Graphene Based Electronic Device

Authors: Ali Safari, Pejman Hosseiniun, Iman Rahbari, Mohamad Reza Kalhor

Abstract:

The semiconductor industry is placing an increased emphasis on emerging materials and devices that may provide improved performance, or provide novel functionality for devices. Recently, graphene, as a true two-dimensional carbon material, has shown fascinating applications in electronics. In this paper detailed discussions are introduced for possible applications of grapheme Transistor in RF and digital devices.

Keywords: Graphene, GFET, RF, Digital.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1094026

References:

[1] Novoselov KS, et al. Electric field effect in atomically thin carbon films. Science 2004;306(5696):666–9.
[2] Geim AK, The rise of graphene. Nat Mater 2007;6(3):183–91.
[3] Chen JH, , et al. Intrinsicand extrinsic performance limits of graphene devices onSiO2. Nat Nanotechnol 2008;3(4):206–9.
[4] Schwierz F. Graphene transistors. Nat Nanotechnol2010;5(7):487–96.
[5] Das Sarma S, Adam S, Hwang EH, Rossi E. Electronictransport in twodimensional graphene. Rev Mod Phys2011;83(2):407–70.
[6] Hwang C, Siegel DA, Mo SK, Regan W, Ismachet al. Fermi velocity engineering in graphene by substrate modification. Sci Rep 2012;2:590.
[7] Balandin AA, Ghosh S, Bao WZ, Calizo I, et al. Superior thermal conductivity of single-layergraphene. Nano Lett 2008;8(3):902–7.
[8] Lin YM, et al.Operation of graphene transistors at gigahertz frequencies. Nano Lett 2009;9(1):422–6.
[9] Wang ZX, Zhang ZY, Peng LM. Graphene-based ambipolar electronics for radio frequency applications. Chinese Sci Bull2012;57(23):2956–70.
[10] Liao L, Duan XF. Graphene for radio frequency electronics.Mat Today 2012;15(7–8):328–38.
[11] Wu YQ, Jenkins KA, Valdes-Garcia A, Farmer DB, et al. State-of-theart graphene high-frequency electronics. Nano Lett 2012;12(6):3062–7.
[12] Avouris P. Graphene: electronic and photonic properties anddevices. Nano Lett 2010;10(11):4285–94.
[13] Kim BJ, Jang H, Lee SK. High performance flexible graphene field effect transistors withion gel gate dielectrics. Nano Lett 2010;10(9):3464–6.
[14] Wang S, Ang PK, Wang ZQ, Tang A. Highmobility, printable, and solution-processed grapheme electronics. Nano Lett 2010;10(1):92–8.
[15] Sire C, et al. Flexible gigahertz transistors derived from solutionbased single-layer graphene. Nano Lett 2012;12(3):1184–8.
[16] Lu CC, Lin YC. High mobilityflexible graphene field-effect transistors with self-healinggate dielectrics. ACS Nano 2012;6(5):4469–74.
[17] Petrone N, MericI .Graphene field-effecttransistors with gigahertzfrequency power gain on flexiblesubstrates. Nano Lett 2013;13(1).
[18] Lee SK, et al .Stretchable graphene transistors with printed dielectrics and gate electrodes. Nano Lett 2011;11(11):4642–6.
[19] Yan C, Cho JH, Ahn JH. Graphene-based flexible and stretchable thin film transistors. Nanoscale 2012;4(16):4870–82.
[20] Sharma BK, et al. Load-controlled roll transfer of oxide transistors for stretchable electronics. AdvFunct Mater 2013;23(16):2024–32.
[21] F. Schedin, et al. "Detection of individual gas molecules adsorbedon graphene,” Nature Materials , vol. 6, pp. 652–655.
[22] Y. Xu, C. et al., "Radio frequency electrical transduction of graphene mechanical resonators,” Applied Physics Letters , vol. 97, no. 24, p. 243111, 2010.
[23] R. R. Nair, et al. "Fine Structure Constant Defines Visual Transparencyof Graphene,” Science , vol. 320, no. 5881, p. 1308, 2008.
[24] J. Oostinga, H. Heersche, X. Liu, A. Morpurgo, and V. L.M.K., "Gateinduced insulating state in bilayer graphene devices,” Nature Materials , vol. 7, pp. 151–157,2008.
[25] S. K. Banerjee, L. F. Register, E. Tutuc, D. Basu, S. Kim, D. Reddy, and A. H. Mac-Donald, "Graphene for cmos and beyond cmos applications,” Proceedings of the IEEE ,vol. 98, no. 12, pp. 2032 –2046, 2010.
[26] A. K. Geim and K. Novoselov, "The Rise of Graphene,” Nature Materials, vol. 6, pp. 183–191, 2007.
[27] X. Wang, Y. Ouyang, X. Li, H. Wang, J. Guo, and H. Dai, "Roomtemperatureall- semiconducting sub-10-nm graphenenanoribbon fieldeffect transistors,” Phys.Rev. Lett. , vol. 100, no. 20, p. 206803, 2008.
[28] A. K. Geim, M. Katsnelson, and F. Guinea, "Energy gaps and a zerofield quantum Halleffect in graphene by strain engineering.”
[29] P. Avouris, "Graphene: Electronic and photonic properties and devices,”Nano Letters, vol. 10, no. 11, pp. 4285–4294, 2010.
[30] A. H. Castro Neto, F. Guinea, N. M. R. Peres, "The electronic properties of graphene,” Rev. Mod. Phys. , vol. 81, no. 1, pp. 109–162, Jan 2009.
[31] A. K. Geim, "Graphene: Status and Prospects,” Science ,vol. 324, no. 5934, pp. 1530–1534, 2009.
[32] J. Hass, R. Feng, T. Li, X. Li, Z. Zong, W. A. de Heer, P. N. First, E. H. Conrad, C., "Highly ordered graphene for two dimensional electronics,”Applied Physics Letters , vol. 89, no. 14, pp. 143 106 –143 106–3, 2006.
[33] S. Garaj, W. Hubbard, and J. Golovchenko, "Graphene synthesis by ion implantation,”Applied Physics Letters , vol. 97, no. 18, p. 183103, 2010.
[34] D. Kosynkin, et al. "Longitudinal unzipping of carbon nanotubes to form graphene nanoribbons,” Nature, vol. 458, pp. 872–876.
[35] F. Chen, J. Xia, and N. Tao, "Ionic screening of charged-impurity scattering ingraphene,” Nano Letters, vol. 9, no. 4, pp. 1621–1625, 2009.
[36] F. Schwierz, "Graphene transistors,” Nature Nanotechnology, vol. 5, pp. 487–496, 2010.
[37] A. Das, et al. "Monitoring dopants by Raman scattering in an electrochemically top-gated grapheme transistor,” Nature Nanotechnology, vol. 3, pp. 210–215, 2008.
[38] Y.-M., et al. , "Dual-gate graphene fets with fTof 50 ghz,” Electron Device Letters, IEEE, vol. 31, no. 1,pp. 68 –70, jan. 2010.
[39] Y. Wu, et al., "Rf performance of short channel graphene field-effect transistor,” in Electron Devices Meeting (IEDM), 2010 IEEE International , dec. 2010, pp. 9.6.1 –9.6.3.
[40] Y.-M. Lin, et al. "100-GHz Transistors from Wafer-Scale Epitaxial Graphene,” Science , vol. 327, no. 5966, p. 662, 2010.
[41] Y.-M. Lin, et al. , "Operation of graphene transistors at gigahertz frequencies,” Nano Letters, vol. 9, no. 1, pp. 422–426, 2009.
[42] B. Hardwidge, "Ibm: Graphene as it is won’t re-place silicon in cpus,” January 2011
[43] X. Yang, G. Liu, A."Triple-mode single-transistorgraphene amplifier and its applications,” ACS Nano , vol. 4, no. 10, pp. 5532–5538,
[44] R. Sordan, et al., "Logic gates with a single graphene transistor,”Applied Physics Letters , vol. 94, no. 7, p. 073305, 2009.