%0 Journal Article
	%A  Renbin Dai and  Rana Arslan Ali Khan
	%D 2008
	%J International Journal of Electronics and Communication Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 15, 2008
	%T Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology
	%U https://publications.waset.org/pdf/14853
	%V 15
	%X The design of Class A and Class AB 2-stage X band
Power Amplifier is described in this report. This power amplifier is
part of a transceiver used in radar for monitoring iron characteristics
in a blast furnace. The circuit was designed using foundry WIN
Semiconductors. The specification requires 15dB gain in the linear
region, VSWR nearly 1 at input as well as at the output, an output
power of 10 dBm and good stable performance in the band 10.9-12.2
GHz. The design was implemented by using inter-stage
configuration, the Class A amplifier was chosen for driver stage i.e.
the first amplifier focusing on the gain and the output amplifier
conducted at Class AB with more emphasis on output power.
	%P 504 - 509