impedance sustaining amplifier, an FPGA based frequency readout, a sub 1GHz wireless transceiver and a micro controller. UWT can be plugged into the computer via USB port and function as a wireless module to transfer gas sensor data from GSWR to the computer through its USB port. GUI program running on the computer periodically polls for sensor data through UWT - GSWR wireless link, the response from GSWR is logged in a file for post processing as well as displayed on screen.

Keywords: Gas sensor, GSWR, micro-mechanical system, UWT, volatile emissions.

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371 Structural and Optical Properties ofInxAlyGa1-x-yN Quaternary Alloys

Authors: N. H. Abd Raof, H. Abu Hassan, S.K. Mohd Bakhori, S. S. Ng, Z. Hassan

Abstract:

Quaternary InxAlyGa1-x-yN semiconductors have attracted much research interest because the use of this quaternary offer the great flexibility in tailoring their band gap profile while maintaining their lattice-matching and structural integrity. The structural and optical properties of InxAlyGa1-x-yN alloys grown by molecular beam epitaxy (MBE) is presented. The structural quality of InxAlyGa1-x-yN layers was characterized using high-resolution X-ray diffraction (HRXRD). The results confirm that the InxAlyGa1-x-yN films had wurtzite structure and without phase separation. As the In composition increases, the Bragg angle of the (0002) InxAlyGa1-x-yN peak gradually decreases, indicating the increase in the lattice constant c of the alloys. FWHM of (0002) InxAlyGa1-x-yN decreases with increasing In composition from 0 to 0.04, that could indicate the decrease of quality of the samples due to point defects leading to non-uniformity of the epilayers. UV-VIS spectroscopy have been used to study the energy band gap of InxAlyGa1-x-yN. As the indium (In) compositions increases, the energy band gap decreases. However, for InxAlyGa1-x-yN with In composition of 0.1, the band gap shows a sudden increase in energy. This is probably due to local alloy compositional fluctuations in the epilayer. The bowing parameter which appears also to be very sensitive on In content is investigated and obtained b = 50.08 for quaternary InxAlyGa1-x-yN alloys. From photoluminescence (PL) measurement, green luminescence (GL) appears at PL spectrum of InxAlyGa1-x-yN, emitted for all x at ~530 nm and it become more pronounced as the In composition (x) increased, which is believed cause by gallium vacancies and related to isolated native defects.

Keywords: HRXRD, nitrides, PL, quaternary, UV-VIS.

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370 The Enhancement of Target Localization Using Ship-Borne Electro-Optical Stabilized Platform

Authors: Jaehoon Ha, Byungmo Kang, Kilho Hong, Jungsoo Park

Abstract:

Electro-optical (EO) stabilized platforms have been widely used for surveillance and reconnaissance on various types of vehicles, from surface ships to unmanned air vehicles (UAVs). EO stabilized platforms usually consist of an assembly of structure, bearings, and motors called gimbals in which a gyroscope is installed. EO elements such as a CCD camera and IR camera, are mounted to a gimbal, which has a range of motion in elevation and azimuth and can designate and track a target. In addition, a laser range finder (LRF) can be added to the gimbal in order to acquire the precise slant range from the platform to the target. Recently, a versatile functionality of target localization is needed in order to cooperate with the weapon systems that are mounted on the same platform. The target information, such as its location or velocity, needed to be more accurate. The accuracy of the target information depends on diverse component errors and alignment errors of each component. Specially, the type of moving platform can affect the accuracy of the target information. In the case of flying platforms, or UAVs, the target location error can be increased with altitude so it is important to measure altitude as precisely as possible. In the case of surface ships, target location error can be increased with obliqueness of the elevation angle of the gimbal since the altitude of the EO stabilized platform is supposed to be relatively low. The farther the slant ranges from the surface ship to the target, the more extreme the obliqueness of the elevation angle. This can hamper the precise acquisition of the target information. So far, there have been many studies on EO stabilized platforms of flying vehicles. However, few researchers have focused on ship-borne EO stabilized platforms of the surface ship. In this paper, we deal with a target localization method when an EO stabilized platform is located on the mast of a surface ship. Especially, we need to overcome the limitation caused by the obliqueness of the elevation angle of the gimbal. We introduce a well-known approach for target localization using Unscented Kalman Filter (UKF) and present the problem definition showing the above-mentioned limitation. Finally, we want to show the effectiveness of the approach that will be demonstrated through computer simulations.

Keywords: Target localization, ship-borne electro-optical stabilized platform, unscented Kalman filter.

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369 A Performance Comparison of Golay and Reed-Muller Coded OFDM Signal for Peak-to-Average Power Ratio Reduction

Authors: Sanjay Singh, M Sathish Kumar, H. S Mruthyunjaya

Abstract:

Multicarrier transmission system such as Orthogonal Frequency Division Multiplexing (OFDM) is a promising technique for high bit rate transmission in wireless communication systems. OFDM is a spectrally efficient modulation technique that can achieve high speed data transmission over multipath fading channels without the need for powerful equalization techniques. A major drawback of OFDM is the high Peak-to-Average Power Ratio (PAPR) of the transmit signal which can significantly impact the performance of the power amplifier. In this paper we have compared the PAPR reduction performance of Golay and Reed-Muller coded OFDM signal. From our simulation it has been found that the PAPR reduction performance of Golay coded OFDM is better than the Reed-Muller coded OFDM signal. Moreover, for the optimum PAPR reduction performance, code configuration for Golay and Reed-Muller codes has been identified.

Keywords: OFDM, PAPR, Perfect Codes, Golay Codes, Reed-Muller Codes

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368 Optimization and Determination of Process Parameters in Thin Film SOI Photo-BJMOSFET

Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Guo-Liang Zhang, Tai-Hong Wang

Abstract:

We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V.

Keywords: Photo-to-dark-current contrast ratio, Photo-current, Dark-current, Process parameter

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367 RF Power Consumption Emulation Optimized with Interval Valued Homotopies

Authors: Deogratius Musiige, François Anton, Vital Yatskevich, Laulagnet Vincent, Darka Mioc, Nguyen Pierre

Abstract:

This paper presents a methodology towards the emulation of the electrical power consumption of the RF device during the cellular phone/handset transmission mode using the LTE technology. The emulation methodology takes the physical environmental variables and the logical interface between the baseband and the RF system as inputs to compute the emulated power dissipation of the RF device. The emulated power, in between the measured points corresponding to the discrete values of the logical interface parameters is computed as a polynomial interpolation using polynomial basis functions. The evaluation of polynomial and spline curve fitting models showed a respective divergence (test error) of 8% and 0.02% from the physically measured power consumption. The precisions of the instruments used for the physical measurements have been modeled as intervals. We have been able to model the power consumption of the RF device operating at 5MHz using homotopy between 2 continuous power consumptions of the RF device operating at the bandwidths 3MHz and 10MHz.

Keywords: Radio frequency, high power amplifier, baseband, LTE, power, emulation, homotopy, interval analysis, Tx power, register-transfer level.

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366 Spectral Amplitude Coding Optical CDMA: Performance Analysis of PIIN Reduction Using VC Code Family

Authors: Hassan Yousif Ahmed, Ibrahima Faye, N.M.Saad, S.A. Aljined

Abstract:

Multi-user interference (MUI) is the main reason of system deterioration in the Spectral Amplitude Coding Optical Code Division Multiple Access (SAC-OCDMA) system. MUI increases with the number of simultaneous users, resulting into higher probability bit rate and limits the maximum number of simultaneous users. On the other hand, Phase induced intensity noise (PIIN) problem which is originated from spontaneous emission of broad band source from MUI severely limits the system performance should be addressed as well. Since the MUI is caused by the interference of simultaneous users, reducing the MUI value as small as possible is desirable. In this paper, an extensive study for the system performance specified by MUI and PIIN reducing is examined. Vectors Combinatorial (VC) codes families are adopted as a signature sequence for the performance analysis and a comparison with reported codes is performed. The results show that, when the received power increases, the PIIN noise for all the codes increases linearly. The results also show that the effect of PIIN can be minimized by increasing the code weight leads to preserve adequate signal to noise ratio over bit error probability. A comparison study between the proposed code and the existing codes such as Modified frequency hopping (MFH), Modified Quadratic- Congruence (MQC) has been carried out.

Keywords: FBG, MUI, PIIN, SAC-OCDMA, VCC.

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365 Fluorescence Quenching as an Efficient Tool for Sensing Application: Study on the Fluorescence Quenching of Naphthalimide Dye by Graphene Oxide

Authors: Sanaz Seraj, Shohre Rouhani

Abstract:

Recently, graphene has gained much attention because of its unique optical, mechanical, electrical, and thermal properties. Graphene has been used as a key material in the technological applications in various areas such as sensors, drug delivery, super capacitors, transparent conductor, and solar cell. It has a superior quenching efficiency for various fluorophores. Based on these unique properties, the optical sensors with graphene materials as the energy acceptors have demonstrated great success in recent years. During quenching, the emission of a fluorophore is perturbed by a quencher which can be a substrate or biomolecule, and due to this phenomenon, fluorophore-quencher has been used for selective detection of target molecules. Among fluorescence dyes, 1,8-naphthalimide is well known for its typical intramolecular charge transfer (ICT) and photo-induced charge transfer (PET) fluorophore, strong absorption and emission in the visible region, high photo stability, and large Stokes shift. Derivatives of 1,8-naphthalimides have found applications in some areas, especially fluorescence sensors. Herein, the fluorescence quenching of graphene oxide has been carried out on a naphthalimide dye as a fluorescent probe model. The quenching ability of graphene oxide on naphthalimide dye was studied by UV-VIS and fluorescence spectroscopy. This study showed that graphene is an efficient quencher for fluorescent dyes. Therefore, it can be used as a suitable candidate sensing platform. To the best of our knowledge, studies on the quenching and absorption of naphthalimide dyes by graphene oxide are rare.

Keywords: Fluorescence, graphene oxide, naphthalimide dye, quenching.

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364 Vertically Grown p–Type ZnO Nanorod on Ag Thin Film

Authors: Jihyun Park, Tae Il Lee, Jae-Min Myoung

Abstract:

A Silver (Ag) thin film is introduced as a template and doping source for vertically aligned p–type ZnO nanorods. ZnO nanorods were grown using an ammonium hydroxide based hydrothermal process. During the hydrothermal process, the Ag thin film was dissolved to generate Ag ions in the solution. The Ag ions can contribute to doping in the wurzite structure of ZnO and the (111) grain of Ag thin film can be the epitaxial temporal template for the (0001) plane of ZnO. Hence, Ag–doped p–type ZnO nanorods were successfully grown on the substrate, which can be an electrode or semiconductor for the device application. To demonstrate the potentials of this idea, p–n diode was fabricated and its electrical characteristics were demonstrated.

Keywords: Ag–doped ZnO nanorods, Hydrothermal process, p–n homo–junction diode, p–type ZnO.

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363 Methodology of Realization for Supervisor and Simulator Dedicated to a Semiconductor Research and Production Factory

Authors: Hanane Ondella, Pierre Ladet, David Ferrand, Pat Sloan

Abstract:

In the micro and nano-technology industry, the «clean-rooms» dedicated to manufacturing chip, are equipped with the most sophisticated equipment-tools. There use a large number of resources in according to strict specifications for an optimum working and result. The distribution of «utilities» to the production is assured by teams who use a supervision tool. The studies show the interest to control the various parameters of production or/and distribution, in real time, through a reliable and effective supervision tool. This document looks at a large part of the functions that the supervisor must assure, with complementary functionalities to help the diagnosis and simulation that prove very useful in our case where the supervised installations are complexed and in constant evolution.

Keywords: Control-Command, evolution, non regression, performances, real time, simulation, supervision.

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362 ZVZCT PWM Boost DC-DC Converter

Authors: İsmail Aksoy, Hacı Bodur, Nihan Altıntas

Abstract:

This paper introduces a boost converter with a new active snubber cell. In this circuit, all of the semiconductor components in the converter softly turns on and turns off with the help of the active snubber cell. Compared to the other converters, the proposed converter has advantages of size, number of components and cost. The main feature of proposed converter is that the extra voltage stresses do not occur on the main switches and main diodes. Also, the current stress on the main switch is acceptable level. Moreover, the proposed converter can operates under light load conditions and wide input line voltage. In this study, the operating principle of the proposed converter is presented and its operation is verified with the Proteus simulation software for a 1 kW and 100 kHz model.

Keywords: Active snubber cell, boost converter, zero current switching, zero voltage switching.

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361 Optimal Resource Configuration and Allocation Planning Problem for Bottleneck Machines and Auxiliary Tools

Authors: Yin-Yann Chen, Tzu-Ling Chen

Abstract:

This study presents the case of an actual Taiwanese semiconductor assembly and testing manufacturer. Three major bottleneck manufacturing processes, namely, die bond, wire bond, and molding, are analyzed to determine how to use finite resources to achieve the optimal capacity allocation. A medium-term capacity allocation planning model is developed by considering the optimal total profit to satisfy the promised volume demanded by customers and to obtain the best migration decision among production lines for machines and tools. Finally, sensitivity analysis based on the actual case is provided to explore the effect of various parameter levels.

Keywords: Capacity planning, capacity allocation, machine migration, resource configuration.

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360 Analysis of CNT Bundle and its Comparison with Copper for FPGAs Interconnects

Authors: Kureshi Abdul Kadir, Mohd. Hasan

Abstract:

Each new semiconductor technology node brings smaller transistors and wires. Although this makes transistors faster, wires get slower. In nano-scale regime, the standard copper (Cu) interconnect will become a major hurdle for FPGA interconnect due to their high resistivity and electromigration. This paper presents the comprehensive evaluation of mixed CNT bundle interconnects and investigates their prospects as energy efficient and high speed interconnect for future FPGA routing architecture. All HSPICE simulations are carried out at operating frequency of 1GHz and it is found that mixed CNT bundle implemented in FPGAs as interconnect can potentially provide a substantial delay and energy reduction over traditional interconnects at 32nm process technology.

Keywords: CMOS, Copper Interconnect, Mixed CNT Bundle Interconnect, FPGAs.

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359 An Embedded System Design for SRAM SEU Test

Authors: Kyoung Kun Lee, Soongyu Kwon, Jong Tae Kim

Abstract:

An embedded system for SEU(single event upset) test needs to be designed to prevent system failure by high-energy particles during measuring SEU. SEU is a phenomenon in which the data is changed temporary in semiconductor device caused by high-energy particles. In this paper, we present an embedded system for SRAM(static random access memory) SEU test. SRAMs are on the DUT(device under test) and it is separated from control board which manages the DUT and measures the occurrence of SEU. It needs to have considerations for preventing system failure while managing the DUT and making an accurate measurement of SEUs. We measure the occurrence of SEUs from five different SRAMs at three different cyclotron beam energies 30, 35, and 40MeV. The number of SEUs of SRAMs ranges from 3.75 to 261.00 in average.

Keywords: embedded system, single event upset, SRAM

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358 Simulation Study of Lateral Trench Gate Power MOSFET on 4H-SiC

Authors: Yashvir Singh, Mayank Joshi

Abstract:

A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.

Keywords: 4H-SiC, lateral, trench-gate, power MOSFET.

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357 Thermal and Visual Performance of Solar Control Film

Authors: Norzita Jaafar, Nor Zaini Zakaria, Azni Zain Ahmed, Razidah Ismail

Abstract:

The use of solar control film on windows as one of solar passive strategies for building have becoming important and is gaining recognition. Malaysia located close to equator is having warm humid climate with long sunshine hours and abundant solar radiation throughout the year. Hence, befitting solar control on windows is absolutely necessary to capture the daylight whilst moderating thermal impact and eliminating glare problems. This is one of the energy efficient strategies to achieve thermal and visual comfort in buildings. Therefore, this study was carried out to investigate the effect of window solar controls on thermal and visual performance of naturally ventilated buildings. This was conducted via field data monitoring using a test building facility. Four types of window glazing systems were used with three types of solar control films. Data were analysed for thermal and visual impact with reference to thermal and optical characteristics of the films. Results show that for each glazing system, the surface temperature of windows are influenced by the Solar Energy Absorption property, the indoor air temperature are influenced by the Solar Energy Transmittance and Solar Energy Reflectance, and the daylighting by Visible Light Transmission and Shading Coefficient. Further investigations are underway to determine the mathematical relation between thermal energy and visual performance with the thermal and optical characteristics of solar control films.

Keywords: window, solar control film, natural ventilation, thermal performance, visual performance

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356 Evaluating the Tool Wear Rate in Ultrasonic Machining of Titanium using Design of Experiments Approach

Authors: Jatinder Kumar, Vinod Kumar

Abstract:

Ultrasonic machining (USM) is a non-traditional machining process being widely used for commercial machining of brittle and fragile materials such as glass, ceramics and semiconductor materials. However, USM could be a viable alternative for machining a tough material such as titanium; and this aspect needs to be explored through experimental research. This investigation is focused on exploring the use of ultrasonic machining for commercial machining of pure titanium (ASTM Grade-I) and evaluation of tool wear rate (TWR) under controlled experimental conditions. The optimal settings of parameters are determined through experiments planned, conducted and analyzed using Taguchi method. In all, the paper focuses on parametric optimization of ultrasonic machining of pure titanium metal with TWR as response, and validation of the optimized value of TWR by conducting confirmatory experiments.

Keywords: Ultrasonic machining, titanium, tool wear rate

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355 Comparative Study of Al2O3 and HfO2 as Gate Dielectric on AlGaN/GaN MOSHEMTs

Authors: K. Karami, S. Hassan, S. Taking, A. Ofiare, A. Dhongde, A. Al-Khalidi, E. Wasige

Abstract:

We have made a comparative study on the influence of Al2O3 and HfO2 grown using Atomic Layer Deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of A2lO3 and HfO2 respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al2O3 gate dielectric layers, respectively. The negative shift for the 20 nm HfO2 and 20 nm Al2O3 were 1.2 V and 4.9 V, respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO2 than Al2O3. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 104 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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354 Dimensioning of Subsynchronous Cascade for Speed Regulation of Two-Motors 6kv Conveyer Drives

Authors: M. Kasumović, A. Hodžić, M. Tešanović

Abstract:

One way for optimum loading of overdimensioning conveyers is speed (capacity) decrement, with attention for production capabilities and demands. At conveyers which drives with three phase slip-ring induction motor, technically reasonable solution for conveyer (driving motors) speed regulation is using constant torque subsynchronous cascade with static semiconductor converter and transformer for energy reversion to the power network. In the paper is described mathematical model for parameter calculation of two-motors 6 kV subsynchronous cascade. It is also demonstrated that applying of this cascade gave several good properties, foremost in electrical energy saving, also in improving of other energy indexes, and finally that results in cost reduction of complete electrical motor drive.

Keywords: Conveyer with rubber belt, electrical motor drive, sub synchronous cascade

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353 Detailed Sensitive Detection of Impurities in Waste Engine Oils Using Laser Induced Breakdown Spectroscopy, Rotating Disk Electrode Optical Emission Spectroscopy and Surface Plasmon Resonance

Authors: Cherry Dhiman, Ayushi Paliwal, Mohd. Shahid Khan, M. N. Reddy, Vinay Gupta, Monika Tomar

Abstract:

The laser based high resolution spectroscopic experimental techniques such as Laser Induced Breakdown Spectroscopy (LIBS), Rotating Disk Electrode Optical Emission spectroscopy (RDE-OES) and Surface Plasmon Resonance (SPR) have been used for the study of composition and degradation analysis of used engine oils. Engine oils are mainly composed of aliphatic and aromatics compounds and its soot contains hazardous components in the form of fine, coarse and ultrafine particles consisting of wear metal elements. Such coarse particulates matter (PM) and toxic elements are extremely dangerous for human health that can cause respiratory and genetic disorder in humans. The combustible soot from thermal power plants, industry, aircrafts, ships and vehicles can lead to the environmental and climate destabilization. It contributes towards global pollution for land, water, air and global warming for environment. The detection of such toxicants in the form of elemental analysis is a very serious issue for the waste material management of various organic, inorganic hydrocarbons and radioactive waste elements. In view of such important points, the current study on used engine oils was performed. The fundamental characterization of engine oils was conducted by measuring water content and kinematic viscosity test that proves the crude analysis of the degradation of used engine oils samples. The microscopic quantitative and qualitative analysis was presented by RDE-OES technique which confirms the presence of elemental impurities of Pb, Al, Cu, Si, Fe, Cr, Na and Ba lines for used waste engine oil samples in few ppm. The presence of such elemental impurities was confirmed by LIBS spectral analysis at various transition levels of atomic line. The recorded transition line of Pb confirms the maximum degradation which was found in used engine oil sample no. 3 and 4. Apart from the basic tests, the calculations for dielectric constants and refractive index of the engine oils were performed via SPR analysis.

Keywords: Laser induced breakdown spectroscopy, rotating disk electrode optical emission spectroscopy, surface plasmon resonance, ICCD spectrometer, Nd:YAG laser, engine oil.

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352 Measurement of I-V Characteristics of a PtSi/p-Si Schottky Barrier Diode at low Temperatures

Authors: Somayeh Gholami, Meysam Khakbaz

Abstract:

The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height (), ideality factor (n) and series resistance () were found to be 0.2045 eV, 2.877 and 14.556 K respectively. By measuring the I-V characteristics in the temperature range of 85-136 K the electrical parameters were observed to have strong dependency on temperature. The increase of barrier height and decrease of ideality factor with increasing temperature is attributed to the existence of barrier height inhomogeneities in the silicide-semiconductor structure.

Keywords: Schottky diode, barrier height, series resistance, I-V, barrier height inhomogeneities.

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351 A CUSUM Control Chart to Monitor Wafer Quality

Authors: Sheng-Shu Cheng, Fong-Jung Yu

Abstract:

C-control chart assumes that process nonconformities follow a Poisson distribution. In actuality, however, this Poisson distribution does not always occur. A process control for semiconductor based on a Poisson distribution always underestimates the true average amount of nonconformities and the process variance. Quality is described more accurately if a compound Poisson process is used for process control at this time. A cumulative sum (CUSUM) control chart is much better than a C control chart when a small shift will be detected. This study calculates one-sided CUSUM ARLs using a Markov chain approach to construct a CUSUM control chart with an underlying Poisson-Gamma compound distribution for the failure mechanism. Moreover, an actual data set from a wafer plant is used to demonstrate the operation of the proposed model. The results show that a CUSUM control chart realizes significantly better performance than EWMA.

Keywords: Nonconformities, Compound Poisson distribution, CUSUM control chart.

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350 Directionally-Sensitive Personal Wearable Radiation Dosimeter

Authors: Hai Huu Le, Paul Junor, Moshi Geso, Graeme O’Keefe

Abstract:

In this paper, the authors propose a personal wearable directionally-sensitive radiation dosimeter using multiple semiconductor CdZnTe detectors. The proposed dosimeter not only measures the real-time dose rate but also provide the direction of the radioactive source. A linear relationship between radioactive source direction and the radiation intensity measured by each detectors is established and an equation to determine the source direction is derived by the authors. The efficiency and accuracy of the proposed dosimeter is verified by simulation using Geant4 package. Results have indicated that in a measurement duration of about 7 seconds, the proposed dosimeter was able to estimate the direction of a 10μCi 137/55Cs radioactive source to within 2 degrees.

Keywords: Dose rate, Geant4 package, radiation detectors, radioactive source direction.

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349 An Investigation of Surface Texturing by Ultrasonic Impingement of Micro-Particles

Authors: Nagalingam Arun Prasanth, Ahmed Syed Adnan, S. H. Yeo

Abstract:

Surface topography plays a significant role in the functional performance of engineered parts. It is important to have a control on the surface geometry and understanding on the surface details to get the desired performance. Hence, in the current research contribution, a non-contact micro-texturing technique has been explored and developed. The technique involves ultrasonic excitation of a tool as a prime source of surface texturing for aluminum alloy workpieces. The specimen surface is polished first and is then immersed in a liquid bath containing 10% weight concentration of Ti6Al4V grade 5 spherical powders. A submerged slurry jet is used to recirculate the spherical powders under the ultrasonic horn which is excited at an ultrasonic frequency and amplitude of 40 kHz and 70 µm respectively. The distance between the horn and workpiece surface was remained fixed at 200 µm using a precision control stage. Texturing effects were investigated for different process timings of 1, 3 and 5 s. Thereafter, the specimens were cleaned in an ultrasonic bath for 5 mins to remove loose debris on the surface. The developed surfaces are characterized by optical and contact surface profiler. The optical microscopic images show a texture of circular spots on the workpiece surface indented by titanium spherical balls. Waviness patterns obtained from contact surface profiler supports the texturing effect produced from the proposed technique. Furthermore, water droplet tests were performed to show the efficacy of the proposed technique to develop hydrophilic surfaces and to quantify the texturing effect produced.

Keywords: Surface texturing, surface modification, topography, ultrasonic.

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348 Macular Ganglion Cell Inner Plexiform Layer Thinning in Patients with Visual Field Defect that Respects the Vertical Meridian

Authors: Hye-Young Shin, Chan Kee Park

Abstract:

Background: To compare the thinning patterns of the ganglion cell-inner plexiform layer (GCIPL) and peripapillary retinal nerve fiber layer (pRNFL) as measured using Cirrus high-definition optical coherence tomography (HD-OCT) in patients with visual field (VF) defects that respect the vertical meridian. Methods: Twenty eyes of eleven patients with VF defects that respect the vertical meridian were enrolled retrospectively. The thicknesses of the macular GCIPL and pRNFL were measured using Cirrus HD-OCT. The 5% and 1% thinning area index (TAI) was calculated as the proportion of abnormally thin sectors at the 5% and 1% probability level within the area corresponding to the affected VF. The 5% and 1% TAI were compared between the GCIPL and pRNFL measurements. Results: The color-coded GCIPL deviation map showed a characteristic vertical thinning pattern of the GCIPL, which is also seen in the VF of patients with brain lesions. The 5% and 1% TAI were significantly higher in the GCIPL measurements than in the pRNFL measurements (all P < 0.01). Conclusions: Macular GCIPL analysis clearly visualized a characteristic topographic pattern of retinal ganglion cell (RGC) loss in patients with VF defects that respect the vertical meridian, unlike pRNFL measurements. Macular GCIPL measurements provide more valuable information than pRNFL measurements for detecting the loss of RGCs in patients with retrograde degeneration of the optic nerve fibers.

Keywords: Brain lesion, Macular ganglion cell-Inner plexiform layer, Spectral-domain optical coherence tomography.

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347 A Process of Forming a Single Competitive Factor in the Digital Camera Industry

Authors: Kiyohiro Yamazaki

Abstract:

This paper considers a forming process of a single competitive factor in the digital camera industry from the viewpoint of product platform. To make product development easier for companies and to increase product introduction ratios, development efforts concentrate on improving and strengthening certain product attributes, and it is born in the process that the product platform is formed continuously. It is pointed out that the formation of this product platform raises product development efficiency of individual companies, but on the other hand, it has a trade-off relationship of causing unification of competitive factors in the whole industry. This research tries to analyze product specification data which were collected from the web page of digital camera companies. Specifically, this research collected all product specification data released in Japan from 1995 to 2003 and analyzed the composition of image sensor and optical lens; and it identified product platforms shared by multiple products and discussed their application. As a result, this research found that the product platformation was born in the development of the standard product for major market segmentation. Every major company has made product platforms of image sensors and optical lenses, and as a result, this research found that the competitive factors were unified in the entire industry throughout product platformation. In other words, this product platformation brought product development efficiency of individual firms; however, it also caused industrial competition factors to be unified in the industry.

Keywords: Digital camera industry, product evolution trajectory, product platform, unification of competitive factors.

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346 A Study on Algorithm Fusion for Recognition and Tracking of Moving Robot

Authors: Jungho Choi, Youngwan Cho

Abstract:

This paper presents an algorithm for the recognition and tracking of moving objects, 1/10 scale model car is used to verify performance of the algorithm. Presented algorithm for the recognition and tracking of moving objects in the paper is as follows. SURF algorithm is merged with Lucas-Kanade algorithm. SURF algorithm has strong performance on contrast, size, rotation changes and it recognizes objects but it is slow due to many computational complexities. Processing speed of Lucas-Kanade algorithm is fast but the recognition of objects is impossible. Its optical flow compares the previous and current frames so that can track the movement of a pixel. The fusion algorithm is created in order to solve problems which occurred using the Kalman Filter to estimate the position and the accumulated error compensation algorithm was implemented. Kalman filter is used to create presented algorithm to complement problems that is occurred when fusion two algorithms. Kalman filter is used to estimate next location, compensate for the accumulated error. The resolution of the camera (Vision Sensor) is fixed to be 640x480. To verify the performance of the fusion algorithm, test is compared to SURF algorithm under three situations, driving straight, curve, and recognizing cars behind the obstacles. Situation similar to the actual is possible using a model vehicle. Proposed fusion algorithm showed superior performance and accuracy than the existing object recognition and tracking algorithms. We will improve the performance of the algorithm, so that you can experiment with the images of the actual road environment.

Keywords: SURF, Optical Flow Lucas-Kanade, Kalman Filter, object recognition, object tracking.

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345 Theory of Nanowire Radial p-n-Junction

Authors: Stepan Petrosyan, Ashkhen Yesayan, Suren Nersesyan

Abstract:

We have developed an analytic model for the radial pn-junction in a nanowire (NW) core-shell structure utilizing as a new building block in different semiconductor devices. The potential distribution through the p-n-junction is calculated and the analytical expressions are derived to compute the depletion region widths. We show that the widths of space charge layers, surrounding the core, are the functions of core radius, which is the manifestation of so called classical size effect. The relationship between the depletion layer width and the built-in potential in the asymptotes of infinitely large core radius transforms to square-root dependence specific for conventional planar p-n-junctions. The explicit equation is derived to compute the capacitance of radial p-n-junction. The current-voltage behavior is also carefully determined taking into account the “short base" effects.

Keywords: Snanowire, p-n- junction, barrier capacitance, high injection.

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