Search results for: Semiconductor switch
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 270

Search results for: Semiconductor switch

180 Blackout on Outdoor Light

Authors: A. Castillo, A. Gutiérrez, J.M. Gutiérrez, J.M. Gómez, E. García-López

Abstract:

The continued growth of the cities is causing an increase of the amount of surface to illuminate. However, this rise into lighting brings some unintended consequences such as increased of energy consumption or the light pollution. To make these effects less intrusive as possible some councils have chosen to perform a part-night lighting in some areas. Nonetheless, this kind of shutdown may cause serious problems which we intend to highlight in this paper.

Keywords: Energy saving, part-night lighting, switch off, vial security

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179 Supervisory Controller with Three-State Energy Saving Mode for Induction Motor in Fluid Transportation

Authors: O. S. Ebrahim, K. O. Shawky, M. O. Ebrahim, P. K. Jain

Abstract:

Induction Motor (IM) driving pump is the main consumer of electricity in a typical fluid transportation system (FTS). Changing the connection of the stator windings from delta to star at no load can achieve noticeable active and reactive energy savings. This paper proposes a supervisory hysteresis liquid-level control with three-state energy saving mode (ESM) for IM in FTS including storage tank. The IM pump drive comprises modified star/delta switch and hydromantic coupler. Three-state ESM is defined, along with the normal running, and named analog to computer ESMs as follows: Sleeping mode in which the motor runs at no load with delta stator connection, hibernate mode in which the motor runs at no load with a star connection, and motor shutdown is the third energy saver mode. A logic flow-chart is synthesized to select the motor state at no-load for best energetic cost reduction, considering the motor thermal capacity used. An artificial neural network (ANN) state estimator, based on the recurrent architecture, is constructed and learned in order to provide fault-tolerant capability for the supervisory controller. Sequential test of Wald is used for sensor fault detection. Theoretical analysis, preliminary experimental testing and, computer simulations are performed to show the effectiveness of the proposed control in terms of reliability, power quality and energy/coenergy cost reduction with the suggestion of power factor correction.

Keywords: Artificial Neural Network, ANN, Energy Saving Mode, ESM, Induction Motor, IM, star/delta switch, supervisory control, fluid transportation, reliability, power quality.

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178 Graphene Based Electronic Device

Authors: Ali Safari, Pejman Hosseiniun, Iman Rahbari, Mohamad Reza Kalhor

Abstract:

The semiconductor industry is placing an increased emphasis on emerging materials and devices that may provide improved performance, or provide novel functionality for devices. Recently, graphene, as a true two-dimensional carbon material, has shown fascinating applications in electronics. In this paper detailed discussions are introduced for possible applications of grapheme Transistor in RF and digital devices.

Keywords: Graphene, GFET, RF, Digital.

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177 Quasi-ballistic Transport in Submicron Hg0.8Cd0.2Te Diodes: Hydrodynamic Modeling

Authors: M. Daoudi, A. Belghachi, L. Varani

Abstract:

In this paper, we analyze the problem of quasiballistic electron transport in ultra small of mercury -cadmiumtelluride (Hg0.8Cd0.2Te -MCT) n+-n- n+ devices from hydrodynamic point view. From our study, we note that, when the size of the active layer is low than 0.1μm and for low bias application( ( ≥ 9mV), the quasi-ballistic transport has an important effect.

Keywords: Hg0.8Cd0.2Te semiconductor, Hydrodynamicmode, Quasi-ballistic transport, Submicron diode

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176 A Modern Review of the Spintronic Technology: Fundamentals, Materials, Devices, Circuits, Challenges, and Current Research Trends

Authors: Muhibul Haque Bhuyan

Abstract:

Spintronic, also termed spin electronics or spin transport electronics, is a kind of new technology, which exploits the two fundamental degrees of freedom- spin-state and charge-state of electrons to enhance the operational speed for the data storage and transfer efficiency of the device. Thus, it seems an encouraging technology to combat most of the prevailing complications in orthodox electron-based devices. This novel technology possesses the capacity to mix the semiconductor microelectronics and magnetic devices’ functionalities into one integrated circuit. Traditional semiconductor microelectronic devices use only the electronic charge to process the information based on binary numbers, 0 and 1. Due to the incessant shrinking of the transistor size, we are reaching the final limit of 1 nm or so. At this stage, the fabrication and other device operational processes will become challenging as the quantum effect comes into play. In this situation, we should find an alternative future technology, and spintronic may be such technology to transfer and store information. This review article provides a detailed discussion of the spintronic technology: fundamentals, materials, devices, circuits, challenges, and current research trends. At first, the fundamentals of spintronics technology are discussed. Then types, properties, and other issues of the spintronic materials are presented. After that, fabrication and working principles, as well as application areas and advantages/disadvantages of spintronic devices and circuits, are explained. Finally, the current challenges, current research areas, and prospects of spintronic technology are highlighted. This is a new paradigm of electronic cum magnetic devices built on the charge and spin of the electrons. Modern engineering and technological advances in search of new materials for this technology give us hope that this would be a very optimistic technology in the upcoming days.

Keywords: Spintronic technology, spin, charge, magnetic devices, spintronic devices, spintronic materials.

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175 Mathematical Modeling of the AMCs Cross-Contamination Removal in the FOUPs: Finite Element Formulation and Application in FOUP’s Decontamination

Authors: N. Santatriniaina, J. Deseure, T.Q. Nguyen, H. Fontaine, C. Beitia, L. Rakotomanana

Abstract:

Nowadays, with the increasing of the wafer's size and the decreasing of critical size of integrated circuit manufacturing in modern high-tech, microelectronics industry needs a maximum attention to challenge the contamination control. The move to 300 [mm] is accompanied by the use of Front Opening Unified Pods for wafer and his storage. In these pods an airborne cross contamination may occur between wafers and the pods. A predictive approach using modeling and computational methods is very powerful method to understand and qualify the AMCs cross contamination processes. This work investigates the required numerical tools which are employed in order to study the AMCs cross-contamination transfer phenomena between wafers and FOUPs. Numerical optimization and finite element formulation in transient analysis were established. Analytical solution of one dimensional problem was developed and the calibration process of physical constants was performed. The least square distance between the model (analytical 1D solution) and the experimental data are minimized. The behavior of the AMCs intransient analysis was determined. The model framework preserves the classical forms of the diffusion and convection-diffusion equations and yields to consistent form of the Fick's law. The adsorption process and the surface roughness effect were also traduced as a boundary condition using the switch condition Dirichlet to Neumann and the interface condition. The methodology is applied, first using the optimization methods with analytical solution to define physical constants, and second using finite element method including adsorption kinetic and the switch of Dirichlet to Neumann condition.

Keywords: AMCs, FOUP, cross-contamination, adsorption, diffusion, numerical analysis, wafers, Dirichlet to Neumann, finite elements methods, Fick’s law, optimization.

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174 Realization of Fractional-Order Capacitors with Field-Effect Transistors

Authors: Steve Hung-Lung Tu, Yu-Hsuan Cheng

Abstract:

A novel and efficient approach to realize fractional-order capacitors is investigated in this paper. Meanwhile, a new approach which is more efficient for semiconductor implementation of fractional-order capacitors is proposed. The feasibility of the approach has been verified with the preliminary measured results.

Keywords: Fractional-order, field-effect transistors, RC transmission lines.

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173 Next Generation Networks and Their Relation with Ad-hoc Networks

Authors: Hamid Barati, Ali Movaghar, Ali Barati, Arash Azizi Mazreah , Ehsan Shahsavari Gogheri, Faranak Mohsenzadeh

Abstract:

The communication networks development and advancement during two last decades has been toward a single goal and that is gradual change from circuit-switched networks to packed switched ones. Today a lot of networks operates are trying to transform the public telephone networks to multipurpose packed switch. This new achievement is generally called "next generation networks". In fact, the next generation networks enable the operators to transfer every kind of services (sound, data and video) on a network. First, in this report the definition, characteristics and next generation networks services and then ad-hoc networks role in the next generation networks are studied.

Keywords: NGNs services, Ad-hoc Networks, NGN.

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172 Photoluminescence Properties of β-FeSi2 on Cu- or Au-coated Si

Authors: Kensuke Akiyama, Satoru Kaneko, Takeshi Ozawa, Kazuya Yokomizo, Masaru Itakura

Abstract:

The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi2 has attracted a noticeable interest for silicon-based optoelectronic applications. Moreover, its high optical absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this semiconducting material to be used as photovoltanics devices. A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative center was formed on a Cu- or Au- reated Si layer. This method of deposition can be applied to other materials requiring high crystal quality.

Keywords: iron silicide, semiconductor, epitaxial, photoluminescence.

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171 Novel Design of Quantum Dot Arrays to Enhance Near-Fields Excitation Resonances

Authors: N. H. Ismail, A. A. A. Nassar, K. H. Baz

Abstract:

Semiconductor crystals smaller than about 10 nm, known as quantum dots, have properties that differ from large samples, including a band gap that becomes larger for smaller particles. These properties create several applications for quantum dots. In this paper new shapes of quantum dot arrays are used to enhance the photo physical properties of gold nano-particles. This paper presents a study of the effect of nano-particles shape, array, and size on their absorption characteristics.

Keywords: Quantum Dots, Nano-Particles, LSPR.

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170 A Proposal for Federation Technology for Authenticated Information between Terminals

Authors: Katsuyuki Umezawa, Takashi Tashiro, Satoru Tezuka

Abstract:

Recently, various services such as television and the Internet have come to be received through various terminals. However, we could gain greater convenience by receiving these services through cellular phone terminals when we go out and then continuing to receive the same services through a large screen digital television after we have come home. However, it is necessary to go through the same authentication processing again when using TVs after we have come home. In this study, we have developed an authentication method that enables users to switch terminals in environments in which the user receives service from a server through a terminal. Specifically, the method simplifies the authentication of the server side when switching from one terminal to another terminal by using previously authenticated information.

Keywords: Authentication, Cookie, Federation, GBA, IPSec

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169 Switching Behaviors of HfO2/NiSix Based RRAM

Authors: Z. X. Chen, Z. Fang, X. P. Wang, G. -Q. Lo, D. -L. Kwong, Y. H. Wu

Abstract:

This paper presents a study of Ni-silicides as the bottom electrode of HfO2-based RRAM. Various silicidation conditions were used to obtain different Ni concentrations within the Ni-silicide bottom electrode, namely Ni2Si, NiSi, and NiSi2. A 10nm HfO2 switching material and 50nm TiN top electrode was then deposited and etched into 500nm by 500nm square RRAM cells. Cell performance of the Ni2Si and NiSi cells were good, while the NiSi2 cell could not switch reliably, indicating that the presence of Ni in the bottom electrode is important for good switching.

Keywords: HfO2-based, Ni-silicide, NiSi, resistive RAM (RRAM).

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168 A Direct Down-conversion Receiver for Low-power Wireless Sensor Networks

Authors: Gianluca Cornetta, Abdellah Touhafi, David J. Santos, Jose Manuel Vazquez

Abstract:

A direct downconversion receiver implemented in 0.13 μm 1P8M process is presented. The circuit is formed by a single-end LNA, an active balun for conversion into balanced mode, a quadrature double-balanced passive switch mixer and a quadrature voltage-controlled oscillator. The receiver operates in the 2.4 GHz ISM band and complies with IEEE 802.15.4 (ZigBee) specifications. The circuit exhibits a very low noise figure of only 2.27 dB and dissipates only 14.6 mW with a 1.2 V supply voltage and is hence suitable for low-power applications.

Keywords: LNA, Active Balun, Passive Mixer, VCO, IEEE 802.15.4(ZigBee).

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167 A 1.5V,100MS/s,12-bit Current-Mode CMOSS ample-and-Hold Circuit

Authors: O. Hashemipour, S. G. Nabavi

Abstract:

A high-linearity and high-speed current-mode sampleand- hold circuit is designed and simulated using a 0.25μm CMOS technology. This circuit design is based on low voltage and it utilizes a fully differential circuit. Due to the use of only two switches the switch related noise has been reduced. Signal - dependent -error is completely eliminated by a new zero voltage switching technique. The circuit has a linearity error equal to ±0.05μa, i.e. 12-bit accuracy with a ±160 μa differential output - input signal frequency of 5MHZ, and sampling frequency of 100 MHZ. Third harmonic is equal to –78dB.

Keywords: Zero-voltage-technique, MOS-resistor, OTA, Feedback-resistor.

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166 Synthesis and Characterization of ZnO and Fe3O4 Nanocrystals from Oleat-based Organometallic Compounds

Authors: PoiSim Khiew, WeeSiong Chiu, ThianKhoonTan, Shahidan Radiman, Roslan Abd-Shukor, Muhammad Azmi Abd-Hamid, ChinHua Chia

Abstract:

Magnetic and semiconductor nanomaterials exhibit novel magnetic and optical properties owing to their unique size and shape-dependent effects. With shrinking the size down to nanoscale region, various anomalous properties that normally not present in bulk start to dominate. Ability in harnessing of these anomalous properties for the design of various advance electronic devices is strictly dependent on synthetic strategies. Hence, current research has focused on developing a rational synthetic control to produce high quality nanocrystals by using organometallic approach to tune both size and shape of the nanomaterials. In order to elucidate the growth mechanism, transmission electron microscopy was employed as a powerful tool in performing real time-resolved morphologies and structural characterization of magnetic (Fe3O4) and semiconductor (ZnO) nanocrystals. The current synthetic approach is found able to produce nanostructures with well-defined shapes. We have found that oleic acid is an effective capping ligand in preparing oxide-based nanostructures without any agglomerations, even at high temperature. The oleate-based precursors and capping ligands are fatty acid compounds, which are respectively originated from natural palm oil with low toxicity. In comparison with other synthetic approaches in producing nanostructures, current synthetic method offers an effective route to produce oxide-based nanomaterials with well-defined shapes and good monodispersity. The nanocystals are well-separated with each other without any stacking effect. In addition, the as-synthesized nanopellets are stable in terms of chemically and physically if compared to those nanomaterials that are previous reported. Further development and extension of current synthetic strategy are being pursued to combine both of these materials into nanocomposite form that will be used as “smart magnetic nanophotocatalyst" for industry waste water treatment.

Keywords: Metal oxide nanomaterials, Nanophotocatalyst, Organometallic synthesis, Morphology Control

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165 Fabrication and Study of Nickel Phthalocyanine based Surface Type Capacitive Sensors

Authors: Mutabar Shah, Muhammad Hassan Sayyad, Khasan S. Karimov

Abstract:

Thin films of Nickel phthalocynine (NiPc) of different thicknesses (100, 150 and 200 nm) were deposited by thermal evaporator on glass substrates with preliminary deposited aluminum electrodes to form Al/NiPc/Al surface-type capacitive humidity sensors. The capacitance-humidity relationships of the sensors were investigated at humidity levels from 35 to 90% RH. It was observed that the capacitance value increases nonlinearly with increasing humidity level. All measurements were taken at room temperature.

Keywords: Capacitive sensor, Humidity, Nickel phthalocyanine, Organic semiconductor.

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164 Numerical Calculation of the Ionization Energy of Donors in a Cubic Quantum well and Wire

Authors: Sara Sedaghat, Mahmood Barati, Iraj Kazeminezhad

Abstract:

The ionization energy in semiconductor systems in nano scale was investigated by using effective mass approximation. By introducing the Hamiltonian of the system, the variational technique was employed to calculate the ground state and the ionization energy of a donor at the center and in the case that the impurities are randomly distributed inside a cubic quantum well. The numerical results for GaAs/GaAlAs show that the ionization energy strongly depends on the well width for both cases and it decreases as the well width increases. The ionization energy of a quantum wire was also calculated and compared with the results for the well.

Keywords: quantum well, quantum wire, quantum dot, impuritystate

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163 Study of Parameters Affecting the Electrostatic Attractions Force

Authors: Vahid Sabermand, Yousef Hojjat, Majid Hasanzadeh

Abstract:

This paper contains 2 main parts. In the first part of paper we simulated and studied three types of electrode patterns used in various industries for suspension and handling of the semiconductor and glass and we selected the best pattern by evaluating the electrostatic force, which was comb pattern electrode. In the second part we investigated the parameters affecting the amount of electrostatic force such as the gap between surface and electrode (g), the electrode width (w), the gap between electrodes (t), the surface permittivity and electrode length and methods of improvement of adhesion force by changing these values.

Keywords: Electrostatic force, electrostatic adhesion, electrostatic chuck, electrostatic application in industry, Electroadhesive grippers.

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162 Working Mode and Key Technology of Thermal Vacuum Test Software for Spacecraft Test

Authors: Zhang Lei, Zhan Haiyang, Gu Miao

Abstract:

A universal software platform is developed for improving the defects in the practical one. This software platform has distinct advantages in modularization, information management, and the interfaces. Several technologies such as computer technology, virtualization technology, network technology, etc. are combined together in this software platform, and four working modes are introduced in this article including single mode, distributed mode, cloud mode, and the centralized mode. The application area of the software platform is extended through the switch between these working modes. The software platform can arrange the thermal vacuum test process automatically. This function can improve the reliability of thermal vacuum test.

Keywords: Software platform, thermal vacuum test, control and measurement, work mode.

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161 Wafer Fab Operational Cost Monitoring and Controlling with Cost per Equivalent Wafer Out

Authors: Ian Kree, Davina Chin Lee Yien

Abstract:

This paper presents Cost per Equivalent Wafer Out, which we find useful in wafer fab operational cost monitoring and controlling. It removes the loading and product mix effect in the cost variance analysis. The operation heads, therefore, could immediately focus on identifying areas for cost improvement. Without this, they would have to measure the impact of the loading variance and product mix variance between actual and budgeted prior to make any decision on cost improvement. Cost per Equivalent Wafer Out, thereby, increases efficiency in wafer fab operational cost monitoring and controlling.

Keywords: Cost Control, Cost Variance, Operational Expenditure, Semiconductor.

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160 Design an Electrical Nose with ZnO Nanowire Arrays

Authors: Amin Nekoubin, Abdolamir Nekoubin

Abstract:

Vertical ZnO nanowire array films were synthesized based on aqueous method for sensing applications. ZnO nanowires were investigated structurally using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The gas-sensing properties of ZnO nanowires array films are studied. It is found that the ZnO nanowires array film sensor exhibits excellent sensing properties towards O2 and CO2 at 100 °C with the response time shorter than 5 s. High surface area / volume ratio of vertical ZnO nanowire and high mobility accounts for the fast response and recovery. The sensor response was measured in the range from 100 to 500 ppm O2 and CO2 in this study.

Keywords: Gas sensor, semiconductor, ZnO, Nanowire array

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159 Speedup of Data Vortex Network Architecture

Authors: Qimin Yang

Abstract:

In this paper, 3X3 routing nodes are proposed to provide speedup and parallel processing capability in Data Vortex network architectures. The new design not only significantly improves network throughput and latency, but also eliminates the need for distributive traffic control mechanism originally embedded among nodes and the need for nodal buffering. The cost effectiveness is studied by a comparison study with the previously proposed 2- input buffered networks, and considerable performance enhancement can be achieved with similar or lower cost of hardware. Unlike previous implementation, the network leaves small probability of contention, therefore, the packet drop rate must be kept low for such implementation to be feasible and attractive, and it can be achieved with proper choice of operation conditions.

Keywords: Data Vortex, Packet Switch, Interconnection network, deflection, Network-on-chip

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158 Modeling and Simulation of PSM DC-DC Buck Converter

Authors: Ramamurthy S, Vanaja Ranjan P

Abstract:

A DC-to-DC converter for applications involving a source with widely varying voltage conditions with loads requiring constant voltage from full load down to no load is presented. The switching regulator considered is a Buck converter with Pulse Skipping Modulation control whereby pulses applied to the switch are blocked or released on output voltage crossing a predetermined value. Results of the study on the performance of regulator circuit are presented. The regulator regulates over a wide input voltage range with slightly higher ripple content and good transient response. Input current spectrum indicates a good EMI performance with crowding of components at low frequency range.

Keywords: DC/DC Converter, Pulse Skipping Modulation, Buckregulator, Modulation Factor, Electromagnetic Interference

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157 Energy Efficiency Testing of Fluorescent and WOLED (White Organic LED)

Authors: Hari Maghfiroh, Harry Prabowo

Abstract:

WOLED is widely used as lighting for high efficacy and little power consumption. In this research, power factor testing between WOLED and fluorescent lamp to see which one is more efficient in consuming energy. Since both lamps use semiconductor components, so calculation of the power factor need to consider the effects of harmonics. Harmonic make bigger losses. The study is conducted by comparing the value of the power factor regardless of harmonics (DPF) and also by included the harmonics (TPF). The average value of DPF of fluorescent is 0.953 while WOLED is 0.972. The average value of TPF of fluorescent is 0.717 whereas WOLED is 0.933. So from the review of power factor WOLED is more energy efficient than fluorescent lamp.

Keywords: Fluorescent, harmonic, power factor, WOLED.

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156 Japanese English in Travel Brochures

Authors: Premvadee Na Nakornpanom

Abstract:

This study investigates the role and impact of English loan words on Japanese language in travel brochures. The issues arising from a potential switch to English as a tool to absorb the West’s advanced knowledge and technology in the modernization of Japan to a means of linking Japan with the rest of the world and enhancing the country’s international presence. Sociolinguistic contexts was used to analyze data collected from the Nippon Travel agency "HIS"’s brochures in Thailand, revealing that English plays the most important role as lexical gap fillers and special effect givers. An increasing mixer of English to Japanese affects how English is misused, the way the Japanese see the world and the present generation’s communication gap.

Keywords: English, Japanese, loan words, travel brochure.

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155 A Single Switch High Step-Up DC/DC Converter with Zero Current Switching Condition

Authors: Rahil Samani, Saeed Soleimani, Ehsan Adib, Majid Pahlevani

Abstract:

This paper presents an inverting high step-up DC/DC converter. Basically, this high step-up DC/DC converter is an appealing interface for solar applications. The proposed topology takes advantage of using coupled inductors. Due to the leakage inductances of these coupled inductors, the power MOSFET has the zero current switching (ZCS) condition, which results in decreased switching losses. This will substantially improve the overall efficiency of the power converter. Furthermore, employing coupled inductors has led to a higher voltage gain. Theoretical analysis and experimental results of a 100W 20V/220V prototype are presented to verify the superior performance of the proposed DC/DC converter.

Keywords: Coupled inductors, high step-up DC/DC converter, zero-current switching, cuk converter, sepic converter.

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154 Reconfigurable Autonomous Mini Robot Design using CPLD's

Authors: Aditya K, Dinesh P, Ramesh Bhakthavatchalu

Abstract:

This paper explains a project based learning method where autonomous mini-robots are developed for research, education and entertainment purposes. In case of remote systems wireless sensors are developed in critical areas, which would collect data at specific time intervals, send the data to the central wireless node based on certain preferred information would make decisions to turn on or off a switch or control unit. Such information transfers hardly sums up to a few bytes and hence low data rates would suffice for such implementations. As a robot is a multidisciplinary platform, the interfacing issues involved are discussed in this paper. The paper is mainly focused on power supply, grounding and decoupling issues.

Keywords: CPLD, power supply, decoupling, grounding.

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153 Effect of Field Dielectric Material on Performance of InGaAs Power LDMOSFET

Authors: Yashvir Singh, Swati Chamoli

Abstract:

In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.

Keywords: InGaAs, dielectric, lateral, power MOSFET.

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152 Implementation and Simulation of Half-Bridge Series Resonant Inverter in Zero Voltage Switching

Authors: Buket Turan Azizoğlu

Abstract:

In switch mode power inverters, small sized inverters can be obtained by increasing the switching frequency. Switching frequency increment causes high driver losses. Also, high dt di and dt dv produced by the switching action creates high Electromagnetic Interference (EMI) and Radio Frequency Interference (RFI). In this paper, a series half bridge series resonant inverter circuit is simulated and evaluated practically to demonstrate the turn-on and turn-off conditions during zero or close to zero voltage switching. Also, the reverse recovery current effects of the body diode of the MOSFETs were investigated by operating above and below resonant frequency.

Keywords: Driver losses, Half Bridge series resonant inverter, Zero Voltage Switching

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151 Delay Specific Investigations on QoS Scheduling Schemes for Real-Time Traffic in Packet Switched Networks

Authors: P.S.Prakash, S.Selvan

Abstract:

Packet switched data network like Internet, which has traditionally supported throughput sensitive applications such as email and file transfer, is increasingly supporting delay-sensitive multimedia applications such as interactive video. These delaysensitive applications would often rather sacrifice some throughput for better delay. Unfortunately, the current packet switched network does not offer choices, but instead provides monolithic best-effort service to all applications. This paper evaluates Class Based Queuing (CBQ), Coordinated Earliest Deadline First (CEDF), Weighted Switch Deficit Round Robin (WSDRR) and RED-Boston scheduling schemes that is sensitive to delay bound expectations for variety of real time applications and an enhancement of WSDRR is proposed.

Keywords: QoS, Delay-sensitive, Queuing delay, Scheduling

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