Search results for: Mach Zehnder Bias Voltage

Authors: Ghazi Al Sukkar, Yazid Khattabi, Shifen Zhong

Abstract:

Most of the recent wireless LANs, broadband access networks, and digital broadcasting use Orthogonal Frequency Division Multiplexing techniques. In addition, the increasing demand of Data and Internet makes fiber optics an important technology, as fiber optics has many characteristics that make it the best solution for transferring huge frames of Data from a point to another. Radio over fiber is the place where high quality RF is converted to optical signals over single mode fiber. Optimum values for the bias level and the switching voltage for Mach-Zehnder modulator are important for the performance of radio over fiber links. In this paper, we propose a method to optimize the two parameters simultaneously; the bias and the switching voltage point of the external modulator of a radio over fiber system considering RF gain. Simulation results show the optimum gain value under these two parameters.

Keywords: OFDM, Mach Zehnder Bias Voltage, switching voltage, radio-over-fiber, RF gain.

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Authors: H. Kaatuzian, M. Sedghi, S. Khatami

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In this paper, by exploiting a single semiconductor optical amplifier-Mach Zehnder Interferometer (SOA-MZI), an integratable all-optical flip-flop (AOFF) is proposed. It is composed of a SOA-MZI with a bidirectional coupler at the output. Output signals of both bar and crossbar of the SOA-MZI is fed back to SOAs located in the arms of the Mach-Zehnder Interferometer (MZI). The injected photon-rates to the SOAs are modulated by feedback signals in order to form optical flip-flop. According to numerical analysis, Gaussian optical pulses with the energy of 15.2 fJ and 20 ps duration with the full width at half-maximum criterion, can switch the states of the SR-AOFF. Also simulation results show that the SR-AOFF has the contrast ratio of 8.5 dB between two states with the transition time of nearly 20 ps.

Keywords: All Optical, Flip-Flop, Mach-Zehnder Interferometer (MZI), Semiconductor Optical Amplifier (SOA).

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Authors: B. Zare-Farsani, M. Valieghbal, M. Tarkashvand, A. H. Farahbod

Abstract:

To provide the conditions for nuclear fusion by high energy and powerful laser beams, it is required to have a high degree of symmetry and surface uniformity of the spherical capsules to reduce the Rayleigh-Taylor hydrodynamic instabilities. In this paper, we have used the digital microscopic holography based on Mach-Zehnder interferometer to study the quality of targets for inertial fusion. The interferometric pattern of the target has been registered by a CCD camera and analyzed by Holovision software. The uniformity of the surface and shell thickness are investigated and measured in reconstructed image. We measured shell thickness in different zone where obtained non uniformity 22.82 percent.  

Keywords: Inertial confinement fusion, Mach-Zehnder interferometer, Digital holographic microscopy.

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Authors: Naji Ali Albakay, Abdulrahman Alothaim, Isa Barshushi

Abstract:

The most common quadrature amplitude modulator (QAM) applies two Mach-Zehnder Modulators (MZM) and one phase shifter to generate high order modulation format. The bias of MZM changes over time due to temperature, vibration, and aging factors. The change in the biasing causes distortion to the generated QAM signal which leads to deterioration of bit error rate (BER) performance. Therefore, it is critical to be able to lock MZM’s Q point to the required operating point for good performance. We propose a technique for automatic bias control (ABC) of QAM transmitter using BER measurements and gradient descent optimization algorithm. The proposed technique is attractive because it uses the pertinent metric, BER, which compensates for bias drifting independently from other system variations such as laser source output power. The proposed scheme performance and its operating principles are simulated using OptiSystem simulation software for 4-QAM and 16-QAM transmitters.

Keywords: Automatic bias control, optical fiber communication, optical modulation, optical devices.

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Authors: M. Mohamed, X. Zhang, K. Wu, M. Elfituri, A. Legnain

Abstract:

Performance of millimeter-wave (mm-wave) multiband orthogonal frequency division multiplexing (MB-OFDM) ultrawideband (UWB) signal generation using frequency quadrupling technique and transmission over fiber is experimentally investigated. The frequency quadrupling is achived by using only one Mach- Zehnder modulator (MZM) that is biased at maximum transmission (MATB) point. At the output, a frequency quadrupling signal is obtained then sent to a second MZM. This MZM is used for MBOFDM UWB signal modulation. In this work, we demonstrate 30- GHz mm-wave wireless that carries three-bands OFDM UWB signals, and error vector magnitude (EVM) is used to analyze the transmission quality. It is found that our proposed technique leads to an improvement of 3.5 dB in EVM at 40% of local oscillator (LO) modulation with comparison to the technique using two cascaded MZMs biased at minimum transmission (MITB) point.

Keywords: Optical communication, Frequency up-conversion, Mach-Zehnder modulator, millimeter wave generation, radio over fiber

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Authors: Divya Haridas, C. B. Sobhan

Abstract:

Laser interferometric methods have been utilized for the measurement of natural convection heat transfer from a heated vertical flat plate, in the investigation presented here. The study mainly aims at comparing two different fringe orientations in the wedge fringe setting of Mach-Zehnder interferometer (MZI), used for the measurements. The interference fringes are set in horizontal and vertical orientations with respect to the heated surface, and two different fringe analysis methods, namely the stepping method and the method proposed by Naylor and Duarte, are used to obtain the heat transfer coefficients. The experimental system is benchmarked with theoretical results, thus validating its reliability in heat transfer measurements. The interference fringe patterns are analyzed digitally using MATLAB 7 and MOTIC Plus softwares, which ensure improved efficiency in fringe analysis, hence reducing the errors associated with conventional fringe tracing. The work also discuss the relative merits and limitations of the two methods used.

Keywords: MZI, Natural Convection, Naylor Method, Vertical Flat Plate.

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Authors: Vít Lédl, Tomáš Vít, Pavel Psota, Roman Doleček

Abstract:

The presented paper shows the possibility of using holographic interferometry for measurement of temperature field in moving fluids. There are a few methods for identification of velocity fields in fluids, such us LDA, PIV, hot wire anemometry. It is very difficult to measure the temperature field in moving fluids. One of the often used methods is Constant Current Anemometry (CCA), which is a point temperature measurement method. Data are possibly acquired at frequencies up to 1000Hz. This frequency should be limiting factor for using of CCA in fluid when fast change of temperature occurs. This shortcoming of CCA measurements should be overcome by using of optical methods such as holographic interferometry. It is necessary to employ a special holographic setup with double sensitivity instead of the commonly used Mach-Zehnder type of holographic interferometer in order to attain the parameters sufficient for the studied case. This setup is not light efficient like the Mach-Zehnder type but has double sensitivity. The special technique of acquiring and phase averaging of results from holographic interferometry is also presented. The results from the holographic interferometry experiments will be compared with the temperature field achieved by methods CCA method.

Keywords: Holographic interferometry, pulsatile flow, temperature measurement, hot-wire anemometry

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Authors: X. L. Zhou, S. Tunmee, I. Toda, K. Komatsu, S. Ohshio, H. Saitoh

Abstract:

Hydrogenated amorphous carbon (a-C:H) films have been synthesized by a radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) technique with different bias voltage from 0.0 to -0.5 kV. The Raman spectra displayed the polymer-like hydrogenated amorphous carbon (PLCH) film with 0.0 to -0.1 and a-C:H films with -0.2 to -0.5 kV of bias voltages. The surface chemical information of all films were studied by X-ray photoelectron spectroscopy (XPS) technique, presented to C-C (sp2 and sp3) and C-O bonds, and relative carbon (C) and oxygen (O) atomics contents. The O contamination had affected on structure and optical properties. The true density of PLCH and a-C:H films were characterized by X-ray refractivity (XRR) method, showed the result as in the range of 1.16-1.73 g/cm3 that depending on an increasing of bias voltage. The hardness was proportional to the true density of films. In addition, the optical properties i.e. refractive index (n) and extinction coefficient (k) of these films were determined by a spectroscopic ellipsometry (SE) method that give formation to in 1.62-2.10 (n) and 0.04-0.15 (k) respectively. These results indicated that the optical properties confirmed the Raman results as presenting the structure changed with applied bias voltage increased.

Keywords: Negative bias voltage, a-C:H film, Oxygen contamination, Optical properties.

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Authors: Mansour I. Abbadi, Abdel-Rahman M. Jaradat

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In this paper, a technique is proposed to implement an artificial voltage-controlled capacitance or inductance which can replace the well-known varactor diode in many applications. The technique is based on injecting the current of a voltage-controlled current source onto a fixed capacitor or inductor. Then, by controlling the transconductance of the current source by an external bias voltage, a voltage-controlled capacitive or inductive reactance is obtained. The proposed voltage-controlled reactance devices can be designed to work anywhere in the frequency spectrum. Practical circuits for the proposed voltage-controlled reactances are suggested and simulated.

Keywords: voltage-controlled capacitance, voltage-controlled inductance, varactor diode, variable transconductance.

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Authors: Prateek Kishore, T. M. Muruganandam

Abstract:

Supersonic wind tunnel nozzles are generally capable of producing a constant Mach number flow in the test section of the wind tunnel. As a result, most of the supersonic vehicles are widely designed using steady state flow characteristics which may have errors while facing unsteady situations. This study aims to explore the possibility of varying the Mach number of the flow during wind tunnel operation. The nozzle walls are restricted to be inflexible for cooling near the throat due to high stagnation temperature requirement of the flow to simulate the conditions as experienced by the vehicle. Two simple independent mechanisms, rotation and translation of nozzle walls have been analyzed and the nozzle ranges have been optimized to vary the Mach number from Mach 2 to Mach 5 using minimum number of nozzles in the wind tunnel.

Keywords: Method of characteristics, Nozzle, supersonic wind tunnel, variable Mach number.

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Authors: S. Khosroabadi, M. R. Salehi

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In this paper, all-optical signal processors that perform both microwave mixing and bandpass filtering in a radio-over-fiber (RoF) link are presented. The key device is a Mach-Zehnder modulator (MZM) which performs all-optical microwave mixing. An up-converted microwave signal is obtained and other unwanted frequency components are suppressed at the end of the fiber span.

Keywords: Microwave mixing, bandpass filtering, all-optical, signal processing, MZM.

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Authors: Wei Yi Lim, M. Annamalai Arasu, M. Kumarasamy Raja, Minkyu Je

Abstract:

In this paper, the design of wide-swing constant transconductance (g_m) bias circuit that generates bias voltage for low-noise amplifier (LNA) circuit design by using an off-chip resistor is demonstrated. The overall transconductance (G_m) generated by the constant g_m bias circuit is important to maintain the overall gain and noise figure of the LNA circuit. Therefore, investigation is performed to study the variation in G_m with process, temperature and supply voltage (PVT).  Temperature and supply voltage are swept from -10 °C to 85 °C and 1.425 V to 1.575 V respectively, while the process conditions are also varied to the extreme and the g_m variation is eventually concluded at between -3 % to 7 %. With the slight variation in the g_m value, through simulation, at worst condition of state SS, we are able to attain a conversion gain (S₂₁) variation of -3.10 % and a noise figure (NF) variation of 18.71 %. The whole constant g_m circuit draws approximately 100 µA from a 1.5V supply and is designed based on 0.13 µm CMOS process. 

Keywords: Transconductance, LNA, temperature, process.

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Authors: Guiheng Zhang, Wei Zhang, Jun Fu, Yudong Wang

Abstract:

A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Volterra Series is applied to analyze nonlinearity sources of SiGe HBT device model clearly. Meanwhile, the influence of operating current to IMD3 is discussed. Then a β-helper current mirror bias circuit is applied to improve linearity, since the β-helper current mirror bias circuit can offer stable base biasing voltage. Meanwhile, it can also work as predistortion circuit when biasing voltages of three bias circuits are fine-tuned, by this way, the power gain and operating current of PA are optimized for best linearity. The three power stages which fabricated by 0.18 μm SiGe technology are bonded to the printed circuit board (PCB) to obtain impedances by Load-Pull system, then matching networks are done for best linearity with discrete passive components on PCB. The final measured three-stage PA exhibits 21.1 dBm of output power at 1 dB compression point (OP1dB) with power added efficiency (PAE) of 20.6% and 33 dB power gain under 3.3 V power supply voltage.

Keywords: High gain power amplifier, linearization bias circuit, SiGe HBT model, Volterra Series.

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Authors: S. Boorboor, S. A. H. Feghhi, H. Jafari

Abstract:

The ionizing radiations cause different kinds of damages in electronic components. MOSFETs, most common transistors in today’s digital and analog circuits, are severely sensitive to TID damage. In this work, the threshold voltage shift of CD4007 device, which is an integrated circuit including P-channel and N-channel MOS transistors, was investigated for low dose gamma irradiation under different gate bias voltages. We used linear extrapolation method to extract threshold voltage from I_D-V_G characteristic curve. The results showed that the threshold voltage shift was approximately 27.5 mV/Gy for N-channel and 3.5 mV/Gy for P-channel transistors at the gate bias of |9 V| after irradiation by Co-60 gamma ray source. Although the sensitivity of the devices under test were strongly dependent to biasing condition and transistor type, the threshold voltage shifted linearly versus accumulated dose in all cases. The overall results show that the application of CD4007 as an electronic buffer in a radiation therapy system is limited by TID damage. However, this integrated circuit can be used as a cheap and sensitive radiation dosimeter for accumulated dose measurement in radiation therapy systems.

Keywords: Threshold voltage shift, MOS transistor, linear extrapolation, gamma irradiation.

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Authors: Neeraj K. Chasta

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This paper presents an idea for analog current comparison which compares input signal and reference currents with high speed and accuracy. Proposed circuit utilizes amplification properties of common gate configuration, where voltage variations of input current are amplified and a compared output voltage is developed. Cascaded inverter stages are used to generate final CMOS compatible output voltage. Power consumption of circuit can be controlled by the applied gate bias voltage. The comparator is designed and studied at 180nm CMOS process technology for a supply voltage of 3V.

Keywords: Current Mode, Comparator, High Resolution, High Speed.

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Authors: Rasha A. Abdullah, Mohammed. A. Razooqi, Adwan N. H. Al-Ajili

Abstract:

A SnO2/CdS/CdTe heterojunction was fabricated by thermal evaporation technique. The fabricated cells were annealed at 573K for periods of 60, 120 and 180 minutes. The structural properties of the solar cells have been studied by using X-ray diffraction. Capacitance- voltage measurements were studied for the as-prepared and annealed cells at a frequency of 102 Hz. The capacitance- voltage measurements indicated that these cells are abrupt. The capacitance decreases with increasing annealing time. The zero bias depletion region width and the carrier concentration increased with increasing annealing time. The carrier transport mechanism for the CdS/CdTe heterojunction in dark is tunneling recombination. The ideality factor is 1.56 and the reverse bias saturation current is 9.6×10-10A. The energy band lineup for the n- CdS/p-CdTe heterojunction was investigated using current - voltage and capacitance - voltage characteristics.

Keywords: SnO2/CdS/CdTe heterojunction, XRD, C-V measurement, I-V measurement, energy band diagram.

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Authors: Taher Fodeibou, Ziaul Huque, Jenny Galvis

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A parametric study of a mixed-compression supersonic inlet is performed and reported. The effects of inlet Mach Numbers, varying from 4 to 10, and angle of attack, varying from 0 to 10, are reported for a constant inlet dynamic pressure. The paper looked at the variations of mass flow rates through the inlet, gain in entropy through the inlet, and the angles of the external oblique shocks. The mass flow rates were found to decrease monotonically with Mach numbers and increase with angle of attacks. On the other hand the entropy gain through the inlet increased with increasing Mach number and angle of attack. The variation in static pressure was found to be identical from the inlet throat to the exit for Mach number values higher than 6.

Keywords: Angle of attack, entropy gain, mass flow rates, supersonic inlets.

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Authors: Guojia Ma, Guoqiang Lin, Shuili Gong, Gang Sun, Dawang Wang

Abstract:

A diamond-like carbon (DLC) based solid-lubricant film was designed and DLC films were successfully prepared using a microwave plasma enhanced magnetron sputtering deposition technology. Post-test characterizations including Raman spectrometry, X-ray diffraction, nano-indentation test, adhesion test, friction coefficient test were performed to study the influence of substrate bias voltage on the mechanical properties of the W- and S-doped DLC films. The results indicated that the W- and S-doped DLC films also had the typical structure of DLC films and a better mechanical performance achieved by the application of a substrate bias of -200V.

Keywords: Adhesive Strength, Coefficient of Friction, Substrate Bias, W- and S-doped DLC film

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Authors: Néjib Hassen, Thouraya Ettaghzouti, Kamel Besbes

Abstract:

In this paper, a modified CCCII is presented. We have used a current mirror with low supply voltage. This circuit is operated at low supply voltage of ±1V. Tspice simulations for TSMC 0.18μm CMOS Technology has shown that the current and voltage bandwidth are respectively 3.34GHz and 4.37GHz, and parasitic resistance at port X has a value of 169.320 for a control current of 120μA. In order to realize this circuit, we have implemented in this first step a universal current mode filter where the frequency can reach the 134.58MHz. In the second step, we have implemented two simulated inductors: one floating and the other grounded. These two inductors are operated in high frequency and variable depending on bias current I0. Finally, we have used the two last inductors respectively to implement two sinusoidal oscillators domains of frequencies respectively: [470MHz, 692MHz], and [358MHz, 572MHz] for bias currents I0 [80μA, 350μA].

Keywords: Current controlled current conveyor CCCII, floating inductor, grounded inductor, oscillator, universal filter.

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Authors: N.R.N. Idris

Abstract:

This study uses simulated meta-analysis to assess the effects of publication bias on meta-analysis estimates and to evaluate the efficacy of the trim and fill method in adjusting for these biases. The estimated effect sizes and the standard error were evaluated in terms of the statistical bias and the coverage probability. The results demonstrate that if publication bias is not adjusted it could lead to up to 40% bias in the treatment effect estimates. Utilization of the trim and fill method could reduce the bias in the overall estimate by more than half. The method is optimum in presence of moderate underlying bias but has minimal effects in presence of low and severe publication bias. Additionally, the trim and fill method improves the coverage probability by more than half when subjected to the same level of publication bias as those of the unadjusted data. The method however tends to produce false positive results and will incorrectly adjust the data for publication bias up to 45 % of the time. Nonetheless, the bias introduced into the estimates due to this adjustment is minimal

Keywords: Publication bias, Trim and Fill method, percentage relative bias, coverage probability

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Authors: Hnin Hnin Kyi, Khaing Khaing Aye

Abstract:

Acoustic function plays an important role in aerodynamic mechanical engineering. It can classify the kind of air-vehicle such as subsonic or supersonic. Acoustic velocity relates with velocity and Mach number. Mach number relates again acoustic stability or instability condition. Mach number plays an important role in growth or decay in energy system. Acoustic is a function of temperature and temperature is directly proportional to pressure. If we control the pressure, we can control acoustic function. To get pressure stability condition, we apply Navier-Stokes equations.

Keywords: Acoustic velocity, Irrotational, Mach number, Rotational.

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Authors: Young Wook Lee, Sun-Jae Kim, Soo-Yeon Lee, Moon-Kyu Song, Woo-Geun Lee Min-Koo Han

Abstract:

We have fabricated a-IGZO TFT and investigated the stability under positive DC and AC bias stress. The threshold voltage of a-IGZO TFT shifts positively under those biases, and that reduces on-current. For this reason, conventional shift-register circuit employing TFTs which stressed by positive bias will be unstable, may do not work properly. We have designed a new 6-transistor shift-register, which has less transistors than prior circuits. The TFTs of the proposed shift-register are not suffering from positive DC or AC stress, mainly kept unbiased. Despite the compact design, the stable output signal was verified through the SPICE simulation even under RC delay of clock signal.

Keywords: Indium Gallium Zinc Oxide (IGZO), Thin FilmTransistor (TFT), shift-register

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Authors: S. Ganesh, L. Raguraman, E. Anushya, J. krishnasree

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Voltage sags are the most common power quality disturbance in the distribution system. It occurs due to the fault in the electrical network or by the starting of a large induction motor and this can be solved by using the custom power devices such as Dynamic Voltage Restorer (DVR). In this paper DVR is proposed to compensate voltage sags on critical loads dynamically. The DVR consists of VSC, injection transformers, passive filters and energy storage (lead acid battery). By injecting an appropriate voltage, the DVR restores a voltage waveform and ensures constant load voltage. The simulation and experimental results of a DVR using MATLAB software shows clearly the performance of the DVR in mitigating voltage sags.

Keywords: Dynamic voltage restorer, Voltage sags, Power quality, Injection methods.

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Authors: G. Toker, V. Bulatov, T. Kovalchuk, I. Schechter

Abstract:

Dynamics of laser radiation – metal target interaction in water at 1064 nm by applying Mach-Zehnder interference technique was studied. The mechanism of generating the well developed regime of evaporation of a metal surface and a spherical shock wave in water is proposed. Critical intensities of the NIR for the well developed evaporation of silver and gold targets were determined. Dynamics of shock waves was investigated for earlier (dozens) and later (hundreds) nanoseconds of time. Transparent expanding plasma-vapor-compressed water object was visualized and measured. The thickness of compressed layer of water and pressures behind the front of a shock wave for later time delays were obtained from the optical treatment of interferograms.

Keywords: laser, shock wave, metal target, underwater

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Authors: Muhibul Haque Bhuyan, Quazi Deen Mohd Khosru

Abstract:

This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear equations are used to simulate the pocket profiles along the channel at the surface from the source and drain edges towards the center of the n-MOSFET. Then the effective doping concentration is derived and is used in the threshold voltage equation that is obtained by solving the Poisson-s equation in the depletion region at the surface. Simulated threshold voltages for various gate lengths fit well with the experimental data already published in the literature. The simulated result is compared with the two other pocket profiles used to derive the threshold voltage models of n-MOSFETs. The comparison shows that the linear model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices.

Keywords: Linear pocket profile, pocket implantation, nMOSFET, threshold voltage, short channel effect (SCE), reverse short channeleffect (RSCE).

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Authors: S. Varnagiris, M. Urbonavicius, S. Tuckute, M. Lelis, K. Bockute

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Amongst many water purification techniques, TiO₂ photocatalysis is recognized as one of the most promising sustainable methods. It is known that for photocatalytical applications anatase is the most suitable TiO₂ phase, however heterojunction of anatase/rutile phases could improve the photocatalytical activity of TiO₂ even further. Despite the relative simplicity of TiO₂ different synthesis methods lead to the highly dispersed crystal phases and photocatalytic activity of the corresponding samples. Accordingly, suggestions and investigations of various innovative methods of TiO₂ synthesis are still needed. In this work structural and photocatalytical properties of TiO₂ films deposited by the unconventional method of simultaneous co-sputtering from two magnetrons powered by pulsed-Direct Current (pDC) and Radio Frequency (RF) power sources with negative bias voltage have been studied. More specifically, TiO₂ film thickness, microstructure, surface roughness, crystal structure, optical transmittance and photocatalytical properties were investigated by profilometer, scanning electron microscope, atomic force microscope, X-ray diffractometer and UV-Vis spectrophotometer respectively. The proposed unconventional two magnetron co-sputtering based TiO₂ film formation method showed very promising results for crystalline TiO₂ film formation while keeping process temperatures below 100 °C. XRD analysis revealed that by using proper combination of power source type and bias voltage various TiO₂ phases (amorphous, anatase, rutile or their mixture) can be synthesized selectively. Moreover, strong dependency between power source type and surface roughness, as well as between the bias voltage and band gap value of TiO₂ films was observed. Interestingly, TiO₂ films deposited by two magnetron co-sputtering without bias voltage had one of the highest band gap values between the investigated films but its photocatalytic activity was superior compared to all other samples. It is suggested that this is due to the dominating nanocrystalline anatase phase with various exposed surfaces including photocatalytically the most active {001}.

Keywords: Films, magnetron co-sputtering, photocatalysis, TiO2.

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Authors: S. Abdollahi Pour, M. Saneei

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This paper propose a new circuit design which monitor total leakage current during standby mode and generates the optimal reverse body bias voltage, by using the adaptive body bias (ABB) technique to compensate die-to-die parameter variations. Design details of power monitor are examined using simulation framework in 65nm and 32nm BTPM model CMOS process. Experimental results show the overhead of proposed circuit in terms of its power consumption is about 10 μW for 32nm technology and about 12 μW for 65nm technology at the same power supply voltage as the core power supply. Moreover the results show that our proposed circuit design is not far sensitive to the temperature variations and also process variations. Besides, uses the simple blocks which offer good sensitivity, high speed, the continuously feedback loop.

Keywords: leakage current, leakage power monitor, body biasing, low power

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Authors: Mohammed Amroune, Hadi Sebaa, Tarek Bouktir

Abstract:

Reactive power limit of power system is one of the major causes of voltage instability. The only way to save the system from voltage instability is to reduce the reactive power load or add additional reactive power to reaching the point of voltage collapse. In recent times, the application of FACTS devices is a very effective solution to prevent voltage instability due to their fast and very flexible control. In this paper, voltage stability assessment with SVC and TCSC devices is investigated and compared in the modified IEEE 30-bus test system. The fast voltage stability indicator (FVSI) is used to identify weakest bus and to assess the voltage stability of power system.

Keywords: SVC, TCSC, Voltage stability, Fast Voltage Stability Index (FVSI), Reactive power.

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Authors: Bo Bae Song, Byung Seok Lee, Hyun Young Kim, Chung Kwang Lee, Yong Seo Koo

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This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3 and D4).

Keywords: ESD, SCR, Holding voltage, Latch-up.

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Authors: C. Chanapromma, T. Worachak, P. Silapan

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This paper presents positive and negative full-wave rectifier. The proposed structure is based on OTA using commercially available ICs (LT1228). The features of the proposed circuit are that: it can rectify and amplify voltage signal with controllable output magnitude via input bias current: the output voltage is free from temperature variation. The circuit description merely consists of 1 single ended and 3 fully differential OTAs. The performance of the proposed circuit are investigated though PSpice. They show that the proposed circuit can function as positive/negative full-wave rectifier, where the voltage input wide-dynamic range from -5V to 5V. Furthermore, the output voltage is slightly dependent on the temperature variations.

Keywords: Full-wave rectifier, Positive/negative, OTA, Electronically controllable, Wide-dynamic range

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