{"title":"Graphene Based Electronic Device","authors":"Ali Safari, Pejman Hosseiniun, Iman Rahbari, Mohamad Reza Kalhor","volume":92,"journal":"International Journal of Electrical and Computer Engineering","pagesStart":1239,"pagesEnd":1245,"ISSN":"1307-6892","URL":"https:\/\/publications.waset.org\/pdf\/9998922","abstract":"
The semiconductor industry is placing an increased
\r\nemphasis on emerging materials and devices that may provide
\r\nimproved performance, or provide novel functionality for devices.
\r\nRecently, graphene, as a true two-dimensional carbon material, has
\r\nshown fascinating applications in electronics. In this paper detailed
\r\ndiscussions are introduced for possible applications of grapheme
\r\nTransistor in RF and digital devices.<\/p>\r\n","references":"[1] Novoselov KS, et al. Electric field effect in atomically thin carbon films.\r\nScience 2004;306(5696):666\u20139.\r\n[2] Geim AK, The rise of graphene. Nat Mater 2007;6(3):183\u201391.\r\n[3] Chen JH, , et al. Intrinsicand extrinsic performance limits of graphene\r\ndevices onSiO2. Nat Nanotechnol 2008;3(4):206\u20139.\r\n[4] Schwierz F. Graphene transistors. Nat Nanotechnol2010;5(7):487\u201396.\r\n[5] Das Sarma S, Adam S, Hwang EH, Rossi E. Electronictransport in twodimensional\r\ngraphene. Rev Mod Phys2011;83(2):407\u201370.\r\n[6] Hwang C, Siegel DA, Mo SK, Regan W, Ismachet al. Fermi velocity\r\nengineering in graphene by substrate modification. Sci Rep 2012;2:590.\r\n[7] Balandin AA, Ghosh S, Bao WZ, Calizo I, et al. Superior thermal\r\nconductivity of single-layergraphene. 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