Search results for: Low noise amplifier
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 1000

Search results for: Low noise amplifier

1000 Design of Low Noise Amplifiers for 10 GHz Application

Authors: Makesh Iyer, T. Shanmuganantham

Abstract:

This work deals with the designing of an efficient low noise amplifier for 10.00 GHz applications. The amplifier is designed using Gallium Arsenide High Electron Mobility Transistor (GaAs HEMT) ATF – 36077 with inductive source degeneration technique which is one of the techniques to improve the stability of the potentially unstable device and make it unconditionally stable. Also, different substrates are used for designing the LNA to identify the suitable substrate that gives optimum results. It is observed that the noise immunity is more in Low Noise Amplifier (LNA) designed using RT Duroid 5880 substrate. This design resulted in noise figure of 0.859 dB and power gain of 15.530 dB. The comparative analysis of the LNA design is discussed in this paper.

Keywords: Low noise amplifier, substrate, distributed components, gain, noise figure.

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999 Noise Analysis of Single-Ended Input Differential Amplifier using Stochastic Differential Equation

Authors: Tarun Kumar Rawat, Abhirup Lahiri, Ashish Gupta

Abstract:

In this paper, we analyze the effect of noise in a single- ended input differential amplifier working at high frequencies. Both extrinsic and intrinsic noise are analyzed using time domain method employing techniques from stochastic calculus. Stochastic differential equations are used to obtain autocorrelation functions of the output noise voltage and other solution statistics like mean and variance. The analysis leads to important design implications and suggests changes in the device parameters for improved noise characteristics of the differential amplifier.

Keywords: Single-ended input differential amplifier, Noise, stochastic differential equation, mean and variance.

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998 Noise Optimization Techniques for 1V 1GHz CMOS Low-Noise Amplifiers Design

Authors: M. Zamin Khan, Yanjie Wang, R. Raut

Abstract:

A 1V, 1GHz low noise amplifier (LNA) has been designed and simulated using Spectre simulator in a standard TSMC 0.18um CMOS technology.With low power and noise optimization techniques, the amplifier provides a gain of 24 dB, a noise figure of only 1.2 dB, power dissipation of 14 mW from a 1 V power supply.

Keywords:

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997 55 dB High Gain L-Band EDFA Utilizing Single Pump Source

Authors: M. H. Al-Mansoori, W. S. Al-Ghaithi, F. N. Hasoon

Abstract:

In this paper, we experimentally investigate the performance of an efficient high gain triple-pass L-band Erbium-Doped Fiber (EDF) amplifier structure with a single pump source. The amplifier gain and noise figure variation with EDF pump power, input signal power and wavelengths have been investigated. The generated backward Amplified Spontaneous Emission (ASE) noise of the first amplifier stage is suppressed by using a tunable band-pass filter. The amplifier achieves a signal gain of 55 dB with low noise figure of 3.8 dB at -50 dBm input signal power. The amplifier gain shows significant improvement of 12.8 dB compared to amplifier structure without ASE suppression.

Keywords: Optical amplifiers, EDFA, L-band, optical networks.

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996 A Sub-mW Low Noise Amplifier for Wireless Sensor Networks

Authors: Gianluca Cornetta, David J. Santos, Balwant Godara

Abstract:

A 1.2 V, 0.61 mA bias current, low noise amplifier (LNA) suitable for low-power applications in the 2.4 GHz band is presented. Circuit has been implemented, laid out and simulated using a UMC 130 nm RF-CMOS process. The amplifier provides a 13.3 dB power gain a noise figure NF< 2.28 dB and a 1-dB compression point of -15.69 dBm, while dissipating 0.74 mW. Such performance make this design suitable for wireless sensor networks applications such as ZigBee.

Keywords: Current Reuse, IEEE 802.15.4 (ZigBee), Low NoiseAmplifiers, Wireless Sensor Networks.

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995 Design and Simulation of Low Noise Amplifier Circuit for 5 GHz to 6 GHz

Authors: Hossein Sahoolizadeh, Alishir Moradi Kordalivand, Zargham Heidari

Abstract:

In first stage of each microwave receiver there is Low Noise Amplifier (LNA) circuit, and this stage has important rule in quality factor of the receiver. The design of a LNA in Radio Frequency (RF) circuit requires the trade-off many importance characteristics such as gain, Noise Figure (NF), stability, power consumption and complexity. This situation Forces desingners to make choices in the desing of RF circuits. In this paper the aim is to design and simulate a single stage LNA circuit with high gain and low noise using MESFET for frequency range of 5 GHz to 6 GHz. The desing simulation process is down using Advance Design System (ADS). A single stage LNA has successfully designed with 15.83 dB forward gain and 1.26 dB noise figure in frequency of 5.3 GHz. Also the designed LNA should be working stably In a frequency range of 5 GHz to 6 GHz.

Keywords: Advance Design System, Low Noise Amplifier, Radio Frequency, Noise Figure.

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994 Characteristic of Discrete Raman Amplifier at Different Pump Configurations

Authors: Parekhan M. Jaff

Abstract:

This paper describes the gain and noise performances of discrete Raman amplifier as a function of fiber lengths and the signal input powers for different pump configurations. Simulation has been done by using optisystem 7.0 software simulation at signal wavelength of 1550 nm and a pump wavelength of 1450nm. The results showed that the gain is higher in bidirectional pumping than in counter pumping, the gain changes with increasing the fiber length while the noise figure remain the same for short fiber lengths and the gain saturates differently for different pumping configuration at different fiber lengths and power levels of the signal.

Keywords: Optical Amplifier, Raman Amplifier DiscreteRaman Amplifier (DRA), Wavelength Division Multiplexing(WDM).

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993 Novel Linear Autozeroing Floating-gate Amplifier for Ultra Low-voltage Applications

Authors: Yngvar Berg, Mehdi Azadmehr

Abstract:

In this paper we present a linear autozeroing ultra lowvoltage amplifier. The autozeroing performed by all ULV circuits is important to reduce the impact of noise and especially avoid power supply noise in mixed signal low-voltage CMOS circuits. The simulated data presented is relevant for a 90nm TSMC CMOS process.

Keywords: Low-voltage, trans conductance amplifier, linearity, floating-gate.

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992 Evaluation of the Energy Consumption per Bit inBENES Optical Packet Switch

Authors: V. Eramo, E. Miucci, A. Cianfrani, A. Germoni, M. Listanti

Abstract:

We evaluate the average energy consumption per bit in Optical Packet Switches equipped with BENES switching fabric realized in Semiconductor Optical Amplifier (SOA) technology. We also study the impact that the Amplifier Spontaneous Emission (ASE) noise generated by a transmission system has on the power consumption of the BENES switches due to the gain saturation of the SOAs used to realize the switching fabric. As a matter of example for 32×32 switches supporting 64 wavelengths and offered traffic equal to 0,8, the average energy consumption per bit is 2, 34 · 10-1 nJ/bit and increases if ASE noise introduced by the transmission systems is increased.

Keywords: Benes, Amplifier Spontaneous Emission Noise, EnergyConsumption, Optical Packet Switch.

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991 Analog Front End Low Noise Amplifier in 0.18-µm CMOS for Ultrasound Imaging Applications

Authors: Haridas Kuruveettil, Dongning Zhao, Cheong Jia Hao, Minkyu Je

Abstract:

We present the design of Analog front end (AFE) low noise pre-amplifier implemented in a high voltage 0.18-µm CMOS technology for  a three dimensional ultrasound  bio microscope (3D UBM) application. The fabricated chip has 4X16 pre-amplifiers implemented to interface   a 2-D array of    high frequency capacitive micro-machined ultrasound transducers (CMUT). Core AFE cell consists of a high-voltage pulser in the transmit path, and a low-noise transimpedance amplifier in the receive path. Proposed system offers a high image resolution by the use of high frequency CMUTs with associated high performance imaging electronics integrated together.  Performance requirements and the design methods of the high bandwidth transimpedance amplifier are described in the paper. A single cell of transimpedance (TIA) amplifier and the bias circuit occupies a silicon area of 250X380 µm2 and the full chip occupies a total silicon area of 10x6.8 mm².

Keywords: Ultrasound, analog front end, medical imaging, beam forming, biomicroscope, transimpedance gain.

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990 CAD Tools Broadband Amplifier Design

Authors: Salwa M. Salah Eldeen, Fathi A. Farag, Abd Allah M. Moselhy

Abstract:

This paper proposed a new CAD tools for microwave amplifier design. The proposed tool is based on survey about the broadband amplifier design methods, such as the Feedback amplifiers, balanced amplifiers and Compensated Matching Network The proposed tool is developed for broadband amplifier using a compensated matching network "unconditional stability amplifier". The developed program is based on analytical procedures with ability of smith chart explanation. The C# software is used for the proposed tools implementation. The program is applied on broadband amplifier as an example for testing. The designed amplifier is considered as a broadband amplifier at the range 300-700 MHz. The results are highly agreement with the expected results. Finally, these methods can be extended for wide band amplifier design.

Keywords: Broadband amplifier (BBA), Compensated Matching Network, Microwave Amplifier.

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989 Low-Noise Amplifier Design for Improvement of Communication Range for Wake-up Receiver Based Wireless Sensor Network Application

Authors: Ilef Ketata, Mohamed Khalil Baazaoui, Robert Fromm, Ahmad Fakhfakh, Faouzi Derbel

Abstract:

The integration of wireless communication, e.g. in realor quasi-real-time applications, is related to many challenges such as energy consumption, communication range, latency, quality of service, and reliability. The improvement of wireless sensor network performance starts by enhancing the capabilities of each sensor node. While consuming less energy, wake-up receiver (WuRx) nodes have an impact on reducing latency. The solution for sensitivity improvements of sensor nodes, and WuRx in particular, with an energy consumption expense is low-noise amplifier (LNAs) blocks placed in the RF Antenna. This paper presents a comparative study for improving communication range and decreasing the energy consumption of WuRx nodes.

Keywords: Wireless sensor network, wake-up receiver, duty-cycled, low-noise amplifier, envelope detector, range study.

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988 Evaluation of Power Consumption of Spanke Optical Packet Switch

Authors: V. Eramo, E. Miucci, A. Cianfrani, A. Germoni, M. Listanti

Abstract:

The power consumption of an Optical Packet Switch equipped with SOA technology based Spanke switching fabric is evaluated. Sophisticated analytical models are introduced to evaluate the power consumption versus the offered traffic, the main switch parameters, and the used device characteristics. The impact of Amplifier Spontaneous Emission (ASE) noise generated by a transmission system on the power consumption is investigated. As a matter of example for 32×32 switches supporting 64 wavelengths and offered traffic equal to 0,8, the average energy consumption per bit is 5, 07 · 10-2 nJ/bit and increases if ASE noise introduced by the transmission systems is increased.

Keywords: Spanke, Amplifier Spontaneous Emission Noise, Power Consumption, Optical Packet Switch.

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987 Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology

Authors: Renbin Dai, Rana Arslan Ali Khan

Abstract:

The design of Class A and Class AB 2-stage X band Power Amplifier is described in this report. This power amplifier is part of a transceiver used in radar for monitoring iron characteristics in a blast furnace. The circuit was designed using foundry WIN Semiconductors. The specification requires 15dB gain in the linear region, VSWR nearly 1 at input as well as at the output, an output power of 10 dBm and good stable performance in the band 10.9-12.2 GHz. The design was implemented by using inter-stage configuration, the Class A amplifier was chosen for driver stage i.e. the first amplifier focusing on the gain and the output amplifier conducted at Class AB with more emphasis on output power.

Keywords: Power amplifier, Class AB, Class A, MMIC, 2-stage, X band.

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986 A SiGe Low Power RF Front-End Receiver for 5.8GHz Wireless Biomedical Application

Authors: Hyunwon Moon

Abstract:

It is necessary to realize new biomedical wireless communication systems which send the signals collected from various bio sensors located at human body in order to monitor our health. Also, it should seamlessly connect to the existing wireless communication systems. A 5.8 GHz ISM band low power RF front-end receiver for a biomedical wireless communication system is implemented using a 0.5 µm SiGe BiCMOS process. To achieve low power RF front-end, the current optimization technique for selecting device size is utilized. The implemented low noise amplifier (LNA) shows a power gain of 9.8 dB, a noise figure (NF) of below 1.75 dB, and an IIP3 of higher than 7.5 dBm while current consumption is only 6 mA at supply voltage of 2.5 V. Also, the performance of a down-conversion mixer is measured as a conversion gain of 11 dB and SSB NF of 10 dB.

Keywords: Biomedical, low noise amplifier, mixer, receiver, RF front-end, SiGe.

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985 Microwave LNA Design Based On Adaptive Network Fuzzy Inference and Evolutionary Optimization

Authors: Samad Nejatian, Vahideh Rezaie, Vahid Asadpour

Abstract:

This paper presents a novel approach for the design of microwave circuits using Adaptive Network Fuzzy Inference Optimizer (ANFIO). The method takes advantage of direct synthesis of subsections of the amplifier using very fast and accurate ANFIO models based on exact simulations using ADS. A mapping from course space to fine space known as space mapping is also used. The proposed synthesis approach takes into account the noise and scattering parameters due to parasitic elements to achieve optimal results. The overall ANFIO system is capable of designing different LNAs at different noise and scattering criteria. This approach offers significantly reduced time in the design of microwave amplifiers within the validity range of the ANFIO system. The method has been proven to work efficiently for a 2.4GHz LNA example. The S21 of 10.1 dB and noise figure (NF) of 2.7 dB achieved for ANFIO while S21 of 9.05 dB and NF of 2.6 dB achieved for ANN.

Keywords: fuzzy system, low noise amplifier, microwaveamplifier, space mapping

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984 FWM Aware Fuzzy Dynamic Routing and Wavelength Assignment in Transparent Optical Networks

Authors: Debajyoti Mishra, Urmila Bhanja

Abstract:

In this paper, a novel fuzzy approach is developed while solving the Dynamic Routing and Wavelength Assignment (DRWA) problem in optical networks with Wavelength Division Multiplexing (WDM). In this work, the effect of nonlinear and linear impairments such as Four Wave Mixing (FWM) and amplifier spontaneous emission (ASE) noise are incorporated respectively. The novel algorithm incorporates fuzzy logic controller (FLC) to reduce the effect of FWM noise and ASE noise on a requested lightpath referred in this work as FWM aware fuzzy dynamic routing and wavelength assignment algorithm. The FWM crosstalk products and the static FWM noise power per link are pre computed in order to reduce the set up time of a requested lightpath, and stored in an offline database. These are retrieved during the setting up of a lightpath and evaluated online taking the dynamic parameters like cost of the links into consideration.

Keywords: Amplifier spontaneous emission (ASE), Dynamic routing and wavelength assignment, Four wave mixing (FWM), Fuzzy rule based system (FRBS).

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983 Investigation of Constant Transconductance Circuit for Low Power Low-Noise Amplifier

Authors: Wei Yi Lim, M. Annamalai Arasu, M. Kumarasamy Raja, Minkyu Je

Abstract:

In this paper, the design of wide-swing constant transconductance (gm) bias circuit that generates bias voltage for low-noise amplifier (LNA) circuit design by using an off-chip resistor is demonstrated. The overall transconductance (Gm) generated by the constant gm bias circuit is important to maintain the overall gain and noise figure of the LNA circuit. Therefore, investigation is performed to study the variation in Gm with process, temperature and supply voltage (PVT).  Temperature and supply voltage are swept from -10 °C to 85 °C and 1.425 V to 1.575 V respectively, while the process conditions are also varied to the extreme and the gm variation is eventually concluded at between -3 % to 7 %. With the slight variation in the gm value, through simulation, at worst condition of state SS, we are able to attain a conversion gain (S21) variation of -3.10 % and a noise figure (NF) variation of 18.71 %. The whole constant gm circuit draws approximately 100 µA from a 1.5V supply and is designed based on 0.13 µm CMOS process. 

Keywords: Transconductance, LNA, temperature, process.

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982 Modeling of a Second Order Non-Ideal Sigma-Delta Modulator

Authors: Abdelghani Dendouga, Nour-Eddine Bouguechal, Souhil Kouda, Samir Barra

Abstract:

A behavioral model of a second order switchedcapacitor Sigma-Delta modulator is presented. The purpose of this work is the presentation of a behavioral model of a second order switched capacitor ΣΔ modulator considering (Error due to Clock Jitter, Thermal noise Amplifier Noise, Amplifier Slew-Rate, Non linearity of amplifiers, Gain error, Charge Injection, Clock Feedthrough, and Nonlinear on-resistance). A comparison between the use of MOS switches and the use transmission gate switches use is analyzed.

Keywords: Charge injection, clock feed through, Sigma Deltamodulators, Sigma Delta non-idealities, switched capacitor.

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981 Design of a CMOS Differential Operational Transresistance Amplifier in 90 nm CMOS Technology

Authors: Hafiz Muhammad Obaid, Umais Tayyab, Shabbir Majeed Ch.

Abstract:

In this paper, a CMOS differential operational transresistance amplifier (OTRA) is presented. The amplifier is designed and implemented in a standard umc90-nm CMOS technology. The differential OTRA provides wider bandwidth at high gain. It also shows much better rise and fall time and exhibits a very good input current dynamic range of 50 to 50 μA. The OTRA can be used in many analog VLSI applications. The presented amplifier has high gain bandwidth product of 617.6 THz Ω. The total power dissipation of the presented amplifier is also very low and it is 0.21 mW.

Keywords: CMOS, differential, operational transresistance amplifier, OTRA, 90 nm, VLSI.

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980 Multi-Level Pulse Width Modulation to Boost the Power Efficiency of Switching Amplifiers for Analog Signals with Very High Crest Factor

Authors: Jan Doutreloigne

Abstract:

The main goal of this paper is to develop a switching amplifier with optimized power efficiency for analog signals with a very high crest factor such as audio or DSL signals. Theoretical calculations show that a switching amplifier architecture based on multi-level pulse width modulation outperforms all other types of linear or switching amplifiers in that respect. Simulations on a 2 W multi-level switching audio amplifier, designed in a 50 V 0.35 mm IC technology, confirm its superior performance in terms of power efficiency. A real silicon implementation of this audio amplifier design is currently underway to provide experimental validation.

Keywords: Audio amplifier, multi-level switching amplifier, power efficiency, pulse width modulation, PWM, self-oscillating amplifier.

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979 Transimpedance Amplifier for Integrated 3D Ultrasound Biomicroscope Applications

Authors: Xiwei Huang, Hyouk-Kyu Cha, Dongning Zhao, Bin Guo, Minkyu Je, Hao Yu

Abstract:

This paper presents the design and implementation of a fully integrated transimpedance amplifier (TIA) as the analog frontend receiver for Capacitive Micromachined Ultrasound Transducers (CMUTs) for ultrasound biomicroscope imaging application. The amplifier is designed to amplify the received signals from 17.5MHz to 52.5MHz with a center frequency of 35MHz. The TIA was fabricated in GF 0.18μm 1P6M 30V high voltage process. The measurement results show that the designed amplifier can reach a transimpedance gain of 61.08dBΩ and operating frequency from 17.5MHz to 100MHz with 1VP-P output voltage under 6V power supply.

Keywords: 3D ultrasound biomicroscope, analog front-end, transimpedance amplifier, CMUT

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978 A Behavior Model of Discrete Sampling and Hold Amplifier based on AC Response

Authors: Wang Xing-hua, Zhong Shun-an, Zhang Zhuo

Abstract:

A kind of behavior model for discrete sampling and hold amplifier with charge transmission is analyzed. The transfer function and behavior features are based on the main AC responses of operation amplifier. The result used in pipelined and sigma-delta ADC shows the exact of model of sampling and hold amplifier, and the non-ideal factors are taken into account.

Keywords: SHA, response, behavior, transfer function.

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977 PSRR Enhanced LDO Regulator Using Noise Sensing Circuit

Authors: Min-ju Kwon, Chae-won Kim, Jeong-yun Seo, Hee-guk Chae, Yong-seo Koo

Abstract:

In this paper, we presented the LDO (low-dropout) regulator which enhanced the PSRR by applying the constant current source generation technique through the BGR (Band Gap Reference) to form the noise sensing circuit. The current source through the BGR has a constant current value even if the applied voltage varies. Then, the noise sensing circuit, which is composed of the current source through the BGR, operated between the error amplifier and the pass transistor gate of the LDO regulator. As a result, the LDO regulator has a PSRR of -68.2 dB at 1k Hz, -45.85 dB at 1 MHz and -45 dB at 10 MHz. the other performance of the proposed LDO was maintained at the same level of the conventional LDO regulator.

Keywords: LDO regulator, noise sensing circuit, current reference, pass transistor.

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976 Inverter Based Gain-Boosting Fully Differential CMOS Amplifier

Authors: Alpana Agarwal, Akhil Sharma

Abstract:

This work presents a fully differential CMOS amplifier consisting of two self-biased gain boosted inverter stages, that provides an alternative to the power hungry operational amplifier. The self-biasing avoids the use of external biasing circuitry, thus reduces the die area, design efforts, and power consumption. In the present work, regulated cascode technique has been employed for gain boosting. The Miller compensation is also applied to enhance the phase margin. The circuit has been designed and simulated in 1.8 V 0.18 µm CMOS technology. The simulation results show a high DC gain of 100.7 dB, Unity-Gain Bandwidth of 107.8 MHz, and Phase Margin of 66.7o with a power dissipation of 286 μW and makes it suitable candidate for the high resolution pipelined ADCs.

Keywords: CMOS amplifier, gain boosting, inverter-based amplifier, self-biased inverter.

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975 Design and Layout of Two Stage High Band Width Operational Amplifier

Authors: Yasir Mahmood Qureshi

Abstract:

This paper presents the design and layout of a two stage, high speed operational amplifiers using standard 0.35um CMOS technology. The design procedure involves designing the bias circuit, the differential input pair, and the gain stage using CAD tools. Both schematic and layout of the operational amplifier along with the comparison in the results of the two has been presented. The operational amplifier designed, has a gain of 93.51db at low frequencies. It has a gain bandwidth product of 55.07MHz, phase margin of 51.9º and a slew rate of 22v/us for a load of capacitor of 10pF.

Keywords: Gain bandwidth product, Operational Amplifier, phase margin, slew rate.

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974 A Novel Logarithmic Current-Controlled Current Amplifier (LCCA)

Authors: Karama M. AL-Tamimi, Munir A. Al-Absi

Abstract:

A new OTA-based logarithmic-control variable gain current amplifier (LCCA) is presented. It consists of two Operational Transconductance Amplifier (OTA) and two PMOS transistors biased in weak inversion region. The circuit operates from 0.6V DC power supply and consumes 0.6 μW. The linear-dB controllable output range is 43 dB with maximum error less than 0.5dB. The functionality of the proposed design was confirmed using HSPICE in 0.35μm CMOS process technology.

Keywords: LCCA, OTA, Logarithmic, VGA, Weak inversion, Current-mode

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973 Behavioral Modeling Accuracy for RF Power Amplifier with Memory Effects

Authors: Chokri Jebali, Noureddine Boulejfen, Ali Gharsallah, Fadhel M. Ghannouchi

Abstract:

In this paper, a system level behavioural model for RF power amplifier, which exhibits memory effects, and based on multibranch system is proposed. When higher order terms are included, the memory polynomial model (MPM) exhibits numerical instabilities. A set of memory orthogonal polynomial model (OMPM) is introduced to alleviate the numerical instability problem associated to MPM model. A data scaling and centring algorithm was applied to improve the power amplifier modeling accuracy. Simulation results prove that the numerical instability can be greatly reduced, as well as the model precision improved with nonlinear model.

Keywords: power amplifier, orthogonal model, polynomialmodel , memory effects.

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972 A Paradigm for Characterization and Checking of a Human Noise Behavior

Authors: Himanshu Dehra

Abstract:

This paper presents a paradigm for characterization and checking of human noise behavior. The definitions of ‘Noise’ and ‘Noise Behavior’ are devised. The concept of characterization and examining of Noise Behavior is obtained from the proposed paradigm of Psychoacoustics. The measurement of human noise behavior is discussed through definitions of noise sources and noise measurements. The noise sources, noise measurement equations and noise filters are further illustrated through examples. The theory and significance of solar energy acoustics is presented for life and its activities. Human comfort and health are correlated with human brain through physiological responses and noise protection. Examples of heat stress, intense heat, sweating and evaporation are also enumerated.

Keywords: Human brain, noise behavior, noise characterization, noise filters, physiological responses, psychoacoustics.

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971 High-Power Amplifier Pre-distorter Based on Neural Networks for 5G Satellite Communications

Authors: Abdelhamid Louliej, Younes Jabrane

Abstract:

Satellites are becoming indispensable assets to fifth-generation (5G) new radio architecture, complementing wireless and terrestrial communication links. The combination of satellites and 5G architecture allows consumers to access all next-generation services anytime, anywhere, including scenarios, like traveling to remote areas (without coverage). Nevertheless, this solution faces several challenges, such as a significant propagation delay, Doppler frequency shift, and high Peak-to-Average Power Ratio (PAPR), causing signal distortion due to the non-linear saturation of the High-Power Amplifier (HPA). To compensate for HPA non-linearity in 5G satellite transmission, an efficient pre-distorter scheme using Neural Networks (NN) is proposed. To assess the proposed NN pre-distorter, two types of HPA were investigated: Travelling Wave Tube Amplifier (TWTA) and Solid-State Power Amplifier (SSPA). The results show that the NN pre-distorter design presents an Error Vector Magnitude (EVM) improvement by 95.26%. Normalized Mean Square Error (NMSE) and Adjacent Channel Power Ratio (ACPR) were reduced by -43,66 dB and 24.56 dBm, respectively. Moreover, the system suffers no degradation of the Bit Error Rate (BER) for TWTA and SSPA amplifiers.

Keywords: Satellites, 5G, Neural Networks, High-Power Amplifier, Travelling Wave Tube Amplifier, Solid-State Power Amplifier, EVM, NMSE, ACPR.

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