Search results for: Power semiconductor device

Authors: Srikanta Bose, S.K. Mazumder

Abstract:

In the present simulation work, an attempt is made to study the switching dynamics of an optically controlled 4HSiC thyristor power semiconductor device with the use of GaAs optically triggered power transistor. The half-cell thyristor has the forward breakdown of 200 V and reverse breakdown of more than 1000 V. The optically controlled thyristor has a rise time of 0.14 μs and fall time of 0.065 μs. The turn-on and turn-off delays are 0.1 μs and 0.06 μs, respectively. In addition, this optically controlled thyristor is used as a control switch for the DC-DC Boost converter. The pn-diode used for the converter has the forward drop of 2.8 V and reverse breakdown of around 400 V.

Keywords: 4H-SiC, Boost converter, Optical triggering, Power semiconductor device, thyristor.

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Authors: Yashvir Singh, Swati Chamoli

Abstract:

In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In_0.53Ga_0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.

Keywords: InGaAs, dielectric, lateral, power MOSFET.

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Authors: Yashvir Singh, Mayank Joshi

Abstract:

A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.

Keywords: 4H-SiC, lateral, trench-gate, power MOSFET.

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Authors: S.K. Mazloomi, Nasri b. Sulaiman

Abstract:

By analyzing the sources of energy and power loss in PWM (Pulse Width Modulation) controlled drivers of water electrolysis cells, it is possible to reduce the power dissipation and enhance the efficiency of such hydrogen production units. A PWM controlled power driver is based on a semiconductor switching element where its power dissipation might be a remarkable fraction of the total power demand of an electrolysis system. Power dissipation in a semiconductor switching element is related to many different parameters which could be fitted into two main categories: switching losses and conduction losses. Conduction losses are directly related to the built, structure and capabilities of a switching device itself and indeed the conditions in which the element is handling the switching application such as voltage, current, temperature and of course the fabrication technology. On the other hand, switching losses have some other influencing variables other than the mentioned such as control system, switching method and power electronics circuitry of the PWM power driver. By analyzings the characteristics of recently developed power switching transistors from different families of Bipolar Junction Transistors (BJT), Metal Oxide Semiconductor Field Effect Transistors (MOSFET) and Insulated Gate Bipolar Transistors (IGBT), some recommendations are made in this paper which are able to lead to achieve higher hydrogen production efficiency by utilizing PWM controlled water electrolysis cells.

Keywords: Power switch, PWM, Semiconductor switch, Waterelectrolysis

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Authors: S. Aisyah Azizan, M. Syafiq Azmi, Yuki Harada, Yoshinobu Maeda, Takaomi Matsutani

Abstract:

We introduced an all-optical multicasting characteristics with wavelength conversion based on a novel all-optical triode using negative feedback semiconductor optical amplifier. This study was demonstrated with a transfer speed of 10 Gb/s to a non-return zero 231-1 pseudorandom bit sequence system. This multi-wavelength converter device can simultaneously provide three channels of output signal with the support of non-inverted and inverted conversion. We studied that an all-optical multicasting and wavelength conversion accomplishing cross gain modulation is effective in a semiconductor optical amplifier which is effective to provide an inverted conversion thus negative feedback. The relationship of received power of back to back signal and output signals with wavelength 1535 nm, 1540 nm, 1545 nm, 1550 nm, and 1555 nm with bit error rate was investigated. It was reported that the output signal wavelengths were successfully converted and modulated with a power penalty of less than 8.7 dB, which the highest is 8.6 dB while the lowest is 4.4 dB. It was proved that all-optical multicasting and wavelength conversion using an optical triode with a negative feedback by three channels at the same time at a speed of 10 Gb/s is a promising device for the new wavelength conversion technology.

Keywords: Cross gain modulation, multicasting, negative feedback optical amplifier, semiconductor optical amplifier.

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Authors: Morteza Fathipour, Seyed Nasrolah Anousheh, Kaveh Ghiafeh Davoudi, Vala Fathipour

Abstract:

A device analysis of the photoconductive semiconductor switch is carried out to investigate distribution of electric field and carrier concentrations as well as the current density distribution. The operation of this device was then investigated as a switch operating in X band. It is shown that despite the presence of symmetry geometry, switch current density of the on-state steady state mode is distributed asymmetrically throughout the device.

Keywords: Band X, Gallium-Arsenide, Mixed mode, PCSS, Photoconductivity.

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Authors: Isao Tomita

Abstract:

The principle of all-silicon Raman lasers for an output wavelength of 1.3 μm is presented, which employs quasi-phase-matched structures and resonators to enhance the output power. 1.3-μm laser beams for GE-PONs in FTTH systems generated from a silicon device are very important because such a silicon device can be monolithically integrated with the silicon planar lightwave circuits (Si PLCs) used in the GE-PONs. This reduces the device fabrication processes and time and also optical losses at the junctions between optical waveguides of the Si PLCs and Si laser devices when compared with 1.3-μm III-V semiconductor lasers set on the Si PLCs employed at present. We show that the quasi-phase-matched Si Raman laser with resonators can produce about 174 times larger laser power at 1.3 μm (at maximum) than that without resonators for a Si waveguide of Raman gain 20 cm/GW and optical loss 1.2 dB/cm, pumped at power 10 mW, where the length of the waveguide is 3 mm and its cross-section is (1.5 μm)2.

Keywords: All-silicon raman laser, FTTH, GE-PON, quasi-phase-matched structure, resonator.

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Authors: Yong Seo Koo, Dong Su Kim, Byung Seok Lee, Won Suk Park, Bo Bea Song

Abstract:

This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V.

Keywords: ESD (Electro-Static Discharge), ESD protection device, SCR (Silicon Controlled Rectifier), Latch-up

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Authors: Aïssa Manallah, Mohamed Bouafia

Abstract:

Ellipsometry is an optical method based on the study of the behavior of polarized light. The light reflected on a surface induces a change in the polarization state which depends on the characteristics of the material (complex refractive index and thickness of the different layers constituting the device). The purpose of this work is to determine the optical properties of semiconductor thin films by ellipsometry. This paper describes the experimental aspects concerning the semiconductor samples, the SE400 ellipsometer principle, and the results obtained by direct measurements of ellipsometric parameters and modelling using appropriate software.

Keywords: Ellipsometry, optical constants, semiconductors, thin films.

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Authors: Sangeeta Singh, Pankaj Kumar, P. N. Kondekar

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In this paper, the transient device performance analysis of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been evaluated. 3-D Bohm Quantum Potential (BQP) transport device simulation has been used to evaluate the delay and power dissipation performance. GI-JLT has a number of desirable device parameters such as reduced propagation delay, dynamic power dissipation, power and delay product, intrinsic gate delay and energy delay product as compared to Gate-all-around transistors GAA-JLT. In addition to this, various other device performance parameters namely, on/off current ratio, short channel effects (SCE), transconductance Generation Factor (TGF) and unity gain cut-off frequency (fT ) and subthreshold slope (SS) of the GI-JLT and GAA-JLT have been analyzed and compared. GI-JLT shows better device performance characteristics than GAA-JLT for low power and high frequency applications, because of its larger gate electrostatic control on the device operation.

Keywords: Gate-inside junctionless transistor GI-JLT, Gate-all-around junctionless transistor GAA-JLT, propagation delay, power delay product.

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Authors: Isao Tomita

Abstract:

We develop a periodically-poled LiNbO3 (PPLN) device for highly-efficient third-harmonic generation (THG), where the THG efficiency is enhanced with a cavity. THG can usually be produced via χ(3)-nonlinear materials by optical pumping with very high pump-power. Instead, we here propose THG by moderate-power pumping through a specially-designed PPLN device containing only χ(2)-nonlinearity, where sum-frequency generation in the χ(2) process is employed for the mixing of a pump beam and a second-harmonic-generation (SHG) beam produced from the pump beam. The cavity is designed to increase the SHG power with dichroic mirrors attached to both ends of the device that perfectly reflect the SHG beam back to the device and yet let the pump and THG beams pass through the mirrors. This brings about a THG-power enhancement because of THG power proportional to the enhanced SHG power. We examine the THG-efficiency dependence on the mirror reflectance and show that very high THG-efficiency is obtained at moderate pump-power when compared with that of a cavity-free PPLN device.

Keywords: Cavity, periodically-poled LiNbO3, sum-frequency generation, third-harmonic generation.

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Authors: Deogratius Musiige, François Anton, Vital Yatskevich, Laulagnet Vincent, Darka Mioc, Nguyen Pierre

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This paper presents a methodology towards the emulation of the electrical power consumption of the RF device during the cellular phone/handset transmission mode using the LTE technology. The emulation methodology takes the physical environmental variables and the logical interface between the baseband and the RF system as inputs to compute the emulated power dissipation of the RF device. The emulated power, in between the measured points corresponding to the discrete values of the logical interface parameters is computed as a polynomial interpolation using polynomial basis functions. The evaluation of polynomial and spline curve fitting models showed a respective divergence (test error) of 8% and 0.02% from the physically measured power consumption. The precisions of the instruments used for the physical measurements have been modeled as intervals. We have been able to model the power consumption of the RF device operating at 5MHz using homotopy between 2 continuous power consumptions of the RF device operating at the bandwidths 3MHz and 10MHz.

Keywords: Radio frequency, high power amplifier, baseband, LTE, power, emulation, homotopy, interval analysis, Tx power, register-transfer level.

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Authors: Sunglim Lee, Susumu Fujii, Koji Okamura

Abstract:

Smart grid is a new approach for electric power grid that uses information and communications technology to control the electric power grid. Smart grid provides real-time control of the electric power grid, controlling the direction of power flow or time of the flow. Control devices are installed on the power lines of the electric power grid to implement smart grid. The number of the control devices should be determined, in relation with the area one control device covers and the cost associated with the control devices. One approach to determine the number of the control devices is to use the data on the surplus power generated by home solar generators. In current implementations, the surplus power is sent all the way to the power plant, which may cause power loss. To reduce the power loss, the surplus power may be sent to a control device and sent to where the power is needed from the control device. Under assumption that the control devices are installed on a lattice of equal size squares, our goal is to figure out the optimal spacing between the control devices, where the power sharing area (the area covered by one control device) is kept small to avoid power loss, and at the same time the power sharing area is big enough to have no surplus power wasted. To achieve this goal, a simulation using landscape ecology method is conducted on a sample area. First an aerial photograph of the land of interest is turned into a mosaic map where each area is colored according to the ratio of the amount of power production to the amount of power consumption in the area. The amount of power consumption is estimated according to the characteristics of the buildings in the area. The power production is calculated by the sum of the area of the roofs shown in the aerial photograph and assuming that solar panels are installed on all the roofs. The mosaic map is colored in three colors, each color representing producer, consumer, and neither. We started with a mosaic map with 100 m grid size, and the grid size is grown until there is no red grid. One control device is installed on each grid, so that the grid is the area which the control device covers. As the result of this simulation we got 350m as the optimal spacing between the control devices that makes effective use of the surplus power for the sample area.

Keywords: Landscape ecology, IT, smart grid, aerial photograph, simulation.

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Authors: Hyun-Young Kim, Chung-Kwang Lee, Han-Hee Cho, Sang-Woon Cho, Yong-Seo Koo

Abstract:

In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application.

Keywords: ESD, SCR, holding voltage, stack, power clamp.

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Authors: Jyothi Digge, B. U. Rindhe, S. K. Narayankhedkar

Abstract:

A compact 1x3 power splitter based on Photonic Crystal Waveguides (PCW) with flexible power splitting ratio is presented in this paper. Multimode interference coupler (MMI) is integrated with PCW. The device size reduction compared with the conventional MMI power splitter is attributed to the large dispersion of the PCW. Band Solve tool is used to calculate the band structure of PCW. Finite Difference Time Domain (FDTD) method is adopted to simulate the relevant structure at 1550nm wavelength. The device is polarization insensitive and allows the control of output (o/p) powers within certain percentage points for both polarizations.

Keywords: Dispersion, MMI Coupler, Photonic Bandgap, Power Splitter.

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Authors: P. Vaculík, P. Kaňovský

Abstract:

The following article presents Technology Centre of Ostrava (TCO) in the Czech Republic describing the structure and main research areas realized by the project ENET - Energy Units for Utilization of non Traditional Energy Sources. More details are presented from the research program dealing with transformation, accumulation and distribution of electric energy. Technology Centre has its own energy mix consisting of alternative sources of fuel sources that use of process gases from the storage part and also the energy from distribution network. The article will be focus on the properties and application possibilities SiC semiconductor devices for power semiconductor converter for photovoltaic systems.

Keywords: SiC, Si, Technology Centre of Ostrava, Photovoltaic Systems, DC/DC Converter, Simulation.

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Authors: P. Vaculik

Abstract:

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber. 

Keywords: SiC, Si, MOSFET, IGBT, SBD, RC snubber.

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Authors: A. Faruk Bakan, İsmail Aksoy, Nihan Altintaş

Abstract:

In this paper, half bridge DC-DC converters with transformer isolation presented in the literature are analyzed for highcurrent and low-voltage applications under the same operation conditions, and compared in terms of losses and efficiency. The conventional and improved half-bridge DC-DC converters are simulated, and current and voltage waveforms are obtained for input voltage Vdc=500V, output current IO=450A, output voltage VO=38V and switching frequency fS=20kHz. IGBTs are used as power semiconductor switches. The power losses of the semiconductor devices are calculated from current and voltage waveforms. From simulation results, it is seen that the capacitor switched half bridge converter has the best efficiency value, and can be preferred at high power and high frequency applications.

Keywords: Isolated half bridge DC-DC converter, high-current low-voltage applications, soft switching, high efficiency.

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Authors: Dil Nawaz Khan, M. H. Sayyad, Muhammad Yaseen, Munawar Ali Munawar, Mukhtar Ali

Abstract:

Effect of temperature and light was investigated on a thin film of organic semiconductor formyl-TIPPCu(II) deposited on a glass substrate with preliminary evaporated gold electrodes. The electrical capacitance and resistance of the fabricated device were evaluated under the effect of temperature and light. The relative capacitance of the fabricated sensor increased by 4.3 times by rising temperature from 27 to 1870C, while under illumination up to 25000 lx, the capacitance of the Au/formyl-TIPPCu(II)/Au photo capacitive sensor increased continuously by 13.2 times as compared to dark conditions.

Keywords: formyl-TIPPCu(II), Organic semiconductor, Photocapacitance, Polarizability.

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Authors: Hari Maghfiroh, Harry Prabowo

Abstract:

WOLED is widely used as lighting for high efficacy and little power consumption. In this research, power factor testing between WOLED and fluorescent lamp to see which one is more efficient in consuming energy. Since both lamps use semiconductor components, so calculation of the power factor need to consider the effects of harmonics. Harmonic make bigger losses. The study is conducted by comparing the value of the power factor regardless of harmonics (DPF) and also by included the harmonics (TPF). The average value of DPF of fluorescent is 0.953 while WOLED is 0.972. The average value of TPF of fluorescent is 0.717 whereas WOLED is 0.933. So from the review of power factor WOLED is more energy efficient than fluorescent lamp.

Keywords: Fluorescent, harmonic, power factor, WOLED.

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Authors: Ashot Navasardian, Mariam Vardanian, Vladik Vardanian

Abstract:

The photovoltaic and the semiconductor industries are in growth and it is necessary to supply a large amount of silicon to maintain this growth. Since silicon is still the best material for the manufacturing of solar cells and semiconductor components so the pure silicon like solar grade and semiconductor grade materials are demanded. There are two main routes for silicon production: metallurgical and chemical. In this article, we reviewed the electrotecnological installations and systems for semiconductor manufacturing. The main task is to design the installation which can produce SOG Silicon from river sand by one work unit.

Keywords: Metallurgical grade silicon, solar grade silicon, impurity, refining, plasma.

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Authors: S. Nazhan, Hassan K. Al-Musawi, Khalid A. Humood

Abstract:

This paper reports on an experimental investigation into the influence of current modulation on the properties of a vertical-cavity surface-emitting laser (VCSEL) with a direct square wave modulation. The optical output power response, as a function of the pumping current, modulation frequency, and amplitude, is measured for an 850 nm VCSEL. We demonstrate that modulation frequency and amplitude play important roles in reducing the VCSEL’s power consumption for optical generation. Indeed, even when the biasing current is below the static threshold, the VCSEL emits optical power under the square wave modulation. The power consumed by the device to generate light is significantly reduced to > 50%, which is below the threshold current, in response to both the modulation frequency and amplitude. An operating VCSEL device at low power is very desirable for less thermal effects, which are essential for a high-speed modulation bandwidth.

Keywords: VCSELs, optical power generation, power consumption, square wave modulation.

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Authors: Liheng Ying, Guangjiong Sun

Abstract:

The intent of this essay is to evaluate the effectiveness of surge suppressor aimed at power supply used for automation devices in power distribution system which is consist of MOV and T type low-pass filter. Books, journal articles and e-sources related to surge protection of power supply used for automation devices in power distribution system were consulted, and the useful information was organized, analyzed and developed into five parts: characteristics of surge wave, protection against surge wave, impedance characteristics of target, using Matlab to simulate circuit response after 5kV,1.2/50s surge wave and suggestions for surge protection. The results indicate that various types of load situation have great impact on the effectiveness of surge protective device. Therefore, type and parameters of surge protective device need to be carefully selected, and load matching is also vital to be concerned.

Keywords: automation devices in power distribution system, MOV, surge, T type low-pass filter.

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Authors: Hani Baek, Gwang Min Sun, Chansun Shin, Sung Ho Ahn

Abstract:

Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO₂ interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.

Keywords: NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center.

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Authors: Hyung-Nam Kim, Won-Yong Chae, Dong-Sul Shin, Ho-Sung Kim, Hee-Je Kim

Abstract:

A wireless power transfer system can attribute to the fields in robot, aviation and space in which lightening the weight of device and improving the movement play an important role. A wireless power transfer system was investigated to overcome the inconvenience of using power cable. Especially a wireless power transfer technology is important element for mobile robots. We proposed the wireless power transfer system of the half-bridge resonant converter with the frequency tracking and optimized power transfer control unit. And the possibility of the application and development system was verified through the experiment with LED loads.

Keywords: Wireless Power Transmission (WPT), resonancefrequency, protection circuit. LED.

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Authors: Bahr Eldin S. M, K. S. Rama Rao, N. Perumal

Abstract:

A generalized unified power quality conditioner (GUPQC) by using three single-phase three-level voltage source converters (VSCs) connected back-to-back through a common dc link is proposed in this paper as a new custom power device for a three-feeder distribution system. One of the converters is connected in shunt with one feeder for mitigation of current harmonics and reactive power compensation, while the other two VSCs are connected in series with the other two feeders to maintain the load voltage sinusoidal and at constant level. A new control scheme based on synchronous reference frame is proposed for series converters. The simulation analysis on compensation performance of GUPQC based on PSCAD/EMTDC is reported.

Keywords: Custom power device, generalized unified power quality conditioner, PSCAD/ETMDC, voltage source converter

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Authors: Tosaphol Ratniyomchai, Uthai Jaithong, Thanatchai Kulworawanichpong

Abstract:

This paper presents an application of power line carrier (PLC) for electrical power telemetering. This system has a special capability of transmitting the measured values to a centralized computer via power lines. The PLC modem as a passive high-pass filter is designed for transmitting and receiving information. Its function is to send the information carrier together with transmitted data by superimposing it on the 50 Hz power frequency signal. A microcontroller is employed to function as the main processing of the modem. It is programmed for PLC control and interfacing with other devices. Each power meter, connected via a PLC modem, is assigned with a unique identification number (address) for distinguishing each device from one another.

Keywords: Power telemetering, Power line carrier, High-passfilter, Digital data transmission

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Authors: Chul H. Jo, Do Y. Kim, Bong K. Cho, Myeong J. Kim

Abstract:

The exhaustion of oil and the environmental pollution from the use of fossil fuel are increasing. Tidal current power (TCP) has been proposed as an alternative energy source because of its predictability and reliability. By applying a duct and single point mooring (SPM) system, a TCP device can amplify the generating power and keep its position properly. Because the generating power is proportional to cube of the current stream velocity, amplifying the current speed by applying a duct to a TCP system is an effective way to improve the efficiency of the power device. An SPM system can be applied at any water depth and is highly cost effective. Simple installation and maintenance procedures are also merits of an SPM system. In this study, we designed an SPM system for a duct-type TCP device for use in shallow water. Motions of the duct are investigated to obtain the response amplitude operator (RAO) as the magnitude of the transfer function. Parameters affecting the stability of the SPM system such as the fairlead departure angle, current velocity, and the number of clamp weights are analyzed and/or optimized. Wadam and OrcaFlex commercial software is used to design the mooring line.

Keywords: Mooring design, parametric analysis, response amplitude operator, single point mooring.

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Authors: R. M. López-Gutiérrez, L. Cardoza-Avendaño, H. Cervantes-De Ávila, J. A. Michel-Macarty, C. Cruz-Hernández, A. Arellano-Delgado, R. Carmona-Rodríguez

Abstract:

In this paper, synchronization of multiple chaotic semiconductor lasers is achieved by appealing to complex system theory. In particular, we consider dynamical networks composed by semiconductor laser, as interconnected nodes, where the interaction in the networks are defined by coupling the first state of each node. An interest case is synchronized with master-slave configuration in star topology. Nodes of these networks are modeled for the laser and simulate by Matlab. These results are applicable to private communication.

Keywords: Synchronization, chaotic laser, network.

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Authors: S. Meikandasivam, Rajesh Kumar Nema, Shailendra Kumar Jain

Abstract:

A basic conceptual study of TCSC device on Simulink is a teaching aid and helps in understanding the rudiments of the topic. This paper thus stems out from basics of TCSC device and analyzes the impedance characteristics and associated single & multi resonance conditions. The Impedance characteristics curve is drawn for different values of inductance in MATLAB using M-files. The study is also helpful in estimating the appropriate inductance and capacitance values which have influence on multi resonance point in TCSC device. The capacitor voltage, line current, thyristor current and capacitor current waveforms are discussed briefly as simulation results. Simulink model of TCSC device is given and corresponding waveforms are analyzed. The subsidiary topics e.g. power oscillation damping, SSR mitigation and transient stability is also brought out.

Keywords: TCSC device, Impedance characteristics, Resonance point, Simulink model

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