Search results for: Semiconductor switch
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 270

Search results for: Semiconductor switch

150 The Design of PFM Mode DC-DC Converter with DT-CMOS Switch

Authors: Jae-Chang Kwak, Yong-Seo Koo

Abstract:

The high efficiency power management IC (PMIC) with switching device is presented in this paper. PMIC is controlled with PFM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS (DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increase, resulting in a much higher current handling capability than standard MOSFET. PFM control circuits consist of a generator, AND gate and comparator. The generator is made to have 1.2MHz oscillation voltage. The DC-DC converter based on PFM control circuit and low on-resistance switching device is presented in this paper.

Keywords: DT-CMOS, PMIC, PFM, DC-DC converter.

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149 Design of Smart Energy Monitoring System for Green IT Life

Authors: Min Goo Lee, Yong Kuk Park, Kyung Kwon Jung, Jun Jae Yoo

Abstract:

This paper describes the smart energy monitoring system with a wireless sensor network for monitoring of electrical usage in smart house. Proposed system is composed of wireless plugs and energy control wallpad server. The wireless plug integrates an AC power socket, a relay to switch the socket ON/OFF, a Hall effect sensor to sense current of load appliance and a Kmote. The Kmote is a wireless communication interface based on TinyOS. We evaluated wireless plug in a laboratory, analyzed and presented energy consumption data from electrical appliances for 3 months in home.

Keywords: smart house, energy monitoring, wireless plug, wireless sensor network, current consumption.

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148 Investigation of 5,10,15,20-Tetrakis(3-,5--Di-Tert-Butylphenyl)Porphyrinatocopper(II) for Electronics Applications

Authors: Zubair Ahmad, M. H. Sayyad, M. Yaseen, M. Ali

Abstract:

In this work, an organic compound 5,10,15,20- Tetrakis(3,5-di-tertbutylphenyl)porphyrinatocopper(II) (TDTBPPCu) is studied as an active material for thin film electronic devices. To investigate the electrical properties of TDTBPPCu, junction of TDTBPPCu with heavily doped n-Si and Al is fabricated. TDTBPPCu film was sandwiched between Al and n-Si electrodes. Various electrical parameters of TDTBPPCu are determined. The current-voltage characteristics of the junction are nonlinear, asymmetric and show rectification behavior, which gives the clue of formation of depletion region. This behavior indicates the potential of TDTBPPCu for electronics applications. The current-voltage and capacitance-voltage techniques are used to find the different electronic parameters.

Keywords: P-type, organic semiconductor, Electricalcharacteristics

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147 Production of Spherical Ag/ZnO Nanocomposite Particles for Photocatalytic Applications

Authors: K. B. Dermenci, B. Ebin, S.Gürmen

Abstract:

Noble metal participation in nanostructured semiconductor catalysts has drawn much interest because of their improved properties. Recently, it has been discussed by many researchers that Ag participation in TiO2, CuO, ZnO semiconductors showed improved photocatalytic and optical properties. In this research, Ag/ZnO nanocomposite particles were prepared by Ultrasonic Spray Pyrolysis(USP) Method. 0.1M silver and zinc nitrate aqueous solutions were used as precursor solutions. The Ag:Zn atomic ratio of the solution was selected 1:1. Experiments were taken place under constant air flow of 400 mL/min at 800°C furnace temperature. Particles were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Energy Dispersive Spectroscopy (EDS). The crystallite sizes of Ag and ZnO in composite particles are 24.6 nm, 19.7 nm respectively. Although, spherical nanocomposite particles are in a range of 300- 800 nm, these particles are formed by the aggregation of primary particles which are in a range of 20-60 nm.

Keywords: Ag/ZnO nanocatalysts, Nanotechnology, USP

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146 Plasmonic Absorption Enhancement in Au/CdS Nanocomposite

Authors: K. Easawi, M. Nabil, T. Abdallah, S. Negm, H. Talaat

Abstract:

Composite nanostructures of metal core/semiconductor shell (Au/CdS) configuration were prepared using organometalic method. UV-Vis spectra for the Au/CdS colloids show initially two well separated bands, corresponding to surface plasmon of the Au core, and the exciton of CdS shell. The absorption of CdS shell is enhanced, while the Au plasmon band is suppressed as the shell thickness increases. The shell sizes were estimated from the optical spectra using the effective mass approximation model (EMA), and compared to the sizes of the Au core and CdS shell measured by high resolution transmission electron microscope (HRTEM). The changes in the absorption features are discussed in terms of gradual increase in the coupling strength of the Au core surface plasmon and the exciton in the CdS. leading to charge transfer and modification of electron oscillation in Au core.

Keywords: Nanocomposites, Plasmonics.

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145 Organic Thin Film Transistors based Oligothiophine Derivatives using DZ-Dihexyl(quarter- and sexi-)Thiophene

Authors: Jae-Hong Kwon, Myung-Ho Chung, Tae-Yeon Oh, Hyeon-Seok Bae, Byeong-Kwon Ju

Abstract:

End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers,DZ-dihexylquarterthiophene (DH-4T) and DZ-dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtained a stable characteristic curve. The field effect mobility, Pwas calculated to be 3.2910-4 cm2/Vs for DH-6T based OTFT; while the DH-4T based OTFT had 1.8810-5 cm2/Vs.KeywordsOrganic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.

Keywords: Organic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.

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144 High Impedance Faults Detection Technique Based on Wavelet Transform

Authors: Ming-Ta Yang, Jin-Lung Guan, Jhy-Cherng Gu

Abstract:

The purpose of this paper is to solve the problem of protecting aerial lines from high impedance faults (HIFs) in distribution systems. This investigation successfully applies 3I0 zero sequence current to solve HIF problems. The feature extraction system based on discrete wavelet transform (DWT) and the feature identification technique found on statistical confidence are then applied to discriminate effectively between the HIFs and the switch operations. Based on continuous wavelet transform (CWT) pattern recognition of HIFs is proposed, also. Staged fault testing results demonstrate that the proposed wavelet based algorithm is feasible performance well.

Keywords: Continuous wavelet transform, discrete wavelet transform, high impedance faults, statistical confidence.

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143 C4H6 Adsorption on the Surface of a BN Nanotube: DFT Studies

Authors: Maziar Noei

Abstract:

Adsorption of a boron nitride nanotube (BNNT) was examined toward ethylacetylene (C4H6) molecule by using density functional theory (DFT) calculations at the B3LYP/6-31G (d) level, and it was found that the adsorption energy (Ead) of ethylacetylene the pristine nanotubes is about -1.60kcal/mol. But when nanotube has been doped with Si and Al atoms, the adsorption energy of ethylacetylene molecule was increased. Calculation showed that when the nanotube is doping by Al, the adsorption energy is about - 24.19kcal/mol and also the amount of HOMO/LUMO energy gap (Eg) will reduce significantly. Boron nitride nanotube is a suitable adsorbent for ethylacetylene and can be used in separation processes ethylacetylene. It is seem that nanotube (BNNT) is a suitable semiconductor after doping, and the doped BNNT in the presence of ethylacetylene an electrical signal is generating directly and therefore can potentially be used for ethylacetylene sensors.

Keywords: Sensor, Nanotube, DFT, Ethylacetylene.

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142 Comparative Performance Analysis of Fiber Delay Line Based Buffer Architectures for Contention Resolution in Optical WDM Networks

Authors: Manoj Kumar Dutta

Abstract:

Wavelength Division Multiplexing (WDM) technology is the most promising technology for the proper utilization of huge raw bandwidth provided by an optical fiber. One of the key problems in implementing the all-optical WDM network is the packet contention. This problem can be solved by several different techniques. In time domain approach the packet contention can be reduced by incorporating Fiber Delay Lines (FDLs) as optical buffer in the switch architecture. Different types of buffering architectures are reported in literatures. In the present paper a comparative performance analysis of three most popular FDL architectures are presented in order to obtain the best contention resolution performance. The analysis is further extended to consider the effect of different fiber non-linearities on the network performance.

Keywords: WDM network, contention resolution, optical buffering, non-linearity, throughput.

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141 Simulation of High Performance Nanoscale Partially Depleted SOI n-MOSFET Transistors

Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

Abstract:

Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, Kink Effect, SILVACO TCAD.

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140 Schmitt Trigger Based SRAM Using Finfet Technology- Shorted Gate Mode

Authors: Vasundara Patel K. S., Harsha N. Bhushan, Kiran G. Gadag, Nischal Prasad B. N., Mohmmed Haroon

Abstract:

The most widely used semiconductor memory types are the Dynamic Random Access Memory (DRAM) and Static Random Access memory (SRAM). Competition among memory manufacturers drives the need to decrease power consumption and reduce the probability of read failure. A technology that is relatively new and has not been explored is the FinFET technology. In this paper, a single cell Schmitt Trigger Based Static RAM using FinFET technology is proposed and analyzed. The accuracy of the result is validated by means of HSPICE simulations with 32nm FinFET technology and the results are then compared with 6T SRAM using the same technology.

Keywords: Schmitt trigger based SRAM, FinFET, and Static Noise Margin.

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139 Innovation and Analysis of Vibrating Fork Level Switch

Authors: Kuen-Ming Shu, Cheng-Yu Chen

Abstract:

A vibrating-fork sensor can measure the level height of solids and liquids and operates according to the principle that vibrations created by piezoelectric ceramics are transmitted to the vibrating fork, which produces resonance. When the vibrating fork touches an object, its resonance frequency changes and produces a signal that returns to a controller for immediate adjustment, so as to effectively monitor raw material loading. The design of the vibrating fork in a vibrating-fork material sensor is crucial. In this paper, ANSYS finite element analysis software is used to perform modal analysis on the vibrations of the vibrating fork. In addition, to design and produce a superior vibrating fork, the dimensions and welding shape of the vibrating fork are compared in a simulation performed using the Taguchi method.

Keywords: Vibrating fork, piezoelectric ceramics, sound wave, ANSYS, Taguchi method, modal analysis.

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138 Empirical Study on the Diffusion of Smartphones and Consumer Behaviour

Authors: F. Isada, Y. Isada

Abstract:

In this research, the diffusion of innovation regarding smartphone usage is analysed through a consumer behaviour theory. This research aims to determine whether a pattern surrounding the diffusion of innovation exists. As a methodology, an empirical study of the switch from a conventional cell phone to a smartphone was performed. Specifically, a questionnaire survey was completed by general consumers, and the situational and behavioural characteristics of switching from a cell phone to a smartphone were analysed. In conclusion, we found that the speed of the diffusion of innovation, the consumer behaviour characteristics, and the utilities of the product vary according to the stage of the product life cycle.

Keywords: Diffusion of innovation, consumer behaviour, product life cycle, smartphone, empirical study, questionnaire survey.

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137 Vision-based Network System for Industrial Applications

Authors: Taweepol Suesut, Arjin Numsomran, Vittaya Tipsuwanporn

Abstract:

This paper presents the communication network for machine vision system to implement to control systems and logistics applications in industrial environment. The real-time distributed over the network is very important for communication among vision node, image processing and control as well as the distributed I/O node. A robust implementation both with respect to camera packaging and data transmission has been accounted. This network consists of a gigabit Ethernet network and a switch with integrated fire-wall is used to distribute the data and provide connection to the imaging control station and IEC-61131 conform signal integration comprising the Modbus TCP protocol. The real-time and delay time properties each part on the network were considered and worked out in this paper.

Keywords: Distributed Real-Time Automation, Machine Visionand Ethernet.

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136 Optimization and Determination of Process Parameters in Thin Film SOI Photo-BJMOSFET

Authors: Hai-Qing Xie, Yun Zeng, Yong-Hong Yan, Guo-Liang Zhang, Tai-Hong Wang

Abstract:

We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V.

Keywords: Photo-to-dark-current contrast ratio, Photo-current, Dark-current, Process parameter

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135 Automatic Deactivation in Phased Array Probe for Human Prostate Magnetic Resonance Imaging at 1.5T

Authors: Fotios N. Vlachos, Anastasios D. Garetsos, Nikolaos K. Uzunoglu, Efstathios D. Gotsis

Abstract:

A four element prototype phased array surface probe has been designed and constructed to improve clinical human prostate spectroscopic data. The probe consists of two pairs of adjacent rectangular coils with an optimum overlap to reduce the mutual inductance. The two pairs are positioned on the anterior and the posterior pelvic region and two couples of varactors at the input of each coil undertake the procedures of tuning and matching. The probe switches off and on automatically during the consecutive phases of the MR experiment with the use of an analog switch that is triggered by a microcontroller. Experimental tests that were carried out resulted in high levels of tuning accuracy. Also, the switching mechanism functions properly for various applied loads and pulse sequence characteristics, producing only 10 μs of latency.

Keywords: Automatic tuning, prostate imaging, phased array, spectroscopy.

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134 STM Spectroscopy of Alloyed Nanocrystal Composite CdSxSe1-X

Authors: T. Abdallah, K. Easawi, A. Khalid, S. Negm, H. Talaat

Abstract:

Nanocrystals (NC) alloyed composite CdSxSe1-x(x=0 to 1) have been prepared using the chemical solution deposition technique. The energy band gap of these alloyed nanocrystals of approximately the same size, have been determined by scanning tunneling spectroscopy (STS) technique at room temperature. The values of the energy band gap obtained directly using STS are compared to those measured by optical spectroscopy. Increasing the molar fraction ratio x from 0 to 1 causes clearly observed increase in the band gap of the alloyed composite nanocrystal. Vegard-s law was applied to calculate the parameters of the effective mass approximation (EMA) model and the dimension obtained were compared to the values measured by STM. The good agreement of the calculated and measured values is a direct result of applying Vegard's law in the nanocomposites.

Keywords: Alloy semiconductor nanocrystals, STM.

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133 Discovery of Fuzzy Censored Production Rules from Large Set of Discovered Fuzzy if then Rules

Authors: Tamanna Siddiqui, M. Afshar Alam

Abstract:

Censored Production Rule is an extension of standard production rule, which is concerned with problems of reasoning with incomplete information, subject to resource constraints and problem of reasoning efficiently with exceptions. A CPR has a form: IF A (Condition) THEN B (Action) UNLESS C (Censor), Where C is the exception condition. Fuzzy CPR are obtained by augmenting ordinary fuzzy production rule “If X is A then Y is B with an exception condition and are written in the form “If X is A then Y is B Unless Z is C. Such rules are employed in situation in which the fuzzy conditional statement “If X is A then Y is B" holds frequently and the exception condition “Z is C" holds rarely. Thus “If X is A then Y is B" part of the fuzzy CPR express important information while the unless part acts only as a switch that changes the polarity of “Y is B" to “Y is not B" when the assertion “Z is C" holds. The proposed approach is an attempt to discover fuzzy censored production rules from set of discovered fuzzy if then rules in the form: A(X) ÔçÆ B(Y) || C(Z).

Keywords: Uncertainty Quantification, Fuzzy if then rules, Fuzzy Censored Production Rules, Learning algorithm.

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132 A Fault Tolerant Token-based Algorithm for Group Mutual Exclusion in Distributed Systems

Authors: Abhishek Swaroop, Awadhesh Kumar Singh

Abstract:

The group mutual exclusion (GME) problem is a variant of the mutual exclusion problem. In the present paper a token-based group mutual exclusion algorithm, capable of handling transient faults, is proposed. The algorithm uses the concept of dynamic request sets. A time out mechanism is used to detect the token loss; also, a distributed scheme is used to regenerate the token. The worst case message complexity of the algorithm is n+1. The maximum concurrency and forum switch complexity of the algorithm are n and min (n, m) respectively, where n is the number of processes and m is the number of groups. The algorithm also satisfies another desirable property called smooth admission. The scheme can also be adapted to handle the extended group mutual exclusion problem.

Keywords: Dynamic request sets, Fault tolerance, Smoothadmission, Transient faults.

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131 Vertically Grown p–Type ZnO Nanorod on Ag Thin Film

Authors: Jihyun Park, Tae Il Lee, Jae-Min Myoung

Abstract:

A Silver (Ag) thin film is introduced as a template and doping source for vertically aligned p–type ZnO nanorods. ZnO nanorods were grown using an ammonium hydroxide based hydrothermal process. During the hydrothermal process, the Ag thin film was dissolved to generate Ag ions in the solution. The Ag ions can contribute to doping in the wurzite structure of ZnO and the (111) grain of Ag thin film can be the epitaxial temporal template for the (0001) plane of ZnO. Hence, Ag–doped p–type ZnO nanorods were successfully grown on the substrate, which can be an electrode or semiconductor for the device application. To demonstrate the potentials of this idea, p–n diode was fabricated and its electrical characteristics were demonstrated.

Keywords: Ag–doped ZnO nanorods, Hydrothermal process, p–n homo–junction diode, p–type ZnO.

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130 Methodology of Realization for Supervisor and Simulator Dedicated to a Semiconductor Research and Production Factory

Authors: Hanane Ondella, Pierre Ladet, David Ferrand, Pat Sloan

Abstract:

In the micro and nano-technology industry, the «clean-rooms» dedicated to manufacturing chip, are equipped with the most sophisticated equipment-tools. There use a large number of resources in according to strict specifications for an optimum working and result. The distribution of «utilities» to the production is assured by teams who use a supervision tool. The studies show the interest to control the various parameters of production or/and distribution, in real time, through a reliable and effective supervision tool. This document looks at a large part of the functions that the supervisor must assure, with complementary functionalities to help the diagnosis and simulation that prove very useful in our case where the supervised installations are complexed and in constant evolution.

Keywords: Control-Command, evolution, non regression, performances, real time, simulation, supervision.

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129 Optimal Resource Configuration and Allocation Planning Problem for Bottleneck Machines and Auxiliary Tools

Authors: Yin-Yann Chen, Tzu-Ling Chen

Abstract:

This study presents the case of an actual Taiwanese semiconductor assembly and testing manufacturer. Three major bottleneck manufacturing processes, namely, die bond, wire bond, and molding, are analyzed to determine how to use finite resources to achieve the optimal capacity allocation. A medium-term capacity allocation planning model is developed by considering the optimal total profit to satisfy the promised volume demanded by customers and to obtain the best migration decision among production lines for machines and tools. Finally, sensitivity analysis based on the actual case is provided to explore the effect of various parameter levels.

Keywords: Capacity planning, capacity allocation, machine migration, resource configuration.

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128 Analysis of CNT Bundle and its Comparison with Copper for FPGAs Interconnects

Authors: Kureshi Abdul Kadir, Mohd. Hasan

Abstract:

Each new semiconductor technology node brings smaller transistors and wires. Although this makes transistors faster, wires get slower. In nano-scale regime, the standard copper (Cu) interconnect will become a major hurdle for FPGA interconnect due to their high resistivity and electromigration. This paper presents the comprehensive evaluation of mixed CNT bundle interconnects and investigates their prospects as energy efficient and high speed interconnect for future FPGA routing architecture. All HSPICE simulations are carried out at operating frequency of 1GHz and it is found that mixed CNT bundle implemented in FPGAs as interconnect can potentially provide a substantial delay and energy reduction over traditional interconnects at 32nm process technology.

Keywords: CMOS, Copper Interconnect, Mixed CNT Bundle Interconnect, FPGAs.

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127 Seismic Behavior of Steel Structure with Buckling- Restrained Braces

Authors: M. Reza Bagerzadeh Karimi, M. Ali Lotfollahi Yaghin, R. Mehdi Nezhad, V. Sadeghi, M. Aghabalaie

Abstract:

One of the main purposes of designing bucklingrestrained braces is the fact that the entire lateral load is wasted by the braces, the entire gravitational load is moved to the foundation through the beams, and the columns can be moved to the foundation. In other words, braces are designed for bearing lateral load. In the implementation of the structure, it should be noted that the implementation of various parts of the structure must be conducted in such a way that the buckling-restrained braces would not bear the gravitational load. Moreover, this type of brace has been investigated under impact loading, and the design goals of designing method (direct motion) are controlled under impact loading. The results of dynamic analysis are shown as the relocation charts of the floors and switch between the floors. Finally, the results are compared with each other.

Keywords: Buckling-Restrained Braced Frame (BRBF), energydissipating, ABAQUS, SAP2000, impact load.

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126 An Embedded System Design for SRAM SEU Test

Authors: Kyoung Kun Lee, Soongyu Kwon, Jong Tae Kim

Abstract:

An embedded system for SEU(single event upset) test needs to be designed to prevent system failure by high-energy particles during measuring SEU. SEU is a phenomenon in which the data is changed temporary in semiconductor device caused by high-energy particles. In this paper, we present an embedded system for SRAM(static random access memory) SEU test. SRAMs are on the DUT(device under test) and it is separated from control board which manages the DUT and measures the occurrence of SEU. It needs to have considerations for preventing system failure while managing the DUT and making an accurate measurement of SEUs. We measure the occurrence of SEUs from five different SRAMs at three different cyclotron beam energies 30, 35, and 40MeV. The number of SEUs of SRAMs ranges from 3.75 to 261.00 in average.

Keywords: embedded system, single event upset, SRAM

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125 Simulation Study of Lateral Trench Gate Power MOSFET on 4H-SiC

Authors: Yashvir Singh, Mayank Joshi

Abstract:

A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.

Keywords: 4H-SiC, lateral, trench-gate, power MOSFET.

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124 Influence of Internal Heat Source on Thermal Instability in a Horizontal Porous Layer with Mass Flow and Inclined Temperature Gradient

Authors: Anjanna Matta, P. A. L. Narayana

Abstract:

An investigation has been presented to analyze the effect of internal heat source on the onset of Hadley-Prats flow in a horizontal fluid saturated porous medium. We examine a better understanding of the combined influence of the heat source and mass flow effect by using linear stability analysis. The resultant eigenvalue problem is solved by using shooting and Runga-Kutta methods for evaluate critical thermal Rayleigh number with respect to various flow governing parameters. It is identified that the flow is switch from stabilizing to destabilizing as the horizontal thermal Rayleigh number is enhanced. The heat source and mass flow increases resulting a stronger destabilizing effect.

Keywords: Linear stability analysis, heat source, porous medium, mass flow.

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123 Learning Programming for Hearing Impaired Students via an Avatar

Authors: Nihal Esam Abuzinadah, Areej Abbas Malibari, Arwa Abdulaziz Allinjawi, Paul Krause

Abstract:

Deaf and hearing-impaired students face many obstacles throughout their education, especially with learning applied sciences such as computer programming. In addition, there is no clear signs in the Arabic Sign Language that can be used to identify programming logic terminologies such as while, for, case, switch etc. However, hearing disabilities should not be a barrier for studying purpose nowadays, especially with the rapid growth in educational technology. In this paper, we develop an Avatar based system to teach computer programming to deaf and hearing-impaired students using Arabic Signed language with new signs vocabulary that is been developed for computer programming education. The system is tested on a number of high school students and results showed the importance of visualization in increasing the comprehension or understanding of concepts for deaf students through the avatar.

Keywords: Hearing-impaired students, isolation, self-esteem, learning difficulties.

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122 Evaluating the Tool Wear Rate in Ultrasonic Machining of Titanium using Design of Experiments Approach

Authors: Jatinder Kumar, Vinod Kumar

Abstract:

Ultrasonic machining (USM) is a non-traditional machining process being widely used for commercial machining of brittle and fragile materials such as glass, ceramics and semiconductor materials. However, USM could be a viable alternative for machining a tough material such as titanium; and this aspect needs to be explored through experimental research. This investigation is focused on exploring the use of ultrasonic machining for commercial machining of pure titanium (ASTM Grade-I) and evaluation of tool wear rate (TWR) under controlled experimental conditions. The optimal settings of parameters are determined through experiments planned, conducted and analyzed using Taguchi method. In all, the paper focuses on parametric optimization of ultrasonic machining of pure titanium metal with TWR as response, and validation of the optimized value of TWR by conducting confirmatory experiments.

Keywords: Ultrasonic machining, titanium, tool wear rate

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121 Multifunctional Electrical Outlet based on Mobile Ad Hoc Network

Authors: Toshihiko Sasama, Takao Kawamura, Kazunori Sugahara

Abstract:

Nowadays, new home appliances and office appliances have been developed that communicate with users through the Internet, for remote monitor and remote control. However, developments and sales of these new appliances are just started, then, many products in our houses and offices do not have these useful functions. In few years, we add these new functions to the outlet, it means multifunctional electrical power socket plug adapter. The outlet measure power consumption of connecting appliances, and it can switch power supply to connecting appliances, too. Using this outlet, power supply of old appliances can be control and monitor. And we developed the interface system using web browser to operate it from users[1]. But, this system need to set up LAN cables between outlets and so on. It is not convenience that cables around rooms. In this paper, we develop the system that use wireless mobile ad hoc network instead of wired LAN to communicate with the outlets.

Keywords: outlet, remote monitor, mobile ad hoc network, zigbee.

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