Search results for: AC voltage regulator
661 Dynamic Variation in Nano-Scale CMOS SRAM Cells Due to LF/RTS Noise and Threshold Voltage
Authors: M. Fadlallah, G. Ghibaudo, C. G. Theodorou
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The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.
Keywords: Low-frequency noise, Random Telegraph Noise, Dynamic Variation, SRRV.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 730660 Investigation of Constant Transconductance Circuit for Low Power Low-Noise Amplifier
Authors: Wei Yi Lim, M. Annamalai Arasu, M. Kumarasamy Raja, Minkyu Je
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In this paper, the design of wide-swing constant transconductance (gm) bias circuit that generates bias voltage for low-noise amplifier (LNA) circuit design by using an off-chip resistor is demonstrated. The overall transconductance (Gm) generated by the constant gm bias circuit is important to maintain the overall gain and noise figure of the LNA circuit. Therefore, investigation is performed to study the variation in Gm with process, temperature and supply voltage (PVT). Temperature and supply voltage are swept from -10 °C to 85 °C and 1.425 V to 1.575 V respectively, while the process conditions are also varied to the extreme and the gm variation is eventually concluded at between -3 % to 7 %. With the slight variation in the gm value, through simulation, at worst condition of state SS, we are able to attain a conversion gain (S21) variation of -3.10 % and a noise figure (NF) variation of 18.71 %. The whole constant gm circuit draws approximately 100 µA from a 1.5V supply and is designed based on 0.13 µm CMOS process.
Keywords: Transconductance, LNA, temperature, process.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 4134659 Effect of Non Uniformity Factors and Assignment Factors on Errors in Charge Simulation Method with Point Charge Model
Authors: Gururaj S Punekar, N K Kishore Senior, H S Y Shastry
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Charge Simulation Method (CSM) is one of the very widely used numerical field computation technique in High Voltage (HV) engineering. The high voltage fields of varying non uniformities are encountered in practice. CSM programs being case specific, the simulation accuracies heavily depend on the user (programmers) experience. Here is an effort to understand CSM errors and evolve some guidelines to setup accurate CSM models, relating non uniformities with assignment factors. The results are for the six-point-charge model of sphere-plane gap geometry. Using genetic algorithm (GA) as tool, optimum assignment factors at different non uniformity factors for this model have been evaluated and analyzed. It is shown that the symmetrically placed six-point-charge models can be good enough to set up CSM programs with potential errors less than 0.1% when the field non uniformity factor is greater than 2.64 (field utilization factor less than 52.76%).
Keywords: Assignment factor, Charge Simulation Method, High Voltage, Numerical field computation, Non uniformity factor, Simulation errors.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2057658 Pull-In Instability Determination of Microcapacitive Sensor for Measuring Special Range of Pressure
Authors: Yashar Haghighatfar, Shahrzad Mirhosseini
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Pull-in instability is a nonlinear and crucial effect that is important for the design of microelectromechanical system devices. In this paper, the appropriate electrostatic voltage range is determined by measuring fluid flow pressure via micro pressure sensor based microbeam. The microbeam deflection contains two parts, the static and perturbation deflection of static. The second order equation regarding the equivalent stiffness, mass and damping matrices based on Galerkin method is introduced to predict pull-in instability due to the external voltage. Also the reduced order method is used for solving the second order nonlinear equation of motion. Furthermore, in the present study, the micro capacitive pressure sensor is designed for measuring special fluid flow pressure range. The results show that the measurable pressure range can be optimized, regarding damping field and external voltage.
Keywords: MEMS, pull-in instability, electrostatically actuated microbeam, reduced order method.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 774657 CMOS Positive and Negative Resistors Based on Complementary Regulated Cascode Topology with Cross-Coupled Regulated Transistors
Authors: Kittipong Tripetch, Nobuhiko Nakano
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Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at ±0.9 V.
Keywords: Complementary common gate, complementary regulated cascode, current mirror, floating active resistors.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 963656 A Superior Delay Estimation Model for VLSI Interconnect in Current Mode Signaling
Authors: Sunil Jadav, Rajeevan Chandel Munish Vashishath
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Today’s VLSI networks demands for high speed. And in this work the compact form mathematical model for current mode signalling in VLSI interconnects is presented.RLC interconnect line is modelled using characteristic impedance of transmission line and inductive effect. The on-chip inductance effect is dominant at lower technology node is emulated into an equivalent resistance. First order transfer function is designed using finite difference equation, Laplace transform and by applying the boundary conditions at the source and load termination. It has been observed that the dominant pole determines system response and delay in the proposed model. The novel proposed current mode model shows superior performance as compared to voltage mode signalling. Analysis shows that current mode signalling in VLSI interconnects provides 2.8 times better delay performance than voltage mode. Secondly the damping factor of a lumped RLC circuit is shown to be a useful figure of merit.
Keywords: Current Mode, Voltage Mode, VLSI Interconnect.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2455655 Design and Analysis of an 8T Read Decoupled Dual Port SRAM Cell for Low Power High Speed Applications
Authors: Ankit Mitra
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Speed, power consumption and area, are some of the most important factors of concern in modern day memory design. As we move towards Deep Sub-Micron Technologies, the problems of leakage current, noise and cell stability due to physical parameter variation becomes more pronounced. In this paper we have designed an 8T Read Decoupled Dual Port SRAM Cell with Dual Threshold Voltage and characterized it in terms of read and write delay, read and write noise margins, Data Retention Voltage and Leakage Current. Read Decoupling improves the Read Noise Margin and static power dissipation is reduced by using Dual-Vt transistors. The results obtained are compared with existing 6T, 8T, 9T SRAM Cells, which shows the superiority of the proposed design. The Cell is designed and simulated in TSPICE using 90nm CMOS process.
Keywords: CMOS, Dual-Port, Data Retention Voltage, 8T SRAM, Leakage Current, Noise Margin, Loop-cutting, Single-ended.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3475654 Designing and Manufacturing High Voltage Pulse Generator with Adjustable Pulse and Monitoring Current and Voltage: Food Processing Application
Authors: H. Mirzaee, A. Pourzaki
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Using strength Pulse Electrical Field (PEF) in food industries is a non-thermal process that can deactivate microorganisms and increase penetration in plant and animals tissues without serious impact on food taste and quality. In this paper designing and fabricating of a PEF generator has been presented. Pulse generation methods have been surveyed and the best of them selected. The equipment by controller set can generate square pulse with adjustable parameters such as amplitude 1-5kV, frequency 0.1-10Hz, pulse width 10-100s, and duty cycle 0-100%. Setting the number of pulses, and presenting the output voltage and current waveforms on the oscilloscope screen are another advantages of this equipment. Finally, some food samples were tested that yielded the satisfactory results. PEF applying had considerable effects on potato, banana and purple cabbage. It caused increase Brix factor from 0.05 to 0.15 in potato solution. It is also so effective in extraction color material from purple cabbage. In the last experiment effects of PEF voltages on color extraction of saffron scum were surveyed (about 6% increasing yield).Keywords: PEF, Capacitor, Switch, IGBT
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 4219653 Investigation of the Effect of Impulse Voltage to Flashover by Using Water Jet
Authors: Harun Gülan, Muhsin Tunay Gencoglu, Mehmet Cebeci
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The main function of the insulators used in high voltage (HV) transmission lines is to insulate the energized conductor from the pole and hence from the ground. However, when the insulators fail to perform this insulation function due to various effects, failures occur. The deterioration of the insulation results either from breakdown or surface flashover. The surface flashover is caused by the layer of pollution that forms conductivity on the surface of the insulator, such as salt, carbonaceous compounds, rain, moisture, fog, dew, industrial pollution and desert dust. The source of the majority of failures and interruptions in HV lines is surface flashover. This threatens the continuity of supply and causes significant economic losses. Pollution flashover in HV insulators is still a serious problem that has not been fully resolved. In this study, a water jet test system has been established in order to investigate the behavior of insulators under dirty conditions and to determine their flashover performance. Flashover behavior of the insulators is examined by applying impulse voltages in the test system. This study aims to investigate the insulator behaviour under high impulse voltages. For this purpose, a water jet test system was installed and experimental results were obtained over a real system and analyzed. By using the water jet test system instead of the actual insulator, the damage to the insulator as a result of the flashover that would occur under impulse voltage was prevented. The results of the test system performed an important role in determining the insulator behavior and provided predictability.
Keywords: Insulator, pollution flashover, high impulse voltage, water jet model.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1255652 Replacing MOSFETs with Single Electron Transistors (SET) to Reduce Power Consumption of an Inverter Circuit
Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam
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According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.
Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1805651 Star-Hexagon Transformer Supported UPQC
Authors: Yash Pal, A.Swarup, Bhim Singh
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A new topology of unified power quality conditioner (UPQC) is proposed for different power quality (PQ) improvement in a three-phase four-wire (3P-4W) distribution system. For neutral current mitigation, a star-hexagon transformer is connected in shunt near the load along with three-leg voltage source inverters (VSIs) based UPQC. For the mitigation of source neutral current, the uses of passive elements are advantageous over the active compensation due to ruggedness and less complexity of control. In addition to this, by connecting a star-hexagon transformer for neutral current mitigation the over all rating of the UPQC is reduced. The performance of the proposed topology of 3P-4W UPQC is evaluated for power-factor correction, load balancing, neutral current mitigation and mitigation of voltage and currents harmonics. A simple control algorithm based on Unit Vector Template (UVT) technique is used as a control strategy of UPQC for mitigation of different PQ problems. In this control scheme, the current/voltage control is applied over the fundamental supply currents/voltages instead of fast changing APFs currents/voltages, thereby reducing the computational delay. Moreover, no extra control is required for neutral source current compensation; hence the numbers of current sensors are reduced. The performance of the proposed topology of UPQC is analyzed through simulations results using MATLAB software with its Simulink and Power System Block set toolboxes.Keywords: Power-factor correction, Load balancing, UPQC, Voltage and Current harmonics, Neutral current mitigation, Starhexagon transformer.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2334650 Quasi Multi-Pulse Back-to-Back Static Synchronous Compensator Employing Line Frequency Switching 2-Level GTO Inverters
Authors: A.M. Vural, K.C. Bayindir
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Back-to-back static synchronous compensator (BtBSTATCOM) consists of two back-to-back voltage-source converters (VSC) with a common DC link in a substation. This configuration extends the capabilities of conventional STATCOM that bidirectional active power transfer from one bus to another is possible. In this paper, VSCs are designed in quasi multi-pulse form in which GTOs are triggered only once per cycle in PSCAD/EMTDC. The design details of VSCs as well as gate switching circuits and controllers are fully represented. Regulation modes of BtBSTATCOM are verified and tested on a multi-machine power system through different simulation cases. The results presented in the form of typical time responses show that practical PI controllers are almost robust and stable in case of start-up, set-point change, and line faults.
Keywords: Flexible AC Transmission Systems (FACTS), Backto-Back Static Synchronous Compensator (BtB-STATCOM), quasi multi-pulse voltage source converter, active power transfer; voltage control.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2155649 Evaluation of the Power Generation Effect Obtained by Inserting a Piezoelectric Sheet in the Backlash Clearance of a Circular Arc Helical Gear
Authors: Barenten Suciu, Yuya Nakamoto
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Power generation effect, obtained by inserting a piezo- electric sheet in the backlash clearance of a circular arc helical gear, is evaluated. Such type of screw gear is preferred since, in comparison with the involute tooth profile, the circular arc profile leads to reduced stress-concentration effects, and improved life of the piezoelectric film. Firstly, geometry of the circular arc helical gear, and properties of the piezoelectric sheet are presented. Then, description of the test-rig, consisted of a right-hand thread gear meshing with a left-hand thread gear, and the voltage measurement procedure are given. After creating the tridimensional (3D) model of the meshing gears in SolidWorks, they are 3D-printed in acrylonitrile butadiene styrene (ABS) resin. Variation of the generated voltage versus time, during a meshing cycle of the circular arc helical gear, is measured for various values of the center distance. Then, the change of the maximal, minimal, and peak-to-peak voltage versus the center distance is illustrated. Optimal center distance of the gear, to achieve voltage maximization, is found and its significance is discussed. Such results prove that the contact pressure of the meshing gears can be measured, and also, the electrical power can be generated by employing the proposed technique.
Keywords: Power generation, circular arc helical gear, piezo- electric sheet, contact problem, optimal center distance.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 733648 Force on a High Voltage Capacitor with Asymmetrical Electrodes
Authors: Jiří Primas, Michal Malík, Darina Jašíková, Václav Kopecký
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When a high DC voltage is applied to a capacitor with strongly asymmetrical electrodes, it generates a mechanical force that affects the whole capacitor. This phenomenon is most likely to be caused by the motion of ions generated around the smaller of the two electrodes and their subsequent interaction with the surrounding medium. A method to measure this force has been devised and used. A formula describing the force has also been derived. After comparing the data gained through experiments with those acquired using the theoretical formula, a difference was found above a certain value of current. This paper also gives reasons for this difference.Keywords: Capacitor with asymmetrical electrodes, Electricalfield, Mechanical force, Motion of ions.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1981647 Understanding Charge Dynamics in Elastomers Adopting Pulsed Electro Acoustic (PEA) Technique
Authors: R. Sarathi, M. G. Danikas, Y. Chen, T. Tanaka
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In the present work, Pulsed Electro Acoustic (PEA) technique was adopted to understand the space charge dynamics in elastomeric material. It is observed that the polarity of the applied DC voltage voltage and its magnitude alters the space charge dynamics in insulation structure. It is also noticed that any addition of compound to the base material/processing technique have characteristic variation in the space charge injection process. It could be concluded based on the present work that the plasticizer could inject heterocharges into the insulation medium. Also it is realized that space charge magnitude is less with the addition of plasticizer. In the PEA studies, it is observed that local electric field in the insulating material can be much more than applied electric field due to space charge formation. One of the important conclusions arrived at based on PEA technique is that one could understand the safe operating electric field of an insulation material and the charge trap sites.Keywords: Pulsed electro acoustic technique, space charge, DCvoltage, elastomers, Electric field, high voltage.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1451646 A Direct Down-conversion Receiver for Low-power Wireless Sensor Networks
Authors: Gianluca Cornetta, Abdellah Touhafi, David J. Santos, Jose Manuel Vazquez
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A direct downconversion receiver implemented in 0.13 μm 1P8M process is presented. The circuit is formed by a single-end LNA, an active balun for conversion into balanced mode, a quadrature double-balanced passive switch mixer and a quadrature voltage-controlled oscillator. The receiver operates in the 2.4 GHz ISM band and complies with IEEE 802.15.4 (ZigBee) specifications. The circuit exhibits a very low noise figure of only 2.27 dB and dissipates only 14.6 mW with a 1.2 V supply voltage and is hence suitable for low-power applications.
Keywords: LNA, Active Balun, Passive Mixer, VCO, IEEE 802.15.4(ZigBee).
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2355645 Hysteresis Modulation Based Sliding Mode Control for Positive Output Elementary Super Lift Luo Converter
Authors: K. Ramash Kumar, S. Jeevananthan
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The Object of this paper is to design and analyze a Hysteresis modulation based sliding mode control (HMSMC) for positive output elementary super lift Luo converter (POESLLC), which is the start-of-the-art DC-DC converter. The positive output elementary super lift Luo converter performs the voltage conversion from positive source voltage to positive load voltage. This paper proposes a HMSMC capable of providing the good steady state and dynamic performance compared to conventional controllers. Dynamic equations describing the positive output elementary super lift luo converter are derived by using state space average method. The simulation model of the positive output elementary super lift Luo converter with its control circuit is implemented in Matlab/Simulink. The HMSMC for positive output elementary super lift Luo converter is tested for line changes, load changes and also for components variations.Keywords: DC-DC converter, Positive output elementarysuper lift Luo converter (POESLLC), Hysteresis modulation basedsliding mode control (HMSMC).
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2254644 Hybrid Pulse Width Modulation Techniques for the Reduction of Switching Losses and Voltage Harmonics in Cascaded Multilevel Inverters
Authors: Venkata Reddy Kota
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These days, the industrial trend is moving away from heavy and bulky passive components to power converter systems that use more and more semiconductor elements. Also, it is difficult to connect the traditional converters to the high and medium voltage. For these reasons, a new family of multilevel inverters has appeared as a solution for working with higher voltage levels. Different modulation topologies like Sinusoidal Pulse Width Modulation (SPWM), Selective Harmonic Elimination Pulse Width Modulation (SHE-PWM) are available for multilevel inverters. In this work, different hybrid modulation techniques which are combination of fundamental frequency modulation and multilevel sinusoidal-modulation are compared. The main characteristic of these modulations are reduction of switching losses with good harmonic performance and balanced power loss dissipation among the device. The proposed hybrid modulation schemes are developed and simulated in Matlab/Simulink for cascaded H-bridge inverter. The results validate the applicability of the proposed schemes for cascaded multilevel inverter.
Keywords: Hybrid PWM techniques, Cascaded Multilevel Inverters, Switching loss minimization.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1993643 Analysis and Circuit Modeling of APDs
Authors: A. Ahadpour Shal, A. Ghadimi, A. Azadbar
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In this paper a new method for increasing the speed of SAGCM-APD is proposed. Utilizing carrier rate equations in different regions of the structure, a circuit model for the structure is obtained. In this research, in addition to frequency response, the effect of added new charge layer on some transient parameters like slew-rate, rising and falling times have been considered. Finally, by trading-off among some physical parameters such as different layers widths and droppings, a noticeable decrease in breakdown voltage has been achieved. The results of simulation, illustrate some features of proposed structure improvement in comparison with conventional SAGCM-APD structures.Keywords: Optical communication systems (OCS), Circuit modeling, breakdown voltage, SAGCM APD
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2073642 Electrical Field Around the Overhead Transmission Lines
Authors: S.S. Razavipour, M. Jahangiri, H. Sadeghipoor
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In this paper, the computation of the electrical field distribution around AC high-voltage lines is demonstrated. The advantages and disadvantages of two different methods are described to evaluate the electrical field quantity. The first method is a seminumerical method using the laws of electrostatic techniques to simulate the two-dimensional electric field under the high-voltage overhead line. The second method which will be discussed is the finite element method (FEM) using specific boundary conditions to compute the two- dimensional electric field distributions in an efficient way.
Keywords: Electrical field, unloaded transmission lines, finite element method, electrostatic images technique.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 8376641 A Digital Pulse-Width Modulation Controller for High-Temperature DC-DC Power Conversion Application
Authors: Jingjing Lan, Jun Yu, Muthukumaraswamy Annamalai Arasu
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This paper presents a digital non-linear pulse-width modulation (PWM) controller in a high-voltage (HV) buck-boost DC-DC converter for the piezoelectric transducer of the down-hole acoustic telemetry system. The proposed design controls the generation of output signal with voltage higher than the supply voltage and is targeted to work under high temperature. To minimize the power consumption and silicon area, a simple and efficient design scheme is employed to develop the PWM controller. The proposed PWM controller consists of serial to parallel (S2P) converter, data assign block, a mode and duty cycle controller (MDC), linearly PWM (LPWM) and noise shaper, pulse generator and clock generator. To improve the reliability of circuit operation at higher temperature, this design is fabricated with the 1.0-μm silicon-on-insulator (SOI) CMOS process. The implementation results validated that the proposed design has the advantages of smaller size, lower power consumption and robust thermal stability.
Keywords: DC-DC power conversion, digital control, high temperatures, pulse-width modulation.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1716640 Design a Low Voltage- Low Offset Class AB Op-Amp
Authors: B.Gholami, S.Gholami, A.Forouzantabar, Sh.Bazyari
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A new design approach for three-stage operational amplifiers (op-amps) is proposed. It allows to actually implement a symmetrical push-pull class-AB amplifier output stage for wellestablished three-stage amplifiers using a feedforward transconductance stage. Compared with the conventional design practice, the proposed approach leads to a significant improvement of the symmetry between the positive and the negative op-amp step response, resulting in similar values of the positive/negative settling time. The new approach proves to be very useful in order to fully exploit the potentiality allowed by the op-amp in terms of speed performances. Design examples in a commercial 0.35-μm CMOS prove the effectiveness of theproposed strategy.Keywords: Low-voltage op amp, design , optimum design
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3582639 Artificial Accelerated Ageing Test of 22 kVXLPE Cable for Distribution System Applications in Thailand
Authors: A. Rawangpai, B. Maraungsri, N. Chomnawang
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This paper presents the experimental results on artificial ageing test of 22 kV XLPE cable for distribution system application in Thailand. XLPE insulating material of 22 kV cable was sliced to 60-70 μm in thick and was subjected to ac high voltage at 23 Ôùª C, 60 Ôùª C and 75 Ôùª C. Testing voltage was constantly applied to the specimen until breakdown. Breakdown voltage and time to breakdown were used to evaluate life time of insulating material. Furthermore, the physical model by J. P. Crine for predicts life time of XLPE insulating material was adopted as life time model and was calculated in order to compare the experimental results. Acceptable life time results were obtained from Crine-s model comparing with the experimental result. In addition, fourier transform infrared spectroscopy (FTIR) for chemical analysis and scanning electron microscope (SEM) for physical analysis were conducted on tested specimens.Keywords: Artificial accelerated ageing test, XLPE cable, distribution system, insulating material, life time, life time model
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3682638 Transimpedance Amplifier for Integrated 3D Ultrasound Biomicroscope Applications
Authors: Xiwei Huang, Hyouk-Kyu Cha, Dongning Zhao, Bin Guo, Minkyu Je, Hao Yu
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This paper presents the design and implementation of a fully integrated transimpedance amplifier (TIA) as the analog frontend receiver for Capacitive Micromachined Ultrasound Transducers (CMUTs) for ultrasound biomicroscope imaging application. The amplifier is designed to amplify the received signals from 17.5MHz to 52.5MHz with a center frequency of 35MHz. The TIA was fabricated in GF 0.18μm 1P6M 30V high voltage process. The measurement results show that the designed amplifier can reach a transimpedance gain of 61.08dBΩ and operating frequency from 17.5MHz to 100MHz with 1VP-P output voltage under 6V power supply.
Keywords: 3D ultrasound biomicroscope, analog front-end, transimpedance amplifier, CMUT
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2726637 An Improved Performance of the SRM Drives Using Z-Source Inverter with the Simplified Fuzzy Logic Rule Base
Authors: M. Hari Prabhu
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This paper is based on the performance of the Switched Reluctance Motor (SRM) drives using Z-Source Inverter with the simplified rule base of Fuzzy Logic Controller (FLC) with the output scaling factor (SF) self-tuning mechanism are proposed. The aim of this paper is to simplify the program complexity of the controller by reducing the number of fuzzy sets of the membership functions (MFs) without losing the system performance and stability via the adjustable controller gain. ZSI exhibits both voltage-buck and voltage-boost capability. It reduces line harmonics, improves reliability, and extends output voltage range. The output SF of the controller can be tuned continuously by a gain updating factor, whose value is derived from fuzzy logic, with the plant error and error change ratio as input variables. Then the results, carried out on a four-phase 6/8 pole SRM based on the dSPACEDS1104 platform, to show the feasibility and effectiveness of the devised methods and also performance of the proposed controllers will be compared with conventional counterpart.
Keywords: Fuzzy logic controller, scaling factor (SF), switched reluctance motor (SRM), variable-speed drives.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2432636 Modification of Electrical and Switching Characteristics of a Non Punch-Through Insulated Gate Bipolar Transistor by Gamma Irradiation
Authors: Hani Baek, Gwang Min Sun, Chansun Shin, Sung Ho Ahn
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Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO2 interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.Keywords: NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 878635 Impact of Increasing Distributed Solar PV Systems on Distribution Networks in South Africa
Authors: Aradhna Pandarum
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South Africa is experiencing an exponential growth of distributed solar PV installations. This is due to various factors with the predominant one being increasing electricity tariffs along with decreasing installation costs, resulting in attractive business cases to some end-users. Despite there being a variety of economic and environmental advantages associated with the installation of PV, their potential impact on distribution grids has yet to be thoroughly investigated. This is especially true since the locations of these units cannot be controlled by Network Service Providers (NSPs) and their output power is stochastic and non-dispatchable. This report details two case studies that were completed to determine the possible voltage and technical losses impact of increasing PV penetration in the Northern Cape of South Africa. Some major impacts considered for the simulations were ramping of PV generation due to intermittency caused by moving clouds, the size and overall hosting capacity and the location of the systems. The main finding is that the technical impact is different on a constrained feeder vs a non-constrained feeder. The acceptable PV penetration level is much lower for a constrained feeder than a non-constrained feeder, depending on where the systems are located.
Keywords: Medium voltage networks, power system losses, power system voltage, solar photovoltaic, PV.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 563634 Design and Study of a DC/DC Converter for High Power, 14.4 V and 300 A for Automotive Applications
Authors: Julio Cesar Lopes de Oliveira, Carlos Henrique Gonc¸alves Treviso
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The shortage of the automotive market in relation to options for sources of high power car audio systems, led to development of this work. Thus, we developed a source with stabilized voltage with 4320 W effective power. Designed to the voltage of 14.4 V and a choice of two currents: 30 A load option in battery banks and 300 A at full load. This source can also be considered as a source of general use dedicated commercial with a simple control circuit in analog form based on discrete components. The assembly of power circuit uses a methodology for higher power than the initially stipulated.
Keywords: DC-DC power converters, converters, power convertion, pulse width modulation converters.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2911633 Oil Palm Empty Fruit Bunch as a New Organic Filler for Electrical Tree Inhibition
Authors: M. H. Ahmad, A. A. A. Jamil, H. Ahmad, M. A. M. Piah, A. Darus, Y. Z. Arief, N. Bashir
Abstract:
The use of synthetic retardants in polymeric insulated cables is not uncommon in the high voltage engineering to study electrical treeing phenomenon. However few studies on organic materials for the same investigation have been carried. .This paper describes the study on the effects of Oil Palm Empty Fruit Bunch (OPEFB) microfiller on the tree initiation and propagation in silicone rubber with different weight percentages (wt %) of filler to insulation bulk material. The weight percentages used were 0 wt % and 1 wt % respectively. It was found that the OPEFB retards the propagation of the electrical treeing development. For tree inception study, the addition of 1(wt %) OPEFB has increase the tree inception voltage of silicone rubber. So, OPEFB is a potential retardant to the initiation and growth of electrical treeing occurring in polymeric materials for high voltage application. However more studies on the effects of physical and electrical properties of OPEFB as a tree retardant material are required.Keywords: Oil palm empty fruit bunch, electrical tree, siliconerubber, fillers.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2366632 Study on the Addition of Solar Generating and Energy Storage Units to a Power Distribution System
Authors: T. Costa, D. Narvaez, K. Melo, M. Villalva
Abstract:
Installation of micro-generators based on renewable energy in power distribution system has increased in recent years, with the main renewable sources being solar and wind. Due to the intermittent nature of renewable energy sources, such micro-generators produce time-varying energy which does not correspond at certain times of the day to the peak energy consumption of end users. For this reason, the use of energy storage units next to the grid contributes to the proper leveling of the buses’ voltage level according to Brazilian energy quality standards. In this work, the effect of the addition of a photovoltaic solar generator and a store of energy in the busbar voltages of an electric system is analyzed. The consumption profile is defined as the average hourly use of appliances in a common residence, and the generation profile is defined as a function of the solar irradiation available in a locality. The power summation method is validated with analytical calculation and is used to calculate the modules and angles of the voltages in the buses of an electrical system based on the IEEE standard, at each hour of the day and with defined load and generation profiles. The results show that bus 5 presents the worst voltage level at the power consumption peaks and stabilizes at the appropriate range with the inclusion of the energy storage during the night time period. Solar generator maintains improvement of the voltage level during the period when it receives solar irradiation, having peaks of production during the 12 pm (without exceeding the appropriate maximum levels of tension).
Keywords: Energy storage, power distribution system, solar generator, voltage level.
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